WO2002003452A1

WO2002003452A1 - Apparatus for producing and inspecting semiconductor

Info

Publication number: WO2002003452A1
Application number: PCT/JP2001/005564
Authority: WO
Inventors: Yasuji Hiramatsu; Yasutaka Ito
Original assignee: Ibiden Co., Ltd.
Priority date: 2000-07-03
Filing date: 2001-06-27
Publication date: 2002-01-10
Also published as: JP2002083848A

Abstract

An apparatus for producing and inspecting a semiconductor in which elevation of temperature or heat insulation can be carried out efficiently even when a resistance heater is heated and cooling can be carried out efficiently even when the temperature is lowered. In the apparatus for producing and inspecting a semiconductor, a ceramic substrate (21) having a conductor layer (22) formed internally or on the surface is placed in a supporting container (12) having planar bodies (14, 15). The planar bodies (14, 15) have a surface roughness Ra=20 νm or less based on JIS B 0601.

Description

Semiconductor manufacturing and inspection equipment

Technical field

The present invention relates to a semiconductor manufacturing / inspection apparatus mainly used for manufacturing or inspecting a semiconductor, such as a hot plate unit, an electrostatic chuck, and a wafer prober. Landscape technology

Conventionally, heaters and wafer probers using metal base materials such as stainless steel and aluminum alloys have been used in semiconductor manufacturing / inspection equipment including etching equipment and chemical vapor deposition equipment. Was.

However, such a metal heater has the following problems.

First, since it is made of metal, the thickness of the heater plate must be as thick as about 15 mm. This is because, in a thin metal plate, warpage, distortion, and the like occur due to thermal expansion caused by heating, and the silicon wafer placed on the metal plate is damaged or tilted. However, when the thickness of the heater plate is increased, there is a problem that the weight of the heater increases and the heater becomes bulky.

In addition, the heating temperature is controlled by changing the voltage or current applied to the heating element.However, the thickness of the metal plate causes the temperature of the heater plate to quickly change with changes in voltage or current. There was also a problem that it was difficult to control the temperature without following.

Thus, for example, Japanese Patent Application Laid-Open No. 4-324276 proposes a hot plate using aluminum nitride, which is a non-oxide ceramic having high thermal conductivity and high strength, as a substrate. Have been.

Usually, when a hot plate is formed using a ceramic substrate on which such a resistance heating element is formed, a ceramic substrate having a resistance heating element is disposed in a cylindrical support container having an insole plate. It functions as a hot plate by connecting a resistance heating element to an external power supply. Summary of the Invention

However, when the hot plate unit having such a configuration is energized, When the temperature of the ceramic substrate was raised by generating heat from the anti-heating element, the temperature of the ceramic substrate did not quickly follow the amount of heat generated by the resistance heating element, and the temperature of the ceramic substrate did not rise efficiently in some cases. This was particularly noticeable in a ceramic substrate having a resistance heating element provided on the bottom surface of the ceramic substrate.

In addition, when maintaining a constant temperature, the required amount of power was sometimes increased.

Furthermore, when cooling the ceramic substrate once heated, usually, the ceramic substrate is cooled by introducing a refrigerant into the space formed by the support container, the ceramic substrate, and the midsole plate and circulating it. The hot plate unit had low cooling efficiency.

In view of the problems described above, the present inventors have conducted intensive studies with the aim of obtaining a hot plate unit having excellent heating efficiency and cooling efficiency of a ceramic substrate. One of the causes of defects such as temperature efficiency and cooling efficiency is that the surface roughness of the ceramic plate side of the plate-shaped body provided under the ceramic substrate is large, and the surface roughness is not more than a certain value. The present inventors have found that the temperature rise efficiency and the cooling efficiency of a semiconductor manufacturing / inspection apparatus having a heater such as a hot plate unit can be improved, and the present invention has been completed.

Further, it has been found that such an effect is not limited to the case where the ceramic substrate is used as the heating substrate, but is the same when the metal substrate is used as the heating substrate.

That is, the present invention relates to a semiconductor manufacturing / inspection apparatus in which a heating substrate such as a ceramic substrate having a conductor formed on the surface or inside thereof is disposed in a supporting container having a plate-like body,

A semiconductor manufacturing / inspection apparatus, characterized in that the plate-like body has a surface roughness based on JIS B 0601 of Ra = 20 / zm or less.

Semiconductor manufacturing and inspection equipment such as hot plate units generate heat when current is applied to a resistance heating element provided on a heating substrate such as a ceramic substrate or a metal substrate (hereinafter also referred to as a “ceramic substrate or the like”) to generate heat. By propagating through the ceramic substrate or the like and reaching the heating surface, an object to be heated such as a silicon wafer placed or separated from the heating surface or supported thereon can be heated. However, the heat released from the resistance heating element is naturally transmitted to the opposite side of the heating surface of the ceramic substrate or the like. Since the heat released in this direction is not used for heating the ceramic substrate or the like, the efficiency of raising the temperature of the ceramic substrate or the like is not so good. For this reason, a plate-like body is provided on the opposite side of the heating surface of a ceramic substrate or the like to reflect the heat emitted from the resistance heating element to improve the thermal efficiency during temperature rise or heating.

Usually, the wiring and external devices provided below the ceramic substrate and the like are vulnerable to heat. Therefore, this plate-shaped member also has a purpose of protecting these wirings and external devices from heat.

When the surface roughness of the plate-like body on the side of the heating substrate such as a ceramic substrate is large, the efficiency of temperature rise of the ceramic substrate or the like is reduced. This is because the heat emitted from the resistance heating element is diffusely reflected by the midsole, reducing the reflectivity of the heat rays, reducing the amount of heat reflected back to the ceramic substrate, etc., and increasing the amount of heat dissipation However, it is considered that the heating efficiency and the heat retention efficiency are reduced.

Similarly, if the surface roughness of the surface of the plate-like body on the side of the heating substrate such as a ceramic substrate is large, the cooling efficiency of a hot plate cut or the like is not very good. This is because when introducing and circulating a coolant to cool a semiconductor manufacturing / inspection device such as a hot plate unit, a turbulence occurs in the airflow of the coolant circulating near the surface of the plate-like body. This turbulence in the airflow hinders the circulation of the entire refrigerant, and it is not possible to uniformly cool the ceramic substrate and the like, which may reduce the cooling efficiency of the semiconductor manufacturing and inspection equipment.

However, as described above, the semiconductor manufacturing / inspection apparatus of the present invention has a surface roughness of Ra = 20 μm or less based on JISB 0601 of the plate-like body. Good reflection of the heat rays from the resistance heating element and low temperature drop due to heat radiation such as radiant cooling, so it has excellent heat-up efficiency such as hot plate jet and heat retention efficiency when maintaining a constant temperature. Becomes

In addition, when cooling the semiconductor manufacturing / inspection equipment by introducing a refrigerant after the temperature has been raised once, the turbulence of the air current and liquid flow of the refrigerant near the surface of the plate-like body hardly occurs. It can be circulated, and the cooling efficiency of semiconductor manufacturing and inspection equipment becomes excellent.

As described above, the refrigerant may be either a liquid or a gas. It is desirable to use a gas from the viewpoint of preventing short circuit. Examples of the gas include an inert gas such as nitrogen, argon, helium, and gas, and air. Examples of the liquid include water and ethylene glycol. In the semiconductor manufacturing / inspection apparatus of the present invention, it is preferable that the plate-like body has a surface roughness based on JISB 0601 of Ra = 0.05 to 20.

Further, it is desirable that an opening is formed in the plate-like body. By providing the openings, the cooling medium can be discharged well, the heat capacity can be reduced, and the cooling rate can be improved.

The opening preferably has a diameter of 1 to 100 mm. If the thickness is less than 1 mm, it is difficult to discharge the cooling medium satisfactorily. If the thickness exceeds 100 mm, the effect of shielding the heat from the heater is greatly reduced.

The aperture ratio is preferably 3% or more. If the aperture ratio is less than 3%, the heat capacity becomes too large to shorten the cooling time.

It is desirable that a protrusion or a depression is formed in the plate-like body. By forming the projections and depressions, distortion of the plate-like body can be eliminated. If the plate is distorted, the support container itself will be distorted, and as a result, the ceramic substrate will also be distorted.

If the ceramic substrate or the like is distorted, the distance between the semiconductor wafer and the heating substrate such as the ceramic substrate becomes uneven, and the semiconductor wafer cannot be heated uniformly, or the ceramic substrate or the like does not adhere to the semiconductor wafer. Again, uniform heating of the semiconductor wafer becomes difficult. Furthermore, when the plate is distorted, the reflected heat is unequally applied to the ceramic substrate and the like, so that the semiconductor wafer cannot be uniformly heated. It is desirable that the projections and depressions are arranged in a matrix like a grid.

Needless to say, the definition of the surface roughness of the plate-like body in the present invention relates to a portion without such projections, depressions, and openings. This is because the turbulence of the air flow of the refrigerant and the liquid flow is generated by the surface contact between the refrigerant and the plate-like body, and the local protrusions and dents do not significantly affect the turbulence of the air flow. Also, since the refrigerant fluid is discharged from the opening, it does not contribute to the turbulence of the air flow. The height of such projections and the depth of the depressions are desirably 5 mm or less. If the depressions and projections are too large, the plate It is because it goes out. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a plan view schematically showing a hot plate unit which is an example of the semiconductor manufacturing / inspection apparatus of the present invention.

-Fig. 2 is a longitudinal sectional view of the hot plate unit shown in Fig. 1.

FIG. 3 is a partially enlarged cross-sectional view schematically showing an example of a method of connecting an end of a resistance heating element to an external terminal on a ceramic substrate having a resistance heating element formed therein.

FIG. 4 is a partially enlarged cross-sectional view schematically showing an example of a method of connecting an end of a resistance heating element to an external terminal on a ceramic substrate having a resistance heating element formed therein.

FIG. 5 is a partially enlarged cross-sectional view schematically showing an example of a method of connecting an end of a resistance heating element to an external terminal on a ceramic substrate having a resistance heating element formed therein.

In FIG. 6, (a) is a longitudinal sectional view schematically showing a ceramic substrate constituting the electrostatic chuck according to the present invention, and (b) is a cross-sectional view of the electrostatic chuck shown in (a). FIG. 3 is a sectional view taken along line A.

FIG. 7 is a horizontal sectional view schematically showing an example of an electrostatic electrode embedded in the electrostatic chuck according to the present invention.

FIG. 8 is a horizontal sectional view schematically showing another example of the electrostatic electrode embedded in the electrostatic chuck.

FIG. 9 is a cross-sectional view schematically showing a ceramic substrate constituting a wafer prober which is an example of the semiconductor manufacturing / inspection apparatus of the present invention.

FIG. 10 is a plan view schematically showing the ceramic substrate shown in FIG.

FIG. 11 is a cross-sectional view of the ceramic substrate taken along line AA of FIG.

In FIG. 12, (a) to (d) are cross-sectional views schematically showing a method of manufacturing a ceramic substrate constituting a hot plate cut as an example of the semiconductor manufacturing / inspection apparatus of the present invention. .

In FIG. 13, (a) is a cross-sectional view schematically showing another embodiment of a hot plate unit which is an example of a semiconductor manufacturing / inspection apparatus of the present invention, and (b) is a cross section of a hot plate unit. It is a perspective view which shows typically the bottom plate which comprises a support container. FIG. 14 is an explanatory diagram showing a combination of a micrograph showing the surface of the midsole plate with the depression formed therein and a graph showing the result of measuring the surface shape with a laser displacement meter. FIG. 15 is an explanatory diagram showing a combination of a micrograph showing the surface of the midsole plate and a graph showing the result of measuring the surface shape with a laser displacement meter.

FIG. 16 is an explanatory diagram showing a combination of a micrograph showing the surface of the midsole plate and a graph showing the result of measuring the surface shape with a laser displacement meter. Explanation of reference numerals

2 Chuck top conductor layer

'' 6 Guard electrode

7 Ground electrode

8 grooves

9 Suction port

1 1 Insulation ring

1 2 Support vessel

1 3, 4 3 External terminal

1 4 Bottom plate

14a through hole

1 5 Middle bottom plate '1 7 Lead wire

1 8 Wiring

1 9 Guide tube

20 Ceramic heater

2 1, 3 1, 6 1, 7 1, 8 1 Ceramic substrate

2 1a, 3 1a heating surface

2 1 b, 3 1 b Bottom

22, 42, 5 1, 6 6 Resistance heating element

24, 44 Bottom hole

25, 4 5 Through hole 2 7 Cooling pipe

2 8 Temperature sensor

2 9 Silicon wafer

3 7, 4 8

3 8, 49, 6 8 Snoray Hall

6 2, 7 2, 8 2a, 8 2b Chuck positive electrode electrostatic layer

6 3, 7 3, 8 3 a, 8 3 b Chuck negative electrode electrostatic layer

6 4 Dielectric film

1 3 0 Connecting member

1 40 Hold-down bracket Detailed disclosure of the invention

The semiconductor manufacturing / inspection apparatus of the present invention is a semiconductor manufacturing / inspection apparatus in which a heating substrate such as a ceramic substrate having a conductor formed on its surface or inside is disposed in a supporting container having a plate-like body. ,

It is characterized in that the plate-like body has a surface roughness based on JIS B 0601 of Ra = 20 μm or less.

The plate-shaped body may be a bottom plate of a support container, or may be an intermediate bottom plate disposed between the bottom plate and the ceramic substrate.

Hereinafter, the semiconductor manufacturing and inspection apparatus of the present invention will be described using a ceramic substrate as a heating substrate and an insole plate as an example, but the present invention is not limited to this.

As described above, when a ceramic substrate is not used, a metal substrate is used. Specifically, it is desirable to use a metal substrate made of at least one metal selected from aluminum, copper, stainless steel, and iron.

For the metal substrate, use a screw or the like to fix the heat-generating wire with an insulating seal, or for some V, use a heating element that is sandwiched between silicon wrappers and fixed to the metal substrate with a screw or the like. it can.

First, a semiconductor manufacturing / inspection apparatus of the present invention will be described with reference to the drawings. Only the resistance heating element is provided on the ceramic substrate constituting the semiconductor manufacturing and inspection apparatus of the present invention. When provided, it has a function as a hot plate, and can heat an object to be heated such as a silicon wafer to a predetermined temperature.

FIG. 1 is a bottom view schematically showing an example of a hot plate unit which is an embodiment of a semiconductor manufacturing and inspection apparatus according to the present invention. FIG. 2 is a vertical sectional view schematically showing the hot plate unit. FIG.

The ceramic substrate 21 is formed in a disk shape, and the resistance heating elements 22 are formed in a concentric pattern on the bottom surface of the ceramic substrate 21. The resistance heating elements 22 are connected such that double concentric circles close to each other form a single line as a set of circuits.

A plurality of through holes 25 for inserting lifter pins used for carrying a silicon wafer, etc. are formed in a portion near the center, and communicate with the through holes 25 immediately below the through holes 25. A guide tube 19 is provided, and a through hole communicating with these is formed in the bottom plate 14 of the support container 12.

On the other hand, a bottomed hole 24 for inserting a temperature measuring element 28 such as a thermocouple is formed on the bottom surface of the ceramic substrate 21, and a wiring 18 is led out from the temperature measuring element 28 to form a bottom plate 1. 4 through hole 14a is drawn out to the outside.

The ceramic substrate 21 having such a configuration is fitted into the cylindrical support container 12 via the heat insulating ring 11, and is connected to the heat insulating ring by the connecting members 130 such as bolts and the holding metal fittings 140. It is pressed down and fixed to the support container 12 by this. An intermediate bottom plate 15 is attached to the middle of the support container 12, and a bottom plate 14 is attached to the lower portion of the support container 12.

Note that the support container 12 and the bottom plate 14 may be formed integrally.

In the hot plate unit 20 shown in FIGS. 1 and 2, the ceramic substrate 21 is fitted into the support container 12 via the heat insulating ring 11, but the ceramic substrate is placed on the support container. A hot plate unit may be configured by using a connecting member such as a bolt or the like and fixing it to the upper surface of the supporting container via a heat insulating member or the like. On the other hand, an external terminal 13 having a T-shaped cross section is connected to the end 22 a of the resistance heating element 22, and this external terminal 13 is drawn out of a through hole provided in the inner bottom 扳 15, It is connected to the lead wire 17 via the socket 16 and this lead wire 17 is connected to the bottom plate 14 It is drawn out from the through-hole 1 4 a, a power supply _c connection (not shown) is attained supporting container 1 2 of the bottom plate 1 a refrigerant inlet pipe 2 7 4 are fixed, the supporting container 1 2 Cooling air can be flowed into the interior. In addition, a through hole is formed in the middle bottom plate 15 so as not to obstruct the guide tube 19 and the refrigerant introduction tube 29 provided in the bottom plate 14.

The ceramic substrate 21 is provided with a plurality of through holes 25 through which lifter pins are inserted. By supporting the silicon wafer with the plurality of lifter pins, a certain distance from the upper surface of the ceramic substrate is maintained. The silicon wafer can be placed in a state where the silicon wafer is separated, and heating can be performed.

Further, a through hole and a concave portion are formed in the ceramic substrate 21, and a pin having a spike or a hemispherical tip is slightly inserted into and fixed to the through hole or the like in a state of protruding from the ceramic substrate 21. By placing the silicon wafer on the top, the silicon wafer can be placed with a certain distance from the upper surface of the ceramic substrate 21.

Next, the midsole plate constituting the semiconductor manufacturing / inspection apparatus of the present invention will be described in detail. -In the semiconductor manufacturing / inspection apparatus of the present invention, the midsole plate reflects heat radiated from the resistance heating element to improve the heat retaining effect of the ceramic substrate, or to provide wiring and external devices provided below the ceramic substrate. It is formed for the purpose of so-called heat shielding, which protects the heat from heat.

When the midsole plate 15 is not subjected to any treatment, the surface is not a uniform flat surface but irregularities are formed, and the irregularities usually have a size of more than 20 μπι in Ra. Therefore, the following inconvenience occurs.

However, in the semiconductor manufacturing / inspection apparatus 10 of the present invention, the surface roughness based on JISB 0601 (hereinafter, also simply referred to as surface roughness) of the midsole plate 15 is reduced by polishing or the like. a = 20 m or less. —

Therefore, the midsole plate 15 reflects heat rays from the resistance heating element well, and the ceramic substrate 11 has excellent heat-up efficiency and heat-retention efficiency. In addition, the refrigerant can be circulated satisfactorily even after cooling after the temperature rise, and the cooling efficiency of the ceramic substrate 11 is excellent. It becomes Also, wiring can be fixed to the midsole plate.

If the surface roughness Ra of the midsole plate 15 exceeds 20 μin, the heat radiated from the resistance heating element 22 is irregularly reflected on the surface of the midsole plate 15 and the heat ray reflectance is reduced. However, as the radiant heat increases, the heating efficiency and the heat retention efficiency of the ceramic substrate 11 decrease. Further, since the airflow of the refrigerant introduced from the refrigerant introduction pipe 27 is disturbed near the surface of the midsole plate, the ceramic substrate 11 cannot be uniformly cooled, and the cooling efficiency of the ceramic substrate 11 decreases. .

The same adjustment of the surface roughness may be performed on the bottom plate. Also in this case, by adjusting the surface roughness of the bottom plate, the same effect as when adjusting the surface roughness of the midsole plate 15 is produced. When the surface roughness of the bottom plate is adjusted, in order for the effects of the present invention to be produced, it is desirable that the middle bottom plate does not exist.

It is desirable that the surface roughness of the midsole plate 15 (bottom plate) be adjusted to Ra = 0.05 to 20 m. Even if the surface roughness Ra of the midsole plate 15 is less than 0.05 / zm, no particular inconvenience occurs with respect to the temperature rise characteristics and the like. In order to further reduce the surface roughness, a long polishing process is required, which is disadvantageous in terms of time and economy.

It is desirable that the surface roughness of the midsole plate 15 (bottom plate) be adjusted to a range of 500 μπα or less in Rma. This is because if the surface roughness Rmax of the midsole plate 15 exceeds 500 m, the flow of the fluid tends to be turbulent, and the temperature falling time tends to vary.

FIGS. 15 and 16 are explanatory diagrams showing a combination of a micrograph showing the surface of the midsole plate and a graph showing the surface state measured by a key displacement laser displacement meter. The insole shown in Fig. 15 has Rmax = 0.8 μm and Ra = 0.1 μm, and the insole shown in Fig. 16 has Rmax = 3.8 μm and Ra = 0.6. μκι. The midsole plate shown in FIG. 15 has a substantially mirror surface, and the midsole plate shown in FIG. 16 has a slightly rough surface.

The method for adjusting the surface roughness of the midsole plate 15 (bottom plate) to 20 μπι or less is not particularly limited. For example, the surface of the midsole plate 15 (bottom plate) is polished using a diamond grindstone of # 50 to # 800. Mirror treatment using diamond abrasive grains Method and the like.

The material forming the middle bottom plate 15 (bottom plate) is not particularly limited, and examples thereof include metal, resin, and ceramic.

The metal is not particularly limited, and includes, for example, aluminum, SUS, copper, nickel, and the like. When the midsole plate 15 is formed of such a metal material, it is desirable that a film of a noble metal such as gold or silver be formed on the surface on the ceramic substrate side. This is because the surface reflects heat rays and the like more efficiently by forming a noble metal film.

The method for forming the noble metal film of gold, silver, or the like on the metal surface is not particularly limited, and examples thereof include electrolytic plating, electroless plating, and sputtering. The resin is not particularly limited, and examples thereof include a heat-resistant resin such as a polyimide resin, a polybenzoimidazole resin, and a fluororesin. Among these resins, polyimide resins are desirable. Thermal stability is extremely high, and mechanical and electrical properties are also excellent.

The ceramic is not particularly limited, and examples thereof include a nitride ceramic, a carbide ceramic, and an oxide ceramic.

Even when the midsole plate is formed using the above resin or the above ceramic, it is desirable that the surface on the ceramic substrate side is coated with a noble metal in order to increase the heat reflection efficiency.

It is desirable that the midsole plate 15 (bottom plate) be substantially disk-shaped, but its diameter is not particularly limited, and is appropriately adjusted according to the size of the ceramic substrate. Also, the thickness is not particularly limited, and is appropriately adjusted according to the material to be used.

Further, an opening 260a may be formed in the midsole plate as shown in FIG. 13 (b). By providing the opening 260a, the cooling medium can be discharged well. Further, by providing the opening, the heat capacity of the midsole plate can be reduced, and the cooling rate can be improved. The diameter of the opening 260a is desirably l to 100 mm. If it is less than 1 mm, the cooling medium cannot be sufficiently discharged, and if it exceeds 100 mm, there is no effect of shielding heat from the heater.

It is desirable that a protrusion or a depression is formed in the plate-like body. Protrusions and This is because the depression can eliminate distortion of the plate-like body. If the plate is distorted, the support container itself will be distorted, and as a result, the ceramic substrate will be distorted.

If the ceramic substrate is distorted, the distance between the semiconductor wafer and the ceramic substrate will be uneven, making it impossible to heat the semiconductor wafer uniformly. Becomes difficult. Furthermore, when the plate is distorted, the reflected heat is unequally applied to the ceramic substrate, so that the semiconductor wafer cannot be uniformly heated. It is desirable that the protrusions and depressions are arranged in a matrix like a grid pattern.

FIG. 14 is an explanatory diagram showing a combination of a micrograph of the depression and a graph showing the shape (depth and position) of the depression. The white part seen above is the depression, and has a depth of about 117 μιη. By arranging such depressions like a grid, as shown in FIG. 13 (b), the flatness of the plate state can be increased.

In the actual measurement, the flatness can be adjusted to 1 mm or less by forming dents and projections on the plate-like body.

Needless to say, the definition of the surface roughness of the present invention is the surface roughness of a portion without such projections, depressions, and openings. The turbulence of the air flow and liquid flow of the refrigerant is considered to be caused by the surface contact between the refrigerant and the plate-like body, and local protrusions and depressions do not have a significant effect on the turbulence of the air flow. Also, since the refrigerant fluid is discharged from the opening, it does not contribute to the turbulence of the air flow. The height of such projections and the depth of the depressions are desirably 5 mm or less. If the dents and projections are too large, the plate-like body will be distorted. The protrusions and depressions may be formed for mounting a power control component such as a thermostat, for example.

The midsole plate does not need to be connected to the outer frame of the support container, and for example, as shown in FIG. 13, the midsole plate may be supported by a panel provided on the bottom plate. By supporting with a panel panel, the midsole plate can be supported without contacting the outer frame of the support container, and the support container is not distorted due to thermal expansion or contraction of the midsole plate.

FIG. 13 (a) is a cross-sectional view schematically showing a semiconductor manufacturing / inspection apparatus (hot plate unit) according to another embodiment of the present invention, and (b) is a sectional view shown in (a). It is the perspective view which showed typically the bottom plate which comprises a hot plate cutout.

In this hot plate unit 250, the supporting container is composed of an outer frame 270 and a bottom plate 260, and a recess of about 100 to 200 μιη is formed inside the bottom plate 260. 60 k 'is formed in a grid pattern.

A plurality of openings 260a are formed in the bottom plate 260, and exhaust is performed from the openings 260a. Although not shown, exhaust may be performed by providing an exhaust pipe (exhaust port). In such a case, the inside of the container is generally sealed.

Further, an inner bottom plate 256 having a plurality of openings 256 a is provided in the support container, and the inner bottom plate 256 is provided with a leaf spring 25 4 provided on the bottom plate 260. Supported by The bottom plate 260 is provided with a refrigerant supply pipe (supply port) 258 that fits into the opening 256 a of the midsole plate 256, and from the refrigerant supply pipe 258, the midsole plate 2 The refrigerant is supplied to the space partitioned by 56.

The diameter of the opening formed in the bottom plate 260 or the middle bottom plate 256 does not need to be one type, but may be two or more types.

Immediately below the through-holes 2 15 of the ceramic substrate 2 1 1, a sleeve 2 5 7 is provided so that one pin of the lifter can be passed through. 1 9 can be moved up and down. On the other hand, a heat insulating ring 252 is provided at the upper part of the support container, and a pin 251 is fitted into the heat insulating ring 252 and fixed to the outer frame 270 of the support container. A ceramic substrate 2 11 is mounted on the heat insulating ring 2 52, and the ceramic substrate 2 1 1 is pressed and fixed by a fixing plate 2 53.

The ceramic substrate 211 has an insulating layer 218 formed on the front surface, and a resistance heating element 212 formed on the bottom surface via the insulating layer 218, thereby functioning as a heater. ing.

Support pins 259 are formed on the heating surface for heating the silicon wafer 219 so that the silicon wafer can be supported at a fixed distance from the heating surface.

Further, a power supply terminal 2 13 is fixed to the end of the heating element 2 1 by soldering, and a socket 2 5 5 having a wiring 26 2 is fitted into the power supply terminal 2 13 to be connected to a power supply. It is supposed to connect.

Next, the ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the present invention will be described in detail.

The material of the ceramic substrate is not particularly limited, and examples thereof include a nitride ceramic, a carbide ceramic, and an oxide ceramic.

Examples of the nitride ceramic include metal nitride ceramics, for example, aluminum nitride, silicon nitride, boron nitride, titanium nitride, and the like.

Examples of the carbide ceramic include metal carbide ceramics, for example, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, tungsten carbide, and the like.

Examples of the oxide ceramic include metal oxide ceramics, for example, alumina, zirconia, cordierite, and mullite.

These ceramics may be used alone or in combination of two or more.

Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high.

Aluminum nitride is the most preferable among the nitride ceramics. This is because the thermal conductivity is as high as 18 O W / m · K.

Further, the ceramic material may contain a sintering aid. Examples of the sintering aid include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering _{aids, C a O, Y 2 0} 3, N a 2 0, L i 2 0, R b 2 0 is preferable. These content from 0.1 to 1 0 weight ^_0/0 are preferred. Further, it may contain alumina.

It is preferable that the brightness of the ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the present invention is N6 or less as a value based on the provisions of JISZ8721. This is because those having such brightness have excellent radiation heat quantity and concealing property. In addition, such a ceramic substrate can accurately measure the surface temperature by using a thermoviewer. Here, the lightness N is defined as 0 for the ideal black lightness, 10 for the ideal white lightness, and the lightness of the color between these black lightness and white lightness. Each color is divided into 10 so that the perception is at the same rate, and displayed by the symbols N0 to N10. The actual measurement is performed by comparing the color charts corresponding to N0 to N10. In this case, the first decimal place is 0 or 5.

A ceramic substrate having such characteristics can be obtained by including 100 to 500 ppm of carbon in the ceramic substrate. There are two types of carbon, amorphous and crystalline 1.Amorphous carbon can suppress a decrease in the volume resistivity of a ceramic substrate at high temperatures. Since the decrease in the thermal conductivity of the substrate at high temperatures can be suppressed, the type of carbon can be appropriately selected according to the purpose of the substrate to be manufactured.

The amorphous carbon can be obtained, for example, by sintering a hydrocarbon consisting of only C, H, and O, preferably a saccharide, in the air. Powder or the like can be used.

In addition, carbon can be obtained by thermally decomposing the acrylic resin in an inert atmosphere (nitriding gas, argon gas) and then heating and pressurizing it. By changing the acid value of this acryl resin, The degree of crystallinity (amorphousness) can be adjusted.

The ceramic substrate has a disk shape, preferably has a diameter of 20 mm or more, and most preferably has a diameter of 250 mm or more.

This is because the temperature of a disk-shaped ceramic substrate used in a semiconductor device tends to be non-uniform as a substrate having a large force diameter that requires temperature uniformity.

The thickness of the ceramic substrate is preferably 50 mm or less, more preferably 20 mm or less. Also, 1 to 5 mm is optimal.

If the thickness is too thin, warping at high temperatures is likely to occur, and if it is too thick, the heat capacity becomes too large and the temperature rise / fall characteristics deteriorate.

The porosity of the ceramic substrate is desirably 0 or 5% or less. This is because a decrease in thermal conductivity at high temperatures and the occurrence of warpage can be suppressed.

The ceramic substrate used in the semiconductor manufacturing inspection apparatus of the present invention can be used at 150 ° C. or higher, but is preferably used at 200 ° C. or higher.

In the present invention, a thermocouple can be embedded in a ceramic substrate as needed. The temperature of the resistance heating element is measured with a thermocouple, and the voltage and current are The temperature can be controlled by changing the amount.

The size of the joining portion of the metal wires of the thermocouple is preferably equal to or larger than the wire diameter of each metal wire and 0.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. Therefore, the temperature controllability is improved and the temperature distribution on the heated surface of the wafer is reduced.

Examples of the thermocouple include K-type, R-type, B-type, E-type, J-type, and T-type thermocouples as described in JIS-C-162 (1980). Can be

FIG. 3 shows another embodiment of the present invention, and is a partially enlarged sectional view schematically showing the vicinity of a resistance heating element of a ceramic substrate in which a resistance heating element is disposed inside a ceramic substrate. .

Although not shown, the ceramic substrate 31 is formed in a disk shape as in the case of FIG. 1, and the resistance heating elements 22 are: A concentric pattern is formed inside the lamic substrate 31. Is formed. Further, in these resistance heating elements 22, through holes 38 are formed directly below both ends of the circuit, and through holes 37 are formed to expose the through holes 38 to the outside.

The external terminal 13 is bonded to the through hole 38 exposed to the blind hole 37 using solder or brazing material, and the external terminal 13 is connected to the external terminal 13 via the through hole 38 '. Electrical connection with the resistance heating element 22 is achieved.

As shown in FIG. 4, the through hole 38 is formed so as to be exposed on the bottom surface of the ceramic substrate 31, and the through hole may not be formed. As shown in FIG. 5, a non-oxidizable metal layer 39 consisting of a Ni layer 39 a and an Au layer 39 b is formed on the surface of the through hole 38. 9 may be connected. In this case, the non-oxidizing metal layer 39 can be formed by sputtering, plating, or the like. It is desirable to remove such factors. ■ The through hole 38 is made of a metal such as tungsten or molybdenum, or a carbide thereof, and preferably has a diameter of 0.1 to 1 O mm. This is because cracks and distortion can be prevented while preventing disconnection. The size of the blind hole 37 is not particularly limited, and may be any size as long as the head portion of the external terminal 13 can be inserted.

In the present invention, the resistance heating element is made of a metal such as a noble metal (gold, silver, platinum, or palladium), lead, tungsten, molybdenum, nickel, or a conductive ceramic such as a carbide of tungsten or molybdenum. Is desirable. This is because the resistance value can be increased, and the thickness itself can be increased for the purpose of preventing disconnection and the like, and it is difficult to oxidize and the thermal conductivity does not easily decrease. These may be used alone or in combination of two or more.

In addition, since it is necessary to make the temperature of the entire ceramic substrate uniform, the resistance heating element is preferably a concentric pattern as shown in FIG. 1 or a combination of a concentric pattern and a bent line pattern. . The thickness of the resistance heating element is

:! ~ 50μιη is desirable, and the width is desirably 5 ~ 2 Omm.

The resistance value can be changed by changing the thickness and width of the resistance heating element, but this range is the most practical. The resistance value of the resistance heating element becomes thinner and becomes larger as it becomes thinner.

When a resistance heating element is provided inside, the distance between the heating surface 21a and the resistance heating element 22 becomes short, and the uniformity of the surface temperature decreases, so that the width of the resistance heating element 22 itself is increased. Need to be In addition, since the resistance heating element 22 is provided inside the ceramic substrate, there is no need to consider adhesion to nitride ceramics or the like.

The resistance heating element may have a cross section of any of a square, an ellipse, a spindle, and a spheroid, but is desirably flat. This is because the flattened surface tends to radiate heat toward the heated surface, so that the amount of heat transmitted to the heated surface can be increased and the temperature distribution on the heated surface is difficult to achieve.

Note that the resistance heating element may have a spiral shape.

In order to form a resistance heating element on the surface or inside of the ceramic substrate, it is preferable to use a conductor paste made of metal or conductive ceramic.

That is, when a resistance heating element is formed on the surface of the ceramic substrate 21 as shown in FIGS. 1 and 2, the ceramic paste is usually fired to produce the ceramic substrate 21, and then the conductive paste is applied to the surface. A resistance heating element is produced by forming a layer and firing the layer. one On the other hand, when forming a resistance heating element inside the ceramic substrate 31 as shown in FIGS. 3 to 5, after forming the above-mentioned conductor paste layer on the green sheet, the green sheet is laminated and fired. Create a resistance heating element inside.

The conductive paste is not particularly limited, but is preferably a conductive paste containing a metal particle or a conductive ceramic particle, a resin, a solvent, a thickener, or the like in order to secure conductivity.

Examples of the material of the metal particles and the conductive ceramic particles include those described above. The metal particles or conductive ceramic particles preferably have a particle size of 0.1 to 100 m. If it is too small, less than 0.1 m, it is liable to be oxidized, while if it exceeds 100 / m, sintering becomes difficult and the resistance value becomes large.

The shape of the metal particles may be spherical or scaly. When these metal particles are used, they may be a mixture of the sphere and the flakes. When the metal particles are flakes or a mixture of spheres and flakes, the metal oxide between the metal particles is easily retained, and the adhesion between the resistance heating element and the ceramic substrate is ensured. This is advantageous because the resistance value can be increased. Examples of the resin used for the conductor paste include an epoxy resin and a phenol resin. Examples of the solvent include isopropyl alcohol. Examples of the thickener include cellulose and the like.

When forming a conductor paste for a resistance heating element on the surface of a ceramic substrate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable to have it. Thus, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be more closely adhered.

It is not clear why mixing the above metal oxide improves the adhesion to the ceramic substrate, but the surface of metal particles and the surface of a ceramic substrate made of non-oxide are slightly oxidized. It is considered that the oxide film is formed by sintering and integrating the oxide films via the metal oxide, and the metal particles and the ceramic adhere to each other. Also, when the ceramic constituting the ceramic substrate is an oxide, since the surface is naturally made of an oxide, a conductor layer having excellent adhesion is formed. You.

The metal oxide, for example, lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, least one selected from the group consisting of yttria Contact Yopi titania is preferred.

This is because these oxides can improve the adhesion between the metal particles and the ceramic substrate without increasing the resistance value of the resistance heating element. '

The lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, yttria, the proportion of Chitayua, when a 1 0 0 parts by weight of the total amount of the metal oxide, by weight, lead oxide 1-10, silica 1-30, boron oxide 5-5, oxygen oxide & 20-70, alumina 1-110, yttria 1-50, titania 1-5 0, and the total is preferably adjusted so as not to exceed 100 parts by weight.

By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic substrate can be particularly improved.

The amount of the metal oxide added to the metal particles is preferably from 0.1% by weight to less than 10% by weight. Further, when the resistance heating element is formed using the conductor paste having such a configuration, the area resistivity is preferably 1 to 45 πιΩΩ.

If the area resistivity exceeds 45 πιΩΖ, the amount of heat generated becomes too large for the applied voltage, and it is difficult to control the amount of heat generated on a ceramic substrate provided with a resistance heating element on the surface. . If the addition amount of the metal oxide is 10% by weight or more, the area resistivity exceeds 5ΟπιΩ / port, the calorific value becomes too large, and the temperature control becomes difficult. Uniformity decreases.

When the resistance heating element is formed on the surface of the ceramic substrate, a metal coating layer is preferably formed on the surface of the resistance heating element. This is to prevent the resistance value from changing due to oxidation of the internal metal sintered body. The thickness of the metal coating layer to be formed is

0.1 to 10 μ μη is preferable.

The metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples thereof include gold, silver, palladium, platinum, and nickel. These may be used alone or in combination of two or more. Of these, nickel is preferred.

When the resistance heating element is formed inside the ceramic substrate, no coating is required since the surface of the resistance heating element is not oxidized.

The material of the external terminal 13 connected to the resistance heating element 22 or the through hole 38 is not particularly limited, and examples thereof include metals such as nickel and kovar. The external terminal 13 preferably has a T-shaped cross section in order to increase the area of the contact surface. The size thereof is not particularly limited because it is appropriately adjusted depending on the size of the ceramic substrate 21 used, the size of the resistance heater 22 and the like, but the diameter of the shaft portion is 0.5 to 10 mm. The length of the shaft portion is preferably 3 to 20 mm.

Specific examples of the semiconductor manufacturing / inspection apparatus of the present invention include, for example, an electrostatic chuck, a wafer prober, a hot plate, and a susceptor.

The hot plate unit is a device in which only a resistance heating element is provided on the surface or inside of a ceramic substrate, whereby an object to be heated such as a silicon wafer can be heated to a predetermined temperature.

When a resistance heating element is provided on the surface or inside the ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the present invention, and when an electrostatic electrode is provided inside the ceramic substrate, it functions as an electrostatic chuck.

Examples of the electrostatic electrode include a metal such as a noble metal (gold, silver, platinum, and palladium), lead, tungsten, molybdenum, and nickel, and a conductive ceramic such as a carbide of tungsten and molybdenum. . These may be used alone or in combination of two or more.

FIG. 6A is a longitudinal sectional view schematically showing a ceramic substrate constituting the electrostatic chuck, and FIG. 6B is a sectional view taken along line AA of the ceramic substrate shown in FIG. In this electrostatic chuck 60, chuck positive and negative electrostatic layers 62 and 63 are embedded inside a ceramic substrate 61 and connected to through holes 680, respectively, and a ceramic dielectric film 64 is formed on the electrode. Are formed.

Further, a resistance heating element 66 and a through hole 68 are provided inside the ceramic substrate 61 so that the silicon wafer 29 can be heated. Note that an RF electrode may be embedded in the ceramic substrate 61 as necessary. Although not shown, a through hole is provided below the through hole 68 to expose the through hole 68, and the ceramic substrate 61 is attached to the support container 12 shown in FIG. When the electrostatic chuck 60 is provided, the electrostatic chuck 60 is excellent in the temperature rising efficiency, the cooling efficiency, and the like, like the above-described hot plate unit 20.

Also, as shown in (b), the electrostatic chuck 60 is usually formed in a circular shape in plan view, and inside the ceramic substrate 61, the semi-circular portion 62 shown in (b) is formed. a and the comb-teeth portion 6 2 b, and the chuck negative-electrode electrostatic layer 6 3, which also comprises a semicircular-shaped portion 63 a and the comb-teeth portion 63 b, and the force S, They are arranged to face each other so as to intersect with the comb teeth portions 6 2 b and 6 3 b.

When this electrostatic chuck is used, the positive side of the DC power supply and one side of the DC power supply are connected to the chuck positive electrostatic layer 62 and the chuck negative electrostatic layer 63, respectively, and a DC voltage is applied. Thus, the silicon wafer placed on the electrostatic chuck is electrostatically attracted.

7 and 8 are horizontal cross-sectional views schematically showing electrostatic electrodes in another electrostatic chuck. In the electrostatic chuck 70 shown in FIG. 7, a semicircular shape is formed inside the ceramic substrate 71. A chuck positive electrode electrostatic layer 72 and a chuck negative electrode electrostatic layer 73 are formed. The electrostatic chuck 80 shown in FIG. Electric layers 82a and 82b and chuck negative electrode electrostatic layers 83a and 83b are formed. The two positive electrode electrostatic layers 82a and 82b and the two negative electrode electrostatic layers 83a and 83b are formed to intersect, respectively.

When an electrode in the form of a circular or divided electrode is formed, the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector. When a resistance heating element is provided on or on the ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the present invention, a check top conductor layer is provided on the surface of the ceramic substrate, and a guard electrode and a ground electrode are provided inside. In addition, it functions as a wafer proper.

FIG. 9 is a cross-sectional view schematically showing one embodiment of the ceramic substrate constituting the wafer prober, FIG. 10 is a plan view thereof, and FIG. 11 is the ceramic substrate shown in FIG. FIG. 2 is a sectional view taken along line A-A in FIG. In this wafer prober, concentric circular grooves 8 are formed on the surface of a ceramic substrate 3 having a circular shape in plan view, and a plurality of suction holes 9 for sucking a silicon wafer are provided in a part of the grooves 8. In addition, a chuck top conductor layer 2 for connecting to an electrode of a silicon wafer is formed in a circular shape on most of the ceramic substrate 3 including the groove 8.

On the other hand, on the bottom surface of the ceramic substrate 3, a resistance heating element 51 having a concentric circular shape in plan view as shown in FIG. 1 is provided in order to control the temperature of the silicon wafer. When this wafer prober is arranged in the support container 12 shown in FIG. 2, the wafer prober has excellent temperature rising efficiency and cooling efficiency as well as the hot plate unit 20 described above. Becomes

Further, a guard electrode 6 and a ground electrode 7 (not shown) having a lattice shape as shown in FIG. 11 are provided inside the ceramic substrate 3 for removing stray capacitor noise. Reference numeral 52 indicates an electrode non-formed portion. The reason why such a rectangular electrode non-formed portion 52 is formed inside the guard electrode 6 is to firmly adhere the upper and lower ceramic substrates 3 sandwiching the guard electrode 6. In such a wafer prober, a silicon wafer on which an integrated circuit is formed is placed on a ceramic substrate housed in a supporting container, and a probe card having test pins is pressed against the silicon wafer, followed by heating and cooling. The continuity test can be performed by applying a voltage while applying the voltage.

Next, a method of manufacturing a hot plate unit will be described as an example of a method of manufacturing a semiconductor manufacturing and inspection apparatus of the present invention.

First, a method for manufacturing a hot plate unit having a ceramic substrate having a resistance heating element on the bottom surface will be described (see FIGS. 1 and 2).

(1) Ceramic substrate manufacturing process

After preparing a slurry by blending a sintering aid such as yttria or a binder as necessary with the above-mentioned ceramic powder such as aluminum nitride, the slurry is granulated by a method such as spray-drying. The granules are placed in a mold or the like and pressurized to form a plate or the like to produce a green body. When preparing the slurry, amorphous / crystalline carbon may be added. Next, the formed body is heated, fired and sintered to produce a ceramic plate. After that, the ceramic substrate 21 is manufactured by processing into a predetermined shape, but may be a shape that can be used as it is after firing. By performing heating and firing while applying pressure, it is possible to manufacture a ceramic substrate 21 having no pores. Heating and sintering may be performed at a temperature equal to or higher than the sintering temperature.

Next, though not shown, a through hole for inserting a support pin for supporting the silicon wafer and a through hole for inserting a lifter pin for carrying the silicon wafer, etc. , And a portion with a bottomed hole for embedding a temperature measuring element such as a thermocouple.

(2) Process of printing conductive paste on ceramic substrate

The conductor paste is generally a high-viscosity fluid composed of metal particles, resin, and a solvent. The conductor paste is printed on the portion where the resistance heating element is to be provided by screen printing or the like to form a conductor paste layer. In addition, since the resistance heating element needs to keep the entire temperature of the ceramic substrate at a uniform temperature, for example, the resistance heating element should be printed in a concentric shape or a pattern combining the concentric shape and the bent line shape. Is preferred.

The conductive paste layer is preferably formed so that the cross section of the resistance heating element 22 after firing has a rectangular and flat shape.

(3) Firing the conductor paste

The conductor paste layer printed on the bottom surface of the ceramic substrate 21 is heated and fired to remove the resin and the solvent, and the metal particles are sintered and baked on the bottom surface of the ceramic substrate 21 to form the resistance heating element 22. Form. The heating and firing temperature is preferably from 500 to 100 ° C.

If the above-mentioned metal oxide is added to the conductor paste, the metal particles, the ceramic substrate and the metal oxide are sintered and integrated, so that the adhesion between the resistance heating element and the ceramic substrate is improved. I do.

(4) Formation of metal coating layer

It is desirable to provide a metal coating layer (not shown) on the surface of the resistance heating element 22. The metal coating layer can be formed by electrolytic plating, electroless plating, sputtering, or the like. However, considering mass productivity, electroless plating is optimal.

(5) Installation of terminals, etc.

The external terminal 13 is attached to the end 22 a of the circuit of the resistance heating element 22 by soldering or the like. Also, a temperature measuring element 28 such as a thermocouple is inserted into the bottomed hole 24 and sealed with a heat-resistant resin such as polyimide, ceramic or the like.

(6) Next, the support container 12 is prepared, and the ceramic substrate having the resistance heating element 22 is fitted into the support container 12 via the heat insulating ring 11.

(7) Polishing of plate

The surface of the plate-like body (middle bottom plate 15) attached to the support container 12 is mirror-finished with diamond cannonballs, or polished using a # 500 to # 800 diamond whetstone. Is performed so that the surface roughness based on JISB 0601 is Ra = 20 im or less. Further, depressions and projections may be formed by pressing an engraving plate or the like against the surface of the plate-like body. Also, the opening may be formed by punching or the like.

After this, a precious metal layer may be formed on the surface by plating or sputtering.

Next, as shown in FIG. 2, the midsole plate 15 was attached to the support container 12 and the external terminal 13 was formed in the midsole plate 15: drawn out from the R through hole, and connected to the lead wire 17. The external terminal 13 and the lead 17 are connected by inserting the socket 16 into the external terminal 13.

(8) Thereafter, the bottom plate 14 having other jigs is attached to the support container 12 as shown in FIGS. When manufacturing the above hot plate unit, an electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate, and a chuck top conductor layer is provided on the heating surface, and the inside of the ceramic substrate is provided. A wafer prober can be manufactured by providing a guard electrode and a duland electrode.

When an electrode is provided inside the ceramic substrate, a metal foil or the like may be embedded inside the ceramic substrate. Also, when forming a conductor layer on the surface of a ceramic substrate, Can be used by a sputtering method or a plating method, and these may be used in combination. Next, as another example of the method of manufacturing a semiconductor manufacturing / inspection apparatus of the present invention, a method of manufacturing a hot plate unit having a different configuration from the above-described hot plate unit will be described.

FIGS. 12 (a) to 12 (d) are cross-sectional views schematically showing a method of manufacturing a ceramic substrate having a resistance heating element inside a hot plate unit.

(1) Green sheet manufacturing process

First, a paste is prepared by mixing a nitride ceramic powder with a binder, a solvent, and the like, and a green sheet is produced using the paste.

As the above-mentioned ceramic powder, aluminum nitride or the like can be used. If necessary, a sintering aid such as yttria may be added. Further, when producing the green sheet, crystalline or amorphous carbon may be added.

Also, as the binder, at least one selected from an acrylic binder, ethyl cellulose, butylace resin-soluble solvent, and polybutyl alcohol is desirable.

Further, as the solvent, at least one selected from terbineol and glycol is preferable.

A paste obtained by mixing these is formed into a sheet by a doctor blade method to produce a green sheet 50.

The thickness of the green sheet 50 is preferably 0.1 to 5 mm.

Next, if necessary, the obtained green sheet will have a through hole for inserting a support pin for supporting the silicon wafer, and a through hole for inserting a lifter pin for transporting the silicon wafer. A part, a bottomed hole for embedding a temperature measuring element such as a thermocouple, and a through hole for connecting a resistance heating element to an external terminal are formed. The above processing may be performed after forming a green sheet laminate described later.

(2) Step of printing conductor paste on daline sheet

A conductor paste containing a metal paste or a conductive ceramic is printed on the green sheet 50 to form a conductor paste layer 420, and a portion to be a through hole is filled with the conductor paste, and a filling layer 49 is formed. Form a 0. These conductive pastes contain metal particles or conductive ceramic particles.

The average particle diameter of the metal particles, such as tungsten particles or molybdenum particles, is preferably from 0: to 5 μκι. If the average particle size is less than 0.1 l / m, and if it exceeds 5 μπι, it is difficult to print the conductor cost.

Examples of such a conductive paste include 85 to 87 parts by weight of metal particles or conductive ceramic particles; at least one kind of binder 1.5 selected from acryl-based, ethylcellulose, butylcellosonolev, and polyvinyl alcohol. To 10 parts by weight; and a composition (paste) obtained by mixing 1.5 to 10 parts by weight with at least one solvent selected from α-terbineol and dalicol.

(3) Green sheet lamination process

The green sheet 50 on which the conductor paste prepared in the above step (1) is not printed is laminated on and under the green sheet 50 on which the conductor paste layer 420 produced in the above step (2) is printed (see FIG. 12 (a)).

At this time, the number of green sheets 50 stacked on the upper side is made larger than the number of green sheets 50 stacked on the lower side, and the formation position of the conductive paste layer 420 is eccentric toward the bottom.

Specifically, the number of stacked green sheets 50 on the upper side is preferably 20 to 50, and the number of stacked green sheets 50 on the lower side is preferably 5 to 20.

(4) Firing process of green sheet laminate

The green sheet laminate is heated and pressed to sinter the green sheet 50 and the conductive paste therein, thereby producing a ceramic substrate 4%.

The heating temperature is preferably from 1000 to 2000 ° C, and the pressure is preferably from 10 to 20 MPa. Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, or the like can be used.

The obtained ceramic substrate 41 is provided with a bottomed hole 44 for inserting a temperature measuring element and a through hole 45 for inserting a lifter pin (FIG. 12 (b)). Then, an external terminal is inserted. For example, a bag hole 48 is provided (Fig. 12 (c)). The bottomed hole 44, the through hole 45 and the blind hole 48 are used for drilling or sandblasting after polishing the surface. It can be formed by performing a strike process.

The external terminals 43 are attached to the through holes 49 exposed from the blind holes 48 by soldering or the like (FIG. 12 (d)). In addition, a thermocouple such as a thermocouple is inserted into the bottomed hole, and sealed with a heat-resistant resin such as a polyimide or ceramic.

(5) Next, the support container 12 is prepared, and the ceramic substrate having the resistance heating element 22 is fitted into the support container 12 via the heat insulating ring 11.

(6) Polishing of plate

The surface of the plate-like body (middle bottom plate 15) attached to the support container 12 is mirror-finished with diamond abrasive, or polished using a diamond grindstone of # 50 to # 800. Polish so that the surface roughness based on JISB 0601 becomes Ra = 20 μπι or less. Further, depressions and projections may be formed by pressing a stamping plate or the like against the surface of the plate-like body. The opening may be formed by punching or the like. Thereafter, a noble metal layer may be formed on the surface on the ceramic substrate side by plating or sputtering.

Then, as shown in Fig. 2, the midsole plate 15 is attached to the support container 12, and the external terminals 13 are pulled out from the through holes formed in the midsole plate 15, and the socket connected to the lead wire 17 By connecting 16 to the external terminal 33, the external terminal 33 and the lead wire 17 are connected.

(7) After that, the bottom plate 14 with other jigs is attached to the support container 12 as shown in Figs. 1 and 2, and the production of the hot plate unit (semiconductor production. Inspection equipment) is completed. I do. ·

In the above hot plate unit, various operations are performed while placing a silicon wafer or the like on the hot plate unit or holding the silicon wafer or the like with support pins and then heating or cooling the silicon wafer or the like. It can be carried out.

When manufacturing the hot plate unit, an electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate, and a chuck top conductor layer is provided on the heating surface, and a guard is provided inside the ceramic substrate. By providing electrodes and ground electrodes, a wafer prober can be manufactured.

When an electrode is provided inside a ceramic substrate, the case where a resistance heating element is formed Similarly, a conductive paste layer may be formed on the surface of the green sheet. When a conductor layer is formed on the surface of the ceramic substrate, a sputtering method or a plating method can be used, and these may be used in combination. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described in more detail.

In addition, the roughness Ra and Rmax of the plate-like body surface were measured by a shape measuring instrument (Surfcom 92 OA manufactured by Tokyo Seimitsu Co., Ltd.).

The photograph shows the result of measurement and observation using a Keyence laser displacement meter.

(Example 1) Manufacture of hot plate unit (see Figs. 1 and 2)

(1) the aluminum nitride powder (Tokuyama Corp., average particle size 1. 1 mu alpha) 1 0 0 by weight ^ oxide Ittoriumu (Υ ₂ Ο _3: yttria, average particle size: 0. 4 / im) 4 by weight , A composition consisting of 12 parts by weight of acrylyl binder and alcohol was spray-dried to prepare a granular powder.

(2) Next, the granular powder was placed in a mold and molded into a flat plate to obtain a green compact.

(3) The green compact after the processing was hot-pressed at a temperature of 180 ° C. and a pressure of 20 MPa to obtain an aluminum nitride sintered body having a thickness of 3 mm.

Next, a disk having a diameter of 21 Omm or 310 mm was cut out from the sintered body to obtain a ceramic plate (ceramic substrate 21).

Next, this plate is drilled to form a through hole 25 for inserting a lifter pin of a silicon wafer, and a bottomed hole 24 (diameter: 1.1 mm, depth: 2 mm) for embedding a thermocouple. Formed.

(4) Conductive paste was printed on the bottom of the sintered body obtained in (3) by screen printing. The printing pattern was concentric as shown in FIG.

As the conductor paste, Solvent PS603D manufactured by Tokuka Chemical Laboratory, which is used for forming through holes in printed wiring boards, was used.

This conductor paste is a silver-lead lead paste, and based on 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and oxide Boron _It contained 7.5 parts by weight of a metal oxide consisting of _f (25% by weight) and alumina (5% by weight). The silver particles had a mean particle size of 4.5 μπι and were scaly.

(5) Next, the sintered body on which the conductor paste is printed is heated and fired at 780 ° C to sinter the silver and lead in the conductor paste and to bake the sintered body, thereby forming the resistance heating element 22. Formed. The silver-lead lead resistance heating element 22 had a thickness of 5 μπι, a width of 2.4 mm, and an area resistivity of 7.7πιΩ.

(6) Electroless nickel plating consisting of an aqueous solution with a concentration of nickel sulfate 80 g / 1, sodium hypophosphite 24 g / 1, sodium acetate 12 g / 1, boric acid 8 g / 1, and ammonium chloride 6 g / 1 The sintered body prepared in (5) above was immersed in the bath to deposit a 1 μm thick metal coating layer 220 (nickel layer) (not shown) on the surface of the resistance heating element 22 made of silver-lead. Was.

(7) A silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the portion where the external terminals 13 were to be attached to form a solder paste layer.

Next, an external terminal 13 made of Kovar was placed on the solder paste layer, and heated and reflowed at 420 ° C., and the external terminal 13 was attached to an end of the resistance heating element 22 via the solder layer 130.

(8) A thermocouple for temperature control was inserted into the bottomed hole, filled with a polyimide resin, and cured at 190 ° C for 2 hours.

(9) Next, the support container 12 is prepared, and the ceramic substrate having the resistance heating element 22 is provided.

21 was fitted into the support container 12 via the heat insulating ring 11.

(10) Polishing the midsole plate

Next, the surface on the ceramic substrate side of the SUS middle bottom plate 15 attached to the support container 12 is buffed, and the surface roughness based on JISB0601 is Ra = 0.1 μm Rmax = 0.8 μπι. It became a yotsu.

Next, as shown in FIG. 2, the inner bottom plate 15 is attached to the support container 12, the external terminal 13 is pulled out from a through hole formed in the inner bottom plate 15, and the socket 16 connected to the lead wire 17 is connected to the external terminal 13. The external terminals 13 and the lead wires 17 were connected by inserting them into the holes. (11) Thereafter, the bottom plate 14 having other jigs was attached to the support container 12 as shown in FIGS. 1 and 2, and the production of the hot plate was completed.

(Embodiment 2) Hot plate unit (See Figs. 3 and 12)

(1) the aluminum nitride powder (Tokuyama Corp., average particle size: 1. 1.um) 100 parts by weight, oxide Ittoriumu (Y ₂ 0 _3: yttria, average particle size: 0. 4 μ m) 4 parts by weight, Atari Lubinder 11.5 parts by weight, dispersant 0.5 part by weight 1 1 Using a paste containing a mixture of 53 parts by weight of alcohol consisting of ethanol and ethanol, molding by the doctor blade method to a thickness of 0 A 47 mm green sheet 50 was produced.

(2) Next, the green sheet 50 was dried at 80 ° C. for 5 hours, and a portion to be a through hole was formed by punching.

(3) 100 parts by weight of tungsten carbide particles having an average particle diameter of 1 μπι, 3.0 parts by weight of an atalyl-based binder, 3.5 parts by weight of an α-terbineol solvent, and 0.3 part by weight of a dispersant are mixed. A conductor paste was prepared.

100 parts by weight of tandasdene particles having an average particle size of 3 μm, ataryl-based binder 1.

Conductive paste B was prepared by mixing 9 parts by weight and 3.7 parts by weight of a monoterpineol solvent with 0.2 part by weight of a dispersant.

This conductor paste A was printed on the green sheet 50 by screen printing to form a conductor paste layer 220 for the resistance heating element 22. The printing pattern is a concentric pattern as shown in Fig. 1, and the width of the conductor paste layer is 1 Omm and its thickness is 1 2

/ m. In addition, the conductive paste B is filled in the portions that will become through holes,

490 was formed.

On the green sheet 50 after the above treatment, 37 green sheets 50 without tungsten paste were laminated on the upper side (heating surface) and 13 on the lower side at 130 ° C and 8 MPa pressure (Fig. 12 (a)).

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C for 5 hours, and hot-pressed at 1890 ° C and a pressure of 15 MPa for 10 hours to obtain a 3 mm-thick aluminum nitride. A sintered compact was obtained. This was cut out into a 23 Omm disk shape, and a 6 μιη thick, 1 Omm wide (act ratio: 1666) resistance heating element 42 and through hole 49 were cut inside. (FIG. 12 (b)).

(5) Next, the plate obtained in (4) is polished with a diamond grindstone, a mask is placed on the plate, and a plasting process using SiC or the like is performed to pass through the lifter pins. A hole 45 and a bottomed hole 44 for burying a thermocouple in the surface were provided.

(6) Further, a hole immediately under the through hole 49 was drilled to form a blind hole 48 having a diameter of 3.0 mm and a depth of 0.5 mm, and the through hole 48 was exposed (FIG. 12 (c )). Then, a brazing filler metal made of Ni—Au was used in the blind hole 48, heated and reflowed at 700 ° C., and an external terminal made of Kovar was connected (FIG. 12 (c)).

(7) A plurality of thermocouples for temperature control were embedded in the bottomed holes 44, filled with a polyimide resin, and cured at 190 ° C for 2 hours.

(8) Next, the support container 12 was prepared, and the ceramic substrate 41 having the resistance heating element 42 was fitted into the support container 12 via the heat insulating ring 11.

(9) Polishing the midsole plate

The surface on the ceramic substrate side of the 1.5-mm-thick alumina mid-bottom plate 15 attached to the support vessel 1 2 was loaded with a SiC abrasive with a particle size of 10 μm to 1 kg Z cm ² . Polishing was performed so that the surface roughness based on JISB 0601 was Ra = 10 μπι and Rmax = 1OO / zm.

Next, as shown in FIG. 2, the midsole plate 15 is attached to the support container 12, the external terminal 13 is pulled out from a through hole formed in the midsole plate 15, and the socket 16 connected to the lead wire 17 is externally connected. External terminal 13 was connected to lead 17 by inserting it into terminal 13.

(10) Thereafter, the bottom plate 14 having other jigs was attached to the support container 12 as shown in FIGS. 1 and 2, and the production of the hot plate was completed.

(Example 3)

A hot plate was manufactured in the same manner as in Example 1 except that the inner bottom plate 15 was polished in the same manner as in Example 2, and then subjected to nickel plating and gold plating under the following conditions.

Insole 15 with electroless nickel plating solution with pH 5 containing 30 g / l nickel chloride, 10 gZl sodium hypophosphite, 10 gZl sodium taenoate 20 Immersion for 5 minutes to form a nickel plating layer 39a with a thickness of 5 μηα on the surface.Additionally, potassium cyanide 2 gZl, ammonium chloride 75 gZ1, sodium citrate 50 gZ1, sodium hypophosphite l It was immersed in an electroless plating bath containing Og / 1 at 93 for 23 seconds at 93 to form a plating layer 39b having a thickness of 0.03 / in.

At this time, the surface roughness of the midsole plate 15 was Ra = l / zm and Rmax = 10 im.

(Example 4)

The thickness 1. 5 mm, polished with 1 k load of GZC m ² with diamond grindstone surface # 220 of SUS steel discs with a diameter of 32 Omm, the surface roughness of the surface R a = 0. 6 m, Rmax = 3.8 m. Next, to form an opening through punching, further engraved plate a pin having a diameter of about 0. 3 mm were formed in 1 O k pressure GZcm ² on the surface, pressed into a disc made of S US, 13 In this way, a depression with a depth of about 130 μΐη was formed vertically and horizontally on the surface like a grid.

This disc was used as the bottom plate and welded to an outer frame made of SUS to form a support vessel. The disk has 5 openings with a diameter of 30 mm, 80 openings with a diameter of 8 mm, and 10 openings with a diameter of 10 mm, with an opening ratio of 10%.

This support container and a ceramic substrate manufactured under the same conditions as in Example 1 were combined as shown in FIGS. 1 and 2 to obtain a hot plate unit.

(Example 5)

The surface of an S US disk with a thickness of 1.5 mm and a diameter of 320 mm is polished with a # 80 diamond whetstone with a load of 1 kg / cm ² , and the surface roughness R a = 18 / ζπι , R max = 210 μπι. Then, the engraving plate diameter pins 0.5 about 3 mm on the surface was formed at a pressure of 10 k gZcm ^2, pressed against the disc-made S US, as shown in Figure 1 3, the depth on the surface thereof A depression of about 130 μπι was formed vertically and horizontally like a grid.

This disc was used as a bottom plate and integrally welded to an outer frame made of SUS to form a support container. This support container and a ceramic substrate manufactured under the same conditions as in Example 1 were combined as shown in FIGS. 1 and 2 to form a hot plate unit.

(Example 6) The thickness 1. polished by 1 kg / cm ² load to 5 mm alumina base plate 1 5 of the ceramic substrate surface in at # 2 2 0 diamond grindstone, surface roughness based on JISB 0 6 0 1 The hot plate unit was manufactured in the same manner as in Example 1 except that R a = 0.5 ^ m and Rmax = 6πα.

(Example 7)

The Puripureda impregnated with polyimide resin to a glass cloth laminated five layers, the two-sided; R a = 0. 0 1; zm nipping specular stainless steel plate, 2 2 0 ° C, 1 0 0 kg / cm 2 Then, a polyimide substrate was manufactured by pressurizing to obtain a disc having a diameter of 230 mm and a thickness of 2 mm. Twenty holes having a diameter of 1 Omm were formed in this disc by punching to have an aperture ratio of 5%.

Through the above steps, the surface of the polyimide plate was transferred to the surface of the mirror-finished stainless steel plate, and a surface having a roughness of R a = 0.01 μm, Rmax = 0.15 μm was formed.

As shown in FIG. 13, this midsole plate was placed on plate panels 254 provided at three places of the support container, and was fixed with screws.

Resin has a higher coefficient of thermal expansion than metal, so if it is fixed as it is, the support container will be distorted. Therefore, the difference in the coefficient of thermal expansion was absorbed by the panel panel using the panel panel 254, and the outer frame 270 was not distorted.

Further, as the ceramic substrate having the resistance heating element, a substrate manufactured under the same conditions as in Example 1 was used.

(Example 8)

Five layers of pre-preda impregnated with polyimide resin are laminated on a glass cloth and sandwiched between stainless steel plates embossed by sandblasting using 3iC particles with a particle size of 20111, 220 ° C, a polyimide substrate was manufactured by applying a pressure of 100 kg / cm ² to obtain a disc having a diameter of 23 Omm and a thickness of 2 mm.

Through the above steps, the surface of the polyimide plate was transferred to the surface of the embossed stainless steel plate, and a surface having a roughness of Ra-lO ^ nuRmax = 95 win was formed.

By punching this disc, 20 holes with a diameter of 1 Omm were made and the aperture ratio was 5%. did.

As shown in FIG. 13, this midsole plate was placed on a plate panel 254 provided at three locations in the support container, and was fixed with screws.

(Example 9)

On one side of an aluminum disk with a thickness of 15 mm and a diameter of 30 Omm, a heater sandwiching the heating wire with silicon rubber was fixed with screws and used as a heating plate.

This heating plate was attached to the support container of Example 1.

(Comparative Example 1)

A hot plate was manufactured in the same manner as in Example 1 except that the inner bottom plate 15 was not subjected to any polishing treatment and was attached to the support container 12 as it was.

At this time, the surface roughness of the midsole plate 15 was _ & = 25 μπι Rmax = 250 m. '(Comparative Example 2)

'' Five layers of pre-preda impregnated with polyimide resin are laminated on a glass cloth, sandwiched between stainless steel plates embossed by sandblasting using 3iC particles with a particle size of 30111, and 220 ° C 100 A polyimide substrate was manufactured by applying a pressure of kg / cm ² , and was made into a disk with a diameter of 230 mm and a thickness of 2 mm.

Through the above steps, the surface of the embossed stainless steel plate was transferred to the surface of the polyimide plate, and a surface having a roughness of 1 & = 25 111 Rmax = 260 / im was formed.

Punching 20 holes with a diameter of 1 Omm by punching this disc to obtain an aperture ratio of 5% / o

As shown in FIG. 13, this midsole plate was placed on a plate panel 254 provided at three places in the support container and fixed with screws.

(Comparative Example 3) On one side of an aluminum disk with a thickness of 15 mm and a diameter of 30 Omm, a heater sandwiching the heating wire with silicon rubber was fixed with screws and used as a heating plate.

This heating plate was attached to the support container of Comparative Example 1.

The hot plate units according to Examples 1 to 9 and Comparative Examples 1 to 3 thus obtained were energized and heated to 300 ° C., and then room temperature air was used as a refrigerant. Air was blown from the refrigerant inlet tube 27 at a flow rate of lm ³ / min to cool.

The hot plate unit was evaluated based on the following criteria.

Evaluation method

(1) Measurement of heating time and cooling time

The time required for the hotplate to rise to 300 ° C is about 300-250. The time to cool to C was measured. However, when a resin plate was used, the time required to increase the temperature to 200 ° C and the time required to decrease the temperature to 200 to 150 ° C were measured.

(2) Variation in cooling time

The cooling time was measured by the above method (1), and the variation of the cooling time for 10 times represented by the following formula (1) was calculated.

Variation in cooling time (%) = [(longest time-shortest time) / average time]

X 100

(3) Silicon wafer temperature uniformity

The temperature of the silicon wafer during heating was measured with a thermopure (IR 62 012-00 12 by Nippon Datum) and expressed as the difference between the maximum temperature and the minimum temperature.

(4) Flatness of plate

One point was set to 0 (base point), and how much other 7 points were displaced from the base point was examined with a laser displacement meter, and the average was defined as flatness. h- ¹

Time required for 显 • 30 ο ° Cost required ^^: 300 to 250 ° C.

However, for the resin, it took me a while! ! ^: 暂显 ~ 200 ° C, ^ P required for β: 200-150 ° C.

As shown in Table 1 above, in the hot plate units according to Examples 1 to 9, it was found that the temperature could be raised and lowered in a short time, and the temperature raising and cooling efficiency was high. It was also found that a small amount of power was required to maintain the same temperature.

On the other hand, in the hot plate units according to Comparative Examples 1 to 3, the heating efficiency and the cooling efficiency were poor due to the large roughness of the midsole plate, and the time required for heating and cooling was longer than that of the Examples. I need it.

Further, as can be seen from a comparison between Example 1 and Example 4, the provision of the opening can further reduce the temperature lowering time. Further, as can be seen from the comparative power between Example 4 and Example 5, the temperature of the silicon wafer can be made uniform by increasing the flatness.

Also, as can be seen from the comparison between Example 2 and Example 5, R max is

If it exceeds, the cooling time varies. Possibility of industrial use

As described above, according to the semiconductor manufacturing / inspecting apparatus of the present invention, the surface roughness of the plate-shaped body based on JISB 0601 is Ra = 20 μm or less, and the Heating and heat retention can be performed efficiently, and cooling can be performed efficiently even when the temperature drops.

Further, according to the semiconductor manufacturing / inspection apparatus of the present invention, the semiconductor wafer can be uniformly heated, the variation in the temperature lowering time can be reduced, and a semiconductor-related product such as a silicon wafer having good characteristics can be manufactured. Can be manufactured stably.

Claims

The scope of the claims

1. A semiconductor manufacturing / inspection apparatus comprising: a substrate having a conductor formed on its surface or inside is disposed in a support container having a plate-like body;

A semiconductor manufacturing / inspection apparatus, wherein the plate-like body has a surface roughness based on JIS B 0601 of Ra = 20 μm or less.

2. The semiconductor manufacturing / inspection apparatus according to claim 1, wherein the surface roughness of the plate-like body based on JISB0601 is Ra = 0.05 to 20 µm.

3. The semiconductor manufacturing / inspection apparatus according to claim 1, wherein the plate is a bottom plate or an intermediate bottom plate of a support container.

4. The semiconductor manufacturing / inspection apparatus according to any one of claims 1 to 3, wherein an opening is formed in the plate-like body.

5. The semiconductor manufacturing / inspection apparatus according to any one of claims 1 to 4, wherein a projection or a depression is formed on the plate-like body.

6. The semiconductor manufacturing / inspection apparatus according to any one of claims 1 to 5, wherein the substrate is a ceramic substrate.

7. The semiconductor manufacturing / inspection apparatus according to any one of claims 1 to 5, wherein the substrate is a metal substrate.