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WO2003061860A1 - Traitements de fluides supercritiques par des techniques megasoniques - Google Patents

Traitements de fluides supercritiques par des techniques megasoniques Download PDF

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Publication number
WO2003061860A1
WO2003061860A1 PCT/US2003/002113 US0302113W WO03061860A1 WO 2003061860 A1 WO2003061860 A1 WO 2003061860A1 US 0302113 W US0302113 W US 0302113W WO 03061860 A1 WO03061860 A1 WO 03061860A1
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WO
WIPO (PCT)
Prior art keywords
wafer
cleaning
transducer
fluid
chamber
Prior art date
Application number
PCT/US2003/002113
Other languages
English (en)
Inventor
Laura B. Rothman
Raymond J. Robey
Rick White
David J. Mount
Robert B. Farmer
Keith Pope
Original Assignee
S. C. Fluids Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S. C. Fluids Inc. filed Critical S. C. Fluids Inc.
Publication of WO2003061860A1 publication Critical patent/WO2003061860A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids

Definitions

  • This invention relates to apparatus and processes for cleaning residual matter, photoresist and other foreign materials off wafers, substrates and other work pieces including photomasks, compact discs, flat panel displays, and in particular, to cleaning semiconductor wafers, using acoustic wave techniques including megasonics in conjunction with supercritical fluid soaking, rapid decompression, flushing, and related process mechanisms to enhance the cleaning capability and remove submicron particles.
  • Ultrasonic acoustical techniques in unpressurized liquid baths have been used. Ultrasonics causes damage to the microstructures on the semiconductor surface due to cavitation. Calculations done by Spall et al. for turbulent flow of supercritical phase carbon dioxide to remove particles from a semiconductor wafer indicate that extremely high velocities are required, ⁇ 200cm/s for particles 0.1 micron in diameter. High velocities are needed apparently due to the formation of a boundary layer near the surface. Within this boundary layer, there is a shear in the velocity field leading to a stress which rolls particles away from any given position. The wall shear in case of turbulent flow is much greater than in laminar flow.
  • the boundary layer In laminar flow, the boundary layer is relatively thicker, allowing the velocity to change gradually to its stream value. In case of turbulent flow, the viscous sublayer which develops right next to the wall is much thinner, causing a more abrupt change in the velocity field, thereby setting up a larger wall shear.
  • Adhesion forces between a particle and a surface vary linearly with the particle diameter. Removal forces vary as the second power of the particle size. Therefore particle removal becomes more difficult as the particle size decreases.
  • the lift force depends inversely on fluid viscosity, favoring supercritical fluid processes. For the drag force a higher viscosity is preferred, which is not favorable for supercritical fluid processes. However the boundary layer thickness would be much thinner.
  • Van der Waals forces have 3 components - interactions between permanent dipoles (van der Waals-Keesom force), interaction between permanent dipoles and induced dipoles (van der Waals-Debye force) and interactions between induced dipoles (van der Waals-London force).
  • Fdbl electric double layer force - dominates for small particles ( ⁇ 5microns).
  • a surface contact potential is created between two different materials based upon each material's respective local energy state. Resulting surface charge buildup needed to preserve charge neutrality sets up a double layer charge region which creates the electrostatic attraction.
  • F lift lift force - the lower flow at the bottom of the particle relative to the velocity of flow at the top of the particle results in a lifting force, tending to apply a force in the normal direction to the surface.
  • the magnitude of the lift force will depend on the nature of the near-surface flow.
  • ultrasonics and “megasonics” refer here to the generation and transmitting of acoustical wave patterns into a medium as a means of providing or enhancing a cleaning process.
  • Transducer arrays used for this purpose are well known in the art.
  • the difference between ultrasonics and megasonics in this context is the frequency at which the acoustic wave pattern is generated.
  • Ultrasonics is understood in the industry to span frequencies of 20-350 KHz, and is associated in cleaning applications with producing random cavitation.
  • Megasonics refers to a higher frequency band, 700- 1000 KHz, and is associated for cleaning purposes with offering minimal, controlled cavitation and frontal cleaning action.
  • Part of the intent of the soak is that the high pressure permeate the surface of the residue to a depth that upon rapid decompression of the chamber will provoke a physical rendering of at least a surface layer of the weakened residue, as has been described in related application PCT US01/15999, published on or about Nov. 18, 2001, which is incorporated herein by reference.
  • the flush step may incorporate or be followed by an increase in pressure, gradual or pulsed, to the higher supercritical pressure, and above steps repeated, if continued or additional cleaning action is desired.
  • the megasonics transducer array is preferably operated continually during the cleaning cycle, and may be operated or modulated intermittently or intersegmentally in any of phase, power level, frequency, and on-off switching modes, with selected or varied proximity to the surface of the substrate, all as may optimize the additional effects of the megasonics action on the cleaning process.
  • an important aspect of this invention is the combination of the cycle of high pressure soak, rapid decompression, and flush, and the megasonics action.
  • the prior art of megasonics there is mention of pulsing but it has to do with pulsing the input power to the transducer, nothing to do with a change in total pressure.
  • the combination of the process mechanisms described here has a dramatic further effect for cleaning and removing particles in the submicron range.
  • the apparatus of the present invention there is included the capability to alter the chamber environment between the liquid, gas and supercritical states, to apply megasonic action to the wafer in the supercritical fluid phase, and to control the formation of bubbles and pressure wave propagation in the supercritical fluid mixture to greatest advantage for improved cleaning of submicron particles.
  • This disclosure describes the process and apparatus for precision cleaning of surfaces, including removal of photoresist and etch residue from semiconductor wafers, post CMP (chemical mechanical polishing) cleaning, photomask cleaning, bare Silicon wafer cleaning, flat panel displays cleaning, ceramic substrate cleaning, and hard disk drives cleaning, etc.
  • Fig. 1 is a cross section view of the inverted process vessel of the first embodiment having a wafer pedestal in the underside lid and a large surface area transducer array mounted in the ceiling of the process chamber, configured around a centerpoint fluid spray nozzle.
  • Fig. 2 is an underside view upward into the inverted process chamber of the first embodiment, looking at the transducer array of Fig. 1 with a single port fluid spray nozzle disposed at the center of the chamber.
  • Fig. 3 is an underside view upward into the inverted process chamber of the second embodiment, looking at a multi-segment transducer array configured around a multi-port fluid spray nozzle disposed at the centerpoint.
  • Fig. 4 is an underside view upward into the inverted process chamber of the third embodiment, looking at a multi-segment transducer array configured around the single port fluid spray nozzle
  • Fig. 5 is an underside view upward into the inverted process chamber of an embodiment similar to that of Fig. 1, illustrating a large area, multi-segment transducer checkerboard array of square segments, occupying less than all the ceiling area of the chamber, where the wafer pedestal has rotational capability for providing full surface area exposure of the wafer to the transducer array.
  • Fig. 6 is a cross section view of the inverted process vessel of a fourth embodiment having a wafer pedestal in the underside lid and a multi-segment perimeter transducer array symmetrically disposed around perimeter fluid inlets and outlets.
  • Fig. 7 is an underside view upward into the inverted process chamber of the fourth embodiment, looking at the multi-segment perimeter transducer array, and illustrating the overlapping transmission pattern of the inlet side transducers across the process chamber.
  • Fig. 8 is a cross section view of an embodiment having a perimeter based wafer support mechanism for holding and exposing the underside of wafers to the side mounted transducer arrays and underside horizontal fluid flow.
  • Fig. 9 is a cross section view of another embodiment having an underside large area transducer array and center nozzle, and a ceiling side shaft mounted rotatable wafer support mechanism for holding and exposing the underside of a wafer to the transducer array, where fluid flow is vertically upward through the center nozzle and radially out to outlet ports on the side of vessel.
  • the wafer or substrate is immersed in a mixture of supercritical fluid and appropriate co-solvent.
  • co-solvent will depend upon the materials to be cleaned from the surfaced of the substrate.
  • a suitable surfactant can also be added.
  • a high pressure soaking period will allow the supercritical carbon dioxide and co-solvent to penetrate the materials to be removed. Swelling of these materials will occur along with a debonding of them from the surface of the substrate.
  • the high pressure will permeate the material as well, setting the stage for the rapid decompression pulse. At this point the megasonic transducers will be activated and the controlled rapid depressurization of the system to a lower supercritical phase pressure.
  • the continuous pattern of shock waves and acoustic streaming pattern generated by the large surface area megasonics transducer array enhances the breakup and delaminating of the photoresist from the substrate.
  • the acoustic streaming also transfers momentum to fine particles and facilitates their transport off the substrate surface. Coupled with the acoustic streaming action is the rapid outflow of fluid over the substrate surface, applying further removing force to the loose particles.
  • the combination of the megasonics and the rapid decompression and fluid outflow mechanisms applied in a medium of supercritical carbon dioxide and co solvent provides a significant advantage over other cleaning methods for separating the unwanted films from the surface of the substrate along with submicron particles.
  • clean supercritical phase carbon dioxide is then flowed over the surface and the chamber flushed to carry away the unwanted debris.
  • the megasonics transducer array is deactivated and the process vessel is returned to atmospheric pressure and the substrate unloaded.
  • Supercritical carbon dioxide is itself an excellent solvent for non-polar materials.
  • a high pressure soak to swell and weaken the polymer materials at high pressure, followed by a rapid depressurization to debond and delaminate the swollen and weakened polymer from the surface.
  • Megasonics action in the supercritical fluid medium to provide turbulence and energy to enhance the soaking and swelling process; the rendering process during decompression and flushing; and the moving of the loose and broken polymer particles off of the surface of the substrate.
  • Unique aspects of the apparatus include the incorporation of the megasonics transducers or multi-segment transducer arrays of significant surface area within the pressure vessel for enhancing the other removal forces or mechanisms; optional rotation or alternate orientation of the wafer or substrate with respect to the transducers for a more distributed megasonics effect on the wafer surface, and through-chamber flow control of the supercritical carbon dioxide for using flow velocity to reinforce the other removal forces.
  • Using megasonics action in combination with supercritical fluid cleaning techniques including high pressure soak and very rapid decompressive pulse cycles allows for faster process times and removal of smaller particles from surfaces with less damage to microstructures.
  • Process conditions for cleaning 200 - 300 mm wafers include the following preferences:
  • Carbon dioxide (CO2) is the preferred process gas for reasons well understood in the industry, although the invention is inclusive of other suitable fluids.
  • Co-solvents are chosen based on the selection of process gas and the chemistry of the material(s) to be removed/cleaned.
  • Initial chamber pressure is at least 5000 psi; temperature is 80 C degree.
  • a sufficient soak period is required, generally the longer the better up to the limits of an acceptable total cycle time. A two minute soak is used in the preferred embodiment.
  • a useful alternative is to conduct the depressurization pulse step so as to bring the chamber to a condition of higher density of the supercritical mixture, at relatively lower temperature, where megasonics transducer action is more pronounced due to the higher density and acoustic streaming velocity
  • the actual process will depend upon the material(s) being removed.
  • the first preferred embodiment described is representative for photoresist removal.
  • the alternative described above is more representative for residue removal.
  • a third alternative described below would be used for submicron particle removal.
  • FIGs. 1 and 2 there is shown the inverted pressure vessel 10 and process chamber of a first embodiment apparatus, shown in an open condition with a stationary inverted chamber section 12 above a vertically movable lid section 14.
  • the lid section is vertically adjustable between a lower open position and a raised, closed position.
  • the lid section 14 includes a load/unload pedestal 16 piercing a lower heated platen 18, where individual wafers 1 are placed and removed sequentially for processing, robotically for example.
  • the pedestal 16 is vertically movable within the lid section 14, and may be moved concurrently with the lid section 14 to correctly position the wafer on the lid platen as the lid section 14 is closing to the chamber section 12.
  • a pedestal rotating mechanism 17 provides means for rotating the wafer in either or alternately in both directions for enhanced and more uniform cleaning effect.
  • lid, wafer pedestal, and chamber movement is relative; that the inverted chamber may be fixed and the lid moved vertically, or vice versa, or both be vertically movable, in order to achieve closure.
  • Fig. 2 looking upward into the inverted chamber section 12 in this embodiment, it is seen to be configured with a ceiling mounted, downward directed, full disc megasonics transducer 30, with center hole 32 which accommodates a fluid supply nozzle 20, which is supplied by CO2 fluid supply feedthrough 22 from an external source.
  • the chamber section is also configured with sealed electrical supply feedthroughs 34 to power the transducer 30.
  • the chamber has sufficient head space below the transducer to accommodate a wafer when the underside cover section 14 is raised to a closed position, plus further spacing above the wafer sufficient for the radial flow of CO2 over the wafer surface through the chamber volume from center to edge, to the CO2 fluid return outlets 24.
  • the lower heating platen 18 of the lid section is a heat exchanger connected to an external source through connections 19 for providing heating and cooling capability to the wafer and the chamber in general.
  • the inverted chamber section 12 may be similarly equipped, for additional chamber general heating/cooling control and/or for cooling the transducer. Other or additional means of heating the platen, such as electrical, are within the scope of the invention.
  • Liquid and supercritical CO2, as well as co-solvent and surfactant, are selectively available to the chamber as required from a supply/support system such as previously described by this Applicant in prior applications.
  • Inflow of the CO2 mixture through the chamber is downward and then radial, over the wafer surface.
  • the megasonics action is applied from just above the surface of the wafer.
  • the very rapid decompression and flow of CO2 onto and over the wafer, coupled with the megasonics action loosens and pushes debris and particles off the wafer surface and out of the process chamber. Separator vessels catch particles and co-solvent.
  • the CO2 is either exhausted or recycled.
  • FIG. 3 there is shown an alternative embodiment to the Fig. 2 ceiling mounted transducer 30.
  • An inverted chamber section 12 is in this embodiment configured with four semicircular, ceiling mounted, downward directed, transducer array sections 40 arranged about a multi-port, heated fluid nozzle 42.
  • the array sections 40 and heated nozzle 42 are supplied by electrical supply feedthroughs, a CO2 fluid supply, and heating fluid feedthroughs (not shown in this view) similar those of the Figs. 1 & 2 embodiment.
  • the chamber has sufficient head space below the transducer to accommodate a wafer when the underside cover is raised to a closed position, plus further spacing above the wafer sufficient for the radial flow of CO2 over the wafer through the chamber from center to edge, to the CO2 fluid return outlets.
  • Each megasonics array section 40 is separately powered, and all are controlled by a common controller such that sequencing of power levels, alternating current phase, and on-off switching can be accomplished for heat control of the array segments or sections, and/or any desired process effects.
  • the inverted chamber section 12 in this embodiment is configured with four pie-shaped, ceiling mounted, downward directed, transducer array sections 50 arranged about a fluid supply center nozzle 52.
  • the vessel is also configured with a CO2 fluid supply feedthrough for the nozzle and sealed electrical supply feedthroughs to power the transducer (not shown in this view) similar to Fig. 1.
  • the chamber has sufficient head space below the transducer to accommodate a wafer when the underside cover is raised to a closed position, plus further spacing above the wafer sufficient for the radial flow of CO2 over the wafer through the chamber from center to edge, to the CO2 fluid return outlets.
  • the array sections 50 are separately wired and controllable for coordinated operation similarly to the array sections 40 of Fig. 3.
  • the additional capability to rotate the wafer during the cleaning process similar to the pedestal rotating mechanism 17 of Fig. 1.
  • Means for rotating the wafer may be other than mechanical.
  • a portion of the through-flow of fluid through the chamber, for example, may be directed to rotating the wafer and/or wafer support.
  • the rotation of the wafer enhances the uniformity of the process and applies additional forces to help remove residue and particles from the surface.
  • the wafer rotation capability can be incorporated with any of the embodiments described herein. Referring to Fig. 5, there is shown still yet another alternative to the transducer array of the prior embodiments.
  • the inverted chamber section 12 in this embodiment is configured with a dual checkerboard array of square, multi-segment, ceiling mounted, downward directed, transducer array sections 60 arranged diagonally so as to occupy two opposing quadrants of the ceiling surface area, spanning the chamber corner to corner. In the remaining pair of opposing quadrants of the ceiling, there are disposed two fluid supply nozzles 62, directed at an angle so as to strike and sweep the wafer surface beneath an adjacent array section 60.
  • This chamber embodiment is coupled with wafer rotation capability such that the entire wafer surface is exposed to the dual effects of the fluid spray and the megasonics action, in addition to the other mechanisms of the cleaning process.
  • the wafer rotation may be accomplished by the pressure of the fluid spray directed from nozzles 62 against the wafer or wafer support assembly, or by other fluid flow dynamics within the vessel such as the through flow of Figs. 5 and 6.
  • the vessel of this embodiment is also configured with C02 fluid supply feedthroughs for the nozzles and sealed electrical supply feedthroughs to power the transducers.
  • the chamber has sufficient head space below the transducers to accommodate a wafer when the underside cover is raised to a closed position, plus further spacing above the wafer sufficient for the sprayed fluid and subsequent radial flow of CO2 over the wafer through the chamber from center to edge, to the CO2 fluid return outlets.
  • the segments of array sections 60 are wired and controllable similarly to the array sections of prior embodiments. The size of the segments can be optimized for cost and performance.
  • a variation of this embodiment is having each of the two checkerboard arrangements of array segments divided into the equivalent of a set of "red” segments and a set of "black” segments such that each set consists of only diagonally adjacent segments. This permits switching of power between the two sets for better heat and power management of the array.
  • the two arrays 60 can be alternated in operation, wafer rotation providing for a uniform effect on the wafer in either case.
  • a further variation of this and other multi segment transducer array embodiments provides that megasonic transducer segments and other than megasonic transducer segments such as ultrasonic are interspersed in the array, providing a dual-frequency range sonic action capability to the pressure vessel.
  • FIG. 6 and 7 there is shown the inverted pressure vessel and process chamber 70 of a fourth embodiment apparatus, shown in an open condition with a stationary inverted chamber section 72 above a vertically movable lid section 74.
  • the lid section is vertically adjustable between a lower open position and a raised, closed position.
  • the lid section includes a load/unload pedestal 76, where individual wafers 1 are placed and removed sequentially for processing, robotically for example.
  • the pedestal shaft pierces a lower heated platen 78. Platen 78 is supported by heating liquid feedthrough lines 79 for controlling heating and cooling within the chamber.
  • the pedestal is vertically movable within the lid section, and may be moved concurrently with the lid section to correctly position the wafer on the lid platen as the lid is closing to the chamber.
  • the inverted chamber in this embodiment is configured with a ceiling mounted upper heated platen 80 supported by heating liquid feedthrough lines 82, and with a CO2 process fluid inlet 84 on one side and an opposing side process fluid outlet 86.
  • the opposing inlet and outlet provide for a directional flow of process fluid over the top of the wafer and across the diameter of chamber.
  • Supplemental outlets 87 in lid section 74 provide for low side full drainage, including underside and heavier particles.
  • this first pair of transducers provides for the propagation of megasonic streaming action generated by the first pair of transducers to be aligned with the fluid flow so as to attain the highest combined removal force from these two mechanisms in one direction across the wafer surface. Wafer rotation is preferably incorporated into this embodiment.
  • the process fluid supply/support system is configured for bi-directional, alternating fluid flows between inlet 84 and outlet 86, referred to here as the fifth embodiment, then the second pair of transducers 90 is disposed around outlet 86, for supplying a megasonic streaming action in the reverse direction coinciding with the reverse direction fluid flow.
  • the vessel is also configured with sealed electrical supply feedthroughs 92 to power and control transducer sections 90 as in other embodiments.
  • the chamber has sufficient head space to accommodate a wafer between the upper and lower heated platens when the underside cover is raised to a closed position, plus further spacing above the wafer sufficient for the cross chamber flow of the CO2 mixture over the wafer.
  • Supercritical CO2, as well as co-solvent and surfactant, are selectively available to the chamber as required from a supply/support system such as previously described by this Applicant. Forward flow of the CO2 mixture through the chamber is through the side inlet 84, over the wafer surface and out the outlet 86. There may be vanes or other flow control mechanisms incorporated into the chamber designs, as have been described in other of the Applicant's patent disclosures, to provide for improved distribution of the fluid flow across the wafer surface.
  • the megasonics action is applied from both sides of the inlet 84 source of process fluid for forward flow, or the outlet 86 source of process fluid if in a reverse flow, or in an alternating basis in a bi-directional flow pattern, as to align the megasonics streaming action with the fluid flow.
  • the CO2 is either exhausted or recycled.
  • the inflow of the CO2 mixture through the chamber is downward through a ceiling mounted nozzle or nozzle array and then radially outward, over the wafer surface to outlets on the side of the vessel similar to the embodiment of Figs. 1 and 2.
  • the megasonic transducers are two pairs of semicircular, wall mounted, radially inward directed megasonics transducers positioned on each side of the two CO2 fluid outlets, similar to the embodiment of Figs. 6 and 7.
  • Figs. 8 and 9 describe important variations to the above embodiments, applicable where the wafer has a preferred side, normally considered to be the top side, to which the maximum cleaning effort is to be directed.
  • the chamber is arranged right side up, as is distinguished from previous embodiments, and has a topside lid, but the wafer is turned upside down by a wafer transport device or robot and placed in the chamber with the preferred side down for cleaning, thus taking advantage of the force of gravity in addition to the other process mechanisms described herein for removing unwanted material from the wafer surface.
  • any of the side or full disk surface area or partial surface area sonic array designs previously described can be incorporated in the inverted wafer embodiment.
  • the large area arrays would, of course be configured on the floor of the chamber, directed upward towards the wafer surface.
  • the supercritical soak, very rapid decompression pulse, and flush cycle previously described is fully applicable to these sonic action embodiments.
  • Megasonics is the preferred sonic frequency range for the supercritical fluid processes, although ultrasonics with liquid phase processing is within the capability of the apparatus, as well.
  • vessel 100 has a lower chamber section 102 with heating platen 104 disposed across the bottom surface area, a perimeter fluid inlet 106 disposed at 180 degrees from a perimeter fluid outlet 108. Heating liquid through feed lines 105 support platen 104. A pair of perimeter transducers 112 are disposed around each of inlet 106 and outlet 108. Electrical throughfeeds 1 13 support each transducer 112. Perimeter wafer supports 110, preferably at least three, are distributed around the chamber circumference so as to support an upside down wafer 1 when deposited thereon by a wafer transport mechanism.
  • Lid section 120 is configured with edge seal 122, and is configured with heating platen 124 connected by heating liquid throughfeed lines 125 to a source of heating liquid, for heating the chamber and the wafer.
  • Fluid flow of the CO2 fluid is horizontal across the underside of the wafer from the inlet to the outlet, with bi-directional flow being available as described in prior embodiments. Sonic action is applied with the appropriate pair of transducers 112, to align streaming action with fluid flow as previously described.
  • vessel 200 has a lower chamber section 202 with multiple perimeter fluid outlets 206 disposed about the circumference of the chamber.
  • a large surface area megasonics transducer array 212 is disposed on the bottom of the chamber, directed upward, and supported by electric feedthrough lines 213.
  • a centerpoint fluid nozzle 208 pierces the transducer array, fed by fluid throughfeed line 209.
  • Upper shaft mounted rotatable wafer support system 210 having radially extending arms 21 1, preferably at least three, reaching to the chamber circumference so as to grip and support an upside down wafer over the transducer array when deposited therein by a wafer transport mechanism.
  • Lid section 220 is configured with edge seal 222, and is further configured with heating platen 224 connected by heating liquid throughfeed lines 225 to a source of heating liquid, for heating the chamber and the wafer. Fluid flow of the CO2 fluid is directed through centerpoint nozzle 208 and radially across the underside of the wafer from the center to the perimeter. Sonic action is applied as previously described.
  • Wafer support in the inverted wafer embodiments may be structurally connected to the lid or chamber sections via a perimeter based wafer support system similar to Fig. 8, rather than the shaft mounted system illustrated in Fig. 9. In either case, means for wafer rotation can be incorporated for the same reasons as previously described, such as by a ratable wafer edge support ring driven by fluid flow or other mechanical means.
  • the invention extends to a two sided embodiment of the invention configured for applying megasonics action and fluid flow to both sides of a wafer.
  • Upper and lower components of the vessel may be configured with nozzles and large area sonic arrays similar to any of Figs. 2, 3, 4, 5, while incorporating perimeter outlets similar to Fig 9.
  • a wafer perimeter support assembly fixed or ratable as is preferred, may extend from either the upper or lower component of the vessel. Rotational capability may be induced by direct fluid flow as in Fig. 5 or by upper or lower side mechanical means similar to Fig. 1.
  • An axial mounted wafer support system for cleaning both sides may have radial vanes extending from the center shaft and terminating in wafer perimeter support perches so as to permit effective cleaning action to the near side of the wafer.
  • the initial process will be substantially the same for each: i.e. pressurize the chamber to the desired supercritical CO2 pressure and temperature; add appropriate co- solvent and/or surfactant if desired, and soak the substrate or wafer in this high pressure supercritical environment, then conduct one or more of the following combinations of sequences:
  • Surfactants are known to help modify the zeta potential (charge) of the particle and/or substrate surface.
  • Other embodiments of the invention process introduce a surfactant with the CO2 after the initial cleaning for the purpose of removing loose particles.
  • a surfactant for stripping photoresist one may use a co-solvent such as propylene carbonate to help swell and debond the resist. Pulsing and megasonics will strip the resist but there may remain small particles that need to be removed. In this case a surfactant can be added to the CO2 mixture.
  • the apparatus is intended to be readily adapted to an automated production line, such as for robotic loading and unloading off the extended wafer pedestal when the vessel is open.
  • an automated production line such as for robotic loading and unloading off the extended wafer pedestal when the vessel is open.
  • the top platen assembly may incorporate means for holding the wafer upside down and with the capability for rotation in accordance with the figures and description above.
  • a wafer edge support system can be configured by the principles described and illustrated to support a wafer between two megasonic transducer arrays for cleaning both sides in a single cleaning cycle.
  • a process for cleaning semiconductor wafers comprising the steps of soaking a wafer in a supercritical phase cleaning fluid mixture at an elevated pressure, rapidly reducing the elevated pressure to a substantially lower pressure, applying a megasonic acoustical wave action to the cleaning fluid mixture, and flowing a flushing fluid mixture across the wafer while draining the cleaning fluid mixture.
  • the cleaning fluid mixture may remain in supercritical phase at the lower pressure.
  • the steps of reducing pressure and applying megasonic action and flowing the flushing fluid mixture may be undertaken at substantially concurrently.
  • the cleaning fluid mixture may comprise carbon dioxide and a co-solvent.
  • the flushing fluid mixture may comprise carbon dioxide and a surfactant.
  • an apparatus for cleaning semiconductor wafers comprising a closable cleaning vessel connected to a source of cleaning fluid components and having an exhaust port, where the vessel is capable of sustaining the cleaning fluid at supercritical phase temperature and pressure, and the vessel is configured with a megasonic transducer.
  • the cleaning fluid components may comprise carbon dioxide, and may further comprise supercritical phase carbon dioxide, co-solvent, and surfactant.
  • the vessel may comprise an inverted cleaning chamber, a vertically movable underside lid, where the lid is configured with a vertically movable wafer pedestal.
  • the transducer may be at least one ceiling mounted, downward directed transducer and/or be at least one lower platen mounted, upward directed transducer and/or be at least one side mounted, horizontally directed transducer.
  • a process for cleaning semiconductor wafers consisting of the steps of soaking a wafer in a supercritical phase cleaning fluid mixture at an elevated pressure, applying a megasonic acoustical wave action to the cleaning fluid mixture, rapidly reducing the elevated pressure to a substantially lower pressure, and flowing a supercritical cleaning fluid across the wafer.
  • the cleaning fluid mixture preferably remains in supercritical phase at the lower pressure.
  • the step of applying megasonic acoustical wave action may be conducted concurrently with the step of soaking, and/or with the steps of rapidly reducing pressure and flushing.
  • the cleaning fluid mixture may be carbon dioxide and a co- solvent.
  • the flushing fluid may be carbon dioxide and a surfactant.
  • the wafer may have a preferred side to which the cleaning is directed, and where the process further consists of the initial step of suspending the wafer in a substantially horizontal plane with the preferred side down.
  • the process may include the preliminary steps of using a process chamber connected to a source of supercritical phase carbon dioxide, placing a wafer within and closing the process chamber, filling the process chamber with the supercritical phase carbon dioxide, and pressurizing the process chamber to an elevated supercritical pressure.
  • Co-solvents and surfactants are added to the supercritical phase carbon dioxide forming a supercritical phase cleaning fluid mixture, either before or after it is pumped into the process chamber. Then soaking the wafer in the process chamber in the fluid mixture at the elevated pressure.
  • the steps of pressurizing, adding, soaking, applying, rapidly reducing, and flushing may be repeated as often as needed.
  • the elevated pressure may be at least 5000 psi.
  • the substantially lower pressure may be about 1500 psi.
  • the soaking step may have a period of not more than about two minutes.
  • the temperature within the process chamber may be maintained at about 80 degrees Centigrade.
  • the megasonic acoustical wave action being applied to the surface of the wafer may be done with a transducer array having power input in the range of 5 - 10 watts/cm 2 .
  • an apparatus for cleaning semiconductor wafers consisting of a closable cleaning vessel connected to a source of cleaning fluid, having a fluid outlet, and being capable of sustaining the cleaning fluid at supercritical phase temperature and pressure, where the vessel is configured with at least one megasonic transducer.
  • the cleaning fluid may be supercritical carbon dioxide and may be a mixture of supercritical carbon dioxide and suitable co-solvents, and/or surfactants.
  • the vessel may have an inverted cleaning chamber, and a vertically movable underside lid, there the lid is configured with a vertically movable wafer support system. And the wafer support system may be configured for supporting a wafer upside down in the chamber. Or the vessel may have an upright cleaning chamber and an inverted wafer support system. Further, the vessel may have an inverted cleaning chamber, and a vertically movable underside lid, where the lid is configured with a ratable wafer holding mechanism.
  • the transducer may be at least one ceiling mounted, downward directed transducer.
  • the transducer may be a multi-segment transducer array. It may be configured for inter-segmentally variability in operational parameters.
  • the transducer may be one or more side mounted, horizontally directed transducers.
  • an apparatus for cleaning semiconductor wafers consisting of a closable cleaning vessel connected to a source of cleaning fluid and having at least one exhaust port, capable of sustaining the cleaning fluid at supercritical phase temperature and pressure, and configured with at least one megasonic transducer on the lower platen, and having an inverted wafer holder pedestal apparatus mechanized for providing wafer rotation.
  • the transducer may be at least one, and preferably at least two side-mounted, horizontally directed transducers. Or the transducer may be a multi- segment, large area transducer array.
  • a further example is an apparatus for cleaning both sides of a semiconductor wafer, having a closable cleaning vessel consisting of a base, a lid, and a wafer holder for holding a wafer in the chamber formed between the base and lid when the vessel is closed.
  • the vessel has at least one exhaust outlet, and is capable of sustaining the cleaning fluid at supercritical phase temperature and pressure.
  • the base and lid are configured with at least one large surface area megasonic transducer and at least one fluid inlet, and an apparatus for rotating the wafer holder.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention porte sur un appareil et un processus d'élimination d'une matière résiduelle, telle que le photorésist et autres matières étrangères, de plaquettes, substrats et pièces à semi-conducteurs au moyen de techniques mégasoniques, conjointement avec des processus de purification de fluide supercritique tel que le traitement du dioxyde de carbone supercritique avec des co-solvants et des tensioactifs, par trempage, décompression rapide et rinçage afin d'améliorer la capacité de nettoyage et d'éliminer des particules submicroniques des surfaces des plaquettes. L'appareil comprend un réceptacle sous pression (10) formé par la chambre (12) pourvue d'un couvercle amovible dans le sens vertical (14), un dispositif de retenue rotatif des plaquettes (16) perçant une plaque inférieure chauffée (18), un ajutage de source de fluide (20) alimenté par un trou central (32), un orifice d'évacuation de drainage du fluide (24) et un transducteur mégasonique (30) pourvu de connexions d'interface (34) d'alimentation électrique.
PCT/US2003/002113 2002-01-24 2003-01-24 Traitements de fluides supercritiques par des techniques megasoniques WO2003061860A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35152402P 2002-01-24 2002-01-24
US60/351,524 2002-01-24

Publications (1)

Publication Number Publication Date
WO2003061860A1 true WO2003061860A1 (fr) 2003-07-31

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6935352B2 (en) 2003-01-10 2005-08-30 S.C. Fluids, Inc. Adding energy to a cleaning process fluid for removing photo resist, residues and particles from semiconductor substrates, photo masks, reticles, disks and flat-panel displays
EP1618970A1 (fr) * 2004-07-22 2006-01-25 Linde Aktiengesellschaft Procédé de nettoyage au dioxyde de carbone
EP1550518A3 (fr) * 2004-01-02 2007-02-14 The Boc Group, Inc. Récipient de nettoyage mégasonique

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355901A (en) * 1992-10-27 1994-10-18 Autoclave Engineers, Ltd. Apparatus for supercritical cleaning
US5494526A (en) * 1994-04-08 1996-02-27 Texas Instruments Incorporated Method for cleaning semiconductor wafers using liquified gases
US6224774B1 (en) * 1995-11-03 2001-05-01 The University Of North Carolina At Chapel Hill Method of entraining solid particulates in carbon dioxide fluids
US6286231B1 (en) * 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US20010050096A1 (en) * 2000-04-18 2001-12-13 Costantini Michael A. Supercritical fluid delivery and recovery system for semiconductor wafer processing
US20020023662A1 (en) * 1997-03-06 2002-02-28 Cri Recycling Service, Inc. Removal of contaminants from materials
US20030062071A1 (en) * 2001-09-28 2003-04-03 Sorbo Nelson W. Dense-phase fluid cleaning system utilizing ultrasonic transducers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355901A (en) * 1992-10-27 1994-10-18 Autoclave Engineers, Ltd. Apparatus for supercritical cleaning
US5494526A (en) * 1994-04-08 1996-02-27 Texas Instruments Incorporated Method for cleaning semiconductor wafers using liquified gases
US6224774B1 (en) * 1995-11-03 2001-05-01 The University Of North Carolina At Chapel Hill Method of entraining solid particulates in carbon dioxide fluids
US20020023662A1 (en) * 1997-03-06 2002-02-28 Cri Recycling Service, Inc. Removal of contaminants from materials
US6286231B1 (en) * 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
US20010050096A1 (en) * 2000-04-18 2001-12-13 Costantini Michael A. Supercritical fluid delivery and recovery system for semiconductor wafer processing
US20030062071A1 (en) * 2001-09-28 2003-04-03 Sorbo Nelson W. Dense-phase fluid cleaning system utilizing ultrasonic transducers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6935352B2 (en) 2003-01-10 2005-08-30 S.C. Fluids, Inc. Adding energy to a cleaning process fluid for removing photo resist, residues and particles from semiconductor substrates, photo masks, reticles, disks and flat-panel displays
EP1550518A3 (fr) * 2004-01-02 2007-02-14 The Boc Group, Inc. Récipient de nettoyage mégasonique
EP1618970A1 (fr) * 2004-07-22 2006-01-25 Linde Aktiengesellschaft Procédé de nettoyage au dioxyde de carbone
WO2006008035A1 (fr) * 2004-07-22 2006-01-26 Linde Aktiengesellschaft Procede de nettoyage au co2

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