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WO1999053529A3 - Modification of polymer optoelectronic properties after film formation impurity addition or removal - Google Patents

Modification of polymer optoelectronic properties after film formation impurity addition or removal Download PDF

Info

Publication number
WO1999053529A3
WO1999053529A3 PCT/US1999/007970 US9907970W WO9953529A3 WO 1999053529 A3 WO1999053529 A3 WO 1999053529A3 US 9907970 W US9907970 W US 9907970W WO 9953529 A3 WO9953529 A3 WO 9953529A3
Authority
WO
WIPO (PCT)
Prior art keywords
film
dopants
organic
modification
alternatively
Prior art date
Application number
PCT/US1999/007970
Other languages
French (fr)
Other versions
WO1999053529A2 (en
Inventor
James C Sturm
Thomas R Hebner
Original Assignee
Univ Princeton
James C Sturm
Thomas R Hebner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton, James C Sturm, Thomas R Hebner filed Critical Univ Princeton
Priority to JP2000543997A priority Critical patent/JP2002511637A/en
Priority to EP99918499A priority patent/EP1101244A4/en
Priority to AU36399/99A priority patent/AU3639999A/en
Priority to US09/673,204 priority patent/US7090890B1/en
Priority to KR1020007011393A priority patent/KR20010042689A/en
Publication of WO1999053529A2 publication Critical patent/WO1999053529A2/en
Publication of WO1999053529A3 publication Critical patent/WO1999053529A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The methods of this invention involve modification of an organic film after it has been deposited by either adding new dopants into it from top or bottom surface, or by causing dopants to leave the film from its top or bottom surface. In the examples of these methods, the emitting color of light emitting diodes are modifed based on doped polymers by locally introducing dopants causing different color emission into the film by local application of a solution containing desired dopant to the film surface (by ink-jet priniting, screen printing, local droplet application, etc.). This covers the difficulties of encountered with direct patterning of three separately formed organic layers (each which uniformely coats an entire surface when formed) into regions for separate R, G, and B devices due to sensitivities of the organic materials to chemicals typically used with conventional patterning technologies. Alternatively, dopants may be introduced in an organic film (16) by diffusion from one layer (18, 19) into the film (16). Alternatively, dopants may be selectively removed form a film with solvents, etc.
PCT/US1999/007970 1998-04-13 1999-04-12 Modification of polymer optoelectronic properties after film formation impurity addition or removal WO1999053529A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000543997A JP2002511637A (en) 1998-04-13 1999-04-12 Method for modifying the optoelectronic properties of a polymer by adding or removing impurities from the film composition
EP99918499A EP1101244A4 (en) 1998-04-13 1999-04-12 CHANGING THE OPTOELECTRONIC PROPERTIES OF A POLYMER AFTER THE FORMATION OF A THIN LAYER, THE ADDITION OR THE REMOVAL OF IMPURITIES
AU36399/99A AU3639999A (en) 1998-04-13 1999-04-12 Modification of polymer optoelectronic properties after film formation impurity addition or removal
US09/673,204 US7090890B1 (en) 1998-04-13 1999-04-12 Modification of polymer optoelectronic properties after film formation by impurity addition or removal
KR1020007011393A KR20010042689A (en) 1998-04-13 1999-04-12 Modification of polymer optoelectronic properties after film formation impurity addition or removal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8149298P 1998-04-13 1998-04-13
US60/081,492 1998-04-13

Publications (2)

Publication Number Publication Date
WO1999053529A2 WO1999053529A2 (en) 1999-10-21
WO1999053529A3 true WO1999053529A3 (en) 2000-07-20

Family

ID=22164535

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/007970 WO1999053529A2 (en) 1998-04-13 1999-04-12 Modification of polymer optoelectronic properties after film formation impurity addition or removal

Country Status (5)

Country Link
EP (1) EP1101244A4 (en)
JP (1) JP2002511637A (en)
KR (1) KR20010042689A (en)
AU (1) AU3639999A (en)
WO (1) WO1999053529A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1110108B1 (en) * 1998-07-29 2005-09-07 The Court of Napier University Optical fibre for display application
US6641859B1 (en) * 2000-06-08 2003-11-04 Eastman Kodak Company Method of making an emissive layer for an organic light-emitting device
KR100389195B1 (en) * 2000-12-08 2003-06-27 (주)신화엔지니어링종합건축사사무소 Blue light emitting organic electroluminescnt device using tetrahydrochrysene as light emitting material
JP2002224604A (en) * 2001-01-31 2002-08-13 Hitachi Ltd Pattern transfer device, pattern transfer method, and method of manufacturing transfer master
US20040265622A1 (en) * 2003-06-24 2004-12-30 Eastman Kodak Company Light emitting display
KR100740303B1 (en) * 2004-12-16 2007-07-18 엘지전자 주식회사 High efficiency organic EL device
JP4830941B2 (en) * 2007-03-27 2011-12-07 セイコーエプソン株式会社 Manufacturing method of organic EL device
JP2012079484A (en) * 2010-09-30 2012-04-19 Toppan Printing Co Ltd Organic electroluminescent element and manufacturing method thereof

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
US4104091A (en) * 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
US4251285A (en) * 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
US5116781A (en) * 1990-08-17 1992-05-26 Eastman Kodak Company Zinc diffusion process
US5583349A (en) * 1995-11-02 1996-12-10 Motorola Full color light emitting diode display
US5681756A (en) * 1994-05-31 1997-10-28 Motorola Method of fabricating an integrated multicolor organic led array
US5693962A (en) * 1995-03-22 1997-12-02 Motorola Full color organic light emitting diode array
US5866922A (en) * 1996-12-23 1999-02-02 Motorola, Inc. Color display with integrated semiconductor leds and organic electroluminescent devices
US5953587A (en) * 1997-11-24 1999-09-14 The Trustees Of Princeton University Method for deposition and patterning of organic thin film
US5972052A (en) * 1996-05-30 1999-10-26 Nec Corporation Fabrication method of solid electrolytic capacitor

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615943A (en) * 1969-11-25 1971-10-26 Milton Genser Deposition of doped and undoped silica films on semiconductor surfaces
US4104091A (en) * 1977-05-20 1978-08-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Application of semiconductor diffusants to solar cells by screen printing
US4251285A (en) * 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
US5116781A (en) * 1990-08-17 1992-05-26 Eastman Kodak Company Zinc diffusion process
US5681756A (en) * 1994-05-31 1997-10-28 Motorola Method of fabricating an integrated multicolor organic led array
US5693962A (en) * 1995-03-22 1997-12-02 Motorola Full color organic light emitting diode array
US5583349A (en) * 1995-11-02 1996-12-10 Motorola Full color light emitting diode display
US5972052A (en) * 1996-05-30 1999-10-26 Nec Corporation Fabrication method of solid electrolytic capacitor
US5866922A (en) * 1996-12-23 1999-02-02 Motorola, Inc. Color display with integrated semiconductor leds and organic electroluminescent devices
US5953587A (en) * 1997-11-24 1999-09-14 The Trustees Of Princeton University Method for deposition and patterning of organic thin film

Also Published As

Publication number Publication date
AU3639999A (en) 1999-11-01
KR20010042689A (en) 2001-05-25
WO1999053529A2 (en) 1999-10-21
EP1101244A4 (en) 2004-03-31
EP1101244A1 (en) 2001-05-23
JP2002511637A (en) 2002-04-16

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