WO1999067798A3 - Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates - Google Patents
Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates Download PDFInfo
- Publication number
- WO1999067798A3 WO1999067798A3 PCT/US1999/008548 US9908548W WO9967798A3 WO 1999067798 A3 WO1999067798 A3 WO 1999067798A3 US 9908548 W US9908548 W US 9908548W WO 9967798 A3 WO9967798 A3 WO 9967798A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resistance
- turn
- diamond
- silicon
- membrane
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 abstract 5
- 239000010432 diamond Substances 0.000 abstract 5
- 239000002245 particle Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000012528 membrane Substances 0.000 abstract 4
- 230000005855 radiation Effects 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000005684 electric field Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Measurement Of Radiation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Methods and apparatus for high voltage, high current, fast acting, high temperature, high repetition rate synthetic diamond electrical switch and an improved particle and radiation detector are disclosed. Energy absorbed from incident electrons, ultraviolet photons or other radiation sources including soft and hard x-rays, gamma rays, alpha particles, other types of ions, neutrons or other sub-atomic particles is used to decrease the resistance of a synthetic (CVD) diamond membrane from its normal, high resistance 'off' state to a temporary, low resistance 'on' state. The controlled variation of the resistance of the diamond allows the membrane, when connected to an external circuit, to act as a repetitively pulsed electrical switch. Without the particle or radiation energy input, the membrane exhibits its normal very high resistance (for example, greater than 1012 Φ) and is in the 'off' state with negligible current. With particle or radiation energy input, the resistance plunges to low values (for example, much less than 1 Φ) and the current increases. The superior electrical field strength and thermal conductivity of both natural and synthetic diamond relative to doped silicon semi-conductors allow diamond membranes to hold off higher voltage and operate at higher temperatures than silicon semi-conductor junctions of comparable size. Practical limits to silicon or silicon carbide semi-conductor switches are less than 6 kV voltage hold-off in a single switch that can switch current densities of about 100 A/cm2 with approximately 1 νs turn-on and turn-off times. Silicon switches are unidirectional and limited to less than 400 °K operation (with respect to operating temperature).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8816698P | 1998-06-05 | 1998-06-05 | |
| US60/088,166 | 1998-06-05 | ||
| US22697599A | 1999-01-08 | 1999-01-08 | |
| US09/226,975 | 1999-01-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1999067798A2 WO1999067798A2 (en) | 1999-12-29 |
| WO1999067798A3 true WO1999067798A3 (en) | 2000-03-16 |
Family
ID=26778364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1999/008548 WO1999067798A2 (en) | 1998-06-05 | 1999-04-19 | Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO1999067798A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2298858C2 (en) * | 2002-01-17 | 2007-05-10 | Альстом | Matrix electrical-energy converter |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10028295C1 (en) * | 2000-06-07 | 2001-08-16 | Reinhausen Maschf Scheubeck | Tap changer |
| FR2834828B1 (en) * | 2002-01-17 | 2005-04-29 | Alstom | MATRIX CONVERTER FOR ELECTRIC POWER TRANSFORMATION |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993033A (en) * | 1989-12-18 | 1991-02-12 | Thermo Electron Technologies Corp. | High power fast switch |
| US5355380A (en) * | 1992-12-23 | 1994-10-11 | Lin Shiow Hwa | Compact millimeter wave source |
| US5592053A (en) * | 1994-12-06 | 1997-01-07 | Kobe Steel Usa, Inc. | Diamond target electron beam device |
-
1999
- 1999-04-19 WO PCT/US1999/008548 patent/WO1999067798A2/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993033A (en) * | 1989-12-18 | 1991-02-12 | Thermo Electron Technologies Corp. | High power fast switch |
| US5355380A (en) * | 1992-12-23 | 1994-10-11 | Lin Shiow Hwa | Compact millimeter wave source |
| US5592053A (en) * | 1994-12-06 | 1997-01-07 | Kobe Steel Usa, Inc. | Diamond target electron beam device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2298858C2 (en) * | 2002-01-17 | 2007-05-10 | Альстом | Matrix electrical-energy converter |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999067798A2 (en) | 1999-12-29 |
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