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WO2001018607A1 - Method and apparatus for determining post exposure bake endpoint using residual gas analysis - Google Patents

Method and apparatus for determining post exposure bake endpoint using residual gas analysis Download PDF

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Publication number
WO2001018607A1
WO2001018607A1 PCT/US2000/010362 US0010362W WO0118607A1 WO 2001018607 A1 WO2001018607 A1 WO 2001018607A1 US 0010362 W US0010362 W US 0010362W WO 0118607 A1 WO0118607 A1 WO 0118607A1
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WO
WIPO (PCT)
Prior art keywords
gas
endpoint
post exposure
exhaust gas
exposure bake
Prior art date
Application number
PCT/US2000/010362
Other languages
French (fr)
Inventor
Michael L. Miller
Original Assignee
Advanced Micro Devices, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices, Inc. filed Critical Advanced Micro Devices, Inc.
Publication of WO2001018607A1 publication Critical patent/WO2001018607A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Definitions

  • TECHNICAL FIELD This invention relates generally to photolithographic techniques for patterning semiconductor devices and, more particularly, to a method and apparatus for determining the endpoint of a post exposure bake process using residual gas analysis
  • a base material such as a substrate material, a metal, an insulator, etc , is coated with a light sensitive material, referred to as a photoresist
  • the photoresist is generally a composition that is sensitive to active rays of light, such as ultraviolet rays, X-rays or electron rays
  • the photoresist is deposited on the base material to selectively protect non-process portions of the substrate
  • Light is then selectively directed onto the photoresist film through a photomask to form photoresist patterns on the base material
  • the photoresist is then developed to remove either the exposed photoresist or the unexposed photoresist
  • photoresist There are generally two types of photoresist, namely positive type and negative type
  • the positive photoresist is of such a type that the exposed portion dissolves in the developer, while the unexposed portion does not dissolve therem
  • the negative photoresist is of the opposite type
  • Certain photoresist materials do not complete the transition from being soluble to being insoluble in the developer based solely on the exposure to light
  • These photoresist materials referred to as chemically-assisted photoresists, are subjected to a post exposure bake process to complete the chemical reaction to transition from soluble to insoluble (* e , for a positive resist)
  • the process of using a chemically-assisted photoresist is described in greater detail in reference to Figures 1A through ID
  • Figure 1A shows a wafer 10 includmg a base material 12 with a photoresist layer 14 deposited thereon
  • the photoresist layer 14 is exposed to a light source through a photomask (not shown) to define exposed regions 16
  • Exposure to the light causes hydrogen free radicals to form in the exposed regions 16 which are on the surface of the photoresist layer 14
  • Figure lC shows a wafer 10 includmg a base material 12 with a photoresist layer 14 deposited thereon
  • the photoresist layer 14 is exposed to a light source through a photomask (not shown) to define exposed regions 16
  • Exposure to the light causes hydrogen free radicals to form in the exposed regions 16 which are on the surface of the photoresist layer 14
  • Figure lC shows a wafer 10 includmg a base material 12 with a photoresist layer 14 deposited thereon
  • the wafer 10 is subjected to a post exposure bake to complete the solubility transition chemical reaction and form baked regions 18 During the post exposure bake, the free radicals diffuse downward and react with the photoresist 14 beneath the exposed regions 16 A developer may then be applied to remove the remaining photoresist 14 (t e , for a positive resist) or to remove the baked portions 18 (/ e , for a negative resist)
  • the post exposure bake time is about 60-90 seconds
  • Critical dimension control may be affected by under or over baking the wafer 10 in the post exposure bake
  • the dashed lines represent the desired critical dimension (/ e , line width)
  • An under-baked region 20 represents the case where the post exposure bake was too short With a shortened bake, the hydrogen free radicals exhibit less lateral diffusion, and as a result the critical dimension is decreased
  • an underbaked region 22 represents the case where the post exposure bake was too long, and the free radicals diffused into the unexposed portion of the photoresist layer 14
  • the critical dimension of the over-baked region 22 is increased beyond the desired critical dimension
  • Other factors may also cause critical dimension variation
  • the present invention is directed to overcoming, or at least reducing the effects of, one or more of the problems set forth above DISCLOSURE OF INVENTION
  • One aspect of the present invention ts seen in a method for determining an endpoint for a post exposure bake An exposed wafer is provided A post exposure bake is initiated An exhaust gas is measured to generate gas measurements The endpoint is determined based on the gas measurements The post exposure bake is terminated in response to determining the endpoint
  • the processing tool includes an oven a bake plate, an exhaust line, a gas analyzer and a control unit
  • the bake plate is positioned within the oven and adapted to receive the wafer
  • the exhaust line is coupled to the oven
  • the gas analyzer is coupled to the exhaust line and adapted to generate gas measurements of an exhaust gas m the exhaust line
  • the control unit is adapted to receive the gas measurements, determine an endpoint based on the gas measurements, and terminate a post exposure bake of the wafer in response to determining the endpoint
  • Figure IB is a cross-section view of the substrate of Figure 1 A after the photoresist has been exposed to a light source
  • Figure 1C is a cross-section view of the substrate of Figure IB after the substrate has been subjected to a post exposure bake process
  • Figure ID is a cross-section of the substrate of Figure IB illustrating deviations caused by variations m the post exposure bake times
  • Figure 2 is a simplified diagram of a processing tool capable of determining the end pomt of a post exposure bake process
  • Figures 3 A and 3B are cross-section views of a wafer being subjected to a post exposure bake
  • Figure 4 is a curve representmg the gas concentration measured by a gas analyzer of the processing tool of
  • Figure 5 is a diagram illustrating a method for determining the end point of a post exposure bake process
  • the processmg tool 100 includes an oven 105 with a baking plate 1 10
  • a wafer 1 15 is positioned, typically by a robot (not shown), on the baking plate 1 10 for the post exposure baking process
  • a control unit 120 controls the operation of the processmg tool 100 in accordance with a predetermined recipe
  • the processing tool 100 also includes a gas supply line 125 for introducing gases into the oven 105 and a gas exhaust line 130 for receiving exhaust gases
  • a gas analyzer 135 monitors the exhaust gases to identify residual gas concentrations useful for monitormg the progress of the post exposure bake process
  • FIG. 3 A a cross-sectional view of a semiconductor device 200 with a base material 205 is shown
  • An exposed photoresist layer 210 havmg exposed regions 215, is formed on the base material 205
  • the exposed regions 215 grow to form the baked regions 220, as shown m Figure 3B
  • gas 225 (/ e , represented by wavy arrows) is given off by the photoresist layer 210 as a result of the chemical reaction taking place to change the solubility of the baked regions 220
  • the specific gas 225 depends on the particular type of photoresist layer 210 being used
  • some photoresist systems produce a water vapor (/ e , H 2 0) gaseous discharge
  • Gas analyzers 135 specific to the type of gas to be monitored are commonly available
  • a gas analyzer 135 suitable for monitoring water vapor concentration is a model HPR-30, sold by Hiden Analytical, Ltd As the post exposure bake nears completion, the
  • Figure 4 is a curve representing the concentration of the gas 225 vs time as the post exposure bake progresses As shown in Figure 4, the concentration of the gas 225 measured by the gas analyzer 135 decreases as the post exposure bake progresses
  • the curve of Figure 4 is provided for illustrative purposes and does not necessarily represent an actual concentration curve
  • An actual concentration curve will vary depending on the specific pattern being formed in the photoresist layer 210, the specific type of photoresist being used, the thickness of the photoresist layer 210, etc
  • An end point 400 of the post exposure bake may be determined by characterization of the concentration data
  • the end pomt 400 may be determined based on first order theoretical computations of the photoresist, or alternatively, the end point 400 may be determined by empirical characterization data It is contemplated that the end point 400 may be based on a particular concentration level (/ e , cutoff value), concentration rate of change (/ e , slope of concentration curve - 1 st derivative), 2 nd order rate of change (z e , 2 nd derivative of concentration), total gas exhausted (/ e , integration of concentration curve), or some combination thereof The end point may also be selected to compensate for some other cause of variation in the critical dimension previously identified (e g , variations m stepper intensity or exposure time)
  • the method may be implemented by the control unit 120 of Figure 2
  • an exposed wafer is introduced into the processing tool 100
  • the post exposure bake is initiated in block 510, and measurements of the exhausted gas 225 are taken in block 520
  • the end point 400 may be implemented by the control unit 120 of Figure 2
  • an exposed wafer is introduced into the processing tool 100

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A method for determining an endpoint for a post exposure bake is provided. An exposed wafer is provided. A post exposure bake is initiated. An exhaust gas is measured to generate gas measurements. The endpoint is determined based on the gas measurements. The post exposure bake is terminated in response to determining the endpoint. A processing tool (100) for processing a wafer includes an oven (105), a bake plate (110), an exhaust line (130), a gas analyzer (135), and a control unit (120). The bake plate (110) is positioned within the oven and adapted to receive the wafer (115). The exhaust line (130) is coupled to the oven (105). The gas analyzer (135) is coupled to the exhaust line (130) and adapted to generate gas measurements of an exhaust gas in the exhaust line (130). The control unit (120) is adapted to receive the gas measurements, determine an endpoint based on the gas measurements, and terminate a post exposure bake of the wafer in response to determining the endpoint.

Description

METHOD AND APPARATUS FOR DETERMINING POST EXPOSURE BAKE ENDPOINT
USING RESIDUAL GAS ANALYSIS
TECHNICAL FIELD This invention relates generally to photolithographic techniques for patterning semiconductor devices and, more particularly, to a method and apparatus for determining the endpoint of a post exposure bake process using residual gas analysis
BACKGROUND ART Conventionally, semiconductor devices are patterned using photolithographic processes A base material, such as a substrate material, a metal, an insulator, etc , is coated with a light sensitive material, referred to as a photoresist The photoresist is generally a composition that is sensitive to active rays of light, such as ultraviolet rays, X-rays or electron rays The photoresist is deposited on the base material to selectively protect non-process portions of the substrate Light is then selectively directed onto the photoresist film through a photomask to form photoresist patterns on the base material The photoresist is then developed to remove either the exposed photoresist or the unexposed photoresist
There are generally two types of photoresist, namely positive type and negative type The positive photoresist is of such a type that the exposed portion dissolves in the developer, while the unexposed portion does not dissolve therem, and the negative photoresist is of the opposite type Certain photoresist materials do not complete the transition from being soluble to being insoluble in the developer based solely on the exposure to light These photoresist materials, referred to as chemically-assisted photoresists, are subjected to a post exposure bake process to complete the chemical reaction to transition from soluble to insoluble (* e , for a positive resist) The process of using a chemically-assisted photoresist is described in greater detail in reference to Figures 1A through ID
Figure 1A shows a wafer 10 includmg a base material 12 with a photoresist layer 14 deposited thereon In Figure IB, the photoresist layer 14 is exposed to a light source through a photomask (not shown) to define exposed regions 16 Exposure to the light causes hydrogen free radicals to form in the exposed regions 16 which are on the surface of the photoresist layer 14 In Figure lC. the wafer 10 is subjected to a post exposure bake to complete the solubility transition chemical reaction and form baked regions 18 During the post exposure bake, the free radicals diffuse downward and react with the photoresist 14 beneath the exposed regions 16 A developer may then be applied to remove the remaining photoresist 14 (t e , for a positive resist) or to remove the baked portions 18 (/ e , for a negative resist)
Typically, for a deep UV photoresist layer 14, the post exposure bake time is about 60-90 seconds Critical dimension control may be affected by under or over baking the wafer 10 in the post exposure bake Referring to Figure 1 D, the dashed lines represent the desired critical dimension (/ e , line width) An under-baked region 20 represents the case where the post exposure bake was too short With a shortened bake, the hydrogen free radicals exhibit less lateral diffusion, and as a result the critical dimension is decreased Conversely, an underbaked region 22 represents the case where the post exposure bake was too long, and the free radicals diffused into the unexposed portion of the photoresist layer 14 As a result, the critical dimension of the over-baked region 22 is increased beyond the desired critical dimension Other factors may also cause critical dimension variation The present invention is directed to overcoming, or at least reducing the effects of, one or more of the problems set forth above DISCLOSURE OF INVENTION
One aspect of the present invention ts seen in a method for determining an endpoint for a post exposure bake An exposed wafer is provided A post exposure bake is initiated An exhaust gas is measured to generate gas measurements The endpoint is determined based on the gas measurements The post exposure bake is terminated in response to determining the endpoint
Another aspect of the present invention is seen in a processing tool for processing a wafer The processing tool includes an oven a bake plate, an exhaust line, a gas analyzer and a control unit The bake plate is positioned within the oven and adapted to receive the wafer The exhaust line is coupled to the oven The gas analyzer is coupled to the exhaust line and adapted to generate gas measurements of an exhaust gas m the exhaust line The control unit is adapted to receive the gas measurements, determine an endpoint based on the gas measurements, and terminate a post exposure bake of the wafer in response to determining the endpoint
BRIEF DESCRIPTION OF THE DRAWINGS The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which Figures 1A is a cross-section view of a prior art substrate with a layer of photoresist formed thereon,
Figure IB is a cross-section view of the substrate of Figure 1 A after the photoresist has been exposed to a light source,
Figure 1C is a cross-section view of the substrate of Figure IB after the substrate has been subjected to a post exposure bake process, Figure ID is a cross-section of the substrate of Figure IB illustrating deviations caused by variations m the post exposure bake times,
Figure 2 is a simplified diagram of a processing tool capable of determining the end pomt of a post exposure bake process,
Figures 3 A and 3B are cross-section views of a wafer being subjected to a post exposure bake, Figure 4 is a curve representmg the gas concentration measured by a gas analyzer of the processing tool of
Figure 2 as the post exposure bake progresses, and
Figure 5 is a diagram illustrating a method for determining the end point of a post exposure bake process
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described m detail It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the mvention as defined by the appended claims
MODE(S) FOR CARRYING OUT THE INVENTION
Illustrative embodiments of the invention are described below In the interest of clarity, not all features of an actual implementation are described in this specification It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure
-9- Referring now to the figures, and in particular, to Figure 2, a simplified diagram of a processing tool 100 capable of determining the end point of a post exposure bake process is provided The processmg tool 100 includes an oven 105 with a baking plate 1 10 A wafer 1 15 is positioned, typically by a robot (not shown), on the baking plate 1 10 for the post exposure baking process A control unit 120 controls the operation of the processmg tool 100 in accordance with a predetermined recipe The processing tool 100 also includes a gas supply line 125 for introducing gases into the oven 105 and a gas exhaust line 130 for receiving exhaust gases A gas analyzer 135 monitors the exhaust gases to identify residual gas concentrations useful for monitormg the progress of the post exposure bake process
Referring briefly to Figure 3 A, a cross-sectional view of a semiconductor device 200 with a base material 205 is shown An exposed photoresist layer 210, havmg exposed regions 215, is formed on the base material 205 As the post exposure bake progresses, the exposed regions 215 grow to form the baked regions 220, as shown m Figure 3B During the bake, gas 225 (/ e , represented by wavy arrows) is given off by the photoresist layer 210 as a result of the chemical reaction taking place to change the solubility of the baked regions 220 The specific gas 225 depends on the particular type of photoresist layer 210 being used For example, some photoresist systems produce a water vapor (/ e , H20) gaseous discharge Gas analyzers 135 specific to the type of gas to be monitored are commonly available For example, a gas analyzer 135 suitable for monitoring water vapor concentration is a model HPR-30, sold by Hiden Analytical, Ltd As the post exposure bake nears completion, the concentration of the gas 225 decreases, as illustrated by the reduced number of wavy arrows in Figure 3B The gas analyzer 135 monitors the gas 225 concentration, and signals the control unit 120 when an endpoint for the post exposure bake has been reached
Figure 4 is a curve representing the concentration of the gas 225 vs time as the post exposure bake progresses As shown in Figure 4, the concentration of the gas 225 measured by the gas analyzer 135 decreases as the post exposure bake progresses The curve of Figure 4 is provided for illustrative purposes and does not necessarily represent an actual concentration curve An actual concentration curve will vary depending on the specific pattern being formed in the photoresist layer 210, the specific type of photoresist being used, the thickness of the photoresist layer 210, etc An end point 400 of the post exposure bake may be determined by characterization of the concentration data
The end pomt 400 may be determined based on first order theoretical computations of the photoresist, or alternatively, the end point 400 may be determined by empirical characterization data It is contemplated that the end point 400 may be based on a particular concentration level (/ e , cutoff value), concentration rate of change (/ e , slope of concentration curve - 1 st derivative), 2nd order rate of change (z e , 2nd derivative of concentration), total gas exhausted (/ e , integration of concentration curve), or some combination thereof The end point may also be selected to compensate for some other cause of variation in the critical dimension previously identified (e g , variations m stepper intensity or exposure time) Turning now to Figure 5, a flow diagram of a method for determining the endpoint of a post exposure bake process is shown In the illustrated embodiment, the method may be implemented by the control unit 120 of Figure 2 In block 500, an exposed wafer is introduced into the processing tool 100 The post exposure bake is initiated in block 510, and measurements of the exhausted gas 225 are taken in block 520 The end point 400 is determined in block 530 based on the gas 225 measurements In block 540, the post exposure bake is terminated based on the endpoint determination Determining the end point 400 as described above provides a more consistent post exposure bake, thus reducing the variations in the features patterned by the photoresist layer 210 More consistent features have the effect of increasing product yield and allowing for more accurate placement of features (e g , self-aligned features) above those patterned by the photoresist layer 210 The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention Accordingly, the protection sought herein is as set forth in the claims below

Claims

1. A method for determining an endpoint for a post exposure bake, comprising: providing an exposed wafer; initiating a post exposure bake; measuring an exhaust gas to generate gas measurements; determining the endpoint based on the gas measurements; and terminating the post exposure bake in response to determining the endpoint.
2. The method of claim 1, wherein measuring the exhaust gas includes measuring the concentration of the exhaust gas.
3. The method of claim 2, wherein determining the endpoint includes determining the endpoint based on at least one of the concentration of the exhaust gas, a rate of change in the concentration of the exhaust gas, and a quantity of the exhaust gas being measured.
4. A method for patterning a wafer ( 10), comprising: depositing a photoresist layer (14) over at least a portion of a base layer (12) of the wafer (10); exposing at least a portion of the photoresist layer (14) to form exposed regions (16); initiating a post exposure bake of the wafer (10); measuring an exhaust gas to generate gas measurements; comparing the gas measurement to a preselected endpoint; and terminating the post exposure bake in response to the gas measurements being less than the preselected endpoint.
5. The method of claim 4, wherein measuring the exhaust gas includes measuring the concentration of the exhaust gas.
6. The method of claim 5, wherein determining the endpoint includes determining the endpoint based on at least one of the concentration of the exhaust gas, a rate of change in the concentration of the exhaust gas, and a quantity of the exhaust gas being measured.
7. A processing tool (100) for processing a wafer (1 15), comprising: an oven (105); a bake plate (1 10) positioned within the oven (105) and adapted to receive the wafer (115); an exhaust line (130) coupled to the oven (105); a gas analyzer (135) coupled to the exhaust line (130) and adapted to generate gas measurements of an exhaust gas in the exhaust line (130); and a control unit (120) adapted to receive the gas measurements, compare an endpoint to the gas measurements, and terminate a post exposure bake of the wafer (1 15) in response to the gas measurements exceeding the endpoint.
8. The processing tool of claim 7, wherein the gas analyzer (135) is adapted to measure the concentration of the exhaust gas.
9. The processing tool of claim 13, wherein the control unit (120) is adapted to determine the endpoint based on at least one of the concentration of the exhaust gas, a rate of change in the concentration of the exhaust gas, and a quantity of the exhaust gas being measured.
PCT/US2000/010362 1999-09-08 2000-04-18 Method and apparatus for determining post exposure bake endpoint using residual gas analysis WO2001018607A1 (en)

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Cited By (3)

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US20120070564A1 (en) * 2010-09-20 2012-03-22 Tokyo Electron Limited Bake Plate Exhaust Monitor
CN105161395A (en) * 2015-08-11 2015-12-16 上海华力微电子有限公司 Plasma etching apparatus and plasma etching method
WO2022155396A1 (en) 2021-01-14 2022-07-21 Texas Instruments Incorporated Exhaust gas monitor for photoresist adhesion control

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120070564A1 (en) * 2010-09-20 2012-03-22 Tokyo Electron Limited Bake Plate Exhaust Monitor
US8808788B2 (en) * 2010-09-20 2014-08-19 Tokyo Electron Limited Processing a wafer with a post application bake (PAB) procedure
CN105161395A (en) * 2015-08-11 2015-12-16 上海华力微电子有限公司 Plasma etching apparatus and plasma etching method
WO2022155396A1 (en) 2021-01-14 2022-07-21 Texas Instruments Incorporated Exhaust gas monitor for photoresist adhesion control
EP4278376A4 (en) * 2021-01-14 2024-07-31 Texas Instruments Incorporated EXHAUST GAS MONITORING DEVICE FOR PHOTORESIN ADHESION REGULATION

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