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WO2000059084A3 - Structures a semi-conducteurs utilisant un complexe quaternaire nitrure groupe iii a separation de phases reduite et procede de fabrication - Google Patents

Structures a semi-conducteurs utilisant un complexe quaternaire nitrure groupe iii a separation de phases reduite et procede de fabrication Download PDF

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Publication number
WO2000059084A3
WO2000059084A3 PCT/IB2000/000565 IB0000565W WO0059084A3 WO 2000059084 A3 WO2000059084 A3 WO 2000059084A3 IB 0000565 W IB0000565 W IB 0000565W WO 0059084 A3 WO0059084 A3 WO 0059084A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase separation
group iii
material system
fabrication
quaternary material
Prior art date
Application number
PCT/IB2000/000565
Other languages
English (en)
Other versions
WO2000059084A2 (fr
Inventor
Takayama Toru
Baba Takaaki
James S Harris Jr
Original Assignee
Matsushita Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Corp filed Critical Matsushita Electric Corp
Priority to EP00920965A priority Critical patent/EP1166410A2/fr
Priority to JP2000608483A priority patent/JP4505147B2/ja
Priority to CN00805557.2A priority patent/CN1345474B/zh
Publication of WO2000059084A2 publication Critical patent/WO2000059084A2/fr
Publication of WO2000059084A3 publication Critical patent/WO2000059084A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

Cette invention a trait à un complexe quaternaire nitrure du groupe III et au procédé afférent, ce complexe étant utilisé dans des structures à semi-conducteurs, notamment dans des diodes laser, des transistors et des photodétecteurs, et permettant de réduire ou d'éliminer la séparation de phases tout en augmentant l'efficacité de l'émission. Dans une réalisation donnée à titre d'exemple, cette structure à semi-conducteurs comporte une première couche InGaAIN, d'un premier type de conduction, formée quasiment sans séparation de phases, une couche active InGaAIN quasiment sans séparation de phases et une troisième couche InGaAIN, d'un type de conduction opposé, formée quasiment sans séparation de phases.
PCT/IB2000/000565 1999-03-26 2000-03-01 Structures a semi-conducteurs utilisant un complexe quaternaire nitrure groupe iii a separation de phases reduite et procede de fabrication WO2000059084A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP00920965A EP1166410A2 (fr) 1999-03-26 2000-03-01 Structures a semi-conducteurs utilisant un complexe quaternaire nitrure groupe iii a separation de phases reduite et procede de fabrication
JP2000608483A JP4505147B2 (ja) 1999-03-26 2000-03-01 相分離の少ないｉｉｉ族窒化物４元材料系を用いた半導体構造体および加工方法
CN00805557.2A CN1345474B (zh) 1999-03-26 2000-03-01 具有减少相分离、利用第三族氮化物四元金属体系的光发射装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/276,886 1999-03-26
US09/276,886 US6521917B1 (en) 1999-03-26 1999-03-26 Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation

Publications (2)

Publication Number Publication Date
WO2000059084A2 WO2000059084A2 (fr) 2000-10-05
WO2000059084A3 true WO2000059084A3 (fr) 2001-02-08

Family

ID=23058493

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/000565 WO2000059084A2 (fr) 1999-03-26 2000-03-01 Structures a semi-conducteurs utilisant un complexe quaternaire nitrure groupe iii a separation de phases reduite et procede de fabrication

Country Status (5)

Country Link
US (1) US6521917B1 (fr)
EP (1) EP1166410A2 (fr)
JP (1) JP4505147B2 (fr)
CN (1) CN1345474B (fr)
WO (1) WO2000059084A2 (fr)

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US6903364B1 (en) * 1999-03-26 2005-06-07 Matsushita Electric Industrial Co., Ltd. Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
JP2003514402A (ja) * 1999-11-16 2003-04-15 松下電子工業株式会社 相分離が抑制されたｉｉｉ族窒化物材料系を用いた半導体構造及び製造方法
JP3726252B2 (ja) * 2000-02-23 2005-12-14 独立行政法人理化学研究所 紫外発光素子およびＩｎＡｌＧａＮ発光層の製造方法
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
TW546855B (en) * 2001-06-07 2003-08-11 Sumitomo Chemical Co Group 3-5 compound semiconductor and light emitting diode
US7015515B2 (en) * 2001-06-08 2006-03-21 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device having a superlattice structure
CA2456662A1 (fr) * 2001-08-07 2003-02-20 Jan Kuzmik Dispositifs a haute mobilite d'electrons
EP1353384A3 (fr) * 2002-04-10 2005-01-12 Hitachi, Ltd. Transistor bipolaire à hétérojonction, procédé pour sa fabrication et module amplificateur
CN1324772C (zh) * 2002-06-19 2007-07-04 日本电信电话株式会社 半导体发光器件
US7859008B2 (en) * 2002-12-27 2010-12-28 Momentive Performance Materials Inc. Crystalline composition, wafer, device, and associated method
US7786503B2 (en) * 2002-12-27 2010-08-31 Momentive Performance Materials Inc. Gallium nitride crystals and wafers and method of making
US8357945B2 (en) * 2002-12-27 2013-01-22 Momentive Performance Materials Inc. Gallium nitride crystal and method of making same
US9279193B2 (en) 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
US7638815B2 (en) * 2002-12-27 2009-12-29 Momentive Performance Materials Inc. Crystalline composition, wafer, and semi-conductor structure
US20050211291A1 (en) * 2004-03-23 2005-09-29 The Boeing Company Solar cell assembly
US6989555B2 (en) * 2004-04-21 2006-01-24 Lumileds Lighting U.S., Llc Strain-controlled III-nitride light emitting device
CN100435359C (zh) * 2004-10-10 2008-11-19 晶元光电股份有限公司 半导体发光元件及其制造方法
US20060203871A1 (en) * 2005-03-10 2006-09-14 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor light emitting device and fabrication method thereof
US8130806B2 (en) * 2005-06-22 2012-03-06 Binoptics Corporation AlGaInN-based lasers produced using etched facet technology
US7494546B1 (en) * 2006-07-14 2009-02-24 Blue Wave Semicodnuctors, Inc. Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices
CN101295758B (zh) 2007-04-29 2013-03-06 晶能光电（江西）有限公司 含有碳基衬底的铟镓铝氮发光器件以及其制造方法
KR101324303B1 (ko) * 2008-08-28 2013-10-30 소이텍 클로라이드 가스 흐름의 ｕｖ 흡수기반의 모니터 및 제어
JP5843238B2 (ja) * 2010-02-24 2016-01-13 国立研究開発法人理化学研究所 窒化物半導体多重量子障壁を有する発光素子及びその製造方法
JP2015073073A (ja) * 2013-09-06 2015-04-16 三菱電機株式会社 半導体装置およびその製造方法
RU169284U1 (ru) * 2016-11-15 2017-03-14 Федеральное государственное бюджетное учреждение науки Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук Гетероструктурный полевой транзистор
CN107195709B (zh) * 2017-05-19 2019-06-11 中山大学 一种三族氮化物基异质结光电晶体管

Citations (5)

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EP0742622A2 (fr) * 1995-03-27 1996-11-13 Mitsubishi Cable Industries, Ltd. Diode laser
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device

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JPH06152072A (ja) * 1992-11-16 1994-05-31 Asahi Chem Ind Co Ltd 半導体レーザ
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JPH08203862A (ja) * 1995-01-27 1996-08-09 Matsushita Electric Ind Co Ltd 窒化物系化合物半導体のエッチング方法
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Patent Citations (5)

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EP0742622A2 (fr) * 1995-03-27 1996-11-13 Mitsubishi Cable Industries, Ltd. Diode laser
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures

Non-Patent Citations (3)

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Title
MATSUOKA T: "Phase separation in wurtzite In/sub 1-x-y/Ga/sub x/Al/sub y/N", MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1998, MATER. RES. SOC, USA, vol. 3, no. 54, XP002149866, ISSN: 1092-5783 *
MCINTOSH F G ET AL: "GROWTH AND CHARACTERIZATION OF ALLNGAN QUATERNARY ALLOYS", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 68, no. 1, 1996, pages 40 - 42, XP000548792, ISSN: 0003-6951 *
PINER E L ET AL: "Growth and properties of InGaN and AlInGaN thin films on (0001) sapphire", MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1996, MATER. RES. SOC, UK, vol. 1, no. 43, XP002149863, ISSN: 1092-5783 *

Also Published As

Publication number Publication date
CN1345474A (zh) 2002-04-17
CN1345474B (zh) 2012-11-14
EP1166410A2 (fr) 2002-01-02
JP4505147B2 (ja) 2010-07-21
JP2002540638A (ja) 2002-11-26
US6521917B1 (en) 2003-02-18
WO2000059084A2 (fr) 2000-10-05

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