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WO1999026287A1 - Silicon film used as a substrate for semiconductor circuits in cards - Google Patents

Silicon film used as a substrate for semiconductor circuits in cards Download PDF

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Publication number
WO1999026287A1
WO1999026287A1 PCT/DE1998/003228 DE9803228W WO9926287A1 WO 1999026287 A1 WO1999026287 A1 WO 1999026287A1 DE 9803228 W DE9803228 W DE 9803228W WO 9926287 A1 WO9926287 A1 WO 9926287A1
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WO
WIPO (PCT)
Prior art keywords
chip
semiconductor
semiconductor wafer
wafer
passive side
Prior art date
Application number
PCT/DE1998/003228
Other languages
German (de)
French (fr)
Inventor
Jörg BORCHERT
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO1999026287A1 publication Critical patent/WO1999026287A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Silicon foil as a carrier of semiconductor circuits as part of cards
  • the invention relates to a method for producing a chip card and a semiconductor chip which is intended in particular for use in a chip card.
  • chip cards which have a chip made of silicon.
  • a disadvantage of the chip cards known in the prior art is that the complexity of the electrical circuit accommodated on the chip is limited because the maximum size of the chip is limited to approximately 25 mm 2 .
  • chip cards can be provided with semiconductor chips of particularly large area, wherein extensive circuit structures and even large-area memory arrangements can be provided on the semiconductor chip.
  • Detaching the connection between the handling chip and the semiconductor chip by passivating the adhesive layer, applying the semiconductor chip to a chip card carrier, in such a way that the passive side faces the chip card carrier, can also be carried out simultaneously or in the reverse order, to ensure flexible and accurate manufacturing.
  • Chip cards are namely in Operation frequently exposed to bending loads that are transferred to the chip embedded in the chip card.
  • tensile stresses which lead to crack formation in the chip can occur when the card is bent, particularly in the surface regions of the chip. If the chip is designed with a lower thickness, the tensile stresses in the surface areas of the chip are lower with an otherwise identical deflection of the chip card, so that the risk of cracking is reduced.
  • chips with a thickness of significantly less than 100 micrometers can be produced, which allows large chip dimensions.
  • the passive side of the semiconductor chip can be removed easily and conveniently.
  • the semiconductor chip can be removed on the passive side to a thickness of 20 micrometers to 50 micrometers. As a result, a film-like semiconductor chip can even be produced.
  • the semiconductor wafer thinned out in this way can then be divided into individual semiconductor chips on the semiconductor wafer, which chips are inserted onto a chip card carrier or directly into a chip card, the passive side facing one side of the chip card carrier.
  • the connection between the handling chip and the semiconductor chip is preferably released by passivating the adhesive layer before the semiconductor chip is introduced onto a chip card carrier.
  • the chip card can be finished by overmolding the semiconductor chip or by lamination processes. Due to the favorable mechanical properties, the semiconductor chip can use almost the entire surface of the chip card.
  • the passive side of the semiconductor wafer can be removed at least partially by means of chemical and / or mechanical thin grinding.
  • the removal can also take place in at least a wet chemical manner.
  • a basic idea essential to the invention is to reduce the semiconductor wafer to film thickness by back etching, so that silicon as the base material loses its brittle material properties.
  • This backside etching to a few micrometers allows the production of silicon foils, which are then used as component foils, for example, in card production.
  • the film is then part of the chip card.
  • the chip card takes over the task of the housing, so that chip sizes are possible that theoretically can go up to the card size.
  • the film is then connected to the outside world by only form-fitting electrical contacts.
  • the contacts can be printed on, implemented with a BGA technique or provided as a module. The electrical contacts then only have the function of connections and no longer a mechanical protective function, as in the modules used today.
  • the invention also includes a semiconductor chip, in particular for use in a chip card, which has a thickness of less than approximately 100 micrometers, the semiconductor chip being produced by a method according to the invention, which in particular has the following steps: Providing a semiconductor wafer with a large active side,
  • the semiconductor wafer according to the invention can subsequently be divided into at least one semiconductor chip, in particular by a mechanical method such as sawing and / or by a thermal method such as laser cutting, the handling wafer preferably not being destroyed in the process.
  • the step of removing the passive side of the semiconductor chip down to a thickness of 100 micrometers the step of removing the passive side from a thickness of 20 micrometers to 50 micrometers can be provided, the removal being carried out at least partially by means of chemical and / or mechanical thin grinding or at least partially in a wet chemical manner.
  • the semiconductor chip according to the invention is characterized by high mechanical flexibility.
  • FIG. 1 shows a chip card according to the invention in cross section
  • Figure 2 shows another chip card according to the invention in
  • FIG. 3 shows a cross section through a semiconductor chip according to the invention.
  • FIG. 1 shows a cross section through a chip card 1 according to the invention, which is divided into a card body 2, a chip film 3 and a contact area 4.
  • the chip film 3 is extrusion-coated with plastic in a casting technique.
  • the card body 2 is made in one piece, so that the chip film 3 is essentially completely enveloped by the card body.
  • the contact area 4 is provided in a form-fitting manner in the card body 2 and represents the connection between the chip film 3 and the outside world.
  • electrical contacts 5, which are inserted in a module 6, take over the electrical connection. Due to the thin design of the chip film 3, the chip card 1 is highly flexible and can be bent to a large extent without the chip film 3 showing cracks in one of its surface areas.
  • FIG. 2 shows a further chip card 10 according to the invention, which corresponds in its essential parts to the chip card 1 from FIG. 1. The same components are therefore given the same reference numbers. Deviating from FIG. 1, the chip film 3 has been finished in a laminating technique.
  • chip card 10 has a card body 11 which is constructed in multiple layers.
  • the card body 11 has a base layer 12 on the underside of the card body and a cover layer 13 on the top of the card body 11.
  • the chip film 3 is arranged between the support layer 12 and the cover layer 13, with laminating films 14 being provided as connection areas in edge regions of the card body 11 in order to make the card body 11 completely closed.
  • the passive side of the chip film 3 is attached to the base layer 12.
  • the laminating foils 14 and finally the cover layer 13 are then applied to the chip foil 3 and the support layer 12.
  • the contact area 4 is inserted into the cover layer 13.
  • FIG. 3 shows a semiconductor chip 20 according to the invention, which is attached to a semiconductor chip 22 via an adhesive layer 21.
  • An active side of the semiconductor chip 20 faces the semiconductor chip 22, while a passive side of the semiconductor chip 20 points away from the semiconductor chip 22.
  • An electrically active structure is provided in the active side of the semiconductor chip 20, which is indicated by a thin dash line.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Credit Cards Or The Like (AREA)

Abstract

A semiconductor chip (3) which is used in a chip card (1) has a thickness of less than approximately 100 νm. According to the inventive method, the chip cards (1) can be provided with semiconductor chips (3) having especially large-surfaces, whereby extensive circuit structures and even large-surface storage structures can be provided semiconductor chips (3).

Description

Beschreibungdescription
Siliziumfolie als Träger von Halbleiterschaltungen als Teil von KartenSilicon foil as a carrier of semiconductor circuits as part of cards
Die Erfindung betrifft ein Verfahren zur Herstellung einer Chipkarte sowie einen Halbleiter-Chip, der insbesondere zur Verwendung in einer Chipkarte bestimmt ist.The invention relates to a method for producing a chip card and a semiconductor chip which is intended in particular for use in a chip card.
Im Stand der Technik sind Chipkarten bekannt, die einen aus Silizium hergestellten Chip aufweisen. Bei den im Stand der Technik bekannten Chipkarten ist von Nachteil, daß die Komplexität der auf dem Chip untergebrachten elektrischen Schaltung limitiert ist, weil die maximale Größe des Chips auf ca. 25 mm2 begrenzt ist.In the prior art, chip cards are known which have a chip made of silicon. A disadvantage of the chip cards known in the prior art is that the complexity of the electrical circuit accommodated on the chip is limited because the maximum size of the chip is limited to approximately 25 mm 2 .
Es ist daher Aufgabe der Erfindung, eine Chipkarte sowie ein Verfahren zur Herstellung einer Chipkarte bereitzustellen, mit dem sich intelligentere Chipkarten herstellen lassen. Es ist weiterhin Aufgabe der Erfindung, einen Halbleiter-Wafer bzw. einen daraus hergestellten Halbleiter-Chip bereitzustellen, mit dem sich intelligentere Chipkarten herstellen lassen.It is therefore an object of the invention to provide a chip card and a method for producing a chip card with which more intelligent chip cards can be produced. It is also an object of the invention to provide a semiconductor wafer or a semiconductor chip produced therefrom, with which more intelligent chip cards can be produced.
Diese Aufgabe wird gemäß der Erfindung dadurch gelöst, daß das Verfahren zur Herstellung einer Chipkarte die folgenden Schritte aufweist:This object is achieved according to the invention in that the method for producing a chip card has the following steps:
Vorsehen eines Halbleiter-Wafers mit einer aktiven Seite und mit einer passiven Seite, - Einbringen von großflächigen elektrisch aktiven Strukturen in die aktive Seite, und zwar mittels bekannter Verfahren wie z.B. Dotierung,Providing a semiconductor wafer with an active side and with a passive side, introducing large-area electrically active structures into the active side, using known methods such as e.g. Endowment,
Glätten der aktiven Seite des Halbleiter-Chips insbesondere mit einem CMP-Verfahren, - Aufbringen einer reversiblen Klebstoffschicht auf die aktive Seite, Aufbringen des Halbleiter-Wafers auf einen Handling- Wafer, und zwar derart, daß die Klebstoffschicht zwischen der aktiven Seite des Halbleiter-Wafers und dem Handling- Wafer gelegen ist, - Abtragen der passiven Seite des Halbleiter-Wafer bis auf eine Dicke von circa 100 Mikrometern oder weniger, Aufteilen des Halbleiter-Wafers in wenigstens einen Halbleiter-Chip, insbesondere durch ein mechanisches Verfahren wie Sägen und/oder durch ein thermisches Verfahren wie Laserschneiden, wobei der Handling-Wafer dabei vorzugsweise nicht zerstört wird,Smoothing the active side of the semiconductor chip, in particular using a CMP method, applying a reversible adhesive layer to the active side, Applying the semiconductor wafer to a handling wafer in such a way that the adhesive layer is located between the active side of the semiconductor wafer and the handling wafer, removing the passive side of the semiconductor wafer to a thickness of approximately 100 Micrometers or less, dividing the semiconductor wafer into at least one semiconductor chip, in particular by a mechanical method such as sawing and / or by a thermal method such as laser cutting, the handling wafer preferably not being destroyed in the process,
Lösen der Verbindung zwischen Handling-Chip und Halbleiter-Chip durch Passivierung der Klebstoffschicht, Aufbringen des Halbleiter-Chips auf einen Chipkartenträ- ger, und zwar derart, daß die passive Seite dem Chipkartenträger zugewandt ist, Herstellen der vollständigen Chipkarte.Detach the connection between the handling chip and the semiconductor chip by passivating the adhesive layer, applying the semiconductor chip to a chip card carrier in such a way that the passive side faces the chip card carrier, producing the complete chip card.
Mit dem erfindungsgemäßen Verfahren lassen sich Chipkarten mit besonders großflächig ausgebildeten Halbleiter-Chips versehen, wobei auf dem Halbleiter-Chip umfangreiche Schaltungsstrukturen und sogar großflächige Speicheranordnungen vorgesehen werden können.With the method according to the invention, chip cards can be provided with semiconductor chips of particularly large area, wherein extensive circuit structures and even large-area memory arrangements can be provided on the semiconductor chip.
Die folgenden Schritte des erfindungsgemäßen Verfahrens:The following steps of the method according to the invention:
Lösen der Verbindung zwischen Handling-Chip und Halbleiter-Chip durch Passivierung der Klebstoffschicht , Aufbringen des Halbleiter-Chips auf einen Chipkartenträger, und zwar derart, daß die passive Seite dem Chip- kartenträger zugewandt ist, können auch gleichzeitig oder in vertauschter Reihenfolge durchgeführt werden, um eine flexible und genaue Herstellung zu gewährleisten.Detaching the connection between the handling chip and the semiconductor chip by passivating the adhesive layer, applying the semiconductor chip to a chip card carrier, in such a way that the passive side faces the chip card carrier, can also be carried out simultaneously or in the reverse order, to ensure flexible and accurate manufacturing.
Die Erfindung beruht auf der Erkenntnis, daß die Größe der im Stand der Technik bekannten Chips und damit deren Komplexität durch deren Stärke begrenzt war. Chipkarten werden nämlich im Betrieb häufig Biegebelastungen ausgesetzt, die sich auf den in der Chipkarte eingelagerten Chip übertragen. Bei dem im Stand der Technik bekannten Stärken von circa 150 Mikrometern bis 185 Mikrometern der verwendeten Chips können bei einer Durchbiegung der Karte gerade in den Oberflächenbereichen des Chips Zugspannungen entstehen, die zur einer Rißbildung im Chip führen. Bei einer Ausbildung des Chips mit einer geringeren Stärke entstehen bei einer ansonsten gleichen Durchbiegung der Chipkarte geringere Zugspannungen in Ober- flächenbereichen des Chips, so daß die Rißgefahr verringert wird. Bei dem erfindungsgemäßen Verfahren lassen sich Chips mit einer Stärke von deutlich weniger als 100 Mikrometern herstellen, was große Chipabmessungen gestattet.The invention is based on the knowledge that the size of the chips known in the prior art and thus their complexity was limited by their strength. Chip cards are namely in Operation frequently exposed to bending loads that are transferred to the chip embedded in the chip card. Given the thicknesses of approximately 150 micrometers to 185 micrometers of the chips used, which are known in the prior art, tensile stresses which lead to crack formation in the chip can occur when the card is bent, particularly in the surface regions of the chip. If the chip is designed with a lower thickness, the tensile stresses in the surface areas of the chip are lower with an otherwise identical deflection of the chip card, so that the risk of cracking is reduced. In the method according to the invention, chips with a thickness of significantly less than 100 micrometers can be produced, which allows large chip dimensions.
Dabei ist durch das Glätten der aktiven Seite des Halbleiter- Wafers und durch das großflächige Einbringen von elektrisch aktiven Strukturen in die aktive Seite ein zuverlässiges Vorsehen der elektrisch aktiven Strukturen im Halbleiter-Wafer möglich. Wenn nachfolgend der so strukturierte Halbleiter- Wafer mit einer reversiblen Klebstoffschicht an seiner aktiven Seite auf einem Handling-Wafer befestigt wird, läßt sich die passive Seite des Halbleiter-Chips bequem und einfach abtragen. Gemäß der Erfindung kann der Halbleiter-Chip auf der passiven Seite bis zu einer Dicke von 20 Mikrometern bis 50 Mikrometern abgetragen werden. Dadurch läßt sich sogar ein folienartiger Halbleiter-Chip herstellen.Reliable provision of the electrically active structures in the semiconductor wafer is possible by smoothing the active side of the semiconductor wafer and by introducing electrically active structures over a large area into the active side. If the semiconductor wafer structured in this way is subsequently attached to a handling wafer on its active side with a reversible adhesive layer, the passive side of the semiconductor chip can be removed easily and conveniently. According to the invention, the semiconductor chip can be removed on the passive side to a thickness of 20 micrometers to 50 micrometers. As a result, a film-like semiconductor chip can even be produced.
Anschließend kann der so ausgedünnte Halbleiter-Wafer nach auf dem Halbleiter-Wafer in einzelne Halbleiter-Chips aufge- teilt werden, die auf einen Chipkartenträger oder direkt in eine Chipkarte eingebracht werden, wobei die passive Seite einer Seite des Chipkartenträgers zugewandt ist. Vorzugsweise bereits vor dem Einbringen des Halbleiter-Chips auf einen Chipkartenträger wird die Verbindung zwischen dem Handling- Chip und dem Halbleiter-Chip durch Passivierung der Klebstoffschicht gelöst. Die Chipkarte kann durch Umspritzen des Halbleiter-Chips oder durch Laminierverfahren fertiggestellt werden. Der Halbleiter-Chip kann bedingt durch die günstigen mechanischen Eigenschaften fast die gesamte Fläche der Chipkarte nutzen.The semiconductor wafer thinned out in this way can then be divided into individual semiconductor chips on the semiconductor wafer, which chips are inserted onto a chip card carrier or directly into a chip card, the passive side facing one side of the chip card carrier. The connection between the handling chip and the semiconductor chip is preferably released by passivating the adhesive layer before the semiconductor chip is introduced onto a chip card carrier. The chip card can be finished by overmolding the semiconductor chip or by lamination processes. Due to the favorable mechanical properties, the semiconductor chip can use almost the entire surface of the chip card.
Das Abtragen der passiven Seite des Halbleiter-Wafers kann dabei wenigstens teilweise mittels chemischem und/oder mechanischem Dünnschleifen erfolgen. In einem Endschritt des Ab- tragens des Halbleiter-Wafers kann das Abtragen auch auf we- nigstens naßchemische Weise erfolgen. Ein Vorteil des Abtra- gens auf naßchemische Weise besteht im wesentlichen darin, daß der Halbleiter-Wafer beim Abtragen sehr geringen extern aufgebrachten mechanischen Spannung ausgesetzt ist, was dessen Haltbarkeit verbessert.The passive side of the semiconductor wafer can be removed at least partially by means of chemical and / or mechanical thin grinding. In a final step of removing the semiconductor wafer, the removal can also take place in at least a wet chemical manner. An advantage of removal in a wet chemical manner is essentially that the semiconductor wafer is exposed to very little externally applied mechanical stress during removal, which improves its durability.
Eine erfindungswesentliche Grundidee besteht darin, den Halbleiter-Wafer durch Rückseitenätzung auf Folienstärke zu reduzieren, so daß Silzium als Basismaterial seine spröden Mate- rialeigenschaften verliert. Diese Rückseitenätzung auf wenige Mikrometer erlaubt die Herstellung von Siliziumfolien, die dann als Bauelement-Folien beispielsweise in die Kartenproduktion eingehen. Die Folie ist dann Teil der Chipkarte. Die Chipkarte übernimmt die Aufgabe des Gehäuses, so daß Chipgrößen möglich sind, die theoretisch bis nahe zur Kartengröße gehen können. Die Folie wird danach durch nur formschlüssig ausgeführte elektrische Kontakte mit der Außenwelt verbunden. Dabei können die Kontakte aufgedruckt sein, mit einer BGA- Technik ausgeführt sein oder als Modul vorgesehen sein. Die elektrischen Kontakte haben dann nur noch die Funktion von Anschlüssen und nicht mehr die einer mechanischen Schutzfunktion, wie bei den heute verwendeten Modulen.A basic idea essential to the invention is to reduce the semiconductor wafer to film thickness by back etching, so that silicon as the base material loses its brittle material properties. This backside etching to a few micrometers allows the production of silicon foils, which are then used as component foils, for example, in card production. The film is then part of the chip card. The chip card takes over the task of the housing, so that chip sizes are possible that theoretically can go up to the card size. The film is then connected to the outside world by only form-fitting electrical contacts. The contacts can be printed on, implemented with a BGA technique or provided as a module. The electrical contacts then only have the function of connections and no longer a mechanical protective function, as in the modules used today.
Die Erfindung umfaßt auch einen Halbleiter-Chip insbesondere zur Verwendung in einer Chipkarte, der eine Dicke von weniger als circa 100 Mikrometern aufweist, wobei der Halbleiter-Chip durch ein erfindungsgemäßes Verfahren hergestellt ist, daß insbesondere die folgenden Schritte aufweist : Vorsehen eines Halbleiter-Wafers mit einer großflächigen aktiven Seite,The invention also includes a semiconductor chip, in particular for use in a chip card, which has a thickness of less than approximately 100 micrometers, the semiconductor chip being produced by a method according to the invention, which in particular has the following steps: Providing a semiconductor wafer with a large active side,
Glätten der aktiven Seite des Halbleiter-Wafers insbesondere mit einem CMP-Verf hren, - Einbringen von elektrisch aktiven Strukturen in die aktive Seite mittels Dotierung,Smoothing the active side of the semiconductor wafer, in particular using a CMP method, introducing electrically active structures into the active side by means of doping,
Aufbringen einer reversiblen Klebstoffschicht auf die aktive Seite,Applying a reversible adhesive layer on the active side,
Aufringen des Halbleiter-Chips auf einen Handling-Chip, und zwar derart, daß die Klebstoffschicht zwischen dem Halbleiter-Chip und dem Handling-Chip liegt, Abtragen der passiven Seite des Halbleiter-Chips bis auf eine Stärke von circa 100 Mikrometern.Applying the semiconductor chip to a handling chip, in such a way that the adhesive layer lies between the semiconductor chip and the handling chip, removing the passive side of the semiconductor chip to a thickness of approximately 100 micrometers.
Der erfindungsgemäße Halbleiter-Wafer kann nachfolgend in wenigstens einen Halbleiter-Chip aufgeteilt werden, insbesondere durch ein mechanisches Verfahren wie Sägen und/oder durch ein thermisches Verfahren wie Laserschneiden, wobei der Hand- ling-Wafer dabei vorzugsweise nicht zerstört wird.The semiconductor wafer according to the invention can subsequently be divided into at least one semiconductor chip, in particular by a mechanical method such as sawing and / or by a thermal method such as laser cutting, the handling wafer preferably not being destroyed in the process.
Dabei kann nach dem Schritt des Abtragens der passiven Seite des Halbleiter-Chips bis auf eine Stärke von 100 Mikrometern der Schritt des Abtragens der passiven Seite von einer Stärke von 20 Mikrometern bis 50 Mikrometern vorgesehen sein, wobei das Abtragen wenigstens teilweise mittels chemischem und/oder mechanischem Dünnschleifen oder auch wenigstens auch teilweise auf naßchemische Weise erfolgen kann.After the step of removing the passive side of the semiconductor chip down to a thickness of 100 micrometers, the step of removing the passive side from a thickness of 20 micrometers to 50 micrometers can be provided, the removal being carried out at least partially by means of chemical and / or mechanical thin grinding or at least partially in a wet chemical manner.
Der erfindungsgemäße Halbleiter-Chip zeichnet sich durch eine hohe mechanische Flexibilität aus.The semiconductor chip according to the invention is characterized by high mechanical flexibility.
Die Erfindung ist in der Zeichnung anhand von Ausführungs- beispielen dargestellt.The invention is illustrated in the drawing using exemplary embodiments.
Figur 1 zeigt eine erfindungsgemäße Chipkarte im Querschnitt, Figur 2 zeigt eine weitere erfindungsgemäße Chipkarte imFIG. 1 shows a chip card according to the invention in cross section, Figure 2 shows another chip card according to the invention in
Querschnitt, und Figur 3 zeigt einen Querschnitt durch einen erfindungs- gemäßen Halbleiter-Chip.Cross section, and FIG. 3 shows a cross section through a semiconductor chip according to the invention.
Figur 1 zeigt einen Querschnitt durch eine erfindungsgemäße Chipkarte 1, die sich in einen Kartenkörper 2, in eine Chipfolie 3 und in einen Kontaktbereich 4 gliedert. Die Chipfolie 3 ist dabei in einer Gießtechnik mit Kunststoff umspritzt.FIG. 1 shows a cross section through a chip card 1 according to the invention, which is divided into a card body 2, a chip film 3 and a contact area 4. The chip film 3 is extrusion-coated with plastic in a casting technique.
Der Kartenkörper 2 ist einstückig ausgeführt, so daß die Chipfolie 3 im wesentlichen vollständig vom Kartenkörper umhüllt ist. Der Kontaktbereich 4 ist formschlüssig im Kartenkörper 2 vorgesehen und stellt die Verbindung zwischen der Chipfolie 3 und der Außenwelt dar. Dabei übernehmen elektrische Kontakte 5, die in ein Modul 6 eingesetzt sind, die elektrische Verbindung. Aufgrund der dünnen Ausbildung der Chipfolie 3 ist die Chipkarte 1 hochflexibel und kann in weitem Ausmaß durchgebogen werden, ohne daß die Chipfolie 3 in einem ihrer Oberflächenbereiche Risse zeigt.The card body 2 is made in one piece, so that the chip film 3 is essentially completely enveloped by the card body. The contact area 4 is provided in a form-fitting manner in the card body 2 and represents the connection between the chip film 3 and the outside world. In this case, electrical contacts 5, which are inserted in a module 6, take over the electrical connection. Due to the thin design of the chip film 3, the chip card 1 is highly flexible and can be bent to a large extent without the chip film 3 showing cracks in one of its surface areas.
Figur 2 zeigt eine weitere erfindungsgemäße Chipkarte 10, die in ihren wesentlichen Teilen der Chipkarte 1 aus Figur 1 entspricht. Den gleichen Bestandteilen sind daher gleiche Be- zugsziffern gegeben. Abweichend von Figur 1 ist die Chipfolie 3 ist in einer Laminiertechnik fertiggestellt worden.FIG. 2 shows a further chip card 10 according to the invention, which corresponds in its essential parts to the chip card 1 from FIG. 1. The same components are therefore given the same reference numbers. Deviating from FIG. 1, the chip film 3 has been finished in a laminating technique.
Im Unterschied zur Chipkarte 1 weist die Chipkarte 10 einen Kartenkörper 11 auf, der mehrschichtig aufgebaut ist. Dazu weist der Kartenkörper 11 eine Tragschicht 12 an der Unterseite des Kartenkörper sowie eine Deckschicht 13 an der Oberseite des Kartenkörpers 11 auf. Die Chipfolie 3 ist zwischen der Tragschicht 12 und der Deckschicht 13 angeordnet, wobei in Randbereichen des Kartenkörpers 11 Laminierfolien 14 als Verbindungsbereiche vorgesehen sind, um den Kartenkörper 11 vollständig geschlossen zu gestalten. Bei der Herstellung der Chipkarte 10 wird die Chipfolie 3 mit ihrer passiven Seite auf der Tragschicht 12 befestigt. Daraufhin werden die Laminierfolien 14 und schließlich die Deckschicht 13 auf die Chipfolie 3 und die Tragschicht 12 auf ge- bracht. In einem abschließenden Schritt wird der Kontaktbereich 4 in die Deckschicht 13 eingesetzt.In contrast to chip card 1, chip card 10 has a card body 11 which is constructed in multiple layers. For this purpose, the card body 11 has a base layer 12 on the underside of the card body and a cover layer 13 on the top of the card body 11. The chip film 3 is arranged between the support layer 12 and the cover layer 13, with laminating films 14 being provided as connection areas in edge regions of the card body 11 in order to make the card body 11 completely closed. When the chip card 10 is manufactured, the passive side of the chip film 3 is attached to the base layer 12. The laminating foils 14 and finally the cover layer 13 are then applied to the chip foil 3 and the support layer 12. In a final step, the contact area 4 is inserted into the cover layer 13.
Figur 3 zeigt einen erfindungsgemäßen Halbleiter-Chip 20, der über eine Klebstoffschicht 21 auf einem Halbleiter-Chip 22 befestigt ist. Dabei ist eine aktive Seite des Halbleiter- Chips 20 dem Halbleiter-Chip 22 zugewandt, während eine passive Seite des Halbleiter-Chips 20 vom Halbleiter-Chip 22 wegweist. In der aktiven Seite des Halbleiter-Chips 20 ist eine elektrisch aktive Struktur vorgesehen, daß durch eine dünne Strichlinie angedeutet ist. FIG. 3 shows a semiconductor chip 20 according to the invention, which is attached to a semiconductor chip 22 via an adhesive layer 21. An active side of the semiconductor chip 20 faces the semiconductor chip 22, while a passive side of the semiconductor chip 20 points away from the semiconductor chip 22. An electrically active structure is provided in the active side of the semiconductor chip 20, which is indicated by a thin dash line.

Claims

Patentansprüche claims
1. Verfahren zur Herstellung einer Chipkarte (1; 10), das die folgenden Schritte aufweist: - Vorsehen eines Halbleiter-Wafers (20) mit einer aktiven Seite und einer passiven Seite,1. A method for producing a chip card (1; 10), comprising the following steps: providing a semiconductor wafer (20) with an active side and a passive side,
Einbringen von elektrisch aktiven Strukturen in die aktive Seite insbesondere mittels Dotierung, Glätten der aktiven Seite des Halbleiter-Wafers (20) insbesondere mit einem CMP-Verfahren,Introducing electrically active structures into the active side, in particular by means of doping, smoothing the active side of the semiconductor wafer (20), in particular using a CMP method,
Aufbringen einer reversiblen Klebstoffschicht (21) auf die aktive Seite,Applying a reversible adhesive layer (21) to the active side,
Aufbringen des Halbleiter-Wafers (20) auf einen Hand- ling-Wafer (22) , und zwar derart, daß die Klebstoff- schicht (21) zwischen dem Halbleiter-Wafer (20) und dem Handling-Wafer (22) liegt,Applying the semiconductor wafer (20) to a handling wafer (22) in such a way that the adhesive layer (21) lies between the semiconductor wafer (20) and the handling wafer (22),
Abtragen der passiven Seite des Halbleiter-Wafer (20) bis auf eine Dicke von ca. lOOμm oder weniger, Aufteilen des Halbleiter-Wafers (20) in wenigstens ei- nen Halbleiter-Chip (3) ,Removing the passive side of the semiconductor wafer (20) to a thickness of approximately 100 μm or less, dividing the semiconductor wafer (20) into at least one semiconductor chip (3),
Lösen der Verbindung zwischen Handling-Wafer (22) und Halbleiter-Chip (3) durch Passivierung der Klebstoff- schicht (21) , Aufbringen des Halbleiter-Chips (3) auf einen Chip- kartenträger (12) , und zwar derart, daß die passive Seite dem Chipkartenträger (12) zugewandt ist.Detach the connection between the handling wafer (22) and the semiconductor chip (3) by passivating the adhesive layer (21), applying the semiconductor chip (3) to a chip card carrier (12), in such a way that the passive side facing the chip card carrier (12).
2. Verfahren zur Herstellung einer Chipkarte gemäß Anspruch l, dadurch gekennzeichnet, daß nach dem Schritt des Abtragens der passiven Seite des Halbleiter-Chips (3; 20) bis auf eine Dicke von ca. lOOμm der Schritt des Abtragens der passiven Seite des Halbleiter-Chips (3; 20) bis auf eine Dicke von ca. 20μm bis 50μm vorgesehen ist. 2. A method for producing a chip card according to claim 1, characterized in that after the step of removing the passive side of the semiconductor chip (3; 20) up to a thickness of approximately 100 μm, the step of removing the passive side of the semiconductor Chips (3; 20) is provided to a thickness of about 20 microns to 50 microns.
3. Verfahren zur Herstellung einer Chipkarte gemäß Anspruch 1 oder Anspruch 2 , dadurch gekennzeichnet, daß3. A method for producing a chip card according to claim 1 or claim 2, characterized in that
Schritt des Abtragens der passiven Seite des Halbleiter- Chips (3; 20) wenigstens teilweise mittels chemischem und/oder mechanischem Dünnschleifen er olgt.Step of removing the passive side of the semiconductor chip (3; 20) at least partially by means of chemical and / or mechanical thin grinding, it follows.
4. Verfahren zur Herstellung einer Chipkarte gemäß einem der Ansprüche 1 bis 3 , dadurch gekennzeichnet, daß4. A method for producing a chip card according to one of claims 1 to 3, characterized in that
Schritt des Abtragens der passiven Seite des Halbleiter- Chips (3; 20) wenigstens teilweise auf naßchemische Weise erfolgt .Step of removing the passive side of the semiconductor chip (3; 20) is carried out at least partially in a wet chemical manner.
5. Halbleiter-Chip, insbesondere zur Verwendung in einer Chipkarte, mit einer Dicke von weniger als ca. lOOμm, hergestellt durch ein Verfahren, das die folgenden Schritte aufweist:5. Semiconductor chip, in particular for use in a chip card, with a thickness of less than approximately 100 μm, produced by a method which has the following steps:
Vorsehen eines Halbleiter-Wafers (20) mit einer akti- ven Seite und einer passiven Seite,Providing a semiconductor wafer (20) with an active side and a passive side,
Einbringen von elektrisch aktiven Strukturen in die aktive Seite insbesondere mittels Dotierung, Glätten der aktiven Seite des Halbleiter-Wafers (20) insbesondere mit einem CMP-Verfahren, - Aufbringen einer reversiblen Klebstoffschicht (21) auf die aktive Seite,Introducing electrically active structures into the active side, in particular by means of doping, smoothing the active side of the semiconductor wafer (20), in particular using a CMP method, applying a reversible adhesive layer (21) to the active side,
Aufbringen des Halbleiter-Wafers (20) auf einen Handling-Wafer (22) , und zwar derart, daß die Klebstoff- schicht (21) zwischen dem Halbleiter-Wafer (20) und dem Handling-Wafer (22) liegt,Applying the semiconductor wafer (20) to a handling wafer (22) in such a way that the adhesive layer (21) lies between the semiconductor wafer (20) and the handling wafer (22),
Abtragen der passiven Seite des Halbleiter-Wafer (20) bis auf eine Dicke von ca. lOOμm oder weniger, Aufteilen des Halbleiter-Wafers (20) in wenigstens einen Halbleiter-Chip (3) . Removing the passive side of the semiconductor wafer (20) to a thickness of approximately 100 μm or less, dividing the semiconductor wafer (20) into at least one semiconductor chip (3).
6. Halbleiter-Chip nach Anspruch 5, dadurch gekennzeich et, daß das Verfahren zu seiner Herstellung nach dem Schritt des Abtragens der passiven Seite des Halbleiter-Wafers (20) bis auf eine Dicke von ca. lOOμm der Schritt des Abtragens der passiven Seite des Halbleiter-Wafers (20) bis auf eine Dicke von ca. 20μm bis 50μm vorgesehen ist.6. A semiconductor chip according to claim 5, characterized in that the method for its manufacture after the step of removing the passive side of the semiconductor wafer (20) to a thickness of approximately 100 μm, the step of removing the passive side of the Semiconductor wafers (20) are provided down to a thickness of approximately 20 μm to 50 μm.
7. Halbleiter-Chip nach Anspruch 5 oder Anspruch 6, dadurch gekennzeichne , daß bei dem Verfahren zu seiner Herstellung der Schritt des Abtragens der passiven Seite des Halbleiter-Wafers (20) wenigstens teilweise mittels chemischem und/oder mechanischem Dünnschleifen erfolg .7. A semiconductor chip according to claim 5 or claim 6, characterized in that in the method for its production, the step of removing the passive side of the semiconductor wafer (20) takes place at least partially by means of chemical and / or mechanical thin grinding.
8. Halbleiter-Chip nach einem der Ansprüche 5 bis 7, dadurch gekennzeichnet, daß bei dem Verfahren zu seiner Herstellung der Schritt des Abtragens der passiven Seite des Halbleiter-Wafers (20) wenigstens teilweise auf naßchemische Weise erfolgt. 8. Semiconductor chip according to one of claims 5 to 7, characterized in that in the method for its production, the step of removing the passive side of the semiconductor wafer (20) is carried out at least partially in a wet chemical manner.
PCT/DE1998/003228 1997-11-13 1998-11-05 Silicon film used as a substrate for semiconductor circuits in cards WO1999026287A1 (en)

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