WO2002067271A3 - Imaging systems and particle detectors using silicon enriched by heavier elements - Google Patents
Imaging systems and particle detectors using silicon enriched by heavier elements Download PDFInfo
- Publication number
- WO2002067271A3 WO2002067271A3 PCT/IL2002/000111 IL0200111W WO02067271A3 WO 2002067271 A3 WO2002067271 A3 WO 2002067271A3 IL 0200111 W IL0200111 W IL 0200111W WO 02067271 A3 WO02067271 A3 WO 02067271A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- systems
- silicon
- imaging
- enriched
- imaging systems
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 238000003384 imaging method Methods 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 239000002245 particle Substances 0.000 title abstract 3
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 238000001514 detection method Methods 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000002059 diagnostic imaging Methods 0.000 abstract 1
- 230000007613 environmental effect Effects 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 abstract 1
- 238000009659 non-destructive testing Methods 0.000 abstract 1
- 238000012633 nuclear imaging Methods 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Abstract
An imaging and particle detection system using silicon enriched by heavier elements. An element which has been found to be highly effective in these applications is germanium. The silicon material enriched by germanium has an improved absorption coefficient, which is essential for effective particle detection in imaging applications. At low energies, silicon alone absorbs well. At high energies, silicon enriched by germanium has proven effective. Typical applications include medical imaging systems, x-ray imaging systems, non-destructive testing systems, environmental monitoring systems, nuclear imaging systems, fluorescent chemical analysis systems, and x-ray astronomy systems.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2002232089A AU2002232089A1 (en) | 2001-02-16 | 2002-02-13 | Imaging systems and particle detectors using silicon enriched by heavier elements |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78435101A | 2001-02-16 | 2001-02-16 | |
| US09/784,351 | 2001-02-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002067271A2 WO2002067271A2 (en) | 2002-08-29 |
| WO2002067271A3 true WO2002067271A3 (en) | 2004-03-04 |
Family
ID=25132176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IL2002/000111 WO2002067271A2 (en) | 2001-02-16 | 2002-02-13 | Imaging systems and particle detectors using silicon enriched by heavier elements |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2002232089A1 (en) |
| WO (1) | WO2002067271A2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2849650B1 (en) * | 2003-01-06 | 2006-12-08 | Gerard Lang | BORATE GLASS AS A FONDANT FOR PRODUCING PEARLS INTENDED FOR X-FLUORESCENCE ANALYSIS, AND PROCESS FOR PREPARING SAID GLASS |
| US8237126B2 (en) | 2007-08-17 | 2012-08-07 | Csem Centre Suisse D'electronique Et De Mictrotechnique Sa | X-ray imaging device and method for the manufacturing thereof |
| EP2088451B1 (en) | 2008-02-05 | 2016-01-06 | PANalytical B.V. | Imaging detector |
| CN107112338B (en) | 2014-12-19 | 2019-10-01 | G射线瑞士公司 | Single chip CMOS product volumetric pixel detector and particle detection imaging system and method |
| US10636834B2 (en) | 2015-08-31 | 2020-04-28 | G-Ray Switzerland Sa | Photon counting cone-beam CT apparatus with monolithic CMOS integrated pixel detectors |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6002741A (en) * | 1996-12-20 | 1999-12-14 | The State Of Israel, Atomic Energy Commission Soreq Nuclear Research Center | Technique for obtaining sub-pixel spatial resolution and corrected energy determination from room temperature solid state gamma and X-ray detectors with segmented readout |
| US6169287B1 (en) * | 1997-03-10 | 2001-01-02 | William K. Warburton | X-ray detector method and apparatus for obtaining spatial, energy, and/or timing information using signals from neighboring electrodes in an electrode array |
| US6236050B1 (en) * | 1996-02-02 | 2001-05-22 | TüMER TüMAY O. | Method and apparatus for radiation detection |
-
2002
- 2002-02-13 AU AU2002232089A patent/AU2002232089A1/en not_active Abandoned
- 2002-02-13 WO PCT/IL2002/000111 patent/WO2002067271A2/en not_active Application Discontinuation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236050B1 (en) * | 1996-02-02 | 2001-05-22 | TüMER TüMAY O. | Method and apparatus for radiation detection |
| US6002741A (en) * | 1996-12-20 | 1999-12-14 | The State Of Israel, Atomic Energy Commission Soreq Nuclear Research Center | Technique for obtaining sub-pixel spatial resolution and corrected energy determination from room temperature solid state gamma and X-ray detectors with segmented readout |
| US6169287B1 (en) * | 1997-03-10 | 2001-01-02 | William K. Warburton | X-ray detector method and apparatus for obtaining spatial, energy, and/or timing information using signals from neighboring electrodes in an electrode array |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2002232089A1 (en) | 2002-09-04 |
| WO2002067271A2 (en) | 2002-08-29 |
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