WO2003001600A3 - Speicherzelle, speicherzellenanordnung und herstellungsverfahren - Google Patents
Speicherzelle, speicherzellenanordnung und herstellungsverfahren Download PDFInfo
- Publication number
- WO2003001600A3 WO2003001600A3 PCT/DE2002/002141 DE0202141W WO03001600A3 WO 2003001600 A3 WO2003001600 A3 WO 2003001600A3 DE 0202141 W DE0202141 W DE 0202141W WO 03001600 A3 WO03001600 A3 WO 03001600A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- memory cell
- producing
- same
- silicide
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 abstract 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical group [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract 1
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037016748A KR100629383B1 (ko) | 2001-06-21 | 2002-06-12 | 메모리 셀, 메모리 셀을 포함하는 장치 및 메모리 셀 제조 방법 |
EP02742805A EP1399972A2 (de) | 2001-06-21 | 2002-06-12 | Speicherzelle, speicherzellenanordnung und herstellungsverfahren |
JP2003507893A JP3976729B2 (ja) | 2001-06-21 | 2002-06-12 | メモリセル、メモリセル構成、および製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10129958.3 | 2001-06-21 | ||
DE10129958A DE10129958B4 (de) | 2001-06-21 | 2001-06-21 | Speicherzellenanordnung und Herstellungsverfahren |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003001600A2 WO2003001600A2 (de) | 2003-01-03 |
WO2003001600A3 true WO2003001600A3 (de) | 2003-08-21 |
Family
ID=7688966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/002141 WO2003001600A2 (de) | 2001-06-21 | 2002-06-12 | Speicherzelle, speicherzellenanordnung und herstellungsverfahren |
Country Status (8)
Country | Link |
---|---|
US (2) | US6548861B2 (de) |
EP (1) | EP1399972A2 (de) |
JP (1) | JP3976729B2 (de) |
KR (1) | KR100629383B1 (de) |
CN (1) | CN100524774C (de) |
DE (1) | DE10129958B4 (de) |
TW (1) | TW567612B (de) |
WO (1) | WO2003001600A2 (de) |
Families Citing this family (73)
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US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6700818B2 (en) | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
DE10225410A1 (de) | 2002-06-07 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Herstellung von NROM-Speicherzellen mit Grabentransistoren |
US6777725B2 (en) * | 2002-06-14 | 2004-08-17 | Ingentix Gmbh & Co. Kg | NROM memory circuit with recessed bitline |
DE10226964A1 (de) * | 2002-06-17 | 2004-01-08 | Infineon Technologies Ag | Verfahren zur Herstellung einer NROM-Speicherzellenanordnung |
DE10229065A1 (de) * | 2002-06-28 | 2004-01-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines NROM-Speicherzellenfeldes |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
DE10232938B4 (de) * | 2002-07-19 | 2005-05-04 | Infineon Technologies Ag | Verfahren zur Herstellung einer vergrabenen Bitleitung für einen Halbleiterspeicher |
KR100468771B1 (ko) * | 2002-10-10 | 2005-01-29 | 삼성전자주식회사 | 모스 트랜지스터의 제조방법 |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
CN100405598C (zh) | 2002-11-12 | 2008-07-23 | 微米技术有限公司 | 用于减少cmos图像传感器中的暗电流的接地栅极和隔离技术 |
US6888214B2 (en) * | 2002-11-12 | 2005-05-03 | Micron Technology, Inc. | Isolation techniques for reducing dark current in CMOS image sensors |
TW575945B (en) * | 2002-12-17 | 2004-02-11 | Nanya Technology Corp | Method for fabricating a vertical NROM cell |
KR100463184B1 (ko) * | 2003-01-30 | 2004-12-23 | 아남반도체 주식회사 | 비휘발성 메모리 장치 제조 방법 |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
US7142464B2 (en) | 2003-04-29 | 2006-11-28 | Saifun Semiconductors Ltd. | Apparatus and methods for multi-level sensing in a memory array |
DE10324550B4 (de) * | 2003-05-30 | 2006-10-19 | Infineon Technologies Ag | Herstellungsverfahren für eine NROM-Halbleiterspeichervorrichtung |
US7123532B2 (en) | 2003-09-16 | 2006-10-17 | Saifun Semiconductors Ltd. | Operating array cells with matched reference cells |
US6965143B2 (en) * | 2003-10-10 | 2005-11-15 | Advanced Micro Devices, Inc. | Recess channel flash architecture for reduced short channel effect |
JP4334315B2 (ja) * | 2003-10-10 | 2009-09-30 | 株式会社ルネサステクノロジ | 半導体記憶装置の製造方法 |
US7067362B2 (en) * | 2003-10-17 | 2006-06-27 | Chartered Semiconductor Manufacturing Ltd. | Integrated circuit with protected implantation profiles and method for the formation thereof |
US7050330B2 (en) * | 2003-12-16 | 2006-05-23 | Micron Technology, Inc. | Multi-state NROM device |
US20050251617A1 (en) * | 2004-05-07 | 2005-11-10 | Sinclair Alan W | Hybrid non-volatile memory system |
KR100593599B1 (ko) * | 2003-12-30 | 2006-06-28 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7041545B2 (en) * | 2004-03-08 | 2006-05-09 | Infineon Technologies Ag | Method for producing semiconductor memory devices and integrated memory device |
JP2005277171A (ja) * | 2004-03-25 | 2005-10-06 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4377751B2 (ja) * | 2004-06-10 | 2009-12-02 | シャープ株式会社 | クロスポイント構造の半導体記憶装置及びその製造方法 |
US7317633B2 (en) | 2004-07-06 | 2008-01-08 | Saifun Semiconductors Ltd | Protection of NROM devices from charge damage |
US7095655B2 (en) | 2004-08-12 | 2006-08-22 | Saifun Semiconductors Ltd. | Dynamic matching of signal path and reference path for sensing |
US7279770B2 (en) * | 2004-08-26 | 2007-10-09 | Micron Technology, Inc. | Isolation techniques for reducing dark current in CMOS image sensors |
KR100709823B1 (ko) * | 2004-08-26 | 2007-04-23 | 주식회사 케이이씨 | 트렌치형 전계효과트랜지스터 및 그 제조 방법 |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US7535765B2 (en) | 2004-12-09 | 2009-05-19 | Saifun Semiconductors Ltd. | Non-volatile memory device and method for reading cells |
KR100630725B1 (ko) * | 2004-12-17 | 2006-10-02 | 삼성전자주식회사 | 매립된 비트라인을 가진 반도체 소자 및 그 제조방법 |
EP1686592A3 (de) | 2005-01-19 | 2007-04-25 | Saifun Semiconductors Ltd. | Teil-Löschüberprüfung |
US7186607B2 (en) * | 2005-02-18 | 2007-03-06 | Infineon Technologies Ag | Charge-trapping memory device and method for production |
US7365382B2 (en) * | 2005-02-28 | 2008-04-29 | Infineon Technologies Ag | Semiconductor memory having charge trapping memory cells and fabrication method thereof |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
US20060223267A1 (en) * | 2005-03-31 | 2006-10-05 | Stefan Machill | Method of production of charge-trapping memory devices |
KR100715228B1 (ko) * | 2005-06-18 | 2007-05-04 | 삼성전자주식회사 | 곡면 구조를 갖는 소노스 메모리 소자 및 그 제조방법 |
US8338887B2 (en) * | 2005-07-06 | 2012-12-25 | Infineon Technologies Ag | Buried gate transistor |
US7399673B2 (en) * | 2005-07-08 | 2008-07-15 | Infineon Technologies Ag | Method of forming a charge-trapping memory device |
US7804126B2 (en) | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7468299B2 (en) * | 2005-08-04 | 2008-12-23 | Macronix International Co., Ltd. | Non-volatile memory cells and methods of manufacturing the same |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US8116142B2 (en) * | 2005-09-06 | 2012-02-14 | Infineon Technologies Ag | Method and circuit for erasing a non-volatile memory cell |
US7221138B2 (en) | 2005-09-27 | 2007-05-22 | Saifun Semiconductors Ltd | Method and apparatus for measuring charge pump output current |
US7352627B2 (en) | 2006-01-03 | 2008-04-01 | Saifon Semiconductors Ltd. | Method, system, and circuit for operating a non-volatile memory array |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US9159568B2 (en) * | 2006-02-04 | 2015-10-13 | Cypress Semiconductor Corporation | Method for fabricating memory cells having split charge storage nodes |
KR100762636B1 (ko) | 2006-02-14 | 2007-10-01 | 삼성전자주식회사 | 네트워크 단말의 음성 검출 제어 시스템 및 방법 |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7638835B2 (en) | 2006-02-28 | 2009-12-29 | Saifun Semiconductors Ltd. | Double density NROM with nitride strips (DDNS) |
KR100732304B1 (ko) * | 2006-03-23 | 2007-06-25 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조 방법 |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US20070257293A1 (en) * | 2006-05-08 | 2007-11-08 | Josef Willer | Semiconductor memory device and method for production of the semiconductor memory device |
KR100739532B1 (ko) * | 2006-06-09 | 2007-07-13 | 삼성전자주식회사 | 매몰 비트라인 형성 방법 |
US7605579B2 (en) | 2006-09-18 | 2009-10-20 | Saifun Semiconductors Ltd. | Measuring and controlling current consumption and output current of charge pumps |
WO2008072692A1 (ja) | 2006-12-15 | 2008-06-19 | Nec Corporation | 不揮発性記憶装置及びその製造方法 |
US7859050B2 (en) * | 2007-01-22 | 2010-12-28 | Micron Technology, Inc. | Memory having a vertical access device |
JP2008192803A (ja) * | 2007-02-05 | 2008-08-21 | Spansion Llc | 半導体装置およびその製造方法 |
DE102007038925A1 (de) * | 2007-08-17 | 2009-02-19 | Qimonda Ag | Verfahren zum Herstellen einer aktiven Vorrichtung einer Halbleiterspeichervorrichtung, und eine Halbleiterspeichervorrichtung |
US7778073B2 (en) * | 2007-10-15 | 2010-08-17 | Qimonda Ag | Integrated circuit having NAND memory cell strings |
KR20100106017A (ko) * | 2009-03-23 | 2010-10-01 | 삼성전자주식회사 | 리세스 채널 트랜지스터 및 이의 제조 방법 |
WO2011142850A2 (en) | 2010-01-22 | 2011-11-17 | The Regents Of The University Of California | Etchant-free methods of producing a gap between two layers, and devices produced thereby |
US8999769B2 (en) * | 2012-07-18 | 2015-04-07 | Globalfoundries Singapore Pte. Ltd. | Integration of high voltage trench transistor with low voltage CMOS transistor |
US9054133B2 (en) | 2011-09-21 | 2015-06-09 | Globalfoundries Singapore Pte. Ltd. | High voltage trench transistor |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
JPH0412573A (ja) * | 1990-05-02 | 1992-01-17 | Matsushita Electron Corp | 不揮発性半導体記憶装置およびその製造方法 |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US5392237A (en) * | 1992-09-25 | 1995-02-21 | Rohm Co., Ltd. | Semiconductor memory device with EEPROM in trench with polysilicon/metal contacting to source and drain in virtual ground type array |
EP0967654A1 (de) * | 1998-06-26 | 1999-12-29 | EM Microelectronic-Marin SA | Nichtflüchtiges Halbleiterspeicherbauelement |
US6127226A (en) * | 1997-12-22 | 2000-10-03 | Taiwan Semiconductor Manufacturing Company | Method for forming vertical channel flash memory cell using P/N junction isolation |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3167457B2 (ja) * | 1992-10-22 | 2001-05-21 | 株式会社東芝 | 半導体装置 |
DE19545903C2 (de) * | 1995-12-08 | 1997-09-18 | Siemens Ag | Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung |
DE19600423C2 (de) * | 1996-01-08 | 2001-07-05 | Siemens Ag | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung |
US5894149A (en) * | 1996-04-11 | 1999-04-13 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having high breakdown voltage and method of manufacturing the same |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
DE19638439C2 (de) * | 1996-09-19 | 2000-06-15 | Siemens Ag | Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement und Herstellungsverfahren |
JP3641103B2 (ja) | 1997-06-27 | 2005-04-20 | 株式会社東芝 | 不揮発性半導体メモリ装置の製造方法 |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6013551A (en) * | 1997-09-26 | 2000-01-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby |
US6124608A (en) * | 1997-12-18 | 2000-09-26 | Advanced Micro Devices, Inc. | Non-volatile trench semiconductor device having a shallow drain region |
US6215148B1 (en) | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
JP3223885B2 (ja) * | 1998-08-17 | 2001-10-29 | 日本電気株式会社 | 電界効果型半導体メモリ装置およびその製造方法 |
US6194741B1 (en) * | 1998-11-03 | 2001-02-27 | International Rectifier Corp. | MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance |
US6204529B1 (en) * | 1999-08-27 | 2001-03-20 | Hsing Lan Lung | 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
US6376315B1 (en) * | 2000-03-31 | 2002-04-23 | General Semiconductor, Inc. | Method of forming a trench DMOS having reduced threshold voltage |
DE10039441A1 (de) | 2000-08-11 | 2002-02-28 | Infineon Technologies Ag | Speicherzelle, Speicherzellenanordnung und Herstellungsverfahren |
US6445037B1 (en) * | 2000-09-28 | 2002-09-03 | General Semiconductor, Inc. | Trench DMOS transistor having lightly doped source structure |
-
2001
- 2001-06-21 DE DE10129958A patent/DE10129958B4/de not_active Expired - Fee Related
- 2001-07-06 US US09/900,649 patent/US6548861B2/en not_active Expired - Lifetime
-
2002
- 2002-06-12 KR KR1020037016748A patent/KR100629383B1/ko not_active Expired - Fee Related
- 2002-06-12 JP JP2003507893A patent/JP3976729B2/ja not_active Expired - Fee Related
- 2002-06-12 CN CNB028125134A patent/CN100524774C/zh not_active Expired - Fee Related
- 2002-06-12 WO PCT/DE2002/002141 patent/WO2003001600A2/de active Application Filing
- 2002-06-12 EP EP02742805A patent/EP1399972A2/de not_active Withdrawn
- 2002-06-17 TW TW091113148A patent/TW567612B/zh not_active IP Right Cessation
-
2003
- 2003-02-28 US US10/378,101 patent/US6794249B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3731163A (en) * | 1972-03-22 | 1973-05-01 | United Aircraft Corp | Low voltage charge storage memory element |
US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
JPH0412573A (ja) * | 1990-05-02 | 1992-01-17 | Matsushita Electron Corp | 不揮発性半導体記憶装置およびその製造方法 |
US5392237A (en) * | 1992-09-25 | 1995-02-21 | Rohm Co., Ltd. | Semiconductor memory device with EEPROM in trench with polysilicon/metal contacting to source and drain in virtual ground type array |
US6127226A (en) * | 1997-12-22 | 2000-10-03 | Taiwan Semiconductor Manufacturing Company | Method for forming vertical channel flash memory cell using P/N junction isolation |
EP0967654A1 (de) * | 1998-06-26 | 1999-12-29 | EM Microelectronic-Marin SA | Nichtflüchtiges Halbleiterspeicherbauelement |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 016, no. 162 (E - 1192) 20 April 1992 (1992-04-20) * |
Also Published As
Publication number | Publication date |
---|---|
WO2003001600A2 (de) | 2003-01-03 |
US20030151091A1 (en) | 2003-08-14 |
US20030006428A1 (en) | 2003-01-09 |
CN1526170A (zh) | 2004-09-01 |
US6794249B2 (en) | 2004-09-21 |
KR20040007749A (ko) | 2004-01-24 |
US6548861B2 (en) | 2003-04-15 |
DE10129958A1 (de) | 2003-01-09 |
DE10129958B4 (de) | 2006-07-13 |
JP3976729B2 (ja) | 2007-09-19 |
KR100629383B1 (ko) | 2006-09-29 |
JP2004531084A (ja) | 2004-10-07 |
TW567612B (en) | 2003-12-21 |
CN100524774C (zh) | 2009-08-05 |
EP1399972A2 (de) | 2004-03-24 |
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