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WO2002041363A3 - System and methods for laser assisted deposition - Google Patents

System and methods for laser assisted deposition Download PDF

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Publication number
WO2002041363A3
WO2002041363A3 PCT/US2001/043586 US0143586W WO0241363A3 WO 2002041363 A3 WO2002041363 A3 WO 2002041363A3 US 0143586 W US0143586 W US 0143586W WO 0241363 A3 WO0241363 A3 WO 0241363A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
laser
assisted deposition
laser assisted
layer
Prior art date
Application number
PCT/US2001/043586
Other languages
French (fr)
Other versions
WO2002041363A2 (en
WO2002041363A9 (en
Inventor
Norman F Dessel
Original Assignee
Solarflex Technologies Inc
Norman F Dessel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/892,131 external-priority patent/US6548751B2/en
Application filed by Solarflex Technologies Inc, Norman F Dessel filed Critical Solarflex Technologies Inc
Priority to AU2002233930A priority Critical patent/AU2002233930A1/en
Publication of WO2002041363A2 publication Critical patent/WO2002041363A2/en
Publication of WO2002041363A3 publication Critical patent/WO2002041363A3/en
Publication of WO2002041363A9 publication Critical patent/WO2002041363A9/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/5813—Thermal treatment using lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Systems and methods for laser assisted deposition use an energy source such as a laser to simultaneously deposit and anneal a thin film of semiconductor or metal material on a substrate. The uniform heating of the deposited material while the layer is being sputtered obviates a subsequent annealing stage. The laser can be pulsed or continuous wave. The substrate can be plastic such as tedlar, mylar, teflon, or tefzel. The systems and methods for laser assisted deposition can be used to manufacture solar cells, such as a cadmium telluride (CdTe) solar cell having a cadmium sulfide (CdS) window layer. Both the techniques of sputtering and sublimation can be used to grow the layer.
PCT/US2001/043586 2000-11-16 2001-11-16 System and methods for laser assisted deposition WO2002041363A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002233930A AU2002233930A1 (en) 2000-11-16 2001-11-16 System and methods for laser assisted deposition

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US24936700P 2000-11-16 2000-11-16
US60/249,367 2000-11-16
US25476000P 2000-12-12 2000-12-12
US60/254,760 2000-12-12
US09/892,131 US6548751B2 (en) 2000-12-12 2001-06-25 Thin film flexible solar cell
US09/892,131 2001-06-25

Publications (3)

Publication Number Publication Date
WO2002041363A2 WO2002041363A2 (en) 2002-05-23
WO2002041363A3 true WO2002041363A3 (en) 2003-05-15
WO2002041363A9 WO2002041363A9 (en) 2003-11-20

Family

ID=27400201

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/043586 WO2002041363A2 (en) 2000-11-16 2001-11-16 System and methods for laser assisted deposition

Country Status (2)

Country Link
AU (1) AU2002233930A1 (en)
WO (1) WO2002041363A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
SE527733C2 (en) 2004-10-08 2006-05-23 Midsummer Ab Device and method for producing solar cells
EP2380213A1 (en) * 2008-12-17 2011-10-26 Sionyx, Inc. Method and apparatus for laser-processing a semiconductor photovoltaic apparatus
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN106449684B (en) 2010-06-18 2019-09-27 西奥尼克斯公司 High-speed photosensitive device and related method
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
CN103946867A (en) 2011-07-13 2014-07-23 西奥尼克斯公司 Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
KR20150130303A (en) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
CN112951933A (en) * 2021-02-24 2021-06-11 青岛科技大学 Method for preparing copper-zinc-tin-sulfur/bismuth sulfide film heterojunction by room temperature pulse laser deposition method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
JPH09148267A (en) * 1995-11-22 1997-06-06 Semiconductor Energy Lab Co Ltd Laser annealing method and laser annealing apparatus
US5739043A (en) * 1992-03-25 1998-04-14 Kanegafuchi Chemical Industry Co., Ltd. Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film
WO2000007250A1 (en) * 1998-07-30 2000-02-10 Agfa-Gevaert Naamloze Vennootschap Method of producing solar cells
DE19904082A1 (en) * 1999-02-02 2000-08-03 Agfa Gevaert Ag Process for the production of solar cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739043A (en) * 1992-03-25 1998-04-14 Kanegafuchi Chemical Industry Co., Ltd. Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
JPH09148267A (en) * 1995-11-22 1997-06-06 Semiconductor Energy Lab Co Ltd Laser annealing method and laser annealing apparatus
WO2000007250A1 (en) * 1998-07-30 2000-02-10 Agfa-Gevaert Naamloze Vennootschap Method of producing solar cells
DE19904082A1 (en) * 1999-02-02 2000-08-03 Agfa Gevaert Ag Process for the production of solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 10 31 October 1997 (1997-10-31) *

Also Published As

Publication number Publication date
WO2002041363A2 (en) 2002-05-23
WO2002041363A9 (en) 2003-11-20
AU2002233930A1 (en) 2002-05-27

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