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WO2002015377A1 - Unite de fourniture d'energie - Google Patents

Unite de fourniture d'energie Download PDF

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Publication number
WO2002015377A1
WO2002015377A1 PCT/JP2000/005376 JP0005376W WO0215377A1 WO 2002015377 A1 WO2002015377 A1 WO 2002015377A1 JP 0005376 W JP0005376 W JP 0005376W WO 0215377 A1 WO0215377 A1 WO 0215377A1
Authority
WO
WIPO (PCT)
Prior art keywords
power supply
mos transistor
output
voltage
rectifier circuit
Prior art date
Application number
PCT/JP2000/005376
Other languages
English (en)
Japanese (ja)
Inventor
Ikuo Nishimoto
Tatsuya Ueno
Original Assignee
Yamatake Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamatake Corporation filed Critical Yamatake Corporation
Priority to PCT/JP2000/005376 priority Critical patent/WO2002015377A1/fr
Priority to AU2000264741A priority patent/AU2000264741A1/en
Publication of WO2002015377A1 publication Critical patent/WO2002015377A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33592—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H02M7/2195—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a power supply device using a MOS transistor as a rectifying element, which can reliably prevent a charge charged in a smoothing capacitor from being discharged through the MS transistor, for example, by electromagnetic induction coupling.
  • the present invention relates to a power supply device suitable for generating a predetermined internal power supply from power energy supplied via a coil.
  • spherical semiconductors have been proposed in which functional elements such as transistor sensors and semiconductor integrated circuits that perform predetermined processing functions are formed on the surface of a spherical semiconductor chip (pole) having a diameter of about 1 mm.
  • a spherical semiconductor of this type in which a coil (loop antenna) 2 serving as an antenna element is provided on the surface of a spherical semiconductor chip 1.
  • This spherical semiconductor is configured to operate by receiving power supply from an external device using electromagnetic induction coupling via the coil 2 and to transmit and receive information signals to and from the external device via the coil. You.
  • the integrated circuit formed on the semiconductor chip 1 includes, for example, a power supply unit 3 which receives a power (electromagnetic energy) supplied from the outside via a coil 2 and generates a predetermined internal power supply, as shown in FIG. It has a receiving unit 4 for receiving an information signal from the device via the coil 2 and a transmitting unit 5 for transmitting an information signal via the coil 2 to an external device.
  • the integrated circuit includes a device main body 6 including an arithmetic control unit and the like, and also includes a sensor unit 7 such as a temperature sensing element, a memory 8, and the like, and is configured to perform a predetermined function by the operation of the device main body 6.
  • the transmission and reception of the information signal via the coil 2 is performed by modulating the information signal using an electromagnetic induction magnetic field for transmitting electric power as a carrier.
  • the power supply unit 3 is provided with, for example, a rectifier circuit 10 for performing full-wave rectification of power energy supplied via the coil 2 as shown in FIG.
  • the rectifier circuit 10 is generally configured by bridge-connecting four MOS transistors 11, 12, 13, and 14 formed on the semiconductor chip 1. These MOS transistors 11, 12, 13, and 14 have their gates cross-connected to the coil 2 so as to be selectively (complementarily) driven to conduct.
  • the rectifier circuit 10 smoothes the full-wave rectified output (pulsating flow) via the capacitor 15 to generate a stable internal power supply (DC voltage).
  • the capacitor 15 is charged due to the element structure of the M ⁇ S transistor. It cannot be denied that the generated charge is discharged through the MOS transistor.
  • a MOS transistor generally has a device structure in which a source region and a drain region are symmetrically provided with a channel region formed under a gate electrode with an insulating layer interposed therebetween. Therefore, the direction of the current flowing through the channel region is determined according to the magnitude of the voltage applied to each of the source and the drain. In other words, the MOS transistor operates by exchanging the functions as the source and the drain according to the voltages applied to the source region and the drain region, respectively.
  • the rectifier circuit 10 configured as described above, when the full-wave rectified output of the rectifier circuit 10 is smoothed using the capacitor 15, the rectified circuit 10 is obtained by the smoothed output (DC voltage). Is specified at the DC output terminal. Then, the AC voltage applied from the coil 2 to the AC input terminal of the rectifier circuit 10 becomes the smoothed output
  • the power supply device in a power supply device that supplies power energy by electromagnetic inductive coupling via a coil 2 and rectifies this power energy (AC power) to generate an internal power supply, the power supply device is an internal power supply.
  • AC power AC power
  • the power supply device In the initial state before generating the voltage, there is a problem of where to obtain the drive power supply for the voltage comparison circuit. In other words, in order for the power supply to operate, an internal power supply for operating the voltage comparison circuit is required. Conversely, if the power supply does not operate, the internal power cannot be generated.
  • another power supply such as a battery for driving the voltage comparison circuit, but it is extremely difficult to incorporate the battery in the above-mentioned spherical semiconductor. Disclosure of the invention
  • An object of the present invention is to provide a power supply device in which a smoothing capacitor is provided on the output side of a rectifier circuit using a MOS transistor as a rectifier, to provide a stable and reliable power supply device.
  • An object of the present invention is to provide a power supply device that guarantees a rectifying operation, reliably prevents discharge from the capacitor through a MOS transistor, and can efficiently obtain a smoothed output.
  • An object of the present invention is to provide a power supply device suitable for generating a predetermined DC power supply from a power supply.
  • a power supply device includes a rectifying circuit that uses a MOS transistor as a rectifying element, connects its AC input terminal to the AC power supply, and rectifies AC power obtained from the AC power supply. And a capacitor connected to the DC output terminal of the rectifier circuit for smoothing the output from the rectifier circuit.
  • the input voltage obtained from the AC power supply and the output voltage obtained by smoothing the output of the rectifier circuit with the capacitor operate as the drive power supply, and are inverted according to the magnitude of the input voltage and the output voltage.
  • a control circuit that operates to forcibly turn off a MOS transistor that constitutes the rectifier circuit when the output voltage exceeds the input voltage.
  • control circuit operates as the drive power supply the input voltage obtained from the AC power supply and the output voltage obtained by smoothing the output of the rectifier circuit with the capacitor, and the magnitude of the input voltage and the output voltage Configuration ensures that even when the input voltage is started and the output voltage smoothed by the capacitor is not obtained, the operation can be reliably performed. It is characterized by doing so.
  • the rectifier circuit is composed of four MOS transistors connected in a bridge, and the two MOS transistors forming the opposite sides of the bridge are paired and gate-controlled according to the AC input voltage to control the MOS transistors. It is a full-wave rectifier circuit that conducts full-wave rectification of the AC power obtained from the AC power source by selectively conducting each pair.
  • the control circuit is provided for each pair of MOS transistors forming the opposite side of the bridge.
  • the control circuit includes a first MOS transistor that is diode-connected and operates using the input voltage as a driving power source, and a second MOS transistor that operates using the output voltage as a driving power source,
  • the gates of the first and second M ⁇ transistors are connected in common to A voltage is compared with the output voltage. Then, when the output voltage exceeds the input voltage, the resistance of the second MOS transistor is reduced, for example, the output obtained from the source of the second MOS transistor is greatly changed (inverted), and the rectification is performed. It is configured to forcibly shut off the MOS transistor that constitutes the circuit.
  • the control circuit is a four-terminal voltage comparison circuit having a first power supply terminal also serving as a first input terminal, a second power supply terminal also serving as a second input terminal, a common power supply terminal, and an output terminal. It is characterized by being realized as a circuit.
  • the plurality of MOS transistors constituting the full-wave rectifier circuit and the control circuit are simultaneously integrated on a semiconductor substrate.
  • the AC power supply is realized as a coil for inputting power energy supplied from an external device by electromagnetic inductive coupling.
  • the semiconductor substrate is realized as a spherical semiconductor having a coil serving as an AC power supply mounted on a surface thereof.
  • FIG. 1 is a schematic configuration diagram of a power supply device according to an embodiment of the present invention.
  • FIG. 2 is a timing diagram for explaining the operation of the power supply device shown in FIG. 1 when the power is turned on.
  • FIG. 3 is a timing chart for explaining the operation of the power supply device shown in FIG. 1 when there is a positive potential change at the time of power-on.
  • FIG. 4 is a timing chart for explaining a schematic operation of the power supply device shown in FIG. 1 in a steady state.
  • FIG. 5 is a diagram showing the relationship between a spherical semiconductor and a coil provided on the surface thereof.
  • FIG. 6 is a diagram showing a schematic configuration example of an integrated circuit provided in a spherical semiconductor.
  • FIG. 7 is a diagram showing a configuration example of a conventional power supply device. BEST MODE FOR CARRYING OUT THE INVENTION
  • the power supply device is incorporated in a spherical semiconductor, rectifies power energy supplied from an external device by electromagnetic induction coupling via a coil, and rectifies the power inside the spherical semiconductor.
  • a power supply device that generates power will be described as an example.
  • FIG. 1 is a schematic configuration diagram of a power supply device according to this embodiment, and reference numeral 20 denotes a coil as an AC power supply.
  • the coil 20 is positioned in a predetermined magnetic field formed by an external device (not shown), is electromagnetically inductively coupled to the magnetic field, and receives power energy given as electromagnetic waves from the external device and supplies the power energy to the power supply device.
  • an external device not shown
  • This power supply device includes, for example, a rectifier circuit 30 configured using a MOS transistor as a rectifier and rectifying the AC power supplied from the coil 20. Further, the power supply device includes a capacitor 31 connected to the DC output terminal of the rectifier circuit 30 for smoothing the rectified output (DC; pulsating current) from the rectifier circuit 30.
  • the rectifier circuit 30 rectifies the AC power, which is the power energy obtained from the coil 20, and smoothes the rectified output (pulsating voltage) through the capacitor 31, thereby obtaining the internal power of the predetermined DC voltage. A power supply is generated.
  • the rectifier circuit 30 is realized as a full-wave rectifier circuit in which four MOS transistors Q1, Q2, Q3, and Q4 simultaneously integrated on a semiconductor substrate are bridge-connected. More specifically, the rectifier circuit 30 includes a pair of a p-MOS transistor Q1 and an n-MOS transistor Q2 provided in series with the sources connected in common, and a ??-MOS transistor Q3.
  • a bridge circuit is constructed by connecting the set of n-MOS transistors Q 4 in parallel, and the parallel connection point (drain) is used as the DC output terminal, and the series connection point (source) of each set of MOS transistors is connected to the AC. It is configured as an input end.
  • the gates of the n-MOS transistors Q 2 and Q 4 are obtained from the coil 20.
  • the AC voltages to be supplied are complementary to each other.
  • These nM ⁇ S transistors Q 2 and Q 4 conduct (turn on) when a voltage higher than the threshold voltage V thn is applied between their gates and sources, as will be described later.
  • the circuit is turned off.
  • the P-MOS transistors Q 1 and Q 3 conduct (turn on) when a low voltage (high negative voltage) equal to or lower than the threshold voltage V thp is applied to the gate of the source.
  • the control circuits 40 and 50 described later are used. It is operated by gate control.
  • the rectifier circuit 30 configured by bridge-connecting the four MOS transistors Q 1, Q 2, Q 3, and Q 4 basically includes the AC power supplied from the coil 20. (In the state where the potential at point a is higher than the potential at point b in FIG. 1), the MOS transistors Q 1 and Q 4 conduct, and the current path (+) And outputs the power from the DC output terminal. In addition, the rectifier circuit 30 applies the MOS transistors Q 3 and Q 2 to the negative-phase component of the AC power supplied from the coil 20 (in FIG. 1, the state where the potential at the point b is higher than the potential at the point a).
  • a current path (1) is formed as shown by the dashed line in the figure, and the power is output from the DC output terminal.
  • the rectifier circuit 30 performs full-wave rectification on the AC power obtained from the coil 20, and charges the capacitor 31 with the full-wave rectified output.
  • the capacitor 31 generates a predetermined stabilized DC voltage (output voltage Vout) by smoothing the full-wave rectified output.
  • the control circuits 40 and 50 for controlling the gates of the p-M 0 S transistors Q 1 and Q 3 respectively include an input voltage Vin obtained from the coil 20 and a DC output of the rectification circuit 30.
  • the output voltage Vout smoothed by the capacitor 31 operates as a driving power source, and the input voltage Vin and the output voltage V It consists of a four-terminal voltage comparison circuit that inverts according to the magnitude of out.
  • control circuits 40 and 50 basically selectively turn on the P-MOS transistors Q1 and Q3 when the input voltage Vin is higher than the output voltage Vout, Conversely, when the output voltage Vout exceeds the input voltage Vin, in other words, when the AC input voltage Vin falls below the output voltage Vout, the respective pMOS transistors Q1 and Q3 are forcibly cut off (off) control. Play a role.
  • control circuit 40 (50) is connected to the first power supply terminal 41 (51), which is one end of the coil 20 and also serves as the first input terminal to which the input voltage Vin is applied, A second power supply terminal 42 (52) also serving as a second input terminal to which the voltage Vout is applied, a common power supply terminal 43 (53) connected to the ground line (negative side of the capacitor 31) of the semiconductor substrate, and p- Each is configured as a four-terminal voltage comparison circuit having output terminals 44 (54) for outputting gate control signals for the MOS transistors Q1 and Q3.
  • the control circuit 40 (50) responds to a comparison result (magnitude relation) between the input voltage Vin and the output voltage Vout applied to the first and second input terminals 41, 42 (51, 52), respectively.
  • the inversion operation is performed by changing the gate control signal (control voltage Vcont) output from the output terminal 44 (54).
  • the control voltage Vcont is applied to the gate of the p-MOS transistor Ql (Q3), and the operation of the p-MOS transistor Q1 (Q3) is controlled.
  • the control circuit 40 (50) includes a first P-MOS transistor Q11 (Q21) which is diode-connected and operates using the input voltage Vin as a driving power supply, and the output voltage Vout as a driving power supply.
  • a second p-MOS transistor, Q12 (Q22) is activated in parallel.
  • the first p-MOS transistor Q11 (Q21) includes a diode-connected n-MOS transistor Q13 (Q23) as a load connected in series to its drain.
  • the second p-MOS transistor Q 12 (Q22) has an n- A MOS transistor Q 14 (Q24) is provided as a load.
  • the first and second p-MOS transistors Ql1, Q12 have their gates connected in common, and the drains of the first p-MOS transistors Ql1 (Q21) Each gate receives the voltage generated at the gate and operates.
  • the n-MOS transistors Q13 and Q14 (Q23, Q24) provided as loads for each of the P-MOS transistors Q11 and Q12 (Q21.Q22) are connected to the gates in common to form a current mirror circuit. And each functions as a resistance element having a constant conduction (on) resistance.
  • the ⁇ -MOS transistors Q 13 and Q 14 are, for example, MOS transistors of the same specification having uniform characteristics, specifically, their conduction (on) resistances R 13 and R 14 are equal to each other.
  • the first P-MOS transistor Q 11 has, for example, a conduction (on) resistance R 11 of the n-MOS transistor Q 13 (Q 23) as its load.
  • the control circuit 40 (50) configured as described above basically receives the positive input from one terminal a (b) of the coil 20 to the first and second input terminals 41 and 42 (51, 52). It operates when the voltage Vin is applied and the output voltage Vout is applied from the capacitor 31.
  • the voltage (control voltage Vcont) generated at the drain of the second p-MOS transistor Q12 (Q22) is changed to the ground potential of the semiconductor substrate as described later. Conversely, when the output voltage Vout is higher than the input voltage Vin, the voltage (control voltage Vcont) generated at the drain of the second p-MOS transistor Q12 (Q22) is substantially set as the output voltage Vout. As described above, the voltage (control voltage Vcont) generated at the drain of the second p-MOS transistor Q 12 (Q22), which changes according to the magnitude relationship between the input voltage Vin and the output voltage Vout, is output to the output terminal 44 (54). It is used as a gate control signal output from.
  • control circuit 40 (50) configured as described above operates using the input voltage Vin and the output voltage Vout as its driving power supply, and in particular, in this control circuit 40 (50), Even when the supply of AC power from the coil 20 is started, that is, in the initial state where the capacitor 31 is not charged by the output of the rectifier circuit 30 and the output voltage Vout is not generated, it is ensured as described below. It is supposed to work.
  • the power energy (AC power) ) Supply shall be started.
  • the AC power supplied via the coil 20 is a positive-phase component, and the potential Va at the point a in the rectifier circuit 30 in FIG. 1 is gradually increased.
  • the input voltage Vin is given as a potential difference [Va-Vb] between the potential Va at the point a and the potential Vb at the point b.
  • the n-MOS transistor Q4 When the potential difference [Va-Vb] between the points a and b exceeds the operation threshold Vthn, the n-MOS transistor Q4 is turned on. On the other hand, when the potential at the point g in the initial stage is higher than the potential at the point b [Vb> Vg], the g-side of the n-MOS transistor Q4 having a lower potential functions as a source. Before the potential difference [Va-Vb] between the points a and b reaches the operation threshold Vthn, the potential difference [Va-Vg] between the points a and g exceeds the operation threshold Vthn. S transistor Q 4 conducts (ON).
  • n-MOS transistor Q4 conducts (turns on) with the rise in the potential at point a, As a result, the potential Vb at the point b and the potential Vg at the point g become substantially equal.
  • the potential Va at the point a is applied to the source of the P-MOS transistor Q1 immediately before or after the conduction (on) timing of the n_MOS transistor Q4.
  • the gate of the P-MOS transistor Q1 is initially kept at zero (0) potential, and the drain connected to point c on the output side is also kept at zero (0) potential. Therefore, the p-MOS transistor Q1 is turned on when the potential Va exceeds the operation threshold Vthp.
  • the P-MOS transistor Q1 and the n-MOS transistor Q4 which are the opposite sides of the ridge circuit in the rectifier circuit 30, are conductive (on) with respect to the positive phase component of the AC power supplied through the coil 20. ).
  • the P-MOS transistor Q 2 and the n-MOS transistor Q 3, which are the other side of the bridge circuit in the rectifier circuit 30, are applied with voltages of opposite polarities between the gate and the source. These p-MOS transistor Q2 and n-MOS transistor Q3 are kept off.
  • the potential V a at point a is applied to the electrode side connected to the first input terminal 41 of the first p-M ⁇ S transistor Ql 1 in the control circuit 40, and the potential V at point b is applied to the other side. b is added.
  • the point a side of the first p_M ⁇ S transistor Q11 functions as a source.
  • the potential Vb at the point b is applied to the source of the nM ⁇ S transistor Q13 in accordance with the ON operation of the nM ⁇ S transistor Q4 described above.
  • the input voltage Vin given as the potential difference [Va-Vb] between the potential Va at the point a and the potential Vb at the point b is determined by the first P-MOS transistor Q11 connected in series and its load.
  • MOS transistors Ql 1 and Q13 function as resistors having predetermined conduction (on) resistances R 11 and R 13 by their conduction, respectively, and a voltage applied between both ends (between points a and g). (Input voltage Vin) is divided by resistance.
  • the P-MOS transistor Q1 of the rectifier circuit 30 becomes conductive as described above. It is in a state just after being turned on, and the capacitor 31 is almost not charged. Therefore, only the voltage at point c generated at the source of the P-MOS transistor Q1 is applied to the drain of the second P-MOS transistor Q12 as its output voltage Vout. Since the current output from the point c is also used for charging the capacitor 31, the output voltage Vout is applied to the source of the P-MOS transistor Q1 at the start of the supply of the AC power (at the initial stage). It is lower than the input voltage Vin, that is, the potential Va at the point a. Therefore, the second p_MOS transistor Q12 rarely conducts simultaneously with the above-described first p-MOS transistor Q11.
  • the voltage Vc (output voltage Vout) at the point c applied to the source of the second P-MOS transistor Q12 is changed to the voltage at the point a applied to the source of the first p-MOS transistor Q11. Since the voltage is lower than the voltage Va (input voltage Vin) and the current flowing through the second p-MOS transistor Q12 is regulated by the above-described current mirror circuit, it is necessary to have a sufficiently large on-resistance R12. And As a result, the potential Vd at the point d, which is the source of the second P-MOS transistor Q12, is maintained at a value close to the potential Vb at the point b, and is kept low.
  • each of the above p-M ⁇ ON resistance of S transistor Q11, Q12 R11, R1 2 has a magnitude relationship of [R11 ⁇ R12].
  • the potential Vd at point d which is the common connection point on the side, decreases.
  • the potential Vd at the point d is set to be substantially equal to the potential Vb at the point b. Can be.
  • the control voltage Vcont applied to the gate of the P-MOS transistor Q1 of the rectifier circuit 30 is kept sufficiently lower than the input voltage Vin applied to its source to keep the P-MOS transistor Q1 on. Becomes possible. Note that the capacitor 31 is charged by the output of the rectifier circuit 30, and the input voltage Vin starts to decrease beyond its maximum amplitude and falls below the output voltage Vout defined by the charge charged in the capacitor 31.
  • the on-resistances R11 and R12 of the first and second P-MOS transistors Q11 and Q12 have a magnitude relationship of [R11> R12], and the first p-MOS transistor Q11
  • the potential Vd at point d which is the common connection point on the second P-MOS transistor Q12 side, is higher than the potential Ve at point e, which is the common connection point on the side.
  • the potential Vd at the point d on the source side of the second P-MOS transistor Q12 becomes substantially equal to the potential Vc (> Va) at the point c.
  • the control circuit 50 described above operates on the p-MOS transistor Q3 of the rectifier circuit 30 in the same manner as the control circuit 40 with respect to the negative phase component of the AC power. Accordingly, the discharge of the charge charged in the capacitor 31 through the p-MOS transistor Q2 is similarly prevented.
  • control circuit 40 The operation of the control circuit 40 described above is under ideal conditions in which the potential of each part of the power supply is set to 0 V as described above, but is actually caused by static electricity or the like. In some cases, the reference potential of the control circuit 40 has some potential, and the source potential Vd of the second pMOS transistor Q12 is displaced.
  • the operation of the control circuit 40 in such an initial state is verified, for example, as shown in FIG. 3, when the potential Vd at the point d has a positive potential, the P-MOS transistor of the rectifier circuit 30 A control voltage V cont having a positive value is applied to the gate of Q1 in advance.
  • Vd is set to a predetermined potential (for example, 0v).
  • control circuit 40 controls the control voltage Vcont applied to the gate of the p-MOS transistor Q1 of the rectifier circuit 30 , so that the P-MOS transistor Q1 is turned on at this point. Then, with the conduction of the p-MOS transistor Q1, the drain (c From this point, the output voltage Vout is applied to the control circuit 40, so that the second P-MOS transistor Q12 operates in response to the output voltage Vout, and the control circuit 40 operates.
  • the control circuit 40 when the power supply device is started in a state where a positive potential due to static electricity or the like is applied to the control circuit 40, the control signal Vcont output from the output terminal 44 is temporarily output during the initial operation of the control circuit 40. Since the voltage is returned to 0v, the p-MOS transistor Q1 in the rectifier circuit 30 can be reliably turned on. On the other hand, when the control circuit 40 is charged with a negative potential in the initial state, the control circuit 40 applies the gate of the p-MOS transistor Q 1 of the rectifier circuit 30 to the thin line V d in FIG. A negative potential as shown by is applied in advance as the control voltage V cont.
  • the potential at the point d gradually increases from the time when the P-MOS transistor Q1 is turned on, and the voltage Vc (output voltage Vout) at the point c also increases from the time when the P-MOS transistor Q1 is turned on as shown by a broken line in FIG. >.
  • the transistors Q1 and Q4 After the transistors Q1 and Q4 are turned on, they operate in the same manner as the operation under the ideal conditions described above. Therefore, even when the control circuit 40 is charged with a negative potential due to static electricity or the like, the control circuit 40 can be reliably operated as described above, and the rectifier circuit 30 can be started stably. It is possible to do.
  • the p_MOS transistor Q1 According to the power supply device including the control circuit 40 (50) for controlling the voltage applied to the gate of Q2, the internal power supply smoothed via the capacitor 31 is supplied at the start of the supply of AC power.
  • the control circuit 40 (50) can be reliably operated even at the initial time when no signal is generated, and its full-wave rectified output can be obtained via the rectifier circuit 30. Then, the capacitor 31 is gradually charged by the full-wave rectified output of the rectifier circuit 30, and the smoothed DC voltage can be stably generated through the capacitor 31.
  • the input voltage Vin provided as an AC voltage is lower than the output voltage Vout smoothed by the capacitor 31, and the voltage relationship applied to the source region and the drain region of the p_MOS transistor Q 1 (Q 3) Even if the function is reversed and the function is switched, the p-MOS transistor Q1 (Q3) is forcibly cut off (turned off), so that the p-MOS transistor Q1 (Q3) acts as a discharge path for the capacitor 31. None do. Therefore, the power energy supplied via the coil 20 can be efficiently rectified, and the internal power supply can be generated stably.
  • the control circuit 40 (50) for controlling the operation of the rectifier circuit 30 includes the input voltage Vin obtained from the coil 20 as described above. And the output voltage Vout, which is the DC output of the rectifier circuit 30 and is smoothed by the capacitor 31, operates as a driving power source, and has the magnitude of the input voltage Vin and the output voltage Vout. It is realized as a four-terminal voltage comparison circuit that inverts in response. Therefore, even in a state where no electric charge is stored in the capacitor 31, that is, even when the supply of the power energy (AC power) is started, the control circuit 40 (50) is reliably operated to start the operation of the power supply device. This has the advantage that the circuit configuration is relatively simple.
  • the present invention is not limited to the embodiment described above.
  • the control circuit 40 (50) is used to control the gate voltages of the P-MOS transistors Q1 and Q3 on the positive side, but the n_M ⁇ S transistor on the negative side is controlled.
  • the same configuration can be applied to the case where the gates of Q 2 and Q 4 are controlled.
  • all of the MOS transistors constituting the rectifier circuit 30 can be constituted by p-M ⁇ S transistors or n-MOS transistors. It also has the disadvantage that its rectification efficiency is reduced by half, but it goes without saying that it can be similarly applied to the case where a half-wave rectifier circuit is used instead of a full-wave rectifier circuit.
  • a power supply device that rectifies AC power through a rectifying circuit using a MOS transistor as a rectifying element and smoothes the rectified output through a capacitor, the AC input voltage And a DC output voltage as its driving source, and a control circuit for comparing the AC input voltage and the DC output voltage to gate-control the MOS transistor of the rectifier circuit, that is, a four-terminal voltage comparison circuit. Therefore, reverse discharge from the capacitor via the rectifier circuit is reliably prevented, and the internal power supply can be obtained stably.
  • the structure is simple, and excellent effects such as being suitable for being incorporated into a coupled spherical semiconductor that supplies electric power by electromagnetic induction coupling through a coil are obtained.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Cette invention concerne une unité de fourniture d'énergie alimentée à partir d'un dispositif extérieur par couplage par induction via des bobinages (20), qui fournit une quantité déterminée de courant continu. Cette unité de fourniture d'énergie comprend : un circuit redresseur (30) redressant le courant alternatif, qui est couplé à l'entrée en courant alternatif d'un pont redresseur composé de quatre transistors MOS ; et un condensateur (31) relié à la sortie CC du circuit redresseur qui égalise le courant fourni par ce dernier circuit. De plus, l'unité de fourniture d'énergie comprend des circuits de commande (40, 50) pilotés par la tension d'entrée Vin provenant du bobinage (fourniture de courant alternatif) et par la tension de sortie Vout correspondant à la tension égalisée par le condensateur. Les circuits de commande fonctionnent en opposition selon la comparaison entre les tensions d'entrée et de sortie. Ils coupent à force les transistors MOS qui constituent le pont redresseur si la tension de sortie dépasse la tension d'entrée.
PCT/JP2000/005376 2000-08-10 2000-08-10 Unite de fourniture d'energie WO2002015377A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2000/005376 WO2002015377A1 (fr) 2000-08-10 2000-08-10 Unite de fourniture d'energie
AU2000264741A AU2000264741A1 (en) 2000-08-10 2000-08-10 Power supply unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/005376 WO2002015377A1 (fr) 2000-08-10 2000-08-10 Unite de fourniture d'energie

Publications (1)

Publication Number Publication Date
WO2002015377A1 true WO2002015377A1 (fr) 2002-02-21

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PCT/JP2000/005376 WO2002015377A1 (fr) 2000-08-10 2000-08-10 Unite de fourniture d'energie

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AU (1) AU2000264741A1 (fr)
WO (1) WO2002015377A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2740208B1 (fr) 2011-08-02 2020-06-24 Sew-Eurodrive GmbH & Co. KG Appareil électronique, en particulier tête de transmission, et système de transfert d'énergie sans contact

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08251925A (ja) * 1995-03-10 1996-09-27 Nippon Steel Corp 全波整流回路
JPH09131064A (ja) * 1995-10-16 1997-05-16 Samsung Electron Co Ltd 全波ブリッジ整流回路
JPH10210751A (ja) * 1997-01-22 1998-08-07 Hitachi Ltd 整流回路および半導体集積回路並びにｉｃカード
JPH11161766A (ja) * 1997-11-28 1999-06-18 Mitsui High Tec Inc Ｉｃカード
JPH11187667A (ja) * 1997-12-17 1999-07-09 Seiko Epson Corp 電源装置、発電装置および電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08251925A (ja) * 1995-03-10 1996-09-27 Nippon Steel Corp 全波整流回路
JPH09131064A (ja) * 1995-10-16 1997-05-16 Samsung Electron Co Ltd 全波ブリッジ整流回路
JPH10210751A (ja) * 1997-01-22 1998-08-07 Hitachi Ltd 整流回路および半導体集積回路並びにｉｃカード
JPH11161766A (ja) * 1997-11-28 1999-06-18 Mitsui High Tec Inc Ｉｃカード
JPH11187667A (ja) * 1997-12-17 1999-07-09 Seiko Epson Corp 電源装置、発電装置および電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2740208B1 (fr) 2011-08-02 2020-06-24 Sew-Eurodrive GmbH & Co. KG Appareil électronique, en particulier tête de transmission, et système de transfert d'énergie sans contact
EP2740208B2 (fr) † 2011-08-02 2023-06-07 Sew-Eurodrive GmbH & Co. KG Appareil électronique, en particulier tête de transmission, et système de transfert d'énergie sans contact

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