WO2003031320A1

WO2003031320A1 - Thin film structural member, method of manufacturing the member, and switching element using the member

Info

Publication number: WO2003031320A1
Application number: PCT/JP2002/009680
Authority: WO
Inventors: Nobuyuki Ishiwata; Shinsaku Saito; Hiroaki Honjo; Tamaki Toba; Keishi Ohashi
Original assignee: Nec Corporation
Priority date: 2001-10-02
Filing date: 2002-09-20
Publication date: 2003-04-17
Also published as: TW569354B; JP2003117896A

Abstract

A switching element, comprising electrical contacts (4, 4') disposed on a substrate (1) and a movable part (3a) having electrical contacts (5, 5') disposed thereon, wherein the movable part (3a) is fixed to support parts (3b, 3b') through spring parts (3c, 3c') formed of a thin structural member having one or more flat surfaces and the other one or more flat surfaces continued with the flat surfaces at an angle of, for example, approximately 90°.

Description

Description Thin film structural member, method of manufacturing the same, and switching element using the same Background of the invention

The present invention relates to a thin-film structural member in which occurrence of warpage or the like is suppressed, a method of manufacturing the same, and a switching element using the same. The switching element turns on / off signals of a wide frequency range from DC to gigahertz or more. The present invention relates to a microselect port-to-mechanical system (MEMS) switch applicable to wavelength-convertible semiconductor lasers, optical filters, optical switches, and the like.

There is a MEMS (Micro Electro Mechanical System) switch that is manufactured using the thin film manufacturing process in the miniaturization technology. The MEMS switch includes, for example, a fixed structure and a movable structure, and the movable structure has a support member and a movable member, and the movable member is connected to the support member by a spring member.

The MEMS switch configured as described above includes a switch that performs a switching operation when the movable member is moved by an attractive force or a repulsive force acting between the fixed structure and the movable member, and a switch that performs a switching operation. It has been proposed to be applied to optical switches and the like, which consist of a movable member and a movable member whose surface reflects light. For example, “US Pat. No. 6,044,705, US Pat. No. 5,969,465, US Pat. No. 5,960,132, US Pat. 6,201,629, US Pat. Among these, the prior art will be described using the example of the invention described in “USP 6 201 629” as an example.

FIG. 10a is a plan view of the MEMS switch disclosed in “US Pat. No. 6,020,629”, and FIG. 10b is a cross-sectional view. In FIGS. 10A and 10B, a support 102 is provided on a base 101. A mirror 104 is arranged on the support 102 via a hinge spring 103. When the hinge panel 103 is twisted by receiving an external force, the mirror is tilted, and as a result, switching is performed. The conventional MEM switch was configured as shown above. As shown in FIG. 2, there is a problem that the hinge spring 103 and the mirror 104 are warped. When such warpage occurs, it becomes difficult to control the torsion angle of the hinge panel 103, and a fatal obstacle occurs in which light reflected by the mirror 104 is scattered.

The above-mentioned warpage is caused by using a hinge panel 103 composed of one plane as shown in FIG. 13 and a mirror 104 composed of one plane as shown in FIG. That is. Since it is composed of one plane, it is easily bent by external force.

First, the warpage is caused by the internal stress of the thin film, which is generated when a MEMS device is manufactured using a thin film manufacturing process. In particular, when the internal stress of the thin film is compressive, the movable parts that are formed on the sacrificial layer, here the hinge panel 103 and the mirror 104, expand after the sacrificial layer is removed. The deformation shown in FIGS. 11 and 12 is likely to occur.

Second, the hinge panel 103 and the mirror 104 are extended by thermal expansion due to a rise in the temperature of the element, so that warpage occurs. Third, in particular, when the electromagnetic force is used as the force for operating the movable portion, the above-described warpage occurs. The electromagnetic force is about three times stronger than the electrostatic force, and both the attractive force and the repulsive force can be increased. When an electromagnetic force is used that takes advantage of this strong feature, the hinge panel is not only twisted, but is also easily attracted by the electromagnetic force and easily warps. Summary of the Invention

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to suppress the occurrence of warpage in a movable portion such as a hinge, a spring, and a mirror, and to realize a highly reliable switching operation. And

A thin film structural member according to one embodiment of the present invention is formed of a thin film including one or more surfaces and another one or more surfaces continuous with the surfaces at a predetermined angle. According to this thin-film structural member, there is a surface provided at an angle different from that of one surface in a direction in which one surface warps. The surface is, for example, a flat surface or a curved surface.

In the thin film structural member, for example, the predetermined angle may be approximately 90 °. Ma The thin film structural member functions as a torsion spring. Further, the thin film structural member may be provided with a reflecting surface that reflects light.

In the above-mentioned thin film structural member, the thin film is formed by any one of a vapor phase growth method and a liquid phase growth method, and the vapor phase growth method includes a sputtering method, a vacuum evaporation method, and a chemical vapor deposition method. Any of the growth methods may be used, and the liquid phase growth method may be a plating method.

According to one embodiment of the present invention, there is provided a method of manufacturing a thin film structural member, comprising: forming a sacrificial layer having a concave portion formed of at least one other surface continuous at a predetermined angle with respect to a main surface on a fixed structure. A step of forming a thin film on the surface of the sacrificial layer along the concave portion, and a step of removing the sacrificial layer under the thin film. The method comprises the steps of: This is to form a thin film structural member composed of a thin film having one or more other surfaces continuous at an angle.

A switching element according to one embodiment of the present invention is a switching element including a fixed structure and a movable structure disposed thereon, and includes a support member disposed on the movable structure, and a spring mounted on the support member. A movable member connected by a member, and driving means formed on the fixed structure to apply a predetermined force to the movable member, wherein the spring member has at least one surface and a predetermined angle with the surface. It is a thin film structural member composed of a thin film consisting of at least one other surface and a continuous force.

According to this switching element, the spring member supporting the movable portion has a structure in which one surface is provided at a different angle from the other surface in a direction in which one surface is warped. In the above switching element, the predetermined angle may be approximately 90 °. The driving means is, for example, an electromagnet for applying a magnetic force to the movable part.

A switching element according to another embodiment of the present invention is a switching element including a fixed structure and a movable structure disposed thereon, wherein the support element is disposed on the movable structure, A movable member connected to the movable member by a spring member, and a driving means formed on the fixed structure to apply a predetermined force to the movable member. The movable member has a flat reflecting surface for reflecting light. And a thin-film structural member comprising the reflecting surface and at least one other surface continuous at a predetermined angle. According to this switching element, the movable portion is connected to the reflecting surface in a direction in which the reflecting surface is warped. Has a structure in which surfaces provided at different angles exist.

In the above switching element, the predetermined angle may be approximately 90 °. The driving means is, for example, an electromagnet for applying a magnetic force to the movable part. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1A is a plan view showing a configuration example of the switching element according to the embodiment of the present invention.

FIG. 1B is a sectional view showing a configuration example of the switching element according to the embodiment of the present invention.

2a to 2e are perspective views schematically showing configuration examples of the spring portions 3c, 3c. 3a to 3j are process diagrams showing a process for manufacturing the switching element of FIG. 4a to 4f are process diagrams showing a manufacturing process of the switching element of FIG. 1 subsequent to FIG. 3j.

FIG. 5A is a plan view showing a configuration example of a switching element according to another embodiment of the present invention.

FIG. 5B is a cross-sectional view showing a configuration example of a switching element according to another embodiment of the present invention.

FIG. 6A is a plan view showing a configuration example of a switching element according to another embodiment of the present invention.

FIG. 6B is a cross-sectional view illustrating a configuration example of a switching element according to another embodiment of the present invention.

FIG. 7 is a perspective view schematically showing a configuration example of the movable section 3a.

FIG. 8 is a process diagram showing a manufacturing process of the movable part 3a.

FIG. 9 is a plan view a and a cross-sectional view b showing a configuration example of a switching element according to another embodiment of the present invention.

FIG. 10a is a plan view showing a configuration example of a conventional switching element. FIG. 10b is a cross-sectional view showing a configuration example of a conventional switching element. FIG. 11 is a cross-sectional view for explaining a problem of a conventional switching element. FIG. 12 is a cross-sectional view for explaining a problem of a conventional switch element.

FIG. 13 is a perspective view illustrating the configuration of a hinge panel of a conventional switch element.

FIG. 14 is a perspective view illustrating the configuration of a conventional switch element mirror. Detailed description of the embodiment

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1A is a plan view showing a configuration example of a switching element according to the first embodiment of the present invention, and FIG. 1B is a sectional view. This switching element includes lower magnetic yokes 2a and 2a 'on a substrate la, and further includes thin-film coils 2c and 2c' and upper magnetic yokes 2b and 2b '. As shown in FIG. 1A, the upper magnetic yokes 2b, 2b 'pass through the center of the windings of the thin-film coils 2c, 2c'. The upper magnetic yokes 2b, 2b 'and the lower magnetic yokes 2a, 2a' are magnetically connected.

When a current flows through the thin-film coils 2c and 2c ', the magnetic yoke is magnetized, and N (S) and S (N) magnetic poles are formed, for example, above the upper magnetic yokes 2b and 2b'. The thin-film electromagnet composed of the lower magnetic yokes 2a, 2a, the thin-film coils 2c, 2c 'and the upper magnetic yokes 2b, 2b' forms a protective layer 1b on the substrate 1a. The upper magnetic yokes 2 b and 2 b ′, which are flattened by the magnetic poles and are exposed on the flat surface of the protective layer lb, constitute the base 1.

The switching element shown in FIGS. La and 1b includes a movable portion 3a provided with electrical contacts 4, 4, and electrical contacts 5, 5 'disposed on the base 1, and a movable portion 3a. Are fixed to the support portions 3b, 3b 'via the spring portions 3c, 3c', and these constitute a movable structure. Here, the spring portions 3 c and 3 c ′ are, as shown in FIG. 2 a, one or more planes and another one or more planes continuous with this plane at an angle of about 90 °, for example. And a thin film structural member made of In addition, two adjacent flats The angle of the plane is not limited to 90 °.

By using the spring portions 3c and 3c 'having such a structure, the bending of the spring portion as shown in FIG. 11 is suppressed. The structure of the spring portions 3c and 3c 'is effective not only in the structure shown in Fig. 2a but also in the structures shown in Figs. 2b, 2c, 2d and 2e.

The movable portion 3a is supported by the support portions 3b, 3b 'from both sides of the central portion via the spring portions 3c, 3c', and the fulcrum is set at the contact point with the spring portions 3c, 3c '. And extends to both sides of the fulcrum. Electric contacts 5, 5 'are arranged at the end of the movable portion 3a, and electric contacts 4, 4' facing the electric contacts 5, 5 'of the movable portion are arranged on the base 1. Although the electrical contacts 4, 4, are arranged via the insulating layers 6, 6 ', the insulating layers 6, 6' may be provided as needed.

When the movable portion 3a is made of a magnetic material, an electromagnetic force acts between the end of the movable portion 3a and the upper surfaces of the upper magnetic yokes 2b and 2b ', which are the magnetic poles of the thin-film electromagnet. As the magnetic material of the movable portion 3a, a soft magnetic material can be used. Soft magnetic materials include Ni-Fe alloys, Co-Ni-Fe alloys, Fe microcrystalline alloys such as Fe_Ta_N, Co- amorphous alloys such as Co-Ta-Zr, Soft iron is suitable.

By passing current alternately through the coils 2 c and 2 c ′ of the thin-film electromagnet, magnetic flux is generated in the upper magnetic yokes 2 b and 2 b ′, and the upper magnetic yokes 2 b and 2 b where the magnetic flux is generated The movable part 3a is drawn to the 'side. As a result, the electrical contacts 4, 4 'and the electrical contacts 5, 5, come into contact, and switching is performed.

As the magnetic material of the movable portion 3a, a magnetic material that easily forms residual magnetization can be used. Magnetic materials that easily form remanent magnetization include Co—Cr—Pt alloys, Co—Cr—Ta alloys, Sm—Co alloys, Nd—Fe—B alloys, and Fe A1—Ni—Co alloy, Fe—Cr—Co alloy, Co—Fe—V alloy, Cu—Ni—Fe alloy, etc. are suitable.

When the movable portion 3a is made of a magnetic material that easily forms remanent magnetization, the movable portion 3a is magnetized in the left and right directions in FIGS. La and 1b. For example, the left side has an N pole and the right side has an S pole. You. At this time, the thin-film electromagnet is operated such that the surfaces of the left and right upper magnetic yokes 2b, 2b 'are simultaneously N-pole or S-pole. This allows, for example, When the N pole is used, the attractive force is applied between the thin film electromagnet on the right side and the right side of the movable section 3a shown in Figs. 1a and 1b, and the attractive force is applied between the thin film electromagnet on the left side and the right side of the movable section 3a. The repulsive force acts, and the movable part 3a falls to the right, the right electrical contact turns on, and the left electrical contact turns off. Even if the current to the thin-film coil is cut off in this state, due to the residual magnetization of the movable part 3a, an attractive force is generated between the magnetic pole of the right thin-film electromagnet (upper part of the upper magnetic yoke 2b ') and the right side of the movable part 3a. , The movable part 3a remains tilted to the right, and the electrical contact on the right remains on.

On the other hand, if the surfaces of the left and right upper magnetic yokes 2 b and 2 b 'are simultaneously S poles, then the repulsive force is applied between the right thin film electromagnet and the right side of the movable part 3 a, and the left thin film electromagnet An attractive force acts between the movable part 3a and the left side of the movable part 3a, the movable part 3a falls down to the left side, and the left electric contact is turned on and the right electric contact is turned off. In addition, it is also possible to partially apply the above magnetic material as the movable portion 3a.

Next, a method of manufacturing the switching element shown in FIGS. First, as shown in FIG. 3A, a substrate 1a made of a ceramic mainly composed of alumina is prepared. The substrate la may be made of another crystal such as ceramic or silicon.

Next, as shown in FIG. 3b, lower magnetic yokes 2a and 2a 'are formed on the substrate 1a. The lower magnetic yokes 2 a and 2 a ′ are a 5 m-thick Ni—Fe alloy and are formed by an electroplating method.

The lower magnetic yokes 2a and 2a 'may be made of a material having a large saturation magnetization and a high magnetic permeability, and a Fe-based microcrystalline alloy such as a Co—Ni—Fe-based alloy or Fe—Ta—N-based alloy. Alternatively, a Co-based amorphous alloy such as Co—Ta—Zr or soft iron may be used. As a film forming method, a sputtering method, an evaporation method, or the like can be used in addition to the electric plating method. The thickness of the lower magnetic yokes 2a and 2a 'may be from 0.1 / zm to 500 im, more preferably from 1 m to 200 μm.

Next, as shown in FIG. 3c, thin film coils 2c and 2c 'are formed on the lower magnetic yokes 2a and 2a', respectively. Hereinafter, the formation of the thin-film coils 2c and 2c 'will be described in more detail. First, insulating layers 2e and 2e 'for insulating the lower magnetic yokes 2a and 2a' from the thin-film coils 2c and 2c are formed. For example, known photolithography A pattern of a photoresist is formed by a graphic technique, and the pattern is heated to 250 ° C. or more and cured to form the insulating layers 2 e and 2 e ′. Also, the insulating layers 2 e and 2 e ′ may be formed by processing a sputtered film of alumina or Si ₂ .

Next, thin-film coils 2c and 2c 'are formed on the insulating layers 2e and 2a'. For the thin film coils 2c and 2c ', a photoresist mask having a pattern with a groove in the coil shape is formed in advance, and Cu is selectively grown in the groove of the mask by the electroplating method. Then, a desired coil shape is formed. Further, insulating layers 2f and 2f 'for insulating and protecting the thin-film coils 2c and 2c' are formed. For example, the insulating layers 2f and 2f 'may be formed by forming a photoresist pattern by a known photolithography technique, and heating and curing the photoresist pattern at 250 ° C. or higher. The insulating layers 2 f and 2 f ′ may be formed by processing an alumina or Si ₂ sputtered film.

Next, as shown in FIG. 3D, upper magnetic yokes 2b and 2b 'are formed. The upper and magnetic yokes 2b and 2b 'may be made of, for example, a Ni-Fe alloy having a thickness of 20 µm, and may be formed by an electroplating method. The upper magnetic yokes 2b and 2b 'may be made of a material having a large saturation magnetization and a high magnetic permeability. For example, Fe-based alloys such as Co-Ni-Fe-based alloys and Fe-Ta-N It may be composed of a microcrystalline alloy, a Co amorphous alloy such as Co_Ta_Zr, or soft iron.

As a method for forming a film of these materials, a sputtering method, a vapor deposition method, or the like can be used in addition to the electroplating method. The thickness of the upper magnetic yokes 2b and 2b 'should be 0.1 μm to 50 ° μm, more preferably 1 μm to 200 m.

Next, as shown in FIG. 3e, the entire area is coated with an alumina film 1b by the Spack method, and subsequently, as shown in FIG. 3f, the alumina film 1b is flattened and polished to form a protective layer 1b. By doing so, the upper magnetic yokes 2b and 2b 'serving as magnetic poles are exposed on a flat surface.

Through the above steps, the base 1 having two thin-film electromagnets including the lower magnetic yokes 2a, 2a, the upper magnetic yokes 2b, 2b, and the thin-film coils 2c, 2c 'is completed. When the upper magnetic yokes 2b and 2b 'serving as magnetic poles are exposed on the surface, In both cases, the surface is flat, making it easier to construct structures on top. In addition, manufacturing an electromagnet using a thin process enables a plurality of electromagnets to be manufactured in an arbitrary arrangement on a substrate la, and also enables the manufacture of small electromagnets that are impossible with conventional machining. Make it possible.

Next, a process of manufacturing an electric contact and a movable structure on the base 1 manufactured in the above process will be described. First, as shown in FIG. 3g, insulating layers 6, 6 'for insulating the pole faces are formed on the upper magnetic yokes 2b, 2b' and the thin-film coils 2c, 2c '. The insulating layers 6 and 6 ′ may be formed by processing a film formed by sputtering alumina with a known photolithography technique and etching technique. As the etching technique, for example, ion beam etching can be used. The insulating layers 6 and 6 'are not always necessary, and may be formed as necessary.

Next, as shown in FIG. 3h, electric contacts 4, 4 'are formed on the upper magnetic yokes 2b, 2b' and the thin-film coils 2c, 2c. The electric contacts 4 and 4 'are formed by processing a sputtered gold film into a predetermined shape. Also in this processing, a desired shape may be formed by ion beam etching using a photoresist mask manufactured by a known photolithography technique. In addition, as a material of the electrical contact, in addition to platinum, a metal containing at least one of rhodium, palladium, gold, and ruthenium can be used.

Next, as shown in FIG. 3i, a sacrifice layer 10 having an opening is formed at a position where a pillar 3b described later is formed. In the sacrificial layer 10, first, a photoresist pattern is formed on the column 3 b forming portion by a known photolithography technique, and in this state, a copper film is selectively formed to a thickness of 50 μm by an electroplating method. It may be formed by depositing to about πι. The thickness of the sacrificial layer 10 can be adjusted from about 0.05 μπι to about 500 μπι. The sacrifice layer 10 may be made of a photoresist.

Next, as shown in FIG. 3D, a support film 3b is formed by growing an Au film in the opening of the sacrificial layer 10 by plating. Next, as shown in FIG. 4A, a flat layer 11 made of a partially plated copper film on the support portion 3b is formed. After this, A spring material is deposited on the flattening layer 11 including the open portion by sputtering to form a thin film, and this thin film is processed by a known photolithography technique and etching technique, as shown in FIG. The spring portion 3c is formed. After a photoresist mask is formed in advance, a spring material may be formed by sputtering, and the shape of the spring portion may be formed by lift-off.

The formation of the thin film is not limited to the sputtering method, and another vapor phase growth method such as a vacuum evaporation method may be used. Needless to say, the thin film may be formed by a liquid phase growth method such as a plating method.

As the spring material, a CoTaZrCr amorphous alloy may be used. As the spring material, an amorphous metal containing Ta or W as a main component, or a shape memory metal such as a Ni_Ti alloy can be used. Further, phosphor bronze, beryllium copper, aluminum alloy, or the like having various compositions can be used. The advantage of using amorphous metal is that since there is no crystal grain boundary, metal fatigue from the grain boundary does not occur in principle, and a highly reliable and long-lasting spring can be realized. . An advantage of using a shape memory metal is that an initial shape can be maintained against repeated deformation. As described above, according to the present embodiment, each of them can be properly used according to the purpose. After forming the spring portion 3c, as shown in FIG. 4c, the electrical contacts 5, 5 'are formed on the flattening layer 11 corresponding to the upper portions of the electrical contacts 4, 4'. This can be formed by forming a photoresist mask in advance, forming a film by sputtering, and forming a shape of an electrical contact by lift-off. Platinum sputtered films are used as the electric contacts 5 and 5 '. Further, a metal containing at least one of platinum, rhodium, palladium, gold, and ruthenium can be used.

Next, as shown in FIG. 4D, a flattening layer 11 ′ is formed, and the steps between the spring portion 3c and the electric contacts 5, 5 ′ are flattened. The flattening layer 1 1 ′ is formed by forming a photoresist mask on the spring portion 3 c and the electrical contacts 5, 5, and forming a Cu film by a highly directional sputtering method using an ion beam sputtering method. It may be formed by lift-off by removing the photoresist mask. As another method of forming the flattening layer, a method of applying a photoresist film and then removing the photoresist film in the portions of the spring portions 3c and the electrical contacts 5, 5 'is possible. In any case, The planarization layer 11 'is finally removed together with the sacrificial layer 10 and the planarization layer 11.

Next, as shown in FIG. 4e, the movable portion 3a is formed. The movable section 3a is formed by forming a film of the movable section material by sputtering and then performing patterning by a known photolithography technique. Alternatively, after forming a photoresist mask on the flattening layer 11 'in advance, a film of the movable portion material may be formed, and the shape of the movable portion may be formed by lift-off. The thickness of the movable part 3a is 1 inch. The thickness of the movable part 3a can be adjusted from 0.1 μm to 100 μm. More preferably, it is 0,5 μm¾ and 10 / zm.

The material used for the movable portion 3a has a magnetic material. As the magnetic material used for the movable portion 3a, a soft magnetic material can be used. Soft magnetic materials include Fe-based microcrystalline alloys such as Ni-Fe alloy, Co-Ni-Fe alloy, Fe-Ta-N, and Co-based materials such as Co-Ta-Zr. Amorphous alloy, soft iron, etc. are suitable.

Further, as the magnetic material of the movable portion 3a, a magnetic material that easily forms residual magnetization can be used. Examples of the magnetic material that easily forms remanent magnetization include: 0—〇 1—curan 1 alloy, J 0— (): — Cho alloy, Sm—Co alloy, Nd—Fe—B alloy, Fe—A 1—N i _Co alloy , Fe_Cr-Co alloy, Co-Fe-V alloy, Cu-Ni-Fe alloy, etc. Movable made of magnetic material that easily forms remanent magnetization The portion 3a is magnetized in the left-right direction in FIG. 4e, for example, the left side is an N pole, and the right side is an S pole.

Finally, by removing the sacrificial layer 10 and the flattening layers 11 and 11 ', a movable part 3a is formed on the support part 3b via the spring part 3c as shown in Fig. 4f. The obtained state is obtained. When the sacrificial layer 10 and the planarizing layers 11 and 11 ′ are made of Cu, they are removed by chemical etching. When the sacrificial layer 10 and the planarizing layers 11 and 11 ′ are photoresists, they can be removed by oxygen asshing. Through the above steps, the switching element shown in FIGS. 1A and 1B can be formed.

Next, another embodiment of the present invention will be described. FIG. 5A is a plan view showing a configuration example of the switching element in the present embodiment, and FIG. 5B is a cross-sectional view. This sweet The chucking element has a lower magnetic yoke 12a disposed on _a base 11a, and further includes a thin-film coil 12c and an upper magnetic yoke 12b. At the center of the winding of the thin film coil 12c, the upper magnetic yoke 12b crosses the thin film coil. In other words, the upper magnetic yoke 12b passes through the center of the winding of the thin-film coil 12c.

The upper magnetic yoke 12b and the lower magnetic yoke 12a are magnetically connected. When a current flows through the thin film coil 12c, the magnetic yoke is magnetized to form N (S) and S (N) magnetic poles. Since the lower magnetic yoke 12a can be formed sufficiently large in the plane, the demagnetizing field can be reduced, and the magnetic yoke is easily magnetized even with a small coil current. The lower magnetic yoke 12a can be expanded up to the end of the base 11a. The connection portion 12d is formed of the same magnetic material as the upper magnetic yoke 12b.

The upper magnetic yoke 12b is made of a Ni-Fe alloy having a thickness of 100 µm, and can be formed by an electroplating method. The upper magnetic yoke 12b may be made of a material having high saturation magnetization and high magnetic permeability, such as a Co-Ni-Fe-based alloy, an Fe-based microcrystalline alloy such as Fe-Ta-N, or a Co- A Co-based amorphous alloy such as Ta—Zr or soft iron may be used. As a method for forming a film of these materials, a sputtering method, an evaporation method, or the like can be used in addition to the electric plating method. The monthly thickness of the upper magnetic yoke 12b is 0.1 μm to 200 μm, more preferably Ιμπι to 100 μm.

The lower magnetic yoke 12a may be made of a soft magnetic material. Specifically, any material having a high saturation magnetization and a high magnetic permeability may be used. A 6-system alloy, a Fe-based microcrystalline alloy such as Fe—Ta—N, a Co-based amorphous alloy such as Co—Ta—Zr, or a soft iron may be used. As a method for forming a film of these materials, a sputtering method, an evaporation method, or the like can be used in addition to the electric plating method. The film thickness of the lower magnetic yoke 2a is 0.1 μπι to 500 im, more preferably 1 μm to 200 m.

The thin-film electromagnet including the lower magnetic yoke 12a, the upper magnetic yoke 12b, the thin-film coil 12c, and the connection portion 12d is applied to the protective layer 11 on the base 11a. Therefore, the upper magnetic yoke 12b, which is flattened and becomes a magnetic pole, is exposed on the flat surface. An electrical contact 14 is provided on 1 lb of the protection, and is fixed via an insulating film 13 b on a support 13 d formed by connecting to the connection 12 d. The movable portion 13a is fixed via the spring portion 13c. The movable part 13 a is provided with an electric contact 15 at a position facing the electric contact 14.

As shown in FIG. 2A, the spring portion 13c has a thin film structure composed of one or more planes and another one or more planes continuous with this plane at a predetermined angle. The predetermined angle may be, for example, approximately 90 °. With this configuration, the bending of the spring portion as shown in FIG. 11 described above is suppressed. As the structure of the spring portion 31c, not only the structure shown in FIG. 2A but also the structures shown in FIGS. 2B, 2C, 2D, and 2E are effective. By the way, there may be no connection part 13d between the movable part 13a and the base body 11. The connection portion 13d can be formed of the same magnetic material as the upper magnetic yoke 12b.

By making the movable portion 13a a magnetic material, an electromagnetic force acts between the end of the movable portion 13a and the upper surface of the upper magnetic yoke 12b. As the magnetic material of the movable portion 13a, a soft magnetic material can be used. Soft magnetic materials include Fe microcrystalline alloys such as Ni_Fe alloy, Co—Ni—Fe alloy, Fe—Ta—N, and Co such as Co—Ta—Zr. Amorphous alloys, soft iron, etc. are suitable. By passing a current through the thin-film coil 12c, a magnetic flux is generated in the upper magnetic yoke 12b, and the movable portion 13a is attracted to the upper magnetic yoke 12b. As a result, the electrical contact 14 and the electrical contact 15 come into contact with each other and switching is performed.

Further, as the magnetic material of the movable portion 13a, a magnetic material that easily forms residual magnetization can be used. Magnetic materials that easily form remanent magnetization include Co—Cr—Pt alloys. _0- J 1: Alloy and alloy, Sm-Co alloy, Nd-Fe-B alloy, Fe-A1-Ni-C0 alloy, Fe_Cr-Co alloy, Co-F e-V alloys, Cu-Ni-Fe alloys, etc. are suitable.

The operation of the movable portion 13a made of a magnetic material that easily forms residual magnetization is as follows. The movable portion 13a is magnetized in the left-right direction in FIG. 5a. For example, the left side is an N pole, and the right side is an S pole. In this state, the surface of the upper magnetic yoke 12 b is Or operate to be S pole. Thus, for example, in the case of an N pole, an attractive force acts between the upper magnetic yoke 12b and the right end of the movable portion 13a, and the right end of the movable portion 13a faces the upper magnetic yoke 12b. It falls down and the electrical contacts turn on.

Even if the coil current is turned off in this state, an attractive force acts between the magnetic pole of the upper magnetic yoke 12b and the movable part 13a due to the residual magnetization of the movable part 13a. Remains down and the electrical contacts remain on. In this state, assuming that the surface of the upper magnetic yoke 1 2 b is the S pole, a repulsive force acts between the upper magnetic yoke 12 b and the movable portion 13 a, and the movable portion 13 a returns to its original position. The electrical contacts are turned off. Note that the above-described magnetic material can be partially applied to the movable portion 13a.

Example 3>

Next, another embodiment of the present invention will be described. FIG. 6A is a plan view illustrating a configuration example of the switching element according to the present embodiment, and FIG. 6B is a cross-sectional view. This switching element includes a lower magnetic yoke 2a, 2a 'on a substrate 1a, a thin-film coil 2c, 2c' and an upper magnetic yoke 2b, 2b '. At the center of the winding of the thin film coil 2c2c, the upper magnetic yokes 2b, 2b 'intersect with the thin film coil 2c, 2c.

The upper magnetic yokes 2b, 2b 'and the lower magnetic yokes 2a, 2a' are magnetically connected, and when a current flows through the thin-film coils 2c, 2c ', these magnetic yokes are magnetized. , S form a magnetic pole. Upper magnetic yoke 2b, 2b ', lower magnetic yoke 2a,

The two thin-film electromagnets consisting of 2a,, and the thin-film coils 2c, 2c 'are flattened by the protective layer 1b on the substrate 1a, and the upper magnetic yokes 2b, 213, which become magnetic poles, It is in an exposed state.

In addition, the switching element in FIG. 6 has a reflective surface for reflecting light on the protective layer lb, and a movable part 3a functioning as a mirror for reflecting light is provided via spring parts 3c and 3c '. And are fixed to the support portions 3b, 3b '. The movable portion 3a is supported from both sides by support portions 3b, 3b 'via spring portions 3c, 3c, and a spring portion 3c, 3b.

The point of contact with 3 c ′ is a fulcrum, and extends on both sides of the fulcrum.

The spring portions 3c, 3c 'are composed of one or more planes as shown in FIG. A thin-film structural member consisting of one or more other continuous planes at a fixed angle. It is also assumed that the predetermined angle is approximately 90 °. By doing so, the bending of the spring portion as shown in FIG. 11 described above is suppressed. The structure of the spring portions 3c and 3c 'is not limited to the structure shown in FIG. 2a, but is also effective in the structures shown in FIGS. 2b, 2c, 2d and 2e.

The surface of the movable part 3a is coated with a material suitable for reflecting light. Specifically, the entire surface of the movable portion 3a, or at least a region to which light is applied, is coated with a thin film of gold or silver. The gold or silver thin film may be formed by a sputtering method or a vapor deposition method. Here, the movable part 3a is composed of one or more planes as shown in FIG. 7a, FIG. 7b, FIG. 7c, and FIG. A thin-film structural member composed of one or more flat surfaces. It is also assumed that the predetermined angle is approximately 90 °. With this configuration, the curvature of a part of the mirror as shown in FIG. 12 is suppressed.

As shown in FIG. 7e, the movable portion 3a may be a thin film structural member composed of one or more planes and another curved surface continuous with this plane at 90 °, for example. good. Even with such a structure, the bending of the mirror section as shown in FIG. 12 is suppressed. The same applies to the spring portion, which is a thin film structural member composed of a thin film having one or more surfaces and another one or more surfaces continuous with this surface at a predetermined angle. , The above-described bending and the like can be suppressed. Hereinafter, a method of manufacturing the movable portion 3a will be described with reference to FIG. In FIG. 8, the base part is omitted. First, as shown in FIG. 8A, after forming a sacrificial layer 21 on a base portion (not shown), as shown in FIG. 8B, a mask pattern 22 having an opening in a predetermined region is formed. Next, as shown in FIG. 8C, the sacrificial film 21 is selectively etched using the mask pattern 22 to form a concave portion in the sacrificial film 21.

After removing the mask pattern 22, as shown in FIG. 8 d, a thin film 23 serving as a movable portion is formed on the sacrificial film 21 along the concave portion, and as shown in FIG. 8 e, A mask pattern 24 is formed on the thin film 23. Next, the thin film 23 is selectively etched using the mask pattern 24 as a mask, and as shown in FIG. To form Thereafter, by removing the mask pattern 24 and the sacrificial film 21, the movable portion 3a is obtained as shown in FIG. 8g.

The thin film 23 may be formed by a vapor deposition method such as a sputtering method and a vacuum evaporation method. Further, the thin film may be formed by a liquid phase growth method such as a plating method.

Next, the operation of the movable section 3a will be described. By using a magnetic material for the movable part 3a, an electromagnetic force acts between the end of the movable part and the upper surface of the upper magnetic contacts 2b, 2b ', which are the magnetic poles of the thin film electromagnets 2,2. It can be. The movable portion 3a may be made of a soft magnetic material. Soft magnetic materials constituting the corner 3a include Fe microcrystalline alloys such as Ni_Fe alloy, Co—Ni—Fe alloy, Fe—Ta—N, and Co—Ta—Z. Suitable are Co-based amorphous alloys such as r, and soft iron.

By passing current alternately through the thin-film coils 2 c and 2 c ′, magnetic flux is generated between the upper magnetic yokes 2 b and 2 b ′, and the movable part 3 is moved to the upper magnetic yoke side where the magnetic flux is generated. a can be drawn. At this time, the inclination angle of the movable portion 3a can be controlled by adjusting the current amount of the thin film coils 2c and 2c '. Therefore, according to the switching element of FIG. 6, an optical switch capable of analog control can be realized.

Further, the movable portion 3a may be made of a magnetic material that easily forms residual magnetization. Magnetic materials that easily form remanent magnetization include Co—Cr—Pt alloys, CoCr—Ta alloys, Sm—Co alloys, Nd—Fe—B alloys, Fe-A1-Ni-Co-based alloys, Fe-Cr-Co-based alloys, Co-Fe-V-based alloys, and Cu-Ni-Fe-based alloys are suitable.

When the movable portion 3a is made of a magnetic material that easily forms residual magnetization, it can be operated as described below. First, magnetization is performed in the left-right direction in FIG. 6, for example, the left side is an N pole, and the right side is an S pole. In this state, the left and right upper magnetic yokes 2b, 2b 'are operated so that their surfaces become N pole or S pole at the same time. Thus, for example, in the case of N poles, an attractive force acts between the upper magnetic yoke 2 b on the right and the movable part 3 a, and a repulsive force acts between the upper magnetic yoke 2 b on the left and the movable part, The movable part 3a falls to the right. In this state, by adjusting the current amount of the thin film coils 2 c and 2 c ′, The inclination angle of the moving part 3a can be controlled. In other words, an optical switch capable of controlling a ^single port is realized.

Further, even if the current to the thin-film coils 2 c and 2 c ′ is cut off with the movable portion 3 a tilted to the right and this end contacting the upper magnetic yoke 2 b ′, the movable portion 3 a remains. Due to demagnetization, an attractive force acts between the magnetic pole of the upper magnetic yoke 2 b ′ on the right side and the movable part 3 a, so that the movable part 3 a remains to the right. Next, assuming that the left and right upper magnetic yokes 2 b, 2 b ′ have the S-pole simultaneously, this time, the repulsive force is applied between the right upper magnetic yoke 2 b ′ and the movable part 3 a, and the left upper magnetic yoke An attractive force acts between 2b and the movable part 3a, and the movable part 3a falls to the left.

In this state, the left and right thin-film electromagnets are alternately operated while the left and right poles are magnetized in the left and right directions in Fig. 6 with the N pole on the left side and the S pole on the right side. By using force, analog control that achieves a stable and large swing angle is realized. In the case of using the attractive force between the magnetic poles, if the magnetic pole interval is narrowed to some extent, the attractive force between the two magnetic poles increases rapidly, and it becomes impossible to control the angle of the movable part. On the other hand, using repulsive force between magnetic poles can solve this problem.

For example, in a state where the electric current to the thin film coils 2c and 2c 'is cut off, the movable portion 3a is supported by the spring portions 3c and 3c' and is kept horizontal. In this state, a current is applied to the thin-film coil 2c so that the upper surface of the upper left magnetic yoke 2b becomes the N pole. As a result, a repulsive force is generated at the left ends of the upper magnetic yoke 2b and the movable portion 3a, and the movable portion 3a is inclined rightward and inclined until the right end contacts the upper surface of the right upper magnetic yoke 2b '.

At this time, the right end of the movable portion 3a is an S pole, and when the right end of the movable portion 3a and the upper surface of the upper magnetic yoke 2b 'on the right approach, the attractive force of both increases. Here, the current of the thin-film coil 2c 'is adjusted so that no magnetic pole is generated on the upper surface of the upper right magnetic yoke 2b' so as to cancel the attractive force of both. This allows analog control until the right end of the movable portion 3a contacts the upper surface of the right upper magnetic yoke 2b '.

Conversely, when a current is applied to the thin-film coil 2c so that the upper surface of the upper right magnetic yoke 2b 'on the right side becomes an N pole, a repulsive force is generated between the upper magnetic yoke 2b' and the right end of the movable portion 3a, and The moving part 3a inclines to the left and inclines until the left end contacts the upper surface of the upper magnetic yoke 2b. At this time, the left end of the movable portion 3a is an N pole, and when the left end of the movable portion 3a and the upper surface of the upper magnetic yoke 2b approach, the attractive force of both increases. Here, in order to cancel the attractive force of both, the current of the thin film coil 2c is adjusted so that no magnetic pole is generated on the upper surface of the upper left magnetic yoke 2b. Thus, it is possible to perform analog aperture control until the left end of the movable portion 3a contacts the upper surface of the upper magnetic yoke 2b.

As described above, according to the switching element of the present embodiment, an analog controlled optical switch that can obtain a stable and large swing angle is realized. Note that as the movable portion 3a, the above-described magnetic material can be partially applied to the movable portion 3a. <Example 4>

Hereinafter, another embodiment of the present invention will be described. FIG. 9A is a plan view showing a configuration example of the switching element in this embodiment, and FIG. 9B is a cross-sectional view. This switching element has lower magnetic yokes 2a and 2a 'on a substrate 1a, and thin-film coils 2c and 2c' and upper magnetic yokes 2b and .2b on this. . The upper magnetic yokes 2 b and 2 b ′ are at the center of the windings of the thin film coils 2 c and 2 c ′.

Intersects 2 c 2 c '. In other words, the upper magnetic yokes 2b, 2b, penetrate the center of the windings of the thin-film coils 2c, 2c '.

The upper magnetic yokes 2b, 2b 'and the lower magnetic yokes 2a, 2a' are magnetically connected, and when a current flows through the thin-film coils 2c, 2c ', these magnetic yokes are magnetized. Form N, S magnetic poles. The lower magnetic yokes 2 a and 2 a ′, the upper magnetic yokes 2 b and 2 b ′, and the thin-film coils 2 c and 2 c ′ are flattened by a protective layer 1 b on the substrate la. Upper magnetic yoke 2 b, 2 b 'なる serving as a magnetic pole ヽ Exposed on the flat surface of protective layer 1 b

In addition, the switching elements of FIGS. 9a and 9b are provided with a spring part 3c,

It has a movable structure 3a fixed to the supports 3b, 3b 'via 3c'. The movable portion 3a is supported on the support portions 3b, 3b, via spring portions 3c, 3c 'on both sides of the center portion, and contacts the spring portions 3c, 3c'. With the position as a fulcrum, it extends on both sides of the fulcrum. In addition, the movable portion 3a is configured such that the spring portions 3c, 3c 'are formed by one or more planes as shown in FIG. 2a and another one or more planes formed at a predetermined angle with this plane. And a thin film structural member composed of Also, when the predetermined angle is approximately 90 °, Suppose there is. By doing so, the bending of the spring portion as shown in FIG. 11 described above is suppressed. The structure of the spring portions 3c and 3c 'is effective not only in the structure shown in FIG. 2A but also in the structures shown in FIGS. 2B, 2C, 2D and 2E.

In addition, the switching element of the present embodiment includes a mirror structure 9 for reflecting light on the upper surface of the movable portion 3a. The mirror structure 9 may be manufactured by forming a metal film or an insulating film to be a mirror structure on a sacrificial layer formed in advance by sputtering or the like, and patterning this. In addition, the mirror structure 9 has one or more surfaces as shown in FIGS. 7a, 7b, 7c, 7d, and 7e, and another surface that is continuous at a predetermined angle to the surfaces. And a thin film structural member comprising at least one surface. Here, the predetermined angle may be, for example, approximately 90 °. With such a configuration, the bending of the mirror section as shown in FIG. 12 is suppressed.

Hereinafter, the operation of the movable portion 3a will be described. By using the movable part 3a as a magnetic 1 "living body, an electromagnetic force acts between the end of the movable part and the upper surfaces of the upper magnetic yokes 2b and 2b ', which are the magnetic poles of the thin film electromagnets 2 and 2'. The movable portion 3a may be made of a soft magnetic material, such as] ^ 1-6 alloy, Co-Ni-Fe alloy, Fe-Ta-^^, any Fe type. Microcrystalline alloys, Co-based amorphous alloys such as Co-Ta_Zr, and soft iron are suitable.

By alternately passing a current through the thin film coils 2 c, 2 c ′, magnetic flux is generated mutually in the upper magnetic yokes 2 b, 2 b ′, and the upper magnetic yokes 2 b, 2 b, where the magnetic flux is generated The movable part 3a is drawn to the position. At this time, by adjusting the current amount of the thin-film coils 2c and 2c ', the inclination angle of the movable portion 3a can be controlled. Accordingly, an optical switch capable of analog control is realized by controlling the current amount of the thin-film coils 2c and 2c '.

Further, the movable portion 3a may be made of a magnetic material that easily forms a remanent magnet. As a magnetic substance that easily forms residual magnetization, 、 0 _〇 1: ー? 1: Alloy, Co—Cr—Ta alloy, Sm_Co alloy, Nd—Fe—B alloy, Fe—Al—Ni—Co alloy, Fe—Cr—Co Alloys, 〇0-6- ¥ alloys, Cu-Ni-Fe alloys, etc. are suitable. The operation of the switching element configured as described above will be described. First, the movable part 3a made of a magnetic material that easily forms residual magnetization is 9a and 9b are magnetized in the left and right direction. For example, the left side is the N pole, and the right side is the S pole. On the other hand, the surfaces of the left and right upper magnetic yokes 2b, 2b 'are operated so as to be N-pole or S-pole at the same time.

From the above, for example, when the N pole is used, the attractive force is applied between the upper magnetic yoke 2 b ′ on the right and the movable part 3 a, and the attractive force is generated between the upper magnetic yoke 2 b and the movable part 3 a on the left. The repulsive force acts, and the movable part 3a falls to the right. In this state, by adjusting the current amount of the thin-film coils 2c and 2c ', the inclination angle of the movable portion 3a can be controlled. That is, an optical switch capable of analog control is realized.

Further, even if the current to the thin-film coils 2 c and 2 c ′ is cut off while the movable part is tilted to the right and brought into contact with the upper magnetic yoke 2 b ′, the residual magnetization of the movable part 3 a causes Since an attractive force acts between the magnetic poles of the magnetic yokes 2b and 2 and the movable portion a, the movable portion 3a remains to the right. Thereafter, if the surfaces of the left and right upper magnetic yokes 2 b, 2 b ′ are simultaneously S poles, this time, a repulsive force is applied between the right upper magnetic yoke 2 a ′ and the movable part 3 a, and the left upper magnetic yoke An attractive force acts between 2a and movable part a, and movable part a falls to the left.

As described above, the movable part 3a is magnetized in the left and right directions in FIGS. 9a and 9b, and the left and right electromagnets 2 and 2 'are alternately arranged with the left side having the N pole and the right side having the S pole. By operating and always making the force between the movable body 3a and the movable body 3a a repulsive force, analog control that can obtain a stable and large swing angle is realized. When the attractive force between the magnetic poles is used, if the magnetic pole interval is narrowed to some extent, the attractive force between both magnetic poles increases rapidly, and the angle control of the movable part cannot be performed. On the other hand, repulsive force between magnetic poles can solve this problem.

For example, in a state in which the current to the thin film coils 2 c and 2 c ′ is cut off, the movable portion 3 a is supported by the spring portions 3 c and 3 c ′ and keeps a horizontal position. In this state, a current is supplied to the thin-film coil 2c so that the upper surface of the upper left magnetic yoke 2b becomes the N pole. As a result, a repulsive force is generated between the upper magnetic yoke 2b and the left end of the movable portion 3a, the movable portion 3a is inclined rightward, and the right end of the movable portion 3a is positioned on the right upper magnetic yoke 2b, the upper surface. Slanting until it touches.

At this time, the right end of the movable portion 3a is an S pole, and when the right end of the movable portion 3a and the upper surface of the right magnetic yoke approach, the attractive force of both increases. At this time, strike both gravitational forces The current of the thin-film coil 2c 'is adjusted so that no magnetic pole is generated on the upper surface of the upper right magnetic yoke 2b'. Thus, analog control is possible until the right end of the movable portion 3a contacts the upper surface of the upper right magnetic yoke 2b.

Contrary to the above, when a current is applied to the thin-film coil 2c 'so that the upper surface of the upper right magnetic yoke 2b, on the right side becomes an N pole, the upper magnetic yoke 2b' and the right end of the movable portion 3a A repulsive force is generated, and the movable portion 3a inclines to the left and inclines until the left end contacts the upper surface of the upper left magnetic yoke 2b. In this state, the left end of the movable portion 3a has an N pole, and when the left end of the movable portion 3a and the upper surface of the left magnetic yoke approach each other, the attractive force of both increases. Here, in order to cancel the attractive force of both, the current of the thin-film coil 2c is adjusted so that no magnetic pole is generated on the upper surface of the upper magnetic yoke 2b on the left side. bAnalog control until touching the top surface is possible.

As described above, according to the switching element of this embodiment, an analog-controlled optical switch that can obtain a stable and large swing angle is realized. In addition, as the movable portion 3a, the above-described magnetic material can be partially applied to the movable portion 3a.

As described above, according to the switching element of the present embodiment, an optical switch of analog control that can obtain a stable and large swing angle is realized. In addition, as the movable portion 3a, the above-described magnetic material can be partially applied to the movable portion 3a.

As described above, according to the present invention, an excellent effect of suppressing the occurrence of warpage in a movable portion such as a hinge spring / mirror and realizing a highly reliable switching operation can be obtained.

As described above, the thin film structural member according to the present invention, the method of manufacturing the same, and the switching element using the same are capable of turning on / off a signal having a wide frequency range from DC to gigahertz or more, and capable of wavelength conversion. It is suitable for micro 'electronics' mechanical system (MEMS) switches applicable to various semiconductor lasers, optical filters and optical switches.

Claims

Scope of Claim 1. A thin film structural member comprising a thin film having at least one surface and at least one other surface continuous with the surface at a predetermined angle.

2. The thin-film structural member according to claim 1,

The thin film structural member, wherein the one or more surfaces and the another one or more surfaces are integrally formed by the thin film.

3. The thin-film structural member according to claim 1,

The thin film structural member, wherein the predetermined angle is approximately 90 °.

4. The thin-film structural member according to claim 2,

5. The thin film structural member according to claim 1,

The thin film structural member, wherein the thin film structural member functions as a torsion spring.

6. The thin-film structural member according to claim 2,

7. The thin film structural member according to claim 1,

The thin film structural member is provided with a reflecting surface for reflecting light.

8. The thin film structural member according to claim 2,

9. The thin-film structural member according to claim 1,

The thin film structural member, wherein the thin film is formed by any one of a vapor phase growth method and a liquid phase growth method.

10. The thin film structural member according to claim 2,

The thin film is formed by either a vapor phase growth method or a liquid phase growth method. A thin film structural member, characterized in that:

11. The thin-film structural member according to claim 9,

The thin film structural member, wherein the vapor deposition method is any one of a sputtering method, a vacuum deposition method, and a chemical vapor deposition method.

12. The thin-film structural member according to claim 9,

The said liquid phase growth method is a plating method, The thin film structural member characterized by the above-mentioned.

13. forming a sacrificial layer on the fixed structure having a recess formed of at least one other surface continuous at a predetermined angle with respect to the main surface;

Forming a thin film on the surface of the sacrificial layer along the recesses;

Removing the sacrificial layer under the thin film;

With

Forming a thin-film structural member comprising the thin film on the fixed structure, the thin-film member having one or more surfaces and another one or more surfaces continuous with this surface at a predetermined angle. A method for manufacturing a structural member.

1 4. A switching element comprising a fixed structure and a movable structure disposed thereon,

A support member disposed on the movable structure,

A movable member connected to the support member by a spring member;

Driving means formed on the fixed structure to apply a predetermined force to the movable member;

With

The spring member is a thin film structural member composed of a thin film composed of one or more surfaces and another one or more surfaces continuous with a predetermined angle with this surface and a force.

A switching element, characterized in that:

15. The switching element according to claim 14, wherein:

The switching element, wherein the predetermined angle is approximately 90 °.

16. The switching device according to claim 14, wherein:

The switching element, wherein the driving unit is an electromagnet for applying a magnetic force to the movable member.

17. A switching element comprising a fixed structure and a movable structure disposed thereon,

A support member disposed on the movable structure,

A movable member connected to the support member by a spring member;

With

The movable member is a thin-film structural member including a flat reflecting surface that reflects light, and further including one or more other surfaces that are continuous with the reflecting surface at a predetermined angle. Switching element.

18. The switching element according to claim 17,

The switching element, wherein the predetermined angle is approximately 90 °.

1 9. The switching element according to claim 17,

20. The switching element according to claim 14,

A first electrical contact disposed on the fixed structure;

A second electrical contact provided on the movable member so as to be able to contact the first electrical contact.

A switching element.