WO2003030273A1 - Light emitting element and method for manufacture thereof - Google Patents
Light emitting element and method for manufacture thereof Download PDFInfo
- Publication number
- WO2003030273A1 WO2003030273A1 PCT/JP2002/007471 JP0207471W WO03030273A1 WO 2003030273 A1 WO2003030273 A1 WO 2003030273A1 JP 0207471 W JP0207471 W JP 0207471W WO 03030273 A1 WO03030273 A1 WO 03030273A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type
- layer
- emitting element
- light emitting
- crystal layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02584—Delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/484,408 US6982438B2 (en) | 2001-07-25 | 2002-07-24 | Light emitting device and method for fabricating the same |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001225139A JP4277246B2 (ja) | 2001-07-25 | 2001-07-25 | 発光素子 |
| JP2001-225139 | 2001-07-25 | ||
| JP2001307324A JP4016245B2 (ja) | 2001-10-03 | 2001-10-03 | 発光素子及びその製造方法 |
| JP2001-307324 | 2001-10-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2003030273A1 true WO2003030273A1 (en) | 2003-04-10 |
Family
ID=26619273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/007471 WO2003030273A1 (en) | 2001-07-25 | 2002-07-24 | Light emitting element and method for manufacture thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6982438B2 (ja) |
| CN (1) | CN100356590C (ja) |
| TW (1) | TW550839B (ja) |
| WO (1) | WO2003030273A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7525128B2 (en) | 2004-05-14 | 2009-04-28 | Cermet, Inc. | Zinc-oxide-based double-heterostructure light-emitting diode |
| US8053755B2 (en) | 2004-09-17 | 2011-11-08 | Optogan Oy | Semiconductor heterostructure |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4431925B2 (ja) * | 2000-11-30 | 2010-03-17 | 信越半導体株式会社 | 発光素子の製造方法 |
| US20050141800A1 (en) * | 2002-09-17 | 2005-06-30 | Mitsubishi Denki Kabushiki Kaisha | Waveguide semiconductor optical device and process of fabricating the device |
| JP3720341B2 (ja) * | 2003-02-12 | 2005-11-24 | ローム株式会社 | 半導体発光素子 |
| JP4034208B2 (ja) | 2003-02-25 | 2008-01-16 | ローム株式会社 | 透明電極 |
| JP2004296796A (ja) * | 2003-03-27 | 2004-10-21 | Shin Etsu Handotai Co Ltd | 発光素子および発光素子の製造方法 |
| US20050051781A1 (en) * | 2003-09-08 | 2005-03-10 | United Epitaxy Company, Ltd. | Light emitting diode and method of making the same |
| NO20041523L (no) * | 2003-09-19 | 2005-03-21 | Sumitomo Electric Industries | Lysemitterende halvlederelement |
| KR100571819B1 (ko) * | 2003-10-16 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| US7262318B2 (en) * | 2004-03-10 | 2007-08-28 | Pfizer, Inc. | Substituted heteroaryl- and phenylsulfamoyl compounds |
| US20050288340A1 (en) * | 2004-06-29 | 2005-12-29 | Pfizer Inc | Substituted heteroaryl- and phenylsulfamoyl compounds |
| KR100662191B1 (ko) * | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| CN100356642C (zh) * | 2005-01-28 | 2007-12-19 | 浙江大学 | 一种c－MgxZn1－xO/MgO多量子阱异质结构材料及其制备工艺 |
| JP4210665B2 (ja) * | 2005-03-24 | 2009-01-21 | ローム株式会社 | 酸化亜鉛系化合物半導体発光素子 |
| JP4212105B2 (ja) * | 2005-03-24 | 2009-01-21 | ローム株式会社 | 酸化亜鉛系化合物半導体素子 |
| CN1317749C (zh) * | 2005-04-05 | 2007-05-23 | 中国科学院物理研究所 | 含三种掺杂剂的p型氧化锌薄膜及其制造方法 |
| JP2006303237A (ja) * | 2005-04-21 | 2006-11-02 | Sharp Corp | 化合物半導体レーザ素子 |
| WO2007018216A1 (ja) * | 2005-08-09 | 2007-02-15 | Stanley Electric Co., Ltd. | ＺｎＯ結晶とその成長方法、及び発光素子の製造方法 |
| JP4988179B2 (ja) * | 2005-09-22 | 2012-08-01 | ローム株式会社 | 酸化亜鉛系化合物半導体素子 |
| WO2007067166A1 (en) * | 2005-12-06 | 2007-06-14 | Moxtronics, Inc. | Metal oxide semiconductor devices and film structures and methods |
| US20070126021A1 (en) * | 2005-12-06 | 2007-06-07 | Yungryel Ryu | Metal oxide semiconductor film structures and methods |
| JP2009043913A (ja) * | 2007-08-08 | 2009-02-26 | Rohm Co Ltd | 半導体装置及び半導体装置の製造方法 |
| TW200933754A (en) * | 2007-08-27 | 2009-08-01 | Rohm Co Ltd | Zno-based thin film and semiconductor element |
| CN101419988B (zh) * | 2008-10-14 | 2011-07-27 | 中山大学 | 一种p-NiO/n-MgxZn1-xO禁带宽度梯度化p-n结二极管及其制备方法 |
| CN101447547B (zh) * | 2008-12-26 | 2010-09-08 | 北京化工大学 | 一种制备镍离子掺杂氧化锌/锌铝尖晶石发光薄膜的方法 |
| WO2011132394A1 (ja) * | 2010-04-20 | 2011-10-27 | パナソニック株式会社 | 発光ダイオード |
| JP2011238678A (ja) * | 2010-05-07 | 2011-11-24 | Panasonic Corp | 半導体発光装置 |
| JP5242867B1 (ja) * | 2011-10-06 | 2013-07-24 | 独立行政法人科学技術振興機構 | 結晶および積層体 |
| CN104124282B (zh) * | 2013-04-25 | 2018-04-10 | 天津职业技术师范大学 | 一种Si/NiO:Na异质pn结二极管 |
| US11158761B2 (en) | 2019-05-07 | 2021-10-26 | Facebook Technologies, Llc | Bonding methods for light emitting diodes |
| CN112670356B (zh) * | 2020-12-24 | 2023-05-12 | 湖南科莱特光电有限公司 | 单分子层内δ掺杂的半导体材料及其制备方法和探测器 |
| WO2025103577A1 (en) * | 2023-11-14 | 2025-05-22 | Ams-Osram International Gmbh | Light emitting device with multi-layered barrier layer |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0992930A (ja) * | 1995-09-25 | 1997-04-04 | Sanyo Electric Co Ltd | 半導体装置 |
| EP0772249A2 (en) * | 1995-11-06 | 1997-05-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| JPH10242512A (ja) * | 1997-02-24 | 1998-09-11 | Toshiba Corp | 半導体発光装置 |
| JPH11243251A (ja) * | 1998-02-26 | 1999-09-07 | Toshiba Corp | 半導体レーザ装置 |
| WO2000016411A1 (en) * | 1998-09-10 | 2000-03-23 | Rohm Co., Ltd. | Semiconductor light-emitting device and method for manufacturing the same |
| WO2001008229A1 (en) * | 1999-07-26 | 2001-02-01 | National Institute Of Advanced Industrial Science And Technology | ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF |
| JP2001068707A (ja) * | 1999-08-27 | 2001-03-16 | Univ Osaka | 導電性材料、導電性薄膜、複合膜、及び導電性材料の製造方法 |
| JP2001237460A (ja) * | 2000-02-23 | 2001-08-31 | Matsushita Electric Ind Co Ltd | 発光素子 |
| JP2002170993A (ja) * | 2000-11-30 | 2002-06-14 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法、可視光発光装置 |
| JP2002289918A (ja) * | 2001-03-26 | 2002-10-04 | Sharp Corp | ｐ型半導体結晶の製造方法および発光デバイス |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3658112B2 (ja) | 1995-11-06 | 2005-06-08 | 日亜化学工業株式会社 | 窒化物半導体レーザダイオード |
| JPH11168262A (ja) * | 1997-09-30 | 1999-06-22 | Canon Inc | 面型光デバイス、その製造方法、および表示装置 |
| JP4425376B2 (ja) | 1999-07-26 | 2010-03-03 | 独立行政法人産業技術総合研究所 | シリコン基板を用いたＺｎＯ系化合物半導体発光素子およびその製法 |
| JP4404995B2 (ja) | 1999-07-26 | 2010-01-27 | 独立行政法人産業技術総合研究所 | Ａ面サファイア基板を用いたＺｎＯ系化合物半導体発光素子およびその製法 |
-
2002
- 2002-07-23 TW TW091116314A patent/TW550839B/zh not_active IP Right Cessation
- 2002-07-24 US US10/484,408 patent/US6982438B2/en not_active Expired - Fee Related
- 2002-07-24 CN CNB028135369A patent/CN100356590C/zh not_active Expired - Fee Related
- 2002-07-24 WO PCT/JP2002/007471 patent/WO2003030273A1/ja active Application Filing
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0992930A (ja) * | 1995-09-25 | 1997-04-04 | Sanyo Electric Co Ltd | 半導体装置 |
| EP0772249A2 (en) * | 1995-11-06 | 1997-05-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| JPH10242512A (ja) * | 1997-02-24 | 1998-09-11 | Toshiba Corp | 半導体発光装置 |
| JPH11243251A (ja) * | 1998-02-26 | 1999-09-07 | Toshiba Corp | 半導体レーザ装置 |
| WO2000016411A1 (en) * | 1998-09-10 | 2000-03-23 | Rohm Co., Ltd. | Semiconductor light-emitting device and method for manufacturing the same |
| WO2001008229A1 (en) * | 1999-07-26 | 2001-02-01 | National Institute Of Advanced Industrial Science And Technology | ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF |
| JP2001068707A (ja) * | 1999-08-27 | 2001-03-16 | Univ Osaka | 導電性材料、導電性薄膜、複合膜、及び導電性材料の製造方法 |
| JP2001237460A (ja) * | 2000-02-23 | 2001-08-31 | Matsushita Electric Ind Co Ltd | 発光素子 |
| JP2002170993A (ja) * | 2000-11-30 | 2002-06-14 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法、可視光発光装置 |
| JP2002289918A (ja) * | 2001-03-26 | 2002-10-04 | Sharp Corp | ｐ型半導体結晶の製造方法および発光デバイス |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7525128B2 (en) | 2004-05-14 | 2009-04-28 | Cermet, Inc. | Zinc-oxide-based double-heterostructure light-emitting diode |
| US8053755B2 (en) | 2004-09-17 | 2011-11-08 | Optogan Oy | Semiconductor heterostructure |
Also Published As
| Publication number | Publication date |
|---|---|
| TW550839B (en) | 2003-09-01 |
| CN1524299A (zh) | 2004-08-25 |
| CN100356590C (zh) | 2007-12-19 |
| US6982438B2 (en) | 2006-01-03 |
| US20040235212A1 (en) | 2004-11-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2003030273A1 (en) | Light emitting element and method for manufacture thereof | |
| DE69702929T3 (de) | Lichtemittierende vorrichtung und anzeigevorrichtung | |
| US7084436B2 (en) | Multi element, multi color solid state LED/laser | |
| EP1439586B1 (de) | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement | |
| DE102007058720A1 (de) | Reflexive Montagesubstrate für LEDs | |
| CN105428479B (zh) | 半导体发光元件 | |
| US7087931B2 (en) | High luminance indium gallium aluminum nitride light emitting device and manufacture method thereof | |
| CN106057997A (zh) | 一种黄绿光发光二极管的外延片及制备方法 | |
| CN109449192A (zh) | 一种oled显示基板和显示面板 | |
| DE102005041260A1 (de) | Wellenlängen-Konvertierungssubstanz und Licht emittierende Vorrichtung und einkapselndes Material, das gleiches aufweist | |
| CA2061349A1 (en) | Surface-normal optoelectronic fusion device | |
| JP2004200303A (ja) | 発光ダイオード | |
| EP0727827A3 (en) | Semiconductor light emitting element | |
| CN102931305A (zh) | 一种led芯片及其制备方法 | |
| KR100329054B1 (ko) | 반도체발광소자및그의제조방법 | |
| KR100910476B1 (ko) | 초격자구조의 활성층을 갖는 질화물 반도체 소자 | |
| KR20110123852A (ko) | 광투과 반도체 박막층을 가지는 유기 발광 다이오드 | |
| JPS59208888A (ja) | 化合物半導体発光素子 | |
| KR20170075408A (ko) | 발광 소자 | |
| KR20130027873A (ko) | 형광체 조성물 및 이를 포함하는 발광소자 패키지 | |
| JPS5771191A (en) | Photosemiconductor element | |
| KR102594206B1 (ko) | 반도체 소자 | |
| IT994398B (it) | Perfezionamento nei diodi emetti tori di luce per il funzionamento a bassa temperatura e a bassa tensione | |
| JPS56135985A (en) | A xga1-xas light emitting diode | |
| DE19754945B4 (de) | Optoelektronisches Bauelement für den infraroten Wellenlängenbereich mit halbleitendem Rhuteniumsilizid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): AU CA CN ID IN KR NZ |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FR GB GR IE IT LU MC NL PT SE SK TR |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| WWE | Wipo information: entry into national phase |
Ref document number: 20028135369 Country of ref document: CN |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 10484408 Country of ref document: US |
|
| 122 | Ep: pct application non-entry in european phase |