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WO2002033729A3 - Plasma reactor with reduced reaction chamber - Google Patents

Plasma reactor with reduced reaction chamber Download PDF

Info

Publication number
WO2002033729A3
WO2002033729A3 PCT/US2001/032094 US0132094W WO0233729A3 WO 2002033729 A3 WO2002033729 A3 WO 2002033729A3 US 0132094 W US0132094 W US 0132094W WO 0233729 A3 WO0233729 A3 WO 0233729A3
Authority
WO
WIPO (PCT)
Prior art keywords
assembly
plasma reactor
reaction chamber
wafer
plasma
Prior art date
Application number
PCT/US2001/032094
Other languages
French (fr)
Other versions
WO2002033729A2 (en
Inventor
Steven T Fink
Original Assignee
Tokyo Electron Ltd
Steven T Fink
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Steven T Fink filed Critical Tokyo Electron Ltd
Priority to AU2002211730A priority Critical patent/AU2002211730A1/en
Publication of WO2002033729A2 publication Critical patent/WO2002033729A2/en
Publication of WO2002033729A3 publication Critical patent/WO2002033729A3/en
Priority to US10/401,571 priority patent/US20030209324A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A plasma reactor apparatus (100) includes plasma generating assembly (150) that is moveable between a first and second position. The plasma generating assembly (150) includes an inductive coil assembly (216) that is coupled to a source of RF energy. In the first position, acces is provided for mounting a wafer (101) onto a chuck assembly (250). In the second position, the plasma generating assembly (150) and the substrate chuck assembly (250) form an enclosed area (300) about the wafer (101). Process gas is used to fill the enclosed space (300) while a vacuum is created in the enclosed space (300). RF energy is applied to the inductive coil (218) and plasma is formed in the enclosed space (300) in order to process the wafer (101).
PCT/US2001/032094 2000-10-16 2001-10-15 Plasma reactor with reduced reaction chamber WO2002033729A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002211730A AU2002211730A1 (en) 2000-10-16 2001-10-15 Plasma reactor with reduced reaction chamber
US10/401,571 US20030209324A1 (en) 2000-10-16 2003-03-31 Plasma reactor with reduced reaction chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24005700P 2000-10-16 2000-10-16
US60/240,057 2000-10-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/401,571 Continuation US20030209324A1 (en) 2000-10-16 2003-03-31 Plasma reactor with reduced reaction chamber

Publications (2)

Publication Number Publication Date
WO2002033729A2 WO2002033729A2 (en) 2002-04-25
WO2002033729A3 true WO2002033729A3 (en) 2002-08-01

Family

ID=22904926

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/032094 WO2002033729A2 (en) 2000-10-16 2001-10-15 Plasma reactor with reduced reaction chamber

Country Status (3)

Country Link
US (1) US20030209324A1 (en)
AU (1) AU2002211730A1 (en)
WO (1) WO2002033729A2 (en)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US20030024900A1 (en) * 2001-07-24 2003-02-06 Tokyo Electron Limited Variable aspect ratio plasma source
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US20040189336A1 (en) * 2003-03-26 2004-09-30 Tokyo Electron Limited Apparatus for monitoring the connection state of connectors and a method for using the same
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US8293069B2 (en) * 2004-03-15 2012-10-23 Sungkyunkwan University Inductively coupled plasma apparatus
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
KR100897176B1 (en) * 2005-07-20 2009-05-14 삼성모바일디스플레이주식회사 Inductively Coupled Plasma Treatment Equipment
US7897217B2 (en) * 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US20070116872A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US20070116873A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) * 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
TW200830941A (en) * 2007-01-15 2008-07-16 Jehara Corp Plasma generating apparatus
KR100907438B1 (en) * 2007-01-15 2009-07-14 (주)제이하라 Plasma generator
US7993457B1 (en) * 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
KR100873923B1 (en) * 2007-05-18 2008-12-15 (주)제이하라 Plasma generator
JP4638550B2 (en) * 2008-09-29 2011-02-23 東京エレクトロン株式会社 Mask pattern forming method, fine pattern forming method, and film forming apparatus
CN101768731B (en) * 2008-12-29 2012-10-17 K.C.科技股份有限公司 Atomic layer deposition apparatus
JP5292160B2 (en) * 2009-03-31 2013-09-18 東京エレクトロン株式会社 Gas flow path structure and substrate processing apparatus
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
JP5432686B2 (en) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 Plasma processing equipment
JP5591585B2 (en) * 2010-05-17 2014-09-17 東京エレクトロン株式会社 Plasma processing equipment
US9398680B2 (en) * 2010-12-03 2016-07-19 Lam Research Corporation Immersible plasma coil assembly and method for operating the same
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US20130160948A1 (en) * 2011-12-23 2013-06-27 Lam Research Corporation Plasma Processing Devices With Corrosion Resistant Components
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US9353439B2 (en) 2013-04-05 2016-05-31 Lam Research Corporation Cascade design showerhead for transient uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US10358721B2 (en) * 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
US20180142355A1 (en) * 2016-11-18 2018-05-24 Adnanotek Corp. System integrating atomic layer deposition and reactive ion etching
JP6615153B2 (en) * 2017-06-16 2019-12-04 東京エレクトロン株式会社 Substrate processing apparatus, substrate mounting mechanism, and substrate processing method
JP7011535B2 (en) * 2018-06-07 2022-01-26 株式会社日立ハイテク Stage device and charged particle beam device
KR102789697B1 (en) * 2018-09-28 2025-03-31 어플라이드 머티어리얼스, 인코포레이티드 Coaxial lift device with dynamic leveling
CN112807897A (en) * 2020-05-12 2021-05-18 王怀注 Chemical element analysis device with protection function
US20230070804A1 (en) * 2021-09-02 2023-03-09 Wonik Ips Co., Ltd. Substrate processing apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723227A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
EP0546842A1 (en) * 1991-12-13 1993-06-16 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances
US5354413A (en) * 1993-03-18 1994-10-11 Advanced Micro Devices, Inc. Electrode position controller for a semiconductor etching device
US6000360A (en) * 1996-07-03 1999-12-14 Tokyo Electron Limited Plasma processing apparatus
US6074518A (en) * 1994-04-20 2000-06-13 Tokyo Electron Limited Plasma processing apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
EP0246453A3 (en) * 1986-04-18 1989-09-06 General Signal Corporation Novel multiple-processing and contamination-free plasma etching system
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
DE3914065A1 (en) * 1989-04-28 1990-10-31 Leybold Ag DEVICE FOR CARRYING OUT PLASMA ETCHING PROCESSES
KR100264445B1 (en) * 1993-10-04 2000-11-01 히가시 데쓰로 Plasma Treatment Equipment
US6537418B1 (en) * 1997-09-19 2003-03-25 Siemens Aktiengesellschaft Spatially uniform gas supply and pump configuration for large wafer diameters

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723227A (en) * 1980-07-17 1982-02-06 Nippon Telegr & Teleph Corp <Ntt> Plasma etching device
EP0546842A1 (en) * 1991-12-13 1993-06-16 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances
US5354413A (en) * 1993-03-18 1994-10-11 Advanced Micro Devices, Inc. Electrode position controller for a semiconductor etching device
US6074518A (en) * 1994-04-20 2000-06-13 Tokyo Electron Limited Plasma processing apparatus
US6000360A (en) * 1996-07-03 1999-12-14 Tokyo Electron Limited Plasma processing apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 006, no. 087 (E - 108) 25 May 1982 (1982-05-25) *

Also Published As

Publication number Publication date
WO2002033729A2 (en) 2002-04-25
AU2002211730A1 (en) 2002-04-29
US20030209324A1 (en) 2003-11-13

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