WO1999066349A1 - Panneau de scintillateur, capteur d'image radiologique et procede de fabrication - Google Patents
Panneau de scintillateur, capteur d'image radiologique et procede de fabrication Download PDFInfo
- Publication number
- WO1999066349A1 WO1999066349A1 PCT/JP1999/003267 JP9903267W WO9966349A1 WO 1999066349 A1 WO1999066349 A1 WO 1999066349A1 JP 9903267 W JP9903267 W JP 9903267W WO 9966349 A1 WO9966349 A1 WO 9966349A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- scintillator
- transparent
- image sensor
- organic film
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 12
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 12
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 35
- -1 Sηθ2 Inorganic materials 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 9
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 5
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 3
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 4
- 229910004541 SiN Inorganic materials 0.000 claims 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 3
- 235000012745 brilliant blue FCF Nutrition 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 21
- 238000010586 diagram Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
Definitions
- the present invention relates to a scintillator panel used for medical X-ray photography and the like, a radiation image sensor, and a method of manufacturing the same.
- X-ray photosensitive films have been used in medical and industrial X-ray photography, but radiation imaging systems using radiation detection elements have become widespread in terms of convenience and preservation of imaging results.
- pixel data based on two-dimensional radiation is acquired as an electric signal by a radiation detecting element, and this signal is processed by a processing device and displayed on a monitor.
- a radiation detecting element disclosed in Japanese Patent Application Laid-Open No. Hei 5-196472 and Japanese Patent Laid-Open Publication No. Hei 63-219587 is known.
- This radiation detection element forms a scintillating light on an image pickup element or a fiber optical plate (FOP), that is, an optical unit formed by bundling a plurality of fibers, and detects radiation incident from the scintillating light side in a scintillating light.
- FOP fiber optical plate
- CsI a typical scintillating material
- CsI is a hygroscopic material that absorbs water vapor (moisture) in the air and deliquesces
- the moisture-impermeable barrier is formed above the scintillating layer to protect the scintillating layer from moisture.
- a scintillation image is formed on a substrate with good X-ray transmittance such as an A1 substrate. Is formed, and the image pickup device is arranged so as to be opposed to the whole area. It may be desirable to use a structured radiation detection element.
- An object of the present invention is to provide a scintillator panel having excellent moisture resistance, a radiation image sensor, and a method of manufacturing the same. Disclosure of the invention
- a scintillator panel includes a radiation-transparent substrate, a scintillator formed on the substrate, a first transparent organic film covering the scintillator, and a first transparent organic film. And a transparent inorganic film.
- the transparent inorganic film formed on the first transparent organic film covering the scintillator is provided, the moisture resistance of the scintillator can be significantly improved by this transparent inorganic film.
- the present invention is characterized in that a second transparent organic film is further formed on the transparent inorganic film of the scintillator panel. According to the present invention, since the second transparent organic film is formed on the transparent inorganic film, peeling of the transparent inorganic film can be prevented.
- the transparent inorganic film of the panel of Sinchile is S i ⁇ 2, A1203, T
- the radiation image sensor according to the present invention includes a radiation-transmissive substrate, a scintillator formed on the substrate, a first transparent organic film covering the scintillator, and a first transparent organic film formed on the first transparent organic film.
- the present invention is characterized in that a second transparent organic film is further formed on the transparent inorganic film of the radiation image sensor. According to the present invention, since the second transparent organic film is formed on the transparent inorganic film, peeling of the transparent inorganic film can be prevented.
- the transparent inorganic film of the radiation image sensor is composed of Si02, A12203, Ti02, In203, S ⁇ 2, MgO, SiN, and MgF. 2, LiF, CaF2, AgC1, and SiNO.
- the present invention provides a first step of forming a scintillation layer on a radiolucent substrate, a second step of forming a first transparent organic film covering the scintillation layer, and a step of forming a first transparent organic film on the first transparent organic film. And a third step of forming a transparent inorganic film. According to the present invention, since the transparent inorganic film is formed on the first transparent organic film in the third step, it is possible to manufacture a scintillator panel in which the moisture resistance of the scintillator has been significantly improved.
- the present invention is characterized by further comprising a fourth step of forming a second transparent organic film on the transparent inorganic film. According to the present invention, since the second transparent organic film is formed on the transparent inorganic film in the fourth step, it is possible to manufacture a scintillating panel capable of preventing peeling of the transparent inorganic film.
- the present invention provides a first step of forming a scintillation layer on a radiolucent substrate, a second step of forming a first transparent organic film covering the scintillation layer, and a step of forming a first transparent organic film on the first transparent organic film.
- the present invention provides a first step of forming a scintillation layer on a radiolucent substrate, a second step of forming a first transparent organic film covering the scintillation layer, and a step of forming a first transparent organic film on the first transparent organic film.
- the method is characterized by comprising a fourth step of forming and a fifth step of arranging the image pickup device in opposition to the scintillation.
- a radiation image sensor that can prevent peeling of the transparent inorganic film can be manufactured.
- FIG. 1 is a cross-sectional view of a scintillator panel according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view of the radiation image sensor according to the embodiment of the present invention.
- FIG. 3A is a diagram showing a manufacturing step of the scintillation panel according to the embodiment of the present invention.
- FIG. 3B is a diagram showing a manufacturing step of the scintillation panel according to the embodiment of the present invention.
- FIG. 3C is a diagram showing a manufacturing step of the scintillation panel according to the embodiment of the present invention.
- FIG. 4A is a diagram showing a manufacturing process of the scintillation panel according to the embodiment of the present invention.
- FIG. 4B is a diagram showing a manufacturing step of the scintillating light panel according to the embodiment of the present invention.
- FIG. 1 is a cross-sectional view of a scintillator panel 2 according to the embodiment
- FIG. 2 is a cross-sectional view of the radiation image sensor 4 according to the embodiment.
- a scintillator panel 12 having a columnar structure for converting incident radiation into visible light is formed on one surface of an A1 substrate 10 of the scintillator panel 2. .
- C s I of T 1 dope is used.
- the entire surface of the scintillator 12 formed on the substrate 10 is covered with a first polyparaxylylene film (first transparent organic film) 14 together with the substrate 10.
- An S 102 (transparent inorganic film) film 16 is formed on the surface of the first polyparaxylylene film 14 on the side.
- the second polyparaxylylene film 14 is formed on the surface of the Si02 film 16 and on the surface of the first polyparaxylylene film 14 on the substrate 10 side where the Si02 film 16 is not formed.
- a ren film (second transparent organic film) 18 is formed, and the entire surface is covered with a second polyparaxylylene film 18.
- the radiation image sensor 4 has a structure in which an image sensor 20 is attached to the scintillator panel 12 side of the scintillator panel 2.
- a manufacturing process of the scintillation overnight panel 2 will be described.
- a columnar crystal of Ts-doped CsI is grown on one surface of an A1 substrate 10 (thickness 1.0 mm) as shown in Fig. Form evening 12 (see Figure 3B).
- a polyparaxylylene film 14 is formed. That is, the substrate 10 on which the scintillation layer 12 is formed is put into a CVD apparatus, and a first polyparaxylylene film 14 is formed with a thickness of 10 / m. Thereby, the first polyparaxylylene film 14 is formed on the entire surface of the scintillator 12 and the substrate 10 (see FIG. 3C). The first polyparaxylylene film 14 also has a role of flattening the tip of the scintillator 12 because the tip of the scintillator 12 is uneven.
- a Si i2 film 16 is formed to a thickness of 30 O nm by sputtering on the surface of the first polyparaxylylene layer 14 on the 12th side of the scintillator (see FIG. 4A). . Since the SiO 2 film 16 is intended to improve the moisture resistance of the scintillator 12, it is formed in a range that covers the scintillator 12. As described above, the tip of the scintillator 12 is flattened by the first polyparaxylylene film 14, The Si 02 film 16 can be formed thin ( ⁇ ⁇ ⁇ ! ⁇ 200 nm) so that the output light quantity does not decrease.
- a second polyparaxylylene film 18 is again formed on the surface of the Si02 film 16 and the surface of the first polyparaxylylene film 14 on the substrate 10 side where the Si02 film 16 is not formed by the CVD method. Form a film with a thickness of 10 ⁇ m (see Fig. 4B). When this step is completed, the manufacture of the scintillator panel 2 is completed.
- the radiation image sensor 4 is manufactured by attaching an image sensor (CCD) 20 to the scintillator panel 12 side of the completed scintillator panel 2.
- CCD image sensor
- the thus-produced scintillator panel 2 and the conventional scintillator panel that is, the scintillator panel having only one polyparaxylylene film on the scintillator panel, have a relative humidity of 93% and a temperature of 40 °.
- a moisture resistance test was performed under the conditions of C.
- the conventional scintillator panel has a resolution characteristic degraded by 10 to 15% compared to the initial value when left in this environment for 100 hours.
- the scintillator panel 2 according to this embodiment is: No change was observed in the resolution characteristics even when left for 2800 hours in the above environment. Therefore, the adoption of the structure of the Scintillation Panel 2 enabled the moisture resistance life performance to be extended 30 times compared to the conventional Scintillation Panel.
- the Si 02 film 16 is formed on the surface of the first polyparaxylylene film 14 on the scintillator 12 side.
- the moisture resistance of the panel 2 can be remarkably improved.
- the second polyparaxylylene film 18 is formed on the Si 02 film 16, peeling of the Si 02 film 16 can be prevented.
- the S i 02 film is used as the transparent inorganic film.
- the present invention is not limited to this.
- An inorganic film made of N, MgF 2, LiF, CaF 2, AgCl, SiNO or the like may be used.
- C sl (T 1) is used as a short notice, but the present invention is not limited to this, and Cs l (Na), Na I (T l), L i I (Eu) , KI (T 1) or the like may be used.
- the substrate made of A1 is used as the substrate.
- a substrate made of amorphous carbon, C (graph eye) G) substrate, Be substrate, SiC substrate, or the like is used as the substrate.
- the force s for forming the Si 02 film 16 on the surface of the first polyparaxylylene film 14 on the side of the scintillator 12 may be formed not only on the surface of the paraxylylene film 14 but also on the entire surface of the first polyparaxylylene film 14.
- the polyparaxylylene film 18 is formed on the surface of the Si02 film 16 and the surface of the polyparaxylylene film 14 on the substrate 10 side, that is, on the entire surface. Since the para-xylylene film 18 has a role of preventing peeling of the Si 02 film 16, the material is not limited as long as the film is made of a transparent material. You may make it form in the range which covers.
- polyparaxylylene in addition to polyparaxylylene, polymonoxylylene, polymonoclox paraxylylene, polydichloroparaxylylene, polytetracloxparaxylylene, polyfluoroparaxylylene, polydimethylparaxylylene, poly Including getyl paraxylylene.
- the moisture resistance of the scintillator can be significantly improved by the transparent inorganic film. Can be.
- the second transparent organic film can prevent peeling of the transparent inorganic film.
- the first covering the scintillation overnight Since it has a transparent inorganic film formed on the transparent organic film, the transparent inorganic film can significantly improve the moisture resistance over a short period of time.
- the first transparent inorganic film can significantly improve the moisture resistance over a short period of time.
- the second transparent organic film When the second transparent organic film is formed, the second transparent organic film can prevent the transparent inorganic film from peeling off.
- the transparent inorganic film is formed on the first transparent organic film in the third step, the moisture resistance of the scintillating layer is significantly improved. Overnight panels can be manufactured.
- the second transparent organic film is formed on the transparent inorganic film by the fourth step, it is possible to manufacture a scintillation panel capable of preventing the transparent inorganic film from peeling off.
- the transparent inorganic film is formed on the first transparent organic film in the third step, the radiation resistance of the scintillator is significantly improved.
- An image sensor can be manufactured.
- a radiation image sensor capable of preventing the transparent inorganic film from being peeled off by the second transparent organic film is manufactured. be able to.
- the scintillator panel and the radiation image sensor according to the present invention are suitable for use in medical and industrial X-ray photography.
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU41684/99A AU4168499A (en) | 1998-06-18 | 1999-06-18 | Scintillator panel, radiation image sensor, and method for manufacturing the same |
JP2000555114A JP3691391B2 (ja) | 1998-06-18 | 1999-06-18 | 放射線イメージセンサ及びその製造方法 |
EP99925380A EP1139120B1 (en) | 1998-06-18 | 1999-06-18 | Radiation image sensor, and method for manufacturing the same |
DE69927522T DE69927522T2 (de) | 1998-06-18 | 1999-06-18 | Strahlungsbildsensor und verfahren zu dessen herstellung |
US09/737,817 US6429430B2 (en) | 1998-06-18 | 2000-12-18 | Scintillator panel, radiation image sensor, and methods of making the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10/171189 | 1998-06-18 | ||
JP17118998 | 1998-06-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/737,817 Continuation-In-Part US6429430B2 (en) | 1998-06-18 | 2000-12-18 | Scintillator panel, radiation image sensor, and methods of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999066349A1 true WO1999066349A1 (fr) | 1999-12-23 |
Family
ID=15918666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1999/003267 WO1999066349A1 (fr) | 1998-06-18 | 1999-06-18 | Panneau de scintillateur, capteur d'image radiologique et procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US6429430B2 (ja) |
EP (1) | EP1139120B1 (ja) |
JP (1) | JP3691391B2 (ja) |
CN (1) | CN1140815C (ja) |
AU (1) | AU4168499A (ja) |
DE (1) | DE69927522T2 (ja) |
WO (1) | WO1999066349A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002023219A1 (fr) | 2000-09-11 | 2002-03-21 | Hamamatsu Photonics K.K. | Panneau de scintillateur, capteur d'images radiographiques et procedes de production |
US6753531B2 (en) | 1999-04-09 | 2004-06-22 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US7034306B2 (en) | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US10670741B2 (en) | 2015-03-20 | 2020-06-02 | Varex Imaging Corporation | Scintillator |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1382723B1 (en) * | 1998-06-18 | 2011-07-27 | Hamamatsu Photonics K.K. | Method of organic film deposition |
US6735174B1 (en) * | 2000-03-29 | 2004-05-11 | Intel Corporation | Method and systems for flow control of transmissions over channel-based switched fabric connections |
US7141803B2 (en) | 2000-09-11 | 2006-11-28 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
US20040051441A1 (en) * | 2002-07-09 | 2004-03-18 | Paul Leblans | Binderless storage phosphor screen comprising a support including an amorphous (a-C) carbon layer |
EP1376616B1 (en) * | 2002-06-28 | 2012-08-15 | Agfa HealthCare NV | Method for producing X-ray images using a binderless storage phosphor screen comprising a support including an amorphous (a-C) carbon layer |
JP4607587B2 (ja) * | 2002-09-26 | 2011-01-05 | 株式会社東芝 | 放射線検出器用蛍光体シートおよびそれを用いた放射線検出器と放射線検査装置 |
DE102006022138A1 (de) * | 2006-05-11 | 2007-11-15 | Siemens Ag | Szintillatorplatte |
DE102006024893A1 (de) * | 2006-05-24 | 2007-12-06 | Siemens Ag | Szintillatorplatte |
DE102006038969B4 (de) * | 2006-08-21 | 2013-02-28 | Siemens Aktiengesellschaft | Röntgenkonverterelement und Verfahren zu dessen Herstellung |
US7465932B1 (en) | 2007-06-15 | 2008-12-16 | Hamamatsu Photonics K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
US7732788B2 (en) * | 2007-10-23 | 2010-06-08 | Hamamatsu Photonics K.K. | Radiation image converting panel, scintillator panel and radiation image sensor |
US7468514B1 (en) * | 2007-06-15 | 2008-12-23 | Hamamatsu Photonics K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
JP5922518B2 (ja) * | 2012-07-20 | 2016-05-24 | 浜松ホトニクス株式会社 | シンチレータパネル及び放射線検出器 |
WO2017100132A1 (en) * | 2015-12-10 | 2017-06-15 | Ioneer, Llc | Apparatus and method for determining parameters of process operation |
US20180174254A1 (en) * | 2016-12-19 | 2018-06-21 | CleanMeNext LLC | Housekeeping software timeline |
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JPS6249779U (ja) * | 1985-09-14 | 1987-03-27 | ||
JPH01172792A (ja) * | 1987-12-28 | 1989-07-07 | Hitachi Ltd | 放射線検出器およびその製造方法 |
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JPS6249779A (ja) | 1985-08-29 | 1987-03-04 | Canon Inc | プリンタ制御装置 |
JPS63215987A (ja) | 1987-03-04 | 1988-09-08 | Hamamatsu Photonics Kk | 高解像シンチレ−シヨンフアイバ−プレ−ト |
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US5179284A (en) * | 1991-08-21 | 1993-01-12 | General Electric Company | Solid state radiation imager having a reflective and protective coating |
US5132539A (en) * | 1991-08-29 | 1992-07-21 | General Electric Company | Planar X-ray imager having a moisture-resistant sealing structure |
US5208460A (en) * | 1991-09-23 | 1993-05-04 | General Electric Company | Photodetector scintillator radiation imager having high efficiency light collection |
JPH0721560A (ja) | 1993-06-30 | 1995-01-24 | Sony Corp | 磁気記録媒体の製造方法 |
WO1998036290A1 (fr) * | 1997-02-14 | 1998-08-20 | Hamamatsu Photonics K.K. | Dispositif de detection de radiations et son procede de production |
FR2774175B1 (fr) | 1998-01-27 | 2000-04-07 | Thomson Csf | Capteur electronique matriciel photosensible |
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1999
- 1999-06-18 AU AU41684/99A patent/AU4168499A/en not_active Abandoned
- 1999-06-18 WO PCT/JP1999/003267 patent/WO1999066349A1/ja active IP Right Grant
- 1999-06-18 JP JP2000555114A patent/JP3691391B2/ja not_active Expired - Fee Related
- 1999-06-18 DE DE69927522T patent/DE69927522T2/de not_active Expired - Lifetime
- 1999-06-18 CN CNB998072958A patent/CN1140815C/zh not_active Expired - Lifetime
- 1999-06-18 EP EP99925380A patent/EP1139120B1/en not_active Expired - Lifetime
-
2000
- 2000-12-18 US US09/737,817 patent/US6429430B2/en not_active Expired - Lifetime
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JPS6249779U (ja) * | 1985-09-14 | 1987-03-27 | ||
JPH01172792A (ja) * | 1987-12-28 | 1989-07-07 | Hitachi Ltd | 放射線検出器およびその製造方法 |
Non-Patent Citations (1)
Title |
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See also references of EP1139120A4 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7034306B2 (en) | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US7408177B2 (en) | 1998-06-18 | 2008-08-05 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US7705315B2 (en) | 1998-06-18 | 2010-04-27 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US6753531B2 (en) | 1999-04-09 | 2004-06-22 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US6911658B2 (en) | 1999-04-09 | 2005-06-28 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
WO2002023219A1 (fr) | 2000-09-11 | 2002-03-21 | Hamamatsu Photonics K.K. | Panneau de scintillateur, capteur d'images radiographiques et procedes de production |
EP1326093A4 (en) * | 2000-09-11 | 2006-11-15 | Hamamatsu Photonics Kk | SCINTILLATE PANEL, RADIATION IMAGE SENSOR AND METHOD FOR THE PRODUCTION THEREOF |
EP1879050A3 (en) * | 2000-09-11 | 2008-03-26 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
EP2267485A1 (en) * | 2000-09-11 | 2010-12-29 | Hamamatsu Photonics K.K. | Method for making a scintillator panel and a radiation image sensor |
US10670741B2 (en) | 2015-03-20 | 2020-06-02 | Varex Imaging Corporation | Scintillator |
Also Published As
Publication number | Publication date |
---|---|
CN1305593A (zh) | 2001-07-25 |
US6429430B2 (en) | 2002-08-06 |
US20010005017A1 (en) | 2001-06-28 |
EP1139120A4 (en) | 2001-10-04 |
EP1139120B1 (en) | 2005-09-28 |
DE69927522D1 (de) | 2006-02-09 |
JP3691391B2 (ja) | 2005-09-07 |
EP1139120A1 (en) | 2001-10-04 |
AU4168499A (en) | 2000-01-05 |
DE69927522T2 (de) | 2006-07-13 |
CN1140815C (zh) | 2004-03-03 |
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