WO1999063791A2 - Thermoelectric device and method for manufacturing of said device - Google Patents
Thermoelectric device and method for manufacturing of said device Download PDFInfo
- Publication number
- WO1999063791A2 WO1999063791A2 PCT/SE1999/000861 SE9900861W WO9963791A2 WO 1999063791 A2 WO1999063791 A2 WO 1999063791A2 SE 9900861 W SE9900861 W SE 9900861W WO 9963791 A2 WO9963791 A2 WO 9963791A2
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- WIPO (PCT)
- Prior art keywords
- thermoelectric
- couples
- ceramic material
- thermocouples
- end surfaces
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 44
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- 230000005678 Seebeck effect Effects 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 5
- 239000000919 ceramic Substances 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 238000005266 casting Methods 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 12
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000005507 spraying Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
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- TUFZVLHKHTYNTN-UHFFFAOYSA-N antimony;nickel Chemical compound [Sb]#[Ni] TUFZVLHKHTYNTN-UHFFFAOYSA-N 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000005676 thermoelectric effect Effects 0.000 description 4
- WYUZTTNXJUJWQQ-UHFFFAOYSA-N tin telluride Chemical compound [Te]=[Sn] WYUZTTNXJUJWQQ-UHFFFAOYSA-N 0.000 description 4
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XFWJKVMFIVXPKK-UHFFFAOYSA-N calcium;oxido(oxo)alumane Chemical compound [Ca+2].[O-][Al]=O.[O-][Al]=O XFWJKVMFIVXPKK-UHFFFAOYSA-N 0.000 description 2
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- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Definitions
- the present invention relates to a thermoelectric device intended for high-temperature applications and adapted to convert heat to electricity by means of the Seebeck effect, a method for manufacturing the device, and a method for contacting thermoelectric couples included in the device .
- a field involving specific kinds of need is high-temperature applications, i.e. applications in temperature ranges typically from about 400° and higher.
- Such applications can include the recovery of excess heat, for instance, in process industries, from heat pumps or from internal combustion engines and exhaust gas catalysts in vehicles. Further examples may comprise the recovery of frictional heat from, for example, brakes.
- This can be achieved thanks to the Seebeck effect, i.e. a thermoelectric effect which means that voltage arises in an electric circuit composed of two different metals if the two contact points where the metals meet have different temperatures; in other words, devices utilising the Seebeck effect have a hot side and an opposite cold side.
- thermoelectric device for use in said high-temperature range is disclosed in US Patent Specification US-A-4,459,428 (Chou) .
- This specification discloses a thermoelectric device for generating electricity, comprising parallel, rod-shaped, n- and p-doped thermoelectric couples connected in series and arranged between two separate sets of copper segments and attached thereto by using soldering paste screen-printed on the inner surfaces of the sets of copper segments .
- the space between the thermoelectric couples and the copper segments is filled with a ceramic moulded mass, and the outer surfaces of the device are covered with a ceramic thick film insulator.
- a device of this type has been found unsatisfactory.
- An object of the present invention is to provide a new and improved thermoelectric device intended for high- temperature applications. It is also an object of the present invention to provide a thermoelectric device having a reduced sensitivity to thermal expansion.
- a further object of the present invention is to provide a simple method for manufacturing a thermoelectric device as stated above, which requires only a few heat treatments .
- One more object of the present invention is to provide simpler contacting, i.e. mutual connection and external connection of thermoelectric couples in a ther- moelectric device stated above.
- thermoelectric device which is intended for high-temperature applications and comprises thermoelectric couples in a body of ceramic material, wherein the ceramic material, at least partially, has been given a significantly increased porosity, preferably exceeding about 30%, more preferred exceeding about 60%.
- a thermoelectric device is provided, which is intended for high-temperature applications and comprises thermoelectric couples in a body of ceramic material, wherein conduction paths for mutual electric connection and preparation for external electric connection of the thermoelectric couples consist of electrically conductive contact material thermally sprayed on the end surfaces of said thermoelectric couples and on surfaces of the body which are positioned between the thermoelectric couples that are to be connected.
- thermoelectric device intended for high-temperature applications, comprising the steps of making a green body with a body of hardened ceramic material with thermoelectric couples embedded therein; heat-treating the green body; and electrically contacting the thermoelectric couples for forming conduction paths.
- thermoelectric couples arranged in, preferably cast into, a body of ceramic material, wherein the conduction paths are formed by thermal spraying of elec- trically conductive material on the end surfaces of the thermoelectric couples and on surfaces of the body which are located between the thermoelectric couples that are to be mutually connected.
- a fifth aspect of the present invention involves use of microballoons or microspheres for forming, in a thermoelectric device comprising thermoelectric couples in a body of ceramic material, a heat-insulation-increasing porosity of the ceramic material .
- a sixth aspect of the present invention involves use of microballoons or microspheres in combination with a binder, preferably an enamel, for adapting, in a thermoelectric device comprising thermoelectric couples in a body of ceramic material, the coefficient of thermal expansion of the ceramic material to the coefficient of thermal expansion of the thermoelectric couples which are arranged in, preferably cast into, the body.
- the invention relates to a thermoelectric device comprising thermoelectric couples, preferably p- and n-doped semiconductor elements, below referred to as thermocouples, in a body of ceramic material, the thermocouples being cast into the ceramic material so that the thermocouples together with the body constitute a uniformly composed body, on which the requisite conduction paths can be formed by means of applied conductive layers.
- thermocouples thermoelectric couples, preferably p- and n-doped semiconductor elements, below referred to as thermocouples, in a body of ceramic material, the thermocouples being cast into the ceramic material so that the thermocouples together with the body constitute a uniformly composed body, on which the requisite conduction paths can be formed by means of applied conductive layers.
- thermocouples It has been found advantageous to carry out the casting of the ceramic body round the thermocouples in such manner that in the resulting uniformly composed body both end surfaces of each thermocouple are uncovered on opposite sides of said body. This means that contacting, i.e. mutual connection and preparation for external electric connection of the thermocouples, can be easily effected after casting. This simplifies the method of manufacture and makes it more efficient. Alternatively, the thermocouples can already be contacted in the casting of the body.
- the method of manufac- ture is made still more efficient owing to the fact that the thermocouples, before being cast into the body, are not finally heat treated but consist of blanks, so-called green elements.
- the final heat treatment of the thermocouples is carried out after they have been cast into the above-mentioned uniformly composed body, i.e. in connection with the heat treatment of the body.
- the body and the thermocouples are finally heat-treated simultaneously, which reduces the number of necessary heat treatments. Simultaneous heat treatment of the thermocouples and the body is facilitated if the thermocouples and the selected ceramic material have at least practically the same coefficient of thermal expansion while taking the porosity of the ceramic material into consideration.
- thermoelectric device it is according to the invention also possible to affect the thermal conductivity in the thermoelectric device by forming a porosity in the ceramic material .
- said porosity can be produced by admixing microspheres or microballoons to the ceramic body mate- rial.
- the microballoons have a closed outer surface but a hollow interior so that small well-defined and well- distributed voids or pores form in the ceramic material .
- the heat insulating capacity of the body, and thus of the entire device increases. This contributes positively to the thermoelectric effect since a greater difference in temperature across the device can be maintained, which in turn results in the possibility of obtaining a higher output voltage and a higher current intensity.
- a higher porosity allows quicker heating and cooling during the heat treatment in the manufacture . It has been found advantageous, in the contacting of the device, to have a higher thermal conductivity in the body portion closest to the surface that is to be contacted. This gives the advantage of improved removal of heat in contacting by thermal spraying (as will be described below) of conduction paths.
- a surface layer of the body is therefore given a significantly lower porosity than the rest of the body, preferably by this surface layer being produced at least essentially without admixing microballoons. This also results in greater strength of this surface layer, which allows that the amount of microballoons in an inner layer enclosed by the surface layer can be increased, which further increases the thermoelectric effect.
- microballoons may consist of, for instance, balloons of glass, foamed aluminium oxide or some other foamed ceramic material, such as silicon dioxide (Si0 2 ) or zirconium dioxide (Zr0 2 ) .
- the diameter of the microballoons can typically be between 10 and 250 ⁇ m, preferably about 150 ⁇ m.
- the body of ceramic material and the thermocouples cast into the same are not finally heat-treated but consist of a so-called green body.
- a number of methods can be used. Such a method comprises the adding of cement to the ceramic slurry, from which the body is to be cast, so that the green body hardens hydraulically to sufficient hardness. This method results in a very strong ceramic body.
- a further method comprises adding starch or a similar organic material to the ceramic slurry together with, alternatively instead of, said cement.
- the ceramic body-forming material con- sists of an aluminium orthophosphate (AlH 2 P0 4 ) . Since the hardened aluminium orthophosphate, also after the admixing of microballoons, has an inherent elasticity, no adaptation of the coefficient of thermal expansion of the body to that of the thermocouples is required. Moreover, the requisite binding between the aluminium orthophosphate and the microballoons is obtained without adding a binder, thus eliminating the need for a binder, which in turn results in the final heat treatment requiring a substantially lower temperature. A final heat treatment at a temperature of about 100-400°C, preferably at about
- the surface-tension- and viscosity-reducing agent can be, for instance, ethanol.
- the contacting of a device according to the invention can in fact be carried out in different ways, for example by screen printing of conductive patterns, electrolytic precipitation, soldering etc. According to the invention, however, it has been found advantageous for the contacting to apply a conductive material by thermal spraying or what is referred to as sputtering, in which case the conductive material is deposited directly on the body containing the thermocouples , i.e. in the preferred case on the ceramic body material and the end surfaces of the thermocouples, and forms conduction paths in the form of layers. This results in, besides simple and inexpen- sive contacting, the possibility of making the applied conduction layers very thin. It has also been found that thermally sprayed layers have the advantage of possessing a certain inherent possibility of moving. This reduces the risk of cracking and the like in case of motions owing to tension arising because of heat changes.
- a number of metals yield excellent conductivity and are well suited for said contacting, such as copper and gold.
- An advantage of using copper is that contact elements of copper for external connection of the device can easily be fastened, for instance by spot welding.
- thermocouples which are semiconductor elements and deteriorate or destroy these.
- a high transition resistance between thermocouples of said type and the metal is obtained, which decreases the thermoelectric effect of the device.
- these problems are solved by first applying, preferably by sputtering or thermal spraying, at least to the end surfaces of the thermocouples a thin barrier or transition layer of a conductive material compatible with the semiconductor material, preferably tin-telluride (Sn-Te) on the hot side and nickel-antimony (Ni-Sb) or tin-telluride on the cold side.
- a thin barrier or transition layer of a conductive material compatible with the semiconductor material, preferably tin-telluride (Sn-Te) on the hot side and nickel-antimony (Ni-Sb) or tin-telluride on the cold side.
- a conductive material compatible with the semiconductor material preferably tin-telluride (Sn-Te) on the hot side and nickel-antimony (Ni-Sb)
- thermocouples it has been found advantageous to apply said first layer only to the end surfaces of the thermocouples, that is not on the ceramic body material, which makes it possible to apply the first thin barrier and transition layer even before the casting of the thermocouples into the body.
- This allows in itself that a large number of thermocouples, in the present case even exceeding the number of thermocouples contained in a thermoelectric device, can at the same time be provided with said barrier layer, which renders manufacture more efficient.
- the application of the barrier layer takes place prior to casting, it is preferably carried out by means of sputtering.
- the metal which preferably is copper
- the metal is applied by spraying to obtain the desired conduction paths.
- the conductive material compatible with the semiconductor material has a conductivity inferior to that of, for instance, copper, the total conductivity is affected to a very small extent owing to the fact that the first applied barrier layer can be made very thin.
- the actual contacting pattern can be formed, for instance, by direct layer-pattern-controlled spraying or by spraying through a template or mask arranged across the uniformly composed body.
- the thermal contacting spraying may consist of, for instance, plasma spraying, arc spraying, wire spraying or powder spraying.
- the thermal spraying consists of high- velocity flame spraying (VHOF) , which produces a higher density of the sprayed-on contacting layers and, thus, improved electric properties.
- VHOF high- velocity flame spraying
- the conductive layer may consist of iron, in which case no separate barrier layer is necessary. Furthermore iron is well suited for thermal spraying. Since iron is a conductor inferior to, for example, copper, it is, however, necessary for a much thicker contacting layer of iron to be applied than is necessary with copper, which increases the weight and the extent of the device.
- the sensitivity of the semiconductor material to reaction with abutting contacting metals is heat dependent, i.e. the semiconductor material is more sensitive at higher temperatures. At a sufficiently low tempera- ture, it has been found that this sensitivity is negligible. According to the invention, this can be utilised by a barrier layer advantageously not being applied to the semiconductor element end surfaces which are positioned on the cold side. It will be appreciated, however, that this embodiment of the invention can only be used in the cases where one wants to ensure that the temperature on the cold side of the device can continuously be kept sufficiently low, typically below 100°C.
- thermocouples may vary according to the application involved. According to the invention it has been found advantageous that the thermocouples have a typical length of between 5 and 15 mm, preferably about 8 mm, and a typical area of between 10 and 25 mm 2 , preferably about 20 mm 2 .
- the thermocouples are not bound to a certain shape. However, it has been found advantageous to have the shape of a paral- lelepiped or cylinder, which gives the thermocouples square or circular end surfaces.
- the completed device can be seen as a module which in itself can be connected in series and in parallel with similar modules.
- an outer protective casing which surrounds the body and the thermocouples arranged therein and, arranged thereon, contact- ing conduction paths.
- This casing can preferably consist of a layer of ceramic material, preferably an enamel. According to the invention, it has been found advantageous to apply this layer by thermal spraying, preferably by plasma spraying. This facilitates the process of manu- facture still more.
- This layer can also be applied by, for example, wet spraying.
- a further protective layer of a mixture of yttrium (Y) and zirconium dioxide (Zr0 2 ) for example by thermal spraying. This results in an increase of the strength of the device as well as a more uniform temperature distribution over the hot and the cold side of the device.
- Figs 2-7 illustrate schematically the steps included in a method for manufacturing the device in Fig. 1, according to a preferred embodiment of the invention
- Fig. 8 is a schematic part-sectional view, and an enlarged portion thereof, of the device according to Fig. 1;
- Fig. 9 is a schematic part-sectional view, and an enlarged portion thereof, of a device according to an alternative embodiment of the invention.
- Fig. 10 is a schematic part-sectional view of a further alternative embodiment of the invention.
- the thermoelectric device 1 is intended for conversion at high temperature of heat to electricity by the Seebeck effect.
- the device 1 consists of an elongate, plate-shaped uniformly composed body or module with two contact elements 18 projecting from the body.
- the two opposite sides of the device 1 having the largest area constitute the so-called hot and the cold side of the device 1.
- the surface on the hot side is adapted to abut against a source of heat, for example a catalyst or a car engine, and the surface on the cold side is adapted to abut against a cooling element, which, for example, is connected to the cooling system of a car.
- the device 1 comprises a number of n-doped and p-doped thermoelectric semiconductor elements 10, below referred to as thermocouples, arranged in parallel rows.
- thermocouples 10 are alternatingly connected in series, i.e. each p-doped thermocouple is connected in series with two neighbouring n-doped thermocouples and vice versa, one connection to a neighbouring thermocouple being arranged on the cold side of thermocouple and the other on the hot side of the thermocouple, except the first 10a and the last 10b thermocouple in the series. These two thermocouples are connected to contact elements 18 for external contacting of the device 1.
- the thermocouples 10 are formed as elongate parallelepipeds with rectangular end surfaces.
- thermocouples 10 are cast into a body 12 which, according to a first embodiment, consists of a ceramic material, an enamel, a binder and microballoons or micro- spheres 13 embedded and distributed in the body 12; and according to a second embodiment, of a ceramic material and microballoons or microspheres 13.
- the thermocouples 10 extend between opposite sides of the body 12 so that the end surfaces of thermocouples 10 are not covered by the body 12 and form, together with the opposite sides of the body 12, two opposite even surfaces.
- thermocouples 10 On the hot and the cold side of the device, the end surfaces of the thermocouples 10 are provided with a first, sputtered, very thin and electrically conductive inner layer 14 as described above.
- the material of this inner layer 14 is compatible with the material of which the thermocouples 10 are made and therefore constitutes a so-called barrier layer or transition layer between the thermocouples 10 and further contacting layers. Thanks to the sputtering, the first layer 14 can be made very thin.
- thermocouples 10 On the barrier layer 14 and on the surface of the body 12 which is positioned between the thermocouples 10 that are to be interconnected, there is applied a second high velocity flame sprayed outer contacting layer 16 of a material which yields excellent electric conduction between the thermocouples 10.
- the outer contacting layer 16 is somewhat thicker than the barrier layer 14 and is responsible for the electric conduction between the thermocouples 10.
- the contacting layer 16 forms the elongate conduction paths which connect the thermocouples 10 in series .
- thermocouples 10a, 10b In one end of the device 1, on its cold side, there are arranged two elongate, rectangular contact elements of sheet metal 18 mentioned by way of introduction.
- the contact elements 18 are at one end 18a fixed to the first and the last thermocouple 10a, 10b connected in series and project therefrom in parallel with the end surfaces of the thermocouples 10 in the longitudinal direction of the device 1 in such manner that the contact elements 18 at their other end 18b project beyond the actual device.
- the contact elements 18 are at said one end 18a point welded to the respective thermocouples 10a, 10b and are intended for external electric connection of the device 1.
- the device 1 is further enclosed by a wet-sprayed, sintered electrically insulating protective layer 20.
- a wet-sprayed, sintered electrically insulating protective layer 20 is further enclosed by a wet-sprayed, sintered electrically insulating protective layer 20.
- the parts 18b of the contact elements 18 which project from the body of the device are not provided with any further coating.
- the device 1 can be provided with one more powder-sprayed protective layer 22.
- the layer 22 is arranged to yield on the one hand reinforcement of the device 1 and, on the other hand, a more uniform temperature distribution across the hot and the cold side of the device 1. This embodiment is illustrated in Fig. 9.
- the device 1 assumes the shape of a parallelepiped having the approximate dimensions 120 x 40 x 10 mm, the contact elements 18 projecting from the body being excluded.
- the thermocouples 10 have a length of 8 mm and the rectangu- lar end surfaces have the dimensions 4 x 5 mm.
- the material of the thermocouples 10 is lead-telluride with dopes added.
- the rectangular contact elements 18 which are arranged for external connection of the device are made of copper.
- the body 12 consists of a ceramic material, alumina or aluminium oxide (Al 2 0 3 ) ; a cement, calcium aluminate (3CaO-Al 2 0 3 ) ; an enamel, 94C1001 Plux supplied by Cookson Matthew Ceramics; and microballoons 13, Fillite 150 supplied by Astmoor Industrial Estate, Sil-cell 140 supplied by
- the body 12 is made of a ceramic material, aluminium orthophosphate (A1H 2 P0 4 ) ; and microballoons 13, Ecco- spheres supplied by Emerson & Cuming Inc.
- the material of the barrier layer 14 is on the hot side tin-telluride (Sn-Te) and on the cold side nickel-antimony (Ni-Sb) , which materials are compatible with the lead-telluride of which the thermocouples 10 are made.
- the material of the outer contacting layer 16 is copper.
- the barrier layer 14 has a thickness of about 5 ⁇ m and the outer contacting layer 16 has a thickness of about 100 ⁇ m.
- the material of the protective, insulating, wet- sprayed layer 20 is an enamel, more specifically 94C1001 Plux supplied by Cookson Matthew Ceramics.
- the optionally additionally applied protective layer 22 is of zirconium dioxide (Zr0 2 ) , which yields the properties that have been described above .
- Fig. 10 illustrates an alternative embodiment of the invention.
- the body 12 is made in two layers with different porosity, an inner layer 12a between two outer layers 12b.
- the outer layers 12b and the inner layer 12a together form a body which is to the other components as is the uniformly composed body 12 in the manner described above.
- the surface layers 12b typically have a thickness of 0.5 mm and have no admixed microballoons at all.
- the inner layer 12a may comprise a larger amount of microballoons 13 than in the case of the body 12 according to the above-mentioned preferred embodiment .
- thermocouples 10 consist of hot-pressed semiconductor elements containing a mixture of lead (Pb) , tellurium (Te) and dopes which have been produced in a manner known per se, which will therefore not be described in more detail.
- Pb lead
- Te tellurium
- the thermocouples 10 are not finally heat treated when they are placed in the first part 31 of the mould but constitute so-called green ele- ments.
- thermocouples 10 are, when being arranged in the mould, provided on their end surfaces with a first barrier layer 14 which is applied by sputtering and which on the hot side is of tin-telluride and on the cold side of nickel -antimony.
- a second part 32, the cover, of the mould is arranged in liquid-tight connection with the first mould part 31 which at one end is formed with an aperture for pouring of casting composition 11.
- the parts of the mould together constitute a mould 30.
- the dimensions of the respective parts 31, 32 of the mould are such that the end surfaces of the thermocouples 10 abut in a liquid- tight manner against the inwardly directly surfaces of the parts 31, 32 of the mould.
- the mould 30 is then placed on its end, whereupon a casting composition 11 is poured into the mould 30 under vibration.
- the casting composition 11 is produced by mixing 55% C96 supplied by H ⁇ ganas, 20% calcium aluminate, 5% 94C1001 Plux supplied by Cookson Matthew Ceramics, all pulverulent, and 20% Fillite 150 supplied by Astmoor Industrial Estate. After careful mixing of the powders and the balloons, water is added so that a slurry having a thick consistency is obtained. This slurry consists of said casting composition 11 and is poured into the mould 30 provided with thermocouples 10. The casting composition 11 is then allowed to harden at room temperature to a ceramic body 12 containing the thermocouples 10 cast into the body 12.
- the device is, according to said first embodiment, allowed to air-dry for at least 24 h.
- the device is as a so-called green body ready to be heat-treated, which takes place in a vacuum oven for 30 min, the pressure in the oven chamber being pumped down to 5 x 10" 6 atmospheres.
- the chamber as filled to atmospheric pressure with nitrogen (N 2 ) or argon (Ar) and is then heated to about 700 °C; the heating time should be at least 1 h. This temperature is then kept for at least 30 min, whereupon cooling takes place in the oven when switched off .
- the casting composition is produced by mixing 2/3 of aluminium ortho- phosphate solution (e.g. 48% A1H 2 P0 4 , MAP, supplied by Albright & Wilson U.K. Ltd.) and 1/3 of silicon dioxide spheres (e.g. Eccospheres supplied by Emerson & Cuming Inc.) in the size range 30-180 ⁇ m.
- aluminium ortho- phosphate solution e.g. 48% A1H 2 P0 4 , MAP, supplied by Albright & Wilson U.K. Ltd.
- silicon dioxide spheres e.g. Eccospheres supplied by Emerson & Cuming Inc.
- This slurry is stirred for about 3 min and then constitutes the casting composition 11 which is poured into the mould 30.
- the casting composition 11 is then allowed to harden in a drying cabinet at 40 °C for about twelve hours. Then the temperature in the drying cabinet is raised to 80 °C, and the casting composition is allowed to harden for approximately five more hours .
- the device is now, according to said second embodiment, as so-called green body ready for heat treatment.
- This heat treatment is carried out in an oven, at room atmosphere and at atmospheric pressure, at about 200 °C for about three hours.
- the next step is to provide the device 1 with conduction paths 16 for mutual electric connecting in series of the thermocouples 10 and for external connection of the device 1 by means of the first and the last thermocouple 10a, 10b contained in the connection in series.
- This is carried out by arranging masks or templates 36 on the cold and the hot side of the device 1.
- the masks 36 are formed with rectangular holes and after being arranged on the device 1, each hole encircles end surfaces of two neighbouring thermocouples 10, one being p-doped and the other n-doped, and also the intermediate surface of the body 12 so that the thermocouples can be connected in series.
- thermocouples 10a, 10b whose end surfaces are intended to constitute the first and the last end surface of said connection in series, the corresponding holes in the mask 36 which is to be arranged on this side are designed so that only said first and said last end surface are encircled by each hole.
- thermocouples 10 contain- ed in the device 1 are now connected in series with the copper-layer-coated end surfaces of the first and the last thermocouple 10a, 10b, said end surfaces being arranged on the cold side of one end of the device.
- HVOF is carried out in the following steps:
- a powder of the material that is to be applied is supplied to a HVOF spray gun; the powder is mixed with a carrier gas supplied to the gun and is carried by the carrier gas to a nozzle; at the outlet of the nozzle a flame is produced by means of combustion gas supplied to the gun together with oxygen; the powder leaves the outlet of the nozzle at high speed, about 500 m/s, the powder melting as it passes through the flame and being sprayed in the form of molten droplets onto the object that is to be coated and forming a surface coating thereof .
- thermocouple 10a, 10b External electric connection of the device 1 is then made possible by applying to the end surface of said first and said last thermocouple 10a, 10b an elongate, thin rectangular contact element 18 of copper.
- the two contact elements 18 are at their respective one end 10a welded to said end surfaces by spot welding.
- the contact elements 18 project from the respective thermocouples 10a, 10b perpendicular thereto in the longitudinal direction of the device 1 in parallel with the end surfaces of the thermocouples 10 so that the respective other ends 18b of the contact elements 18 project beyond the actual device, which is best seen in Fig. 7.
- a protective, electrically insulating layer of enamel 20 is applied.
- the layer 20 is applied by wet spraying.
- the enamel layer 20 is applied in such manner that the entire device, including the body 12 and the thermocouples 10, together with the contacting layers 14, 16 are enclosed by the enamel layer 20.
- the parts of the contact elements 18 which project beyond the body 12 are not coated with enamel .
- a final heat treatment of the device is effected by sintering in a furnace at about 700 °C until the device has reached the same temperature as the furnace and then for about 10 min more. Cooling then takes place in the furnace when switched off. In this final heat treatment, enamelling of the enamel layer 20 is effected.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Powder Metallurgy (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU46619/99A AU4661999A (en) | 1998-05-20 | 1999-05-20 | Thermoelectric device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9801798A SE9801798A0 (en) | 1998-05-20 | 1998-05-20 | Thermoelectric device |
SE9801798-1 | 1998-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999063791A2 true WO1999063791A2 (en) | 1999-12-09 |
WO1999063791A3 WO1999063791A3 (en) | 2000-03-16 |
Family
ID=20411403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SE1999/000861 WO1999063791A2 (en) | 1998-05-20 | 1999-05-20 | Thermoelectric device and method for manufacturing of said device |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU4661999A (en) |
SE (1) | SE9801798A0 (en) |
WO (1) | WO1999063791A2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010035724A1 (en) | 2010-08-28 | 2012-03-01 | Daimler Ag | Manufacturing method of motor vehicle component e.g. heat exchanger with thermoelectric generator, involves contacting semiconductor element of thermoelectric generator in series with overlying conductive material layer |
DE102012205098A1 (en) * | 2012-03-29 | 2013-10-02 | Evonik Industries Ag | Thermoelectric components based on dry pressed powder precursors |
DE102013219541A1 (en) * | 2013-09-27 | 2015-04-02 | Evonik Industries Ag | Improved process for the powder metallurgical production of thermoelectric components |
US20190181320A1 (en) * | 2017-12-13 | 2019-06-13 | Purdue Research Foundation | Electric generator and method of making the same |
GB2585045A (en) * | 2019-06-25 | 2020-12-30 | Sumitomo Chemical Co | Thermoelectric device |
US11056633B2 (en) | 2016-01-21 | 2021-07-06 | Evonik Operations Gmbh | Rational method for the powder metallurgical production of thermoelectric components |
US20220181533A1 (en) * | 2019-03-15 | 2022-06-09 | Mitsubishi Materials Corporation | Thermoelectric conversion module |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5364495A (en) * | 1976-11-22 | 1978-06-08 | Matsushita Electric Ind Co Ltd | Ceramic case for thermoelectric transducer |
US4459428A (en) * | 1982-04-28 | 1984-07-10 | Energy Conversion Devices, Inc. | Thermoelectric device and method of making same |
US4687879A (en) * | 1985-04-25 | 1987-08-18 | Varo, Inc. | Tiered thermoelectric unit and method of fabricating same |
US4907060A (en) * | 1987-06-02 | 1990-03-06 | Nelson John L | Encapsulated thermoelectric heat pump and method of manufacture |
EP0834930B1 (en) * | 1990-04-20 | 2001-10-17 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric semiconductor deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
CH680541A5 (en) * | 1990-07-12 | 1992-09-15 | Landis & Gyr Betriebs Ag | |
JPH09153647A (en) * | 1995-11-29 | 1997-06-10 | Chichibu Onoda Cement Corp | Heat conductive substrate for thermoelectric conversion module |
-
1998
- 1998-05-20 SE SE9801798A patent/SE9801798A0/en not_active Application Discontinuation
-
1999
- 1999-05-20 AU AU46619/99A patent/AU4661999A/en not_active Abandoned
- 1999-05-20 WO PCT/SE1999/000861 patent/WO1999063791A2/en active Application Filing
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010035724A1 (en) | 2010-08-28 | 2012-03-01 | Daimler Ag | Manufacturing method of motor vehicle component e.g. heat exchanger with thermoelectric generator, involves contacting semiconductor element of thermoelectric generator in series with overlying conductive material layer |
DE102012205098A1 (en) * | 2012-03-29 | 2013-10-02 | Evonik Industries Ag | Thermoelectric components based on dry pressed powder precursors |
WO2013144107A3 (en) * | 2012-03-29 | 2014-01-23 | Evonik Industries Ag | Thermoelectric components based on dry pressed powder precursors and method for the production thereof |
DE102012205098B4 (en) * | 2012-03-29 | 2020-04-02 | Evonik Operations Gmbh | Thermoelectric components based on dry pressed powder precursors |
DE102013219541A1 (en) * | 2013-09-27 | 2015-04-02 | Evonik Industries Ag | Improved process for the powder metallurgical production of thermoelectric components |
US9553249B2 (en) | 2013-09-27 | 2017-01-24 | Evonik Degussa Gmbh | Method for producing thermoelectric components by powder metallurgy |
DE102013219541B4 (en) * | 2013-09-27 | 2019-05-09 | Evonik Degussa Gmbh | Improved process for the powder metallurgical production of thermoelectric components |
US11056633B2 (en) | 2016-01-21 | 2021-07-06 | Evonik Operations Gmbh | Rational method for the powder metallurgical production of thermoelectric components |
US20190181320A1 (en) * | 2017-12-13 | 2019-06-13 | Purdue Research Foundation | Electric generator and method of making the same |
US20220181533A1 (en) * | 2019-03-15 | 2022-06-09 | Mitsubishi Materials Corporation | Thermoelectric conversion module |
GB2585045A (en) * | 2019-06-25 | 2020-12-30 | Sumitomo Chemical Co | Thermoelectric device |
Also Published As
Publication number | Publication date |
---|---|
SE9801798A0 (en) | 1999-11-21 |
SE9801798D0 (en) | 1998-05-20 |
SE9801798L (en) | |
AU4661999A (en) | 1999-12-20 |
WO1999063791A3 (en) | 2000-03-16 |
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