WO2003049169A1 - Plasma etching method and plasma etching device - Google Patents

Plasma etching method and plasma etching device Download PDF

Info

Publication number: WO2003049169A1
Authority: WO; WIPO (PCT)
Prior art keywords: plasma etching; plasma; electrodes; material film; treated
Prior art date: 2001-12-05

Application number

PCT/JP2002/012720

Other languages

English (en)

French (fr)

Inventor

Masanobu Honda

Kazuya Nagaseki

Koichiro Inazawa

Shoichiro Matsuyama

Hisataka Hayashi

Original Assignee

Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-12-05

Filing date

2002-12-04

Publication date

2003-06-12

2002-12-04 Application filed by Tokyo Electron Limited, Kabushiki Kaisha Toshiba filed Critical Tokyo Electron Limited

2002-12-04 Priority to AU2002349419A priority Critical patent/AU2002349419A1/en

2003-06-12 Publication of WO2003049169A1 publication Critical patent/WO2003049169A1/ja

2004-06-04 Priority to US10/860,152 priority patent/US7625494B2/en

2009-10-13 Priority to US12/578,007 priority patent/US8840753B2/en

Links

238000000034 method Methods 0.000 title abstract 4
238000001020 plasma etching Methods 0.000 title abstract 4
239000000758 substrate Substances 0.000 abstract 3
230000005684 electric field Effects 0.000 abstract 2
238000005530 etching Methods 0.000 abstract 2
239000011147 inorganic material Substances 0.000 abstract 2
229910010272 inorganic material Inorganic materials 0.000 abstract 2
239000011368 organic material Substances 0.000 abstract 2

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Chemical & Material Sciences (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Analytical Chemistry (AREA)
Plasma & Fusion (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Drying Of Semiconductors (AREA)
Plasma Technology (AREA)

PCT/JP2002/012720 2001-12-05 2002-12-04 Plasma etching method and plasma etching device WO2003049169A1 (en)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
AU2002349419A AU2002349419A1 (en)	2001-12-05	2002-12-04	Plasma etching method and plasma etching device
US10/860,152 US7625494B2 (en)	2001-12-05	2004-06-04	Plasma etching method and plasma etching unit
US12/578,007 US8840753B2 (en)	2001-12-05	2009-10-13	Plasma etching unit

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP2001/370898		2001-12-05
JP2001370898		2001-12-05
JP2002127051A JP2003234331A (ja)	2001-12-05	2002-04-26	プラズマエッチング方法およびプラズマエッチング装置
JP2002/127051		2002-04-26

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
US10/860,152 Continuation US7625494B2 (en)	2001-12-05	2004-06-04	Plasma etching method and plasma etching unit

Publications (1)

Publication Number	Publication Date
WO2003049169A1 true WO2003049169A1 (en)	2003-06-12

Family

ID=26624882

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PCT/JP2002/012720 WO2003049169A1 (en)	2001-12-05	2002-12-04	Plasma etching method and plasma etching device

Country Status (5)

Country	Link
US (2)	US7625494B2 (ja)
JP (1)	JP2003234331A (ja)
AU (1)	AU2002349419A1 (ja)
TW (1)	TWI263276B (ja)
WO (1)	WO2003049169A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7625494B2 (en)	2001-12-05	2009-12-01	Tokyo Electron Limited	Plasma etching method and plasma etching unit

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7517801B1 (en) *	2003-12-23	2009-04-14	Lam Research Corporation	Method for selectivity control in a plasma processing system
US8222155B2 (en)	2004-06-29	2012-07-17	Lam Research Corporation	Selectivity control in a plasma processing system
JP4827081B2 (ja) *	2005-12-28	2011-11-30	東京エレクトロン株式会社	プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
US7914692B2 (en)	2006-08-29	2011-03-29	Ngk Insulators, Ltd.	Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding
JP2008060429A (ja) *	2006-08-31	2008-03-13	Toshiba Corp	基板のプラズマ処理装置及びプラズマ処理方法
US7851367B2 (en)	2006-08-31	2010-12-14	Kabushiki Kaisha Toshiba	Method for plasma processing a substrate
US7977244B2 (en)	2006-12-18	2011-07-12	United Microelectronics Corp.	Semiconductor manufacturing process
US7938976B2 (en) *	2007-02-27	2011-05-10	International Business Machines Corporation	Method of removing graphitic and/or fluorinated organic layers from the surface of a chip passivation layer having Si-containing compounds
JP4660498B2 (ja)	2007-03-27	2011-03-30	株式会社東芝	基板のプラズマ処理装置
JP4607930B2 (ja) *	2007-09-14	2011-01-05	株式会社東芝	プラズマ処理装置およびプラズマ処理方法
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JP4756063B2 (ja) *	2008-08-15	2011-08-24	株式会社東芝	半導体装置の製造方法
JP5295833B2 (ja) *	2008-09-24	2013-09-18	株式会社東芝	基板処理装置および基板処理方法
EP2251671B1 (en)	2009-05-13	2017-04-26	SiO2 Medical Products, Inc.	Outgassing method for inspecting a coated surface
JP5395491B2 (ja)	2009-03-31	2014-01-22	東京エレクトロン株式会社	基板処理装置及び基板処理方法
US9458536B2 (en)	2009-07-02	2016-10-04	Sio2 Medical Products, Inc.	PECVD coating methods for capped syringes, cartridges and other articles
JP2011192776A (ja) *	2010-03-15	2011-09-29	Toshiba Corp	半導体装置の製造方法
TW201203352A (en) *	2010-03-16	2012-01-16	Ulvac Inc	Etching method and etching apparatus
US11624115B2 (en)	2010-05-12	2023-04-11	Sio2 Medical Products, Inc.	Syringe with PECVD lubrication
US9878101B2 (en)	2010-11-12	2018-01-30	Sio2 Medical Products, Inc.	Cyclic olefin polymer vessels and vessel coating methods
JP5709505B2 (ja) *	2010-12-15	2015-04-30	東京エレクトロン株式会社	プラズマ処理装置、プラズマ処理方法、および記憶媒体
US9272095B2 (en)	2011-04-01	2016-03-01	Sio2 Medical Products, Inc.	Vessels, contact surfaces, and coating and inspection apparatus and methods
US11116695B2 (en)	2011-11-11	2021-09-14	Sio2 Medical Products, Inc.	Blood sample collection tube
AU2012318242A1 (en)	2011-11-11	2013-05-30	Sio2 Medical Products, Inc.	Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus
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US20150297800A1 (en)	2012-07-03	2015-10-22	Sio2 Medical Products, Inc.	SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
JP6207880B2 (ja) *	2012-09-26	2017-10-04	東芝メモリ株式会社	プラズマ処理装置およびプラズマ処理方法
JP6509734B2 (ja)	2012-11-01	2019-05-08	エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド	皮膜検査方法
US9903782B2 (en)	2012-11-16	2018-02-27	Sio2 Medical Products, Inc.	Method and apparatus for detecting rapid barrier coating integrity characteristics
US9764093B2 (en)	2012-11-30	2017-09-19	Sio2 Medical Products, Inc.	Controlling the uniformity of PECVD deposition
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US9662450B2 (en)	2013-03-01	2017-05-30	Sio2 Medical Products, Inc.	Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en)	2013-03-11	2018-04-10	Sio2 Medical Products, Inc.	Trilayer coated pharmaceutical packaging with low oxygen transmission rate
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EP3693493A1 (en)	2014-03-28	2020-08-12	SiO2 Medical Products, Inc.	Antistatic coatings for plastic vessels
JP2016092102A (ja) *	2014-10-31	2016-05-23	東京エレクトロン株式会社	有機膜をエッチングする方法
US11077233B2 (en)	2015-08-18	2021-08-03	Sio2 Medical Products, Inc.	Pharmaceutical and other packaging with low oxygen transmission rate
JP6644168B2 (ja) *	2016-12-02	2020-02-12	株式会社アルバック	配線基板の加工方法
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WO2021034698A1 (en) *	2019-08-16	2021-02-25	Applied Materials, Inc.	Tuneable uniformity control utilizing rotational magnetic housing
US12020965B2 (en)	2020-10-21	2024-06-25	Applied Materials, Inc.	Magnetic holding structures for plasma processing applications
CN117423716B (zh) *	2023-12-19	2024-04-09	合肥晶合集成电路股份有限公司	背照式半导体结构刻蚀方法及刻蚀装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH098009A (ja) *	1995-06-16	1997-01-10	Tokyo Electron Ltd	プラズマ処理装置
JP2000269196A (ja) *	1999-03-19	2000-09-29	Toshiba Corp	プラズマ処理方法及びプラズマ処理装置
WO2000079586A1 (en) *	1999-06-24	2000-12-28	Hitachi, Ltd.	Production method for semiconductor integrated circuit device and semiconductor integrated circuit device
JP2001118825A (ja) *	1999-10-19	2001-04-27	Tokyo Electron Ltd	エッチング方法
JP2001118830A (ja) *	1999-10-19	2001-04-27	Tokyo Electron Ltd	プラズマ処理方法
US6239036B1 (en) *	1998-12-03	2001-05-29	Matsushita Electric Industrial Co., Ltd.	Apparatus and method for plasma etching

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA1159012A (en) *	1980-05-02	1983-12-20	Seitaro Matsuo	Plasma deposition apparatus
DE3175576D1 (en) *	1980-12-11	1986-12-11	Toshiba Kk	Dry etching device and method
DE3729347A1 (de) *	1986-09-05	1988-03-17	Mitsubishi Electric Corp	Plasmaprozessor
US5444207A (en) *	1992-03-26	1995-08-22	Kabushiki Kaisha Toshiba	Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
JPH06181187A (ja) *	1992-12-11	1994-06-28	Hitachi Ltd	スパッタリング装置
US5556474A (en) *	1993-12-14	1996-09-17	Nissin Electric Co., Ltd.	Plasma processing apparatus
US5518547A (en) *	1993-12-23	1996-05-21	International Business Machines Corporation	Method and apparatus for reducing particulates in a plasma tool through steady state flows
JP3257328B2 (ja) *	1995-03-16	2002-02-18	株式会社日立製作所	プラズマ処理装置及びプラズマ処理方法
US5659276A (en) *	1995-07-12	1997-08-19	Shin-Etsu Chemical Co., Ltd.	Magnetic field generator for magnetron plasma
US5837615A (en) *	1995-09-21	1998-11-17	Lsi Logic Corporation	Integrated circuit device fabrication by plasma etching
TW335517B (en) *	1996-03-01	1998-07-01	Hitachi Ltd	Apparatus and method for processing plasma
US6048435A (en) *	1996-07-03	2000-04-11	Tegal Corporation	Plasma etch reactor and method for emerging films
US5993916A (en) *	1996-07-12	1999-11-30	Applied Materials, Inc.	Method for substrate processing with improved throughput and yield
JP3220383B2 (ja) *	1996-07-23	2001-10-22	東京エレクトロン株式会社	プラズマ処理装置及びその方法
US6014943A (en) *	1996-09-12	2000-01-18	Tokyo Electron Limited	Plasma process device
US6635185B2 (en) *	1997-12-31	2003-10-21	Alliedsignal Inc.	Method of etching and cleaning using fluorinated carbonyl compounds
US6642149B2 (en) *	1998-09-16	2003-11-04	Tokyo Electron Limited	Plasma processing method
JP4230029B2 (ja) *	1998-12-02	2009-02-25	東京エレクトロン株式会社	プラズマ処理装置およびエッチング方法
JP4285853B2 (ja) *	1999-09-08	2009-06-24	東京エレクトロン株式会社	処理方法
JP4578651B2 (ja) *	1999-09-13	2010-11-10	東京エレクトロン株式会社	プラズマ処理方法およびプラズマ処理装置、プラズマエッチング方法
JP3400770B2 (ja) *	1999-11-16	2003-04-28	松下電器産業株式会社	エッチング方法、半導体装置及びその製造方法
JP2001308175A (ja) *	2000-04-21	2001-11-02	Nec Corp	半導体装置及びその製造方法
JP3403373B2 (ja) *	2000-05-26	2003-05-06	松下電器産業株式会社	有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP2001338912A (ja) *	2000-05-29	2001-12-07	Tokyo Electron Ltd	プラズマ処理装置および処理方法
DE10037957C1 (de) *	2000-07-27	2002-02-28	Infineon Technologies Ag	Verfahren zum anisotropen Trockenätzen organischer Antireflexionsschichten
JP4657473B2 (ja) *	2001-03-06	2011-03-23	東京エレクトロン株式会社	プラズマ処理装置
JP2003234331A (ja)	2001-12-05	2003-08-22	Tokyo Electron Ltd	プラズマエッチング方法およびプラズマエッチング装置
JP2004014752A (ja) *	2002-06-06	2004-01-15	Tokyo Electron Ltd	静電チャック、被処理体載置台およびプラズマ処理装置
US7473377B2 (en) *	2002-06-27	2009-01-06	Tokyo Electron Limited	Plasma processing method
JP2004214336A (ja) *	2002-12-27	2004-07-29	Tokyo Electron Ltd	プラズマエッチング方法およびプラズマエッチング装置
JP4412661B2 (ja) *	2004-10-15	2010-02-10	信越化学工業株式会社	プラズマ処理装置及びプラズマ処理方法

2002
- 2002-04-26 JP JP2002127051A patent/JP2003234331A/ja active Pending
- 2002-12-04 WO PCT/JP2002/012720 patent/WO2003049169A1/ja active Application Filing
- 2002-12-04 AU AU2002349419A patent/AU2002349419A1/en not_active Abandoned
- 2002-12-04 TW TW91135187A patent/TWI263276B/zh not_active IP Right Cessation
2004
- 2004-06-04 US US10/860,152 patent/US7625494B2/en not_active Expired - Fee Related
2009
- 2009-10-13 US US12/578,007 patent/US8840753B2/en not_active Expired - Fee Related

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH098009A (ja) *	1995-06-16	1997-01-10	Tokyo Electron Ltd	プラズマ処理装置
US6239036B1 (en) *	1998-12-03	2001-05-29	Matsushita Electric Industrial Co., Ltd.	Apparatus and method for plasma etching
JP2000269196A (ja) *	1999-03-19	2000-09-29	Toshiba Corp	プラズマ処理方法及びプラズマ処理装置
WO2000079586A1 (en) *	1999-06-24	2000-12-28	Hitachi, Ltd.	Production method for semiconductor integrated circuit device and semiconductor integrated circuit device
JP2001118825A (ja) *	1999-10-19	2001-04-27	Tokyo Electron Ltd	エッチング方法
JP2001118830A (ja) *	1999-10-19	2001-04-27	Tokyo Electron Ltd	プラズマ処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7625494B2 (en)	2001-12-05	2009-12-01	Tokyo Electron Limited	Plasma etching method and plasma etching unit
US8840753B2 (en)	2001-12-05	2014-09-23	Tokyo Electron Limited	Plasma etching unit

Also Published As

Publication number	Publication date
JP2003234331A (ja)	2003-08-22
US8840753B2 (en)	2014-09-23
US20040219797A1 (en)	2004-11-04
TW200301521A (en)	2003-07-01
US20100024983A1 (en)	2010-02-04
TWI263276B (en)	2006-10-01
AU2002349419A1 (en)	2003-06-17
US7625494B2 (en)	2009-12-01

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