WO2002000959A1 - Cathodes destinees au depot cathodique d'alliages de getter et procede de fabrication de ces cathodes - Google Patents
Cathodes destinees au depot cathodique d'alliages de getter et procede de fabrication de ces cathodes Download PDFInfo
- Publication number
- WO2002000959A1 WO2002000959A1 PCT/IT2001/000332 IT0100332W WO0200959A1 WO 2002000959 A1 WO2002000959 A1 WO 2002000959A1 IT 0100332 W IT0100332 W IT 0100332W WO 0200959 A1 WO0200959 A1 WO 0200959A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- alloy
- cathode
- getter
- accordmg
- zirconium
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 84
- 239000000956 alloy Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 230000008021 deposition Effects 0.000 title claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 27
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 21
- 229910052726 zirconium Inorganic materials 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000008187 granular material Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- 229910001093 Zr alloy Inorganic materials 0.000 claims description 3
- 229910002056 binary alloy Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910004353 Ti-Cu Inorganic materials 0.000 claims description 2
- 229910004337 Ti-Ni Inorganic materials 0.000 claims description 2
- 229910011212 Ti—Fe Inorganic materials 0.000 claims description 2
- 229910011209 Ti—Ni Inorganic materials 0.000 claims description 2
- 229910003126 Zr–Ni Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical group [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000320 mechanical mixture Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000011819 refractory material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 229910000531 Co alloy Inorganic materials 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 229910000640 Fe alloy Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- 230000003628 erosive effect Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NDUKHFILUDZSHZ-UHFFFAOYSA-N [Fe].[Zr] Chemical compound [Fe].[Zr] NDUKHFILUDZSHZ-UHFFFAOYSA-N 0.000 description 2
- ZGTNJINJRMRGNV-UHFFFAOYSA-N [V].[Fe].[Zr] Chemical compound [V].[Fe].[Zr] ZGTNJINJRMRGNV-UHFFFAOYSA-N 0.000 description 2
- DNXNYEBMOSARMM-UHFFFAOYSA-N alumane;zirconium Chemical compound [AlH3].[Zr] DNXNYEBMOSARMM-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- ZSJFLDUTBDIFLJ-UHFFFAOYSA-N nickel zirconium Chemical compound [Ni].[Zr] ZSJFLDUTBDIFLJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910001203 Alloy 20 Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- MPMFWZBZMKPZPH-UHFFFAOYSA-N [Mn].[V].[Ti] Chemical compound [Mn].[V].[Ti] MPMFWZBZMKPZPH-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- DIVGJYVPMOCBKD-UHFFFAOYSA-N [V].[Zr] Chemical compound [V].[Zr] DIVGJYVPMOCBKD-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- GFNGCDBZVSLSFT-UHFFFAOYSA-N titanium vanadium Chemical compound [Ti].[V] GFNGCDBZVSLSFT-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/09—Mixtures of metallic powders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J7/00—Details not provided for in the preceding groups and common to two or more basic types of discharge tubes or lamps
- H01J7/14—Means for obtaining or maintaining the desired pressure within the vessel
- H01J7/18—Means for absorbing or adsorbing gas, e.g. by gettering
- H01J7/183—Composition or manufacture of getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
Definitions
- the present invention relates to cathodes to be used in the cathodic deposition of getter alloys and to the process for the manufacture of these cathodes.
- Getter materials are used for removing gases such as oxygen, hydrogen, water and carbon oxides in vacuum, in applications such as television and computer kinescopes, field emission-type flat displays (also known as FED), and metal or glass interspaces for thermal insulation. Getter materials can also be used for removing the above gases from other gases such as nitrogen or rare gases, for example in order to keep constant the composition of the working atmosphere of devices such as lamps (mainly fluorescent ones), plasma displays or microelectronic circuits. Getter materials can be pure metals, mainly zirconium, titanium, niobium, vanadium and tantalum; or alloys, mainly based on zirconium or titanium.
- getter materials require the manufacture of miniaturized getter devices, and particularly of devices having low thickness, of the order of a few microns.
- the miniaturized getter device can be produced separately and then inserted into the final device; it is mainly the case of getters inside the package of microelectronic circuits, or, for example, laser amplifiers for communications on optical fibers, h other applications the getter device must be produced simultaneously with other components of the final device, such as for example in some kind of FEDs, wherein "islands" of getter material are spread over the whole surface of the display and are exposed to the internal evacuated space; or in the ferroelectric memories of computers, wherein getter material deposits are "embedded” in the structure of the device for protecting the ferroelectric material (generally a ceramic) from the contact with hydrogen which in time would affect its functionality Particularly when the manufacture of the getter device has to be integrated with that of the final device, it is desirable to use the same techniques used for the manufacture of other components of the latter.
- a vacuum chamber wherein it is possible to create an electric field is used in this technique.
- a target having generally the shape of a short cylinder
- the chamber is first evacuated and then backfilled with a noble gas atmosphere, generally argon, at a pressure in the range 10 "3 -10 "5 mbar.
- a noble gas atmosphere generally argon
- the species (generally atoms or "clusters" of atoms) derived from the erosion of the target are deposited on the support (as well as on the other available surfaces) thus forming the thin layer.
- a magnetic field is applied to the plasma zone, which helps to confine the plasma itself and improves the features of erosion of the cathode and of deposit formation; this variant is defined in the field as "magnetron".
- the deposit can cover the surface of the support completely, thus obtaining a single continuous deposit, or partially, obtaining deposits only on some zones of the support.
- cathode Since the target is maintained at the cathodic potential, it is also indicated in the field as "cathode", name which will be used in the rest of the description.
- the most commonly used cathodes have the shape of a disk, with diameter varying between about 2 and 30 cm and thickness varying between a few millimeters and about 20 cm, but in some applications also cathodes having other shapes (for example rectangular) and size are used.
- Patent application EP-A-572170 describes a use of the technique for the production of getter metal deposits such as Zr or Ti in field emission displays.
- Patent application EP-A-837502 describes the production of layers of hydrogen getters, formed of nickel, palladium, platinum or oxides thereof by cathodic deposition.
- patent US 5,921,461 describes the production of getter material deposits to be used in the containers of microelectronic devices, indicating as preferred getter materials the metals tantalum, titanium or molybdenum.
- the production of alloys by cathodic deposition can be carried out starting from several different cathodes, one for each component element of the alloy.
- every metal has different features of erosion by the Ar + ions, it is difficult by this method to control the composition of the produced alloy. Therefore, it is certainly preferable to start from a single cathode.
- the various methods that, in principle, could be used for producing a cathode of getter alloy have some drawbacks.
- a first possibility is producing an ingot by castmg a melt having the composition of the desired alloy; however in most cases the cathode has then to be mechanically worked, in order to clean it from fusion slags or to adapt it to the size of the holder in the deposition chamber and, considering the fragility of the alloys, nearly all the cathodes break during these workings.
- Another possibility is the production of an ingot by smterization of powders of getter alloy; however, the getter alloys are difficult to be sintered by compression and subsequent thermal treatment and cathodes prepared in this way have nearly always a low mechanical resistance and break easily during transport or mounting in the deposition chamber.
- Object of the present invention is providing cathodes for the cathodic deposition of getter alloys, as well as a process for the manufacture thereof.
- the first object is obtained according to the present invention by a cathode made of a composite material, formed of: - powders of a getter alloy; and - a cementing component formed of a titanium or zirconium alloy with at least one element selected among iron, cobalt, nickel and copper; wherein the weight of the getter alloy is between about 50% and 90% of the total weiglit of the cathode and wherein the cementing component has a melting point lower than that of the getter alloy.
- - fig. 1 shows a cathode according to the present invention
- - fig. 3 shows a step of the manufacture process of the cathodes according to the invention.
- FIG 1 represents a cathode 10 according to the invention, shaped as a disk; this cathode can have the typical size that was said before.
- Cathode 10 has a main surface 11, which is the one subjected to erosion during the deposition of the getter alloy layer.
- Figure 2 shows h section an enlarged view of a portion of surface 11.
- the cathodes according to the invention are made of a composite material, and are formed of granules 20 of a getter alloy as the major component, and of a cementing component 21 as the minor component.
- the cementing component has the features of having in its turn a composition based on zirconium or titanium, thus similar to that of the getter alloys, and of having a melting point lower than the getter alloy and preferably lower than about 1000 °C. It has been found that the use of cementing components having compositions based on zirconium or titanium allows getter alloy deposits to be obtained that, although having a composition slightly different from that of the alloy which forms the cathode, have features of gas sorption which are essentially similar to the latter.
- the getter alloy used in the cathodes of the invention can be any known getter alloy.
- binary alloys based on zirconium or titanium with one or more other components selected among aluminum, transition elements or rare earths are used; examples of said alloys are the binary alloys zirconium- vanadium, zirconium-iron, zirconium-nickel, zirconium-aluminum, titanium-vanadium and titanium-nickel; the ternary alloys zirconium- vanadium-iron and zirconium- cobalt-rare earths; or alloys with more components.
- the cementing component 21 is an alloy of titanium or zirconium with at least one element selected among iron, cobalt, nickel and copper.
- the cementmg component must have the feature of being more low-melting than the getter alloy, and preferably its melting temperature is lower than about 1000 °C. Suitable for the purposes of the invention are the alloys:
- Zr-Fe having a zirconium weight content between about 81.5 and 86%, and preferably of about 83%;
- Zr-Co having a zirconium weight content between about 80 and 86%, and preferably of about 85%;
- Zr-Ni having a zirconium weight content between about 81 and 84%, and preferably of about 83%
- Zr-Cu having a zirconium weight content between about 8.5 and 15% or between about 43 and 80%, and preferably the alloy having zirconium weight content of about 53%
- Ti-Fe having a titanium weight content of about 67%; Ti-Co having a titanium weight content of about 73%; Ti-Ni having a titanium weiglit content between about 62 and 74%, and preferably of about 72.5%;
- Ti-Cu having a titanium weight content between about 8 and 56%, and preferably of about 21%. h case that the use of the cathode in the previously defined "magnetron" mode is foreseen, it can be preferable to use a cementing component based on copper and not containing the magnetic elements iron, cobalt or nickel, which could interfere with the process.
- the weight of the getter alloy is between 50% and 90% of the total weight of the cathode. With contents of alloy higher than 90% there is too little cementing component, and the mechanical resistance of the catiiode decreases, while for contents of getter alloy lower than about 50% there is an excessive quantity of cementing component which can lead to a composition of the getter layer deposited sensibly different from that of the starting getter alloy.
- the weight of the getter alloy in the cathode is comprised between about 70 and 85%.
- the getter alloy is present in the cathode in powder with granules 20 having size comprised between about 50 and 200 ⁇ m, whereas the cementing component 21 forms a continuous matrix which binds the granules of the getter alloy.
- the invention in a second aspect thereof relates to a process for the manufacture of the previously described cathodes.
- the process will be described with reference to figure 3, which shows an important step thereof.
- a mechanical mixture, 30, of powders 20 of the getter alloy and powders 31 of the cementing component is used as starting material of the process; in the drawing the size of the granules 20 of the alloy is increased for the sake of clarity.
- the mixture 30 is introduced in a mould of suitable shape for the manufacture of the catiiode 10 and brought to a temperature higher than the melting temperature of the cementmg component but lower than the melting temperature of the getter alloy; in this operation the cementing component melts, thus forming a liquid that wets the granules of the getter alloy 20.
- the assembly is allowed to cool and the cementmg component solidifies, thus forming a substantially cylindrical body formed of the matrix 21 which conglomerates the granules 20, which can form the cathode 10 itself or a precursor thereof.
- the two components 20 and 31 are mixed in the weight ratio corresponding to the desired percentage of getter alloy in the final cathode.
- the granules of getter alloy, 20, have the above cited particle size, while the granules of the cementing component, 31, have a size comprised between about 20 and 100 ⁇ m. It has been found that the use of a cementmg component in powder form having an average particle size lower than that of the getter alloy allows to obtain more homogeneous cathodes which have better mechanical properties.
- the mould has been made in two portions, a cylindrical portion 32 and a base 32', easily separable at the end of the process; this structure favors the cathode extraction from the mould.
- the walls of the container are made of a material which does not interact with the cementing component in the melted state; to this end it is possible to use graphite, refractories or metals such as for example molybdenum or iron, the latter being preferred for its low cost; alternatively, it is possible to use other materials, by coating the surfaces which will come into contact with the melt with a material which is inert with respect to it.
- the melting step is carried out by placing the mould containing the mixture 30 in a vacuum oven, with a pressure during the operation lower than 10 "2 mbar. hi this way it is avoided the possibility that the getter alloy reacts with gases present in the working atmosphere, as well as the formation of cavities in the cathode due to gas bubbles.
- the melting step it is also possible to cover the mixture 30 with a weight, having an external diameter equal to the internal diameter of the mould (this possibility is not shown in the drawing); this weight favors the achievement of a more planar and regular upper surface of the cylindrical body, protects the mixture from contact with traces of gases present in the melting oven and avoids the presence of residual porosity in the final product.
- the weight is made by the same measures and materials used for the mould.
- the cylindrical body itself extracted from the mould can form the cathode 10; this cathode has the advantage of being easily machinable, for example by turning, hi order to adapt it to the holder.
- the body extracted from the mould can form a precursor of the cathodes of the invention; as a consequence of the machinability of the composite materials formed of granules of getter alloy in the cementmg matrix, a body having multiple height with respect to that of the desired cathode can be produced; this body can be subsequently divided into several parts, with cuts parallel to each other and perpendicular to the body axis, thus obtaining several equal cathodes from a single fusion.
- the cathodes according to the invention can be used for the production by cathodic deposition of layers of getter alloys on the most different substrates, such as metals, semiconductors (among which mainly silicon), ceramics, glass and plastics. Moreover, these cathodes can be used in deposition processes which may imply the application of a magnetic field ("magnetron" mode) or not; in the first case, the use of cathodes with a cementing component based on copper is preferred.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
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Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001270998A AU2001270998A1 (en) | 2000-06-28 | 2001-06-26 | Cathodes for cathodic deposition of getter alloys and a process for the manufacture thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI2000A001453 | 2000-06-28 | ||
IT2000MI001453A IT1318061B1 (it) | 2000-06-28 | 2000-06-28 | Catodi per deposizione catodica di leghe getter e processo per la loro produzione. |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002000959A1 true WO2002000959A1 (fr) | 2002-01-03 |
Family
ID=11445361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IT2001/000332 WO2002000959A1 (fr) | 2000-06-28 | 2001-06-26 | Cathodes destinees au depot cathodique d'alliages de getter et procede de fabrication de ces cathodes |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001270998A1 (fr) |
IT (1) | IT1318061B1 (fr) |
WO (1) | WO2002000959A1 (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002089174A3 (fr) * | 2001-05-01 | 2003-02-27 | Koninkl Philips Electronics Nv | Lampe a decharge |
WO2002061168A3 (fr) * | 2000-10-24 | 2003-03-13 | Honeywell Int Inc | Procedes de preparation de materiaux metalliques melanges a base de titane et a base de zirconium et cibles de pulverisation |
WO2003044827A3 (fr) * | 2001-11-12 | 2004-03-18 | Getters Spa | Cathode creuse a getter integre pour lampes a decharge et procedes de realisation correspondant |
GB2523583A (en) * | 2014-02-28 | 2015-09-02 | Castings Technology Internat Ltd | Forming a composite component |
CN113136504A (zh) * | 2021-04-24 | 2021-07-20 | 杨阳 | 吸气合金及其应用、吸气靶材及吸气薄膜 |
CN115185169A (zh) * | 2022-09-07 | 2022-10-14 | 上海晶维材料科技有限公司 | 一种用于空间氢原子钟上具有抗粉化能力的吸附泵 |
EP4338866A1 (fr) * | 2022-09-15 | 2024-03-20 | Honeywell International Inc. | Getter evaporable stabilisé pour une poigneabilité accrue |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB723306A (en) * | 1949-03-17 | 1955-02-09 | American Electro Metal Corp | Method of manufacturing a titanium-rich alloy body |
EP0837502A2 (fr) * | 1996-10-15 | 1998-04-22 | Texas Instruments Inc. | Améliorations relatives au piégeage d'hydrogène |
US6027986A (en) * | 1994-12-02 | 2000-02-22 | Saes Getters S.P.A. | Process for producing high-porosity non-evaporable getter materials |
-
2000
- 2000-06-28 IT IT2000MI001453A patent/IT1318061B1/it active
-
2001
- 2001-06-26 WO PCT/IT2001/000332 patent/WO2002000959A1/fr active Application Filing
- 2001-06-26 AU AU2001270998A patent/AU2001270998A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB723306A (en) * | 1949-03-17 | 1955-02-09 | American Electro Metal Corp | Method of manufacturing a titanium-rich alloy body |
US6027986A (en) * | 1994-12-02 | 2000-02-22 | Saes Getters S.P.A. | Process for producing high-porosity non-evaporable getter materials |
EP0837502A2 (fr) * | 1996-10-15 | 1998-04-22 | Texas Instruments Inc. | Améliorations relatives au piégeage d'hydrogène |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6833058B1 (en) | 2000-10-24 | 2004-12-21 | Honeywell International Inc. | Titanium-based and zirconium-based mixed materials and sputtering targets |
WO2002061168A3 (fr) * | 2000-10-24 | 2003-03-13 | Honeywell Int Inc | Procedes de preparation de materiaux metalliques melanges a base de titane et a base de zirconium et cibles de pulverisation |
US6943497B2 (en) | 2001-05-01 | 2005-09-13 | Koninklijke Philips Electronics N.V. | Discharge lamp provided with a getter |
US6800998B2 (en) | 2001-05-01 | 2004-10-05 | Koninklijke Philips Electronics N.V. | Discharge lamp provided with a getter |
WO2002089174A3 (fr) * | 2001-05-01 | 2003-02-27 | Koninkl Philips Electronics Nv | Lampe a decharge |
WO2003044827A3 (fr) * | 2001-11-12 | 2004-03-18 | Getters Spa | Cathode creuse a getter integre pour lampes a decharge et procedes de realisation correspondant |
US6916223B2 (en) | 2001-11-12 | 2005-07-12 | Saes Getters S.P.A. | Discharge lamps using hollow cathodes with integrated getters and methods for manufacturing same |
GB2523583A (en) * | 2014-02-28 | 2015-09-02 | Castings Technology Internat Ltd | Forming a composite component |
GB2523583B (en) * | 2014-02-28 | 2016-09-14 | Castings Tech Int Ltd | Forming a composite component |
CN113136504A (zh) * | 2021-04-24 | 2021-07-20 | 杨阳 | 吸气合金及其应用、吸气靶材及吸气薄膜 |
CN115185169A (zh) * | 2022-09-07 | 2022-10-14 | 上海晶维材料科技有限公司 | 一种用于空间氢原子钟上具有抗粉化能力的吸附泵 |
EP4338866A1 (fr) * | 2022-09-15 | 2024-03-20 | Honeywell International Inc. | Getter evaporable stabilisé pour une poigneabilité accrue |
US12281896B2 (en) | 2022-09-15 | 2025-04-22 | Honeywell International Inc. | Stabilized evaporable getter for increased handleability |
Also Published As
Publication number | Publication date |
---|---|
AU2001270998A1 (en) | 2002-01-08 |
ITMI20001453A0 (it) | 2000-06-28 |
IT1318061B1 (it) | 2003-07-21 |
ITMI20001453A1 (it) | 2001-12-28 |
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