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WO2003038881A1 - Collage direct d'articles contenant du silicium - Google Patents

Collage direct d'articles contenant du silicium Download PDF

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Publication number
WO2003038881A1
WO2003038881A1 PCT/US2002/033208 US0233208W WO03038881A1 WO 2003038881 A1 WO2003038881 A1 WO 2003038881A1 US 0233208 W US0233208 W US 0233208W WO 03038881 A1 WO03038881 A1 WO 03038881A1
Authority
WO
WIPO (PCT)
Prior art keywords
opposing surfaces
bonding
contacting
solution
contact
Prior art date
Application number
PCT/US2002/033208
Other languages
English (en)
Inventor
Robert Sabia
Original Assignee
Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/035,564 external-priority patent/US6814833B2/en
Application filed by Corning Incorporated filed Critical Corning Incorporated
Publication of WO2003038881A1 publication Critical patent/WO2003038881A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/02—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/341—Silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining

Definitions

  • This invention relates to direct bonding. More particularly, the invention
  • Bonding without the assistance of polymeric adhesives is a technology of interest for
  • Optical wringing refers to a process of bonding glass surfaces in which
  • adsorbed surface groups are removed from active bonds on a surface by heating the parts to
  • fiber coatings and fiber array systems that utilize polymeric adhesives to bond the
  • Vacuum bonding involves bringing two clean surfaces into contact in a high
  • Fusion bonding refers to the process of cleaning two surfaces (glass or metal),
  • a welded interface One example of a fusion bonding process is fusion splicing of optical
  • temperature materials such as adhesives and polymer coatings (e.g., fiber coatings).
  • Adhesive bonding is a common process for mounting of fibers in ferules and
  • UV curable UV curable, and allow for alignment of components between application of the adhesive and
  • bonded part is exposed to thermal cycling. Another issue is signal loss from transmission through the adhesive when the adhesive is used in the optical path of optical systems.
  • Actuators, V. 83, pp. 136-141, 2000 discloses low-temperature bonding of fused SiO 2 by first
  • the invention relates to methods of bonding opposing surfaces of silicon-
  • the invention may further find
  • the method includes providing
  • the opposing surfaces can be maintained at a temperature below about 300° C, preferably
  • the step of providing is a step of providing
  • high pH means a solution having a pH of about 8
  • Suitable high pH solutions include hydroxide-based solutions such as potassium
  • the method may further include cleaning the opposing surfaces with a detergent
  • surfaces may also be ground and polished prior to contacting the surfaces. According to this embodiment, it may be desirable to provide a bonding surface having a flatness less than 1
  • the pH of the high pH solution is
  • Suitable acids for this step may include
  • the opposing surfaces are rinsed with water and placed in contact without drying
  • the method of the present invention is suitable for bonding a wide variety of
  • silica-containing, glass and oxide-based surfaces For example, the method could be used to
  • photonic components lenses, ferrules, optical fiber waveguides, and combinations of these
  • the invention may be utilized to bond two or more optical fibers
  • waveguide fiber preforms together to provide for an enlarged fiber preform and continuous
  • the invention may also be utilized to bond at least two glass tubes
  • the bonding method may be used to
  • the invention provides a simple, low temperature, and inexpensive bonding
  • Bonding can occur at temperatures lower than
  • FIG. 1 is a diagram of termination groups on the surface of a silica-containing
  • FIG. 2a is a diagram of adsorbed water molecules and hydroxyl groups on
  • FIG. 2b is a diagram of termination groups on the surfaces shown in FIG. 2a after
  • FIG. 2c is a diagram of termination groups on the surfaces shown in FIGS. 2a and
  • FIG. 3 is flow chart of process steps according to one embodiment of the
  • the present invention relates to methods for bonding silicon containing
  • a surface treatment of a high pH base solution such as potassium hydroxide, sodium hydroxide or ammonium hydroxide is
  • the surfaces are first cleaned using a detergent followed by rinsing with an acid
  • the surfaces are contacted with a high pH solution, rinsed,
  • this temperature can be as
  • polymer typically 150-200° C, usually a maximum of around 250° C, but preferably less than 150° C.
  • a low temperature frit is used to seal and/or adhere components
  • the temperature used for direct bonding may need to
  • sealing must be performed at a low enough temperature (typically less than 100° C)
  • the surfaces are flat, as determined by performing
  • fringes can be acquired according to teclmiques known in the art and interpreted to determine
  • an optical flat or interferometer can be used to evaluate individual
  • interference fringes between two mating surfaces prior to bonding can be used.
  • the bonding process of the present invention consists of machining
  • each surface to be sealed to an appropriate flatness is sealed to an appropriate flatness.
  • Particularly preferred flatness levels are
  • each surface is polished
  • Such surface groups include ⁇ Si-OH, and more
  • the surfaces are assembled without drying. However, in some embodiments it may be acceptable to moderately dry the bonding surfaces
  • vacuum e.g., about 10 "3 millibar to assist in sealing the bonding surfaces without an air gap.
  • a low to moderate load (at least one PSI) is then applied as the surfaces are heated to less
  • silicic acid-like surface groups condense to form a covalently-bonded interface.
  • pH solution e.g. pH greater than about 8, or a pH greater than about 9 causes the surface to
  • silicate species such as, for example, SiO 2 (OH) 2 2" , SiO(OH) 3 " , etc.
  • borosilicate glasses may require additional heating to provide sufficient bond strength for
  • termination groups allow bonding (both hydrogen and covalent) to occur between surface
  • each surface can be
  • acid-like termination groups for silica surfaces is expected to improve bonding performance
  • the bonding surface of an article can be any suitable material. According to the present invention, the bonding surface of an article can be any suitable material.
  • the samples are then cleaned using a detergent, soaked in a strong acid such as
  • nitric acid to remove adsorbed hydrocarbons and dissolved rare-earth contaminants (e.g.,
  • cerium oxide from the polishing step cerium oxide from the polishing step
  • a high pH alkali solution cerium oxide from the polishing step
  • the bond interface is denoted by a lack of interference fringes. If fringes are
  • constituents of the component or package being bonded e.g., presence of low-temperature
  • softening or degrading materials such as adhesives and coatings away from the bond
  • solution pH may create
  • the ammonium hydroxide soak used to hydrate the glass surface has a pH between
  • ammonium hydroxide is a weak base
  • concentration of KOH is typically used to clean laboratory glassware. This solution is
  • a pH such as 12-
  • solubility reaction proceeds at a much slower rate than for a pH 14 solution.
  • the nitric acid solution has a pH near 0, and will preferentially etch
  • ammonium hydroxide solution for 60 minutes. The samples were rinsed again, and the
  • the bars were bonded together in the shape of a cross ("+"), and an Instron-type,
  • the measured force was an indication of the bond strength. If the
  • PolarcorTM is a borosilicate glass. A proprietary polarization process makes the outer
  • Polarcor bars were bonded together at a bonding temperature of about 200° C.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

L'invention concerne des procédés permettant de coller des articles en verre contenant du silicium sans utiliser d'adhésifs ou de fusion à température élevée. Une grande variété d'articles en verre contenant du silicium peuvent être collés à l'aide des procédés de l'invention.
PCT/US2002/033208 2001-10-26 2002-10-17 Collage direct d'articles contenant du silicium WO2003038881A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/035,564 2001-10-26
US10/035,564 US6814833B2 (en) 2001-10-26 2001-10-26 Direct bonding of articles containing silicon
US10/255,926 2002-09-25
US10/255,926 US6949164B2 (en) 2001-10-26 2002-09-25 Direct bonding of articles containing silicon

Publications (1)

Publication Number Publication Date
WO2003038881A1 true WO2003038881A1 (fr) 2003-05-08

Family

ID=26712243

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/033208 WO2003038881A1 (fr) 2001-10-26 2002-10-17 Collage direct d'articles contenant du silicium

Country Status (1)

Country Link
WO (1) WO2003038881A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006111185A1 (fr) * 2005-04-16 2006-10-26 Carl Zeiss Smt Ag Procede permettant de connecter deux elements d'un composant optique
US7678458B2 (en) 2007-01-24 2010-03-16 Asml Holding N.V. Bonding silicon silicon carbide to glass ceramics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5183710A (en) * 1990-08-30 1993-02-02 U-Sus Distributors, Inc. Hydrophobic inorganic materials and process for making same
US5451547A (en) * 1991-08-26 1995-09-19 Nippondenso Co., Ltd. Method of manufacturing semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5183710A (en) * 1990-08-30 1993-02-02 U-Sus Distributors, Inc. Hydrophobic inorganic materials and process for making same
US5451547A (en) * 1991-08-26 1995-09-19 Nippondenso Co., Ltd. Method of manufacturing semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006111185A1 (fr) * 2005-04-16 2006-10-26 Carl Zeiss Smt Ag Procede permettant de connecter deux elements d'un composant optique
US7678458B2 (en) 2007-01-24 2010-03-16 Asml Holding N.V. Bonding silicon silicon carbide to glass ceramics
US8168017B2 (en) 2007-01-24 2012-05-01 Asml Holding N.V. Bonding silicon silicon carbide to glass ceramics

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