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WO1999022437A1 - Convertisseur d'energie - Google Patents

Convertisseur d'energie Download PDF

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Publication number
WO1999022437A1
WO1999022437A1 PCT/JP1997/003890 JP9703890W WO9922437A1 WO 1999022437 A1 WO1999022437 A1 WO 1999022437A1 JP 9703890 W JP9703890 W JP 9703890W WO 9922437 A1 WO9922437 A1 WO 9922437A1
Authority
WO
WIPO (PCT)
Prior art keywords
power converter
bus
semiconductor
module
power
Prior art date
Application number
PCT/JP1997/003890
Other languages
English (en)
Japanese (ja)
Inventor
Syuichi Sekiguchi
Kenichi Onda
Masahiro Tobise
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1997/003890 priority Critical patent/WO1999022437A1/fr
Publication of WO1999022437A1 publication Critical patent/WO1999022437A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Definitions

  • the present invention relates to a power converter using a semiconductor switching element, and more particularly to a power converter used for high power.
  • Power converters for general industrial use and for large power may be equipped with a spare module so that operation can be resumed in a short time even if a circuit operation failure such as a short circuit of a semiconductor element occurs. Therefore, in a large-capacity converter with an output exceeding 1 MVA, the weight of the module itself increases.In consideration of the safety of the module replacement work, the module is placed close to the ground plane and the Modules are placed side by side without stacking. That is, the configuration of the conversion device has a horizontally long shape. In addition, the module replacement work will be pulled out from the front due to the installation area of the converter.
  • the DC bus was arranged on the upper surface of the module so as to minimize the wiring distance to the smoothing capacitor arranged on the upper surface of the module. Therefore, Oite the conventional power conversion apparatus, the distance from the DC bus to the module unit becomes long, inverter circuit or the converter circuit in the wiring Indakutansu off the c Therefore self extinguishing type semiconductor device which has increased the In such a case, there is a problem that the jump voltage applied to the self-extinguishing semiconductor device becomes high due to the energy stored in the wiring inductance. to solve this problem, It was necessary to add a capacitor to absorb the energy stored in the wiring inductance, which not only increased the size of the circuit, but also increased the circuit loss due to switching.
  • the present invention has been made in order to solve such a problem, and in particular, to reduce the wiring inductance of a wiring conductor for connecting a DC bus and a module unit, which is closely related to the applied voltage of a semiconductor switching element. It aims to obtain a compact, low-cost, low-loss power converter. Disclosure of the invention
  • the present invention provides a power converter for converting power to and from a power line having a plurality of phases by using a plurality of modules having semiconductor elements.
  • a DC bus group for transmitting DC power between modules is provided, and the DC bus groups are arranged at the height from the lowermost surface to the uppermost surface of the module unit, thereby reducing wiring inductance and reducing turn-off time. This is to suppress the surge voltage.
  • a DC bus group is arranged at a height from the lowermost surface to the uppermost surface of the semiconductor stack at a junction provided with a semiconductor stack in which the module unit is pressed against a semiconductor element.
  • the wiring inductance can be reduced.
  • the connection between the neutral bus and the semiconductor stack is shorter than the connection between the other bus and the semiconductor stack, thereby reducing the wiring inductance. It is intended to be able to reduce.
  • a smoothing capacitor is provided between DC buses.
  • the connection lines connecting the smoothing capacitor and the DC bus are arranged so that the current directions are opposite to each other and with a space insulation distance, thereby reducing the rewiring inductance. It is intended to be able to reduce.
  • a DC bus group for transmitting input / output power between the modules wherein the semiconductor stack is disposed closer to the DC bus side than a center in a depth direction of the module portion, thereby reducing a wiring inductance. This can be reduced.
  • At least a semiconductor stack in which a semiconductor element group including at least a semiconductor switching element is press-contacted, a module section having a driver circuit for controlling the switching of the semiconductor switching element, and a plurality of the module sections are provided. At least one of a forward converter for converting AC to DC or an inverse converter for inversely converting DC to AC, and a smoothing capacitor unit for smoothing the DC voltage.
  • a power conversion device having a first DC bus group that supplies a DC voltage, and a second DC bus group that connects the first DC bus and the smoothing capacitor unit,
  • the projection plane of the first DC bus group with respect to the semiconductor stack is arranged so as to overlap between both ends on the center axis of the semiconductor stack, whereby the wiring inductance can be reduced. It is the one that was adopted.
  • FIG. 1 is a perspective view of the power converter of the present invention as viewed from the back.
  • FIG. 2 shows an inverter or a comparator using the switching element of the present invention.
  • FIG. 9 is a circuit diagram of one phase.
  • FIG. 3 is a diagram showing the relationship between the switching mode of the three-level inverter and the output voltage.
  • FIG. 4 shows a current-voltage waveform applied to the switching element when the switching element is turned off.
  • FIG. 5 is a side view of a semiconductor stack showing an embodiment of the present invention.
  • FIG. 6 is a diagram showing a connection relationship between a semiconductor stack and a DC bus in the module.
  • FIG. 7 is a diagram showing an arrangement relationship between a module and a DC bus.
  • FIG. 8 is a diagram showing an arrangement relationship between a module and a DC bus.
  • FIG. 9 is a diagram showing a connection relationship between the semiconductor stack of the present invention and a DC bus.
  • FIG. 10 is a diagram for explaining a circuit operation including a snubber circuit at the time of turn-off of a self-extinguishing semiconductor element which does not require an anode reactor according to the present invention.
  • FIG. 11 is a diagram for explaining a circuit operation at the time of turning off a self-extinguishing type semiconductor element which does not require a snapper circuit of the present invention.
  • FIG. 1 is a perspective view of the configuration of the large-capacity power converter when viewed from the back.
  • the power converter shown in the figure is a converter that converts AC into DC
  • the converter 107 and the inverter 106 each have three phases, and the power supply voltage is positive (P ), Neutral point (C), and negative (N).
  • Three DC buses 103, 104, and 105 are arranged behind the module 102 to reduce the length of wiring connected to the semiconductor elements inside the module 102.
  • the three DC buses may be installed between the minimum and maximum heights of the module so that the length of wiring connected inside the module is reduced.
  • the function of the converter 107 is divided and shown as converters 171, 172, 173 for every three phases, and the DC buses 103, 104, 100 of three lines are shown.
  • the connection to 5 only the detailed diagram of converter 1 ⁇ 1 is shown, and the wiring diagram for other converters and the connection status with the inverter circuit are omitted, but the same as the wiring diagram 11 It has the following configuration.
  • Fig. 2 is a circuit diagram showing one phase of the circuit used in the neutral point clamp type three-phase inverter or three-phase converter.
  • the self-extinguishing type semiconductor switching element (hereinafter referred to as the switching element) is shown. 101) to 104, snubber capacitors 105, 106, snapper diodes 115, 116, clamp diodes 107, 108, 117, 111 8 and It consists of a lamp capacitor 1 19, 120, a freewheel diode 1 1 1 to 1 1 4, an anode reactor 1 109, 110, and a smoothing capacitor 91, 92, and a solid line.
  • the portion enclosed by the bracket corresponds to one phase of the module 2 that can be pulled out from the front side and replaced.
  • the inductance indicated by 123 to 125 in the figure is the wiring inductance that is parasitic on the wiring connected to the module 202 from the DC bus 203, 204, 205 shown in FIG. , 1 26 and 1 27 correspond to the smoothing capacitors 19 1 and 19 2 for smoothing the voltage between the DC buses 203, 204 and 205 shown in FIG.
  • the wiring inductance that is parasitic on the connected wiring is shown.
  • the snubber circuits for GT0102 and 103 are not shown.
  • the switching mode of the switching elements 101 to 104 outputs a so-called three-level operation in which three power supply voltages indicated by P, C, and N are output.
  • a transition from a non-conducting state (OFF) to a conducting state (ON) is called a turn-on, and an operation to make a transition from ⁇ N to 0 FF is called a turn-off.
  • a gate control circuit for controlling these components is not shown, it is usually installed in the module 2 because it needs to be arranged close to the switching element.
  • snubber capacitor 1 0 5 ⁇ clamp diode 1 1 7 ⁇ clamp capacitor 1 1 9 ⁇ wiring inductance 1 2 3 ⁇ smoothing capacitor 2 9 1-wiring inductance of smoothing capacitor section 1 2 6 ⁇ wiring Oscillating voltage is applied to the snubber capacitor 105 when LC resonance occurs in a single loop of inductance 1 2 4 ⁇ clamp diode 1 07 ⁇ snapper diode 1 05.
  • Fig. 4 shows the first part of the oscillation waveform at which the maximum applied voltage is reached, so that the wiring inductances 123, 124 are reduced by half. It can be seen that this is largely related to the applied voltage of the body switching element 101.
  • the maximum applied voltage of the semiconductor switching element is indicated by the rating, and it cannot be used beyond this value. In the case of 6 kV and 6 k AGTO, this rating is 6 kV.
  • the capacitance of the snapper capacitor 105 is Should be increased or the wiring inductance should be reduced? It is misplaced.
  • Increasing the capacity of the snubber capacitor 105 does not have the advantage of increasing the size, increasing the cost, and increasing the switching loss for the power converter. Therefore, it is essential to reduce the wiring inductance.
  • the connection between the DC bus and the module can be made with the shortest distance, so that the inductance can be greatly reduced.
  • FIG. 1 shows an example of the configuration of a typical power converter.It may be configured without a regenerative chopper circuit, and it is sufficient if at least one of the inverter and converter is provided. Alternatively, it may be a multi-level inverter.
  • FIG. 2 shows an example of a typical inverter circuit.
  • any power conversion device using a switching element may be used, and the current change rate at turn-on and turn-off of the semiconductor switching element di /
  • the anodic reactor provided to suppress ⁇ t is unnecessary in a semiconductor switching element having a high withstand voltage di / dt characteristic, but the present invention can be applied to this circuit.
  • a circuit configuration that does not require a clamp capacitor or a snubber capacitor may be used.
  • GT0 as a switching element
  • reverse conduction type GT ⁇ , IGBT, SI thyristor, SIC, etc. can be used.
  • FIG. 5 is a side view of an integrated semiconductor stack in which semiconductor elements inside the module are overlapped and pressed together.
  • the semiconductor stack 528 is arranged between the upper and lower support plates 521, 526 as a switching element or a diode.
  • the flat flat-type pressure-bonding semiconductor element 5 23 and the cooling fins 5 24 that dissipate heat from these elements are pressed against each other via an insulating spacer 5 2 2 and a coned disk spring 5 2 5.
  • 5 2 7 and support bolts 5 20 are used to form the body.
  • the semiconductor stack does not need to be composed of one, but may be divided into a plurality and arranged in the modules 271, 272, and 273.
  • FIG. 6 shows an embodiment of the semiconductor stack in one embodiment of the present invention and the connection state between the DC buses 203 and 204 and the external AC power line 250 shown in FIG.
  • DC bus 204 is connected to a cooling fin provided between clamp diodes 107 and 108.
  • a semiconductor switching element 102 and a free wheel diode 112 are connected to the clamp diode 107, and a cooling fin provided between the element 102 and the diode is connected to an external AC power line 25.
  • a switching element 101 and a freewheel diode 111 are connected to the diode 112, and a DC bus 210 is connected to the cooling fin provided between the element 101 and the diode. 3 is connected.
  • Figures 7 and 8 show the arrangement of the semiconductor stacks 528 in the module 271, respectively.
  • the module 271 in addition to the semiconductor stack 528, accommodates a gate control circuit for controlling the switching element and the like.
  • the semiconductor element to be connected to the DC bus is assembled in the semiconductor stack 528, it is arranged on the rearmost surface of the module so that the wiring distance from the DC bus is shortened.
  • the inductance can be reduced.
  • the elements can be arranged close to the elements to be connected to the DC bus, the effect of reducing inductance is further enhanced.
  • the configuration is such that the depth of the module section 271 is reduced.
  • the semiconductor stack 528 inside the module section 271 is arranged close to the DC bus 203, 204, 205. It is good to do.
  • a plurality of semiconductor stacks may be arranged in the module according to the power to be converted.
  • the semiconductor stack in which the elements to be connected to the DC bus are pressed into contact with each other may be provided at the rearmost surface of the module.
  • the same effect can be obtained even if the elements to be connected to the DC bus are installed on the rearmost surface of the module, even if they are not assembled in a stack, such as semiconductor elements with terminals arranged on the same surface. .
  • the long side is arranged in a horizontal plane in FIG. 7 and the short side is arranged in a horizontal plane in FIG. At the position from the lowermost surface to the uppermost surface of the semiconductor stack 528, so that the wiring distance from the semiconductor stack 528 can be shortened. It has a configuration.
  • FIG. 9 shows a connection configuration between the semiconductor stack 528 and the DC bus.
  • the neutral DC bus 204 is set at the same horizontal position as the cooling fins 752. From the bus 204, the conductor substrates 746, 762 are connected to the cooling fins 752 at the shortest distance while maintaining insulation from other members.
  • a unit of an anode reactor 109, 110 is provided above the DC bus at a level of the smoothing capacitors 291, 292, and a conductor board 20 is provided.
  • a conductor board 72 extends from 3 as a conductor path to the anode reactor 109, and a conductor board 72 3 is connected to the cooling fin 756 from the anode reactor. Further, reciprocating currents flowing in the opposite directions flow through the conductive substrates 72 2 and 72 3 .Since the distance between these conductive substrates is reduced, the coupling ratio can be increased, and as a result, the inductance is reduced. ing.
  • a conductor board having the same configuration as the anode reactor 110 connects between the DC bus 205 and the semiconductor stack 528.
  • FIG. 10 is a configuration diagram of a three-level inverter without an anode reactor.
  • the switching elements 101 to 104 and a snapper diode 115 for absorbing a surge voltage are shown in FIG. It consists of a snubber circuit consisting of 16 and snubber capacitors 105, 106, smoothing capacitors 91, 92, and clamp diodes 107, 108.
  • the freewheel guide is omitted.
  • a GTO is illustrated as a switching element, any element such as an IGBT may be used as long as the dino dt is within the rating in a circuit without an anodic reactor.
  • L is the value of the wiring inductance 123 to 125 that is parasitic on the wiring between the DC buses 203, 204, 205 and the module 202, and is allowed when the switching element is turned off.
  • the capacitance of the snapper capacitor 105 provided in the snubber circuit is C s
  • the DC current of the smoothing capacitors 91 and 92 is Let the input voltage be Vdc. If the current supplied to the load via the switching element is I, and the switching elements 101 and 102 are in the on state as shown in FIG. 10 (1), the switching element 101 is turned on.
  • the charging voltage V cs charged to the snubber capacitor 105 when the power is turned off is
  • Fig. 11 is a configuration diagram of a three-level inverter without a snapper circuit.
  • the switching elements 101 to 104, the smoothing capacitors 91, 92, and the It consists of lamp diodes 107 and 108.
  • the freewheel diode is omitted.
  • the switching element is illustrated as GT ⁇ , any element such as an IGBT may be used.
  • the power converter according to the present invention has a wiring inductance This can reduce the surge voltage when the semiconductor element is turned off, and contribute to downsizing and low loss of the power converter.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

Dans un convertisseur d'énergie utilisant un élément de commutation à semi-conducteurs, cet élément de commutation génère une surtension lorsque l'élément est mis hors fonction à cause des inductances de câblage qui parasitent les conducteurs du câblage raccordant entre eux des composants du circuit. Il est donc nécessaire d'ajouter un condensateur de grande capacitance au convertisseur d'énergie de manière à absorber la surtension transitoire. De façon à éviter d'utiliser ce condensateur de grande capacitance, une pile d'éléments à semi-conducteurs à auto-extinction d'arc d'un module est rapprochée d'un bus courant continu, et le bus courant continu est placé entre la limite inférieure et la limite supérieure de la hauteur du module. Puisque la distance de câblage du bus courant continu à la section du module peut être raccourcie, les inductances du câblage des conducteurs (1) larges peuvent être réduites, et la surtension transitoire qui est générée lorsque l'élément de commutation à semi-conducteurs est mis hors tension peut être également réduite. De plus, la taille du convertisseur d'énergie peut être réduite, puisque la capacitance du condensateur ajouté pour absorber la surtension transitoire peut être aussi réduite.
PCT/JP1997/003890 1997-10-27 1997-10-27 Convertisseur d'energie WO1999022437A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/003890 WO1999022437A1 (fr) 1997-10-27 1997-10-27 Convertisseur d'energie

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/003890 WO1999022437A1 (fr) 1997-10-27 1997-10-27 Convertisseur d'energie

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WO1999022437A1 true WO1999022437A1 (fr) 1999-05-06

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003032478A1 (fr) 2001-09-25 2003-04-17 Daikin Industries, Ltd. Detecteur de courant de phase

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54119628A (en) * 1978-02-06 1979-09-17 Siemens Ag Power unit for machie tool drive gear
JPS5889062A (ja) * 1981-11-20 1983-05-27 Hitachi Ltd 電力変換器
JPH025456A (ja) * 1988-01-29 1990-01-10 Heidelberger Druckmas Ag 直流電圧中間回路を有する周波数変換装置
JPH08196081A (ja) * 1995-01-18 1996-07-30 Toshiba Corp 電力変換装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54119628A (en) * 1978-02-06 1979-09-17 Siemens Ag Power unit for machie tool drive gear
JPS5889062A (ja) * 1981-11-20 1983-05-27 Hitachi Ltd 電力変換器
JPH025456A (ja) * 1988-01-29 1990-01-10 Heidelberger Druckmas Ag 直流電圧中間回路を有する周波数変換装置
JPH08196081A (ja) * 1995-01-18 1996-07-30 Toshiba Corp 電力変換装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003032478A1 (fr) 2001-09-25 2003-04-17 Daikin Industries, Ltd. Detecteur de courant de phase
EP1432110A1 (fr) * 2001-09-25 2004-06-23 Daikin Industries, Ltd. Detecteur de courant de phase
EP1432110A4 (fr) * 2001-09-25 2008-09-03 Daikin Ind Ltd Detecteur de courant de phase

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