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WO2000065643A1 - Améliorations se rapportant à la production sous forme sol-gel de couches minces de titanate zirconate de plomb - Google Patents

Améliorations se rapportant à la production sous forme sol-gel de couches minces de titanate zirconate de plomb Download PDF

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WO2000065643A1
WO2000065643A1 PCT/GB2000/001444 GB0001444W WO0065643A1 WO 2000065643 A1 WO2000065643 A1 WO 2000065643A1 GB 0001444 W GB0001444 W GB 0001444W WO 0065643 A1 WO0065643 A1 WO 0065643A1
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zirconate titanate
lead zirconate
layers
substrate
solution
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PCT/GB2000/001444
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English (en)
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Roger William Whatmore
Qi Zhang
Zhaorong Huang
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The Secretary Of State For Defence
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials
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    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
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    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based

Definitions

  • the present invention concerns improvements in or relating to the preparation and processing of thin films of lead zirconate titanate. More especially, but not exclusively, the invention concerns the preparation and processing of lead zirconate titanate thin films having a perovskite phase at low temperatures ( ⁇ 500°C) for the integration of the thin films with silicon signal processing circuitry.
  • Ferroelectric lead zirconate titanate (PbZr x Ti ! _ x O 3 ) (PZT) thin films are of growing technological interest for a diverse range of applications including nonvolatile semiconductor memory, optical modulator, high- frequency surface acoustic wave (SAW) devices, and pyroelectric infra- red detectors.
  • SAW surface acoustic wave
  • PZT thin films which have been prepared at high temperatures ( > 500°C) exceed the limit of the temperature that the Al/Si metallisation on a silicon substrate such as a substrate for use in preparation of signal process circuitry can stand.
  • a desired object of the invention is the preparation of a PZT sol gel precursor and the formation from such precursor of PZT films, preferably having perovskite orientation, at low temperatures ( ⁇ 500°C) by control of reaction conditions during the preparation of the PZT sol gel precursor in addition to the control of the coating conditions.
  • a process for preparing a lead zirconate titanate precursor sol comprising the steps of dissolv i ng lead acetate in acetic acid wherein the ratio of lead acetate to acetic acid is between Ig- lml and lg:3ml. dehydrating the mixture by distillation; reacting the lead acetate solution with a mixture of zircon i um n-propoxide and titanium isopropoxide dissolved in methanol; opt i onally adjusting the concentration of the precursor to 0.4M using methanol; and adding ethylene glycol to the precursor in amounts sufficient to ensure the particle size in solution in less than 9 nanometers.
  • the process uses lead acetate, titanium isopropoxide and zirconium n- propoxide as the basic precursors, which are dissolved in mixtures of acetic acid and methanol, with ethylene glycol used as an additive.
  • ethylene glycol used as an additive.
  • the ratio of added ethylene glycol to lead is in the range 1 : 1 to 1:5 (wt%) .
  • a key aspect of the process which has not been described before is the control of the particle size of the moieties suspended in the sol. This, coupled with precisely determined ratios of the chemicals, particularly the amounts of acetic acid and ethylene glycol used, allow us to obtain very low firing temperatures when producing lead zirconate titanate films using
  • a process of coating a substrate with one or more layers of lead zirconate titanate having a substantially completely perovskite orientated phase comprising the steps of applying a layer of the precursor according to the first aspect of the invention to the substrate, drying the layer at a temperature of 100-400°C and either a) f.ring the dried layer at a temperature of 400-500 » C and applying further layers if required; or b) applying and drying one or more further !a ers before firing the dried layers at a temperature of 400-500°C to anneal them together and applying further layers if required.
  • PZT films show a pyroelectric effect. It will readily be appreciated by those skilled in the art that any material which shows a pyroelectric effect will also exhibit piezoelectric properties which mean that thin films of such materials can be used in electronic devices exploiting the effect, such as microphones, accelerometers, motors, actuators, and resonant devices for the filtering of radio frequency signals.
  • Figure 1 shows an XRD pattern of a ten layer film made using a coating solution prepared according to process 1 wherein each layer was dried at 200°C for 3 mins and annealed at 480°C for 15 min;
  • Figure 2 shows the relationship of (III) orientation of PZT perovskite phase to drying temperature
  • Figure 3 shows the relationship of annealing temperature and time for the formation of perovskite PZT phase for a three layer film
  • Figure 4 shows the XRD patterns of the PZT films made using sols of different particle size
  • Figure 5 shows the XRD patterns of three PZT films of varying ratios of lead acetate to acetic acid
  • Figure 6 shows the XRD patterns of two 12 layer PZT films annealed at 460°C and 480°C respectively with two layers fired together;
  • Figure 7 shows the electric properties of a 12 layer PZT film made from a coating solution of process 1 each layer dried at 200°C for 3 min and two layers annealed together at 460°C for 120 min;
  • Figure 8 shows the relationship of dc with time under a constant bias voltage of 20 volts of a PZT film made by method 2 from a coating solution of process 1 ;
  • Figure 9 shows the I-V and Ry-V curves for a PZT film made by method 2 from a coating solution of process 1.
  • Air sensitive solutions were stored under nitrogen in a dry box.
  • the raw materials were transferred into reaction vessels using dry box techniques.
  • Lead acetate Pb(CH 3 COO) 2 3H 2 O (A.R. grade) was purchased from Fisher Scientific Chemicals, UK. It was calibrated and found to be 99.99% pure. Titanium isopropoxide Ti(O'Pr) 4 (99.999%) was purchased from Aldrich. The Ti(O'Pr) 4 was further purified by distillation prior to use.
  • Zirconium n-propoxide Zr(O n Pr) 4 Pr n OH (70 wt.%) was purchased from Aldrich. It was calibrated and found to vary in the range 70-78 wt. % but not further purified before use.
  • Methanol (anhydrous, 99.8%) was purchased from Aldrich and was not further dried before use.
  • Step la Lead acetate Pb(CH 3 COO) 2 3H 2 O (20g) was dissolved in acetic acid CH 3 COOH (20ml) with gentle warming. Here the ratio of lead acetate to acetic acid is lg:lml.
  • the colourless solution was heated to reflux at 116-117°C for 3h in air, then distilled to remove the water until the temperature of the vapour reached 105°C for 5 mins. 4 ⁇ 5ml of distillates was collected. The solution was cooled to room temperature.
  • Step 2a Zirconium n-propoxide ZR(O n Pr) 4 n PrOH (76%) (6.1g) was mixed with Titanium isopropoxide Ti(O'Pr) 4 (9.4g) in a glove box.
  • the mixture containing the Zr and Ti precursors was stirred for 3 min. under nitrogen.
  • Methanol (20ml) was added to the Zr/Ti mixed solution.
  • a white solid was formed straight away.
  • the system was heated to reflux for 2.5h (white solid did not dissolve at this stage).
  • the lead precursor of step la was added to the Zr/Ti mixed system in a dry environment (glove box) . Then the new mixture was heated to reflux for 2h. All the solids were dissolved in a few minutes after mixing.
  • a yellow solution was formed and filtered in air through a 0.2 ⁇ filter (ZapCap-CR filters, hydrophilic nylon membrane, Aldrich) after the solution had cooled to room temperature.
  • the PZT precursor concentration was adjusted to 0.4M by adding methanol (70-80ml) in air. Ethylene glycol (5g) was added to the solution immediately. The solution was then stirred for 3 min at room temperature.
  • the formed PZT solution was stored under nitrogen in a dry box or in the fridge (0°C) overnight prior to use. pH value of the solution is 4.0.
  • Step lb - Lead acetate Pb(CH 3 COO) 2 3H 2 O (20g) was dissolved in acetic acid CH 3 COOH (40ml) with gentle warming.
  • the ratio of lead acetate to acetic acid is lg:2ml.
  • the colourless solution was heated to reflux at 116-117°C for 3h in air, then distilled to remove the water until the temperature of the vapour reached 105°C for 5 mins. 4 ⁇ 5ml of distillates was collected. The solution was cooled to room temperature.
  • Step 2b Zirconium n-propoxide Zr(O n Pr) 4 n PrOH (76%)(6.1g) was mixed with Titanium isopropoxide Ti(O'Pr) 4 (9.4g) in a glove box.
  • the mixture containing the Zr and Ti precursors was stirred for 3 min. under nitrogen.
  • Methanol (20ml) was added to the Zr/Ti mixed solution. A white solid was formed straight away.
  • the system was heated to reflux for 2.5h (white solid did not dissolve at this stage) .
  • the lead precursor of step lb was added to the Zr/Ti mixed system in a dry environment (glove box) . Then the new mixture was heated to reflux for 2h. All the solids were dissolved a few minutes after mixing.
  • a yellow solution was formed and filtered in air through a 0.2 ⁇ filter (ZapCap-CR filters, hydrophilic nylon membrane or teflon membrane, Aldrich) after the solution had cooled to room temperature.
  • the PZT precursor was adjusted to 0.4M by adding methanol (50 ⁇ 60ml) in air. Ethylene glycol (lOg) was added to the solution immediately. The solution was then stirred for 3 min at room temperature.
  • the formed PZT solution was stored under nitrogen in a dry box or in the fridge (0°C) overnight prior to use. pH value of the solution is 3.52.
  • Step lc - Lead acetate Pb(CH 3 COO) 2 3H 2 O ⁇ 20g) was dissolved in acetic acid CH 3 COOH (60ml) with gentle warming.
  • the ratio of lead acetate to acetic acid is lg:3ml.
  • the colourless solution was heated to reflux at 116-117°C for 3h in air, then distilled to remove the water until the temperature of the vapour reached 105°C for 5 mins. 4 ⁇ 5ml of distillates was collected. The solution was cooled to room temperature.
  • Step 2c Zirconium n-pro P oxide Zr (O"Pr) 4 n PrOH (76%) ⁇ 6.1g) was mixed with Titanium isopropoxide TKO'Pr), (9.4g) in a glove box.
  • the mixture containing the Zr and Ti precursors was stirred for 3 min. under nitrogen.
  • Methanol (20ml) was added to the Zr/Ti mixed solution.
  • a white solid was formed straight away.
  • the system was heated to reflux for 2.5h (white solid did not dissolve at this stage) .
  • the lead precursor of step lc was added to the Zr/Ti mixed system in a dry environment (glove box) . Then the new mixture was heated to reflux for 2h. All the solids dissolved immediately.
  • a yellow solution was formed and filtered in air through a 0.2 ⁇ filter (ZapCap-CR filters, hydrophilic nylon membrane or teflon membrane, Aldrich) after the solution had cooled to room temperature.
  • the PZT precursor was adjusted to 0.4M by adding methanol (30 - 40ml) in air. Ethylene glycol (lOg) was added to the solution immediately. The solution was then stirred for 3 min at room temperature.
  • the formed PZT solution was stored under nitrogen in a dry box or in the fridge (0°C) overnight prior to use. pH value of the solution is 3.29.
  • the concentration of coating solution made by any one of processes 1-3 was 0.4M.
  • the substrate was Pt/Ti/SiO 2 /Si (100nm/5nm/400nm/(100)).
  • Spin coating equipment was a photo resist spinner (Model 1-EC101D- R790), Headway Research Inc). Spin coating conditions were 3000rpm for 30 seconds at room temperature.
  • Two hot plates were used to dry and decompose PZT films. One hot plate was set at 200°C and the other had higher temperature (CEE Custom Model 1100 Hotplate, Brewer Science, Inc). Both hot plates were calibrated by a SensArray's Process Probe wafer (Intertrade Scientific) . Coatings were put on the 200°C hot plate for 3 min for drying and then firing at higher temperature. The firing time depends on the temperature. At 460°C, it needs 60min and at 480°C, it needs 15 min for each layer. More layers can be built on by repeating above procedure. A l ⁇ m thick crack-free film needs 12 ⁇ 14
  • Another way to make films is to anneal two layers together after each layer was dried.
  • the concentration of coating solution made by any one of processes 1 -3 was 0.4M.
  • the substrate was Pt/Ti/SiO 2 /Si (100nm/5nm/400nm/(100)) .
  • Spin coating equipment was a photo resist spinner (Model 1-EC101D-R790, Headway Research Inc) . Spin coating conditions were 3000rpm for 30 seconds at room temperature.
  • Two hot plates were used to dry and decompose PZT films. One hot plate was set at 200°C and the other had higher temperature (CEE Custom Model 1100 Hotplate, Brewer Science, Inc) . Both hot plates were calibrated by a SensArray's Process Probe wafer (Intertrade Scientific). Each layer was dried at 200°C and every two layers were annealed at higher temperatures. The firing time depends on the temperature (see Results). More layers can be built on by repeating above procedure. A l ⁇ m thick crack-free film needs 12
  • Figure 1 shows an XRD pattern of a ten-layer film made by using a coating solution prepared according to Process 1 wherein each layer was dried at 200°C for 3 min and annealed at 480°C for 15 min.
  • a strong (111) perovskite phase indicated a highly preferred orientation.
  • the particle size (5-6nm) is believed to contribute to this.
  • FIG. 2 shows the relation of (111) orientation of PZT perovskite phase of a film made from process 1 with drying temperature. It can be seen that only for a drying temperature of 200°C, were the films fully (111) oriented, at the drying temperature of about 350°C, the films had the biggest (100) orientation.
  • Figure 3 shows the relation of annealing temperature and time for the formation of perovskite PZT phase for a three-layer film made by method 1. Each layer was annealed at 480°C for 15 min.
  • Figure 4 shows the XRD patterns of the PZT films made by using sols with different particle size. All the films had ten layers and each layer was dried at 200°C and annealing at 480°C for 15 min. It was found that only when the particle size was less than 9nm could the films have a pure perovskite phase at the specified film making conditions.
  • Figure 5 shows the XRD patterns of three films each made from a precursor sol according to one of processes 1-3. Each film had ten layers with each layer dried at 200°C for 3 m n and fired at 480°C for 10 min. Pyrochlore phase was only observed in the film made by using lead acetate: Acetic acid ratio of lg: 1ml solution.
  • Fig. 6 shows the XRD patterns of two 12-layer PZT films annealed at 460°C and 480°C, respectively, with two layers fired together.
  • strong [l ll]-only orientation films can be made by the methods of either firing one layer (method 1) or two layers (method 2) at 460°C or 480°C.
  • Table 1 lists the parameters for the ten-layer films made according to method 1 but with different firing temperatures using the solution of Process 1. Drying was at 200°C for 3 mins. Firing was at 440°C, 460°C, 480°C or 500°C for 2h, lh, 15 min or 5 min for each layer respectively.
  • Process 1 was used to make the solution.
  • the film was dried at 200°C for 3 min each layer.
  • Two layers annealed together at 460°C for 120 min. There are 12 layers in all.
  • Film thickness is about 1 ⁇ m.
  • the breakdown voltage was found to be 70 volts, or 700 KV/cm.
  • Fig. 8 shows the relationship of the resistivity with time under a constant bias voltage 20 volts of a thin film made by method 2.
  • the I-V and R y -V curves for a typical film made by method 2 are shown in Fig. 9.

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Abstract

La présente invention concerne un procédé de formation de couches minces de titanate zirconate de plomb possédant une phase pérovskite, convenant aux circuits de traitement du signal au silicium, consistant à sécher et à cuire une ou plusieurs couches d'un sol-gel précurseur de titanate zirconate de plomb appliqué sur un substrat à basse température (∫500°C). Le précurseur est obtenu par dissolution d'acétate de plomb dans de l'acide acétique, déshydratation et réaction du produit avec de l'isopropoxyde titane et du n-propoxyde de zirconium dans du méthanol, avec éventuellement un ajustement de la concentration du précurseur à 0.4M à l'aide de méthanol, puis par addition d'éthylène glycol au précurseur dans des quantités permettant d'assurer l'obtention d'une granulométrie en solution inférieure à 9 nanomètres. Des couches minces de titanate zirconate de plomb sont produites par étalement d'une ou plusieurs couches du sol-gel précurseur sur un substrat, séchage de la couche ou de chaque couche à une température d'environ 200-300 °C et cuisson de la couche ou des couches séchées à une température d'environ 400-500 °C.
PCT/GB2000/001444 1999-04-24 2000-04-14 Améliorations se rapportant à la production sous forme sol-gel de couches minces de titanate zirconate de plomb WO2000065643A1 (fr)

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GB9909375.9 1999-04-24
GBGB9909375.9A GB9909375D0 (en) 1999-04-24 1999-04-24 Improvements in or relating to sol gel processing of lead zirconate titanate thin films

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Publication number Priority date Publication date Assignee Title
WO2002061355A1 (fr) * 2000-12-20 2002-08-08 Yazaki Corporation Appareil et procede associe pour revetements sol-gel a sechage rapide
EP1369501A3 (fr) * 2002-05-21 2005-10-12 Sharp Kabushiki Kaisha Préparation de films LCPOM minces ayant des propriétés de changement de résistance réversible
SG115500A1 (en) * 2002-10-09 2005-10-28 Inst Materials Research & Eng Method to produce a reliable piezoelectric thick film on a substrate
CN108780839A (zh) * 2016-03-16 2018-11-09 赛尔科技有限公司 压电薄膜元件
CN111978085A (zh) * 2020-08-19 2020-11-24 东莞东阳光科研发有限公司 一种纯锆钛酸铅纳米纤维陶瓷材料的制备方法
CN113325040A (zh) * 2021-05-28 2021-08-31 中国农业大学 一种感存算一体化微纳电子器件及其制备方法
WO2022148080A1 (fr) * 2021-01-05 2022-07-14 西湖大学 Film mince de titanate-zirconate de plomb pour la communication à haute vitesse de nouvelle génération, procédé de préparation s'y rapportant et son application

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002061355A1 (fr) * 2000-12-20 2002-08-08 Yazaki Corporation Appareil et procede associe pour revetements sol-gel a sechage rapide
US6871418B2 (en) 2000-12-20 2005-03-29 Yazaki Corporation Apparatus and related method for rapid cure of sol-gel coatings
EP1369501A3 (fr) * 2002-05-21 2005-10-12 Sharp Kabushiki Kaisha Préparation de films LCPOM minces ayant des propriétés de changement de résistance réversible
SG115500A1 (en) * 2002-10-09 2005-10-28 Inst Materials Research & Eng Method to produce a reliable piezoelectric thick film on a substrate
CN108780839A (zh) * 2016-03-16 2018-11-09 赛尔科技有限公司 压电薄膜元件
CN111978085A (zh) * 2020-08-19 2020-11-24 东莞东阳光科研发有限公司 一种纯锆钛酸铅纳米纤维陶瓷材料的制备方法
WO2022148080A1 (fr) * 2021-01-05 2022-07-14 西湖大学 Film mince de titanate-zirconate de plomb pour la communication à haute vitesse de nouvelle génération, procédé de préparation s'y rapportant et son application
CN113325040A (zh) * 2021-05-28 2021-08-31 中国农业大学 一种感存算一体化微纳电子器件及其制备方法
CN113325040B (zh) * 2021-05-28 2022-05-13 中国农业大学 一种感存算一体化微纳电子器件及其制备方法

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