WO2001082372A1 - Polymer stud grid array having feedthroughs and method for producing a substrate for a polymer stud grid array of this type - Google Patents
Polymer stud grid array having feedthroughs and method for producing a substrate for a polymer stud grid array of this type Download PDFInfo
- Publication number
- WO2001082372A1 WO2001082372A1 PCT/DE2001/000679 DE0100679W WO0182372A1 WO 2001082372 A1 WO2001082372 A1 WO 2001082372A1 DE 0100679 W DE0100679 W DE 0100679W WO 0182372 A1 WO0182372 A1 WO 0182372A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- depressions
- grid array
- holes
- polymer
- Prior art date
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
- H05K1/116—Lands, clearance holes or other lay-out details concerning the surrounding of a via
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/119—Details of rigid insulating substrates therefor, e.g. three-dimensional details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09118—Moulded substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/0959—Plated through-holes or plated blind vias filled with insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09845—Stepped hole, via, edge, bump or conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0094—Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
Definitions
- Integrated circuits are getting more and more connections and are being miniaturized more and more.
- the difficulties with solder paste application and assembly expected from this increasing miniaturization are to be remedied by new housing shapes, in particular single, few or multi-chip modules in the ball grid array package to be emphasized here (DE-Z productronic 5, 1994, Pages 54, 55).
- These modules are based on a plated-through substrate on which the chips are contacted, for example, via contact wires or by means of flip chip assembly.
- BGA Ball Grid Array
- the ball grid array comprises solder bumps arranged flat on the underside of the substrate, which enable surface mounting on the printed circuit boards or assemblies. Due to the flat arrangement of the solder bumps, large numbers of connections can be realized in a coarse grid of, for example, 1.27 mm.
- MID Molded Interconnection Devices
- MID Molded Interconnection Devices
- High-quality thermoplastics which are suitable for injection molding three-dimensional substrates, form the basis of this technology.
- Thermoplastics of this type are distinguished from conventional substrate materials for printed circuits by better mechanical, chemical, electrical and environmental properties.
- the structuring of a metal layer applied to the injection molded parts is carried out by dispensing with the mask technology which is otherwise customary by means of a special layer.
- CD 03 " i) ⁇ ⁇ a ⁇ 0 ⁇ 0 & ⁇ ⁇ 0 P- ⁇ 0 -J P- ⁇ P- ⁇ ⁇ ⁇ ⁇ 0 O PJ ⁇ ⁇ ⁇ ⁇ P- ⁇
- an injection-molded, three-dimensional substrate made of an electrically insulating polymer, polymer bumps arranged flat on the underside of the substrate and molded during injection molding,
- the production of the external connections on the polymer bumps can also be carried out with minimal effort together with the production of the conductor tracks, which is common in MID technology. Due to the preferred fine laser structuring, the external connections on the polymer bumps with high numbers of connections can be realized in a fine grid. It should also be emphasized that the temperature expansion of the polymer bumps corresponds to the temperature expansion of the substrate and the wiring that receives the module. As a result, high reliability of the soldered connection is achieved even with frequent temperature fluctuations.
- German patent application 100 37 292.9-33 a method for producing a substrate for a polymer stud grid array by hot stamping was proposed as an alternative to injection molding.
- a raw body preferably a film
- bumps and / or depressions are produced on at least one surface by means of a stamp.
- a material for the substrates ⁇ c ⁇ D f ⁇ P 1 I- 1 cn o t ⁇ o Cn o Cn
- the depth of the through holes is considerably reduced by the depth of the depressions, so that the introduction of through holes into the bottom of the depressions takes only a very short time.
- Another advantage is that the recesses create clean and burr-free edges on the corresponding surface of the substrate.
- the through holes which are graduated in their geometry, enable simple sealing by means of solder mask or the like, so that with the so-called transfer gold, i.e. when encapsulating a chip applied to the substrate, the material used for the encapsulation cannot flow to the opposite side of the substrate.
- the two-stage production of through-holes with depressions formed during the hot stamping of the substrate and subsequently through holes made in the bottom of the wells also offers a number of advantages, of which the rapid production of the through-holes and the simple sealing of the stepped through-holes are particularly noteworthy.
- the embodiment according to claims 2 or 9 favors the removal of the substrate produced by injection molding or by hot stamping from the injection mold.
- the embodiment according to claims 4 or 10 enables particularly clean edges of the via holes on the top of the substrate.
- the configuration according to claims 5 or 11 enables particularly clean edges of the via holes on the underside of the substrate.
- the development according to claim 6 or 13 enables a particularly rapid introduction of the through holes into the bottom of the depressions, this time for the introduction of the through holes being able to be shortened even further by the development according to claim 7 or 14.
- the embodiment according to claim 12 enables the production of two or more vias in the area of a single recess.
- the through holes are preferably made by drilling in the bottom of the wells. According to claim 16, the through holes can be made very quickly in the bottom of the depressions by laser drilling with little effort.
- FIG. 1 shows a section through a substrate for a polymer stud grid array after the injection molding process
- FIG. 2 shows the detail II according to FIG. 1
- FIG. 3 shows a section corresponding to FIG.
- FIG. 4 shows a section according to FIG. 3 after the application and structuring of a metallization
- FIG. 5 shows the section of Figure 4 after sealing the
- FIG. 6 shows a section through a second embodiment of a substrate for a polymer stud grid array after the injection molding process
- FIG. 7 shows a section corresponding to FIG. 6 after through holes have been made
- FIG. 8 shows a section through a third embodiment of a substrate for a polymer stud grid array with four through holes per depression
- Figure 9 is a plan view of the recess and the through holes of the substrate shown in Figure 8 and
- Figure 10 shows the geometry of the via holes of the substrate shown in Figure 3.
- FIG. 1 shows a section through a substrate S for a polymer stud grid array, the substrate S being provided on its underside U with a multiplicity of integrally molded "polymer studs" or polymer bumps PS.
- the polymer bumps PS which are stepped on their underside, are also formed during the injection molding of the substrate S, as are the funnel-shaped depressions VI which are introduced into the upper side 0 of the substrate S.
- the funnel-shaped depressions VI are located at those points on the substrate S at which plated-through holes later are to form electrically conductive connections between the top 0 and bottom U of the substrate S.
- High-temperature resistant thermoplastics such as polyetherimide or polyethersulfone are suitable as substrate material, however (LCP (Liquid Crystalline Polymers) is preferably used.
- FIG. 2 shows the detail II of FIG. 1 with two funnel-shaped depressions VI made in the upper side of the substrate S.
- the bottom of each funnel-shaped depression VI is denoted by B1.
- through holes DL1 are introduced into the injection molded part shown in FIG. 2, which, together with the depressions VI, form via holes.
- the through holes DL1 made in the bottom B1 are produced, for example, by mechanical drilling or by laser drilling, the hole being produced both from the top 0 to the bottom U and from the bottom c ⁇ c ⁇ f MP 1 P 1
- through holes DL2 are then introduced according to FIG. 7, which form via holes together with the depressions V2.
- the via holes DL2 made in the bottom B2 of the depressions V2 can also be produced here again by mechanical drilling or by laser drilling.
- FIG. 9 shows a section through a third embodiment of a substrate S for a polymer stud grid array.
- a total of four through holes DL3 are made in the bottom B3 of a depression V3 formed during the injection molding of the substrate S, the distribution of which in the depression V3 can be seen from the top view shown in FIG. 9.
- FIG. 9 also shows that the depression V3 has a square shape here.
- FIG. 10 shows the geometry of the through-holes of the substrate S shown in FIG. 3 in a highly simplified schematic representation.
- the conical depression VI has on the upper side 0 of the substrate S a diameter denoted by a, while the diameter in the region of the bottom B1 ( see FIG. 2) is denoted by b.
- the through hole DL1 made in the bottom B1 of the depression VI has a diameter denoted by d.
- the thickness of the substrate S without taking into account the height of the polymer bumps PS is denoted by s, while the depths of
- Well VI and through hole DLl are designated t and c, respectively.
- a typical substrate S consisting of LCP with laser-drilled through holes DL1 the following dimensions can be specified, for example: a 0, 20 mm b 0, 14 mm d 0, 10 mm s 0, 35 mm t 0, 25 mm c 0, 10 mm
- the exemplary embodiments of the invention described above can also be implemented in a corresponding manner in the manufacture of the substrates by hot stamping.
- a raw body preferably a film
- the polymer bumps and the depressions are produced in one operation by means of an embossing stamp.
- Further details of the production of substrates for a polymer stud grid array by hot stamping are described in German patent application 100 37 292.9-33, the disclosure of which is part of the present patent application.
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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Abstract
The invention relates to a polymer stud grid array having feedthroughs and to a method for producing a substrate for a polymer stud grid array of this type. During injection molding or hot stamping of the substrate (S) for a polymer stud grid array, polymer protuberances (PS) are formed on the underside (U) and recesses (V1) are formed on the top side (O) or on the underside (U). Through holes (DL1) are placed in the bottoms (B1) of the recesses (V1), especially by means of laser boring, in order to form feedthrough holes. The feedthrough holes are produced quickly and with little effort.
Description
Beschreibungdescription
Polymer Stud Grid Array mit Durchkonta tierungen und Verfahren zur Herstellung eines Substrats für ein derartiges Poly- mer Stud Grid ArrayPolymer stud grid array with vias and method for producing a substrate for such a polymer stud grid array
Integrierte Schaltkreise bekommen immer höhere Anschlußzahlen und werden dabei immer weiter miniaturisiert. Die bei dieser zunehmenden Miniaturisierung erwarteten Schwierigkeiten mit Lotpastenauftrag und Bestückung sollen durch neue Gehäuseformen behoben werden, wobei hier insbesondere Single-, Few- o- der Multi-Chip-Module im Ball Grid Array Package hervorzuheben sind (DE-Z productronic 5, 1994, Seiten 54, 55) . Diese Module basieren auf einem durchkontaktierten Substrat, auf welchem die Chips beispielsweise über Kontaktierdrähte oder mittels Flipchip-Montage kontaktiert sind. An der Unterseite des Substrats befindet sich das Ball Grid Array (BGA) , das häufig auch als Solder Grid Array oder Solder Bump Array bezeichnet wird. Das Ball Grid Array umfaßt auf der Unterseite des Substrats flächig angeordnete Lothöcker, die eine Oberflächenmontage auf den Leiterplatten oder Baugruppen ermöglichen. Durch die flächige Anordnung der Lothöcker können hohe Anschlußzahlen in einem groben Raster von beispielsweise 1,27 mm realisiert werden.Integrated circuits are getting more and more connections and are being miniaturized more and more. The difficulties with solder paste application and assembly expected from this increasing miniaturization are to be remedied by new housing shapes, in particular single, few or multi-chip modules in the ball grid array package to be emphasized here (DE-Z productronic 5, 1994, Pages 54, 55). These modules are based on a plated-through substrate on which the chips are contacted, for example, via contact wires or by means of flip chip assembly. On the underside of the substrate is the Ball Grid Array (BGA), which is often referred to as a Solder Grid Array or a Solder Bump Array. The ball grid array comprises solder bumps arranged flat on the underside of the substrate, which enable surface mounting on the printed circuit boards or assemblies. Due to the flat arrangement of the solder bumps, large numbers of connections can be realized in a coarse grid of, for example, 1.27 mm.
Bei der sog. MID-Technologie (MID = Moulded Interconnection Devices) werden anstelle konventioneller gedruckter Schaltungen Spritzgießteile mit integrierten Leiterzügen verwendet. Hochwertige Thermoplaste, die sich zum Spritzgießen von drei- dimensionalen Substraten eignen, sind die Basis dieser Technologie. Derartige Thermoplaste zeichnen sich gegenüber herkömmlichen Substratmaterialien für gedruckte Schaltungen durch bessere mechanische, chemische, elektrische und umwelttechnische Eigenschaften aus. Bei einer bevorzugten Richtung der MID-Technologie erfolgt die Strukturierung einer auf die Spritzgießteile aufgebrachten Metallschicht unter Verzicht auf die sonst übliche Maskentechnik durch ein spezielles La-
ω ω N3 IV) P1 P1 c_π o Cn o U1 o CnSo-called MID technology (MID = Molded Interconnection Devices) uses injection molded parts with integrated conductor tracks instead of conventional printed circuits. High-quality thermoplastics, which are suitable for injection molding three-dimensional substrates, form the basis of this technology. Thermoplastics of this type are distinguished from conventional substrate materials for printed circuits by better mechanical, chemical, electrical and environmental properties. In a preferred direction of MID technology, the structuring of a metal layer applied to the injection molded parts is carried out by dispensing with the mask technology which is otherwise customary by means of a special layer. ω ω N3 IV) P 1 P 1 c_π o Cn o U1 o Cn
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neue für Single-, Few- oder Multi-Chip-Module geeignete Bauform umfaßtnew design suitable for single, Few or multi-chip modules
- ein spritzgegossene, dreidimensionales Substrat aus einem elektrisch isolierenden Polymer, - auf der Unterseite des Substrats flächig angeordnete und beim Spritzgießen mitgeformte Polymerhöcker,an injection-molded, three-dimensional substrate made of an electrically insulating polymer, polymer bumps arranged flat on the underside of the substrate and molded during injection molding,
- auf den Polymerhöckern durch eine lösbare Endoberfläche gebildete Außenanschlüsse,- external connections formed on the polymer bumps by a detachable end surface,
- zumindest auf der Unterseite des Substrats ausgebildete Leiterzüge, die die Außenanschlüsse mit Innenanschlüssen verbinden, und- Conductor tracks formed at least on the underside of the substrate, which connect the external connections to internal connections, and
- mindestens einen auf dem Substrat angeordneten Chip, dessen Anschlüsse mit den Innenanschlüssen elektrisch leitend verbunden sind.- At least one chip arranged on the substrate, the connections of which are electrically conductively connected to the internal connections.
Neben der einfachen und kostengünstigen Herstellung der Polymerhöcker beim Spritzgießen des Substrats kann auch die Herstellung der Außenanschlüsse auf den Polymerhöckern mit minimalem Aufwand zusammen mit der bei der MID-Technologie übli- chen Herstellung der Leiterzüge vorgenommen werden. Durch die bevorzugte Laserfeinstrukturierung können die Außenanschlüsse auf den Polymerhöckern mit hohen Anschlußzahlen in einem feinen Raster realisiert werden. Hervorzuheben ist ferner, daß die Temperaturausdehnung der Polymerhöcker den Temperaturaus- dehnungen des Substrats und der das Modul aufnehmenden Verdrahtung entspricht. Hierdurch wird auch bei häufigen Temperaturschwankungen eine hohe Zuverlässigkeit der Lötverbindung erreicht .In addition to the simple and cost-effective production of the polymer bumps during the injection molding of the substrate, the production of the external connections on the polymer bumps can also be carried out with minimal effort together with the production of the conductor tracks, which is common in MID technology. Due to the preferred fine laser structuring, the external connections on the polymer bumps with high numbers of connections can be realized in a fine grid. It should also be emphasized that the temperature expansion of the polymer bumps corresponds to the temperature expansion of the substrate and the wiring that receives the module. As a result, high reliability of the soldered connection is achieved even with frequent temperature fluctuations.
In der deutschen Patentanmeldung 100 37 292.9-33 wurde als Alternative zum Spritzgießen ein Verfahren zur Herstellung eines Substrats für ein Polymer Stud Grid Array durch Heißprägen vorgeschlagen. Bei diesem Verfahren wird ein Rohkörper, vorzugsweise eine Folie, erwärmt, worauf auf mindestens einer Oberfläche Höcker und/oder Vertiefungen mittels eines Prägestempels erzeugt werden. Als Material für die Substrate
ω cυ D fυ P1 I-1 cn o tπ o Cn o CnIn German patent application 100 37 292.9-33, a method for producing a substrate for a polymer stud grid array by hot stamping was proposed as an alternative to injection molding. In this method, a raw body, preferably a film, is heated, whereupon bumps and / or depressions are produced on at least one surface by means of a stamp. As a material for the substrates ω cυ D fυ P 1 I- 1 cn o tπ o Cn o Cn
denähte. Andererseits wird durch die Tiefe der Vertiefungen die Tiefe der Durchgangslöcher erheblich reduziert, so dass das Einbringen von Durchgangslöchern in den Boden der Vertiefungen nur eine sehr kurze Zeit in Anspruch nimmt. Ein weite- rer Vorteil ist, dass durch die Vertiefungen saubere und gratfreie Kanten an der entsprechenden Oberfläche des Substrats entstehen. Schließlich ermöglichen die in ihrer Geometrie abgestuften Durchgangslöcher eine einfache Abdichtung durch Lötstopplack oder dergl., so dass bei dem sog. Trans- fermolden, d.h. bei der Verkapselung eines auf das Substrat aufgebrachten Chips das für die Verkapselung verwendete Material nicht auf die gegenüberliegende Seite des Substrats fließen kann.denähte. On the other hand, the depth of the through holes is considerably reduced by the depth of the depressions, so that the introduction of through holes into the bottom of the depressions takes only a very short time. Another advantage is that the recesses create clean and burr-free edges on the corresponding surface of the substrate. Finally, the through holes, which are graduated in their geometry, enable simple sealing by means of solder mask or the like, so that with the so-called transfer gold, i.e. when encapsulating a chip applied to the substrate, the material used for the encapsulation cannot flow to the opposite side of the substrate.
Die zweistufige Herstellung von Durchkontaktierungslöchern mit beim Heißprägen des Substrats mitgeformten Vertiefungen und anschließend in den Boden der Vertiefungen eingebrachten Durchkontaktierungslöchern bietet ebenfalls etliche Vorteile, von welchen insbesondere die rasche Herstellung der Durch- gangslöcher und die einfache Abdichtung der abgestuften Durchgangslöcher hervorzuheben sind.The two-stage production of through-holes with depressions formed during the hot stamping of the substrate and subsequently through holes made in the bottom of the wells also offers a number of advantages, of which the rapid production of the through-holes and the simple sealing of the stepped through-holes are particularly noteworthy.
Vorteilhafte Ausgestaltungen des erfindungsgemäßen Polymer Stud Grid Arrays gehen aus den Ansprüchen 2 bis 7 hervor.Advantageous refinements of the polymer stud grid array according to the invention emerge from claims 2 to 7.
Vorteilhafte Ausgestaltungen des erfindungsgemäßen Verfahrens zur Herstellung eines Substrats für ein Polymer Stud Grid Array sind in den Ansprüchen 9 bis 16 angegeben.Advantageous refinements of the method according to the invention for producing a substrate for a polymer stud grid array are specified in claims 9 to 16.
Die Ausgestaltung nach den Ansprüchen 2 oder 9 begünstigt die Entfernung des durch Spritzgießen oder durch Heißprägen hergestellten Substrats aus der Spritzgießform.The embodiment according to claims 2 or 9 favors the removal of the substrate produced by injection molding or by hot stamping from the injection mold.
Die Ausgestaltung nach den Ansprüchen 4 oder 10 ermöglicht besonders saubere Kanten der Durchkontaktierungslöcher auf der Oberseite des Substrats.
Die Ausgestaltung nach den Ansprüchen 5 oder 11 ermöglicht besonders saubere Kanten der Durchkontaktierungslöcher auf der Unterseite des Substrats.The embodiment according to claims 4 or 10 enables particularly clean edges of the via holes on the top of the substrate. The configuration according to claims 5 or 11 enables particularly clean edges of the via holes on the underside of the substrate.
Die Weiterbildung nach Anspruch 6 oder 13 ermöglicht ein besonders rasches Einbringen der Durchgangslöcher in den Boden der Vertiefungen, wobei diese Zeit für das Einbringen der Durchgangslöcher durch die Weiterbildung nach Anspruch 7 oder 14 noch weiter verkürzt werden kann.The development according to claim 6 or 13 enables a particularly rapid introduction of the through holes into the bottom of the depressions, this time for the introduction of the through holes being able to be shortened even further by the development according to claim 7 or 14.
Die Ausgestaltung nach Anspruch 12 ermöglicht die Erzeugung von zwei oder mehreren Durchkontaktierungen im Bereich einer einzigen Vertiefung.The embodiment according to claim 12 enables the production of two or more vias in the area of a single recess.
Gemäß Anspruch 15 werden die Durchgangslöcher vorzugsweise durch Bohren in den Boden der Vertiefungen eingebracht. Gemäß Anspruch 16 kann das Einbringen der Durchgangslöcher in den Boden der Vertiefungen durch Laserbohren mit geringem Aufwand sehr rasch durchgeführt werden.According to claim 15, the through holes are preferably made by drilling in the bottom of the wells. According to claim 16, the through holes can be made very quickly in the bottom of the depressions by laser drilling with little effort.
Ausführungsbeispiele der Erfindung sind in der Zeichnung dargestellt und werden im folgenden näher beschrieben. Es zeigen Figur 1 einen Schnitt durch ein Substrat für ein Polymer Stud Grid Array nach dem Spritzgießvorgang,Embodiments of the invention are shown in the drawing and are described in more detail below. 1 shows a section through a substrate for a polymer stud grid array after the injection molding process,
Figur 2 die Einzelheit II gemäß Figur 1, Figur 3 einen der Figur 2 entsprechenden Schnitt nach dem2 shows the detail II according to FIG. 1, FIG. 3 shows a section corresponding to FIG
Einbringen von Durchgangslöchern, Figur 4 einen Schnitt gemäß Figur 3 nach dem Aufbringen und Strukturieren einer Metallisierung,Making through holes, FIG. 4 shows a section according to FIG. 3 after the application and structuring of a metallization,
Figur 5 den Schnitt gemäß Figur 4 nach dem Abdichten derFigure 5 shows the section of Figure 4 after sealing the
Durchkontaktierungslöcher, Figur 6 einen Schnitt durch eine zweite Ausführungsform eines Substrats für ein Polymer Stud Grid Array nach dem Spritzgießvorgang,Via holes, FIG. 6 shows a section through a second embodiment of a substrate for a polymer stud grid array after the injection molding process,
Figur 7 einen der Figur 6 entsprechenden Schnitt nach dem Einbringen von Durchgangslöchern,
Figur 8 einen Schnitt durch eine dritte Ausführungsform eines Substrats für ein Polymer Stud Grid Array mit vier Durchgangslöchern pro Vertiefung,FIG. 7 shows a section corresponding to FIG. 6 after through holes have been made, FIG. 8 shows a section through a third embodiment of a substrate for a polymer stud grid array with four through holes per depression,
Figur 9 eine Draufsicht auf die Vertiefung und die Durchgangslöcher des in Figur 8 dargestellten Substrats undFigure 9 is a plan view of the recess and the through holes of the substrate shown in Figure 8 and
Figur 10 die Geometrie der Durchkontaktierungslöcher des in Figur 3 dargestellten Substrats.Figure 10 shows the geometry of the via holes of the substrate shown in Figure 3.
Figur 1 zeigt einen Schnitt durch ein Substrat S für ein Polymer Stud Grid Array, wobei das Substrat S auf seiner Unterseite U mit einer Vielzahl von integral angeformten "Polymer Studs" bzw. Polymerhöckern PS versehen ist. Die auf ihrer Unterseite abgestuften Polymerhöcker PS werden beim Spritzgie- ßen des Substrats S mitgeformt, ebenso wie die in die Oberseite 0 des Substrats S eingebrachten trichterförmigen Vertiefungen VI. Die trichterförmigen Vertiefungen VI befinden sich an denjenigen Stellen des Substrats S, an welchen später metallisierte Durchkontaktierungslöcher elektrisch leitende Verbindungen zwischen Oberseite 0 und Unterseite U des Substrats S bilden sollen. Als Substratwerkstoff sind hochtemperaturbeständige Thermoplaste wie Polyetherimid oder Polye- thersulfon geeignet, wobei jedoch vorzugsweise (LCP (Liquid Crystalline Polymers) verwendet wird.FIG. 1 shows a section through a substrate S for a polymer stud grid array, the substrate S being provided on its underside U with a multiplicity of integrally molded "polymer studs" or polymer bumps PS. The polymer bumps PS, which are stepped on their underside, are also formed during the injection molding of the substrate S, as are the funnel-shaped depressions VI which are introduced into the upper side 0 of the substrate S. The funnel-shaped depressions VI are located at those points on the substrate S at which plated-through holes later are to form electrically conductive connections between the top 0 and bottom U of the substrate S. High-temperature resistant thermoplastics such as polyetherimide or polyethersulfone are suitable as substrate material, however (LCP (Liquid Crystalline Polymers) is preferably used.
Figur 2 zeigt die Einzelheit II der Figur 1 mit zwei in die Oberseite des Substrats S eingebrachten trichterförmigen Vertiefungen VI. Der Boden jeder trichterförmigen Vertiefung VI ist mit Bl bezeichnet.FIG. 2 shows the detail II of FIG. 1 with two funnel-shaped depressions VI made in the upper side of the substrate S. The bottom of each funnel-shaped depression VI is denoted by B1.
In das in Figur 2 dargestellte Spritzgießteil werden gemäß Figur 3 Durchgangslöcher DLl eingebracht, welche zusammen mit den Vertiefungen VI Durchkontaktierungslöcher bilden. Die in den Boden Bl (vgl. Figur 2) eingebrachten Durchgangslöcher DLl werden beispielsweise durch mechanisches Bohren oder durch Laserbohren erzeugt, wobei die Locherzeugung sowohl von der Oberseite 0 zur Unterseite U als auch von der Unterseite
cυ cυ f M P1 P1 According to FIG. 3, through holes DL1 are introduced into the injection molded part shown in FIG. 2, which, together with the depressions VI, form via holes. The through holes DL1 made in the bottom B1 (see FIG. 2) are produced, for example, by mechanical drilling or by laser drilling, the hole being produced both from the top 0 to the bottom U and from the bottom cυ cυ f MP 1 P 1
Cn o Cn o n o nCn o Cn o n o n
gießen trichterförmige Vertiefungen V2 in der Unterseite U des Substrats S erzeugt werden.pour funnel-shaped depressions V2 in the underside U of the substrate S.
In das gemäß Figur 6 ausgebildete Spritzgießteil werden dann gemäß Figur 7 Durchgangslöcher DL2 eingebracht, welche zusammen mit den Vertiefungen V2 Durchkontaktierungslöcher bilden. Die Herstellung der in den Boden B2 der Vertiefungen V2 eingebrachten Durchkontaktierungslöcher DL2 kann auch hier wieder durch mechanisches Bohren oder durch Laserbohren vorge- nommen werden.In the injection molded part designed according to FIG. 6, through holes DL2 are then introduced according to FIG. 7, which form via holes together with the depressions V2. The via holes DL2 made in the bottom B2 of the depressions V2 can also be produced here again by mechanical drilling or by laser drilling.
Figur 9 zeigt einen Schnitt durch eine dritte Ausführungsform eines Substrats S für ein Polymer Stud Grid Array. In den Boden B3 einer beim Spritzgießen des Substrats S mitgeformten Vertiefung V3 werden hier insgesamt vier Durchgangslöcher DL3 eingebracht, deren Verteilung innerhalb der Vertiefung V3 aus der in Figur 9 dargestellten Draufsicht ersichtlich ist. Figur 9 zeigt auch, dass die Vertiefung V3 hier eine quadratische Form aufweist.FIG. 9 shows a section through a third embodiment of a substrate S for a polymer stud grid array. A total of four through holes DL3 are made in the bottom B3 of a depression V3 formed during the injection molding of the substrate S, the distribution of which in the depression V3 can be seen from the top view shown in FIG. 9. FIG. 9 also shows that the depression V3 has a square shape here.
Figur 10 zeigt in stark vereinfachter schematischer Darstellung die Geometrie der Durchkontaktierungslöcher des in Figur 3 dargestellten Substrats S. Die kegelförmige Vertiefung VI weist auf der Oberseite 0 des Substrats S einen mit a be- zeichneten Durchmesser auf, während der Durchmesser im Bereich des Bodens Bl (vgl. Figur 2) mit b bezeichnet ist. Das in den Boden Bl der Vertiefung VI eingebrachte Durchgangsloch DLl weist einen mit d bezeichneten Durchmesser auf. Die Stärke des Substrats S ohne Berücksichtigung der Höhe der Poly- merhöcker PS ist mit s bezeichnet, während die Tiefen vonFIG. 10 shows the geometry of the through-holes of the substrate S shown in FIG. 3 in a highly simplified schematic representation. The conical depression VI has on the upper side 0 of the substrate S a diameter denoted by a, while the diameter in the region of the bottom B1 ( see FIG. 2) is denoted by b. The through hole DL1 made in the bottom B1 of the depression VI has a diameter denoted by d. The thickness of the substrate S without taking into account the height of the polymer bumps PS is denoted by s, while the depths of
Vertiefung VI und Durchgangsloch DLl mit t bzw. c bezeichnet sind.Well VI and through hole DLl are designated t and c, respectively.
Für ein typisches aus LCP bestehendes Substrat S mit laserge- bohrten Durchgangslöchern DLl können beispielsweise folgende Abmessungen angegeben werden:
a 0, 20 mm b 0 , 14 mm d 0, 10 mm s 0, 35 mm t 0 , 25 mm c 0, 10 mmFor a typical substrate S consisting of LCP with laser-drilled through holes DL1, the following dimensions can be specified, for example: a 0, 20 mm b 0, 14 mm d 0, 10 mm s 0, 35 mm t 0, 25 mm c 0, 10 mm
Die vorstehend beschriebenen Ausführungsbeispiele der Erfindung können in entsprechender Weise auch bei einer Herstel- lung der Substrate durch Heißprägen realisiert werden. Hierbei wird ein Rohkörper, vorzugsweise eine Folie, erwärmt, worauf die Polymerhöcker und die Vertiefungen in einem Arbeitsgang mittels eines Prägestempels erzeugt werden. Weitere Einzelheiten der Herstellung von Substraten für ein Polymer Stud Grid Array durch Heißprägen sind in der deutschen Patentanmeldung 100 37 292.9-33 beschrieben, deren Offenbarung Bestandteil der vorliegenden Patentanmeldung ist.
The exemplary embodiments of the invention described above can also be implemented in a corresponding manner in the manufacture of the substrates by hot stamping. Here, a raw body, preferably a film, is heated, whereupon the polymer bumps and the depressions are produced in one operation by means of an embossing stamp. Further details of the production of substrates for a polymer stud grid array by hot stamping are described in German patent application 100 37 292.9-33, the disclosure of which is part of the present patent application.
Claims
1. Polymer Stud Grid Array mit einem durch Spritzgießen oder durch Heißprägen herge- stellten Substrat (S) aus einem elektrisch isolierenden Polymer, auf der Unterseite (U) des Substrats (S) flächig angeordneten und beim Spritzgießen oder beim Heißprägen mitgeformten Polymerhöckern (PS) , - auf den Polymerhöckern (PS) gebildeten Außenanschlüssen (AA), auf der Unterseite des Substrats (S) ausgebildeten Leiterzügen (LZU) , welche sich zwischen den Außenanschlüssen (AA)und zur Oberseite des Substrats (S) führenden etal- lisierten Durchkontaktierungslöchern erstrecken, wobei die Durchkontaktierungslöcher durch beim Spritzgießen oder beim Heißprägen des Substrats (S) mitgeformte Vertiefungen (VI; V2; V3) und durch in den Boden (Bl; B2; B3) der Vertiefungen (VI; V2; V3) eingebrachte Durchgangslöcher (DLl; DL2; DL3) gebildet sind.1. Polymer Stud Grid Array with a substrate (S) made of an electrically insulating polymer produced by injection molding or by hot stamping, arranged flat on the underside (U) of the substrate (S) and molded during injection molding or hot stamping (PS) , - on the polymer bumps (PS) formed external connections (AA), on the underside of the substrate (S) formed conductive lines (LZU), which extend between the external connections (AA) and to the upper side of the substrate (S) leading through holes , wherein the via holes are formed by depressions (VI; V2; V3) formed during injection molding or hot stamping of the substrate (S) and through holes (DL1; DL1; DL2; DL3) are formed.
2. Polymer Stud Grid Array nach Anspruch 1, dadurch gekennzeichnet, dass die Vertiefungen (VI; V2; V3) trich- terförmig ausgebildet sind.2. Polymer stud grid array according to claim 1, characterized in that the depressions (VI; V2; V3) are funnel-shaped.
3. Polymer Stud Grid Array nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Vertiefungen (VI) in die Oberseite (0) des Substrats (S) eingebracht sind.3. Polymer stud grid array according to claim 1 or 2, characterized in that the depressions (VI) in the top (0) of the substrate (S) are introduced.
4. Polymer Stud Grid Array nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Vertiefungen (V2) in die Unterseite des Substrats (S) eingebracht sind.4. Polymer stud grid array according to claim 1 or 2, characterized in that the depressions (V2) are introduced into the underside of the substrate (S).
5. Polymer Stud Grid Array nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass in den Boden (B3) der Vertiefungen (V3) mindestens zwei Durchgangslöcher (DL3) eingebracht sind.5. Polymer Stud Grid Array according to one of the preceding claims, characterized in that in the ground (B3) of the depressions (V3) at least two through holes (DL3) are introduced.
6. Polymer Stud Grid Array nach einem der vorhergehenden An- sprüche, dadurch gekennzeichnet, dass die Tiefe (t) der Vertiefungen (VI) mindestens 50 % der Stärke (s) des Substrats (S) beträgt.6. Polymer Stud Grid Array according to one of the preceding claims, characterized in that the depth (t) of the depressions (VI) is at least 50% of the thickness (s) of the substrate (S).
7. Polymer Stud Grid Array nach einem der vorhergehenden An- sprüche, dadurch gekennzeichnet, dass die Tiefe (t) der Vertiefungen (VI) etwa 70 % bis 80 % der Stärke (s) des Substrats (S) beträgt.7. Polymer stud grid array according to one of the preceding claims, characterized in that the depth (t) of the depressions (VI) is approximately 70% to 80% of the thickness (s) of the substrate (S).
8. Verfahren zur Herstellung eines Substrats (S) für ein Po- lymer Stud Grid Array mit folgenden Schritten:8. A method for producing a substrate (S) for a polymer stud grid array comprising the following steps:
Spritzgießen oder Heißprägen des Substrats (S) mit auf der Unterseite (U) integral angeformten Polymerhöckern (PS) und mit Vertiefungen (VI; V2; V3) im Bereich späterer Durchkontaktierungslöcher, - Einbringen von Durchgangslöchern (DLl; DL2; DL3) in den Boden (Bl; B2; B3) der Vertiefungen (VI; V2; V3) .Injection molding or hot stamping of the substrate (S) with integrally molded polymer bumps (PS) on the underside (U) and with depressions (VI; V2; V3) in the area of later via holes, - Making through holes (DLl; DL2; DL3) in the ground (B1; B2; B3) of the depressions (VI; V2; V3).
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, dass die Vertiefungen (VI; V2; V3) trichterförmig aus- gebildet werden.9. The method according to claim 8, characterized in that the depressions (VI; V2; V3) are funnel-shaped.
10. Verfahren nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass die Vertiefungen (VI) in die Oberseite (O) des Substrats (S) eingebracht werden.10. The method according to claim 8 or 9, characterized in that the depressions (VI) in the top (O) of the substrate (S) are introduced.
11. Verfahren nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass die Vertiefungen (V2) in die Unterseite (U) des Substrats (S) eingebracht werden.11. The method according to claim 8 or 9, characterized in that the depressions (V2) are introduced into the underside (U) of the substrate (S).
12. Verfahren nach einem der Ansprüche 8 bis 11, dadurch gekennzeichnet, dass in den Boden (B3) der Vertiefungen (V3) mindestens zwei Durchgangslöcher (DL3) eingebracht werden.12. The method according to any one of claims 8 to 11, characterized in that in the bottom (B3) of the wells (V3) at least two through holes (DL3) are introduced.
13. Verfahren nach einem der Ansprüche 8 bis 12, dadurch gekennzeichnet, dass die Vertiefungen (VI) mit einer13. The method according to any one of claims 8 to 12, characterized in that the depressions (VI) with a
Tiefe (t) eingebracht werden, die mindestens 50 % der Stärke (s) des Substrats (S) beträgt.Depth (t) can be introduced, which is at least 50% of the thickness (s) of the substrate (S).
14. Verfahren nach einem der Ansprüche 8 bis 13, dadurch gekennzeichnet, dass die Vertiefungen (VI) mit einer14. The method according to any one of claims 8 to 13, characterized in that the depressions (VI) with a
Tiefe (t) eingebracht werden, die etwa 70 % bis 80 % der Stärke (s) des Substrats (S) beträgt.Depth (t) can be introduced, which is about 70% to 80% of the thickness (s) of the substrate (S).
15. Verfahren nach einem der Ansprüche 8 bis 14, dadurch gekennzeichnet, dass die Durchgangslöcher (DLl; DL2;15. The method according to any one of claims 8 to 14, characterized in that the through holes (DLl; DL2;
DL3) gebohrt werden.DL3) are drilled.
16. Verfahren nach einem der Ansprüche 8 bis 15, dadurch gekennzeichnet, dass die Durchgangslöcher (DLl; DL2; DL3) durch Laserbohren eingebracht werden. 16. The method according to any one of claims 8 to 15, characterized in that the through holes (DLl; DL2; DL3) are made by laser drilling.
Applications Claiming Priority (2)
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DE10019828 | 2000-04-20 | ||
DE10019828.7 | 2000-04-20 |
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WO2001082372A1 true WO2001082372A1 (en) | 2001-11-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/DE2001/000679 WO2001082372A1 (en) | 2000-04-20 | 2001-02-21 | Polymer stud grid array having feedthroughs and method for producing a substrate for a polymer stud grid array of this type |
Country Status (2)
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WO (1) | WO2001082372A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002089205A2 (en) * | 2001-04-25 | 2002-11-07 | Siemens Production And Logistics Systems Ag | Relay connector for an electronic component and a method for producing the same |
DE10202145A1 (en) * | 2002-01-21 | 2003-05-08 | Siemens Dematic Ag | Production of connecting substrates comprises laminating substrate film made from polymer with metal layer on one side, forming bumps and recesses on one side of the substrate foil, covering the surface with metal layer and structuring |
DE10207290A1 (en) * | 2002-02-21 | 2003-05-08 | Siemens Dematic Ag | Production of a connecting support with a flat substrate comprises providing the substrate with a conductor strip structure on both sides, forming inner connections in the assembly region for contacting a component and further processing |
DE10227305A1 (en) * | 2002-06-19 | 2003-09-04 | Siemens Dematic Ag | Electrical multiple layer component module used in polymer stud grid array technology comprises a second three-dimensional substrate arranged on first three-dimensional substrate with intermediate connections connected to contacts |
WO2003100854A2 (en) * | 2002-05-24 | 2003-12-04 | Siemens Aktiengesellschaft | Electronic component module and method for the production thereof |
DE10225685A1 (en) * | 2002-06-10 | 2003-12-24 | Siemens Dematic Ag | Forming holes in a flat polymer material circuit board substrate, involves initially forming blind holes, and then removing the material at the bottom using a laser |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002089205A2 (en) * | 2001-04-25 | 2002-11-07 | Siemens Production And Logistics Systems Ag | Relay connector for an electronic component and a method for producing the same |
DE10120257A1 (en) * | 2001-04-25 | 2002-11-14 | Siemens Production & Logistics | Connection carrier for an electronic component and method for its production |
WO2002089205A3 (en) * | 2001-04-25 | 2003-08-07 | Siemens Production & Logistics | Relay connector for an electronic component and a method for producing the same |
DE10202145A1 (en) * | 2002-01-21 | 2003-05-08 | Siemens Dematic Ag | Production of connecting substrates comprises laminating substrate film made from polymer with metal layer on one side, forming bumps and recesses on one side of the substrate foil, covering the surface with metal layer and structuring |
DE10207290A1 (en) * | 2002-02-21 | 2003-05-08 | Siemens Dematic Ag | Production of a connecting support with a flat substrate comprises providing the substrate with a conductor strip structure on both sides, forming inner connections in the assembly region for contacting a component and further processing |
WO2003100854A2 (en) * | 2002-05-24 | 2003-12-04 | Siemens Aktiengesellschaft | Electronic component module and method for the production thereof |
DE10223203A1 (en) * | 2002-05-24 | 2003-12-04 | Siemens Dematic Ag | Electronic component module and method for its production |
DE10223203B4 (en) * | 2002-05-24 | 2004-04-01 | Siemens Dematic Ag | Electronic component module and method for its production |
WO2003100854A3 (en) * | 2002-05-24 | 2005-01-06 | Siemens Ag | Electronic component module and method for the production thereof |
DE10225685A1 (en) * | 2002-06-10 | 2003-12-24 | Siemens Dematic Ag | Forming holes in a flat polymer material circuit board substrate, involves initially forming blind holes, and then removing the material at the bottom using a laser |
DE10227305A1 (en) * | 2002-06-19 | 2003-09-04 | Siemens Dematic Ag | Electrical multiple layer component module used in polymer stud grid array technology comprises a second three-dimensional substrate arranged on first three-dimensional substrate with intermediate connections connected to contacts |
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