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WO2001095352A3 - Appareil et procede ameliorant l'acceleration des electrons - Google Patents

Appareil et procede ameliorant l'acceleration des electrons Download PDF

Info

Publication number
WO2001095352A3
WO2001095352A3 PCT/US2001/017190 US0117190W WO0195352A3 WO 2001095352 A3 WO2001095352 A3 WO 2001095352A3 US 0117190 W US0117190 W US 0117190W WO 0195352 A3 WO0195352 A3 WO 0195352A3
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
vhf
plasma reactor
wafer chuck
accelerating electrons
Prior art date
Application number
PCT/US2001/017190
Other languages
English (en)
Other versions
WO2001095352A2 (fr
Inventor
Bill H Quon
Jovan Jevtic
Thomas H Windhorn
Wayne L Johnson
Original Assignee
Tokyo Electron Ltd
Bill H Quon
Jovan Jevtic
Thomas H Windhorn
Wayne L Johnson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Bill H Quon, Jovan Jevtic, Thomas H Windhorn, Wayne L Johnson filed Critical Tokyo Electron Ltd
Priority to AU2001265057A priority Critical patent/AU2001265057A1/en
Priority to JP2002502799A priority patent/JP2003536250A/ja
Publication of WO2001095352A2 publication Critical patent/WO2001095352A2/fr
Publication of WO2001095352A3 publication Critical patent/WO2001095352A3/fr
Priority to US10/307,484 priority patent/US20030094239A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention porte sur un appareil et un procédé fournissant une tension de polarisation au plateau porte-tranches d'un réacteur à plasma présentant: une source de tension RF de fréquence relativement basse; une source de tension VHF de fréquence supérieure à la source de tension RF; et un circuit de couplage connecté entre les deux sources et le plateau et lui appliquant une combinaison des tensions RF et VHF.
PCT/US2001/017190 2000-06-02 2001-05-29 Appareil et procede ameliorant l'acceleration des electrons WO2001095352A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2001265057A AU2001265057A1 (en) 2000-06-02 2001-05-29 Apparatus and method for improving electron acceleration
JP2002502799A JP2003536250A (ja) 2000-06-02 2001-05-29 電子の加速を改善するための装置及び方法
US10/307,484 US20030094239A1 (en) 2000-06-02 2002-12-02 Apparatus and method for improving electron ecceleration

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20856800P 2000-06-02 2000-06-02
US60/208,568 2000-06-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/307,484 Continuation US20030094239A1 (en) 2000-06-02 2002-12-02 Apparatus and method for improving electron ecceleration

Publications (2)

Publication Number Publication Date
WO2001095352A2 WO2001095352A2 (fr) 2001-12-13
WO2001095352A3 true WO2001095352A3 (fr) 2002-05-30

Family

ID=22775074

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/017190 WO2001095352A2 (fr) 2000-06-02 2001-05-29 Appareil et procede ameliorant l'acceleration des electrons

Country Status (4)

Country Link
JP (1) JP2003536250A (fr)
AU (1) AU2001265057A1 (fr)
TW (1) TW506012B (fr)
WO (1) WO2001095352A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4388287B2 (ja) * 2003-02-12 2009-12-24 東京エレクトロン株式会社 プラズマ処理装置及び高周波電力供給装置
CN101989525A (zh) * 2009-08-05 2011-03-23 中微半导体设备(上海)有限公司 具备可切换偏置频率的等离子体处理腔及可切换匹配网络
JP7250663B2 (ja) * 2018-12-19 2023-04-03 東京エレクトロン株式会社 プラズマ処理装置及びインピーダンスの整合方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0495524A1 (fr) * 1991-01-18 1992-07-22 Applied Materials, Inc. Système de traitement d'un pièce dans un plasma et procédé de génération dudit plasma
JPH10270419A (ja) * 1997-03-24 1998-10-09 Hitachi Ltd プラズマエッチング装置およびプラズマエッチング方法
US5846885A (en) * 1995-08-23 1998-12-08 Fujitsu Limited Plasma treatment method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0495524A1 (fr) * 1991-01-18 1992-07-22 Applied Materials, Inc. Système de traitement d'un pièce dans un plasma et procédé de génération dudit plasma
US5846885A (en) * 1995-08-23 1998-12-08 Fujitsu Limited Plasma treatment method
JPH10270419A (ja) * 1997-03-24 1998-10-09 Hitachi Ltd プラズマエッチング装置およびプラズマエッチング方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01 29 January 1999 (1999-01-29) *

Also Published As

Publication number Publication date
TW506012B (en) 2002-10-11
AU2001265057A1 (en) 2001-12-17
JP2003536250A (ja) 2003-12-02
WO2001095352A2 (fr) 2001-12-13

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