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WO2001011673A3 - Verfahren zum ätzen von wismuthaltigen oxidfilmen - Google Patents

Verfahren zum ätzen von wismuthaltigen oxidfilmen Download PDF

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Publication number
WO2001011673A3
WO2001011673A3 PCT/DE2000/002652 DE0002652W WO0111673A3 WO 2001011673 A3 WO2001011673 A3 WO 2001011673A3 DE 0002652 W DE0002652 W DE 0002652W WO 0111673 A3 WO0111673 A3 WO 0111673A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide
containing bismuth
films containing
oxide films
etching solution
Prior art date
Application number
PCT/DE2000/002652
Other languages
English (en)
French (fr)
Other versions
WO2001011673A2 (de
Inventor
Frank Hintermaier
Original Assignee
Infineon Technologies Ag
Frank Hintermaier
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Frank Hintermaier filed Critical Infineon Technologies Ag
Priority to JP2001516233A priority Critical patent/JP2003506895A/ja
Priority to EP00958225A priority patent/EP1203405A2/de
Publication of WO2001011673A2 publication Critical patent/WO2001011673A2/de
Publication of WO2001011673A3 publication Critical patent/WO2001011673A3/de
Priority to US10/073,829 priority patent/US6669857B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Memories (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Erfindungsgemäss wird ein Verfahren zum Ätzen von Oxidfilmen bereitgestellt, wobei der Oxidfilm zumindest ein wismuthaltiges Oxid, insbesondere ein ferroelektrisches wismuthaltiges Mischoxid, umfasst. Das Verfahren beinhaltet die Schritte a) ein Substrat wird bereitgestellt, auf dem zumindest ein Oxidfilm, der zumindest ein wismuthaltiges Oxid umfasst, aufgebracht ist, b) eine Ätzlösung wird mit dem Substrat in Kontakt gebracht, so dass die Ätzlösung mit dem Oxidfilm reagieren kann, wobei die Ätzlösung 2 bis 20 Gewichtsprozent eines Fluorid-Ionen Donors, 15 bis 60 Gewichtsprozent Salpetersäure und 20 bis 83 Gewichtsprozent Wasser umfasst, und c) die Ätzlösung wird von dem Substrat entfernt. Die Ätzlösung wird auch in einem Verfahren zur Strukturierung von wismuthaltigen Oxidfilmen verwendet.
PCT/DE2000/002652 1999-08-09 2000-08-09 Verfahren zum ätzen von wismuthaltigen oxidfilmen WO2001011673A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001516233A JP2003506895A (ja) 1999-08-09 2000-08-09 ビスマス含有酸化膜のエッチング方法
EP00958225A EP1203405A2 (de) 1999-08-09 2000-08-09 Verfahren zum ätzen von wismuthaltigen oxidfilmen
US10/073,829 US6669857B2 (en) 1999-08-09 2002-02-11 Process for etching bismuth-containing oxide films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19937503A DE19937503C1 (de) 1999-08-09 1999-08-09 Verfahren zum Ätzen von wismuthaltigen Oxidfilmen
DE19937503.8 1999-08-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/073,829 Continuation US6669857B2 (en) 1999-08-09 2002-02-11 Process for etching bismuth-containing oxide films

Publications (2)

Publication Number Publication Date
WO2001011673A2 WO2001011673A2 (de) 2001-02-15
WO2001011673A3 true WO2001011673A3 (de) 2001-07-05

Family

ID=7917703

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/002652 WO2001011673A2 (de) 1999-08-09 2000-08-09 Verfahren zum ätzen von wismuthaltigen oxidfilmen

Country Status (8)

Country Link
US (1) US6669857B2 (de)
EP (1) EP1203405A2 (de)
JP (1) JP2003506895A (de)
KR (1) KR100463364B1 (de)
CN (1) CN1252802C (de)
DE (1) DE19937503C1 (de)
TW (1) TW466635B (de)
WO (1) WO2001011673A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10244862B4 (de) * 2002-09-23 2006-09-14 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Verfahren zur Herstellung eines elektronischen Bauelements mit einer Praseodymoxid-Schicht
US20040188385A1 (en) * 2003-03-26 2004-09-30 Kenji Yamada Etching agent composition for thin films having high permittivity and process for etching
US20090212021A1 (en) * 2005-06-13 2009-08-27 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
KR101294906B1 (ko) 2006-11-16 2013-08-08 동우 화인켐 주식회사 반도체 소자 제조공정의 선택적 식각액
WO2008061258A2 (en) * 2006-11-17 2008-05-22 Sachem, Inc. Selective metal wet etch composition and process
WO2010086745A1 (en) * 2009-02-02 2010-08-05 Atmi Taiwan Co., Ltd. Method of etching lanthanum-containing oxide layers
JP2013102089A (ja) * 2011-11-09 2013-05-23 Adeka Corp チタン酸鉛系材料用エッチング剤組成物
KR20140086669A (ko) * 2012-12-28 2014-07-08 동우 화인켐 주식회사 금속 산화물막의 식각액 조성물
KR20140086668A (ko) * 2012-12-28 2014-07-08 동우 화인켐 주식회사 금속 산화물막의 식각액 조성물
KR20140086666A (ko) * 2012-12-28 2014-07-08 동우 화인켐 주식회사 금속 산화물막의 식각액 조성물
KR102456079B1 (ko) * 2014-12-24 2022-11-21 삼성디스플레이 주식회사 산화물 제거용 세정 조성물 및 이를 이용한 세정 방법
KR102776603B1 (ko) * 2021-06-24 2025-03-07 재단법인대구경북과학기술원 비스무트 정제 방법 및 비스무트 정제장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810852A (ja) * 1981-07-10 1983-01-21 Fujitsu Ltd 半導体装置
US5708302A (en) * 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
EP0968979A1 (de) * 1998-06-30 2000-01-05 Siemens Aktiengesellschaft Ätzen von Metalloxidkeramiken auf Bi-Basis

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925079A (en) * 1972-06-16 1975-12-09 Richard W F Hager Decorative article and method of making same
US4759823A (en) 1987-06-02 1988-07-26 Krysalis Corporation Method for patterning PLZT thin films
US5407855A (en) * 1993-06-07 1995-04-18 Motorola, Inc. Process for forming a semiconductor device having a reducing/oxidizing conductive material
US5873977A (en) * 1994-09-02 1999-02-23 Sharp Kabushiki Kaisha Dry etching of layer structure oxides

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810852A (ja) * 1981-07-10 1983-01-21 Fujitsu Ltd 半導体装置
US5708302A (en) * 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
EP0968979A1 (de) * 1998-06-30 2000-01-05 Siemens Aktiengesellschaft Ätzen von Metalloxidkeramiken auf Bi-Basis

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 198312, Derwent World Patents Index; AN 1983-28885k, XP002157992 *

Also Published As

Publication number Publication date
JP2003506895A (ja) 2003-02-18
DE19937503C1 (de) 2001-01-04
KR20020027531A (ko) 2002-04-13
CN1399792A (zh) 2003-02-26
US20020130105A1 (en) 2002-09-19
TW466635B (en) 2001-12-01
WO2001011673A2 (de) 2001-02-15
KR100463364B1 (ko) 2004-12-29
US6669857B2 (en) 2003-12-30
EP1203405A2 (de) 2002-05-08
CN1252802C (zh) 2006-04-19

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