WO2002008788A2 - Detecteur de rayonnement a duree de vie accrue - Google Patents
Detecteur de rayonnement a duree de vie accrue Download PDFInfo
- Publication number
- WO2002008788A2 WO2002008788A2 PCT/FR2001/002384 FR0102384W WO0208788A2 WO 2002008788 A2 WO2002008788 A2 WO 2002008788A2 FR 0102384 W FR0102384 W FR 0102384W WO 0208788 A2 WO0208788 A2 WO 0208788A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- radiation detector
- scintillator
- detector according
- layer
- titanium
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 47
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 33
- 239000010936 titanium Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000009279 wet oxidation reaction Methods 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 11
- 238000002310 reflectometry Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- UPIZSELIQBYSMU-UHFFFAOYSA-N lanthanum;sulfur monoxide Chemical compound [La].S=O UPIZSELIQBYSMU-UHFFFAOYSA-N 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- -1 rare earth oxysulfides Chemical class 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000001066 destructive effect Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002601 radiography Methods 0.000 description 4
- 239000003570 air Substances 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000013626 chemical specie Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- DQZARQCHJNPXQP-UHFFFAOYSA-N gadolinium;sulfur monoxide Chemical class [Gd].S=O DQZARQCHJNPXQP-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000009607 mammography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
Definitions
- the present invention relates to radiation detectors comprising a photosensitive sensor associated with a radiation converter.
- the fields of application of this type of detector are in particular radiology: radiography, fluoroscopy, mammography, but also non-destructive testing.
- Such radiation detectors are known, for example, from French patent FR 2 605 166 in which a sensor formed from amorphous silicon photodiodes is associated with a converter.
- the photosensitive sensor is generally produced from photosensitive elements in the solid state arranged in a matrix. These elements are not directly sensitive to radiation of very short wavelengths like X-rays or gamma rays.
- the photosensitive sensor is associated with the radiation converter which comprises a layer of a scintillating substance.
- This substance has the property, when excited by such radiation, of emitting radiation of longer wavelength
- the emitted light illuminates the photosensitive elements of the sensor which perform a photoelectric conversion and deliver electrical signals which can be exploited by suitable circuits.
- the converter and the sensor are given substantially the same size and they are optically coupled by proximity.
- the coupling material air or adhesive, has a small thickness compared to the spatial resolution of the assembly in order to degrade the quality of the image delivered by the sensor as little as possible.
- the scintillator is deposited on a support which then forms an entry window that the radiation to be detected must pass through before reaching the scintillator.
- the senor serves as a support for the scintillator which is then in direct and intimate contact with it.
- the sensor generally comprises on the surface a passivation layer intended to protect the photosensitive elements in particular from humidity.
- the scintillator is then covered with a moisture-proof protective sheet which serves as an entry window for the radiation to be detected.
- the photosensitive elements are produced from semiconductor materials, most often monocrystalline silicon for CCD or CMOS type sensors, polycrystalline or amorphous silicon.
- a photosensitive element comprises at least one photodiode, a phototransistor or a photoresistor. These elements are deposited on a substrate, generally a glass slab.
- Cesium iodide doped with sodium or thallium is known for its high absorption of X-rays and for its excellent fluorescence yield. It comes in the form of fine needles which are grown on a support. These needles are substantially perpendicular to this support and they partially confine the light emitted towards the sensor. Their finesse conditions the resolution of the detector.
- Lanthanum and gadolinium oxysulfides are also widely used for the same reasons.
- Cesium iodide and lanthanum oxysulfide in particular have this drawback.
- cesium iodide With regard to cesium iodide, its decomposition gives cesium hydroxide Cs + OH " and free iodine I 2 which can then combine with iodide ions to give the complex l " 3 .
- Bonding optimizes the converter and the sensor separately.
- the converter can receive heat treatments which may be incompatible with the sensor.
- cesium iodide it is evaporated by heating and it is deposited on the support by condensing.
- An annealing operation is then carried out at approximately 300 ° C. in order to achieve an optimum fluorescence yield.
- a compromise must be made on the annealing temperature so as not to damage the sensor.
- Another advantage is that the sensor and the converter are only assembled if they have been successfully tested, which improves the overall manufacturing yield; during direct deposit each time the converter is defective, the sensor is discarded because there is no risk of recycling.
- the thickness of glue for assembly brings some losses in terms of spatial resolution and light collection.
- Direct deposition of the scintillator on the sensor provides the best optical coupling conditions.
- the entry window must meet the following requirements: be as transparent as possible to the radiation to be detected, be moisture-proof and compatible with the chemical species released during the almost inevitable decomposition of the scintillator, absorb or reflect the light produced by the scintillator but not transmit it and have mechanical properties compatible with the manipulations undergone by the detector.
- the entry window When it is desired to have a detector whose resolution is very good, it is advantageous to provide an entry window which absorbs the light emitted by the scintillator towards the rear, that is to say opposite the sensor by report to the scintillator. But we lose sensitivity.
- the scintillator If the scintillator is placed on the entry window and is attached to the sensor, it must withstand without damage the thermal stresses of the deposition and treatment of the scintillator and have a coefficient of expansion of the same order of magnitude as that of the scintillator and that of the sensor (more particularly its substrate). It can also be provided that the window has a low modulus of elasticity, which makes it possible to remove differential stresses between on the one hand the window and the scintillator and on the other hand the window and the sensor (more particularly its substrate). This eliminates the risk of cracking of the scintillator and breakage of the sensor substrate.
- the surface condition must allow, in particular for cesium iodide, the finest possible needle growth, in the most uniform manner possible.
- the fineness of the needles is a quality factor for the resolution of the detector.
- the entrance windows are made of aluminum.
- the transparency of aluminum to the radiation to be detected is excellent, its optical properties are good, the moisture-tightness is perfect, a satisfactory surface condition can be obtained after treatment for depositing the scintillator there.
- its thermal properties and its resistance to corrosion are not satisfactory, which means that the reliability of such a detector cannot be guaranteed under environmental conditions. the most severe such as moist heat. It is desirable that such radiation detectors have a life compatible with the amortization period of radiology or other devices on which they are mounted, this duration being of the order of 10 years.
- the present invention provides a radiation detector with increased life, the entrance window does not have the disadvantages of aluminum windows. It has been found according to the invention that it would be advantageous to replace the aluminum entry window with a titanium-based entry window. More specifically, the radiation detector according to the invention comprises a scintillator made of a material sensitive to wet oxidation, placed between a photosensitive sensor and a radiation entry window, the entry window being made of titanium.
- Such a window fulfills the requirements listed above and its cost is bearable.
- the entry window can be made entirely of pure or alloyed titanium or even comprise a layer of pure or alloyed titanium attached to a layer of a dielectric material absorbing the radiation to be detected as little as possible.
- the layer of dielectric material can be chosen from organic plastic materials, glass, ceramic.
- Organic plastic materials from the category of polymers and in particular polyimide are very suitable.
- the layer of pure or alloyed titanium is located between the layer of dielectric material and the scintillator.
- the entrance window can carry the scintillator which is then attached to the photosensitive sensor.
- the photosensitive sensor which carries the scintillator on which the entry window is attached.
- the scintillator can belong to the family of alkali halides such as cesium iodide or rare earth oxysulfides such as lanthanum oxysulfide for example.
- FIG. 1 is a schematic section of an example of a radiation detector according to the invention.
- FIG. 2 and 3 are schematic sections of alternative radiation detectors according to the invention.
- the radiation sensor bears the reference 1. It comprises a substrate 2 in principle a glass slab, support for photosensitive elements 3. Each photosensitive element 3 is mounted between a line conductor and a conductor column so that it can be addressed. The conductors are not visible in the figure for the purpose of simplification. The photosensitive elements 3 and the conductors are generally covered with a passivation layer 4 intended to protect them from humidity.
- the sensor 1 cooperates with a converter 5 which in the example is optically coupled to the sensor 1 with optical glue 6.
- the converter 5 comprises a scintillator layer 7, represented with a needle structure, deposited on a support 8.
- the support 8 thus carries the scintillator 7.
- This support 8 instead of being made of aluminum as before is made from titanium.
- This support 8 serves as an entry window for X-rays.
- the scintillator 7 belongs to the family of alkali halides such as cesium iodide which is particularly sensitive to wet oxidation, but it could also belong to the family of rare earth oxysulfides some members of which are also not very stable like lanthanum oxysulfide.
- Aluminum is not entirely satisfactory mainly because of its poor resistance to corrosion by the decomposition by-products of the scintillator. Everything would encourage to replace it with a precious metal despite its cost. But in fact, precious metals (gold, silver, platinum) do not would not be satisfactory because their atomic numbers are much too high (47 for silver, 78 for platinum and 79 for gold) and they absorb far too much input radiation (X-rays, gamma rays). The absorption of such radiation by a simple body increases like the cube of its atomic number. The doses and energies of the radiation would have to be increased far too much to be able to use them.
- Titanium is known to be attacked by pure iodine from 25 ° C as indicated in the Treatise on Mineral Chemistry by P. Pascal, Edition MASSON. The inventors have found that titanium has good resistance to corrosion from the decomposition of cesium iodide in moist air, although the decomposition of cesium iodide in humidity produces the element iodine, but the quantities are small.
- Titanium also appears to be resistant to by-products from the decomposition of lanthanum oxysulfide.
- titanium is much higher than that of aluminum (equal to 13) which did not encourage him to choose it.
- its mechanical properties and its average density equal to approximately 4.5 make it possible to use it by adapting its thickness, of the order of 50 to 100 micrometers for example, so that the absorption of the radiation to be detected is suitable.
- a support of about 50 centimeters on a side made of pure titanium or alloy whose thickness is included in the range mentioned above, is rigid enough to be handled without particular precautions.
- the absorption of X-rays amounts to approximately 2 to 5%, which is acceptable.
- the general radiography corresponds to energies between around 30 keV and 150 keV and at doses between 1 and 50 micro Grays.
- a frosted gray or even colored surface that is not very reflective is obtained.
- This treatment can be done with fluoronitric acid.
- Diffuse reflectivity can typically be obtained from 30 to 40% and even from 25 to 60%, only with pure titanium instead of the 60 to 80% obtained with aluminum.
- the support 8 can be made of pure titanium or an alloy, for example
- TA6V which is a widespread titanium alloy. Titanium or its alloys also have the required thermal, elasticity and moisture-tight properties and a satisfactory surface finish can be obtained for the growth of cesium iodide.
- the merit factors of X-ray detectors, known as quantum detection efficiency (DQE acronym) and modulation transfer function, are better with a titanium-based window than with a aluminum-based window.
- FIG. 3 shows an entry window 80 comprising a layer of pure or alloy titanium 81 joined to a layer of dielectric material 82.
- the titanium layer 81 is on the side of the scintillator and it is covered with the layer of dielectric material 82.
- Some organic plastic materials have the advantages of absorbing very little X-rays, even of low energy, and of withstanding high temperatures, of possessing good mechanical and elastic properties, of being easily shaped. Their disadvantage is that they do not provide the required moisture tightness, but this requirement is obtained by titanium.
- Glasses or ceramics containing few heavy elements may also be suitable from the point of view of X-ray absorption in particular.
- the layer 81 of pure or alloyed titanium can be deposited on it by any means known to the specialist, for example spraying, vacuum evaporation, chemical deposition, electrolytic deposition. One can even fix by gluing a sheet of pure titanium or alloy on the dielectric layer.
- the layer of pure or alloyed titanium may have a thickness of a few micrometers.
- the structure as described in FIG. 1 allows better management of the production flows by allowing the separate production of the two elements that are the scintillator 7 on its substrate 8 on the one hand, and the sensor 1 on the other hand.
- the cost of the support 8 as described in FIG. 1 is lower than that of the sensor 1 as described in FIG. 2. This will thus face a lesser loss in the case of a deficient scintillator deposit 7 which would lead to the elimination either of the converter 5 in the case of FIG. 1 or of the sensor 1 and of the scintillator 7 in the case of FIG. 2.
- FIG. 1 can be applied to photosensitive elements made up of sets of several butted elements, such as for example described in the French patents published under the numbers FR 2 758 654 and FR 2 758 656
- the structure of FIG. 2 cannot be applied to such photosensitive assemblies consisting of assemblies of several butted elements, due to the poor dimensional stability of such assemblies at a temperature of 300 ° C., which temperature is necessary for the implementation of the scintillator 7 after its deposition on its support 8 in the case of FIG. 1 or on the sensor 1 in the case of FIG. 2.
- the support 8 as described in Figure 1 (or the input window 80 of Figure 3) is itself (or she) compatible with such a temperature.
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01956627A EP1314051A2 (fr) | 2000-07-21 | 2001-07-20 | Detecteur de rayonnement a duree de vie accrue |
JP2002514428A JP2004505252A (ja) | 2000-07-21 | 2001-07-20 | 耐用期間が伸びた放射線検出器 |
KR10-2003-7000930A KR20030015896A (ko) | 2000-07-21 | 2001-07-20 | 장수명 방사선 검출기 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR00/09634 | 2000-07-21 | ||
FR0009634A FR2812089B1 (fr) | 2000-07-21 | 2000-07-21 | Detecteur de rayonnement a duree de vie accrue |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002008788A2 true WO2002008788A2 (fr) | 2002-01-31 |
WO2002008788A3 WO2002008788A3 (fr) | 2002-07-18 |
Family
ID=8852815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2001/002384 WO2002008788A2 (fr) | 2000-07-21 | 2001-07-20 | Detecteur de rayonnement a duree de vie accrue |
Country Status (6)
Country | Link |
---|---|
US (1) | US20030155515A1 (fr) |
EP (1) | EP1314051A2 (fr) |
JP (1) | JP2004505252A (fr) |
KR (1) | KR20030015896A (fr) |
FR (1) | FR2812089B1 (fr) |
WO (1) | WO2002008788A2 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10119792A1 (de) * | 2001-04-23 | 2002-10-31 | Siemens Ag | Verfahren zur Herstellung einer Leuchtstoffschicht |
DE10119783A1 (de) * | 2001-04-23 | 2002-10-31 | Siemens Ag | Strahlungswandler |
WO2004071782A1 (fr) | 2003-02-17 | 2004-08-26 | Seiko Epson Corporation | Composition liquide |
US7626239B2 (en) | 2002-05-17 | 2009-12-01 | Atmel Grenoble S.A. | Process for the collective fabrication of optical filtering components, and wafer of components |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10132924A1 (de) * | 2001-07-06 | 2003-01-16 | Philips Corp Intellectual Pty | Flacher dynamischer Strahlungsdetektor |
DE10335125B4 (de) * | 2003-07-31 | 2007-09-13 | Siemens Ag | Verfahren zur Herstellung eines Leuchtstoffkörpers für einen Röntgendetektor |
DE102004026842B4 (de) * | 2004-06-02 | 2007-12-27 | Siemens Ag | Röntgendetektor |
DE102005045895B3 (de) * | 2005-09-26 | 2007-06-14 | Siemens Ag | CMOS Röntgenflachdetektor |
JP2007232619A (ja) * | 2006-03-02 | 2007-09-13 | Fujifilm Corp | 放射線像変換パネルおよび放射線像変換パネルの製造方法 |
EP1860463A1 (fr) * | 2006-05-23 | 2007-11-28 | Agfa HealthCare NV | Phosphore de rayonnement d'image ou panneau scintillant |
JP5326200B2 (ja) * | 2006-10-30 | 2013-10-30 | コニカミノルタ株式会社 | シンチレータプレート、シンチレータパネル、及びそれらを用いた放射線フラットパネルディテクター |
US7675040B2 (en) * | 2008-04-23 | 2010-03-09 | Saint-Gobain Ceramics & Plastics, Inc. | Radiation detector device |
DE102010062035B4 (de) * | 2010-11-26 | 2013-08-22 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Szintillator-Fotosensor-Sandwich, Szintillator-Fotosensor-Sandwich und Strahlungsdetektor |
JP2012247402A (ja) * | 2011-05-31 | 2012-12-13 | Fujifilm Corp | 放射線撮影装置 |
US20180335527A1 (en) * | 2017-05-19 | 2018-11-22 | Saint-Gobain Ceramics & Plastics, Inc. | System for fastening a scintillator device, a scintillator thereof, and a method thereof |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5171996A (en) * | 1991-07-31 | 1992-12-15 | Regents Of The University Of California | Particle detector spatial resolution |
US5179284A (en) * | 1991-08-21 | 1993-01-12 | General Electric Company | Solid state radiation imager having a reflective and protective coating |
US5386797A (en) * | 1992-03-27 | 1995-02-07 | Kabushiki Kaisha Toshiba | Single crystal of compound, laser rod, laser oscillator, scintillator, CT scanner, color display and process for preparing the same |
DE69803438T2 (de) * | 1997-02-14 | 2002-07-11 | Hamamatsu Photonics K.K., Hamamatsu | Strahlungsdetektor und verfahren zu seiner herstellung |
US6172371B1 (en) * | 1998-06-15 | 2001-01-09 | General Electric Company | Robust cover plate for radiation imager |
DE60024644T2 (de) * | 1999-04-16 | 2006-08-17 | Hamamatsu Photonics K.K., Hamamatsu | Szintillatorpanel und strahlungsbildsensor |
-
2000
- 2000-07-21 FR FR0009634A patent/FR2812089B1/fr not_active Expired - Fee Related
-
2001
- 2001-07-20 US US10/333,360 patent/US20030155515A1/en not_active Abandoned
- 2001-07-20 JP JP2002514428A patent/JP2004505252A/ja active Pending
- 2001-07-20 EP EP01956627A patent/EP1314051A2/fr not_active Withdrawn
- 2001-07-20 WO PCT/FR2001/002384 patent/WO2002008788A2/fr active Application Filing
- 2001-07-20 KR KR10-2003-7000930A patent/KR20030015896A/ko not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10119792A1 (de) * | 2001-04-23 | 2002-10-31 | Siemens Ag | Verfahren zur Herstellung einer Leuchtstoffschicht |
DE10119783A1 (de) * | 2001-04-23 | 2002-10-31 | Siemens Ag | Strahlungswandler |
US7626239B2 (en) | 2002-05-17 | 2009-12-01 | Atmel Grenoble S.A. | Process for the collective fabrication of optical filtering components, and wafer of components |
WO2004071782A1 (fr) | 2003-02-17 | 2004-08-26 | Seiko Epson Corporation | Composition liquide |
EP2305484A1 (fr) | 2003-02-17 | 2011-04-06 | Seiko Epson Corporation | Composition liquide pour l'impression à jet d'encre |
Also Published As
Publication number | Publication date |
---|---|
EP1314051A2 (fr) | 2003-05-28 |
US20030155515A1 (en) | 2003-08-21 |
WO2002008788A3 (fr) | 2002-07-18 |
FR2812089A1 (fr) | 2002-01-25 |
JP2004505252A (ja) | 2004-02-19 |
KR20030015896A (ko) | 2003-02-25 |
FR2812089B1 (fr) | 2007-11-30 |
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