WO2000023635A1 - Liquid compounds for formation of materials containing alkaline earth metals - Google Patents
Liquid compounds for formation of materials containing alkaline earth metals Download PDFInfo
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- WO2000023635A1 WO2000023635A1 PCT/US1999/024533 US9924533W WO0023635A1 WO 2000023635 A1 WO2000023635 A1 WO 2000023635A1 US 9924533 W US9924533 W US 9924533W WO 0023635 A1 WO0023635 A1 WO 0023635A1
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- 0 *C*CCN(C*)CC*C* Chemical compound *C*CCN(C*)CC*C* 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
Definitions
- This invention relates to novel volatile liquid reagents which can replace less satisfactory solid sources in film deposition processes such as chemical vapor deposition (CVD), spray coating, spin coating or sol-gel deposition.
- These liquid reagents can be used for deposition of materials containing alkaline earth metals, such as metal oxides or mixed metal oxides.
- Chemical vapor deposition is a widely-used process for forming solid materials, such as coatings or powders, from reactants in the vapor phase.
- a reactant vapor may be created by heating a liquid to a sufficiently high temperature and bubbling a flow of a carrier gas through the liquid, to transport the vapor into the CVD chamber.
- the carrier gas may be omitted, and the vapor may flow directly from the bubbler into the low- pressure CVD chamber.
- Solids can be used as sources of vapor in CVD processes.
- the rate of vapor production by sublimation of a solid is not easily reproducible, because the amount of vapor produced often depends on the particle size and shape, which change as the sublimation process continues.
- the vapor concentration can change in an uncontrolled way, thereby changing the growth rate and/or the composition of materials made by the CVD process.
- different batches of solid may have different sizes and shapes of particles, so that the results of a CVD process may change when a new batch of solid precursor is placed in the system.
- Ba(thd)- 2 barium 2,2,6,6-tetramethyl-3,5-heptanedionate, often abbreviated as Ba(thd)- 2 , has been used to deposit barium strontium titanate (BST) films.
- Solid Ba(thd) 2 exists in a number of oligomeric forms, ranging from trimers to tetramers to polymers of various lengths, depending on the method used for its synthesis. The rates of interconversion between oligomeric forms are slow, often taking weeks or months. Thus the molecular composition of a sample of Ba(thd) 2 depends on how it was made and how long it has been stored.
- Thermal decomposition of solids is another problem that often affects the reproducibility of solid vapor sources.
- the solid beta-diketonates of barium, such as Ba(thd) 2 gradually decompose at their vaporization temperatures, so that the amount of vapor generated decreases with time.
- Thermal decomposition is also a potential problem for liquid sources, but its effect may be minimized for liquids by rapid or "flash" vaporization. This can be accomplished by pumping the liquid at a steady, controlled rate into a hot region in which the liquid vaporizes quickly. In such a "direct liquid injection” (DLI) system, each part of the liquid is heated for only a short time, and its vapor can be formed without significant decomposition even from thermally sensitive liquids.
- DPI direct liquid injection
- DLI digital low-density liquid-organic chemical vapor deposition
- Solid sources can be used in DLI vapor sources if a suitable liquid solvent can be found to dissolve the solid.
- solvents can introduce other difficulties, such as increased flammability, toxicity or corrosiveness of the precursor solution, increased incorporation of carbon or other impurities into the deposited film, and an increased volume of gaseous byproducts which must be removed from the exhaust gases to avoid pollution.
- These difficulties with a solvent can be minimized if the solid is highly soluble in the solvent, so that only a small amount of solvent is needed to form the liquid solution.
- the vapor pressures of beta-diketonates of alkaline earth metals may be increased by vaporizing them in the presence of amines (Gordon et al., U.S. Patent 5,139,999, 1992), ethers (Miller et al., U.S. Patent 4,501,602, 1985; Timmer et al., U.S. Patent 5,248,787, 1993; Kirlin et al., U.S. Patent 5,280,012, 1994) or thioethers (Kirlin et al., U.S. Patent 5,225,561, 1993).
- Liquid precursors for many metals have been successfully formed by using a mixture of several beta-diketonate ligands (Gordon et al, Materials Research Society Symposium, Vol. 495, pages 63-67, 1998).
- these liquid precursors are mixtures of many compounds, they are harder to purify and characterize than single compounds. For example, they cannot be purified by crystallization because on cooling they form a single glassy solid, rather than separating into pure single crystals.
- impurities can be removed by distillation, high purity cannot be obtained by distillation in a narrow temperature range. Because different components of the mixture have different vapor pressures, the mixture distills over a range of temperatures.
- Another difficulty with the use of these liquid mixtures is that a constant vapor composition of such mixtures cannot be continuously delivered from a bubbler source, since the more volatile components will distill out first.
- a principal feature of the present invention to provide chemical precursors that are pure liquid compounds at room temperature, and that may be used for the deposition of materials containing alkaline earth metals, particularly barium, strontium, calcium and magnesium.
- An additional feature of the present invention is to provide chemical precursors that are easily vaporized without decomposition, and that do not leave a nonvolatile residue during a process for the deposition of alkaline earth metal-containing materials.
- a related feature of the present invention is a process for deposition of alkaline earth metal-containing materials from chemical compounds that are liquids at room temperature. Another related feature is to deposit materials containing several metals by a chemical vapor deposition process in which all the reactants may be mixed homogeneously before delivery to the heated surface of the substrate.
- An additional feature of the present invention is a process for the deposition of alkaline earth metal-containing materials from chemical precursors that are easily vaporized without decomposition, and that do not leave a nonvolatile residue.
- Another feature of the present invention is to provide a process for making mixed metal oxides, including alkaline earth metal oxides, having high purity.
- a further feature of the invention is to provide liquid mixtures or solutions suitable for spray coating, spin coating or sol-gel deposition.
- Another feature of the present invention is to provide a liquid precursor for use in forming titanium dioxide and other titanium-containing materials.
- compositions comprising an alkaline earth metal beta-diketonate having one or more particular amine ligands bound to the metal.
- the compound is a liquid at 60 °C, and preferably at 20 °C, and is capable of being vaporized.
- the alkaline earth metal beta-diketonate has the general formula,
- R and R 2 may be an alkyl group, a fluoroalkyl group or an alkyl group containing oxygen- or nitrogen-containing species (for example, an amino, alcohol or alkoxyl species).
- R 3 may be hydrogen or an alkyl group, a fluoroalkyl group or an alkyl group containing oxygen- or nitrogen-containing species.
- the alkyl groups contain less than ten carbons and preferably less than seven carbons.
- compositions of the alkaline earth metal diketonates includes ligands derived from 2,2,6,6-tetramethyl-3,5-heptanedione, abbreviated as Hthd, 2,2,6,6-tetramethyl-3,5-octanedione, abbreviated as Htod, 3,3,7,7-tetramethyl-4,6- nonanedione, abbreviated as Htnd, and 2,2,6-trimethylheptane-3,5-dione, abbreviated as H3hd, where the H indicates the presence of a hydrogen atom that is removed when the ligand is bound to an alkaline earth metal.
- Preferred amines have the general formula:
- n is a non-negative integer
- preferred amines include N-substituted amines having the general formula:
- Substituted alkyl groups include those substituents which have a minimal effect on volatility or melting point of the product alkaline earth metal beta-diketonate compound, and include, but are not limited to, fluoroalkyl groups, or an alkyl group containing an oxygen-containing species.
- R a , R b , R c , R d and R e are selected to provide a volatile complex with an alkaline earth metal beta-diketonate.
- One or more of the groups R a , R b , R c , R d and R e desirably is larger than a methyl group and the total number of carbon atoms on the amine is desirably in the range of 4 to 20.
- N-alkyl substituted polyamines with alkyl chain lengths from about 4 to 8 carbon atoms promote the formation of liquid adducts.
- the liquid viscosity decreases with increasing numbers of carbon atoms in the alkyl chains.
- the amine ligand is a triamine, such as N,N',N"-trihexyldiethylenetriamine.
- An amine adduct of an alkaline earth metal beta-diketonate is formed by reacting the alkaline earth metal beta-diketonate with an amine.
- an amine In the case of a triamine, generally one equivalent of the triamine is used for one equivalent of an alkaline earth metal beta-diketonate.
- Two equivalents of a diamine may be reacted with one equivalent of a barium, strontium or calcium beta-diketonate, but only one diamine typically binds to a magnesium beta-diketonate.
- the amine adduct of a metal beta- diketonate is a liquid at room temperature. It was discovered that N-alkyl substituted polyamines with alkyl chain lengths from about 4 to 8 carbon atoms promote the formation of liquid adducts. The liquid viscosity decreases with increasing numbers of carbon atoms in the alkyl chains.
- the complexed alkaline earth metal beta-diketonate is a solid that is highly soluble in organic solvents.
- the metal beta- diketonate compound may preferably be prepared in concentrations of greater than 0.1 M, more preferably greater than 0.5 M and most preferably greater than 1.0 M.
- amine ligands with only two types of substituents may be sufficient to achieve the properties cited above. In other cases, three or four or even more different substituents on the amine ligands may be desired.
- Another aspect of the invention provides a process for the chemical vapor deposition of materials comprising alkaline earth metals, using vapors from an amine- complexed alkaline earth metal beta-diketonate and, optionally, another oxygen- containing gas.
- the process may be used to form films, including, but not limited to, barium, strontium, calcium and magnesium.
- a preferred embodiment uses a homogeneous vapor mixture comprising an amine-complexed alkaline earth metal beta-diketonate, oxygen and, optionally, an inert carrier gas such as nitrogen. This vapor mixture is brought into contact with a substrate heated to a temperature sufficient to deposit a material comprising one or more alkaline earth metals.
- Typical deposition temperatures lie in the range of about 200 to 800 °C.
- Typical deposition pressures range from normal atmospheric pressure down to a few milli-Torr.
- a preferred embodiment uses a homogenous liquid mixture of one or more amine-complexed metal beta-diketonates along with one or more other volatile metal- containing compounds.
- This liquid mixture is vaporized to form a vapor mixture and optionally mixed with an oxygen-containing gas, such as air, and an inert carrier gas such as nitrogen.
- This vapor mixture is heated to a temperature sufficient to cause reaction and the formation of a material comprising two or more metal oxides.
- reaction may be caused by light, or by the electrical energy of a plasma discharge.
- multimetal oxides are formed from solutions of one or more amine-complexed metal beta-diketonates along with one or more other volatile metal-containing compounds and a solvent, in deposition processes as described herein.
- the process may be used to form multimetal oxide films, including, but not limited to, barium ferrites, barium titanate, strontium bismuth tantalate and barium strontium titanate.
- liquid amine-complexed metal beta-diketonates may also be used, neat or as highly concentrated solutions, in film deposition methods such as sol-gel formation, spray-coating or spin-coating.
- Aryl-containing amines and/or higher carbon- containing amines are well-suited for such applications, as the higher carbon-content of the alkyl or aryl groups may result in a compound having lower volatility than comparable compounds having alkyl-containing amines.
- Table 1 gives the names of some beta-diketone ligands that are suitable for the practice of the invention. Table 1 also gives the numbers assigned by Chemical Abstracts to the compounds.
- R 3 may be hydrogen or an alkyl group, a fluoroalkyl group or an alkyl group containing oxygen- or nitrogen-containing species.
- the alkyl groups contain less than ten carbons and preferably less than seven carbons. Table 1.
- the number t in this table is the number of torsion angles corresponding to rotation around C-C single bonds. Rotation angles of methyl or tert-butyl groups about their three-fold axes were not counted, since these motions don't change the intermolecular interactions as much as the other torsions do. As t increases, the number configurations available to the ligand increases, and thus its ability to frustrate crystallization of its compounds. Thus the larger t is, the greater is the ability of the ligand to keep its compounds in liquid form.
- oxygens in the beta-diketonate ligands may be replaced by isoelectronic species, such as sulfur or NH or NR, where R is a hydrocarbon radical.
- beta-diketonate ligands shall be considered as beta-diketonate ligands.
- Some or all of the hydrogens in the beta-diketonate ligands may be replaced by fluorine. Fluorine substitution may be used to deposit fluorides instead of oxides.
- Fluorine substitution may also provide higher vapor pressures of the precursor compounds.
- Beta-Diketonate Ligands The required beta-diketone ligands may be prepared by known methods, such as the Claisen condensation of a methyl ketone and an ethyl ester, in the presence of a strong base, such as sodium hydride.
- a preferred way to synthesize these beta -diketone ligands is first to react an appropriate ketone with a strong base, such as sodium hydride, in the presence of a donor solvent, such as tetrahydrofuran (THF), to form a solution of the corresponding sodium enolate:
- a strong base such as sodium hydride
- a donor solvent such as tetrahydrofuran (THF)
- This enolate is then reacted with an appropriate organic acid chloride, neutralized with a mineral acid and filtered to remove the salt precipitate, to form the desired beta-
- the mixture contained 0.25 eq. NaCl, 0.25 eq. pinacolone, 0.25 eq. Na( ⁇ -diketonate) and 0.05 eq. Na(enolate). Then 34 mL of concentrated aqueous HCI was added to give a fluffy, white solid precipitate of NaCl in a clear, colorless solution. MgS0 4 was added in an amount sufficient to absorb the water, the mixture was stirred for 30 min and then filtered. The solid was washed with 100 mL of hexanes, and the washings combined with the filtrate.
- tert-amyl ethyl ketone (4,4-dimethyl-3- hexanone) was made as follows: 21.3 ml 2,2-dimethylbutyryl chloride was mixed with 40 ml of dry and degassed dichloromethane, CH 2 C1 2 , and the solution cooled to - 30 °C. 19.18 g of diethylaluminum chloride, (CH 3 CH 2 ) 2 A1C1, dissolved in 40 ml of CH 2 C1 2 , was added at about 1 drop per second while maintaining the temperature of the reaction mixture between -35 and -30 °C. The first few drops caused some smoke, but later the smoke disappeared.
- the liquid solution was warmed to 25 °C over a period of 1 hour, and stirred at 25 °C for an additional hour. Then the solution was slowly transferred by cannula to a rapidly-stirred mixture of 25 ml sulfuric acid, H 2 S0 4 , 25 ml of water and 250 g of ice. A white precipitate formed, along with some bubbling, and then the precipitate gradually dissolved. The organic layer was removed, and the aqueous layer was washed with dichloromethane, and the combined organic layer and washings were dried over magnesium sulfate, MgS0 4 . The mixture was filtered and the solvent removed from the filtrate under reduced pressure, leaving 11.33g (57%) of a very pale yellow liquid. NMR confirmed that the product was 4,4-dimethyl-3-hexanone.
- Tert-amyl methyl ketone can be synthesized by methylating 2,2-dimethylbutyryl chloride with methylaluminum sesquichloride, Me 3 Al 2 Cl 3 , using a similar procedure to the one just described for 4,4- dimethyl-3-hexanone. 3. Synthesis of Alkaline Earth Beta-Diketonates
- Beta-diketonate ligands can be bound to metal ions in oxidation state +2, including beryllium, magnesium, calcium, strontium and barium. Many different reactions can be used to bind beta-diketonate ligands to metals. Specific examples of preparative procedures are given in Inorganic Syntheses, for beryllium in Vol. 2, pp. 17-20 (1946); and for calcium, strontium and barium in Vol. 31, pp. 1-7 (1997). In particular, the alkaline earth metal may be reacted with the beta-diketone ligand to form a metal beta- diketonate compound:
- amines may be used in the practice of this invention. Polyamines with 2, 3 or 4 nitrogens are preferred, while triamines (3 nitrogens) are most preferred. Some specific preferred amines are listed in Table 2, which also gives the number assigned by Chemical Abstracts Service to those amines previously reported.
- the number t in Table 2 is the number of angular variables (torsion angles corresponding to rotation around C-C single bonds). Angles that rotate methyl or tert- butyl groups about their three-fold axes were not counted, since these motions don't change the intermolecular interactions as much as the other torsion angles do.) As t increases, the number configurations available to the amine increases, and thus its ability to frustrate crystallization of amine adducts. Thus the larger t is, the greater is the ability of the amine to keep the adduct compound in liquid form and to lower the viscosity and the melting point.
- amines required in the practice of this invention can be synthesized by a number of methods. For the embodiments which use a polyamine in which all nitrogens are saturated with the same alkyl groups, it is convenient to use reductive alkylation with an aldehyde as the alkyl source and sodium cyanoborohydride as the reductant. For example, to fully alkylate a triamine, the general reaction may be written as follows:
- the R groups in this formula are methyl groups.
- the pendant groups on the nitrogens are ethyl groups, and this amine is called N,N,N',N",N"-pentaethyldiethylenetriamine, nicknamed pedeta.
- This material may be prepared by reacting diethylenetriamine, H 2 NCH 2 CH 2 NHCH 2 CH 2 NH 2 , with acetaldehyde, CH 3 CHO, and sodium cyanoborohydride, NaBH 3 CN, in acetonitrile solution, following the procedure published for a similar reaction (R. F. Borch and A. I. Hassid, Journal of Organic Chemistry, volume 37, pages 1673-1674, 1972).
- a particularly desirable form of this embodiment combines a small group, such as hydrogen or a methyl group, on each terminal nitrogen with a second larger group, such as butyl, amyl (pentyl), or hexyl.
- the presence of the smaller group also minimizes the steric bulk of the ligand, and allows firm binding to the metal center.
- the synthesis of this type of poly amine can be carried out as follows. The commercially available unsubstituted poly amine is first acylated with an acid anhydride under conditions in which only one acyl group can attach to each nitrogen. Then the resulting polyamide is reduced with lithium aluminum hydride:
- Dialkylethylenediamines were prepared by the following reaction:
- novel amine-complexed metal beta-diketonates of this invention may be formed simply by reacting a suitable amine with an alkaline earth metal beta- diketonate (M( ⁇ -dk) 2 ).
- Beta-diketonates of the larger alkaline earth metals, barium and strontium may accomodate amines with up to four nitrogens coordinated to the metal, while smaller calcium usually binds no more than three nitrogens, and magnesium usually no more than two nitrogens.
- the novel amine-complexed metal beta-diketonates of this invention are generally liquids at room temperature.
- the vapor of these liquids may be formed in a thin-film evaporator, or by nebulization into a carrier gas preheated to about 250 °C.
- the nebulization may be carried out pneumatically or ultrasonically.
- the amine- complexed alkaline earth liquid metal beta-diketonates are generally completely miscible with organic solvents, including hydrocarbons, such as dodecane, tetradecane, xylene and mesitylene, and with alcohols, ethers, esters, ketones and chlorinated hydrocarbons.
- Thin-film evaporators are made by Artisan Industries (Waltham, Massachusetts). Commercial equipment for direct vaporization of liquids (DLI) is made by MKS Instruments (Andover, Massachusetts), Advanced Technology Materials, Inc.(Danbury, Connecticut), Novellus Systems, Inc. (San Jose, California) and COVA Technologies (Tiburton, California). Ultrasonic nebulizers are made by Sonotek Corporation (Milton, New York) and Cetac Technologies (Omaha, California).
- the process of the invention can be carried out in standard equipment well known in the art of chemical vapor deposition (CVD).
- the CVD apparatus brings the vapors of the reactants into contact with a heated substrate on which the material deposits.
- a CVD process can operate at a variety of pressures, including in particular normal atmospheric pressure, and also lower pressures.
- Commercial atmospheric pressure CVD furnaces are made in the USA by the Watkins- Johnson Company (Scotts Valley, California), BTU International (North Billerica, Massachusetts) and SierraTherm (Watsonville, California).
- Commercial atmospheric pressure CVD equipment for coating glass on the float production line is made in the USA by
- Pilkington-Libbey-Owens-Ford Company Toledo, Ohio
- PPG Industries Pantsburgh, Pennsylvania
- AFG Industries Kingsport, Tennessee
- Low-pressure CVD equipment is made by Applied Materials (Santa Clara, California), Spire Corporation (Bedford, Massachusetts), Materials Research Corporation (Gilbert, Arizona), Novellus Systems, Inc. (San Jose, California), Emcore Corporation (Somerset, NJ) and NZ Applied Technologies (Woburn, Massachusetts).
- liquids and solutions described herein may also be used as metal- containing precursors for other types of deposition processes, such as spray coating, spin coating or sol-gel formation of mixed metal oxides.
- spray coating spin coating
- sol-gel formation of mixed metal oxides The high solubility and miscibility of these precursors is an advantage in forming the required solutions.
- a liquid compound was prepared by reacting equal molar amounts of Ba(thd) 2 and N,N',N"-trihexyldiethylenetriamine (thdeta) in hexane until all the solid dissolved, and then removing the hexane by warming the solution under reduced pressure. A viscous light yellow liquid remained. The compound is monomeric by cryoscopy. The viscosity of this liquid compound can be reduced, for easier handling and vaporization, by dissolving it in a high-boiling solvent, such as additional N,N',N"-trihexyldiethylenetriamine (thdeta) or a hydrocarbon such as mesitylene. Ultrasonic nebulization of such a solution and passage through a tube furnace at 250 °C resulted in complete evaporation of the fog droplets, demonstrating its utility as a vapor source.
- a high-boiling solvent such as additional N,N',N"-trihexyldiethylene
- the viscosities decrease with increasing numbers (listed in the #var column of Table 5) of C-C single bonds that rotate alkyl groups with less symmetry than a methyl or a tert-butyl group.
- the lowest viscosities are found for compounds with 12 or more angular variables.
- Mg(thd) 2 In a 100-mL round bottom, Mg(OEt) 2 was suspended in dimethoxyethane (DME) and a DME solution of 2,2,6,6-tetramethylheptane-3,5-dione (Hthd) was added by cannula. The solution was refluxed at 90°C overnight. The resulting cloudy solution was reduced to a solid in vacuo and taken up in 50 mL of tetrahydrofuran (thf). A small amount of solid was filtered off and the volatiles were again removed leaving 5.6 g of white Mg(thd) 2 (82% yield).
- DME dimethoxyethane
- Hthd 2,2,6,6-tetramethylheptane-3,5-dione
- Ba(thd) 2 *thdeta from Example 1 was nebulized through a Sonotek ultrasonic nozzle projecting into a stream of nitrogen gas preheated to 250 °C and 80 Torr pressure.
- the fog droplets evaporated, forming a transparent vapor mixture.
- the vapor mixture was passed into a tube furnace at 450 °C.
- a film on barium carbonate, BaC0 3 deposited on the inner walls of the tube furnace and on silicon substrates placed within the heated zone of the furnace.
- Titanium bis(n-butoxide) bis(tod) was formed by reaction of titanium n-butoxide with a Htod. 5.78 g (0.017 mol) of titanium n-butoxide was placed in a glass reaction flask and 15 ml hexanes were added. 6.74 g (0.034 mol) of Htod was added and stirred for 10 min, and the hexane solvent was removed in vacuum. The reaction mixture was heated to 80 °C under vacuum until no more bubbling occurred, in order to remove the byproduct n-butanol. 9.65 g (97%) of a clear, pale yellow liquid titanium bis(n-butoxide) bis(tod) product was recovered.
- EXAMPLE 34 The precursors for barium from Example 1, strontium from Example 18 and titanium from Example 33 were mixed in the molar ratio 7:3: 10 and used in a CVD experiment similar to Example 33, with a substrate temperature 500 °C. The resulting barium strontium titanate film contained some carbon contamination, which was removed by annealing for 10 minutes at 600 °C in flowing oxygen gas. EXAMPLES 35-39
- liquid barium compounds were prepared. These examples have even lower viscosities than the other barium compounds listed in Tables 3 and 4.
- the viscosities of the bariumcompounds based on the 2,2,6-trimethylheptane-3,5- dione (H3hd) ligand are particularly low, making these liquids easy to handle.
- Table 8 Additional Examples of Liquid Barium Compounds
- liquid precursors of the present invention may be combined with bismuth and tantalum precursors to provide a process for depositing strontium bismuth tantalate films having ferroelectric properties.
- bismuth and tantalum precursors may be combined with an iron-containg precursor with the precursors of this invention.
- barium ferrites having magnetic properties may be formed.
- liquids and solutions disclosed in these examples all appeared to be non- pyrophoric by the methods published by the United States Department of Transportation.
- One test calls for placing about 5 milliliters of the liquid or solution on an non-flammable porous solid, and observing that no spontaneous combustion occurs.
- Another test involves dropping 0.5 milliliters of the liquid or solution on a Whatman No. 3 filter paper, and observing that no flame or charring of the paper occurs.
- the precursors generally react slowly with the moisture in ambient air, and should be stored under a dry atmosphere such as nitrogen.
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JP (1) | JP2002527528A (en) |
KR (1) | KR20010080276A (en) |
WO (1) | WO2000023635A1 (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492561B2 (en) * | 2001-02-01 | 2002-12-10 | Chemetall Gmbh | Alkaline earth metal alkylene diamides, method for their production, and their use |
WO2004106583A1 (en) * | 2003-05-30 | 2004-12-09 | Saes Getters S.P.A. | Precursor solution used for the cvd method and use thereof in the production of thin films |
CN102153568A (en) * | 2011-02-10 | 2011-08-17 | 中国科学院电工研究所 | Preparation method of composite ligand barium precursor salt |
CN102180894A (en) * | 2011-03-15 | 2011-09-14 | 中国科学院电工研究所 | Preparation method of anhydrous (Ba (tmhd)2) |
US8101237B2 (en) | 2008-05-29 | 2012-01-24 | L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
CN102503962A (en) * | 2011-10-11 | 2012-06-20 | 中国科学院电工研究所 | Preparation method of composite ligand barium precursor salt |
US8236381B2 (en) | 2008-08-08 | 2012-08-07 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal piperidinate and metal pyridinate precursors for thin film deposition |
US8454928B2 (en) | 2007-09-17 | 2013-06-04 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Tellurium precursors for GST deposition |
US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US8691668B2 (en) | 2009-09-02 | 2014-04-08 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Dihalide germanium(II) precursors for germanium-containing film depositions |
US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
US9206507B2 (en) | 2011-09-27 | 2015-12-08 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions |
US9240319B2 (en) | 2010-02-03 | 2016-01-19 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
CN110283063A (en) * | 2019-06-11 | 2019-09-27 | 中山华明泰科技股份有限公司 | A kind of preparation method and application of Acetylacetone lanthanum |
WO2020174030A1 (en) | 2019-02-28 | 2020-09-03 | Evonik Operations Gmbh | Amine composition useful for making stable polyurethane foam systems |
Families Citing this family (1)
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CN117362353A (en) * | 2018-09-20 | 2024-01-09 | 北京夏禾科技有限公司 | Organic luminescent material containing novel auxiliary ligand |
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US5225561A (en) * | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
US5248787A (en) * | 1989-06-14 | 1993-09-28 | Nederlandse Organisatie Voor Toegepast Natuurwetenschappelijk Onderzoek - Tno | Volatile organic barium, strontium and calcium compounds |
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- 1999-10-20 WO PCT/US1999/024533 patent/WO2000023635A1/en not_active Application Discontinuation
- 1999-10-20 JP JP2000577342A patent/JP2002527528A/en active Pending
- 1999-10-20 KR KR1020017004991A patent/KR20010080276A/en not_active Application Discontinuation
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US5225561A (en) * | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
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Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492561B2 (en) * | 2001-02-01 | 2002-12-10 | Chemetall Gmbh | Alkaline earth metal alkylene diamides, method for their production, and their use |
WO2004106583A1 (en) * | 2003-05-30 | 2004-12-09 | Saes Getters S.P.A. | Precursor solution used for the cvd method and use thereof in the production of thin films |
US8454928B2 (en) | 2007-09-17 | 2013-06-04 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Tellurium precursors for GST deposition |
US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
US8101237B2 (en) | 2008-05-29 | 2012-01-24 | L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US9109281B2 (en) | 2008-06-25 | 2015-08-18 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US8236381B2 (en) | 2008-08-08 | 2012-08-07 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal piperidinate and metal pyridinate precursors for thin film deposition |
US8691668B2 (en) | 2009-09-02 | 2014-04-08 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Dihalide germanium(II) precursors for germanium-containing film depositions |
US9240319B2 (en) | 2010-02-03 | 2016-01-19 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
CN102153568A (en) * | 2011-02-10 | 2011-08-17 | 中国科学院电工研究所 | Preparation method of composite ligand barium precursor salt |
CN102180894B (en) * | 2011-03-15 | 2014-06-04 | 中国科学院电工研究所 | Preparation method of anhydrous (Ba (tmhd)2) |
CN102180894A (en) * | 2011-03-15 | 2011-09-14 | 中国科学院电工研究所 | Preparation method of anhydrous (Ba (tmhd)2) |
US9206507B2 (en) | 2011-09-27 | 2015-12-08 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions |
CN102503962A (en) * | 2011-10-11 | 2012-06-20 | 中国科学院电工研究所 | Preparation method of composite ligand barium precursor salt |
WO2020174030A1 (en) | 2019-02-28 | 2020-09-03 | Evonik Operations Gmbh | Amine composition useful for making stable polyurethane foam systems |
CN113544115A (en) * | 2019-02-28 | 2021-10-22 | 赢创运营有限公司 | Amine compositions useful for preparing stable polyurethane foam systems |
EP3931177A1 (en) * | 2019-02-28 | 2022-01-05 | Evonik Operations GmbH | Amine composition useful for making stable polyurethane foam systems |
CN110283063A (en) * | 2019-06-11 | 2019-09-27 | 中山华明泰科技股份有限公司 | A kind of preparation method and application of Acetylacetone lanthanum |
CN110283063B (en) * | 2019-06-11 | 2020-06-16 | 中山华明泰科技股份有限公司 | Preparation method and application of lanthanum acetylacetonate |
Also Published As
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KR20010080276A (en) | 2001-08-22 |
JP2002527528A (en) | 2002-08-27 |
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