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WO2000003061A1 - Procede et appareil de formation de films d'alliage silicium/germanium amorphes et polycristallins - Google Patents

Procede et appareil de formation de films d'alliage silicium/germanium amorphes et polycristallins Download PDF

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Publication number
WO2000003061A1
WO2000003061A1 PCT/US1999/014773 US9914773W WO0003061A1 WO 2000003061 A1 WO2000003061 A1 WO 2000003061A1 US 9914773 W US9914773 W US 9914773W WO 0003061 A1 WO0003061 A1 WO 0003061A1
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WO
WIPO (PCT)
Prior art keywords
silicon
germanium
chamber
gas
film
Prior art date
Application number
PCT/US1999/014773
Other languages
English (en)
Inventor
Shulin Wang
Johanes F. N. Swenberg
Cory M. Czarnik
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020017000352A priority Critical patent/KR20010053459A/ko
Priority to JP2000559275A priority patent/JP2002520487A/ja
Priority to EP99932079A priority patent/EP1100978A1/fr
Publication of WO2000003061A1 publication Critical patent/WO2000003061A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material

Definitions

  • the present invention relates to the field of thin film formation, and more particularly to a method and apparatus for depositing an amorphous or polycrystalline silicon germanium film at a reduced temperature and at a high deposition rate.
  • LPCVD low pressure chemical vapor deposition
  • reaction vessels are evacuated to relatively low pressures of between 100-1000 m torr.
  • the low pressures associated with LPCVD processes cause silicon films to be deposited at low rates (about 100 angstroms (A) /minute for undoped films and about 2 ⁇ A/minute for doped films).
  • the low deposition rates enable the films to be deposited with good step coverage.
  • step coverage decreases. A further reduction in the deposition rate is necessary for good step coverage.
  • LPCVD processes can form high quality films, their low deposition rates necessitate the processing of multiple wafers (i.e. up to 100) at one time in a batch type reaction vessel.
  • a problem with processing a plurality of wafers in a single machine at a single time is that it is difficult to obtain uniform thickness film and dopant concentration from wafer to wafer and from batch to batch. Nonuniformity in film thickness and doping profiles can drastically affect the electrical characteristics of the fabricated film and therefore, the performance and reliability of the fabricated device. Controlling film thickness and sheet resistance uniformity will be an even greater challenge for LPCVD batch systems when wafer size is increased to 300mm and above.
  • a single wafer CVD process for producing a silicon layer on a silicon wafer is described in U.S. Serial No. 07/742,954, filed August 9, 1991, entitled Low Temperature High Pressure Silicon Deposition Method and is assigned to the present assignee.
  • a pressure between 10-350 torr is achieved and maintained in a reaction chamber.
  • Hydrogen gas at about 10 liters /minutes is fed into the chamber along with less than 500 seem of silane (SiH4) (silane partial pressure is less than 4 torr) while the substrate is heated to a temperature of between 600-750 »C.
  • a problem with the above referenced single wafer CVD processes is that step coverage is poor and so cannot be used to fill high aspect ratio openings without causing the formation of voids. Voids can cause reliability problems and failures in the fabricated integrated circuits. Additionally, if dopants are included into the gas mix to form a low resistivity insitu doped silicon film, step coverage becomes even worse.
  • Another problem, with the above referenced process is that the growth rate is thermally activated with a relatively high activation energy of between 1.5 to 2.0eV.
  • the deposition temperature must be relatively high between 600-750 # C Industry trend, however, is for reduced temperature processing in order to reduce the thermal budget of the manufacturing process. Additionally, many processes utilize films and substrates such as glass substrates which are incompatible with high temperature processing.
  • a method and apparatus for depositing a polycrystalline or amorphous silicon/germanium alloy thin film on a substrate According to the present invention, a substrate is placed in a deposition chamber. A reactant gas mix including a silicon source gas and germane (GeH4) is then provided into the deposition chamber. The germane and silicon source gas are provided into the deposition chamber at a ratio so that the amount of germane in the chamber is less than or equal to 3% of the amount of silicon source gas in the chamber. The silicon source gas is then thermally decomposed to form silicon atoms and the germane is thermally decomposed to form germanium atoms. A polycrystalline or amorphous silicon film is then formed on the substrate from the germanium atoms and silicon atoms.
  • a reactant gas mix including a silicon source gas and germane (GeH4) is then provided into the deposition chamber.
  • the germane and silicon source gas are provided into the deposition chamber at a ratio so that the amount of germane in the chamber is less than or equal to 3% of
  • Figure 1 A is an illustration of a cross sectional view of a substrate on which the silicon-germanium alloy film of the present invention can be formed.
  • Figure IB is an illustration of a cross-sectional view showing the formation of a silicon-germanium alloy film on the substrate of Figure 1A.
  • Figure 2 is a flowchart which illustrates a method of forming an amo ⁇ hous or polycrystalline silicon germanium film in accordance with the present invention.
  • Figure 3A is an illustration of a single wafer thermal chemical vapor deposition apparatus which can be used to deposit the amo ⁇ hous or polycrystalline silicon germanium alloy film of the present invention.
  • Figure 3B is an illustration of a system control computer program which can be used to control apparatus of Figure 3B.
  • the present invention describes a novel method and apparatus for depositing a polycrystalline or amo ⁇ hous silicon germanium film.
  • numerous specific details are set forth such as specific process parameters and implementation in order to provide a thorough understanding of the present invention. It will be obvious, however, to one skilled in the art, that the present invention may be practiced without the specific details. In other instances well known chemical vapor deposition (CVD) equipment and semiconductor methodology have not been described in particular detail in order to not necessarily obscure the present invention.
  • CVD chemical vapor deposition
  • the present invention describes a method and apparatus for depositing at reduced temperature and high deposition rate a high quality uniform amo ⁇ hous or polycrystalline silicon germanium film with good step coverage.
  • a substrate or wafer
  • CVD thermal chemical vapor deposition
  • the pressure in the deposition chamber is then reduced to between 20-300 torrs and the substrate heated to a deposition temperature of between 420-650°C.
  • a reactant gas mix comprising a silicon containing gas, and germane (GeH4) is then fed into the deposition chamber.
  • the silicon source gas and germane are fed into the chamber at a ratio so that the amount of germane in the deposition chamber is less than or equal to 3% of the amount of silicon containing gas in the chamber.
  • Heat from the substrate causes the silicon containing gas to disassociate and provide silicon atoms and causes the germane to disassociate and provide germanium atoms.
  • a polycrystalline or amo ⁇ hous silicon germanium alloy having a very small percentage of germanium (less than 10 atomic percent) is then deposited on to the substrate from the germanium atoms and the silicon atoms.
  • a dopant gas, such as phosphine, arsenine, or diborane can be included in the reacting gas mix, if desired, to produce a doped silicon germanium film of the desired concentration density and conduction type.
  • the deposition temperature can be reduced by approximately 50°C and still obtain the same deposition rate as compared to when no germane is included in the reactive gas mix.
  • the deposited amo ⁇ hous or polycrystalline film is a silicon germanium alloy, the percentage of germanium in the film is low, preferably less than 5 atomic percent, so that the film has electrical and physical characteristics similar to polycrystalline or amo ⁇ hous silicon. Because the addition of germane reduces the temperature required to deposit a film, the present invention is able to deposit a silicon germanium film at temperatures as low as 520°C when silane is used as the silicon containing gas and as low as 420°C when disiline is used.
  • the present invention enables amo ⁇ hous and /or polycrystalline silicon germanium film to be formed at temperatures less than 550°C which allows a silicon germanium film to be formed on a substrate having low thermal stability, such as glass substrates, or substrates having films with low thermal stability. Additionally, the low deposition temperature makes the present invention compatible with low thermal budget processes. Still further, the low deposition temperature of the present invention improves the film step coverage which enables the silicon- germanium film to be deposited into high aspect ratio openings (openings greater than 2:1) such as found on substrates used for trench capacitor dynamic random access memories (DRAM).
  • DRAM trench capacitor dynamic random access memories
  • the silicon-germanium alloy film of the present invention will typically be formed on a substrate, such as semiconductor substrate 100 shown in Figure 1.
  • Substrate 100 is preferably a monocrystalline silicon wafer.
  • Substrate 100 need not necessarily be a silicon wafer, and may be other types of substrates such as gallium arsenide substrates, and glass (quartz) substrates used for flat panel displays.
  • Substrate 100 typically will include a plurality of spaced apart features or holes 102.
  • Features 102 can be due to, but not limited to, trenches formed in a substrate, field oxide regions grown on a substrate, and contact and via openings formed in an inner layer dielectric (ILD).
  • ILD inner layer dielectric
  • the process of the present invention is ideally suited for depositing a silicon germanium film into at high aspect ratio openings (greater than 2:1) during the formation of capacitors and contacts in the manufacture of modern high density dynamic random access memories (DRAMs) and other integrated circuits.
  • DRAMs high density dynamic random access memories
  • the present invention is ideally suited for use in the manufacturing of integrated circuits, the present invention is equally applicable to the fabrication of other products such as, but not limited to, flat panel displays.
  • substrate 100 can include films or be made of materials having low thermal stability such as commercial glass substrates used in the manufacturer of flat panel displays.
  • substrate 100 is defined as the material onto which a silicon germanium film of the present invention is deposited.
  • a substrate such as substrate 100
  • a thermal chemical vapor deposition apparatus such as single substrate reactor 300 shown in Figure 3.
  • the single substrate reactor 300 shown in Figure 3 has a top 312, sidewalk 314 and a bottom 318 that define a chamber 319 into which a single wafer or substrate 100 can be located.
  • Chamber 319 is designed to handle wafers up to 200mm and has a volume of approximately 10 liters such as used in the Applied Materials Centura Single Wafer Chamber Tool. It is to be appreciated that larger volume chambers for handling larger wafers such as 300mm, may be used if desired.
  • all flow rates provided herein are with respect to a 10 liter chamber and one skilled in the art will recognize the ability to scale flow rates for different volume chambers. What is important is to utilize the partial pressures of the gases provided herein.
  • Substrate 100 is mounted on a pedestal or susceptor 322 that is rotated by a motor (not shown) to provide a time average environment for substrate 100 that is cylindrically symmetric.
  • a susceptor circumscribing preheat ring 324 supported by sidewall 314 and surrounds susceptor 322 and substrate 100.
  • Lifting fingers 323 pass through holes (not shown) formed through susceptor 322 to engage the underside of substrate 100 to lift it off susceptor 322.
  • Substrate 100, preheat ring 324, and susceptor 322 are heated by light from a plurality of high intensity lamps 326 mounted outside of reactor 310.
  • High intensity lamps 326 were preferably tungsten halogen lamps which produce infrared (IR) light have a wavelength of approximately 1.1 microns.
  • the top 312 and bottom 318 of reactor 310 are substantially transparent to light to enable light from external lamps 326 to enter reactor 310 and heat susceptor 322, substrate 100 and preheat ring 324. Quartz is used for the top 312 and bottom 318 because it is transparent to light of a visible and IR frequency; because it is relatively high strength material that can support a large pressure difference across; and because it has a low rate of outgassing.
  • a suitable top temperature sensor 340 and a suitable bottom temperature sensor 342 such as pyrometers are positioned to measure the temperature of substrate 100 and a temperature of susceptor 322, respectively.
  • Apparatus 300 includes a system controller 350 which controls various operations, of apparatus 300 such as controlling gas flows, substrate temperature, and chamber pressure.
  • substrate 100 preheat ring 324 and susceptor 322 are heated by lamps 326 to a deposition temperature.
  • silane SSH4
  • disiline Si2H6
  • the deposition temperature is between 420-600°C.
  • the deposition rate decreases and step coverage improves.
  • the exact crystal structure of the deposited silicon germanium alloy depends upon the deposition temperature.
  • a reactant gas mix is fed into reaction chamber 319.
  • the deposition pressure and temperature are maintained within the specified ranges while reactant gas mix flows into reaction chamber 319 to deposit a silicon germanium alloy film 104 on substrate 100 as shown in Figure lb and setforth in block 210 of flow chart 200.
  • the reactant gas stream flows from gas input port 328, across preheat ring 324 where the gases are heated, across the substrate 100 in the direction of arrows 330 to deposit a silicon germanium film 104 thereon and out through exhaust port 332.
  • the gas input port 328 is connected, via conduit 334 to a gas supply represented by tanks 336 that provides one or a mixture of gases.
  • the reactant gas mix comprises a silicon containing gas, such as but not limited to silane (SiH4) and disiline (Si2H6), and germane (GeH4).
  • the silicon containing gas and germane (GeH4) are fed into the deposition chamber to produce an ambient which contains an amount of germane which is less than or equal to 3% of the amount of silicon containing gas.
  • Heat from the substrate, preheat ring, and susceptor causes the germane (GeH4) to disassociate and provide germanium atoms and causes the silicon source gas to disassociate and provide silicon atoms.
  • the silicon atoms and germanium atoms then combine to blanket deposit a silicon germanium alloy 104 on substrate 100.
  • germane (GeH4) The small amount of germane (GeH4) provided in the deposition chamber acts as a catalyst for the disassociation of the silicon source gas and thereby enables lower deposition temperatures to be achieved. That is, because germane (GeH4) decomposes easier than silane or disiline, it decomposes at a lower temperature than silane or disiline. When germane decomposes, it releases energy which transfers to the silicon source gas and assists in the disassociation of the silicon source gas.
  • a polycrystalline or amo ⁇ hous silicon germanium alloy film can be deposited at the same deposition rate, but at a deposition temperature of 50°C lower than as with an amo ⁇ hous or polycrystalline silicon film formed under the same conditions and reactant gases but without germane (GeH4).
  • a goal of the present invention is to provide an amo ⁇ hous or polycrystalline silicon germanium film which electrically and physically closely resembles an amo ⁇ hous or polycrystalline silicon film.
  • it is important to utilize a concentration ratio of silicon and germanium which will produce a silicon germanium film which inco ⁇ orates less than 10 percent atomic germanium, and preferably less than 5% and ideally less than 3% therein.
  • Inco ⁇ orating less than 10% of germanium into the silicon germanium alloy ensures that the silicon structure is not destroyed.
  • deposition temperatures less than 550°C can be used to form high quality amo ⁇ hous and polycrystalline silicon germanium films.
  • a relatively low deposition temperature can be achieved without the use of additional excitation sources such as plasma enhancement.
  • hydrogen incorporation into the silicon germanium film 104 is less than .1 atomic percent and less than .01 atomic percent after an anneal.
  • the silicon containing gas is provided into deposition chamber 319 at a flow rate of between 100 to 2000 seem (standard cubic centimeters per minute) to generate a silicon containing gas partial pressure of between 1.5 to 30 torr.
  • Germane is provided into the deposition chamber at a rate of between 1.0 to 20 seem to produce a germane partial pressure of between 0.015 to 0.30 torr.
  • a carrier gas such as, but not limited to, H2, or N2 can be used to provide germane into the reaction chamber.
  • the diluted germane can then be fed into the reaction chamber at a rate of between 100- 2000 seem to produce a germane partial pressure between 0.015 to 0.3 torr.
  • a dopant gas is preferably included into the reactant gas mix in order to produce an insitu dopant silicon germanium film.
  • a dopant gas is fed into reaction chamber 319 to produce a dopant gas partial pressure of between 0 to 0.30 torr with 0.15 torr being preferred.
  • the reactant gas mix has a dopant gas concentration which is less than or equal to 1% of the silicon source gas concentration.
  • the dopant gas is preferably diluted in the carrier gas such as hydrogen to form a 1% diluted dopant gas (i.e. diluted dopant gas equals 1% dopant gas and 99% carrier gas).
  • the diluted dopant gas is fed into the reaction chamber 319 at a rate between 0-2000 seem and preferably at a rate of 100-300 seem.
  • Phosphine (PH3) is the preferred doping gas but other doping gases such as, but not limited to, arsenine (AsH3) may be used if desired.
  • the silicon containing gas, the diluted germane, and the diluted doping gas are preferably fed into the reaction chamber 319 with the carrier gas such as, but not limited to, hydrogen, helium, argon or nitrogen.
  • the silicon containing gas, the diluted germane, and the dopent gas are added to a carrier gas which flows into reacting chamber 319 at a rate of between 4-12 SLM (standard liters per minute) and preferably at a rate of approximately 10 SLM.
  • Reactant gas is fed into reaction chamber 319 until a silicon germanium film of a desired thickness (T) is deposited over substrate 100.
  • Hydrogen (H, ) is preferred as the carrier gas and as the dilution gas in the present invention because an ambient comprising a large amount of H 2 can withstand a large thermal gradient.
  • the temperature of quartz windows 312 and 318 and sidewall 314 can be maintained at a temperature significantly lower then the temperature of substrate 100 during film deposition.
  • film deposition or coating on the windows and sidewall is substantially reduced. It is to be appreciated that film deposition on windows 312 can interfere with light transmission and thereby cause nonuniformity in substrate temperatures from substrate to substrate. Additionally by reducing film deposition on sidewalls 314 and windows 312 and 318 more wafers can be processed before cleaning is required.
  • a rapid thermal anneal at temperature about 1000°C for less than 15 seconds in a nitrogen /oxygen ambient can be used.
  • annealing substrate 100 requires an additional step many integrated circuit manufacturing processes, such as DRAM processes, require subsequent anneals for other pu ⁇ oses such as suicide formation and so the anneal step can be included without affecting throughput. Utilizing the anneal step of the present invention allows a low resistance polycrystalline silicon germanium film to be formed in high aspect ratio openings without void formation.
  • the process of the present invention can form a high quality polycrystalline or amo ⁇ hous silicon germanium film with a high dopant
  • the present invention can be reliably used to fill openings in a substrate 100 having a width less than .28 microns and an aspect ratio greater than 2.0 at a high deposition rate without creating voids therein.
  • the process of the present invention forms a silicon- germanium polycrystalline film with an average grain length of less than 1000 A or approximately 100 atoms.
  • the system controller 350 includes a hard disk drive (memory 352), a floppy disk drive and a processor 354.
  • the processor contains a single board computer (SBC), analog and digital input/output boards, interface boards and stepper motor controller board.
  • SBC single board computer
  • Various parts of CVD system 300 conform to the Versa Modular Europeans (VME) standard which defines board, card cage, and connector dimensions and types.
  • VME Versa Modular Europeans
  • the VME standard also defines the bus structure having a 16-bit data bus and 24-bit address bus.
  • System controller 350 controls all of the activities of the CVD machine.
  • the system controller executes system control software, which is a computer program stored in a computer-readable medium such as a memory 138.
  • memory 352 is a hard disk drive, but memory 352 may also be other kinds of memory.
  • the computer program includes sets of instructions that dictate the timing, mixture of gases, chamber pressure, chamber temperature, lamp power levels, susceptor position, and other parameters of a particular process.
  • other computer programs such as one stored on another memory device including, for example, a floppy disk or other another appropriate drive, may also be used to operate controller 350.
  • An input /output device 356 such as a CRT monitor and a keyboard is used to interface between a user and controller 350.
  • Figure 3B illustrates an example of the hierarchy of the system control computer program stored in memory 356.
  • the system control program includes a chamber manager subroutine 370.
  • the chamber manager subroutine 370 also controls execution of various chamber component subroutines which control operation of the chamber components necessary to carry out the selected process set. Examples of chamber component subroutines are process gas control subroutine 372, pressure control subroutine 374 and a lamp control subroutine 376. Those having ordinary skill in the art would readily recognize that other chamber control subroutines can be included depending on what processes are desired to be performed in the process chamber 319.
  • the chamber manager subroutine 370 selectively schedules or calls the process component subroutines in accordance with the particular process set being executed.
  • the chamber manager subroutine 370 includes steps of monitoring the various chamber components, determining which components needs to be operated based on the process parameters for the process set to be executed and causing execution of a chamber component subroutine responsive to the monitoring and determining steps.
  • the process gas control subroutine 372 has program code for controlling process gas composition and flow rates.
  • the process gas control subroutine 372 controls the open/close position of the safety shut-off valves, and also ramps up /down the mass flow controllers to obtain the desired gas flow rate.
  • the process gas control subroutine 372 is invoked by the chamber manager subroutine 370, as are all chamber component subroutines and receives from the chamber manager subroutine process parameters related to the desired gas flow rates.
  • the process gas control subroutine 372 operates by opening the gas supply lines, and repeatedly (i) reading the necessary mass flow controllers, (ii) comparing the readings to the desired flow rates received from the chamber manager subroutine 370, and (iii) adjusting the flow rates of the gas supply lines as necessary. Furthermore, the process gas control subroutine 372 includes steps for monitoring the gas flow rates for unsafe rates, and activating the safety shut-off valves when an unsafe condition is detected.
  • the lamp control subroutine 376 comprises program code for controlling the power provided to lamps 326 is used to heat the substrate 120.
  • the lamp control subroutine 376 is also invoked by the chamber manager subroutine 370 and receives a target, or setpoint, temperature parameter.
  • the lamp control subroutine 376 measures the temperature by measuring voltage output of the temperature measurement devices directed at the susceptor 322 compares the measured temperature to the setpoint temperature, and increases or decreases power applied to the lamps obtain the setpoint temperature.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
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Abstract

L'invention porte sur un procédé et un appareil de dépôt sur un substrat d'un film mince d'alliage silicium/germanium polycristallin ou amorphe. Selon cette invention, le substrat est placé dans une chambre de déposition. Un mélange de gaz de réaction comprenant un gaz source de silicium et le germane (GeH4) est ensuite introduit dans la chambre de déposition. Le germane et le gaz source de silicium sont introduits dans la chambre de déposition dans un rapport tel que la quantité du germane dans la chambre soit inférieure ou égale à 3 % de la quantité du gaz source de silicium dans la chambre. Le gaz source de silicium est ensuite décomposé thermiquement pour former des atomes de silicium, et le germane est également décomposé thermiquement pour former des atomes de germanium. Un film de silicium polycristallin ou amorphe est ensuite formé sur un substrat à partir des atomes de germanium et de silicium.
PCT/US1999/014773 1998-07-09 1999-06-29 Procede et appareil de formation de films d'alliage silicium/germanium amorphes et polycristallins WO2000003061A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020017000352A KR20010053459A (ko) 1998-07-09 1999-06-29 비정질 및 다결정 실리콘 게르마늄 합금 박막 형성 방법및 장치
JP2000559275A JP2002520487A (ja) 1998-07-09 1999-06-29 アモルファスシリコン及び多結晶シリコンとゲルマニウムのアロイ膜の形成方法及び装置
EP99932079A EP1100978A1 (fr) 1998-07-09 1999-06-29 Procede et appareil de formation de films d'alliage silicium/germanium amorphes et polycristallins

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US11352998A 1998-07-09 1998-07-09
US09/113,529 1998-07-09

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JP2003197535A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp 気相成長装置および気相成長装置の温度検出方法ならびに温度制御方法
CN103515224A (zh) * 2012-06-29 2014-01-15 无锡华润上华科技有限公司 多晶硅在离子注入后的快速退火方法
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
CN111968909A (zh) * 2020-10-22 2020-11-20 晶芯成(北京)科技有限公司 一种半导体结构的制造方法
WO2022108868A1 (fr) * 2020-11-20 2022-05-27 Applied Materials, Inc. Dépôt de film de silicium-germanium conforme

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KR101106480B1 (ko) * 2009-06-12 2012-01-20 한국철강 주식회사 광기전력 장치의 제조 방법
US8450221B2 (en) * 2010-08-04 2013-05-28 Texas Instruments Incorporated Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197535A (ja) * 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp 気相成長装置および気相成長装置の温度検出方法ならびに温度制御方法
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
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CN111968909A (zh) * 2020-10-22 2020-11-20 晶芯成(北京)科技有限公司 一种半导体结构的制造方法
WO2022108868A1 (fr) * 2020-11-20 2022-05-27 Applied Materials, Inc. Dépôt de film de silicium-germanium conforme
US12046468B2 (en) 2020-11-20 2024-07-23 Applied Materials, Inc. Conformal silicon-germanium film deposition

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