WO2001003879A1 - Friction fit target assembly - Google Patents
Friction fit target assembly Download PDFInfo
- Publication number
- WO2001003879A1 WO2001003879A1 PCT/US2000/018968 US0018968W WO0103879A1 WO 2001003879 A1 WO2001003879 A1 WO 2001003879A1 US 0018968 W US0018968 W US 0018968W WO 0103879 A1 WO0103879 A1 WO 0103879A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- recited
- backing plate
- assembly
- mating
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000002093 peripheral effect Effects 0.000 claims abstract description 16
- 230000013011 mating Effects 0.000 claims description 23
- 238000003466 welding Methods 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 238000005304 joining Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000000945 filler Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 238000000429 assembly Methods 0.000 abstract description 4
- 230000000712 assembly Effects 0.000 abstract description 4
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000007596 consolidation process Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P11/00—Connecting or disconnecting metal parts or objects by metal-working techniques not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Definitions
- the present application pertains to a low temperature sputter target backing plate joining technique and to assemblies made thereby.
- a target and backing plate are provided wherein the harder material of the two is machined or otherwise formed so as to have a plurality of ridges or other salient surface portions thereof. These ridges or salient portions are formed along the interior surface of the target or backing plate. The ridged surface is then placed alongside the mating surface of the other member of the assembly along the target/backing plate interface wherein joining will occur.
- the peripheral portion of the interfacial surface assembly, surrounding the ridges or salient portions, is joined by conventional means such as electron beam welding, TIG welding, friction welding, soldering, brazing, etc., preferably under vacuum.
- the assembly is then pressed at a low temperature, preferably at room temperature.
- the projections or ridges formed along either the target or backing plate bend upon penetration into the mating metal surface along the target/backing plate interface and form an interlocking grip over the softer metal on the opposing mating surface.
- a target and backing plate wherein both materials are similar in mechanical properties and both are machined or otherwise formed so as to have a plurality of ridges and grooves or other salient surface portions thereof. These ridges or salient portion are formed along the interior surface of the target or backing plate.
- the ridged surface is then placed alongside the mating surface (having appropriately positioned mating members) of the other member of the assembly along the target/backing plate interface wherein joining will occur.
- the peripheral portion of the interfacial surface assembly is joined by conventional means such as electron beam welding, TIG welding, friction welding, soldering, brazing, etc., preferably under vacuum.
- the assembly is then pressed at a low temperature, preferably at room temperature.
- the projections or ridges formed along either the target or backing plate penetrate into the mating members along the target/backing plate interface. The projections penetrate into the grooves on the opposing mating surface.
- FIG. 1 is a schematic cross sectional view of a target and backing plate assembly showing the friction fit joining mechanisms in the form of cylindrical male projections ready for insertion into cylindrical bores;
- Fig. 2 is a schematic cross section showing another embodiment of the joining members having square male projections in one member and correspondingly square shaped recesses formed in the other member;
- Fig. 3 is a schematic cross sectional view of the assembly shown in
- Fig. 4 is a schematic cross sectional view of the assembly shown in Fig. 2 in the mating or joined position;
- Fig. 5 is a partially exploded perspective view of the assembly of Fig. 1 before bonding
- Fig. 6 is a partially exploded perspective view of the assembly of Fig. 2 before bonding.
- Fig. 1 there is shown a target backing plate assembly.
- the assembly comprises a target 2 having a top side 23 carrying metal or metal alloy that, in accordance with conventional sputtering methods, will be ejected from the target via ionic bombardment and will travel to and coat the desired substrate.
- a backing plate 4 is provided under the target, with the bottom side 11 of the target adapted to mate with the top side 13 of the backing plate to define an interfacial surface area 28.
- a heat exchange fluid such as water is circulated adjacent the bottom side 21 of the backing plate so as to cool the assembly during its sputtering operation.
- a plurality of cylindrical male projections 8 are machined into the surface 11.
- the surface 13 is provided with cylindrical female bore members 9 of smaller diameter than the diameter of the male projections 8.
- a filler material 6 such as an Al 4%Si alloy or other suitable alloy, in the form of a ring or the like, adjacent the peripheral border 25 of the assembly between the target and backing plate.
- the filler material 6 enhances bonding of the target to the backing plate as shall be explained hereinafter.
- the assembly is first bonded around the peripheral border 25.
- This initial bonding along the peripheral border of the assembly may be achieved by conventional means such as by E-beam welding under vacuum conditions, TIG welding, and friction welding and the like.
- the bonding of the peripheral boundaries of the target and backing plate is performed via E-beam welding under vacuum conditions.
- the assembly is consolidated, via pressure application thereto, at pressure of about 50 tons - 5,000 tons; preferably less than about 1,000 tons, under low temperature conditions.
- the male members 8 are friction fit into the corresponding female bores 9.
- the assembly may be subjected to a low temperature annealing step conducted at temperatures of about room to 400°C for a period of 0.5 to 4 hours. This will help ensure adequate adhesion of the pressure consolidated surfaces.
- low temperature pressure consolidation refers to pressure consolidation that may occur at temperatures of less than about 50% of the melting temperature of the lower melting member of the target and backing plate. Preferably, this temperature is less than about 200°C; most preferably at about room temperature up to about 38 °C.
- Fig. 2 there is shown another embodiment of the invention wherein the target and backing plate may be joined by low temperature pressure consolidation.
- the male projections 8 are in the form of elongated square cross sectioned members that are force fit into square recesses 9 formed in the backing plate 4.
- Figs. 3 and 4 show the assemblies of Figs. 1 and 2 respectively in their mated positions in which, by reason of the low temperature pressure consolidation, the projecting male members are frictionally free fit in their mating, female recesses and in which the target and backing plate are bondingly joined.
- Fig. 5 shows, in perspective, the male and female coupling members of the Fig. 1 embodiment.
- Male members 8 are in the form of a cylindrical dowellike projection adapted for mating with the cylindrical bores 9.
- the bores 9 have a smaller id than the od of the projecting male members 8.
- the male members 8 and the bores 9 are arranged in a pattern of concentrically arranged annular rows.
- Fig. 6 depicts the male/female mating members shown in the Fig. 2 embodiment.
- the male members 8 are in the form of elongated square cross- sectioned studs adapted for reception into the smaller openings 9.
- Al target to Al backing plates may be joined using the methods herein disclosed.
- Other target to backing plate combinations are possible provide the mechanical characteristics of the metals such as hardness and thermal expansion, are similar.
- the present invention provides advantage over diffusion bonding and other joining techniques that require higher temperatures in the consolidation. Higher temperature conditions sometimes result in undesirable grain growth in the target metal.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001509338A JP2003504513A (en) | 1999-07-12 | 2000-07-12 | Friction fit target assembly |
US10/030,996 US6725522B1 (en) | 2000-07-12 | 2000-07-12 | Method of assembling target and backing plates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14331499P | 1999-07-12 | 1999-07-12 | |
US60/143,314 | 1999-07-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001003879A1 true WO2001003879A1 (en) | 2001-01-18 |
Family
ID=22503516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/018968 WO2001003879A1 (en) | 1999-07-12 | 2000-07-12 | Friction fit target assembly |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2003504513A (en) |
KR (1) | KR100823045B1 (en) |
TW (1) | TW483793B (en) |
WO (1) | WO2001003879A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1349698A1 (en) * | 2000-12-15 | 2003-10-08 | Tosoh Smd, Inc. | Friction fit target assembly for high power sputtering operation |
WO2004024972A2 (en) * | 2002-09-13 | 2004-03-25 | Tosoh Smd, Inc. | Systems and methods for a target and backing plate assembly |
WO2010045026A2 (en) * | 2008-10-15 | 2010-04-22 | Applied Materials, Inc. | Control of erosion profile on a dielectric rf sputter target |
US8404310B2 (en) | 2007-08-02 | 2013-03-26 | Dow Global Technologies Llc | Thermoset dampener material |
CN104646817A (en) * | 2014-12-22 | 2015-05-27 | 有研亿金新材料有限公司 | Connection method of aluminum target material as sputtering target material and aluminum alloy backboard |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4706926B2 (en) * | 2006-03-17 | 2011-06-22 | 三菱マテリアル株式会社 | Method for manufacturing target with backing plate |
US8702919B2 (en) * | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5236373A (en) * | 1975-09-17 | 1977-03-19 | Hitachi Ltd | Automtaic insertion method of articles |
US5009765A (en) * | 1990-05-17 | 1991-04-23 | Tosoh Smd, Inc. | Sputter target design |
US5143590A (en) * | 1991-07-10 | 1992-09-01 | Johnson Matthey Inc. | Method of manufacturing sputtering target assembly |
US5269899A (en) * | 1992-04-29 | 1993-12-14 | Tosoh Smd, Inc. | Cathode assembly for cathodic sputtering apparatus |
US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
-
2000
- 2000-07-07 TW TW089113506A patent/TW483793B/en not_active IP Right Cessation
- 2000-07-12 KR KR1020027000435A patent/KR100823045B1/en not_active Expired - Fee Related
- 2000-07-12 JP JP2001509338A patent/JP2003504513A/en active Pending
- 2000-07-12 WO PCT/US2000/018968 patent/WO2001003879A1/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5236373A (en) * | 1975-09-17 | 1977-03-19 | Hitachi Ltd | Automtaic insertion method of articles |
US5009765A (en) * | 1990-05-17 | 1991-04-23 | Tosoh Smd, Inc. | Sputter target design |
US5143590A (en) * | 1991-07-10 | 1992-09-01 | Johnson Matthey Inc. | Method of manufacturing sputtering target assembly |
US5269899A (en) * | 1992-04-29 | 1993-12-14 | Tosoh Smd, Inc. | Cathode assembly for cathodic sputtering apparatus |
US5836506A (en) * | 1995-04-21 | 1998-11-17 | Sony Corporation | Sputter target/backing plate assembly and method of making same |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1349698A1 (en) * | 2000-12-15 | 2003-10-08 | Tosoh Smd, Inc. | Friction fit target assembly for high power sputtering operation |
EP1349698A4 (en) * | 2000-12-15 | 2008-01-16 | Tosoh Smd Inc | Friction fit target assembly for high power sputtering operation |
WO2004024972A2 (en) * | 2002-09-13 | 2004-03-25 | Tosoh Smd, Inc. | Systems and methods for a target and backing plate assembly |
WO2004024972A3 (en) * | 2002-09-13 | 2004-05-27 | Tosoh Smd Inc | Systems and methods for a target and backing plate assembly |
KR101024831B1 (en) * | 2002-09-13 | 2011-03-25 | 토소우 에스엠디, 인크 | Systems and Methods for Target and Backing Plate Assembly |
US8404310B2 (en) | 2007-08-02 | 2013-03-26 | Dow Global Technologies Llc | Thermoset dampener material |
WO2010045026A2 (en) * | 2008-10-15 | 2010-04-22 | Applied Materials, Inc. | Control of erosion profile on a dielectric rf sputter target |
WO2010045026A3 (en) * | 2008-10-15 | 2010-07-01 | Applied Materials, Inc. | Control of erosion profile on a dielectric rf sputter target |
CN102187431B (en) * | 2008-10-15 | 2014-08-20 | 应用材料公司 | Control of erosion profile on a dielectric RF sputter target |
CN104646817A (en) * | 2014-12-22 | 2015-05-27 | 有研亿金新材料有限公司 | Connection method of aluminum target material as sputtering target material and aluminum alloy backboard |
Also Published As
Publication number | Publication date |
---|---|
TW483793B (en) | 2002-04-21 |
KR20020037746A (en) | 2002-05-22 |
JP2003504513A (en) | 2003-02-04 |
KR100823045B1 (en) | 2008-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6725522B1 (en) | Method of assembling target and backing plates | |
EP1349698B1 (en) | Friction fit target assembly for high power sputtering operation | |
US6749103B1 (en) | Low temperature sputter target bonding method and target assemblies produced thereby | |
US8235277B2 (en) | Sputtering target assembly and method of making same | |
US7146703B2 (en) | Low temperature sputter target/backing plate method and assembly | |
EP1115899B1 (en) | Low temperature sputter target bonding method and target assemblies produced thereby | |
US20100038241A1 (en) | Systems and methods for a target and backing plate assembly | |
US20060065517A1 (en) | Target and method of diffusion bonding target to backing plate | |
JP2003535212A5 (en) | ||
WO2007038651A1 (en) | Inertial bonding method of forming a sputtering target assembly and assembly made therefrom | |
WO2001003879A1 (en) | Friction fit target assembly | |
JP4017198B2 (en) | Joining method of sputtering target and backing plate | |
US4468552A (en) | Method of applying hard surfaces to gate valves and the like | |
JPS58141880A (en) | Joining method of sintered hard alloy | |
US20210205919A1 (en) | Methods Of Joining Dissimilar Metals Without Detrimental Intermetallic Compounds | |
US20060231534A1 (en) | Method of laser welding coated members | |
JPS5890385A (en) | Manufacture of composite wear resistance member | |
WO2004024972A2 (en) | Systems and methods for a target and backing plate assembly | |
US5265791A (en) | Metal alloy solid state joining by local interfacial strain control | |
KR20050019134A (en) | Target and method of diffusion bonding target to backing plate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): JP KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 10030996 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027000435 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027000435 Country of ref document: KR |
|
122 | Ep: pct application non-entry in european phase |