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WO2001018849A3 - Integrated circuit arrangement with at least a capacitor and a method for the production of the said - Google Patents

Integrated circuit arrangement with at least a capacitor and a method for the production of the said Download PDF

Info

Publication number
WO2001018849A3
WO2001018849A3 PCT/DE2000/003123 DE0003123W WO0118849A3 WO 2001018849 A3 WO2001018849 A3 WO 2001018849A3 DE 0003123 W DE0003123 W DE 0003123W WO 0118849 A3 WO0118849 A3 WO 0118849A3
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
circuit arrangement
production
integrated circuit
side part
Prior art date
Application number
PCT/DE2000/003123
Other languages
German (de)
French (fr)
Other versions
WO2001018849A2 (en
Inventor
Dirk Schumann
Bernhard Sell
Josef Willer
Original Assignee
Infineon Technologies Ag
Dirk Schumann
Bernhard Sell
Josef Willer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Dirk Schumann, Bernhard Sell, Josef Willer filed Critical Infineon Technologies Ag
Priority to EP00972582A priority Critical patent/EP1212782B1/en
Priority to JP2001522574A priority patent/JP3886803B2/en
Priority to DE50014010T priority patent/DE50014010D1/en
Publication of WO2001018849A2 publication Critical patent/WO2001018849A2/en
Publication of WO2001018849A3 publication Critical patent/WO2001018849A3/en
Priority to US10/093,039 priority patent/US6548350B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

The capacitor is arranged on the surface of a substrate (1). A first capacitor electrode has a middle part (M) and a side part (ST),which point vertically upwards, are arranged beside each other and are connected with each other via an upper part (O) located above said middle part (M) and said side part (ST). The middle part (M) is longer than the side part (ST) and is connected with other components of the circuit arrangement located below said middle part (M) and said side part (ST). The first capacitor electrode is provided with a capacitor dielectric (KD). A second capacitor electrode (P) borders the capacitor dielectric (KD).
PCT/DE2000/003123 1999-09-07 2000-09-06 Integrated circuit arrangement with at least a capacitor and a method for the production of the said WO2001018849A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP00972582A EP1212782B1 (en) 1999-09-07 2000-09-06 Method for the production of an integrated circuit arrangement with at least a capacitor
JP2001522574A JP3886803B2 (en) 1999-09-07 2000-09-06 Method for manufacturing an integrated circuit structure having at least one capacitor
DE50014010T DE50014010D1 (en) 1999-09-07 2000-09-06 METHOD FOR PRODUCING AN INTEGRATED CIRCUIT ARRANGEMENT WITH AT LEAST ONE CONDENSER
US10/093,039 US6548350B2 (en) 1999-09-07 2002-03-07 Method of fabricating an integrated circuit configuration with at least one capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19942680.5 1999-09-07
DE19942680A DE19942680A1 (en) 1999-09-07 1999-09-07 Integrated circuit arrangement with at least one capacitor and method for its production

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/093,039 Continuation US6548350B2 (en) 1999-09-07 2002-03-07 Method of fabricating an integrated circuit configuration with at least one capacitor

Publications (2)

Publication Number Publication Date
WO2001018849A2 WO2001018849A2 (en) 2001-03-15
WO2001018849A3 true WO2001018849A3 (en) 2001-06-14

Family

ID=7921090

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/003123 WO2001018849A2 (en) 1999-09-07 2000-09-06 Integrated circuit arrangement with at least a capacitor and a method for the production of the said

Country Status (7)

Country Link
US (1) US6548350B2 (en)
EP (1) EP1212782B1 (en)
JP (1) JP3886803B2 (en)
KR (1) KR100451613B1 (en)
DE (2) DE19942680A1 (en)
TW (1) TW484230B (en)
WO (1) WO2001018849A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0386947A2 (en) * 1989-03-06 1990-09-12 STMicroelectronics, Inc. Dynamic random access memory cell
US5124766A (en) * 1989-06-30 1992-06-23 Texas Instruments Incorporated Filament channel transistor interconnected with a conductor
JPH0917971A (en) * 1995-06-30 1997-01-17 Mitsubishi Electric Corp Capacitor of semiconductor device, and its manufacture
US5604148A (en) * 1996-03-08 1997-02-18 United Microelectronics Corporation Process of fabricating stacked capacitor configuration for dynamic random access memory
DE19720202A1 (en) * 1996-08-16 1998-02-19 United Microelectronics Corp Semiconductor memory device with capacitor formation method, for e.g. DRAM
US5763305A (en) * 1996-08-16 1998-06-09 United Microelectronics Corporation Method for forming a semiconductor memory device with a capacitor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196365A (en) 1989-07-05 1993-03-23 Fujitsu Limited Method of making semiconductor memory device having stacked capacitor
JPH0338061A (en) 1989-07-05 1991-02-19 Fujitsu Ltd Semiconductor memory
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
JPH0846154A (en) * 1994-08-03 1996-02-16 Oki Electric Ind Co Ltd Method of forming storage electrode for capacitor of semiconductor memory
KR0126623B1 (en) * 1994-08-03 1997-12-26 김주용 Method for fabricating capacitors of semiconductor device
JPH08181291A (en) * 1994-12-27 1996-07-12 Mitsubishi Electric Corp Semiconductor device and its manufacture
GB2321774A (en) * 1996-08-16 1998-08-05 United Microelectronics Corp Stacked capacitor
US5756388A (en) * 1997-06-24 1998-05-26 Powerchip Semiconductor Corp. Method for fabricating a rake-shaped capacitor
TW359897B (en) * 1997-11-10 1999-06-01 Winbond Electronics Corp Method for making DRAM capacitor
US6413832B1 (en) * 2001-01-08 2002-07-02 United Microelectronics Corp. Method for forming inner-cylindrical capacitor without top electrode mask

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0386947A2 (en) * 1989-03-06 1990-09-12 STMicroelectronics, Inc. Dynamic random access memory cell
US5124766A (en) * 1989-06-30 1992-06-23 Texas Instruments Incorporated Filament channel transistor interconnected with a conductor
JPH0917971A (en) * 1995-06-30 1997-01-17 Mitsubishi Electric Corp Capacitor of semiconductor device, and its manufacture
US5604148A (en) * 1996-03-08 1997-02-18 United Microelectronics Corporation Process of fabricating stacked capacitor configuration for dynamic random access memory
DE19720202A1 (en) * 1996-08-16 1998-02-19 United Microelectronics Corp Semiconductor memory device with capacitor formation method, for e.g. DRAM
US5763305A (en) * 1996-08-16 1998-06-09 United Microelectronics Corporation Method for forming a semiconductor memory device with a capacitor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 05 30 May 1997 (1997-05-30) *

Also Published As

Publication number Publication date
DE50014010D1 (en) 2007-03-15
KR100451613B1 (en) 2004-10-08
WO2001018849A2 (en) 2001-03-15
US20020137280A1 (en) 2002-09-26
EP1212782B1 (en) 2007-01-24
JP2003509841A (en) 2003-03-11
KR20020026008A (en) 2002-04-04
TW484230B (en) 2002-04-21
JP3886803B2 (en) 2007-02-28
EP1212782A2 (en) 2002-06-12
US6548350B2 (en) 2003-04-15
DE19942680A1 (en) 2001-04-05

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