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WO1999036587A1 - Dispositif et procede de traitement vertical active par plasma - Google Patents

Dispositif et procede de traitement vertical active par plasma Download PDF

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Publication number
WO1999036587A1
WO1999036587A1 PCT/US1999/000706 US9900706W WO9936587A1 WO 1999036587 A1 WO1999036587 A1 WO 1999036587A1 US 9900706 W US9900706 W US 9900706W WO 9936587 A1 WO9936587 A1 WO 9936587A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
wafers
wafer boat
wafer
boat
Prior art date
Application number
PCT/US1999/000706
Other languages
English (en)
Inventor
Robert C. Cook
Daniel L. Brors
Original Assignee
Torrex Equipment Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Torrex Equipment Corporation filed Critical Torrex Equipment Corporation
Publication of WO1999036587A1 publication Critical patent/WO1999036587A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

  • the present invention relates generally to methods and apparatus for plasma enhanced chemical vapor deposition (PECVD) on wafers and plasma enhanced etching of wafers, and more particularly to a method and apparatus for transmitting RF energy to create a localized glow discharge over surfaces of wafers stacked vertically on a rotating wafer boat, and apparatus for robotically inserting and removing the wafers.
  • PECVD plasma enhanced chemical vapor deposition
  • FIG. 1 shows a chamber 10 having a rotating susceptor 12 capable of holding a plurality of substrates.
  • RF energy is applied to an upper electrode 14 to create an electric field causing a plasma (glow discharge) creating free electrons within the plasma region 16.
  • the electrons gain sufficient energy from the electric field so that when they collide with gas molecules, gas-phase dissociation and io ization of the reactant gases (e.g. silane and nitrogen) occurs.
  • the reactant gases e.g. silane and nitrogen
  • FIG 2 shows another prior art device including a single wafer PECVD chamber 18 wherein a wafer 20 is held stationary.
  • a single wafer PECVD chamber design available in the marketplace.
  • multiple wafer chambers as described above wherein the wafers are all supported by a susceptor in a single horizontal plane.
  • the single wafer and horizontal multiple wafer PECVD chamber designs discussed above are problematic for numerous reasons. First, such single wafer designs suffer from relatively low throughput as only one wafer at a time can be processed. Further, the multiple wafer horizontal designs pose extreme difficulties in connection with the incorporation of automatic robotic wafer loading and unloading. Also, horizontal multiple wafer designs can process only a limited number of wafers before the chamber becomes so large in area as to become very difficult to maintain the necessary plasma uniformity and necessary gas flow control.
  • a preferred embodiment of the present invention includes a plasma enhanced chemical vapor deposition (PECVD) system having an upper chamber for performing a plasma enhanced process, and a lower chamber having an access port for loading and unloading wafers to and from a wafer boat.
  • the system includes apparatus for moving the wafer boat from the upper chamber to the lower chamber.
  • the wafer boat includes susceptors for suspending wafers horizontally, spaced apart in a vertical stack.
  • An RF plate is positioned in the boat above each wafer for generating an enhanced plasma.
  • a novel RF connection is provided, allowing the RF energy to be transmitted to the RF plates while the wafer boats are rotated.
  • apparatus for automatic wafer loading and unloading is provided, including apparatus for lifting each wafer from its supporting susceptor, and a robotic arm for unloading and loading the wafers.
  • Fig. 1 shows a prior art rotating susceptor chamber
  • Fig. 2 is a prior art chamber with a stationary wafer
  • Fig. 3 illustrates a preferred embodiment of the present invention
  • Fig. 4 is a top cross-sectional view of the upper chamber of the reactor of Fig. 3
  • Fig. 5 shows a vertical cross-sectional view of the upper chamber
  • Fig. 6 shows an alternate construction of an upper chamber constructed in the form of a bell jar
  • Fig. 7 is an enlargened section C from Fig. 3 showing detail of the rotating RF input assembly
  • Fig. 8 is a further enlargement of section D of Fig. 7, clarifying the detail of the rotating RF connection
  • Fig. 1 shows a prior art rotating susceptor chamber
  • Fig. 2 is a prior art chamber with a stationary wafer
  • Fig. 3 illustrates a preferred embodiment of the present invention
  • Fig. 4 is a top cross-sectional view of the upper chamber of the reactor of Fig
  • FIG. 16 shows details of lifting wafers off of their susceptors for an embodiment wherein RF energy is applied to plates above the wafers;
  • Fig. 17 shows details of lifting wafers off of their susceptors for an embodiment wherein RF energy is applied to the susceptors;
  • Fig. 18 shows the boat in the fully down position;
  • Fig. 19 shows a top view of the boat showing a wafer being loaded on pins using a robotic arm;
  • Fig. 20 is an enlargened view of section I of Fig. 3 showing further detail of the vertical motion mechanism.
  • An enclosure 24 has an upper chamber 26 and a lower chamber 28.
  • the upper chamber has an optional radiant top heater 30, and optional side heaters 32, for use when the process requires temperatures above room temperature.
  • a bottom heater (not shown) can also be attached, for example to plate 34 as described in U.S. Patent Application Serial No. 08/909,461 entitled Mini- Batch Process Chamber, the contents of which are included herein by reference.
  • the wafer boat 36 includes susceptors for holding wafers horizontally, in a stacked, spaced apart array.
  • the boat 36 includes a RF plate positioned above each wafer, for causing a glow discharge creating an enhanced plasma above each wafer.
  • the wafer boat in cooperation with other chamber system 22 apparatus, includes apparatus for automatically lifting each wafer from its susceptor for loading and unloading by a robotic arm when the boat is lowered into the lower chamber 28.
  • the boat 36 is supported on a rotatable shaft structure 38, rotated by a rotation mechanism 40.
  • the RF energy is transmitted to the RF plate by way of a transmission line through the shaft structure.
  • RF refers to all types of RF power, including dual frequency RF and pulsed RF.
  • the transmission line is coupled to an RF connector 42 by way of a rotating contact joint 44.
  • the rotating contact 44 allows the RF energy to be transmitted while the boat 36 is rotated, a novel feature providing more uniform processing over a wafer surface.
  • the vertical motion of the shaft 38 and boat 36 is accompanied by a lift mechanism 46. Further details of the rotation mechanism 40 and lift mechanism 46 are included in U.S. Pat Serial No. 08/090,461.
  • a seal plate 48 prevents reactant gases from the upper chamber from passing into the lower chamber 28 during processing, and thereby minimizing unwanted deposition of material in the lower chamber. In order to assure minimal transfer of reactant gas from the upper chamber 26 to the lower chamber 28, an inert gas at a low level positive pressure is injected into the lower chamber 28.
  • FIG. 4 is a top cross section of the upper chamber 26, showing six side heater assemblies 32. In operation, wafers 50 are rotated while gases enter the chamber 26 via a gas injection manifold 52 and are exhausted on the other side via an exhaust manifold 54.
  • Figure 5 is a vertically cross sectioned view of the upper chamber 26 showing further detail of the tunable gas injection manifold 52 and the opposing tunable exhaust manifold 54 with the rotating wafer boat 36 in between.
  • Figure 6 shows an alternate construction 56 for the upper chamber 26 of Fig. 3, where the upper portion is a simple bell jar 58 made of suitable material such as quartz or silicon carbide. Gas injection is accomplished via inlet tubes 60 and exhausted via exhaust tubes 62. Optional radiant heaters or resistive heating elements can be arranged about the upper chamber 56 for processes above room temperature.
  • Figure 7 shows the rotating RF input assembly 44 where the RF energy is introduced via connector 64 to a stationary bottom RF disk 66. The RF is coupled to a lower RF shaft 68 via a metal thrust bearing 70.
  • FIG. 8 is a section D blow up of the RF input assembly 44 showing an RF connector 64 which makes contact to a threaded rod 76 which in turn is threaded into the stationary bottom RF disk 78.
  • the threaded rod 76 is surrounded by an insulating tube 82 made from suitable insulating material such as ceramic or plastic.
  • an insulating disk 84 supports the bottom of RF disk 78 and an insulating tube 86 electrically isolates the sidewalls of RF disk 78.
  • the RF energy passes through a metal thrust bearing 88 first via bottom race 90, then through the rotating balls 92 and finally to the upper race 94 which is in contact with bottom RF shaft 68.
  • the bottom RF shaft 68 is secured via insulating clamp ring 96 and bolts 98 to the bottom bellows disk 100 which has bellows 102 welded to its upper surface.
  • a metal tube 104 which is a ground potential surrounds the bottom RF shaft 68 and is held in place via tube clamp 106 made from insulating material such as Delrin. To prevent electrical contact to the bottom RF shaft 68, the bottom of metal tube 104 is isolated via insulating ring 108.
  • O-ring 110 in conjunction with metal washer 112 forms the vacuum seal between the metal tube 104 and the bottom bellows disk 100.
  • O-ring 112 forms the internal vacuum seal between the bottom RF shaft 68 and the metal tube 104.
  • This O-ring 112 also aligns the bottom RF shaft 68 to be parallel to the metal tube 104 and at the same time provides a small gap of about 0.05" in between which prevents electrical contact and acts as a "dark space" which precludes the occurrence of a glow discharge or plasma within the gap.
  • Figure 9, section E of Fig. 7, shows the upper portion of bottom RF shaft 68.
  • An O-ring 114 further maintains the parallelism and the dark space gap between the bottom RF shaft 68 and the metal tube 104.
  • the upper RF shaft 72 is connected to the lower RF shaft 68 via wazzu threaded rod 74.
  • the space between the upper RF shaft 72 and the metal tube 104 is filled with insulating material to prevent the occurrence of a plasma.
  • the insulating material is in the form of three concentric standard size quartz tubes 116.
  • the upper end of bellows 118 is welded to an upper bellows disk 120 and vacuum sealed to an outer rotation tube 122 via O-ring 124.
  • two or three rods 126 engage into holes 128 drilled into upper bellows disk 120 so that the rotational force is transmitted via the rods 126 to prevent contortion of the bellows 118.
  • Pulley 128 is affixed to the outer rotation tube 122 and drive belt 130 goes to a pulley on the rotation motor.
  • Outer rotation tube 122 passes through a ferrofluidic rotary vacuum seal 132 and is held in place via tube clamp 134.
  • the ferrofluidic seal 132 is itself vacuum sealed to the feedthrough flange 136 via O-ring 138.
  • the feedthrough flange 136 is sealed to the chamber bottom plate 138 via O-ring 140.
  • a fitting 142 leads to hole 144 so that inert gas may be injected to prevent process gases from entering the space between the metal tube 104 and the bottom plate 138 and the feedthrough flange 136.
  • FIG. 10 shows the wafer boat 36, wherein the upper end of metal tube 104 is connected to a boat bottom plate 146 via slitted flange 148 and secured in place to flange 148 via clamp ring 150.
  • Upper RF shaft 72 is connected to the bottom RF plate 152 via threaded rod 154.
  • a section F is shown in Fig. 11, enlarged for a more clear illustration of the following detail.
  • insulating tube 156 made from ceramic or other suitable material is inserted between the boat bottom plate 146 and the threaded rod 154. Further isolation between the boat bottom plate 146 and the bottom RF plate 152 is provided by insulating disk 158.
  • a second insulating disk 160 is sandwiched between the bottom RF plate 152, and a metal disk 162.
  • Fig. 12 is an enlargement of the structure of section G of Fig. 10.
  • the wafer boat 36 is configured so that wafers 164 are at ground potential or electrically floating.
  • the plasma is generated above the wafers 164 via RF plates 166.
  • Wafer susceptors 168 are held in place via threaded rod 170 and conductive spacers 172, 174, and 176 made from suitable material such as metal or graphite. In the event that the wafer susceptors 168 are made of conductive material, the wafers 164 will be at ground potential.
  • the wafer susceptors 168 are made from insulating material, the wafers 164 will be floating.
  • the rods 170 are threaded into the boat bottom plate 178 and metal band 180 surrounds the bottom RF plate 152 with insulating disks 158 and 160 holding the band slightly away from the bottom RF plate 152 to form a dark space gap 182.
  • Outer metal band 184 provides further structural support.
  • the RF energy is transmitted up from the bottom RF plate 152 via threaded rod 186 which contacts the RF plates 166 via nuts 188.
  • insulating tubes 190 surround the threaded rod 186.
  • the insulating tubes 190 are in turn surrounded by conductive tubes 192 which connect to ground potential via conductive shield disks 194 and conductive spacers 174 and 176 and the threaded rod 170.
  • Figure 13 is an enlargened view of Section H of Fig. 10, showing the upper right- hand portion of boat 36.
  • insulating washers 196 are placed between them and insulating tubes 198 surround the nuts 188.
  • the conductive shield disks 194 are shaped along their inside diameters to capture the insulating tubes 198 and come to within a dark space distance to the RF plates 166.
  • a conductive band 200 which is connected to ground potential via conductive shield disks 194, is positioned around the entire periphery of RF plates 166.
  • Insulating plates 202 are positioned on top of RF plates 166 to prevent the occurrence of plasma above the RF plates 166.
  • grounded lift plates 204 rest upon the insulating plates 202. The lift plates 204 function to lift the wafer during robotic loading and unloading as further described later herein.
  • the uppermost insulating plate 202 has a grounded conductive disk 206 resting on top of it.
  • FIG. 14 is an enlargened view of section G of Fig.
  • insulating disk 218 which rests upon grounded conductive disk 220 and which has through holes drilled therein to capture nuts 188.
  • the thickness of insulating disk 218 is such to allow only a small dark space gap 222 between the grounded conductive disk 220 and the nut 188.
  • Insulating washers 224 have a thickness of approximately 0.04" to 0.07" and hold the dark space grounded disks 226 above the susceptor to leave a small enough gap 228 as to preclude a plasma from occurring in this region.
  • Surrounding the periphery of susceptor 168 is a grounded conductive band 230 with spacing 232 in between such as to preclude a plasma around the periphery of susceptor 168.
  • Spacers 234 keep grounded lifting disks 236 at the desired spacing above the wafers 164 top surface.
  • the top of this type of boat 236 has construction similar to that of Figure 13 to insulate and preclude a plasma from occurring anywhere except in the desired region of wafers 164.
  • the mechanisms 242 may be motorized or effected with constant upward force via the combination of the force of the bellows counteracted by the force of a downward pulling constant force spring.
  • the lift plates 244 are vertically spaced apart via spacers 248 ( Figures 16 & 17) at a predetermined distance.
  • Figure 16 shows that the upward motion of lift plates 244 stops relative to the rest of the boat 36 when the lift plates 244 come in contact with the bottom of the susceptors 168.
  • Figure 17 the lift plates 244 stop moving upward when the lift plates 244 come in contact with the grounded disk 250.
  • Figure 18 shows the boat 36 in the fully down position. Wafers 164 are then loaded onto the pins 246 and unloaded from the pins 246 via a robotic arm which, in Figure 18 would be moving in a plane perpendicular to the paper on which the figure is drawn.
  • Figure 19 shows a top view of boat 36 showing the wafer 164 being loaded onto the pins 246 via the robotic arm's end effector 248.
  • the robotic arm's "Z" motion allows it to position the wafer 164 above the pins 246 and then the arm lowers to rest the wafers onto the pins 246.
  • the end effector 248 is below the plane of the wafer 164, the end effector 248 is pulled out of the reactor via the robotic arm.
  • the wafers 164 can be loaded one at a time through a slit valve or all at once via a multiple level end effector which passes through a larger rectangular valve in the wall of the reactor 22.
  • Figure 20 shows apparatus in Section I referenced to Fig. 3, including the vertical motion mechanism 242.

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  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
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Abstract

La présente invention concerne un système de dépôt chimique en phase vapeur activé par plasma, comprenant une chambre supérieure qui permet de mettre en oeuvre un traitement activé par plasma, et une chambre inférieure présentant un orifice d'accès qui permet de charger et de décharger des plaquettes à destination et en provenance d'une nacelle. Ledit système comprend, pour suspendre horizontalement les plaquettes, des suscepteurs disposés à distance les uns des autres dans le sens vertical. Dans la nacelle, une plaque R.F. située au-dessus de chaque plaquette permet de produire un plasma amélioré. Une connexion R.F. permet la transmission d'énergie R.F. aux plaques quand la nacelle pivote. Un dispositif de chargement et de déchargement automatique de plaquettes comprend un mécanisme pour lever chaque plaquette de son suscepteur et un bras robot qui permet le chargement et le déchargement des plaquettes.
PCT/US1999/000706 1998-01-15 1999-01-13 Dispositif et procede de traitement vertical active par plasma WO1999036587A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7157198P 1998-01-15 1998-01-15
US60/071,571 1998-01-15

Publications (1)

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WO1999036587A1 true WO1999036587A1 (fr) 1999-07-22

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002020871A1 (fr) * 2000-09-08 2002-03-14 Centrotherm Elektrische Anlagen Gmbh + Co. Support a plasma en forme de bateau
EP1522090A4 (fr) * 2002-07-15 2006-04-05 Aviza Tech Inc Systeme de traitement thermique et chambre verticale configurable
GB2419896B (en) * 2003-07-15 2007-09-05 Elite Optoelectronics Inc Chemical vapor deposition reactor
CN101893879A (zh) * 2010-06-01 2010-11-24 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体化学气相沉积设备的载板传输控制方法及系统
US8216375B2 (en) 2005-02-23 2012-07-10 Bridgelux, Inc. Slab cross flow CVD reactor
US8216419B2 (en) 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US8506754B2 (en) 2007-04-26 2013-08-13 Toshiba Techno Center Inc. Cross flow CVD reactor
US8668775B2 (en) 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
CN110616419A (zh) * 2019-10-31 2019-12-27 湖南红太阳光电科技有限公司 用于光伏电池镀膜的立式pecvd设备
EP3943639A1 (fr) * 2020-07-22 2022-01-26 Commissariat à l'énergie atomique et aux énergies alternatives Dispositif de depot chimique en phase vapeur assiste par plasma permettant un depot sur les bords de plaque

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US4969416A (en) * 1986-07-03 1990-11-13 Emcore, Inc. Gas treatment apparatus and method
US5458724A (en) * 1989-03-08 1995-10-17 Fsi International, Inc. Etch chamber with gas dispersing membrane
US5844195A (en) * 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source

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US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
US4969416A (en) * 1986-07-03 1990-11-13 Emcore, Inc. Gas treatment apparatus and method
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WO2002020871A1 (fr) * 2000-09-08 2002-03-14 Centrotherm Elektrische Anlagen Gmbh + Co. Support a plasma en forme de bateau
EP1522090A4 (fr) * 2002-07-15 2006-04-05 Aviza Tech Inc Systeme de traitement thermique et chambre verticale configurable
GB2419896B (en) * 2003-07-15 2007-09-05 Elite Optoelectronics Inc Chemical vapor deposition reactor
US8216375B2 (en) 2005-02-23 2012-07-10 Bridgelux, Inc. Slab cross flow CVD reactor
US8506754B2 (en) 2007-04-26 2013-08-13 Toshiba Techno Center Inc. Cross flow CVD reactor
US8668775B2 (en) 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
US8216419B2 (en) 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
CN101893879A (zh) * 2010-06-01 2010-11-24 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体化学气相沉积设备的载板传输控制方法及系统
CN110616419A (zh) * 2019-10-31 2019-12-27 湖南红太阳光电科技有限公司 用于光伏电池镀膜的立式pecvd设备
EP3943639A1 (fr) * 2020-07-22 2022-01-26 Commissariat à l'énergie atomique et aux énergies alternatives Dispositif de depot chimique en phase vapeur assiste par plasma permettant un depot sur les bords de plaque
FR3112795A1 (fr) * 2020-07-22 2022-01-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de depot chimique en phase vapeur assiste par plasma permettant un depot sur les bords de plaque

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