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WO2003032380A1 - Dispositif et procede de traitement d'un substrat - Google Patents

Dispositif et procede de traitement d'un substrat Download PDF

Info

Publication number
WO2003032380A1
WO2003032380A1 PCT/JP2002/010286 JP0210286W WO03032380A1 WO 2003032380 A1 WO2003032380 A1 WO 2003032380A1 JP 0210286 W JP0210286 W JP 0210286W WO 03032380 A1 WO03032380 A1 WO 03032380A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
plating
heated fluid
rotatingly
temperature
Prior art date
Application number
PCT/JP2002/010286
Other languages
English (en)
French (fr)
Inventor
Shinji Kajita
Ichiro Katakabe
Haruko Ohno
Yuki Inoue
Sachiko Kihara
Original Assignee
Ebara Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corporation filed Critical Ebara Corporation
Publication of WO2003032380A1 publication Critical patent/WO2003032380A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1678—Heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/106—Other heavy metals refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Weting (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
PCT/JP2002/010286 2001-10-03 2002-10-02 Dispositif et procede de traitement d'un substrat WO2003032380A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001/307543 2001-10-03
JP2001307543A JP2003115474A (ja) 2001-10-03 2001-10-03 基板処理装置及び方法

Publications (1)

Publication Number Publication Date
WO2003032380A1 true WO2003032380A1 (fr) 2003-04-17

Family

ID=19126990

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/010286 WO2003032380A1 (fr) 2001-10-03 2002-10-02 Dispositif et procede de traitement d'un substrat

Country Status (4)

Country Link
US (1) US20030092264A1 (ja)
JP (1) JP2003115474A (ja)
TW (1) TW564478B (ja)
WO (1) WO2003032380A1 (ja)

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US7234477B2 (en) 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
JP4261931B2 (ja) * 2002-07-05 2009-05-13 株式会社荏原製作所 無電解めっき装置および無電解めっき後の洗浄方法
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) * 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7240679B2 (en) * 2002-09-30 2007-07-10 Lam Research Corporation System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7997288B2 (en) * 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US7153400B2 (en) * 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7389783B2 (en) * 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7675000B2 (en) * 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US20050048768A1 (en) * 2003-08-26 2005-03-03 Hiroaki Inoue Apparatus and method for forming interconnects
JP2005072446A (ja) * 2003-08-27 2005-03-17 Chi Mei Electronics Corp プラズマ処理装置及び基板の表面処理装置
JP4644676B2 (ja) * 2003-10-06 2011-03-02 アプライド マテリアルズ インコーポレイテッド フェイスアップウェット処理用のウェーハ温度均一性を改善する装置
US8372757B2 (en) * 2003-10-20 2013-02-12 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing
JP4766836B2 (ja) * 2004-03-01 2011-09-07 大日本印刷株式会社 フォトマスク基板の洗浄方法
US8062471B2 (en) * 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US7628864B2 (en) * 2004-04-28 2009-12-08 Tokyo Electron Limited Substrate cleaning apparatus and method
JP2006128458A (ja) * 2004-10-29 2006-05-18 Toshiba Corp 半導体基板洗浄装置及びその方法
US20060266737A1 (en) * 2005-05-27 2006-11-30 Hanestad Ronald J Process for removal of metals and alloys from a substrate
TWI343840B (en) * 2005-07-06 2011-06-21 Applied Materials Inc Apparatus for electroless deposition of metals onto semiconductor substrates
US7849916B2 (en) * 2006-02-02 2010-12-14 Noah Precision, Llc Temperature control apparatus and method
US7928366B2 (en) * 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8813764B2 (en) 2009-05-29 2014-08-26 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
US8146902B2 (en) * 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
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JP5123122B2 (ja) * 2008-09-11 2013-01-16 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
JP5437168B2 (ja) * 2009-08-07 2014-03-12 東京エレクトロン株式会社 基板の液処理装置および液処理方法
JP5599754B2 (ja) * 2010-05-31 2014-10-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、およびこの基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体
JP5490639B2 (ja) * 2010-07-14 2014-05-14 大日本スクリーン製造株式会社 基板処理装置および基板搬送方法
KR101590661B1 (ko) 2010-09-13 2016-02-01 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체
JP5280473B2 (ja) * 2011-03-03 2013-09-04 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
US9147593B2 (en) * 2012-10-10 2015-09-29 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles
US10062586B2 (en) * 2013-07-26 2018-08-28 Tokyo Electron Limited Chemical fluid processing apparatus and chemical fluid processing method
US10057992B2 (en) * 2013-08-15 2018-08-21 Hitachi Metals, Ltd. Ceramic circuit substrate and its production method
JP6195803B2 (ja) * 2014-05-02 2017-09-13 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP6861566B2 (ja) * 2017-04-07 2021-04-21 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7288770B2 (ja) * 2019-03-05 2023-06-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7390837B2 (ja) * 2019-09-27 2023-12-04 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7592570B2 (ja) 2021-09-17 2024-12-02 株式会社東芝 エッチング装置及びエッチング方法

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JPH0774140A (ja) * 1993-09-02 1995-03-17 Toshiba Corp 半導体装置の製造装置
EP1037261A2 (en) * 1999-03-15 2000-09-20 Nec Corporation Etching and cleaning methods and etching and cleaning apparatuses used therefor
JP2001073157A (ja) * 1999-09-08 2001-03-21 Sony Corp 無電解めっき方法及びその装置
JP2001085383A (ja) * 1999-09-13 2001-03-30 Shimada Phys & Chem Ind Co Ltd 基板処理装置
JP2001316834A (ja) * 2000-04-28 2001-11-16 Sony Corp 無電解メッキ装置および導電膜の形成方法

Also Published As

Publication number Publication date
JP2003115474A (ja) 2003-04-18
US20030092264A1 (en) 2003-05-15
TW564478B (en) 2003-12-01

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