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WO2003032368A3 - Fabrication de supraconducteurs haute temperature - Google Patents

Fabrication de supraconducteurs haute temperature Download PDF

Info

Publication number
WO2003032368A3
WO2003032368A3 PCT/US2002/022529 US0222529W WO03032368A3 WO 2003032368 A3 WO2003032368 A3 WO 2003032368A3 US 0222529 W US0222529 W US 0222529W WO 03032368 A3 WO03032368 A3 WO 03032368A3
Authority
WO
WIPO (PCT)
Prior art keywords
biaxially aligned
superconductor
biaxially
substrate
fabrication
Prior art date
Application number
PCT/US2002/022529
Other languages
English (en)
Other versions
WO2003032368A2 (fr
Inventor
Uthamalingam Balachandran
Stephen E Dorris
Beihai Ma
Meiya Li
Original Assignee
Univ Chicago
Uthamalingam Balachandran
Stephen E Dorris
Beihai Ma
Meiya Li
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Chicago, Uthamalingam Balachandran, Stephen E Dorris, Beihai Ma, Meiya Li filed Critical Univ Chicago
Priority to AU2002356506A priority Critical patent/AU2002356506A1/en
Publication of WO2003032368A2 publication Critical patent/WO2003032368A2/fr
Publication of WO2003032368A3 publication Critical patent/WO2003032368A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0381—Processes for depositing or forming copper oxide superconductor layers by evaporation, e.g. MBE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0856—Manufacture or treatment of devices comprising metal borides, e.g. MgB2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

La présente invention concerne un procédé de formation de supraconducteur bi-axialement aligné sur un substrat non bi-axialement aligné et sensiblement inerte chimiquement par rapport au supraconducteur bi-axialement aligné concerné. Un substrat non bi-axialement aligné, chimiquement inerte par rapport au supraconducteur et un matériau supraconducteur bi-axialement aligné est déposé directement sur ce substrat non bi-axialement aligné. Cette invention concerne aussi un procédé de formation de plume de matériau supraconducteur et de mise en contact de cette plume avec le substrat non bi-axialement aligné à un angle supérieur à 00 et inférieur à 900 afin de déposer un supraconducteur bi-axialement aligné sur ce substrat non bi-axialement aligné. Divers supraconducteurs et divers substrats sont présentés en exemple.
PCT/US2002/022529 2001-07-13 2002-07-15 Fabrication de supraconducteurs haute temperature WO2003032368A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002356506A AU2002356506A1 (en) 2001-07-13 2002-07-15 Fabrication of high temperature superconductors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/905,509 2001-07-13
US09/905,509 US6579360B2 (en) 2001-07-13 2001-07-13 Fabrication of high temperature superconductors

Publications (2)

Publication Number Publication Date
WO2003032368A2 WO2003032368A2 (fr) 2003-04-17
WO2003032368A3 true WO2003032368A3 (fr) 2003-11-13

Family

ID=25420957

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/022529 WO2003032368A2 (fr) 2001-07-13 2002-07-15 Fabrication de supraconducteurs haute temperature

Country Status (3)

Country Link
US (1) US6579360B2 (fr)
AU (1) AU2002356506A1 (fr)
WO (1) WO2003032368A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003224739A1 (en) * 2002-03-25 2003-10-13 Penn State Research Foundation Method for producing boride thin films
WO2005010953A2 (fr) * 2003-02-28 2005-02-03 Penn State Research Foundation Films minces de borure sur silicium
US20050048329A1 (en) * 2003-08-26 2005-03-03 The University Of Chicago Layered structure of Cu-containing superconductor and Ag or Ag alloys with Cu
US7012275B2 (en) * 2004-02-17 2006-03-14 The University Of Chicago Method for fabrication of high temperature superconductors
US20060093861A1 (en) * 2004-10-29 2006-05-04 The Penn State Research Foundation Method for producing doped, alloyed, and mixed-phase magnesium boride films
US7828108B2 (en) * 2006-02-01 2010-11-09 Polaris Industries, Inc. Rear drive and suspension for an all terrain vehicle
JP5041734B2 (ja) * 2006-05-24 2012-10-03 株式会社日立製作所 二ホウ化マグネシウム超電導薄膜の作製方法および二ホウ化マグネシウム超電導薄膜
US9012848B2 (en) 2012-10-02 2015-04-21 Coherent, Inc. Laser power and energy sensor utilizing anisotropic thermoelectric material
US9059346B2 (en) 2012-10-02 2015-06-16 Coherent, Inc. Laser power and energy sensor utilizing anisotropic thermoelectric material

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739086A (en) * 1995-04-10 1998-04-14 Lockheed Martin Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US5792270A (en) * 1993-10-21 1998-08-11 Saxena; Arjun Apparatus for forming a pattern of nucleation sites
US6110278A (en) * 1998-08-10 2000-08-29 Saxena; Arjun N. Methods for and products of growth of single-crystal on arrayed nucleation sites (SCANS) defined in nucleation unfriendly substrates
US6114287A (en) * 1998-09-30 2000-09-05 Ut-Battelle, Llc Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
US6296701B1 (en) * 1998-09-30 2001-10-02 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
US6428635B1 (en) * 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5007229A (en) * 1984-05-22 1991-04-16 Highland Supply Corporation Method of wrapping utilizing a self adhering wrapping material
US5611854A (en) 1995-09-21 1997-03-18 The University Of Chicago Seed crystals with improved properties for melt processing superconductors for practical applications
US5869431A (en) 1996-04-15 1999-02-09 The University Of Chicago Thin film seeds for melt processing textured superconductors for practical applications
US6188921B1 (en) 1998-02-10 2001-02-13 American Superconductor Corporation Superconducting composite with high sheath resistivity

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5792270A (en) * 1993-10-21 1998-08-11 Saxena; Arjun Apparatus for forming a pattern of nucleation sites
US6103019A (en) * 1993-10-21 2000-08-15 Saxena; Arjun Advanced technique to grow single crystal films on amorphous and/or non-single crystal surfaces
US5739086A (en) * 1995-04-10 1998-04-14 Lockheed Martin Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US6428635B1 (en) * 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors
US6110278A (en) * 1998-08-10 2000-08-29 Saxena; Arjun N. Methods for and products of growth of single-crystal on arrayed nucleation sites (SCANS) defined in nucleation unfriendly substrates
US6114287A (en) * 1998-09-30 2000-09-05 Ut-Battelle, Llc Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
US6296701B1 (en) * 1998-09-30 2001-10-02 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

Also Published As

Publication number Publication date
US6579360B2 (en) 2003-06-17
US20030013613A1 (en) 2003-01-16
WO2003032368A2 (fr) 2003-04-17
AU2002356506A1 (en) 2003-04-22

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