WO2002008147A1 - Composition ceramique dielectrique comprenant du titanate de baryum et dispositif electronique - Google Patents
Composition ceramique dielectrique comprenant du titanate de baryum et dispositif electronique Download PDFInfo
- Publication number
- WO2002008147A1 WO2002008147A1 PCT/EP2001/008467 EP0108467W WO0208147A1 WO 2002008147 A1 WO2002008147 A1 WO 2002008147A1 EP 0108467 W EP0108467 W EP 0108467W WO 0208147 A1 WO0208147 A1 WO 0208147A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- dielectric
- dielectric ceramic
- composition
- ceramic composition
- electronic device
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 47
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 229910002113 barium titanate Inorganic materials 0.000 title claims abstract description 18
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 title description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims abstract description 12
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 4
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 3
- 229910052745 lead Inorganic materials 0.000 claims abstract description 3
- 238000005245 sintering Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 abstract description 11
- 239000000654 additive Substances 0.000 abstract description 6
- 230000000996 additive effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 229910010253 TiO7 Inorganic materials 0.000 description 1
- 229910007659 ZnSi2 Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
Definitions
- the invention relates to a dielectric ceramic composition
- a dielectric ceramic composition comprising BaTiO 3 as a main component, having a sintering temperature of less than 1300 °C and being free of Bi and Pb.
- the invention also relates to an electronic device comprising a first and a second electrode and a dielectric layer.
- Such a dielectric composition and such an electronic device are known from EP-A-960868.
- the known dielectric composition comprises (Ba Ca Sr Nd Gd) TiO 3 and a silicatitanate as an additive.
- This composition has a relative dielectric constant of about 75 and has a temperature dependence of capacity of less than 0.3% over the temperature range of -55 to 125 °C. Due to the low sintering temperature of less than 1300 °C, preferably less than 1200°C, it is sinterable with base metal electrodes such as nickel.
- the first object is realized in that the composition comprises means for limiting grain growth. It has been found that the dielectric loss decreases with the grain size. Although the dielectric constant of the BaTiO 3 is kept relatively low by limiting the grain size, it is still high enough.
- the relative dielectric constant is more than 8,000.
- the relative dielectric constant is less than 3,000.
- This different behavior of BaTiO 3 that depends on the grain size is explained through different states. If the grain size is relatively large, for instance larger than 10 microns, the BaTiO 3 will have ferro-electric characteristics. In this state each crystal grain contains a domain where spontaneously polarized foci based on permanent dipole moments are oriented in one direction. If the grain size is very small, the BaTiO 3 will be in a state which is not ferro-electric, but comparable to that in common dielectrics. There is thus a size- effect. So, a dielectric ceramic composition can be provided which fulfills the objects of the invention.
- the means for limiting grain growth comprise MnO, Cr 2 O 3 andFe 2 O 3 .
- MnO, Cr 2 O 3 andFe 2 O 3 are effective as grain growth limiter as well.
- the inventors explain the behavior of these elements as grain growth limiters, in that these elements cannot be incorporated in the crystal lattice of the grains formed very well. They appear to be present at the surface of a grain primarily and act as a force against aggregation. If such means are present in an amount of more than 5.0% however, the dielectric loss increases and the dielectric ceramic composition will be unusable. In preferred embodiments, the dielectric loss is less than 0.01
- the temperature dependency of capacity is less than 120 ppm/°C and fulfills the NPO-standard; i.e. has a temperature dependency of dielectric constant of less than 0.5% over the temperature range of -55 to 125 °C.
- the temperature dependency of this kind of ceramics is negative.
- the BaTiO 3 with grain growth limiters has a relative dielectric constant of 1,000-3,000 and a thermal dependency of the dielectric constant of +2,000 ⁇ pm/°C.
- the resulting dielectric ceramic composition will have a relative dielectric constant between 200 and 1000 and a very small thermal dependency of the dielectric constant.
- a Si-containing additive can be used, such as ZnSiTiOs, CaSiTiO 5 , ZnSi 2 TiO 7 , SiO 2 , LiMgSiO y .
- the second object of the invention is realized in an electronic device having a first and a second electrodes and a dielectric layer, wherein that the dielectric layer comprises the dielectric composition of any of the previous Claims.
- the electrodes are preferably capacitor electrodes.
- the electronic device of the invention can be a discrete ceramic multilayer capacitor, a low-temperature cofired ceramic substrate, an array functioning as a ceramic filter. Due to the relatively high dielectric constant these electronic devices with the dielectric composition of the invention are suitable for high-voltage applications.
- the electronic device can also be a multilayer laminate, wherein the dielectric composition is integrated in the polymeric layers as a powder. Due to the powdery form of the ceramics in a polymeric layer with a low dielectric constant, a high dielectric constant of the powder is very important to integrate capacitors into such a multilayer laminate. Thus, the dielectric composition with its relatively high dielectric constant and its low dielectric loss is suitable for that.
- the electronic dielectric layer is a thin film device, such as a passive network or a integrated circuit on a device.
- the dielectric layer can be part of a thin-film capacitor. It can also be a high-K dielectric layer in use as gate dielectrics in a transistor. It is known that on application of a BaTiO 3 - or a (Ca Sr Ti Zr)O 3 based ceramics or any similar ceramics as a thin film, the dielectric constant decreases strongly in comparison to the dielectric constant in bulk. Due to the relatively high dielectric constand and its low dielectric loss the dielectric composition of the invention is suitable for these embodiments of the device of the invention.
- the dielectric ceramic composition according to this invention was prepared as follows: To BaTiO 3 was added an additive such as Cr 2 O 3 , Fe 2 O 3 and MnO, the addition amount being adjusted as appropriate, and the mixture was subjected to wet mixing with water as a solvent for 15 hours in the presence of balls made of yttria-stabilized zirconia, and dried. To the resulting powdery mixture polyvinylalcohol was added to serve as an organic binder, to turn the powder into a mass of particles. The resulting particulate mixture was subjected to uni-directional pressure molding under a press molder exerting a surface pressure of 3 ton/cm 2 , to give disc-shaped pieces each 16.5 mm in diameter and 0.7 mm in thickness.
- an additive such as Cr 2 O 3 , Fe 2 O 3 and MnO
- each sintered ceramic body had its both surfaces coated with silver paste, and fired at 750 °C in the air to have external electrodes formed thereupon.
- Embodiment 2 The dielectric ceramic composition of the invention was used in a ceramic multilayer capacitor.
- BaTiO 3 as the main component, and the additive were subjected to wet mixing with water as a solvent in the presence of balls made of yttri-stabilized zirconia for 20 hours.
- polyvinylalcohol is added as an organic binder, and the yield was subjected to wet mixing to give a ceramic slip.
- the ceramic slip was molded by the doctor blade method into sheets, and rectangular sheets with a thickness of 21 ⁇ m were obtained.
- Ni-based electroconductive paste was printed on the ceramic green sheet, to form an internal electrode thereupon.
- a plurality of green sheets were placed one over another so that their ends in contact with the electroconductive paste layer appeared alternately, to give a laminated body.
- This laminated body was sintered in a reductive atmosphere of 1% H 2 plus 99% N 2 at 1150 °C for two hours. After sintering, the lateral surfaces of the ceramic sintered body were coated with silver paste. The body was fired in the air at 750 °C to form external electrodes connected electrically with internal electrodes.
- the ceramic multilayer capacitor obtained as above has an external size of 3.2 mm in width, 1.6 mm in length and 0.5 mm in thickness. Each dielectric ceramic layer between adjacent internal electrodes has a thickness of 10 ⁇ m, and the total number of effective dielectric ceramic layers was five.
- the feature characteristic with the capacitor based on the dielectric ceramic composition obtained as above includes the following: a relative dielectric constant of 900 to 3000, a dielectric loss of 0.003 to 0.01.
- a 2 mol% Cr 2 O 3 is added to BaTiO 3 to give a BaTiO 3 -based ceramic.
- This ceramic has a relative dielectric constant of 800, a thermal dependence of dielectric constant of + 1500 ppm/°C and a dielectric loss (tan ⁇ ) of 0.01.
- a (Cao. 297 Sro. 693 )(Tio. 97 Zro.o 3 )O 3 based ceramic has a relative dielectric constant of 220, a thermal dependency of dielectric constant of - 1820 ppm/°C and a dielectric loss of 0.0001.
- the two components are briefly subjected to wet mixing with water as a solvent in the presence of balls of yttria-stabilized zirconia, and dried.
- polyvinylalcohol to serve as an organic binder.
- the resulting particulate mixture is subjected to uni-directional pressure molding under a press molder extering a surface pressure of 3 ton/cm , to give disc shaped pieces. These pieces are subjected to liquid-phase sintering at a temperature of 1150 °C for two hours in a reductive atmosphere of 1%H 2 and 99% N 2 , to give ceramic sintered bodies.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Cette invention concerne une composition céramique diélectrique comprenant du BaTiO3 comme composant principal et un limiteur de croissance du grain comme additif, alors qu'elle ne contient ni Bi ni Pb et qu'elle est frittable à une température inférieure à 1300 °C. Les limiteurs de croissance du grain sont constitués de préférence par du Cr2O3, MnO et Fe2O3. La céramique obtenue présente une constante diélectrique relative de 900-3000 et une perte diélectrique inférieure à 0,02, de préférence inférieure à 0,01. Cette composition céramique diélectrique peut être employée de manière très appropriée dans un condensateur et un élément capacitif.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000225559A JP2002037667A (ja) | 2000-07-26 | 2000-07-26 | 誘電体磁器組成物 |
| JP2000/225559 | 2000-07-26 | ||
| JP2000/225558 | 2000-07-26 | ||
| JP2000225558A JP2002037663A (ja) | 2000-07-26 | 2000-07-26 | 誘電体磁器組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002008147A1 true WO2002008147A1 (fr) | 2002-01-31 |
Family
ID=26596716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2001/008467 WO2002008147A1 (fr) | 2000-07-26 | 2001-07-20 | Composition ceramique dielectrique comprenant du titanate de baryum et dispositif electronique |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2002008147A1 (fr) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8638544B2 (en) | 2010-08-06 | 2014-01-28 | Samsung Electro-Mechanics Co., Ltd. | Reduction-resistant dielectric composition and ceramic electronic component including the same |
| US8773840B2 (en) | 2009-12-11 | 2014-07-08 | Murata Manufacturing Co., Ltd. | Monolithic ceramic electronic component |
| US11475899B2 (en) | 2018-01-23 | 2022-10-18 | Cirrus Logic, Inc. | Speaker identification |
| US11515875B2 (en) | 2019-03-29 | 2022-11-29 | Cirrus Logic, Inc. | Device comprising force sensors |
| US11694695B2 (en) | 2018-01-23 | 2023-07-04 | Cirrus Logic, Inc. | Speaker identification |
| US11704397B2 (en) | 2017-06-28 | 2023-07-18 | Cirrus Logic, Inc. | Detection of replay attack |
| US11714888B2 (en) | 2017-07-07 | 2023-08-01 | Cirrus Logic Inc. | Methods, apparatus and systems for biometric processes |
| US11735189B2 (en) | 2018-01-23 | 2023-08-22 | Cirrus Logic, Inc. | Speaker identification |
| US11748462B2 (en) | 2018-08-31 | 2023-09-05 | Cirrus Logic Inc. | Biometric authentication |
| US11755701B2 (en) | 2017-07-07 | 2023-09-12 | Cirrus Logic Inc. | Methods, apparatus and systems for authentication |
| US11829461B2 (en) | 2017-07-07 | 2023-11-28 | Cirrus Logic Inc. | Methods, apparatus and systems for audio playback |
| US12026241B2 (en) | 2017-06-27 | 2024-07-02 | Cirrus Logic Inc. | Detection of replay attack |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB638834A (en) * | 1947-10-17 | 1950-06-14 | Nat Lead Co | Improvements relating to ceramic dielectric materials and methods of manufacturing the same |
| GB809440A (en) * | 1955-04-27 | 1959-02-25 | Plessey Co Ltd | Improvements in or relating to dielectrics |
| US4222885A (en) * | 1977-08-16 | 1980-09-16 | U.S. Philips Corporation | Method of producing a dielectric with perowskite structure and containing a copper oxide |
| US4764494A (en) * | 1985-04-26 | 1988-08-16 | Asahi Kasei Kogyo Kabushiki Kaisha | Dielectric ceramic compositions and process for producing the same |
| JPH06349673A (ja) * | 1993-06-14 | 1994-12-22 | Matsushita Electric Ind Co Ltd | 積層セラミックコンデンサの製造方法 |
| EP0992469A2 (fr) * | 1998-09-28 | 2000-04-12 | Murata Manufacturing Co., Ltd. | Composition céramique diélectrique et condensateur céramique monolithique |
-
2001
- 2001-07-20 WO PCT/EP2001/008467 patent/WO2002008147A1/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB638834A (en) * | 1947-10-17 | 1950-06-14 | Nat Lead Co | Improvements relating to ceramic dielectric materials and methods of manufacturing the same |
| GB809440A (en) * | 1955-04-27 | 1959-02-25 | Plessey Co Ltd | Improvements in or relating to dielectrics |
| US4222885A (en) * | 1977-08-16 | 1980-09-16 | U.S. Philips Corporation | Method of producing a dielectric with perowskite structure and containing a copper oxide |
| US4764494A (en) * | 1985-04-26 | 1988-08-16 | Asahi Kasei Kogyo Kabushiki Kaisha | Dielectric ceramic compositions and process for producing the same |
| JPH06349673A (ja) * | 1993-06-14 | 1994-12-22 | Matsushita Electric Ind Co Ltd | 積層セラミックコンデンサの製造方法 |
| EP0992469A2 (fr) * | 1998-09-28 | 2000-04-12 | Murata Manufacturing Co., Ltd. | Composition céramique diélectrique et condensateur céramique monolithique |
Non-Patent Citations (1)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN vol. 1995, no. 03 28 April 1995 (1995-04-28) * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8773840B2 (en) | 2009-12-11 | 2014-07-08 | Murata Manufacturing Co., Ltd. | Monolithic ceramic electronic component |
| US8638544B2 (en) | 2010-08-06 | 2014-01-28 | Samsung Electro-Mechanics Co., Ltd. | Reduction-resistant dielectric composition and ceramic electronic component including the same |
| US12026241B2 (en) | 2017-06-27 | 2024-07-02 | Cirrus Logic Inc. | Detection of replay attack |
| US11704397B2 (en) | 2017-06-28 | 2023-07-18 | Cirrus Logic, Inc. | Detection of replay attack |
| US11755701B2 (en) | 2017-07-07 | 2023-09-12 | Cirrus Logic Inc. | Methods, apparatus and systems for authentication |
| US11714888B2 (en) | 2017-07-07 | 2023-08-01 | Cirrus Logic Inc. | Methods, apparatus and systems for biometric processes |
| US11829461B2 (en) | 2017-07-07 | 2023-11-28 | Cirrus Logic Inc. | Methods, apparatus and systems for audio playback |
| US12135774B2 (en) | 2017-07-07 | 2024-11-05 | Cirrus Logic Inc. | Methods, apparatus and systems for biometric processes |
| US12248551B2 (en) | 2017-07-07 | 2025-03-11 | Cirrus Logic Inc. | Methods, apparatus and systems for audio playback |
| US11694695B2 (en) | 2018-01-23 | 2023-07-04 | Cirrus Logic, Inc. | Speaker identification |
| US11735189B2 (en) | 2018-01-23 | 2023-08-22 | Cirrus Logic, Inc. | Speaker identification |
| US11475899B2 (en) | 2018-01-23 | 2022-10-18 | Cirrus Logic, Inc. | Speaker identification |
| US11748462B2 (en) | 2018-08-31 | 2023-09-05 | Cirrus Logic Inc. | Biometric authentication |
| US11515875B2 (en) | 2019-03-29 | 2022-11-29 | Cirrus Logic, Inc. | Device comprising force sensors |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102115523B1 (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
| JP7060213B2 (ja) | 誘電体磁器組成物及びこれを含む積層セラミックキャパシタ | |
| KR100307681B1 (ko) | 유전체 세라믹 조성물, 적층 세라믹 커패시터 및 적층 세라믹 커패시터의 제조방법 | |
| CN109585164B (zh) | 多层陶瓷电容器 | |
| US6385035B1 (en) | Dielectric ceramic composition and monolithic ceramic component | |
| CN102115329A (zh) | 介电陶瓷组合物及具有该组合物的多层陶瓷电容器 | |
| JP3341672B2 (ja) | 圧電セラミック素子の製造方法 | |
| US20130083450A1 (en) | Dielectric composition and ceramic electronic component including the same | |
| JP2000143341A (ja) | 誘電体セラミック組成物及び積層セラミック部品 | |
| KR20190124632A (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
| WO2002008147A1 (fr) | Composition ceramique dielectrique comprenant du titanate de baryum et dispositif electronique | |
| CN103449812B (zh) | 电介质陶瓷组合物以及电子元件 | |
| CN105669192A (zh) | 陶瓷介电组合物以及包含其的多层陶瓷电容器 | |
| US20170008806A1 (en) | Dielectric ceramic composition and multilayer ceramic capacitor containing the same | |
| CN105016724B (zh) | 介电陶瓷组合物和含有该组合物的多层陶瓷电容器 | |
| CN1064940C (zh) | 压电陶瓷组合物 | |
| US20140293502A1 (en) | Dielectric ceramic composition and multi-layer ceramic capacitor comprising the same | |
| KR102061508B1 (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
| JP3317246B2 (ja) | 複合セラミック及び複合セラミック素子 | |
| JP3678073B2 (ja) | 誘電体セラミック組成物及び積層セラミック部品 | |
| JP2915217B2 (ja) | 誘電体磁器及び磁器コンデンサ | |
| KR102184560B1 (ko) | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 | |
| JP2002037663A (ja) | 誘電体磁器組成物 | |
| US20230154681A1 (en) | Multilayer ceramic electronic device and manufacturing method of the same | |
| US20240249884A1 (en) | Dielectric composition for multilayered ceramic capacitor,multilayered ceramic capacitor comprising same, and manufacturing method for capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): US |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
| 122 | Ep: pct application non-entry in european phase | ||
| ENP | Entry into the national phase |
Ref document number: 2003130644 Country of ref document: RU Kind code of ref document: A Format of ref document f/p: F |