WO2003044571A3 - Coating of optical device facets at the wafer-level - Google Patents
Coating of optical device facets at the wafer-level Download PDFInfo
- Publication number
- WO2003044571A3 WO2003044571A3 PCT/GB2002/005205 GB0205205W WO03044571A3 WO 2003044571 A3 WO2003044571 A3 WO 2003044571A3 GB 0205205 W GB0205205 W GB 0205205W WO 03044571 A3 WO03044571 A3 WO 03044571A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- facets
- optical device
- coating
- optical devices
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 5
- 238000000576 coating method Methods 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
In the present invention, the or each facet of an optical device is defined on a wafer and then optically coated, prior to separation of the device from the rest of the wafer, which may contain other optical devices whose facets have been processed in the same manner. Thus, the facets of many optical devices may simultaneously be defined by an etching process and then optically coated, whilst the devices form part of the wafer. This approach provides for ease of multiple device manufacture at a lower cost. Furthermore, the etching and coating processes can be performed in the same controlled environment, preferably a vacuum, before the wafer is removed to be diced up into individual optical devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2002339189A AU2002339189A1 (en) | 2001-11-19 | 2002-11-18 | Coating of optical device facets at the wafer-level |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0127690.6A GB0127690D0 (en) | 2001-11-19 | 2001-11-19 | Coating of optical device facets at the wafer-level |
| GB0127690.6 | 2001-11-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2003044571A2 WO2003044571A2 (en) | 2003-05-30 |
| WO2003044571A3 true WO2003044571A3 (en) | 2004-04-01 |
Family
ID=9926024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB2002/005205 WO2003044571A2 (en) | 2001-11-19 | 2002-11-18 | Coating of optical device facets at the wafer-level |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2002339189A1 (en) |
| GB (1) | GB0127690D0 (en) |
| WO (1) | WO2003044571A2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2439973A (en) * | 2006-07-13 | 2008-01-16 | Sharp Kk | Modifying the optical properties of a nitride optoelectronic device |
| DE102011054954A1 (en) | 2011-10-31 | 2013-05-02 | Osram Opto Semiconductors Gmbh | Process for producing an optoelectronic semiconductor component and optoelectronic semiconductor laser |
| DE102012215265B4 (en) | 2012-08-28 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | METHOD OF MAKING A LASER DIODE, HOLDER AND LASER DIODE |
| CN108886236B (en) * | 2016-02-08 | 2022-02-25 | 斯考皮欧技术有限公司 | Broadband rearview mirror for III-V chip in silicon photonics |
| US10732349B2 (en) | 2016-02-08 | 2020-08-04 | Skorpios Technologies, Inc. | Broadband back mirror for a III-V chip in silicon photonics |
| DE102020130017A1 (en) | 2020-11-13 | 2022-05-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | PROCESSES FOR MANUFACTURING A VARIETY OF SEMICONDUCTOR LASERS AND SEMICONDUCTOR LASERS |
| GB202113618D0 (en) | 2021-09-23 | 2021-11-10 | Sivers Photonics Ltd | Etched-facet photonic devices with improved anti-refelction coating |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5185290A (en) * | 1989-08-17 | 1993-02-09 | Mitsubishi Denki Kabushiki Kaisha | Method of coating facet of semiconductor optical element |
| EP0684671A1 (en) * | 1994-05-04 | 1995-11-29 | Alcatel N.V. | Method for the preparation and passivation of the end mirrors of a high emissive power semiconductor laser and related laser device |
| EP0834489A1 (en) * | 1996-10-04 | 1998-04-08 | Dow Corning Corporation | Thick opaque ceramic coatings |
| WO2000021168A1 (en) * | 1998-10-08 | 2000-04-13 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
| US6289030B1 (en) * | 1997-01-31 | 2001-09-11 | Hewlett-Packard Company | Fabrication of semiconductor devices |
-
2001
- 2001-11-19 GB GBGB0127690.6A patent/GB0127690D0/en not_active Ceased
-
2002
- 2002-11-18 WO PCT/GB2002/005205 patent/WO2003044571A2/en not_active Application Discontinuation
- 2002-11-18 AU AU2002339189A patent/AU2002339189A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5185290A (en) * | 1989-08-17 | 1993-02-09 | Mitsubishi Denki Kabushiki Kaisha | Method of coating facet of semiconductor optical element |
| EP0684671A1 (en) * | 1994-05-04 | 1995-11-29 | Alcatel N.V. | Method for the preparation and passivation of the end mirrors of a high emissive power semiconductor laser and related laser device |
| EP0834489A1 (en) * | 1996-10-04 | 1998-04-08 | Dow Corning Corporation | Thick opaque ceramic coatings |
| US6289030B1 (en) * | 1997-01-31 | 2001-09-11 | Hewlett-Packard Company | Fabrication of semiconductor devices |
| WO2000021168A1 (en) * | 1998-10-08 | 2000-04-13 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
Non-Patent Citations (2)
| Title |
|---|
| MAMORU UCHIDA ET AL: "AN ALGAAS LASER WITH HIGH-QUALITY DRY ETCHED MIRRORS FABRICATED USING AN ULTRAHIGH VACUUM IN SITU DRY ETCHING AND DEPOSITION PROCESSING SYSTEM", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 24, no. 11, 1 November 1988 (1988-11-01), pages 2170 - 2177, XP000119041, ISSN: 0018-9197 * |
| VETTIGER P ET AL: "FULL-WAFER TECHNOLOGY-A NEW APPROACH TO LARGE-SCALE LASER FABRICATION AND INTEGRATION", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE INC. NEW YORK, US, vol. 27, no. 6, 1 June 1991 (1991-06-01), pages 1319 - 1331, XP000229827, ISSN: 0018-9197 * |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002339189A8 (en) | 2003-06-10 |
| WO2003044571A2 (en) | 2003-05-30 |
| GB0127690D0 (en) | 2002-01-09 |
| AU2002339189A1 (en) | 2003-06-10 |
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