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WO2000036037A1 - Compositions et procedes de polissage de plaquettes de semi-conducteurs - Google Patents

Compositions et procedes de polissage de plaquettes de semi-conducteurs Download PDF

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Publication number
WO2000036037A1
WO2000036037A1 PCT/US1999/030154 US9930154W WO0036037A1 WO 2000036037 A1 WO2000036037 A1 WO 2000036037A1 US 9930154 W US9930154 W US 9930154W WO 0036037 A1 WO0036037 A1 WO 0036037A1
Authority
WO
WIPO (PCT)
Prior art keywords
amino alcohol
abrasive particles
polishing
tris
amino
Prior art date
Application number
PCT/US1999/030154
Other languages
English (en)
Inventor
James Shen
Wesley D. Costas
Original Assignee
Rodel Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel Holdings, Inc. filed Critical Rodel Holdings, Inc.
Publication of WO2000036037A1 publication Critical patent/WO2000036037A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric

Definitions

  • the present invention relates to compositions which are useful as slurries used during the chemical mechanical polishing of substrates, especially those comprised of silica, silicates or silicon nitride.
  • CMP chemical-mechanical polishing
  • a slurry is used in conjunction with a polishing pad to facilitate the removal of an insulator or dielectric material.
  • this insulating or dielectric material is SiO 2
  • H 2 O hydration reaction
  • Dissolution of this network generally occurs above a pH of 9.0 because of the solubility of the reaction product at high pH.
  • a high pH is desirable to achieve a high removal rate.
  • Silicon Nitride while chemically dissimilar to SiO 2 , has shown generally similar polishing behavior.
  • formulations shown to be suitable for the polishing of SiO 2 are also effective for silicon nitride, albeit at lower rates.
  • bases such as KOH and N ⁇ UOH are used to yield a pH of 10-1 1 in commercial production of polishing slurries useful for CMP of insulating layers.
  • Yu et al. in USP 5,244,534 describe a CMP step for removing insulation material from around a metal plug.
  • an oxide insulation material such as SiO
  • etchants selective to the oxide
  • It is an object of this invention to provide dispersions of silicon dioxide which do not gel or settle out and, if there is sedimentation, that the sediment be easily redispersed.
  • a further object of this invention is to provide slurries useful for the chemical-mechanical polishing of insulation layers on semiconductor wafers which are stable and provide a high quality surface for the semiconductor wafers upon polishing.
  • Stable dispersions of submicron abrasive particles are provided by using an amino alcohol as a stabilizing component.
  • a composition suitable for polishing an insulating or barrier layer, comprising: water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component which interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
  • the composition provided is most useful when the pH of the composition is adjusted to between 9 and 12.
  • a polymer additive for a CMP slurry which provides a polished surface with less surface roughness and fewer scratches than when the slurry is used without such an additive is another aspect of this invention.
  • the additive is defined as an organic polymer having a degree of polymerization of at least five comprising a plurality of moieties having affinity to surface groups contained on insulating layer surfaces. These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl.
  • Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly- formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly-methacrylic acid.
  • This additive is disclosed in Patent Application Serial Number 09/329,225 which is made a part of this specification by reference. In the previous application, the additive was made a part of the CMP slurry to provide silica rate suppression.
  • the polymer additive in the present invention provides a polished surface with less surface roughness and fewer scratches.
  • a further aspect of the present invention is a process for polishing insulating layers in which the slurry, used in combination with a standard polishing machine and a polishing pad, is comprised of water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component that interacts with the surface being polished.
  • the composition provided is most useful when the pH of the composition is adjusted to between 9 and 12.
  • a further aspect of the present invention is a process for CMP of a semiconductor wafer in which the slurry, used in combination with a standard polishing machine and a polishing pad, comprises an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces.
  • hydroxides such as potassium hydroxide, ammonium hydroxide, and sodium hydroxide, and amines have been used as dispersing agents for CMP slurry abrasives. It has been found that a class of compounds known as amino alcohols provide excellent dispersion results both in the predispersed abrasive concentrates and in the CMP slurry compositions which are made from the predispersed abrasive concentrates.
  • the above amino alcohols may be obtained from ANGUS Chemical Company, Buffalo Grove, IL.
  • the above compounds are: AMP, 2-amino-2-methyl-l-propanol; DMAMP, 2-dimethylamino-2-methyl- 1 -propanol; and TRIS AMINO ® , tris(hydroxymethyl)aminomethane.
  • Amino alcohols are defined as organic compounds which contain at least one amino group and one hydroxyl group.
  • amino alcohols may be used at 0.01% to 10% by weight in the aqueous dispersions of submicron abrasive particles according to this invention.
  • Submicron abrasive particles which might be stabilized with the amino alcohols include, but are not limited to, silica, ceria, alumina, titania, and silica gel.
  • the submicron abrasive particles should have a primary particle size in the range of 5 nanometers to 100 nanometers. Primary particle size can be determined by TEM imaging where the smallest particles are measured even if shown as part of an agglomeration.
  • the stabilized abrasive particles of this invention must have along with them a chemically interactive component that interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
  • a chemically interactive component that interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
  • Table 2 illustrates this fact, plus the fact that the addition of a small amount of a compound may provide a polished surface with less surface roughness and fewer scratches than when the slurry is used without such a compound.
  • This compound is defined as an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces.
  • These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl.
  • Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly-formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly- methacrylic acid.
  • PVP poly-vinylpyrrolidone
  • Example 2 the polishing tests on TEOS wafers shown in Table 2 were carried out on a Strasbaugh 6DS-SP polisher under the following conditions: Time, 120 sec; Down force, 7 psi; Back pressure, 0.5 psi; Platen speed, 51 rpm; Carrier speed, 41 rpm; Temperature, ambient; Slurry flow, 125 ml/min; Slurry dilution ratio, 1 :1 with DI water; Pad type, conventional urethane pad. Table 2
  • A-70 fumed silica powder with a surface area of 70 - 100 m /g
  • PVP poly-vinylpyrrolidone
  • A-130 fumed silica powder with a surface area of 120 - 140 m /g
  • the table also shows the improvement in surface roughness which occurs upon addition of an organic polymer (PVP) to a CMP slurry.
  • the surface measurements were obtained using an Atomic Force Microscope (AFM) available from Digital Instruments, Inc. Using the tapping mode, a silicon tip, and a measurement area of 10 microns by 10 microns, the root mean square (RMS) roughness and the peak to valley (P-V) roughness were determined. Surface condition can be observed from the images provided by the AFM.
  • Figures 1 to 4 show AFM images of the wafer surfaces after polishing with slurries G, H, L, and M. These images dramatically show the improvement in surface condition when using an organic polymer in the slurries. Such a polymer would typically be used in concentrations of 0.01% to 5% in the slurries of this invention.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne des dispersions stables de particules abrasives submicroniques utilisant un alcool aminé comme agent de stabilisation. La composition de l'invention, qui convient au polissage d'une couche barrière ou isolante, comprend de l'eau, une dispersion aqueuse de particules abrasives submicroniques pour laquelle on utilise comme agent de stabilisation un alcool aminé, et un composant chimiquement inerte qui interagit avec la surface à polir. L'invention concerne aussi un additif destiné aux suspensions de polissage mécanico-chimique (CMP) qui est un polymère organique présentant un degré de polymérisation d'au moins cinq, ce polymère possédant une pluralité d'entités qui présentent une affinité avec des groupes de surfaces de la surface à polir.
PCT/US1999/030154 1998-12-17 1999-12-17 Compositions et procedes de polissage de plaquettes de semi-conducteurs WO2000036037A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11260198P 1998-12-17 1998-12-17
US60/112,601 1998-12-17

Publications (1)

Publication Number Publication Date
WO2000036037A1 true WO2000036037A1 (fr) 2000-06-22

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PCT/US1999/030154 WO2000036037A1 (fr) 1998-12-17 1999-12-17 Compositions et procedes de polissage de plaquettes de semi-conducteurs

Country Status (1)

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WO (1) WO2000036037A1 (fr)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002061008A2 (fr) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Systeme de polissage contenant un metal alcalin et procede associe
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US6743737B2 (en) 1998-11-04 2004-06-01 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US6916742B2 (en) 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7022608B2 (en) 2000-12-01 2006-04-04 Applied Materials Inc. Method and composition for the removal of residual materials during substrate planarization
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US7199056B2 (en) 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US7504018B2 (en) 2005-10-31 2009-03-17 Applied Materials, Inc. Electrochemical method for Ecmp polishing pad conditioning

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU516728A1 (ru) * 1973-06-08 1976-06-05 Харьковский Ордена Ленина Политехнический Институт Им. В.И.Ленина Паста дл притирки и доводки деталей
SU608823A1 (ru) * 1976-10-11 1978-05-30 Предприятие П/Я Р-6324 Состав дл доводки полированных металлических поверхностей
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4284533A (en) * 1977-11-28 1981-08-18 Kao Soap Co., Ltd. Liquid abrasive-containing cleanser composition
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4752628A (en) * 1987-05-15 1988-06-21 Nalco Chemical Company Concentrated lapping slurries
US4867757A (en) * 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
US4892612A (en) * 1988-10-11 1990-01-09 Huff John E Polishing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU516728A1 (ru) * 1973-06-08 1976-06-05 Харьковский Ордена Ленина Политехнический Институт Им. В.И.Ленина Паста дл притирки и доводки деталей
SU608823A1 (ru) * 1976-10-11 1978-05-30 Предприятие П/Я Р-6324 Состав дл доводки полированных металлических поверхностей
US4284533A (en) * 1977-11-28 1981-08-18 Kao Soap Co., Ltd. Liquid abrasive-containing cleanser composition
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4752628A (en) * 1987-05-15 1988-06-21 Nalco Chemical Company Concentrated lapping slurries
US4867757A (en) * 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
US4892612A (en) * 1988-10-11 1990-01-09 Huff John E Polishing method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Derwent World Patents Index; AN 1978-24860A, ANRYUSHCH ET AL.: "Metal polishing paste-comprises an amino alcohol, soap, glycol and abrasive" *
DATABASE WPI Derwent World Patents Index; AN 1979-29172B, BAGDASAROV ET AL.: "Aqueous polishing composition for metallic, e.g. copper, mirrors-contains diamond powder and also ammonia and hydroxyalkylated aminoalcohol, used for optical instruments" *

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743737B2 (en) 1998-11-04 2004-06-01 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US7104267B2 (en) 1999-11-29 2006-09-12 Applied Materials Inc. Planarized copper cleaning for reduced defects
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US7022608B2 (en) 2000-12-01 2006-04-04 Applied Materials Inc. Method and composition for the removal of residual materials during substrate planarization
WO2002061008A2 (fr) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Systeme de polissage contenant un metal alcalin et procede associe
WO2002061008A3 (fr) * 2001-01-16 2002-09-19 Cabot Microelectronics Corp Systeme de polissage contenant un metal alcalin et procede associe
US6612911B2 (en) 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US7199056B2 (en) 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US6916742B2 (en) 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
US7504018B2 (en) 2005-10-31 2009-03-17 Applied Materials, Inc. Electrochemical method for Ecmp polishing pad conditioning

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