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WO2002009158A3 - Structure semi-conductrice comportant une jonction a effet tunnel magnetique - Google Patents

Structure semi-conductrice comportant une jonction a effet tunnel magnetique Download PDF

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Publication number
WO2002009158A3
WO2002009158A3 PCT/US2001/022659 US0122659W WO0209158A3 WO 2002009158 A3 WO2002009158 A3 WO 2002009158A3 US 0122659 W US0122659 W US 0122659W WO 0209158 A3 WO0209158 A3 WO 0209158A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
silicon
accommodating buffer
buffer layer
ferromagnetic
Prior art date
Application number
PCT/US2001/022659
Other languages
English (en)
Other versions
WO2002009158A2 (fr
Inventor
Kurt Eisenbeiser
Jeffrey M Finder
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001276980A priority Critical patent/AU2001276980A1/en
Publication of WO2002009158A2 publication Critical patent/WO2002009158A2/fr
Publication of WO2002009158A3 publication Critical patent/WO2002009158A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)

Abstract

L'invention concerne des couches épitaxiales de haute qualité de matériaux ferromagnétiques pouvant être développées sur de grandes tranches de silicium (22), en développant premièrement une couche tampon d'accommodation (24) sur une galette de silicium. La couche tampon d'accommodation est composée d'oxyde monocristallin séparée de la tranche de silicium par une couche interface amorphe (28) d'oxyde de silicium. Ladite couche interface amorphe dissipe la déformation et permet de développer une couche tampon d'accommodation d'oxyde monocristallin de haute qualité. Tout décalage entre la couche tampon d'accommodation et le substrat de silicium sous-jacent est atténué grâce à la couche interface amorphe. Cette technique permet de fabriquer des appareils (96) en utilisant des matériaux ferromagnétiques sur un substrat semi-conducteur monocristallin. Le procédé de la présente invention permet en particulier de réaliser des appareils de jonction à effet tunnel magnétique sur du silicium.
PCT/US2001/022659 2000-07-24 2001-07-18 Structure semi-conductrice comportant une jonction a effet tunnel magnetique WO2002009158A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001276980A AU2001276980A1 (en) 2000-07-24 2001-07-18 Semiconductor structure including a magnetic tunnel junction

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62452600A 2000-07-24 2000-07-24
US09/624,526 2000-07-24

Publications (2)

Publication Number Publication Date
WO2002009158A2 WO2002009158A2 (fr) 2002-01-31
WO2002009158A3 true WO2002009158A3 (fr) 2002-07-18

Family

ID=24502329

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022659 WO2002009158A2 (fr) 2000-07-24 2001-07-18 Structure semi-conductrice comportant une jonction a effet tunnel magnetique

Country Status (3)

Country Link
AU (1) AU2001276980A1 (fr)
TW (1) TW503460B (fr)
WO (1) WO2002009158A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
KR100869326B1 (ko) * 2000-11-30 2008-11-18 에이에스엠 인터내셔널 엔.브이. 자기장치용 박막
US6759081B2 (en) 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
CN111816760B (zh) * 2019-04-11 2023-07-14 上海磁宇信息科技有限公司 一种磁性随机存储器磁性存储单元及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5792569A (en) * 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
WO2001033585A1 (fr) * 1999-11-05 2001-05-10 Oxxel Oxide Electronics Technology, Inc. Synthese et systeme d'essai de magnetoresistance utilisant des echantillons de double perovskite pour preparer un dispositif a magnetoresistance

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5792569A (en) * 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
WO2001033585A1 (fr) * 1999-11-05 2001-05-10 Oxxel Oxide Electronics Technology, Inc. Synthese et systeme d'essai de magnetoresistance utilisant des echantillons de double perovskite pour preparer un dispositif a magnetoresistance

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MARTINEZ BOUBETA C ET AL: "Epitaxial metallic nanostructures on GaAs", SURFACE SCIENCE, vol. 482-485, June 2001 (2001-06-01), Elsevier, Netherlands, pages 910 - 915, XP002191521, ISSN: 0039-6028 *
OBATA T ET AL: "Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers", APPLIED PHYSICS LETTERS, vol. 74, no. 2, 11 January 1999 (1999-01-11), pages 290 - 292, XP000804874, ISSN: 0003-6951 *
PUST L ET AL: "Temperature dependence of the magnetization reversal in Co(fcc)-BN-Co(poly hcp) structures", JOURNAL OF APPLIED PHYSICS, vol. 85, no. 8, 15 April 1999 (1999-04-15), pages 5765 - 5767, XP000902206, ISSN: 0021-8979 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9469899B2 (en) 2005-03-15 2016-10-18 Asm International N.V. Selective deposition of noble metal thin films
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide

Also Published As

Publication number Publication date
AU2001276980A1 (en) 2002-02-05
TW503460B (en) 2002-09-21
WO2002009158A2 (fr) 2002-01-31

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