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WO2000065127A1 - Appareil et procede de distribution de vapeur a une chambre de depot chimique en phase vapeur - Google Patents

Appareil et procede de distribution de vapeur a une chambre de depot chimique en phase vapeur Download PDF

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Publication number
WO2000065127A1
WO2000065127A1 PCT/US2000/011201 US0011201W WO0065127A1 WO 2000065127 A1 WO2000065127 A1 WO 2000065127A1 US 0011201 W US0011201 W US 0011201W WO 0065127 A1 WO0065127 A1 WO 0065127A1
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WO
WIPO (PCT)
Prior art keywords
precursor
vapor
flow
passage
pressure
Prior art date
Application number
PCT/US2000/011201
Other languages
English (en)
Inventor
John J. Hautala
Johannes F. M. Westendorp
Louise S. Barriss
Robert W. Milgate
Original Assignee
Tokyo Electron Limited
Tokyo Electron Arizona, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited, Tokyo Electron Arizona, Inc. filed Critical Tokyo Electron Limited
Publication of WO2000065127A1 publication Critical patent/WO2000065127A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • This invention relates to chemical vapor deposition (CVD) and particularly to the delivery to a CVD chamber of vapor from sources that are normally solid at standard temperatures and pressures. Particularly, the invention relates to the delivery of vapors of substances such as CVD precursors to CVD chambers 00/65127
  • barrier layer films of, for example, tantalum or tantalum compounds or of titanium or titanium compounds.
  • Chemical vapor deposition (CVD) processes such as tnose used in the manufacture of semiconductor devices require delivery of quantities of vapor to a CVD reactor at precisely controlled rates.
  • the quality of the deposited films as well as the efficiency of the deposition process depends in part on the level of precision with which delivery of precursor vapor can be controlled.
  • Film purity, film uniformity, film resistivity and fiim deposition rate are affected by the rates at which gases carrying the materials to be deposited, or which are to react with those gases, are delivered into the deposition chamber.
  • Materials, particularly metals such as titanium and tantalum, are deposited to form films of the metal, or of compounds of the metal such as titanium nitride ortantaium nitride, by reacting gases such as hydrogen, nitrogen, ammonia or combinations thereof with halides of tantalum or titanium that are delivered to a reaction chamber in vapor form.
  • the metal halide vapor is often produced in an evaporation vessel from which it is usually delivered to the CVD reaction chamber mixed with an inert carrier gas such as helium or argon.
  • the metal halide is typically in a solid state when at room temperature and is vaporized from a liquid or solid state in an evaporation vessel that has been evacuated to a vacuum pressure level.
  • Carrier gas flows through the evaporation vessel and where it is combined with the precursor vapor at a pressure greater than that of the CVD reaction chamber to which the precursor is to be delivered.
  • the carrier gas picks up the evaporated precursor by mixing 0/65127
  • AMU range such as TiX x , where the precursor molecular weight is substantially greater than that of the low molecular weight carrier, such as argon or helium.
  • carrier gas also has the tendency to pick up solid particulates of the precursor in the evaporation vessel and delivering them to the CVD reaction chamber where they present the same disadvantages as other particulate contaminants. Particulates on the surface of a semiconductor wafer during processing can result in the production of defective semiconductor devices. Such particulates are often generated when the precursor is in a solid powder state in the evaporation vessel.
  • carrier gas can entrain small particles of the precursor powder and transfer them to the processing chamber.
  • a precursor gas can also burrow into the surface of a solid precursor, changing its effective surface area and affecting its evaporation rate over time, which impairs the accuracy of precursor flow rate delivery to the processing chamber.
  • a solid precursor source presents a surface area that is susceptible to change during the evaporation process. As solid material turns to vapor, different rates of evaporation can occur at different portions of the solid material surface. This causes the rate of precursor production to change, which can cause precursor concentration in the carrier gas and the rate of flow of precursor vapor to the reactor to vary.
  • An objective of the present invention is to deliver precursor vapor from a source that is in a solid state at standard temperature and pressure to a reaction chamber for use in a chemical vapor deposition (CVD) reaction, and particularly to deliver precursor vapor to a CVD reactor at a precisely controlled rate.
  • a further objective of the present invention is to deliver precursor vapor to a CVD chamber while minimizing the introduction of particulate contamination into the chamber in the process.
  • an evaporation vessel for supplying precursor vapor to a CVD reactor.
  • Solid precursor material is placed in the vessel where it is converted to vapor.
  • the evaporation vessel is connected to the CVD reactor chamber through a tube of relatively large diameter in which is placed a small diameter orifice.
  • the solid precursor is heated in the evaporation vessel to a temperature sufficient to produce a precursor vapor pressure that will 00/651
  • a controller monitors the pressure upstream and downstream of the orifice and controls a flow control device in the tube upstream of the orifice to produce a desired flow rate of precursor vapor through the tube and into the processing chamber of the CVD reactor.
  • the flow rate is controlled in accordance with factors retrieved from a look-up table in response to the measurements of the pressures.
  • the data in the look-up tables accounts for the flow characteristics of the tube and the orifice, and determines a flow control output signal to which the flow control responds in a way that takes into account both choked and unchoked flow characteristics of the tube and orifice.
  • the evaporation vessel is evacuated and then filled with the precursor vapor without the introduction of carrier gas so that the precursor is the only material occupying the vessel.
  • the total rate of flow through the tube and the orifice is the rate of flow of only precursor vapor, so that the determination of the rate of flow of the precursor does not require a determination or estimate of the concentration of precursor vapor in the carrier gas, which is often difficult to accurately obtain.
  • the normally solid precursor is heated to a liquid state in the evaporation vessel.
  • the inside of the evaporation vessel has vertical walls so that a constant surface area of the liquid precursor source is provided and maintained as the level of liquid precursor in the evaporation vessel changes, which constant surface area in turn 00/651
  • the temperatures of surfaces downstream of the precursor source are preferably controlled at temperatures that are higher than the temperature to which the solid source is heated, thereby preventing condensation of the precursor vapor.
  • Such controlled temperatures are all below the reaction temperature of the CVD reaction that is to take place in the CVD processing chamber so that disassociation or other reaction of the precursor does not occur prematurely, but rather only at the surface of the substrate on which the film is to be deposited in the processing chamber.
  • a halide form of a precursor is heated in the evaporation vessel in the absence of carrier gas to produce a vapor pressure in the range of at least about 3 Torr, preferably about 5 to 6 Torr, with pressure in the CVD reactor being preferably in the range of about 0.1 Torr to about 2 Torr, thereby producing a total pressure drop from the evaporation vessel to the CVD reaction chamber of at least about 4 Torr across the tube connecting the evaporation vessel with the CVD reaction chamber, including the flow control devices and orifice connected in the tube.
  • a flow control device in the form of a control valve to be located between the evaporation vessel and the orifice in the tube to produce a pressure drop from the control valve to the CVD reaction chamber that is at least 10 milli- Torr, which can be varied to proportionally control the flow rate.
  • Precursors such as tantalum pentafiuoride, tantalum pentachloride, tantalum pentabromide and titanium tetraiodide are particularly suitable for use with the present invention.
  • the precursors are heated in the evaporation employrigg. « « -,, 00/65127
  • the present invention preferably employs a process controller that contains a multiplier table with values that control a flow control valve at the upstream end of the line from the evaporation chamber to the CVD chamber.
  • a process controller that contains a multiplier table with values that control a flow control valve at the upstream end of the line from the evaporation chamber to the CVD chamber.
  • Different sets of values are provided for choked and u ⁇ choked flow. Choked flow occurs when the flow through the orifice in the tube reaches a point where it is no longer dependent on the pressure downstream, but only the pressure upstream of the orifice. Unchoked flow is dependent on the ratio of the outlet pressure to the inlet pressure.
  • the controller determines the characteristics of the flow and provides the appropriate multiplier for the control signal to the control valve at the inlet side of the tube.
  • the figure diagrammaticaily illustrates a chemical vapor deposition (CVD) system 10 that includes a CVD reactor 11 and a precursor delivery system 12, 0/65127
  • CVD chemical vapor deposition
  • a reaction is carried out to convert a precursor vapor of, for example, tantalum chloride or other tantalum halide compound, into a film such as, for example, a barrier layer film of tantalum or tantalum nitride.
  • the precursor delivery system 12 is made up of a source 13 of precursor vapor and a metering system 15.
  • the source 13 has an outlet 14, which connects to the metering system 15, which in turn is connected to a reactant gas inlet 16 of the CVD reactor 11.
  • the source 13 is configured to supply a precursor vapor, for example a tantalum halide vapor, from a solid or liquid tantalum halide compound, at a rate that is sufficient to support the CVD reaction in the chamber 11.
  • the compound is one that is in a solid state when at standard temperature and pressure.
  • the precursor in the source is maintained at a controlled temperature that will produce a desired vapor pressure of the precursor at the outlet 14 of the source 13 where it connects to the metering system 15.
  • the vapor pressure of the precursor itself is sufficient to allow the metering system 15 to deliver the precursor vapor to the reactor 11 at a desired flow rate without the use of a carrier gas.
  • the metering system 15 maintains a flow of the precursor vapor from the source 13 into the reactor 11 at a rate that is sufficient to maintain a commercially viable CVD process in the reactor 11.
  • the reactor 11 is a generally conventional CVD reactor and includes a vacuum chamber 20 that is bounded by a vacuum tight chamber wall 21.
  • a substrate support or susceptor 22 on which a substrate 0/65127
  • a preferred pressure range for the CVD reactor 11 is in the range of from 0.2 to 5.0 Torr, preferably in the range of from 1 to 2 Torr.
  • the vacuum is maintained by controlled operation of a vacuum pump 24 and of inlet gas sources 25 that may include, for example, an inert gas source 27 for a gas such as argon (Ar) or helium (He) and one or more reducing gas sources 26 of, for example, hydrogen (H 2 ), nitrogen (N 2 ), or ammonia (NH 3 ), for use in carrying out a metal halide reduction reaction, such as a reaction to deposit Ta or TaN or TiN, for example.
  • the gases from the sources 25 enter the chamber 20 through a showerhead 28 that is situated at one end of the chamber 20 opposite the substrate 23, generally parallel to and facing the substrate 23.
  • the precursor gas source 13 includes a sealed evaporator 30 having therein an evaporation vessel 31 , which is preferably in the shape of a cylinder having a vertically oriented axis of symmetry 32.
  • the vessel 31 has a cylindrical inner wall 33 formed of a high temperature tolerant and non-corrosive material such as the alloy INCONEL 600.
  • the inside surface 34 of the wall 33 is highly polished and smooth.
  • the wall 33 has a flat circular closed bottom 35 and an open top, which is sealed by a cover 36 of the same heat tolerant and non- corrosive material as the wall 33.
  • the outlet 14 of the source 13 is situated in the cover 36.
  • the cover 36 is sealed to a flange ring 37 that is integral to the top of the wall 33 by a vacuum tight seal 38.
  • the seal 38 is preferably a high - 10 - temperature tolerant vacuum compatible seal material such as HELICOFLEX, which is formed of a C-shaped nickel tube surrounding an INCONEL coil spring.
  • HELICOFLEX high - 10 - temperature tolerant vacuum compatible seal material
  • a conventional elastomeric O-ring may be used to seel the cover 36 to the flange ring 37.
  • a source 39 of a carrier gas or purge gas which is preferably an inert gas such as helium or argon.
  • the source 13 includes a mass of precursor material such as tantalum fluoride, tantalum chloride or tantalum bromide (TaX) contained in and situated at the bottom of the vessel 31 , which is loaded into the vessel 31 at standard temperature and pressure in a solid state.
  • the vessel 31 is filled with tantalum halide vapor by placing the solid mass of TaX in the vessel 31 and sealing the cover 36 to the top of the vessel wall 33, then heating the wall 33 of the vessel 31 to raise the temperature of the TaX compound sufficiently high to achieve a desired TaX vapor pressure in vessel 3 .
  • the precursor halide is supplied as a precursor mass 40 that is placed at the bottom of the vessel 31 , where it is heated, preferably to a liquid state as long as the resulting vapor pressure is in an acceptable range.
  • Purge gas and TaX vapors are, however, first evacuated from the vessel 31 with a vacuum pump 41 , which is connected through the cover 36, so that only TaX vapor from the TaX mass 40 remains in the vessel 31.
  • the mass 40 is liquid, the vapor lies above the level of the liquid mass 40. Because wall 33 is a vertical cylinder, the surface area of TaX mass 40, if a liquid, remains constant regardless of the extent of depletion of the TaX.
  • the delivery system 12 is not limited to direct delivery of a precursor 40 but can be used in the alternative for delivery of precursor 40 along with a carrier gas, which can be introduced into the vessel 31 from gas source 39.
  • a gas may be hydrogen (H 2 ) or an inert gas such as helium (He) or argon (Ar).
  • a carrier gas it may be introduced into the vessel 31 so as to distribute across the top surface of the precursor mass 40 or may be introduced into the vessel 31 so as to percolate through the mass 40 from the bottom 35 of the vessel 31 with upward diffusion in order to achieve maximum surface area exposure of the mass 40 to the carrier gas.
  • a carrier gas may be introduced into the vessel 31 so as to distribute across the top surface of the precursor mass 40 or may be introduced into the vessel 31 so as to percolate through the mass 40 from the bottom 35 of the vessel 31 with upward diffusion in order to achieve maximum surface area exposure of the mass 40 to the carrier gas.
  • Yet another alternative is to vaporize a liquid that is in the vessel 31.
  • such alternatives add undes
  • the carrier gas be introduced into tube 50 near its outlet end, from a source 87 connected downstream of the downstream pressure sensor 57 of the metering system 15 so that it does not interfere with the accurate flow rate delivery of direct precursor delivery that is preferred with the system 10.
  • the bottom 35 of the wall 33 is in thermal communication with a heater 44, which maintains the precursor 40 at a controlled temperature, preferably above its melting point, at such a temperature that will produce a vapor pressure in the approximate range of at least about 3 Torr. preferably in the range of from about - 12 -
  • a preferred vapor pressure can be maintained of at least 5 Torr by heating the a tantalum halide precursor in the 95°C to 205°C range, depending on the tantalum halide compound being used.
  • the desired temperatures are as follows: at least about 95°C for TaF 5 ; at least about 145°C for TaCI 5 ; and at least about 205°C for TaBr 5 .
  • the melting points of the respective fluoride, chloride and bromide of tantalum are in the 97°C to 265°C range. A much higher temperature is required for tantalum pentaiodide (Tal s ) to produce a sufficient vapor pressure in the vessel 31. In any event, temperatures should not be so high as to cause premature reaction of the precursor vapor with reducing gases in a mixing chamber within the showerhead 28 or elsewhere before contacting the wafer 23.
  • a temperature of 180°C is assumed to be the control temperature for the heating of the bottom 35 of the vessel 31.
  • This temperature is appropriate for producing a desired vapor pressure with a titanium tetraiodide (Til 4 ) precursor.
  • Ti 4 titanium tetraiodide
  • the cover 36 is maintained at a higher temperature than the heater 44 at the bottom 35 of the wall 33 of, for example, 190°C, by a separately controlled a heater 45 that is in thermal contact with the 0/65127
  • the temperature in the vessel 31 should be kept below the temperature at which TaX gas disassociates to form Ta + and X " atoms.
  • the sides of the vessel wall 33 are surrounded by an annular trapped air space 46, which is contained between the vessel wall 33 and a surrounding concentric outer aluminum wall or can 47.
  • the can 47 is further surrounded by an annular layer of silicone foam insulation 48.
  • This temperature maintaining arrangement keeps the vapor in a volume of the vessel bounded by the cover 36, the sides of the walls 33 and the surface 42 of the precursor mass 40 in temperature range of between 180°C and 190°C and at a pressure of at least about 3 Torr, preferably at least about 5 Torr.
  • the temperature that is appropriate to maintain the desired pressure will vary with the precursor material, which is primarily contemplated as a being tantalum halide or titanium halide compound. Vapors from other precursors that are solid at room temperature but have low vapor pressures can be similarly delivered.
  • the vapor flow metering system 15 includes a delivery tube 50 of at least
  • the tube 50 extends from the precursor gas source 13, to which it connects at its upstream end to the outlet 14, to the reactor 11 to which it connects at its downstream end to the inlet 16.
  • the entire length of the tube from the evaporator outlet 14 to the reactor inlet 16 and the showerhead 28 of the reactor chamber 20 is also preferably heated to above the evaporation 00/65127
  • the precursor is
  • a baffle plate 51 in which is centered a circular orifice 52, which preferably has a diameter of approximately 0.089 inches.
  • a variable orifice control valve 53 is provided in the tube 50 between the baffle 51 and the precursor gas source outlet 14 to control the pressure in the tube 50 upstream of the baffle 51 and thereby control the flow rate of precursor gas through the orifice 52 and the tube 50 to the inlet 16 of the reactor 11.
  • a shut-off valve 54 is provided in the line 50 between the outlet 14 of the evaporator 13 and the control valve 53 to close the vessel 31 of the evaporator 13.
  • Pressure sensors 55-58 are provided in the system 10 to provide information to a controller 60 for use in controlling the system 10, including controlling the flow rate of precursor gas from the delivery system 15 into the chamber 20 of the CVD reactor 11.
  • the pressure sensors include sensor 55 connected to the tube 50 between the outlet 14 of the evaporator 13 and the shut-off valve 54 to monitor the pressure in the evaporation chamber 31.
  • a pressure sensor 56 is connected to the tube 50 between the control valve 53 and the baffle 51 to monitor the pressure upstream of the orifice 52, while a pressure sensor 57 is connected to the tube 50 between the baffle 51 and the reactor inlet 16 to monitor the pressure downstream of the orifice 52.
  • a further pressure sensor 58 is connected to the chamber 20 of the reactor 11 to monitor the - 15 - pressure in the CVD chamber 20.
  • the control valve 53 is operative to affect a pressure drop from the control valve 53, through the orifice 52 and into the reaction chamber 11 that can be varied above about 10 milliTorr and to produce a flow rate of precursor into the chamber 11 that is proportional to this controlled pressure drop.
  • Control of the flow of precursor vapor into the CVD chamber 20 of the reactor 11 is achieved by the controller 60 in response to the pressures sensed by the sensors 55-58, particularly the sensors 56 and 57 which determine the pressure drop across the orifice 52.
  • the actual flow of precursor vapor through the tube 52 is a function of the pressures monitored by pressure sensors 56 and 57, and can be determined from the ratio of a) the pressure measured by sensor 56, on the upstream side of the orifice 52, to b) the pressure measured by sensor 57, on the downstream side of the orifice 52.
  • the actual flow of precursor vapor through the tube 52 is a function of only the pressure monitored by upstream pressure sensor 57.
  • the existence of choked or unchoked flow can be determined by the controller 60 by interpreting the process conditions.
  • the flow rate of precursor gas can then be determined by the controller 60 through calculation.
  • accurate determination of the actual flow rate of precursor gas is calculated by retrieving flow rate data from lookup or multiplier tables stored in a non-volatile memory 61 accessible by the controller 60.
  • the desired flow rate can be maintained by a closed loop feedback control of one or more of the variable orifice control valve 53, the CVD chamber pressure through evacuation pump 24 or control of reducing or inert gases from sources 26 and 27, or by control of the temperature and vapor pressure of the precursor gas in chamber 31 by control of heaters 44 and 45.
  • the lookup tables in the memory 61 are set up by a calibration process in which a test cylinder or container of a known volume comparable to that of the reaction chamber 11 is connected downstream of the metering system 15 and set to the approximate pressure and temperature parameter ranges of that will be used during processing in the reaction chamber 11. Then, the delivery system 12 is operated to cause flow of the precursor gas into the test cylinder under the same parameters to be used for actual CVD processing. The pressure rise in the test cylinder is measured at various time intervals and the 00/651

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un réacteur de DCPV (11) pourvu d'un système de distribution de précurseur (12) doté d'un récipient (31) d'évaporation dans lequel on convertit un précurseur solide de masse moléculaire élevée en vapeur en le chauffant à une pression de vapeur d'au moins 3 Torr. Le récipient (31) est relié à la chambre de réacteur DCPV (11) par un tube (50) d'un diamètre relativement grand doté d'un orifice (52) de petit diamètre. Le régulateur (60) surveille la pression en amont et en aval de l'orifice (52) et commande le dispositif de régulation du débit en amont du tube de l'orifice (52) afin de produire le débit voulu de la vapeur de précurseur à l'intérieur du réacteur DCPV (11). Ledit débit est régulé suivant à un algorithme de débits standard modifié par des facteurs tirés de la table d'étalonnage de débits de référence en réponse à des mesures de pression effectuées dans le tube (50).
PCT/US2000/011201 1999-04-27 2000-04-26 Appareil et procede de distribution de vapeur a une chambre de depot chimique en phase vapeur WO2000065127A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30066999A 1999-04-27 1999-04-27
US09/300,669 1999-04-27

Publications (1)

Publication Number Publication Date
WO2000065127A1 true WO2000065127A1 (fr) 2000-11-02

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1870490A2 (fr) * 2006-06-19 2007-12-26 Sumitomo Electric Industries, Ltd. Dispositif évaporateur d'une installation de dépôt chimique en phase vapeur et regulateur de debit de gaz.
US7828274B2 (en) 2002-07-23 2010-11-09 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US8821640B2 (en) 2006-08-31 2014-09-02 Advanced Technology Materials, Inc. Solid precursor-based delivery of fluid utilizing controlled solids morphology
US10385452B2 (en) 2012-05-31 2019-08-20 Entegris, Inc. Source reagent-based delivery of fluid with high material flux for batch deposition
CN113913755A (zh) * 2021-10-12 2022-01-11 中国科学技术大学 薄膜制备系统
US20220356581A1 (en) * 2019-09-24 2022-11-10 Tokyo Electron Limited Gas supply device and gas supply method
CN115389096A (zh) * 2022-08-26 2022-11-25 江苏微导纳米科技股份有限公司 气体压力探测装置及沉积设备

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US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
EP0390127A2 (fr) * 1989-03-29 1990-10-03 Stec Inc. Procédé et appareillage pour la vaporisation et l'alimentation de composés organométalliques

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EP0193419A1 (fr) * 1985-01-22 1986-09-03 Fairchild Semiconductor Corporation Procédé et dispositif pour le dépôt chimique à partir de la phase vapeur à basse pression
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
EP0390127A2 (fr) * 1989-03-29 1990-10-03 Stec Inc. Procédé et appareillage pour la vaporisation et l'alimentation de composés organométalliques

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Title
SULLIVAN J J ET AL: "MASS FLOW MEASUREMENT AND CONTROL OF LOW VAPOR PRESSURE SOURCES", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 7, no. 3, PART 02, 1 May 1989 (1989-05-01), pages 2387 - 2392, XP000430862, ISSN: 0734-2101 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9004462B2 (en) 2002-07-23 2015-04-14 Entegris, Inc. Method and apparatus to help promote contact of gas with vaporized material
US9469898B2 (en) 2002-07-23 2016-10-18 Entegris, Inc. Method and apparatus to help promote contact of gas with vaporized material
US7828274B2 (en) 2002-07-23 2010-11-09 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US8128073B2 (en) 2002-07-23 2012-03-06 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US8444120B2 (en) 2002-07-23 2013-05-21 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US10465286B2 (en) 2002-07-23 2019-11-05 Entegris, Inc. Method and apparatus to help promote contact of gas with vaporized material
EP1870490A3 (fr) * 2006-06-19 2008-09-24 Sumitomo Electric Industries, Ltd. Dispositif évaporateur d'une installation de dépôt chimique en phase vapeur et regulateur de debit de gaz.
EP1870490A2 (fr) * 2006-06-19 2007-12-26 Sumitomo Electric Industries, Ltd. Dispositif évaporateur d'une installation de dépôt chimique en phase vapeur et regulateur de debit de gaz.
US10895010B2 (en) 2006-08-31 2021-01-19 Entegris, Inc. Solid precursor-based delivery of fluid utilizing controlled solids morphology
US8821640B2 (en) 2006-08-31 2014-09-02 Advanced Technology Materials, Inc. Solid precursor-based delivery of fluid utilizing controlled solids morphology
US10385452B2 (en) 2012-05-31 2019-08-20 Entegris, Inc. Source reagent-based delivery of fluid with high material flux for batch deposition
US20220356581A1 (en) * 2019-09-24 2022-11-10 Tokyo Electron Limited Gas supply device and gas supply method
CN113913755A (zh) * 2021-10-12 2022-01-11 中国科学技术大学 薄膜制备系统
CN113913755B (zh) * 2021-10-12 2022-11-18 中国科学技术大学 薄膜制备系统
CN115389096A (zh) * 2022-08-26 2022-11-25 江苏微导纳米科技股份有限公司 气体压力探测装置及沉积设备

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