+

WO2003036734A2 - Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method - Google Patents

Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method Download PDF

Info

Publication number
WO2003036734A2
WO2003036734A2 PCT/JP2002/010609 JP0210609W WO03036734A2 WO 2003036734 A2 WO2003036734 A2 WO 2003036734A2 JP 0210609 W JP0210609 W JP 0210609W WO 03036734 A2 WO03036734 A2 WO 03036734A2
Authority
WO
WIPO (PCT)
Prior art keywords
magnetoresistance effect
effect element
magnetic memory
memory device
magetic
Prior art date
Application number
PCT/JP2002/010609
Other languages
English (en)
French (fr)
Other versions
WO2003036734A1 (en
WO2003036734A3 (fr
Inventor
Kazuhiro Ohba
Kazuhiko Hayashi
Hiroshi Kano
Kazuhiro Bessho
Tetsuya Mizuguchi
Yutaka Higo
Masanori Hosomi
Tetsuya Yamamoto
Hiroaki Narisawa
Takeyuki Sone
Keitaro Endo
Shinya Kubo
Original Assignee
Sony Corp
Kazuhiro Ohba
Kazuhiko Hayashi
Hiroshi Kano
Kazuhiro Bessho
Tetsuya Mizuguchi
Yutaka Higo
Masanori Hosomi
Tetsuya Yamamoto
Hiroaki Narisawa
Takeyuki Sone
Keitaro Endo
Shinya Kubo
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp, Kazuhiro Ohba, Kazuhiko Hayashi, Hiroshi Kano, Kazuhiro Bessho, Tetsuya Mizuguchi, Yutaka Higo, Masanori Hosomi, Tetsuya Yamamoto, Hiroaki Narisawa, Takeyuki Sone, Keitaro Endo, Shinya Kubo filed Critical Sony Corp
Priority to US10/492,147 priority Critical patent/US7262064B2/en
Priority to JP2003539113A priority patent/JP4428051B2/ja
Priority to KR1020047005268A priority patent/KR100954970B1/ko
Priority to EP02802009.7A priority patent/EP1580821B1/en
Publication of WO2003036734A1 publication Critical patent/WO2003036734A1/ja
Publication of WO2003036734A2 publication Critical patent/WO2003036734A2/ja
Publication of WO2003036734A3 publication Critical patent/WO2003036734A3/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3204—Exchange coupling of amorphous multilayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5002—Characteristic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)
PCT/JP2002/010609 2001-10-12 2002-10-11 Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method WO2003036734A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/492,147 US7262064B2 (en) 2001-10-12 2002-10-11 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
JP2003539113A JP4428051B2 (ja) 2001-10-12 2002-10-11 磁気抵抗効果素子、磁気メモリ素子、磁気メモリ装置
KR1020047005268A KR100954970B1 (ko) 2001-10-12 2002-10-11 자기 저항 효과 소자, 자기 메모리 소자, 자기 메모리 장치 및 이들의 제조 방법
EP02802009.7A EP1580821B1 (en) 2001-10-12 2002-10-11 Magnetoresistance effect element, magnetic memory element, magnetic memory device, and their manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-315857 2001-10-12
JP2001315857 2001-10-12

Publications (3)

Publication Number Publication Date
WO2003036734A1 WO2003036734A1 (en) 2003-05-01
WO2003036734A2 true WO2003036734A2 (en) 2003-05-01
WO2003036734A3 WO2003036734A3 (fr) 2005-08-04

Family

ID=19133968

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/010609 WO2003036734A2 (en) 2001-10-12 2002-10-11 Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method

Country Status (5)

Country Link
US (1) US7262064B2 (ja)
EP (1) EP1580821B1 (ja)
JP (2) JP4428051B2 (ja)
KR (1) KR100954970B1 (ja)
WO (1) WO2003036734A2 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203702A (ja) * 2004-01-19 2005-07-28 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
JP2005539376A (ja) * 2002-08-30 2005-12-22 フリースケール セミコンダクター インコーポレイテッド 磁気デバイス用アモルファス合金
EP1542236A3 (en) * 2003-11-24 2006-08-02 Samsung Electronics Co., Ltd. Apparatus and method of analyzing magnetic random access memory
JP2006295000A (ja) * 2005-04-13 2006-10-26 Sony Corp 記憶素子及びメモリ
WO2011065323A1 (ja) * 2009-11-27 2011-06-03 日本電気株式会社 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
KR20180085338A (ko) * 2017-01-18 2018-07-26 삼성전자주식회사 자기 접합의 제조 방법 및 자기 메모리

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683760B2 (ja) 1991-05-22 1994-10-26 富士車輌株式会社 シャツ折りたたみ機
JP2004214459A (ja) * 2003-01-06 2004-07-29 Sony Corp 不揮発性磁気メモリ装置及びその製造方法
KR100548997B1 (ko) * 2003-08-12 2006-02-02 삼성전자주식회사 다층박막구조의 자유층을 갖는 자기터널 접합 구조체들 및이를 채택하는 자기 램 셀들
US7366009B2 (en) * 2004-01-10 2008-04-29 Honeywell International Inc. Separate write and read access architecture for a magnetic tunnel junction
KR100867662B1 (ko) 2004-03-12 2008-11-10 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 자기저항소자, 터널 장벽층 및 자기저항소자의 제조방법
US7611912B2 (en) * 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
JP4292128B2 (ja) * 2004-09-07 2009-07-08 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
DE602005010662D1 (de) * 2005-03-09 2008-12-11 Korea University Foundation Magnetische Tunnelübergangsanordnung mit amorpher NiFeSiB Freischicht
US7369376B2 (en) * 2005-03-15 2008-05-06 Headway Technologies, Inc. Amorphous layers in a magnetic tunnel junction device
JP2006319259A (ja) * 2005-05-16 2006-11-24 Fujitsu Ltd 強磁性トンネル接合素子、これを用いた磁気ヘッド、磁気記録装置、および磁気メモリ装置
US7230265B2 (en) * 2005-05-16 2007-06-12 International Business Machines Corporation Spin-polarization devices using rare earth-transition metal alloys
JP2007048790A (ja) * 2005-08-05 2007-02-22 Sony Corp 記憶素子及びメモリ
JP2007088415A (ja) * 2005-08-25 2007-04-05 Fujitsu Ltd 磁気抵抗効果素子、磁気ヘッド、磁気記憶装置、および磁気メモリ装置
US7349187B2 (en) * 2005-09-07 2008-03-25 International Business Machines Corporation Tunnel barriers based on alkaline earth oxides
US7777261B2 (en) * 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US7973349B2 (en) * 2005-09-20 2011-07-05 Grandis Inc. Magnetic device having multilayered free ferromagnetic layer
KR100706806B1 (ko) * 2006-01-27 2007-04-12 삼성전자주식회사 자기 메모리 소자 및 그 제조 방법
EP1980890B1 (en) * 2006-01-30 2011-09-28 Nikon Corporation Cata-dioptric imaging system, exposure device, and device manufacturing method
KR100718153B1 (ko) * 2006-02-17 2007-05-14 삼성전자주식회사 마그네틱 도메인 이동을 이용한 자기메모리
KR100754397B1 (ko) * 2006-02-22 2007-08-31 삼성전자주식회사 마그네틱 도메인 이동을 이용한 자기메모리
KR100695171B1 (ko) 2006-02-23 2007-03-14 삼성전자주식회사 마그네틱 도메인 이동을 이용하는 자기 메모리 장치
US7672093B2 (en) * 2006-10-17 2010-03-02 Magic Technologies, Inc. Hafnium doped cap and free layer for MRAM device
JP5003109B2 (ja) * 2006-11-14 2012-08-15 富士通株式会社 強磁性トンネル接合素子、その製造方法、及びそれを用いた磁気ヘッド、磁気メモリ
KR100791007B1 (ko) * 2006-12-07 2008-01-04 삼성전자주식회사 금속 실리사이드 나노 결정을 구비하는 비휘발성 메모리소자, 상기 금속 실리사이드 나노 결정 형성 방법 및 상기비휘발성 메모리 소자의 제조방법
KR100837412B1 (ko) * 2006-12-12 2008-06-12 삼성전자주식회사 멀티 스택 메모리 소자
US7957179B2 (en) * 2007-06-27 2011-06-07 Grandis Inc. Magnetic shielding in magnetic multilayer structures
US8014109B2 (en) * 2007-10-04 2011-09-06 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon
US8372661B2 (en) * 2007-10-31 2013-02-12 Magic Technologies, Inc. High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
US20090168269A1 (en) * 2007-12-28 2009-07-02 Matthew Joseph Carey Current perpendicular to plane spin valve with high-polarization material in ap1 layer for reduced spin torque
JP2009164182A (ja) * 2007-12-28 2009-07-23 Hitachi Global Storage Technologies Netherlands Bv 磁気抵抗効果素子、磁気ヘッド及び磁気記録再生装置
US8810973B2 (en) 2008-05-13 2014-08-19 HGST Netherlands B.V. Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
US7817463B2 (en) * 2008-06-30 2010-10-19 Qualcomm Incorporated System and method to fabricate magnetic random access memory
US7894248B2 (en) * 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
US8138561B2 (en) * 2008-09-18 2012-03-20 Magic Technologies, Inc. Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM
JP2010251620A (ja) * 2009-04-17 2010-11-04 Sony Corp 電子機器
US20110236723A1 (en) * 2010-03-26 2011-09-29 Tsann Lin CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR WITH Co-Fe BUFFER LAYERS
US8686484B2 (en) 2011-06-10 2014-04-01 Everspin Technologies, Inc. Spin-torque magnetoresistive memory element and method of fabricating same
JP2013016530A (ja) * 2011-06-30 2013-01-24 Sony Corp 記憶素子およびその製造方法ならびに記憶装置
US8503135B2 (en) 2011-09-21 2013-08-06 Seagate Technology Llc Magnetic sensor with enhanced magnetoresistance ratio
JP5777588B2 (ja) 2012-09-21 2015-09-09 株式会社東芝 磁気抵抗効果素子
EP2953178B1 (en) * 2013-02-04 2017-11-22 Alps Electric Co., Ltd. Giant magnetoresistive element and current sensor using same
JP6199730B2 (ja) 2013-12-25 2017-09-20 株式会社東芝 電流センサ及び電流センサモジュール
KR101710269B1 (ko) 2015-06-23 2017-02-27 한양대학교 산학협력단 수직자기이방성을 갖는 mtj 구조 및 이를 포함하는 자성소자
EP3933948B1 (en) 2015-12-10 2025-02-05 Everspin Technologies, Inc. Magnetoresistive stack, seed region therefor and method of manufacturing same
US10483320B2 (en) 2015-12-10 2019-11-19 Everspin Technologies, Inc. Magnetoresistive stack with seed region and method of manufacturing the same
US10361361B2 (en) * 2016-04-08 2019-07-23 International Business Machines Corporation Thin reference layer for STT MRAM
EP3718152B1 (en) * 2017-11-29 2021-11-10 Everspin Technologies, Inc. Magnetoresistive stack
CN113328035B (zh) * 2020-02-28 2024-04-23 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US12135226B2 (en) * 2020-05-26 2024-11-05 Analog Devices International Unlimited Company Magnetoresistive element with free-layer and method of manufacturing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236946A (en) 1978-03-13 1980-12-02 International Business Machines Corporation Amorphous magnetic thin films with highly stable easy axis
EP0791915A2 (en) 1996-02-22 1997-08-27 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
JP2001068760A (ja) 1999-08-31 2001-03-16 Hitachi Ltd 強磁性トンネル接合素子
JP2001144345A (ja) 1999-11-12 2001-05-25 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気メモリ
EP1182713A2 (en) 2000-08-21 2002-02-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US643652A (en) * 1898-11-05 1900-02-20 George A Hill Corset-stay-tipping machine.
JPH11353868A (ja) * 1998-06-09 1999-12-24 Canon Inc 磁性薄膜メモリ素子およびその製造方法および製造装置
JP3235572B2 (ja) * 1998-09-18 2001-12-04 日本電気株式会社 磁気抵抗効果素子，磁気抵抗効果センサ及びそれらを利用したシステム
EP1124272A1 (en) * 1999-05-28 2001-08-16 Matsushita Electric Industrial Co., Ltd. Magnetoresistant device, method for manufacturing the same, and magnetic component
JP3589346B2 (ja) 1999-06-17 2004-11-17 松下電器産業株式会社 磁気抵抗効果素子および磁気抵抗効果記憶素子
JP2001274480A (ja) * 2000-03-27 2001-10-05 Sharp Corp 磁気メモリの製造方法
JP3607609B2 (ja) 2000-12-28 2005-01-05 株式会社東芝 磁気抵抗効果素子、磁気メモリ、磁気ヘッド、及び磁気再生装置
JP2003124541A (ja) * 2001-10-12 2003-04-25 Nec Corp 交換結合膜、磁気抵抗効果素子、磁気ヘッド及び磁気ランダムアクセスメモリ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236946A (en) 1978-03-13 1980-12-02 International Business Machines Corporation Amorphous magnetic thin films with highly stable easy axis
EP0791915A2 (en) 1996-02-22 1997-08-27 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
JP2001068760A (ja) 1999-08-31 2001-03-16 Hitachi Ltd 強磁性トンネル接合素子
JP2001144345A (ja) 1999-11-12 2001-05-25 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気メモリ
EP1182713A2 (en) 2000-08-21 2002-02-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1580821A4

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005539376A (ja) * 2002-08-30 2005-12-22 フリースケール セミコンダクター インコーポレイテッド 磁気デバイス用アモルファス合金
EP1542236A3 (en) * 2003-11-24 2006-08-02 Samsung Electronics Co., Ltd. Apparatus and method of analyzing magnetic random access memory
US7165197B2 (en) 2003-11-24 2007-01-16 Samsung Electronics Co., Ltd. Apparatus and method of analyzing a magnetic random access memory
CN1622221B (zh) * 2003-11-24 2011-06-15 三星电子株式会社 分析磁性随机存取存储器的设备与方法
JP2005203702A (ja) * 2004-01-19 2005-07-28 Sony Corp 磁気抵抗効果素子及び磁気メモリ装置
JP2006295000A (ja) * 2005-04-13 2006-10-26 Sony Corp 記憶素子及びメモリ
WO2011065323A1 (ja) * 2009-11-27 2011-06-03 日本電気株式会社 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
US8908423B2 (en) 2009-11-27 2014-12-09 Nec Corporation Magnetoresistive effect element, and magnetic random access memory
KR20180085338A (ko) * 2017-01-18 2018-07-26 삼성전자주식회사 자기 접합의 제조 방법 및 자기 메모리

Also Published As

Publication number Publication date
EP1580821B1 (en) 2015-12-09
KR20040044547A (ko) 2004-05-28
JP2009283963A (ja) 2009-12-03
JPWO2003036734A1 (ja) 2005-03-10
EP1580821A4 (en) 2007-02-28
JP4428051B2 (ja) 2010-03-10
US7262064B2 (en) 2007-08-28
KR100954970B1 (ko) 2010-04-29
EP1580821A2 (en) 2005-09-28
WO2003036734A3 (fr) 2005-08-04
JP5218314B2 (ja) 2013-06-26
US20040257719A1 (en) 2004-12-23

Similar Documents

Publication Publication Date Title
WO2003036734A1 (en) Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
WO2003036734A3 (fr) Element a effet de magnetoresistance, element de memoire magnetique, dispositif de memoire magnetique et procede de fabrication correspondant
EP1061592A3 (en) Magneto-resistance effect element, and its use as memory element
JP6948706B2 (ja) 磁気抵抗効果素子および磁気メモリ
EP1115164A3 (en) Magnetoresistive device and magnetic memory using the same
WO2004029973A3 (en) Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element
WO2005079528A3 (en) Spin transfer magnetic element having low saturation magnetization free layers
JP3085663B2 (ja) メモリー素子に情報を書き込む方法およびメモリー素子から情報を非破壊的に読み出す方法
EP1298669A3 (en) Magnetic memory device
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
WO2008133107A1 (ja) 磁気抵抗素子、ｍｒａｍ、及び磁気センサー
SG153012A1 (en) Magnetic element with thermally-assisted writing
WO2005020242A3 (en) Magnetic memory element utilizing spin transfer switching and storing multiple bits
EP1345277A4 (en) MAGNETORESISTANT DEVICE, MAGNETIC HEAD, AND MAGNETIC DISK DRIVE
WO2003085674A3 (en) Synthetic-ferrimagnet sense-layer for high density mram applications
EP1494295A4 (en) MAGNETIC RESOURCE EFFECT ELEMENT AND MAGNETIC MEMORY COMPONENT
KR20140081710A (ko) 조작된 수직 자기 이방성을 갖는 자기 접합들을 제공하기 위한 방법 및 시스템
KR960011854A (ko) 자기저항효과 박막 및 그 제조방법
WO2009019949A1 (ja) 磁気ランダムアクセスメモリ及びその製造方法
WO2005082061A3 (en) Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
EP1248264A3 (en) Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element
WO2009054180A1 (ja) 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
WO2005112034A3 (en) Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
WO2004064073A3 (en) Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
WO2006023018A3 (en) Magnetic tunnel junction element structures and methods for fabricating the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003539113

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 10492147

Country of ref document: US

Ref document number: 1020047005268

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2002802009

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2002802009

Country of ref document: EP

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载