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WO2003044123A1 - Particules destinees a etre utilisees dans des pates de polissage chimico-mecanique et leur procede de production - Google Patents

Particules destinees a etre utilisees dans des pates de polissage chimico-mecanique et leur procede de production Download PDF

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Publication number
WO2003044123A1
WO2003044123A1 PCT/US2002/035672 US0235672W WO03044123A1 WO 2003044123 A1 WO2003044123 A1 WO 2003044123A1 US 0235672 W US0235672 W US 0235672W WO 03044123 A1 WO03044123 A1 WO 03044123A1
Authority
WO
WIPO (PCT)
Prior art keywords
process according
silicon
abrasive particles
titanium
particles
Prior art date
Application number
PCT/US2002/035672
Other languages
English (en)
Inventor
Xiangdong Feng
Yie-Shein Her
Original Assignee
Ferro Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/992,485 external-priority patent/US6596042B1/en
Application filed by Ferro Corporation filed Critical Ferro Corporation
Priority to AU2002359356A priority Critical patent/AU2002359356A1/en
Publication of WO2003044123A1 publication Critical patent/WO2003044123A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/04—Oxides; Hydroxides
    • C01G23/047—Titanium dioxide
    • C01G23/053—Producing by wet processes, e.g. hydrolysing titanium salts
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/36—Compounds of titanium
    • C09C1/3607—Titanium dioxide
    • C09C1/3653—Treatment with inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/60—Compounds characterised by their crystallite size
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/90—Other properties not specified above

Definitions

  • the present invention provides a process for producing abrasive
  • CMP Chemical-mechanical polishing
  • CMP slurries typically include reactive chemical agents and
  • abrasive particles dispersed in a liquid carrier.
  • the abrasive particles perform
  • abrasive particles formed of, for example, alumina (Al 2 0 3 ), eerie oxide (Ce0 2 ),
  • iron oxide Fe 2 0 3
  • silica Si0 2
  • silicon carbide SiC
  • silicon nitride Si 3 N 4
  • tin oxide Sn0 2
  • titania Ti0 2
  • titanium carbide TiC
  • tungstic oxide W0 3
  • over-sized abrasive particles can result in undesirable surface scratching
  • CMP slurry is free of contaminants.
  • hydrothermal synthesis which is also known as hydrothermal
  • eerie oxide (Ce0 2 ) particles via hydrothermal treatment is disclosed, for
  • hydrothermal treatment processes tend not to provide desired high polishing
  • the present invention provides a process for producing abrasive
  • process according to the invention comprises mixing a crystallization
  • promoter such as titanium (IV) isopropoxide with a cerium compound and a
  • Fig. 1 is a graph showing the particle size distribution of particles
  • the present invention provides a process for producing abrasive
  • the process comprises mixing a
  • the invention is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate). However, it is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate). However, it is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate). However, it is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate). However, it is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate). However, it is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate). However, it is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate). However, it is (NH 4 ) 2 Ce(N0 3 ) 6 (ammonium cerium (IV) nitrate
  • cerium compounds can also be used.
  • compounds for use in the invention include, for example, cerium nitrate,
  • cerium chloride cerium sulfate, cerium bromide, and cerium iodide.
  • the mixture must also comprise one or more crystallization
  • the presently most preferred crystallization promoter is a titanium compound, namely Ti[OCH(CH 3 ) 2 )] 4 (titanium (IV) isopropoxide), but other
  • titanium compounds can be also used, such as, for example, titanium
  • non-metallic compounds such as nitrogenous cyclic
  • polymers polymers, poly glycols, alcohols, and ketones. In some cases, the
  • crystallization promoter can also serve as the solvent. Use of a crystallization
  • promoter is essential in order to obtain particles having a relatively large
  • titanium such as alkaline earth metals (group IIA of the periodic table),
  • transition metals (element 21 , scandium, through element 29, copper;
  • element 39 yttrium, through element 47, silver; element 57, lanthanum,
  • Scandium compounds in particular, can be
  • cerium oxide (Ce0 2 ) particles used to produce cerium oxide (Ce0 2 ) particles according to the process of the
  • One or more bases can be optionally added to raise the pH of the
  • Suitable bases include, for example, ammonium
  • hydroxide potassium hydroxide
  • organoamines such as ethyl amine
  • ethanol amine and/or polyorganoamines such as polyethylene imine.
  • Urea does not act as a base until it is heated, so it
  • hydrothermal treatment is typically accomplished by
  • the mixture can be, but need not be, stirred during hydrothermal treatment. It
  • cerium ion concentrations tending to produce particles having a larger
  • nm to about 10,000 nm can be obtained via the process, but particles having
  • hydrothermal conditions i.e., temperature, time, pH, etc.
  • TEOS tetraethoxyorthosilicate
  • 20 ⁇ A predominantly comprise cerium oxide (Ce0 2 ) having a cubic crystal
  • the titanium atoms are incorporated into the cubic cerium oxide crystal
  • crystallization promoters When a crystallization promoter selected from the
  • the cerium oxide particles will exhibit a cubic crystal lattice
  • promoters have sufficient time to homogeneously mix with the cerium
  • CMP slurries can be formed
  • the abrasive particles formed according to the invention can be any suitable abrasive particles formed according to the invention.
  • the abrasive particles formed according to the invention can be any suitable abrasive particles formed according to the invention.
  • the invention include, but are not limited to TEOS silicon dioxide, spin-on glass, organosilicates, silicon nitride, silicon oxynitride, silicon, silicon carbide,
  • inventions are particularly useful for polishing layers in semiconductor devices.
  • the stainless steel vessel was
  • the reaction product consisted of a dispersion of Ce0 2
  • the cerium oxide particles had an average
  • Slurry A consisted of 100 parts by weight of the cerium oxide nanoparticle dispersion formed in Example 1.
  • Slurry B was
  • Example 2 formed in Example 2 was used instead of the cerium oxide nanoparticle
  • Slurry C was identical to Slurry A, except that
  • dispersion comprised conventional calcined cerium oxide (Ferro Electronic
  • TEOS Si0 2 silicon dioxide
  • polishing was performed using a Strasbaugh 6EC polisher, a Rodel IC1000
  • Slurry A had a Si0 2 removal rate of 3500 A/min and produced a surface
  • Example 5 a surface having a root-mean-square average roughness of 3.0A.
  • PVP pyrrolidone
  • cerium oxide particles had an average particle diameter D 50 of 100 nm and an average
  • urea were dissolved in 700 ml Dl-water in a 1000 ml beaker. Then, 7.52
  • the sealed steel vessel was
  • the so-obtained cerium oxide particles had an average diameter D 50 of 860
  • cerium oxide particles had an average

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • Materials Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Nanotechnology (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un procédé de production de particules aptes à une utilisation en tant qu'abrasifs dans des pâtes de polissage chimico-mécanique. Le procédé selon l'invention consiste à mélanger au moins un promoteur de cristallisation tel que Ti[OCH(CH3)2)]4 avec au moins un composé de cérium ainsi qu'au moins un solvant, et à soumettre ledit mélange à un traitement hydrothermique à une température d'environ 60° C à environ 700° C pour produire les particules. Les particules formées selon la présente invention présentent une grande taille de cristallite, et elles peuvent être utilisées pour polir des substrats contenant du silicium jusqu'à obtention d'un degré élevé de planéité à un rythme relativement élevé.
PCT/US2002/035672 2001-11-16 2002-11-06 Particules destinees a etre utilisees dans des pates de polissage chimico-mecanique et leur procede de production WO2003044123A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002359356A AU2002359356A1 (en) 2001-11-16 2002-11-06 Particles for use in cmp slurries and method for producing them

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/992,485 2001-11-16
US09/992,485 US6596042B1 (en) 2001-11-16 2001-11-16 Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process
US10/255,136 2002-09-25
US10/255,136 US6818030B2 (en) 2001-11-16 2002-09-25 Process for producing abrasive particles and abrasive particles produced by the process

Publications (1)

Publication Number Publication Date
WO2003044123A1 true WO2003044123A1 (fr) 2003-05-30

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Family Applications (1)

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Country Status (3)

Country Link
US (1) US20050003744A1 (fr)
AU (1) AU2002359356A1 (fr)
WO (1) WO2003044123A1 (fr)

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MX2008012426A (es) * 2006-03-30 2008-12-18 Rhodia Superficies modificadas y metodo para modificar una superficie.
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WO2010045484A1 (fr) * 2008-10-15 2010-04-22 The Trustees Of Columbia University In The City Of New York Procédés permettant de produire des nanoparticules dotées d’une fréquence des défauts élevée et utilisations associées
WO2010062964A1 (fr) 2008-11-26 2010-06-03 The Trustees Of Columbia University In The City Of New York Procédés de fabrication de nanoparticules à l'aide d'un sel de palladium et leurs utilisations
KR101100297B1 (ko) 2009-01-09 2011-12-28 한국과학기술연구원 금속 화합물 미세 분말의 제조방법
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TWI573864B (zh) 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
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US10217645B2 (en) 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
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KR20170077209A (ko) * 2014-10-30 2017-07-05 어플라이드 머티어리얼스, 인코포레이티드 나노입자 기반 세륨 산화물 슬러리들
JP6827318B2 (ja) * 2016-12-28 2021-02-10 花王株式会社 酸化セリウム砥粒
US10319601B2 (en) 2017-03-23 2019-06-11 Applied Materials, Inc. Slurry for polishing of integrated circuit packaging
US20210106980A1 (en) * 2017-03-31 2021-04-15 The Johns Hopkins University Preparation and pretreatment techniques of cu/ceo2 catalysts for low temperature direct decomposition of nox exhaust gas
CN107235633A (zh) * 2017-06-06 2017-10-10 梧州水森林纳米材料科技有限公司 透明纳米晶玻璃及其制备方法
JP7071495B2 (ja) * 2017-11-15 2022-05-19 サン－ゴバン セラミックス アンド プラスティクス，インコーポレイティド 材料除去操作を行うための組成物及びその形成方法
JP2021183655A (ja) * 2020-05-21 2021-12-02 信越化学工業株式会社 合成石英ガラス基板用の研磨剤及びその研磨剤の製造方法、及び合成石英ガラス基板の研磨方法
EP4015457A1 (fr) * 2020-12-15 2022-06-22 Tata Consultancy Services Limited Procédé pour améliorer le rendement dans la production de nanoparticules
CN115159558B (zh) * 2022-07-05 2023-10-03 冕宁县新盛源新材料科技有限公司 一种稀土碳酸盐的沉淀方法
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AU2002359356A1 (en) 2003-06-10
US20050003744A1 (en) 2005-01-06

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