WO2003038881A1 - Collage direct d'articles contenant du silicium - Google Patents
Collage direct d'articles contenant du silicium Download PDFInfo
- Publication number
- WO2003038881A1 WO2003038881A1 PCT/US2002/033208 US0233208W WO03038881A1 WO 2003038881 A1 WO2003038881 A1 WO 2003038881A1 US 0233208 W US0233208 W US 0233208W WO 03038881 A1 WO03038881 A1 WO 03038881A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- opposing surfaces
- bonding
- contacting
- solution
- contact
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 12
- 239000010703 silicon Substances 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 239000003599 detergent Substances 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 239000003929 acidic solution Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 37
- 239000000853 adhesive Substances 0.000 abstract description 19
- 230000001070 adhesive effect Effects 0.000 abstract description 19
- 230000004927 fusion Effects 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 239000000463 material Substances 0.000 description 21
- 239000000835 fiber Substances 0.000 description 17
- 239000000377 silicon dioxide Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 8
- 238000011282 treatment Methods 0.000 description 7
- 229910008051 Si-OH Inorganic materials 0.000 description 6
- 229910006358 Si—OH Inorganic materials 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 235000011118 potassium hydroxide Nutrition 0.000 description 4
- 235000011121 sodium hydroxide Nutrition 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006283 Si—O—H Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000012681 fiber drawing Methods 0.000 description 1
- 238000007526 fusion splicing Methods 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
- B32B2315/02—Ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/341—Silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
Definitions
- This invention relates to direct bonding. More particularly, the invention
- Bonding without the assistance of polymeric adhesives is a technology of interest for
- Optical wringing refers to a process of bonding glass surfaces in which
- adsorbed surface groups are removed from active bonds on a surface by heating the parts to
- fiber coatings and fiber array systems that utilize polymeric adhesives to bond the
- Vacuum bonding involves bringing two clean surfaces into contact in a high
- Fusion bonding refers to the process of cleaning two surfaces (glass or metal),
- a welded interface One example of a fusion bonding process is fusion splicing of optical
- temperature materials such as adhesives and polymer coatings (e.g., fiber coatings).
- Adhesive bonding is a common process for mounting of fibers in ferules and
- UV curable UV curable, and allow for alignment of components between application of the adhesive and
- bonded part is exposed to thermal cycling. Another issue is signal loss from transmission through the adhesive when the adhesive is used in the optical path of optical systems.
- Actuators, V. 83, pp. 136-141, 2000 discloses low-temperature bonding of fused SiO 2 by first
- the invention relates to methods of bonding opposing surfaces of silicon-
- the invention may further find
- the method includes providing
- the opposing surfaces can be maintained at a temperature below about 300° C, preferably
- the step of providing is a step of providing
- high pH means a solution having a pH of about 8
- Suitable high pH solutions include hydroxide-based solutions such as potassium
- the method may further include cleaning the opposing surfaces with a detergent
- surfaces may also be ground and polished prior to contacting the surfaces. According to this embodiment, it may be desirable to provide a bonding surface having a flatness less than 1
- the pH of the high pH solution is
- Suitable acids for this step may include
- the opposing surfaces are rinsed with water and placed in contact without drying
- the method of the present invention is suitable for bonding a wide variety of
- silica-containing, glass and oxide-based surfaces For example, the method could be used to
- photonic components lenses, ferrules, optical fiber waveguides, and combinations of these
- the invention may be utilized to bond two or more optical fibers
- waveguide fiber preforms together to provide for an enlarged fiber preform and continuous
- the invention may also be utilized to bond at least two glass tubes
- the bonding method may be used to
- the invention provides a simple, low temperature, and inexpensive bonding
- Bonding can occur at temperatures lower than
- FIG. 1 is a diagram of termination groups on the surface of a silica-containing
- FIG. 2a is a diagram of adsorbed water molecules and hydroxyl groups on
- FIG. 2b is a diagram of termination groups on the surfaces shown in FIG. 2a after
- FIG. 2c is a diagram of termination groups on the surfaces shown in FIGS. 2a and
- FIG. 3 is flow chart of process steps according to one embodiment of the
- the present invention relates to methods for bonding silicon containing
- a surface treatment of a high pH base solution such as potassium hydroxide, sodium hydroxide or ammonium hydroxide is
- the surfaces are first cleaned using a detergent followed by rinsing with an acid
- the surfaces are contacted with a high pH solution, rinsed,
- this temperature can be as
- polymer typically 150-200° C, usually a maximum of around 250° C, but preferably less than 150° C.
- a low temperature frit is used to seal and/or adhere components
- the temperature used for direct bonding may need to
- sealing must be performed at a low enough temperature (typically less than 100° C)
- the surfaces are flat, as determined by performing
- fringes can be acquired according to teclmiques known in the art and interpreted to determine
- an optical flat or interferometer can be used to evaluate individual
- interference fringes between two mating surfaces prior to bonding can be used.
- the bonding process of the present invention consists of machining
- each surface to be sealed to an appropriate flatness is sealed to an appropriate flatness.
- Particularly preferred flatness levels are
- each surface is polished
- Such surface groups include ⁇ Si-OH, and more
- the surfaces are assembled without drying. However, in some embodiments it may be acceptable to moderately dry the bonding surfaces
- vacuum e.g., about 10 "3 millibar to assist in sealing the bonding surfaces without an air gap.
- a low to moderate load (at least one PSI) is then applied as the surfaces are heated to less
- silicic acid-like surface groups condense to form a covalently-bonded interface.
- pH solution e.g. pH greater than about 8, or a pH greater than about 9 causes the surface to
- silicate species such as, for example, SiO 2 (OH) 2 2" , SiO(OH) 3 " , etc.
- borosilicate glasses may require additional heating to provide sufficient bond strength for
- termination groups allow bonding (both hydrogen and covalent) to occur between surface
- each surface can be
- acid-like termination groups for silica surfaces is expected to improve bonding performance
- the bonding surface of an article can be any suitable material. According to the present invention, the bonding surface of an article can be any suitable material.
- the samples are then cleaned using a detergent, soaked in a strong acid such as
- nitric acid to remove adsorbed hydrocarbons and dissolved rare-earth contaminants (e.g.,
- cerium oxide from the polishing step cerium oxide from the polishing step
- a high pH alkali solution cerium oxide from the polishing step
- the bond interface is denoted by a lack of interference fringes. If fringes are
- constituents of the component or package being bonded e.g., presence of low-temperature
- softening or degrading materials such as adhesives and coatings away from the bond
- solution pH may create
- the ammonium hydroxide soak used to hydrate the glass surface has a pH between
- ammonium hydroxide is a weak base
- concentration of KOH is typically used to clean laboratory glassware. This solution is
- a pH such as 12-
- solubility reaction proceeds at a much slower rate than for a pH 14 solution.
- the nitric acid solution has a pH near 0, and will preferentially etch
- ammonium hydroxide solution for 60 minutes. The samples were rinsed again, and the
- the bars were bonded together in the shape of a cross ("+"), and an Instron-type,
- the measured force was an indication of the bond strength. If the
- PolarcorTM is a borosilicate glass. A proprietary polarization process makes the outer
- Polarcor bars were bonded together at a bonding temperature of about 200° C.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
L'invention concerne des procédés permettant de coller des articles en verre contenant du silicium sans utiliser d'adhésifs ou de fusion à température élevée. Une grande variété d'articles en verre contenant du silicium peuvent être collés à l'aide des procédés de l'invention.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/035,564 | 2001-10-26 | ||
US10/035,564 US6814833B2 (en) | 2001-10-26 | 2001-10-26 | Direct bonding of articles containing silicon |
US10/255,926 | 2002-09-25 | ||
US10/255,926 US6949164B2 (en) | 2001-10-26 | 2002-09-25 | Direct bonding of articles containing silicon |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003038881A1 true WO2003038881A1 (fr) | 2003-05-08 |
Family
ID=26712243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/033208 WO2003038881A1 (fr) | 2001-10-26 | 2002-10-17 | Collage direct d'articles contenant du silicium |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2003038881A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006111185A1 (fr) * | 2005-04-16 | 2006-10-26 | Carl Zeiss Smt Ag | Procede permettant de connecter deux elements d'un composant optique |
US7678458B2 (en) | 2007-01-24 | 2010-03-16 | Asml Holding N.V. | Bonding silicon silicon carbide to glass ceramics |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5183710A (en) * | 1990-08-30 | 1993-02-02 | U-Sus Distributors, Inc. | Hydrophobic inorganic materials and process for making same |
US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
-
2002
- 2002-10-17 WO PCT/US2002/033208 patent/WO2003038881A1/fr not_active Application Discontinuation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5183710A (en) * | 1990-08-30 | 1993-02-02 | U-Sus Distributors, Inc. | Hydrophobic inorganic materials and process for making same |
US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006111185A1 (fr) * | 2005-04-16 | 2006-10-26 | Carl Zeiss Smt Ag | Procede permettant de connecter deux elements d'un composant optique |
US7678458B2 (en) | 2007-01-24 | 2010-03-16 | Asml Holding N.V. | Bonding silicon silicon carbide to glass ceramics |
US8168017B2 (en) | 2007-01-24 | 2012-05-01 | Asml Holding N.V. | Bonding silicon silicon carbide to glass ceramics |
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