WO2002033729A3 - Plasma reactor with reduced reaction chamber - Google Patents
Plasma reactor with reduced reaction chamber Download PDFInfo
- Publication number
- WO2002033729A3 WO2002033729A3 PCT/US2001/032094 US0132094W WO0233729A3 WO 2002033729 A3 WO2002033729 A3 WO 2002033729A3 US 0132094 W US0132094 W US 0132094W WO 0233729 A3 WO0233729 A3 WO 0233729A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- assembly
- plasma reactor
- reaction chamber
- wafer
- plasma
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002211730A AU2002211730A1 (en) | 2000-10-16 | 2001-10-15 | Plasma reactor with reduced reaction chamber |
US10/401,571 US20030209324A1 (en) | 2000-10-16 | 2003-03-31 | Plasma reactor with reduced reaction chamber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24005700P | 2000-10-16 | 2000-10-16 | |
US60/240,057 | 2000-10-16 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/401,571 Continuation US20030209324A1 (en) | 2000-10-16 | 2003-03-31 | Plasma reactor with reduced reaction chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002033729A2 WO2002033729A2 (en) | 2002-04-25 |
WO2002033729A3 true WO2002033729A3 (en) | 2002-08-01 |
Family
ID=22904926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/032094 WO2002033729A2 (en) | 2000-10-16 | 2001-10-15 | Plasma reactor with reduced reaction chamber |
Country Status (3)
Country | Link |
---|---|
US (1) | US20030209324A1 (en) |
AU (1) | AU2002211730A1 (en) |
WO (1) | WO2002033729A2 (en) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US20030024900A1 (en) * | 2001-07-24 | 2003-02-06 | Tokyo Electron Limited | Variable aspect ratio plasma source |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US20040189336A1 (en) * | 2003-03-26 | 2004-09-30 | Tokyo Electron Limited | Apparatus for monitoring the connection state of connectors and a method for using the same |
US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
US8293069B2 (en) * | 2004-03-15 | 2012-10-23 | Sungkyunkwan University | Inductively coupled plasma apparatus |
US8317968B2 (en) * | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
KR100897176B1 (en) * | 2005-07-20 | 2009-05-14 | 삼성모바일디스플레이주식회사 | Inductively Coupled Plasma Treatment Equipment |
US7897217B2 (en) * | 2005-11-18 | 2011-03-01 | Tokyo Electron Limited | Method and system for performing plasma enhanced atomic layer deposition |
US20070116872A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US20070116873A1 (en) * | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
US7909961B2 (en) * | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7943005B2 (en) * | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
TW200830941A (en) * | 2007-01-15 | 2008-07-16 | Jehara Corp | Plasma generating apparatus |
KR100907438B1 (en) * | 2007-01-15 | 2009-07-14 | (주)제이하라 | Plasma generator |
US7993457B1 (en) * | 2007-01-23 | 2011-08-09 | Novellus Systems, Inc. | Deposition sub-chamber with variable flow |
KR100873923B1 (en) * | 2007-05-18 | 2008-12-15 | (주)제이하라 | Plasma generator |
JP4638550B2 (en) * | 2008-09-29 | 2011-02-23 | 東京エレクトロン株式会社 | Mask pattern forming method, fine pattern forming method, and film forming apparatus |
CN101768731B (en) * | 2008-12-29 | 2012-10-17 | K.C.科技股份有限公司 | Atomic layer deposition apparatus |
JP5292160B2 (en) * | 2009-03-31 | 2013-09-18 | 東京エレクトロン株式会社 | Gas flow path structure and substrate processing apparatus |
US8475673B2 (en) * | 2009-04-24 | 2013-07-02 | Lam Research Company | Method and apparatus for high aspect ratio dielectric etch |
JP5432686B2 (en) * | 2009-12-03 | 2014-03-05 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP5591585B2 (en) * | 2010-05-17 | 2014-09-17 | 東京エレクトロン株式会社 | Plasma processing equipment |
US9398680B2 (en) * | 2010-12-03 | 2016-07-19 | Lam Research Corporation | Immersible plasma coil assembly and method for operating the same |
US8562785B2 (en) * | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
US9245717B2 (en) | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
US20130160948A1 (en) * | 2011-12-23 | 2013-06-27 | Lam Research Corporation | Plasma Processing Devices With Corrosion Resistant Components |
US8970114B2 (en) | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
US9353439B2 (en) | 2013-04-05 | 2016-05-31 | Lam Research Corporation | Cascade design showerhead for transient uniformity |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
US10358721B2 (en) * | 2015-10-22 | 2019-07-23 | Asm Ip Holding B.V. | Semiconductor manufacturing system including deposition apparatus |
US20180142355A1 (en) * | 2016-11-18 | 2018-05-24 | Adnanotek Corp. | System integrating atomic layer deposition and reactive ion etching |
JP6615153B2 (en) * | 2017-06-16 | 2019-12-04 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate mounting mechanism, and substrate processing method |
JP7011535B2 (en) * | 2018-06-07 | 2022-01-26 | 株式会社日立ハイテク | Stage device and charged particle beam device |
KR102789697B1 (en) * | 2018-09-28 | 2025-03-31 | 어플라이드 머티어리얼스, 인코포레이티드 | Coaxial lift device with dynamic leveling |
CN112807897A (en) * | 2020-05-12 | 2021-05-18 | 王怀注 | Chemical element analysis device with protection function |
US20230070804A1 (en) * | 2021-09-02 | 2023-03-09 | Wonik Ips Co., Ltd. | Substrate processing apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5723227A (en) * | 1980-07-17 | 1982-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Plasma etching device |
EP0546842A1 (en) * | 1991-12-13 | 1993-06-16 | Hughes Aircraft Company | Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances |
US5354413A (en) * | 1993-03-18 | 1994-10-11 | Advanced Micro Devices, Inc. | Electrode position controller for a semiconductor etching device |
US6000360A (en) * | 1996-07-03 | 1999-12-14 | Tokyo Electron Limited | Plasma processing apparatus |
US6074518A (en) * | 1994-04-20 | 2000-06-13 | Tokyo Electron Limited | Plasma processing apparatus |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
EP0246453A3 (en) * | 1986-04-18 | 1989-09-06 | General Signal Corporation | Novel multiple-processing and contamination-free plasma etching system |
US4951601A (en) * | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
DE3914065A1 (en) * | 1989-04-28 | 1990-10-31 | Leybold Ag | DEVICE FOR CARRYING OUT PLASMA ETCHING PROCESSES |
KR100264445B1 (en) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | Plasma Treatment Equipment |
US6537418B1 (en) * | 1997-09-19 | 2003-03-25 | Siemens Aktiengesellschaft | Spatially uniform gas supply and pump configuration for large wafer diameters |
-
2001
- 2001-10-15 AU AU2002211730A patent/AU2002211730A1/en not_active Abandoned
- 2001-10-15 WO PCT/US2001/032094 patent/WO2002033729A2/en active Application Filing
-
2003
- 2003-03-31 US US10/401,571 patent/US20030209324A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5723227A (en) * | 1980-07-17 | 1982-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Plasma etching device |
EP0546842A1 (en) * | 1991-12-13 | 1993-06-16 | Hughes Aircraft Company | Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances |
US5354413A (en) * | 1993-03-18 | 1994-10-11 | Advanced Micro Devices, Inc. | Electrode position controller for a semiconductor etching device |
US6074518A (en) * | 1994-04-20 | 2000-06-13 | Tokyo Electron Limited | Plasma processing apparatus |
US6000360A (en) * | 1996-07-03 | 1999-12-14 | Tokyo Electron Limited | Plasma processing apparatus |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 006, no. 087 (E - 108) 25 May 1982 (1982-05-25) * |
Also Published As
Publication number | Publication date |
---|---|
WO2002033729A2 (en) | 2002-04-25 |
AU2002211730A1 (en) | 2002-04-29 |
US20030209324A1 (en) | 2003-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002033729A3 (en) | Plasma reactor with reduced reaction chamber | |
WO2003010809A1 (en) | Plasma treating device and substrate mounting table | |
EP1134773A3 (en) | Method and apparatus for generating a plasma and semiconductor device fabrication method and apparatus | |
WO2003100121A3 (en) | Multistation coating device and method for plasma coating | |
TW376547B (en) | Method and apparatus for plasma processing | |
WO2002015650A3 (en) | Externally excited torroidal plasma source | |
KR970003557A (en) | Dual frequency capacitively coupled plasma reactor for material processing | |
TW348271B (en) | Low pressure and low power Cl2/HCl process for sub-micron metal etching | |
WO2002015222A3 (en) | Use of pulsed voltage in a plasma reactor | |
TW200609373A (en) | Very low temperature cvd process with independently variable conformality, stress and composition of the cvd layer | |
WO2001082355A3 (en) | Method and apparatus for plasma cleaning of workpieces | |
EP1523034A3 (en) | Method of manufacturing silicon carbide film | |
EP1804274A3 (en) | Plasma processing apparatus | |
WO2004102638A3 (en) | Rf pulsing of a narrow gap capacitively coupled reactor | |
WO2003075323A3 (en) | Device and method for anisotropically plasma etching a substrate | |
AU2001282326A1 (en) | An apparatus for the backside gas cooling of a wafer in a batch ion implantationsystem | |
KR960039123A (en) | Plasma film forming method and apparatus | |
WO2003030239A1 (en) | Silicon substrate etching method and etching apparatus | |
TW345702B (en) | Polysilicon/polycide etch process for sub-micron gate stacks | |
TW288169B (en) | Integrated arc and polysilicon etching process | |
WO2000039838A3 (en) | Method for igniting a plasma inside a plasma processing reactor | |
TW363220B (en) | Etching organic antireflective coating from a substrate | |
JP2000200698A5 (en) | ||
TW351837B (en) | Method for improving etching process | |
JPS56105480A (en) | Plasma etching method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 10401571 Country of ref document: US |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |