WO1999028967A1 - Boite de transfert d'une tranche en semi-conducteur - Google Patents
Boite de transfert d'une tranche en semi-conducteur Download PDFInfo
- Publication number
- WO1999028967A1 WO1999028967A1 PCT/JP1998/005369 JP9805369W WO9928967A1 WO 1999028967 A1 WO1999028967 A1 WO 1999028967A1 JP 9805369 W JP9805369 W JP 9805369W WO 9928967 A1 WO9928967 A1 WO 9928967A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- box
- gas
- wafer
- power supply
- cleaning
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004140 cleaning Methods 0.000 claims abstract description 93
- 230000007246 mechanism Effects 0.000 claims abstract description 24
- 239000011941 photocatalyst Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 62
- 238000012546 transfer Methods 0.000 claims description 37
- 229920003002 synthetic resin Polymers 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 abstract description 50
- 239000003054 catalyst Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 120
- 239000000463 material Substances 0.000 description 77
- 235000012431 wafers Nutrition 0.000 description 77
- 238000000034 method Methods 0.000 description 33
- 239000000126 substance Substances 0.000 description 31
- 229930195733 hydrocarbon Natural products 0.000 description 21
- 238000003860 storage Methods 0.000 description 21
- -1 methane hydrocarbon Chemical class 0.000 description 19
- 239000002245 particle Substances 0.000 description 19
- 239000004215 Carbon black (E152) Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000000047 product Substances 0.000 description 14
- 239000000356 contaminant Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 239000000428 dust Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 230000002070 germicidal effect Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000013618 particulate matter Substances 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 7
- 238000007872 degassing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 238000004887 air purification Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000001699 photocatalysis Effects 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 231100001261 hazardous Toxicity 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229920006351 engineering plastic Polymers 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical class OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910000497 Amalgam Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 208000033962 Fontaine progeroid syndrome Diseases 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011045 prefiltration Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
- H01L21/67393—Closed carriers characterised by atmosphere control characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
Definitions
- the present invention relates to a transport box for semiconductor substrates, and particularly to a transport box (carrier) for storing and transporting substrates such as Si wafers, glass substrates, and metal-coated substrates in advanced industries such as semiconductors, liquid crystals, and precision machinery. Box) concerning.
- substrates such as Si wafers, glass substrates, and metal-coated substrates in advanced industries such as semiconductors, liquid crystals, and precision machinery. Box
- the air cleaning in a conventional clean room will be described with reference to FIG. 14 by taking air cleaning in a semiconductor manufacturing plant as an example.
- the outside air 1 is first filtered to remove coarse particles by the pre-filter 2, then air-conditioned by the air conditioner 3, and is dust-removed by the medium-performance filter 4.
- the HEPA filter (high-performance filter) 6 installed on the ceiling of the clean room 5 removes fine particles, and the clean room 5 is maintained in the class 100 to 1,000 (see “Cleaning design”).
- ⁇ 7 -2 indicates a fan, and arrows indicate the flow of air.
- the conventional air purifier in a clean room is designed to remove fine particles, so it was configured as shown in Figure 14. Such a configuration is effective for removing fine particles, but is not effective for removing gaseous harmful components.
- H.C. must be removed because it is a gaseous harmful component that has a very low concentration in normal air (indoor air and outside air) that causes contamination.
- gaseous substances also pose a problem if they are generated during work in a clean room. That is, as a cause of the gaseous substance, in a normal clean room, the gaseous substance introduced from the outside air (the gaseous substance cannot be removed at the fill in the clean room, so the gaseous substance in the outside air is introduced. In addition, since the gaseous substances generated in the clean room are added, the gaseous substances in the clean room have a higher concentration than the outside air, and contaminate the wafer substrate and the substrate.
- the concentration of gaseous substances in the clean room is reduced. It is concentrated and has a considerably higher concentration than the outside air. It adheres to the substrate and substrate and contaminates the surface.
- the degree of this contamination can be represented by the contact angle between the substrate and the substrate. If the contamination is severe, the contact angle is large. Substrate / substrate with a large contact angle, even if formed on the surface, has low adhesion strength of the film (poor adaptability), leading to a decrease in yield.
- the contact angle is the contact angle of water wetting, and indicates the degree of contamination of the substrate surface. That is, when hydrophobic (oil-based) contaminants adhere to the substrate surface, the surface repels water and becomes less wettable. Then, the contact angle between the substrate surface and the water droplet increases. Therefore, if the contact angle is large, the degree of contamination is high, and if the contact angle is small, the degree of contamination is low.
- the present inventors have proposed a space cleaning method using photoelectrons or photocatalysts as a local cleaning technology.
- Photo-electron cleaning method (removal of particulate matter): Japanese Patent Publication No. 3-5 859, Japanese Patent Publication 6-74909, Japanese Patent Publication 8-211, Japanese Patent Publication 7-21 No. 369, 2) Cleaning method using photocatalyst (removal of gaseous harmful components): Japanese Patent Application Laid-Open No. Hei 9-198672, Japanese Patent Application Laid-Open No. Hei 9-205046, 3) Photoelectron and photocatalyst Combination method (simultaneous removal of particles and gas): There is a patent No. 2623290.
- the present invention provides a mini-environment semiconductor substrate, which is increasingly required in advanced industries such as the semiconductor, liquid crystal, and precision machine industries, as the quality of the product is increased, refined, and miniaturized.
- An object of the present invention is to provide a transfer box for semiconductor substrates having a practically effective function of removing fine particles and gaseous harmful components as a transfer box.
- the present invention provides a semiconductor substrate transport box having an opening / closing mechanism that allows a semiconductor substrate to enter and exit, wherein the box uses photoelectrons and photocatalyst by light irradiation for cleaning the inside of the box.
- This is a semiconductor substrate transfer box having a gas cleaning unit integrated with a gas cleaning device.
- a semiconductor substrate carrying box having an opening / closing mechanism capable of moving a semiconductor substrate in and out, wherein the box includes a gas purifying device using photoelectrons and a photocatalyst by irradiating light for cleaning the inside of the box.
- the present invention provides a semiconductor substrate transfer box having a gas purifying unit integrated with a power supply unit having a charging function and a battery for supplying power to the device.
- the transfer box is preferably made of synthetic resin, and the gas cleaning unit includes a radiator for transmitting heat generated by the power supply device to the gas cleaning device when a power supply device is integrated. Is good.
- the gas purifying unit does not have a power supply unit integrated, the load port, standby place waiting for the process, stocker, etc. should be provided between the transport boxes (other than transport). It operates by receiving power supply through connection to a power supply device installed in the office.
- FIG. 1 is a cross-sectional view showing an example of a horizontally-opening integrated transfer box of the present invention.
- FIG. 2 is a cross-sectional view showing an example of the open cassette storage type horizontal opening transport box of the present invention.
- FIG. 3 is a cross-sectional view showing one example of the open cassette storage type bottom-opening transport box of the present invention.
- FIG. 4 is a block diagram in which the gas cleaning unit of the present invention and a power supply device are connected.
- FIG. 5 is a block diagram in which the gas cleaning device of the present invention and a power supply device are integrated.
- FIG. 6 is an explanatory diagram for utilizing heat generated from a power supply device.
- FIG. 7 is a cross-sectional view showing another example of the horizontal opening integrated transfer box of the present invention.
- FIG. 8 is a side view of FIG.
- FIG. 9 is a cross-sectional view showing an example of the open cassette storage type horizontal opening transfer box of the present invention.
- FIG. 10 is a cross-sectional view showing an example of the open cassette storage type bottom-opening transport box of the present invention.
- Fig. 11 is a graph showing the change of contact angle (degree) according to the holding time (day).
- Fig. 12 is a graph showing the change in contact angle (degree) with the holding time (day).
- Fig. 13 is a graph showing the change in non-methane hydrocarbon concentration (ppm) with retention time (hour).
- Figure 14 is a schematic diagram showing air cleaning in a conventional clean room.
- the semiconductor substrate transport box of the present invention has an opening / closing mechanism that allows a semiconductor substrate to be stored in or taken out of the box, and a gas purifying apparatus using photoelectrons and photocatalysts by irradiating light for cleaning the inside of the box. (Gas purification unit), which can be removed from the box as appropriate.
- the gas purifier is used between the original use of the box as a transport Power supply device installed in a load port, a stand-by place where a process is waiting, or a stocker, etc., receives power supply and operates, thereby allowing the gas in the box containing the substrate to be stored. Is performed.
- the semiconductor substrate transport box of the present invention has an opening and closing mechanism for storing and unloading the semiconductor substrate in and out of the box, and performs gas cleaning using photoelectrons and photocatalyst by light irradiation for cleaning the inside of the box.
- a power supply unit with a battery-equipped charging function to supply power to the device, and they are integrated (gas cleaning unit), and the unit is removed from the box as appropriate. You can do it.
- the unit may be provided with a radiator for transmitting heat generated from the power supply device to a gas cleaning device using photoelectrons and photocatalysts.
- boxes of the present invention can house, transport, and / or store a semiconductor substrate, and any box that can be hermetically sealed may be used.
- it is made of metal or synthetic resin.
- A1 is preferable because of its light weight.
- a synthetic resin any material may be used as long as it is excellent in processability, rigidity, and durability, and generates little gas.
- a transparent material is more preferable.
- there are general-purpose plastics such as ABS and acryl, engineering plastics such as polycarbonate (PC), and super-engineering plastics such as polyetherimide.
- the box opening / closing mechanism is any of the above-mentioned hermetically sealable boxes in which a gas purifying device using a photoelectron and a photocatalyst of the present invention described below can be installed, as long as the substrate can be appropriately stored and taken out. good.
- the box opening / closing mechanism consists of a box door, a wafer presser, and a sealing material, and is integrated.
- the box door is engaged with a door opener (SEMI standard), and is pulled out of the box body in the horizontal direction. By pulling down in the direction, the box door is opened from the box body.
- a door opener SEMI standard
- Examples of such boxes include: 1) a horizontal open integrated transport box, and 2) an open cassette storage type, based on the position of the opening / closing door and the type of board storage (whether or not to store the board in an open cassette).
- the contaminants in the box are effectively removed by the gas flow (natural circulation) utilizing the heat generated in the device.
- the cleaning device using photoelectrons is composed of a photoelectron emission material, an ultraviolet lamp, an electrode material for an electric field for photoelectron emission, and a charged particle collection material, and removes fine particles (particulate matter).
- the photoelectron emitting material may be any material that emits photoelectrons when irradiated with ultraviolet light, and the smaller the photoelectric work function, the better. From the viewpoint of effect and economy, Ba, Sr, Ca, Y, Gd, La, Ce, Nd, Th, Pr, Be, Zr, Fe, Ni, Z n, Cu, Ag, Pt, Cd, Pb, A1, C, Mg, Au, In, Bi, Nb, Si, Ti, Ta, U, B, Eu , Sn, P, or W, or a compound or alloy or a mixture thereof, and these are used alone or in combination of two or more. As the composite material, a physical composite material such as amalgam can be used.
- the oxide as a compound, boride, there is a carbide the oxide B a 0, S R_ ⁇ , C a O, Upsilon 2 ⁇ 5, Gd 2 0 3, N d 2 0 3, T h0 2 , Z R_ ⁇ 2, F e 0 3, Z n O, C uO, A g 2 O, L a 2 0 3, P T_ ⁇ , P b O, A 1 2 Oa, Mg_ ⁇ , I n 2 0 3 , B i O, Nb_ ⁇ , include B e O, the Mataho of compounds ⁇ ⁇ , G d B e, L a B 5, N d B ⁇ , C e B ⁇ , E u B 6, P r B beta, include Z r B 2, still carbides UC, Z r C, T a C, T i C, NbC, WC, etc.
- the alloy examples include brass, bronze, phosphor bronze, an alloy of Ag and Mg (Mg is 2 to 20 wt%), an alloy of Cu and Be (Be is l to 10 wt%). ) And an alloy of Ba and A 1 can be used, and the alloy of Ag and Mg, the alloy of Cu and Be, and the alloy of Ba and A 1 are preferable. Oxides can also be obtained by heating the metal surface alone in air or by oxidizing it with chemicals.
- an oxide layer on the surface by heating before use to obtain a stable oxide layer over a long period of time.
- an oxide film can be formed on the surface of an alloy of Mg and Ag in water vapor at a temperature of 300 to 400 ° C. It is stable over time.
- a substance that emits photoelectrons can be used in addition to another substance.
- a material in which a substance capable of emitting photoelectrons is added to an ultraviolet-transparent substance Japanese Patent Publication No. 7-93098, Japanese Patent Application Laid-Open No. 424/340.
- the shape and structure of the photoelectron emitting material differ depending on the shape and structure of the device (unit) or the desired effect, and can be determined as appropriate.
- the irradiation source for emitting photoelectrons from the photoelectron emitting material may be any source that emits photoelectrons upon irradiation, and ultraviolet light is usually preferred.
- the type of ultraviolet light may be any as long as the photoelectron emitting material emits photoelectrons by irradiation. Any ultraviolet ray source can be used as long as it emits ultraviolet rays, but a mercury lamp, for example, a germicidal lamp is preferable in terms of compactness.
- the positions and shapes of the ultraviolet light source, the photoelectron emitting material, the electrode, and the charged particle collecting material, which are features of the present invention, will be described. These are characterized in that they are installed around an ultraviolet light source, together with a photocatalyst described later as appropriate, depending on the required performance, and are integrated as a unit (unit) for purifying gases containing harmful gases and fine particles.
- the position and shape of the photoelectron emitting material may be any as long as they can be installed so as to surround the ultraviolet light emitted from the ultraviolet light source (to increase the irradiation area). Normally, ultraviolet rays from an ultraviolet ray source are radially emitted in the radial direction. Therefore, it is sufficient if the ultraviolet rays can be installed in the circumferential direction so that the ultraviolet rays are emitted.
- Electrode material and its structure may be those used in a well-known charging device. Any electrode material can be used as long as it is a conductor, examples of which include tungsten, SUS, or Cu-Zn wires, rods, nets, and plates. One or a combination of two or more of these is installed so that an electric field can be formed in the vicinity of the photoelectron emitting material (Japanese Patent Application Laid-Open No. Hei 2-33557).
- the collection material (dust collection material) for charged fine particles is generally an electrode material such as a dust collection plate and a dust collection electrode in a normal charging device, and an electrostatic filter system.
- a steel wool electrode and a tungsten wool electrode are used.
- a wool-like structure such as described above is also effective.
- Electrec materials can also be suitably used.
- the photoelectron emission electrode can also serve as a dust collecting material (Japanese Patent Publication No. 8-211), the preferred combination of photoelectron emission material, electrode material, and material for collecting charged fine particles is box shape. It can be determined as appropriate according to the structure, required performance, economics, etc., as long as it can quickly move contaminants such as fine particles present in the cleaning space described later into the purification device by installing in the space. good.
- the position and shape of the photoelectron emitting material and the electrode surround the ultraviolet light source, the ultraviolet light source, the photoelectron emitting material, the electrode, and the charged particle collecting material can be integrated, and the ultraviolet light emitted from the ultraviolet light source is effectively used, and It can be determined by a preliminary test or the like in consideration of the shape, effect, economy, etc. of the box so that the emission of particles and the charging and collection of the fine particles by the photoelectrons can be performed effectively.
- a rod-shaped (cylindrical) ultraviolet lamp when a rod-shaped (cylindrical) ultraviolet lamp is used, ultraviolet rays are emitted radially in the radial direction. Therefore, the more the radial radial ultraviolet rays are applied to the photo-emitting material as much as possible, the larger the amount of photoelectron emission. Increase.
- the photocatalyst removes gaseous harmful components, and is excited by light irradiation from a light source, and causes organic gases (non-methane hydrocarbons, H.C) involved in increasing the contact angle to participate in increasing the contact angle.
- organic gases non-methane hydrocarbons, H.C
- Any material may be used as long as it can be decomposed into a form that does not affect it or converted into a stable form that has no effect even if attached.
- semiconductor materials are preferred because they are effective, readily available, and have good workability.
- these are used alone or in combination of two or more.
- the elements are Si, Ge, Se, and the compounds are A1P, A1As, GaP, A1Sb, GaAs, InP, GaSb, I n As, In S b, C d S, C d S e, Z n S, Mo S 2 , WT e 2 , Cr 2 T e 3 , Mo Te, Cu 2 S, WS 2 , the oxide T i ⁇ 2, B i 2 0 3, C u O, C u 2 0, Z n O, Mo_ ⁇ 3, I n Oa, A g O, P b O, S r T i ⁇ 3 , B a T i 0 3, C o 3 ⁇ 4, F e 0 3, N I_ ⁇ the like.
- the photocatalyst can be formed on the metal surface by firing the metal material.
- An example of this was calcined for T i material, touch light effect formation of T i ⁇ 2 on the surface thereof There is a medium.
- the photocatalyst is characterized by being installed around a light source similarly to the photoelectron emitting material, and integrated as a gas cleaning device (unit). Further, depending on the required performance, it can be integrated with the above-described cleaning device using photoelectrons, which is a feature of the present invention.
- the installation position of the photocatalyst in the gas cleaning device includes a method of installing the photocatalyst emitting material integrally and a method of separately installing the photoelectron emitting material.
- a method of installing the photocatalyst emitting material integrally includes a method of installing the photocatalyst emitting material integrally and a method of separately installing the photoelectron emitting material.
- an ultraviolet source is surrounded by a vitreous substance or a glass material and applied to the surface of the vitreous substance, (3) circumferential direction facing the ultraviolet source (4) coating the photocatalyst with a suitable material such as plate, cotton, mesh, honeycomb, membrane, cylinder, or fiber, or wrapping or sandwiching the photocatalyst inside the device It may be used by fixing to.
- a suitable material such as plate, cotton, mesh, honeycomb, membrane, cylinder, or fiber
- wrapping or sandwiching the photocatalyst inside the device It may be used by fixing to.
- An example is
- Well-known means such as an impregnation method, a photoreduction method, a sputter deposition method, and a kneading method can be appropriately used for the addition method.
- any light source that emits a wavelength that is absorbed by the photocatalyst material may be used.
- Light in the visible, ultraviolet, or ultraviolet region is effective, and a known light source can be appropriately used.
- mercury lamps include germicidal lamps, black lights, fluorescent chemical lamps, and UV-B UV lamps.
- a visible light source can be used to remove contaminants, but when integrated with the photoelectron device, the ultraviolet lamp, for example, a germicidal lamp is effective. .
- a germicidal lamp is preferable because it can increase the effective irradiation light amount to the photocatalyst (irradiation in which the photocatalyst absorbs and exerts a photocatalytic action) and accelerates the photocatalytic action.
- the present invention differs depending on the type and properties of the container (wafer, glass material, etc.) and the thin film on the container. According to their research, the following can be considered.
- H.C organic gas
- H.C organic gas
- H.C organic gas
- its structure is one CO, one COO Has a bond (has hydrophilicity).
- This HC can be considered as a hydrophobic substance (a C 1 C 1 part of the basic structure of HC) having a hydrophilic part (one CO, one C ⁇ bond).
- the organic gases increase the contact angle of the contained object surface such as a glass substrate in the usual clean room, high molecular weight C ie ⁇ C 20 H.
- C phthalates
- phthalates For example, higher fatty acid phenol derivative
- — CO chemical structure of — CO, which has a single C (bond (having hydrophilic character) (Air Purification, Vol. 3, Vol. 1, No. 1, pl 6-21) , 195).
- the photocatalyst when the photocatalyst is placed in an atmosphere in which an organic gas is present, the photocatalyst has an adsorbing action, so that H.C is the active portion of the photocatalyst and the COC bond is adsorbed on the photocatalyst surface, Acted upon and converted to another stable form.
- the organic gas is considered to be in a stable form (converted to low molecular substances) and not adhere to the wafer or glass substrate, or not to exhibit hydrophobicity even if adhered.
- the photocatalyst is effective not only for decomposing and removing H.C but also for removing a basic gas (hazardous gaseous component) such as ammoniaamine.
- the gas cleaning in this box can be performed by a combination of photoelectrons and photocatalysts depending on required performance, economy, and the like, which is a feature of the present invention. That is, when both the fine particles and the gaseous harmful components are problematic, a cleaning device in which photoelectrons and photocatalysts are integrated can be used.
- this box is a box having a self-cleaning function.
- the box of the present invention is integrated with a unitary gas purifying device using the above-mentioned photoelectric and photocatalyst, which can be easily attached or detached, and is operated by being connected to a power supply device for cleaning.
- the power supply device with a charging function equipped with a battery and the cleaning device are integrated, and mounted and cleaned as a gas cleaning unit, which is a feature of the present invention.
- FIG. 4 shows a schematic block diagram of the connection between the gas cleaning device of the present invention and the power supply device, which will be described next.
- the box 10 (corresponding to box 21 described later) of the present invention is provided with a gas cleaning device A -2 using a photoelectron and a photocatalyst.
- the box 10 is integrated with the gas purifier A- 2 .
- the box of the present invention is used for transporting substrates (carrier). Since the ratio of the residence time at the load port, the process waiting standby place, and the storage force other than the transport is large, the gas purifier A -2 uses the load port and the process wait other than the transport.
- the power from the power supply 13 in the power supply device 14 installed at the location and the storage power is supplied, and the gas in the pox 10 is cleaned. That is, the box 10 of the present invention, in which the gas purifying device A -2 is integrated, has a power supply device 14, for example, a mouthpiece of a semiconductor processing device, a process waiting state, during a transfer.
- the box is cleaned by being installed in a standby place, a stocker, or the like, and receiving power supply as described above.
- the gas inside the box is cleaned during the standby time of the box (temporary installation, installation at night, etc.) using the aforementioned photoelectrons and photocatalysts. An ultra-clean space is created.
- the box 10 of the present invention is provided with a power supply device ⁇ - : ⁇ equipped with a battery and a charging function, and a gas cleaning device A -2 using a photoelectron and a photocatalyst.
- the power supply unit A and the gas purifier A -2 are integrated (gas purifier unit, A :). That is, the power supply device A- : l is composed of a power supply 13 for supplying power to the charging circuit 11, the battery 12, and the gas purifying device A, and a power supply device (power supply station) 14 as appropriate. And the battery 12 is charged via the charging circuit 11.
- the box of the present invention is used for transportation (carrier), and the gas purifier A- 2 during transportation is provided with the power supply 1 for the power charged in the battery 12 in the power supply A as described above. Continuous operation with supply from 3.
- the battery-12 may be any battery that can be charged and can appropriately supply power. Examples thereof include a Li-ion battery and a Ni-hydrogen battery.
- the box 10 of the present invention in which the gas cleaning unit A is integrated, is provided with a power supply device 14, for example, a load port of a semiconductor processing device, or a standby state during a process, during the transportation. It is installed in a place stocker or the like, and receives power from the battery 12 as described above.
- a power supply device 14 for example, a load port of a semiconductor processing device, or a standby state during a process, during the transportation. It is installed in a place stocker or the like, and receives power from the battery 12 as described above.
- the gas cleaning using the photoelectrons and the photocatalyst is performed while the box is being transported or in a standby state, that is, continuously, so that an ultra-clean space is maintained in the box.
- FIG. 6A shows a gas purifier A. 2 wall adjacent to the electronic components and the power supply device disposed in the power supply device A.! In.
- the heat generated from the electronic components 15 generated by the operation is transmitted to the wall 17 of the gas purifier A- 2 via the radiator plate 16 (the cleaning space of the plate electrode 30 or the light shielding material 35 described later).
- Reference numeral 18 denotes a heat conductive sheet for efficiently transmitting the heat.
- the heat conductive grease and epoxy resin adhesive can be used in addition to the sheet.
- the heat radiating plate 16 may be any material as long as it efficiently transmits heat, and examples thereof include Cu and A1. Usually, A 1 is preferred because of its light weight and relatively low cost.
- Reference numeral 19 denotes an electronic component which is provided on the printed circuit board 20 and generates little heat. In this way, heat generated from the electronic component 15 that generates a large amount of heat is transmitted to the wall surface of the gas cleaning device A- 2 . By effectively utilizing the heat, the gas circulation in the device A- 2 is accelerated, so that the inside of the box is effectively cleaned.
- the cleaning of the gas of the present invention is essentially gentle because it is caused by the flow of gas caused by heat generated from a light source such as an ultraviolet lamp. This is effective because the flow of gas is accelerated by utilizing the heat generated from the gas.
- FIG. 6 (b) will be described.
- FIG. 6 (b) shows a case where the heat radiating plate 16 is directly installed inside the gas cleaning device via the wall surface 17.
- the present invention can be similarly used in various gases such as N 2 and Ar, including air in a normal clean room.
- This box can be used not only for transportation but also as a stock box (storage force) since a clean space can be continuously obtained by power supply, which is a feature of the present invention.
- a heating source such as a lamp or a lamp inside to accelerate the gas flow. The installation accelerates the removal of pollutants, so that it can be used as appropriate.
- the gas purifying apparatus or gas purifying unit of the present invention should be integrated into a box by using a well-known joining method such as through a gas-free packing material or by using a magnet (magnetic force). Can be.
- the wafer transfer box 21 in the semiconductor factory will be described with reference to FIG.
- Figure 1 shows a horizontal opening integrated transport box.
- clean room of class 1,000 also contains non-gas due to degassing from clean room components and equipment. Methane hydrocarbons are present at 1.1 to 1.5 ppm. On the other hand, workers also generate contaminants (gaseous substances, fine particles), so the vicinity of people is a dirty environment for wafer 22.
- the wafer 22 is stored in the wafer transfer box 21 and transferred to each process (eg, a film forming process) to be processed into a high-quality product.
- the opening / closing mechanism of the box 21 is composed of a box door 23, a wafer holder 24, and a sealing material 25, and is integrated.
- the box door 23 is engaged with a door opener (not shown, SEMI standard).
- the box door 23 is released from the box body 21 by pulling it downward after pulling it out horizontally from the box body.
- the automatic transfer robot for clean room holds the robot flange 26, and is placed on the load port of the semiconductor processing equipment. Each sheet is loaded and unloaded. After the box doors 23 are closed, they are transported again to the next process equipment by the automatic transport robot for clean room.
- the box 21 includes an ultraviolet lamp 27, a photocatalyst 28, a photoelectron emission material 29, an electrode 30 for emitting photoelectrons from the photoelectron emission material (lattice or net shape), and a material for collecting charged fine particles 31.
- Gas purifier A is installed.
- the power supply from the power supply for the operation of the cleaning device A -2 is supplied from an external power supply device as shown in FIG. 4 described above, and the air purification in the box 21 is performed by the device A -2 .
- the device A -2 Since the device A -2 is supplied with power from the power supply device installed at the outlet port, cleaning is performed for a long time (clean space is maintained).
- the box 21 contains hydrocarbons (H.C) as gaseous harmful components (hazardous gases) that increase the contact angle of the wafer when attached to the wafer 22 and the wafer. If they adhere, they cause disconnections and short circuits, causing defects and the presence of fine particles that reduce the yield. These contaminants enter the box 21 from the clean room each time the box 21 is opened and closed for storing and removing the wafer 22 from and into the box 21.
- H.C hydrocarbons
- hazardous gases gaseous harmful components
- the H.C is decomposed by the photocatalyst action of the photocatalyst 28 irradiated with ultraviolet rays from the ultraviolet lamp 27, and is converted into a form that does not increase the contact angle.
- the fine particles are charged by the photoelectrons 33 emitted from the photoelectron emitting material 29 irradiated with the ultraviolet lamp 27 to become charged fine particles, and the charged fine particles serve as a collecting material for the charged fine particles.
- the cleaning space B which is collected by the electrode 31 and in which the wafer 22 exists, is ultra-cleaned. Movement to H.
- the box material is made of PC, UV lamp germicidal lamps (2 54 eta m), intended photocatalyst obtained by adding T i ⁇ 2 to A 1 material, as the light emission material obtained by adding Au to A 1 material
- the electrode for photoelectron emission is reticulated SUS (10 V / cm), and the charged fine particle trapping material is SUS (500 VZcm).
- reference numeral 35 denotes a light-shielding material, which prevents irradiation of the wafer 21 with ultraviolet rays from the ultraviolet lamp 27.
- Reference numeral 36 denotes a partition plate for effectively flowing the flow of air 34- : 134-6 due to the irradiation of ultraviolet rays to the vicinity of the wafer. In this way, the harmful gases and particulates in the air in Box 21 are treated, and the air in Box 21 does not increase the contact angle when a substrate such as a wafer is stored, and it is more effective than Class 1. An ultra-clean space is maintained.
- the gas cleaning device A can be separated from the cleaning space B of the box in which the wafers are stored, and they are joined via packing material.
- the disconnection is performed at the time of regular maintenance, for example, once a year.
- Reference numeral 37 denotes a kinematic coupling having a V-groove for box positioning.
- FIG. 2 shows another type of box of the wafer transfer box 21 shown in FIG. 1 of the first embodiment.
- FIG. 2 shows an open cassette storage type horizontal opening transfer box in which an open cassette 38 holding a wafer 22 is stored in the box of FIG. In the opening / closing mechanism of this box, since the wafer 22 is held by the open cassette 38, there is no wafer holder (24 in FIG. 1).
- the same reference numerals as those in FIG. 1 have the same meaning.
- FIG. 3 shows another type of box of the wafer transfer box shown in FIG. 1 of the first embodiment.
- FIG. 3 shows an open cassette storage type bottom-opening transport box.
- the box 21 has a box 21 opening and closing mechanism including a box door 23 and a sealing material 25 at the bottom thereof.
- the box 21 is a bottom-open box, and the opening / closing mechanism including the box door 23 and the sealing material 25 of the box 21 is lifted to the box door 23 with the box floating.
- the box door 23 is opened by engaging an orbner with an evening mechanism (not shown) and lowering it vertically.
- the box 21 accommodates an open cassette 38 holding the wafer 22.
- a wafer transfer box integrated with a cleaning device for removing harmful gases and fine particles shown in Fig. 1 was installed in a semiconductor factory of class 100, and the following sample gas was charged, and ultraviolet irradiation was performed.
- the contact angle on the wafer stored in the wafer transfer box, the concentration of fine particles in the box, and the concentration of non-methane hydrocarbon were measured.
- the power supply to the power supply device was performed by connecting the power supply device to the power supply device of the storage power in the clean room.
- Transport box size 35 liters, manufactured by P.C.
- UV light source germicidal lamp 4W.
- Electrode plate SUS plate, 800 V / cm.
- Fine particle concentration Class 1, 0 0 0,
- Non-methane hydrocarbon concentration 1.5 ppm
- particle concentration shows a 0.1 total number of m or more fine particles contained in 1 ft 3.
- Figure 11 shows the relationship between the contact angle on the wafer stored in the box and the holding time.
- each of the samples of the present invention is indicated by an arrow mark, in comparison, an image without an electric field for photoelectron emission is indicated by an arrow mark, an image without a photocatalyst is indicated by an arrow, and a sample without UV irradiation. Shown by- ⁇ -mark.
- Table 1 shows the particle concentration (class) in the box after 1 hour, 2 hours, 1 day, and 1 week. For comparison, Table 1 shows the one without the electric field for photoelectron emission, the one without the photocatalyst, and the one without UV irradiation.
- Table 1 Numerical values: class 1 hour after 2 hours after day after week After the present invention ⁇ ⁇ ⁇ Set the electric field for photoemission 1000 900
- FIGS. 7 and 8 show a horizontal opening integrated type transport box
- FIG. 8 is a side view of FIG.
- high-quality products are manufactured in a class 1,000 clean room. Since the wafer 22 is processed (deposited, etc.) into a high-quality (miniaturized, precise) product, it is affected by gaseous substances and fine particulate matter (fine particles).
- non-methane hydrocarbons caused by degassing from clean room components and equipment are 1.1 as gaseous harmful components in Class 1,000 clean rooms. ⁇ 1.5 ppm is present.
- pollutants gaseous substances and fine particles
- the vicinity of a person is a dirty environment for the wafer 22.
- the wafer 22 is stored in the wafer transfer box 21 and transferred to each process (eg, a film forming process) to be processed into a high-quality product.
- the opening / closing mechanism of the box 21 is composed of a box door 23, a wafer holder 24, and a sealing material 25, and is integrated.
- the box door 23 is engaged with a door opener (not shown, SEMI standard).
- the box door 23 is released from the box body 21 by pulling it downward after pulling it out horizontally from the box body.
- an automatic transfer robot for a clean room holds the robot flange 26, and is mounted on a load boat of a semiconductor processing apparatus. Mouthpieces are diced and unloaded one by one. After the box doors 23 are closed, they are again transferred to the next-step processing device by the automatic transfer robot for clean room.
- the box 21 includes a gas cleaner comprising an ultraviolet lamp 27, a photocatalyst 28, a photoelectron emission material 29, an electrode 30 for photoelectron emission from the photoelectron emission material, and a material for collecting charged fine particles 31.
- a gas purifying unit A (AA- 2 ) comprising a purifying device A- 2 and a power supply unit with a charging function equipped with a battery 12 (see Fig. 5) for supplying power to the gas purifying device A is installed. ing.
- the power supply device A ⁇ and the gas purifying device A- 2 in the unit A are as shown in FIGS. 5 and 6 above, and the air purification in the box 21 is performed by the unit A.
- the cleaning (air cleaning) by the gas cleaning device A- 2 is performed continuously for a long time because power is supplied from the power supply device described above.
- box 21 causes hydrocarbon (H.C) as a gaseous harmful component (hazardous gas) that increases the contact angle of the wafer when attached to wafer 22 and breaks or short-circuits when attached to the wafer. Therefore, there are fine particles that cause defects and lower the yield. These contaminants enter the box 21 from the clean room each time the box 21 is opened and closed for storing and removing the wafer 22 from and into the box 21.
- H.C hydrocarbon
- hazardous gas gaseous harmful component
- the H.C is decomposed by the photocatalyst action of the photocatalyst 28 irradiated with ultraviolet rays from the ultraviolet lamp 27, and is converted into a form that does not increase the contact angle.
- the fine particles are charged by the photoelectrons 33 emitted from the photoelectron emitting material 29 irradiated with the ultraviolet lamp 27 to become charged fine particles, and the charged fine particles serve as a collecting material for the charged fine particles.
- the cleaning space B which is collected by the electrode 31 and in which the wafer 22 exists, is ultra-cleaned.
- the transfer of H.C and fine particles in the box to the gas cleaning device A- 2 is performed by irradiating the ultraviolet lamp 27 in the device A and generating heat from the power supply device in the gas cleaning device A- 2 .
- flow of air provoked a slight temperature difference between the upper and lower by (in FIG 7 34 34 - ⁇ ).
- the box material is made of PC, UV lamp germicidal lamps (2 54 ⁇ m), intended photocatalyst obtained by adding T i 0 2 to A 1 material, photoemission material was added to A u to A 1 material
- the electrode for photoelectron emission is mesh SUS (10 V / cm), charged fine particles
- the child collecting material is SUS (500 VZ cm).
- reference numeral 35 denotes a light-shielding material, which prevents irradiation of the wafer 21 with ultraviolet rays from the ultraviolet lamp 27.
- Reference numeral 36 denotes a partition plate for effectively flowing the air flow 3434- ⁇ due to the ultraviolet irradiation and the heat generated from the power supply device in the vicinity of the wafer.
- the harmful gases and particulates in the air in Box 21 are treated, and the air in Box 21 does not increase the contact angle when a substrate such as a wafer is stored, and it is more effective than Class 1.
- An ultra-clean space is maintained. Since the contact angle of a substrate such as a wafer does not increase, it has an effect of forming a film with a strong adhesive force when formed on the surface of the substrate (for example, H.C concentration: 0.1 ppm or less, NH 3 concentration: The result was less than 1 ppm).
- the gas cleaning unit A can be separated from the cleaning space B of the box containing the wafers, and they are joined via a packing material.
- the disconnection is performed at the time of regular maintenance, for example, once a year.
- 37 is a kinematic coupling having a V-groove for box positioning.
- FIG. 9 shows another type of box of the wafer transfer box 21 shown in FIGS. 7 and 8 of the fifth embodiment.
- FIG. 9 shows an open cassette storage type horizontal opening transfer box in which an open cassette 38 holding a wafer 22 is stored in the box shown in FIGS. In the opening and closing mechanism of this box, the wafer 22 is held by the open cassette 38, so there is no wafer holder (FIG. 7).
- FIG. 9 the same symbols as those in FIGS. 7 and 8 have the same meaning.
- FIG. 10 shows another type of the wafer transfer box shown in FIGS. 7 and 8 of the fifth embodiment.
- FIG. 10 shows an open cassette storage type bottom-opening transport box.
- the box 21 has a box door 23 and a box 21 opening / closing mechanism made of a sealing material 25 at the bottom thereof.
- the box 21 is a bottom-open box, and the opening / closing mechanism including the box door 23 and the sealing material 25 of the box 21 is lifted to the box door 23 with the box floating.
- the box door 23 is opened by engaging the evening mechanism opener (not shown) and lowering it vertically.
- the box 21 accommodates an open cassette 38 holding the wafer 22.
- a wafer transfer box with the configuration shown in Fig. 7 was installed in a semiconductor factory of class 1, 000, and a cleaning device for removing harmful gases and particulates shown in Fig. 7 and a cleaning device shown in Figs.
- a gas purifying unit consisting of a battery-equipped power supply unit with a charging function for supplying voltage to the device with the above configuration is installed, the following sample gas is charged, ultraviolet irradiation is performed, and the device is stored in the wafer transfer box The contact angle on the wafer, the concentration of fine particles in the box, and the concentration of non-methane hydrocarbons were measured.
- the power supply to the power supply device was performed from a power supply device with a tough force in the clean room.
- Transport box size 35 liters, manufactured by P.C.
- UV source germicidal lamp 4W.
- Electrode for photoemission lattice-shaped SUS material, 20 VZcm.
- Collection material for charged fine particles electrode plate; S US plate, SOO VZc nu 3
- Power supply device
- Charging circuit A device equipped with a voltage monitor circuit to charge the battery under optimal conditions.
- DC-DC converter and DC-AC converter to supply AC voltage of 50 kHz, for electrodes for photoemission; DC 100 V, for collecting charged particulates: DC 1, 000 V) The one with.
- DC-DC converter DC-Power transistor and power FET used in AC converter and charging circuit.
- Fine particle concentration Class 1, 0 0 0,
- Non-methane hydrocarbon concentration 1.5 ppm
- the particle concentration (class) indicates the total number of fine particles of 0.1 Aim or more contained in 1 fta.
- Figure 12 shows the relationship between the contact angle on the wafer stored in the box and the holding time.
- the one of the present invention is indicated by an arrow, the comparison is without an electric field for photoelectron emission, and the one without the photocatalyst is the one without bite, and the one without UV irradiation. -Indicated by a sign.
- Table 3 shows the particle concentration (class) in the box after 1 hour, 2 hours, 1 day, and 1 week. For comparison, Table 3 shows the results without the electric field for photoelectron emission, without the photocatalyst, and without UV irradiation. Table 3 Numbers: Class
- the wafer was stored in a box under the above conditions, and phthalate esters (DOP, DBP) on the wafer were examined.
- DOP phthalate esters
- Measurement method Adhered substances on the wafer exposed to air under the above conditions for 16 hours were removed, and phthalic acid ester was measured by GCMS method.
- FIG. 13 shows the results of a test performed on the above-described device of the present invention with the heat sink removed.
- the drawing shows the relationship between non-methane hydrocarbon concentration and retention time.
- the one according to the present invention is indicated by an eleven-one mark, and the one obtained by removing the heat sink for comparison is indicated by a one-mark. From Fig. 13 it can be seen that the installation of the heat sink accelerates the removal rate of the cleaning device.
- i indicates a value below the detection limit (0.1 ppm).
- the box has an opening and closing mechanism, and a gas purifying device that uses photoelectrons and photocatalysts to clean the inside of the box, or a battery mounted charging device that supplies power to the device and the device.
- the inside of the box was cleaned by a gas cleaning device, and the cleaning was performed continuously for a long time because power was supplied from the power supply device.
- the residence time of the board storage box is longer than the time required for actual transfer, and is more likely to be at places other than transfer, such as load ports, stockers, and process waiting. Time is quite a lot. Therefore, by installing the power supply device in a place other than the transportation, the purification by the purification device of the present invention was rationally performed for a long time.
- the gas purifying device can be separated from the purifying space of the box, maintenance and management of the purifying space and the unit are facilitated.
- the box Since the power is supplied from the power supply unit and the cleaning is performed continuously (maintaining an ultra-clean space), it can be suitably used as a stock box (storage force). (4) The box is practically effective and can be used as a box for transporting substrates in a wide range of fields.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrostatic Separation (AREA)
- Packages (AREA)
- Packaging Frangible Articles (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
L'invention porte sur une boîte (21) de transfert d'une tranche en semi-conducteur, cette boîte comprenant un mécanisme d'ouverture/fermeture pour faire entrer ou sortir une tranche, et se caractérise en ce qu'elle comprend un épurateur de gaz A-2 qui utilise des photo-électrons produits par irradiation de lumière, ou un catalyseur optique destiné à nettoyer l'intérieur de la boîte, ou une unité d'épuration du gaz comprenant l'épurateur de gaz, et une source d'alimentation placée dans un accumulateur et ayant pour fonction de charger l'accumulateur pour alimenter en courant électrique l'épurateur de gaz. Cette boîte permet de retirer avec efficacité de fines particules et des composants gazeux dangereux.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34189397 | 1997-11-28 | ||
JP9/341893 | 1997-11-28 | ||
JP6762598A JP3305647B2 (ja) | 1997-11-28 | 1998-03-04 | 半導体基板用搬送ボックス |
JP10/67625 | 1998-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999028967A1 true WO1999028967A1 (fr) | 1999-06-10 |
Family
ID=26408835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1998/005369 WO1999028967A1 (fr) | 1997-11-28 | 1998-11-30 | Boite de transfert d'une tranche en semi-conducteur |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3305647B2 (fr) |
WO (1) | WO1999028967A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020063246A (ko) * | 1999-12-28 | 2002-08-01 | 가부시키 가이샤 에바라 세이사꾸쇼 | 기판 표면의 산화방지방법 및 장치 |
JP3871508B2 (ja) | 2000-11-15 | 2007-01-24 | 株式会社荏原製作所 | 基板搬送容器の給電装置 |
US8297319B2 (en) | 2006-09-14 | 2012-10-30 | Brooks Automation, Inc. | Carrier gas system and coupling substrate carrier to a loadport |
TWI475627B (zh) | 2007-05-17 | 2015-03-01 | Brooks Automation Inc | 基板運送機、基板處理裝置和系統、於基板處理期間降低基板之微粒污染的方法,及使運送機與處理機結合之方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04179146A (ja) * | 1990-11-09 | 1992-06-25 | Toshiba Ceramics Co Ltd | 半導体ウェハ収納ケース |
JPH04218941A (ja) * | 1990-08-31 | 1992-08-10 | Tadahiro Omi | 帯電物の中和装置 |
JPH0629373A (ja) * | 1992-03-13 | 1994-02-04 | Ebara Res Co Ltd | ストッカ |
-
1998
- 1998-03-04 JP JP6762598A patent/JP3305647B2/ja not_active Expired - Fee Related
- 1998-11-30 WO PCT/JP1998/005369 patent/WO1999028967A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04218941A (ja) * | 1990-08-31 | 1992-08-10 | Tadahiro Omi | 帯電物の中和装置 |
JPH04179146A (ja) * | 1990-11-09 | 1992-06-25 | Toshiba Ceramics Co Ltd | 半導体ウェハ収納ケース |
JPH0629373A (ja) * | 1992-03-13 | 1994-02-04 | Ebara Res Co Ltd | ストッカ |
Also Published As
Publication number | Publication date |
---|---|
JP3305647B2 (ja) | 2002-07-24 |
JPH11217119A (ja) | 1999-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0769322B1 (fr) | Procédé pour la purification de gaz avec un photocatalyseur | |
JP3939101B2 (ja) | 基板搬送方法および基板搬送容器 | |
EP0560379B1 (fr) | Magasin | |
KR100576758B1 (ko) | 반도체기판용 반송박스 | |
JP3305663B2 (ja) | 半導体基板用搬送ボックス | |
WO1999028967A1 (fr) | Boite de transfert d'une tranche en semi-conducteur | |
JP3460500B2 (ja) | 気体の清浄装置とそれを用いた密閉空間の清浄方法及び密閉空間 | |
EP1258917A1 (fr) | Procede et dispositif pouvant empecher l'oxydation a la surface d'un substrat | |
JP3429522B2 (ja) | 気体清浄化手段を有する搬送装置 | |
JP3303125B2 (ja) | 空間清浄化材及びそれを用いた空間清浄化方法 | |
JP3446985B2 (ja) | 気体の清浄方法及び装置 | |
JPH11147051A (ja) | 収納空間の清浄化方法及びその装置 | |
JP2000300936A (ja) | 除電用の負イオン含有清浄気体の取得方法及びその装置 | |
JP3797635B2 (ja) | 空間清浄化材及びそれを用いた空間清浄化方法 | |
JP3827263B2 (ja) | 基材又は基板用収納容器 | |
JP2722297B2 (ja) | 気体の清浄方法及び装置 | |
JP3661840B2 (ja) | 気体の清浄化ユニット装置及び清浄化方法 | |
JPH11285623A (ja) | 気体の清浄化方法及び装置 | |
JP3696037B2 (ja) | 気体の清浄化ユニット装置及び清浄化方法 | |
JP3770363B2 (ja) | 清浄機能付密閉空間とキャリアボックス | |
KR100485918B1 (ko) | 기체의청정화방법및장치 | |
JP2005329406A (ja) | 菌類を含む密閉空間の殺菌清浄方法及び殺菌清浄機能付密閉空間 | |
JPH08243434A (ja) | 空間の清浄方法及び装置 | |
JP2000189736A (ja) | エアフィルタ装置 | |
JPH11300232A (ja) | 粒子状物質の荷電装置と荷電方法及びその使用方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): DE FR GB |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase |
Ref country code: KR |
|
122 | Ep: pct application non-entry in european phase |