WO1998031054A1 - Photoelectric transducer and device using the same - Google Patents

Abstract

A photoelectric transducer comprising a photoelectric transducer module in which a plurality of structural units are arranged on a flat or curved face. Each structural unit includes a semiconductor photoelectric transducer element, a biaxial-refraction optical system having an aperture larger than the maximum diameter of the semiconductor part of the transducer element, and a biaxial-reflection optical system which faces to the refraction optical system, with the transducer element therebetween. The distance between the refraction optical system and the reflection optical system is shorter than the focal length of the refraction optical system. Therefore, the photoelectric transducer can be used in a non-tracking type without increasing the area of the semiconductor photoelectric transducer element unlike flat plate type solar cells.

Description

 Description Photoelectric conversion device and its application

 The present invention relates to a photoelectric conversion device that converts light energy into electric power, and more particularly to a condensing photoelectric conversion device in which a photoelectric conversion element is combined with a condensing optical system. The present invention is suitable for general-purpose photovoltaic power generation, similar to ordinary solar cells. In addition, the appearance of portable electronic devices is important, and power sources for consumer products with low directivity of light incidence, It can also be used for high-voltage power supplies and sensors. Background art

 Conventionally known solar cell modules are roughly classified into a condensing type and a non-concentrating type. In the latter case, as shown in Fig. 2, the flat solar cell elements (cells) 20 are arranged in a plane with as few gaps as possible to increase the filling efficiency, and connected by wiring leads 21. Therefore, such a solar cell module has a structure in which cells composed of semiconductor elements are spread. On the other hand, the former condensing type belongs to the same category as that of the present invention, but there are some configuration examples as shown in FIG.

First, an example of uniaxial focusing is disclosed in Japanese Patent Application Laid-Open No. Hei 6-37334. ing. This is shown in Fig. 3 (A-1). A single-axis low-magnification light concentrator 34 composed of a glass lens is applied to the solar cell 33

 Japanese Patent Application Laid-Open No. 58-68988 discloses an example mainly of a tracking type of biaxial focusing. This is shown in Fig. 3 (A-2). A 1-mm square solar cell chip 31 is mounted on a wiring board 30 and is combined with a refracting lens 32 of 10 to 20 mm in size. Further, an example of biaxial focusing in which the refracting lens 32 is separated from the solar cell chip 31 is disclosed in Japanese Patent Application Laid-Open No. 7-231111. Disclosure of the invention

 In order to reduce the cost of the solar cell module, a concentrating module that can reduce the area of the power generation element per module area is effective.

 However, in general, in the above-mentioned conventional technique of uniaxial focusing, the focusing magnification is small, and the required area of the semiconductor photoelectric conversion element mounted on the module does not become much smaller than the module area.

On the other hand, in the above-described conventional biaxial focusing technique, the area of the semiconductor photoelectric conversion element can be reduced because the focusing magnification can be increased, but the light incident on the light at an angle deviating from the optical axis can be focused. In general, a tracking type equipped with a sun tracking mechanism is generally used so that the direct light always enters the optical system perpendicularly, because the light is easily deviated from the element. Furthermore, it is necessary to increase the allowable incident angle. Therefore, the only light that can be used is direct paraxial light, and almost all scattered light cannot be used.

 An object of the present invention is to provide a biaxial concentrating photoelectric conversion device that can be used in a non-tracking type and does not need to have a semiconductor photoelectric conversion element having a large area as in a flat-panel solar cell, and its application. Equipment.

 The object is to provide a semiconductor photoelectric conversion element, a biaxial refractive optical system having an opening diameter equal to or larger than the maximum diameter of the semiconductor portion of the semiconductor photoelectric conversion element, and a semiconductor photoelectric conversion device facing the biaxial refractive optical system. A biaxial reflective optical system, which is located on the semiconductor photoelectric conversion element side from the focal point of the biaxial refractive optical system on the opposite side of the element as a structural unit, and a plurality of such structural units are arranged in a plane or curved surface This can be achieved by a photoelectric conversion device having a photoelectric conversion module configured as described above.

 In FIG. 1, reference numeral 1 denotes a semiconductor photoelectric conversion element (hereinafter abbreviated as an element), reference numeral 2 denotes a constituent unit (hereinafter referred to as a cell), reference numeral 3 denotes a photoelectric conversion module (hereinafter referred to as a module), reference numeral 4 Is an array of refraction lenses forming a biaxial refracting optical system, reference numeral 5 is a wiring board on which the element 1 is mounted, and reference numeral 6 is an array forming a biaxial reflecting optical system.

In the present invention, by disposing the biaxial reflecting optical system and the semiconductor photoelectric conversion element inside the focal point of the biaxial refractive optical system, the refracted light by the biaxial refractive optical system is reflected by the biaxial reflecting optical system. The system can be further converged and incident on the element, and the allowable incident angle can be widened Therefore, it can be used in a non-tracking type. In addition, since the condensing optical system is configured using a biaxial refracting optical system and a biaxial reflecting optical system capable of condensing light at a high magnification, the area of the element can be kept small. It can be.

 Note that the present invention can also be used for a tracking type. BRIEF DESCRIPTION OF THE FIGURES

 FIG. 1 is a schematic partial cross-sectional view of a module illustrating the configuration of the present invention.

 FIG. 2 is a bird's-eye view showing an arrangement of cells constituting a conventional solar cell module.

 FIG. 3 is a cross-sectional view and a bird's-eye view showing an example of a conventional concentrating solar cell module.

 FIG. 4 is an explanatory sectional view showing the relationship between the operation and the size of the device of the present invention in comparison with the conventional device.

 FIG. 5 is a characteristic relation diagram for explaining the photoelectric conversion operation of the device of the present invention.

 FIG. 6 is an explanatory sectional view and a characteristic diagram showing a light-condensing operation of a refractive optical system in the light-condensing system of the photoelectric conversion element of the present invention.

 FIG. 7 is a schematic plan view and a cross-sectional view illustrating an example of the configuration of a condensing optical system according to the present invention.

FIG. 8 is a view for explaining the light collecting operation in the light collecting optical system of the present invention. It is an example of a cell cross section and an optical path.

 FIG. 9 is a schematic cross-sectional view for explaining the configuration of the module of the present invention and a method of configuring the module.

 FIG. 10 is a schematic plan view of a module for explaining one embodiment of the module of the present invention.

 FIG. 11 is a schematic plan view of one embodiment showing a positional relationship between a light-collecting system, a wiring board, and cells constituting a module of the present invention and a wiring state.

 FIG. 12 is a schematic plan view of a module showing another embodiment of the module of the present invention.

 FIG. 13 is a schematic bird's-eye view showing one embodiment relating to the element structure and the cell configuration of the present invention.

 FIG. 14 is a schematic cross-sectional view showing the configuration of a module to which the element exemplified in FIG. 13 is applied.

 FIG. 15 is a schematic bird's-eye view and a cross-sectional view of a device illustrating another embodiment and a cell configuration of the device of the present invention.

 FIG. 16 is a schematic sectional view showing another embodiment of the device of the present invention.

 FIG. 17 is a schematic plan view for explaining wiring and element arrangement for explaining one embodiment of modularization of the embodiment shown in FIG.

FIG. 18 shows another example of the device and modularization of the present invention. It is a cross section showing an example.

 FIG. 19 is a bird's-eye view schematic diagram for explaining one embodiment relating to the application of the present invention to a power generation system.

 FIG. 20 is a plan explanatory view of the configuration of the module array in one embodiment relating to the application of the present invention.

 FIG. 21 is a schematic bird's-eye view of another embodiment related to the application of consumer equipment of the present invention.

 FIG. 22 is a schematic plan view showing a configuration example of a module to which the present invention is applied. BEST MODE FOR CARRYING OUT THE INVENTION

The element used in the conventional flat type or condensing type has a structure as shown in Fig. 4 (A), and the thickness of the semiconductor part of the element is usually smaller than the diffusion length of a small number of carriers. , But the lateral dimensions of the device are much longer. In such a device, an extremely thin n-type diffusion layer 401 is formed on the surface of a p-type substrate 400, and electrons and holes formed by incident light 402 are formed. On the other hand, electrons, which are minor carriers of the p-type substrate, are collected by the n-type diffusion layer 401 in the diffusion length region 403 and contribute as output. When light 404 with high light concentration is incident on a distant region in the device, electrons are collected from the electron-hole pair generation position to the n-type region in 405 in the diffusion region, and are mainly nearby Is taken out as an output from the negative electrode 406 of the negative electrode, Current injection occurs in the part where light irradiation is weak, and that loss results in output loss. Also, the holes are finally averaged and output from the positive electrode 408, but at this time, resistance loss occurs due to carrier redistribution in the P-type region 400.

 On the other hand, when the maximum diameter of the semiconductor portion of the device is about twice or shorter than the diffusion length of the minority carrier as proposed in the present invention, FIG. As shown, the carrier redistribution on the substrate 410 caused by the non-uniformity of the light irradiation required only a short distance movement, and the electrons generated by the weak light 411 The diffusion region 4 12 almost overlaps with the one generated in 4 14, and is collected by the common negative electrode 4 15 via the nearby n-type region 4 13. The output depends on the total amount of light incident on the device, and the effect of incident non-uniformity is reduced.

When the above conditions are satisfied, the influence of the shape of the semiconductor portion of the device is reduced. For example, the output depends on the total amount of incident light even in a spherical shape as shown in Fig. 4 (C) or an irregular mass not shown here. These characteristics are advantageous when concentrating the solar cell, and uniform light collection is not required, and it does not depend much on the incident direction. large. Such an effect can be expected when the maximum diameter of the semiconductor portion of the element is about twice the diffusion length of the minority carrier. Further, as is apparent from the above description, in the present invention, the element dimensions are determined by the thickness of the semiconductor portion and the lateral direction. The reason why the maximum diameter is displayed instead of the dimension is that the present invention captures the shape of the semiconductor portion of the element from the viewpoint of the diffusion length of the minority carrier.

 The maximum diameter depends on the quality of the semiconductor material, and the longer the carrier lifetime, the larger the device can be made. The relationship between the carrier diffusion length and the carrier life time is as shown in Fig. 5 (A), taking silicon as an example. In the case of a standard film quality of 1 OO ^ s, the carrier diffusion length Ld is about 350 ^ m, and the above-mentioned situation until the maximum diameter is about 700 m, which is twice as large. Is realized. In the currently available high-quality silicon crystal, the diffusion length after processing into a device is about 1 mm, and the above situation is realized up to a maximum diameter of about 2 mm. In the case of quality (S0G) for solar cell applications, the life time is about 30 s and the carrier diffusion length is about 200 μm. Therefore, the above condition is satisfied for an element whose maximum diameter is up to about 400 m, so that the carrier collection requires only one pair of positive and negative contacts. Of course, there may be more than one contact.However, loss of carrier recombination at the contact and light blocking by the electrode increases, so that the contact It is desirable that the area of the unit be small as long as the series resistance of the element can be increased, and the number of contact pairs is preferably small.

Fig. 5 (B) shows the efficiency and carrier characteristics of a device with a thickness of 500 μm and a standard high-quality surface (surface recombination speed: s to 1000 cm / s). FIG. 4 is a diagram showing the relationship with a film, with the temperature and the light collection magnification as parameters. At the standard temperature (25 ° C), the efficiency of about 19% can be obtained in the case of non-light-collecting with a normal substrate, but the efficiency of more than 21% can be obtained with 10 times the light-collection. In addition, even if the operating conditions are slightly higher than the actual temperature of 75 ° C, an efficiency of about 17% can be achieved by 10-fold focusing. Efficiency of more than 15% can be expected at 75 ° C even with a carrier film power of about 30 μs for SOG silicon.

 Fig. 5 (C) shows the efficiency obtained when the carrier temperature is 30 s and the carrier temperature is 75 CC for the same 500 m thick element. FIG. 4 is a diagram showing the magnification as a parameter. Although the efficiency increases with the increase in the light collection magnification, the efficiency is saturated at a light collection magnification of about 15 times because the series resistance of the electrode system is set to 1 Ω, and the efficiency decreases at higher light collection magnifications. I do. Therefore, in practice, it is desirable to collect light of about 10 times and at most about 20 times.

Fig. 5 (D) shows the efficiency of the device when the light-gathering power is 10 times, with the temperature and the surface recombination velocity S as parameters. The surface recombination rate is expressed in logarithm. Efficiency tends to saturate below the surface recombination velocity of 1000 cmZs, and even if the recombination velocity increases to 100,000 cmZs, the light was condensed. In this case, the decrease in efficiency is relatively small. On the other hand, the effect of the temperature rise is large, and the efficiency decreases by 5 points as the temperature rises from 2 δ ° C to 75 ° C. Therefore, the rise of the element temperature is suppressed even if the light concentration is about 10 times In this regard, it is advantageous that the element is small. In other words, the smaller the element, the larger the ratio of the size of the element as the heat source to the size of the surrounding medium as the heat absorber, and the shorter the heat conduction distance, the greater the cooling effect than the larger element. The temperature rise of the element can be suppressed.

Next, the concept of the light-collecting system that constitutes the cell will be described using a case where a hemispherical refractive lens is used as a biaxial refractive optical system and a hemispherical reflecting mirror is used as a biaxial reflective optical system. I will say. FIG. 6 (A) is a cross-sectional view showing an optical path of incident light by a general spherical lens. The lens 600 has a shape in which a hemispherical upper part A-P-B of radius R and a cylindrical lower part A-B-B'-A 'are connected by A-〇-B. For simplicity, consider the incident light parallel to the main axis 0-C of the condensing system. The incident light 61 enters the lens surface P at a distance r from the main axis of the light collection system at an angle of 0 with respect to the lens surface, travels through the lens after refraction. At this time, Q is the point of intersection of the optical path and the lower end surface A — 0 — B of the hemispheric lens, and it passes through the intersection C of the main axis of the condensing system and the virtual sphere A — C – B of the hemispheric lens and is perpendicular to the main axis of the condensing system. The intersection of the optical surface C — Q ′ and the optical path is Q ′, the distance to the main axis of the converging system, and 0 — Q and C-Q ′ are r ′ and r ″. The lower end face of the lens 0 — (r / r ') ² and (r / r ") ² at positions B and C, respectively. Figure 6 (B) shows the dependence of the light collection magnification on the incident angle 0 calculated for a medium with a refractive index of 1.5. When the incident angle 6> is in the range of 0 to 45 °, the position of the lower end face of the hemispherical lens Although the light-gathering magnification is about 2 times regardless of the incident angle, a light-gathering rate of about 9 to 14 times can be obtained at the lower end position of the virtual sphere of the hemispherical lens. In Fig. 6 (B), the side length (2r ") of the light-receiving surface when condensed is shown by the ratio to the lens diameter (2R). When the incident angle 0 is 45 °, Even in this case, the side length of the light receiving section is 20% or less of the lens radius.

 In the case of a refractive index of 1.5, the focal point of the lens is located at a distance of 1 to 2 times the lens radius from the center 0 of the lens, and in the vicinity of this point, the light is condensed at a higher magnification or Can reduce the size of the light-receiving surface, but if the light-gathering magnification is too high, the temperature of the element will increase, and precise control of the position will be required, increasing the disadvantages that are not preferred in practice I do. Therefore, it is desirable to arrange the element a little away from the focal point of the lens.

For a paraxial ray, light can be condensed almost along the main axis of the condensing system, but for light incident at an angle to the main axis of the condensing system, it is about 10 times higher. Even off-axis light has large off-axis and deviates from a small light receiving unit. The same applies to incident light having a twist component with respect to the main axis of the light-collecting system. Therefore, it is necessary to arrange the elements in a condensing optical system that is a combination of a biaxial refracting optical system and a biaxial reflecting optical system to form a cell. First, light is collected by a biaxial refractive optical system, and paraxial light is directly incident on the element at a medium magnification of about 10 times. If the angle between the incident light and the optical axis of the condensing system is large, the light will deviate from the element, but will be reflected by the biaxial reflecting optical system located behind the element. Thus, most of the reflected light is redirected to the device. Also, of course, the biaxial reflecting optical system used here is located closer to the element than the focal point of the biaxial refractive optical system. Further, it is desirable that the reflectance in the wavelength region where the photoelectric conversion is effectively performed is higher than the reflectance of the surface of the mounted element. This allows light to enter the element at a large expected angle. In addition, in order to exhibit a refocusing effect even for incident light having a torsional component, it is desirable that the radius of curvature of the biaxial reflection optical system be smaller than that of the biaxial refractive optical system. .

Fig. 7 shows an example of the design of the condensing optical system that composes the cell. FIG. The surface of the lens 71 constituting the refractive optical system is spherical, and the radius of curvature thereof is R. Since the cells 72 are arranged in a densely packed manner in a plane, the external shape viewed from above is a hexagon, and the size is a square 73 inscribed in the great circle 71 of the lens sphere. Is determined to be inscribed in circle 7 4. That is, the unit lens on the light-receiving surface side of the cell has a round hexagonal column shape obtained by cutting a sphere into a hexagon determined as described above. When formed under such conditions, the cell surface can form an obtuse angle with the adjacent cell surface at an obtuse angle rather than a right angle when the cells are densely packed.For example, a lens array can be embossed. In the case of forming by using a die, the die can be easily cut out and the lens surface can be widened most. On the other hand, the reflecting surface 75 circumscribes the hexagon. It is composed of a spherical surface 76 with a radius of curvature intermediate between the radius of the circle 74 and the radius of curvature of the lens. Then, it is configured such that the virtual sphere 71 of the spherical lens constituting the refractive optical system and the ridge of the hexagonal prism 72 intersect at the same point. The element is centered on the optical axis, and the distance between the side walls of the hexagonal prism is centered on the intersection of the optical axis with the plane containing the intersection of the ridge of the hexagonal prism and the virtual sphere of the spherical lens. It is placed in a rectangular parallelepiped space 77 whose height is 1/4 and height is 1Z2. The position of the reflecting optical system is optimized between the focal point of the lens 71 and the cubic space 77 depending on the conditions of the incident light.

Here, as is clear from the above description, the maximum diameter of the semiconductor portion of the element does not exceed the diameter of the circumscribed sphere of the rectangular parallelepiped space 77. In other words, in terms of the relationship with the radius of curvature of the lens, the maximum diameter of the semiconductor portion of the element does not exceed 15 ^{1 2} 2 ( ^{) / 2} times the radius of curvature of the lens. In addition, it is desirable that the maximum diameter of the semiconductor portion of the device be less than twice the diffusion length of the minority carrier, and the radius of curvature of the lens is minimum and the minority of the semiconductor portion of the device in the raw material is small. key ya is 2 ^7/1 5 ^1/2 times the diffusion length of Li §. lenses are possible as long rather is desired to small rather formed, it is when the diffusion length of the minority key turbocharger Li a short Accordingly, the radius of curvature of the lens can be made smaller, but on the other hand, as the diffusion length of the minority carrier becomes shorter, the element characteristics deteriorate. the maximum value of the radius of curvature of a few Canon Li 2 ^7/2/1 5 ^{1 2} times trough the diffusion length of a in a raw material in the semiconductor portion of the device Everywhere Become. By the way, when silicon is used as the semiconductor of the element (diffusion length lmm of the minority carrier), the radius of curvature of the lens is 2.92 mm.

 Fig. 8 shows the optical path in such a cell configuration. In the figure, the light is reflected on the side of the cell. However, in practice, the side of the cell does not need to have a reflective structure. You can think.

 Fig. 8 (A) shows the light incident parallel to the optical axis on the spherical lens at the position 81 on the optical axis, the position at an opening angle of 15 degrees 82, the position at an opening angle of 30 degrees 83 Shows the optical path when the light enters each cell. When a material with a refractive index of 1.5, such as acrylic resin, is used, the focal point is approximately two to three times the radius of curvature from the point of incidence of the spherical lens. When silicon is used as the semiconductor of the element, the focal length is 5.84 to 8.76 mm because the maximum design value of the lens radius of curvature is 2.92 mm. As described below, the thickness of the cell can be reduced to 9 mm or less. The incident light travels while converging in the lens, and mostly passes through the photoelectric conversion element region 77. Light that has passed through the outside of the element region partially reaches the element region after being reflected by the reflecting mirror. In other words, all the light beams parallel to the optical axis that enter the cell light receiving unit are captured in the element region.

Fig. 8 (B) shows the optical path of light entering the same incident point at an angle of 15 degrees. In this case, part of the incident light is directly Most of the light reaches the device area after being reflected by the reflector.

 Fig. 8 (C) shows the optical path of light that enters the same incident point at an angle of 30 degrees. In this case, no light directly reaches the element region, and light incident on the near side of the lens when viewed from the light incident direction is reflected by the reflector and then reaches the element region, but the direction of the lens is changed. The light incident on this side enters the adjacent cell, passes through the lower side of the element region of the adjacent cell in such a way as to pass through, and after being reflected by the reflecting mirror, is emitted again to the outside of the cell. However, when viewed from the light incident side, the projection area on the side opposite to the cell is small, and most reaches the element region.

 Fig. 8 (D) shows the optical path of light entering the same incident point at an angle of 45 degrees. In this case, most of the incident light reaches the element area of the adjacent cell and is captured. This cell captures light incident on the adjacent cell.

 Therefore, in such a condensing optical system, of the light incident on the region of the light receiving surface having an aperture angle of 90 degrees, the incident light having an angle of 45 degrees or less with the optical axis of the condensing optical system is considered. However, most of the angle can be captured by the photoelectric conversion element except for a decrease at a part where the angle is around 30 degrees. When the angle between the optical axis of the condensing optical system and the optical axis exceeds 45 degrees, shielding by the adjacent cell occurs on the light-receiving surface of the cell, but the amount of light received by the entire module is the same as that of a flat plate. On the other hand, in the element region, there is a possibility that incident light from a cell next to the cell concerned may be captured.

The module closely packs such hexagonal prism unit cells, It is configured by connecting them in series and parallel as appropriate. If such a module is installed at an elevation of 35 degrees to the south at a position of 35 degrees north latitude, it will be direct for about 6 hours in the daytime without changing the elevation angle due to the difference in solar altitude in summer and winter. Sunlight can be captured by approximately 4- to 16-fold light collection, and scattered light with an aperture angle of 90 degrees can also be captured by 4- to 16-fold light collection. This is a sufficient condition for practical operation of solar cells. In addition, scattered light can be captured even during the time when direct light cannot be captured. Conversely, for modules with the same light receiving area, the required amount of solar cells is only 1/4 to 1Z16, which greatly reduces the amount of expensive semiconductor materials used. Can be reduced. Also. Equipment for cell manufacturing. Labor costs and other consumables can be reduced at the same rate.

 The module is configured by arranging cells in a plane and interconnecting the cells. To realize this structure, it is possible to integrate individual cells after forming each cell, but more productively, the refractive optical system, As shown in Fig. 1, the elements, wiring, and reflective optics are grouped together, and as shown in Fig. 1, a member 4 with integrated refractive optics, a wiring substrate 5 with integrated elements, and a reflective optics are integrated. It is desirable that the module 3 be formed by separately forming the members 6 thus formed and by laminating and integrating these members.

By reducing the size of the element, the following four effects are produced. First, the cell can be made smaller and the overall thickness of the module can be reduced. can do. In particular, by making the cell size about 1 mm or less and using a condensing optical system that combines refraction and reflection, the light condensing operation can be performed with a thickness equivalent to the protective glass of an ordinary flat plate module. Modules can be configured. Also, the mechanical strength of the cell can be significantly improved compared to the conventional case where the cell is simply made thin. Further, as a result, it becomes easy to impart flexibility to the module. Since the power generation unit is small, there is a large degree of freedom in designing the module, and it is possible to flexibly cope with various applications from electric power to small consumer products in order to adapt to any shape. Become. In addition, the device can be handled as particles, and a continuous manufacturing process based on the fluidity of the particles can be constructed, greatly improving productivity. It is possible to do.

Second, if the maximum diameter of the semiconductor portion of the element is about twice or less than the diffusion length of the minority carrier in the semiconductor, it is unavoidable when the light-collecting operation is performed. The deterioration of the photoelectric conversion characteristics due to the non-uniform light condensing is suppressed to a small extent. This is because, when the maximum diameter of the semiconductor portion is smaller than twice the diffusion length of the minority carrier, the distribution of the excited photogenerating carrier depends on the local incident intensity of the light. Therefore, the resistance is almost uniform in the element depending on the total amount of light incident on the element.Therefore, the influence of the resistance due to the carrier redistribution in the element observed in the conventional element. This is because the problem of characteristic degradation due to parallel connection of cells having different characteristics is reduced. Therefore, the characteristics The advantage of condensing light can be brought out to the medium magnification range of 10 to 20 times without deteriorating.

 Third, since the current generated from the cell becomes smaller, the contact and wiring for the element and the wiring between cells constituting the module can be made smaller and thinner. As a result, wiring materials can be reduced to the minimum necessary.o

 Fourth, since the module is composed of a large number of cells, it is easy to obtain a high voltage in a small area, and it is possible to simplify and reduce the size of the power supply device during DCDC conversion or DCAC conversion.

 On the other hand, by making the element smaller, the number of cells constituting the module increases, and the assembling work increases, but this is the same configuration or the repetition of the work, and the mechanization is easy. Can be overcome by automation.

As described above, when the photoelectric conversion device of the present invention is used for electric power, it is not necessary to perform solar tracking or seasonal elevation angle adjustment, and it is possible to use scattered light. It is possible to construct a non-tracking type module that can be used similarly in a similar form to the module. In addition, since the effective light receiving angle can be increased, a power generation device having a small directivity and a small output fluctuation depending on the direction can be configured when used in a small consumer product. Although the above description has been made with respect to the non-tracking type in which the effect of the present invention is great, it goes without saying that the present invention can also be used in the tracking type. Hereinafter, the present invention will be described based on examples.

 Example 1

 An actual configuration example will be described with reference to FIG. The photoelectric conversion element 91 is a single-crystal silicon solar cell, and is a substantially rectangular parallelepiped having a thickness of 200 μm and a side length of 1 mm. The device was manufactured by the usual high-efficiency solar cell manufacturing method. Since the details of the manufacturing method are out of the scope of the present invention, only a brief description will be given below.

 The substrate is a 150-111111 diameter -shaped 、 2, (100), 2 Qcm, and has a surface diffusion of 0.2 m thick on both sides at 900 ° C by a solid phosphorus diffusion source. went. Next, after removing the phosphorus diffusion layer in the region including the portion where the positive electrode is to be formed on the rear surface and reoxidizing, a negative electrode contact mainly composed of Ag is printed on a part of the rear surface phosphorus diffusion region. It is formed by firing at 50 ° C, and the positive electrode contact mainly composed of Ag A1 is also printed and fired in a part of the area where the phosphorus diffusion layer is removed. Formed. This was diced to a width of 1 mm, and the cut surface was lightly chemically etched with an etchant containing P to obtain a large number of 1 mm square elements. A pair of the positive electrode contact 92 and the negative electrode contact 93 is provided in a portion near the back side of each element 91.

In addition, a wiring board 94 for arranging and interconnecting the elements was formed in parallel with the formation of the above elements. The substrate material is a film made of transparent polyethylene terephthalate (PET) resin, and the wiring is mainly Ag. It is formed by a screen printing method using a paste as a component and fired at 150 ° C.

As shown in Fig. 10, the elements 91 are aligned with the center of a hexagon with a vertex distance of 4 mm, the center of which is aligned with the center, and 200 rows vertically and 2 3 1 rows on the substrate. Were arranged. In FIG. 10, the middle part is omitted by a dotted line. As shown in FIG. 11, the element 91 is connected in parallel in the row direction by a positive electrode wiring 112 and a negative electrode wiring 113, and the positive electrode wiring 112 and the negative electrode are connected at both ends of the row. The wires 1 1 and 3 were short-circuited and connected in series in units of rows. In addition, the hexagonal prism-shaped spherical lens 95 constituting the refractive condensing system of the cell in FIG. 9 was formed by flowing borosilicate glass melted by heating into a mold. The lens surface has a radius of curvature of 2.82 mm, and a densely packed structure corresponding to the position of each element on the wiring board 94 is arranged in a row with a vertical length of 202 rows and 23.3 rows. As shown in FIG. 10, there is no corresponding element in the outermost peripheral portion of the lens array, and this portion does not constitute a cell. This occurs when the incident angle is One Do rather large, _c that is, in consideration of the cell or these incident light next, when forming the cell to the outermost peripheral portion of les Nzua Ray, this Since some cells do not have other cells around them, the total amount of incident light from the adjacent cells is smaller and the output is lower than the cells with other cells, resulting in the cells that make up the module Output becomes uneven. In order to prevent this, this configuration is used. In addition, the portion indicated by the dotted line at the corner has no adjacent cells on the four sides. Has not formed. This lens array has a thickness of 4.5 mm and a flat bottom surface. This lens array is provided with a flat margin area of 10 mm width to form a frame around the lens array. In addition, the reflecting mirror 96 forming the cell reflecting optical system in FIG. 9 has a structure in which a reflecting film is covered on a spherical lens array, and the radius of curvature provided corresponding to the element position is set. A film coated with A1 with a thickness of about 1 μm was formed on the surface of an acrylic resin with a 2.4 mm spherical lens. The overall thickness is about 1.2 mm, and the opposing surface of the reflecting surface is flat. The external dimensions are the same as the shape including the margin around the lens array.

The components of the lens array 95, the wiring board 94 on which the elements are integrated, and the reflector 97 on which the reflector 96 is formed are made of a 0.2 mm-thick ethylene-vinyl-acetate (EVA). The module was laminated and integrated with a thermoplastic filler as described above to form a frameless module of 720 mm square. In addition, the periphery was sealed with butyl rubber, and reinforced with A1 reinforcement frames. A terminal board is attached to a part of the reinforcing frame material, a lead for collecting the column output is drawn out and connected to it, and a backflow prevention diode is connected in series with the output output terminal. It was inserted and the whole was put in a terminal box, and the module was completed. This output can be obtained from the positive terminal 1 1 2 ′ or 1 12 ″ and the negative terminal 1 13 ′ or 1 13 ″ in FIG. The choice depends on connecting the modules in series and parallel. There are two types of terminals, the positive electrode and the negative electrode. It is provided for convenience of connection and connection, and may be one system.

The total area of the element is 462 cm ² , which corresponds to 8.9% of the module area of 5,184 cm ² . The effective light receiving area is 92.4% of the module area. For normal incidence AMI.5 light, the output voltage of the module was 116 V, the output current was 0.89 A, and the conversion efficiency was 14.8%. The device area is about an order of magnitude less than in the non-light-collecting case, but the output per module is about 77 W, and the output per light-receiving area is almost the same.

 In the example of FIG. 9, the element 91 is arranged on the light receiving surface side of the wiring board 94 with the contact part facing downward. The main light receiving surface of the element may be disposed on the opposite side of the light receiving surface of the wiring board 94 with the element 91 facing downward, and may be provided so as to face the reflecting mirror. In this embodiment, a combination of glass and PET is used. However, the lens may be formed of a transparent resin such as PMMA. In order to reduce the reflection loss at the boundary between the lens material and the transparent substrate material, it is necessary that the refractive indices be close to each other, and in practice, it is desirable that they match within ± 02.

 Example 2

In the first embodiment, the shape of the cells to be mounted for fine packing is a hexagonal prism. However, according to the gist of the present invention, the shape of the cells is not particularly limited. As shown in Fig. 12, square lenses 1 2 5 are arranged in a square lattice. They may be arranged, and the element 91 may be arranged at the center.

 The element was formed in the same manner as in Example 1, the side length was 1 mm, and the thickness was 200 βm. Four hundred and four hundred mra pitches were arranged on the wiring board, each in a row and column, and the rows were connected in series and each row was connected in parallel. The lens is made of poly-methyl methacrylate (PMMA), the radius of curvature of the lens surface is 2.82 mm, and the vertical and horizontal pitch is 4 mm and the height is 202 Rows, 202 were accumulated in one row. As shown in FIG. 12, there is no corresponding element in the outermost peripheral portion of the lens array. This lens array has a thickness of 4.5 mm and a flat bottom surface. In this lens array, a flat margin area of 1 Omm width was provided to form a frame around the lens array. In addition, the reflecting mirror corresponding to the reflecting mirror 96 forming the reflecting optical system of the cell in FIG. 9 is a spherical lens made of PMMA having a radius of curvature of 2.4 mm arranged corresponding to the element position. It has a reflective film in which a ray is covered with A1 with a thickness of about 1 μm. The total thickness is about 1.4 mm, and the opposing surface of the reflecting surface is flat. The external dimensions are the same as those of the lens array including the margin around the lens array.

This module in the area 4 0 0 cm ² of the device 5 of the module area ^{6, 8 5 6 cm 2.} 8% der Ri, AMI. 5 of the output voltage 1 1 5 V for normally incident light, The conversion efficiency was 16% at an output current of 1.28 A, but the output of incident light was slightly lower than that of Example 1 especially in oblique directions.

Example 3 Embodiments 1 and 2 show examples in which a rectangular parallelepiped element is flattened in a cubic space in which the element is mounted, as shown in FIG. 9, that is, the shortest side is arranged in a vertical direction. However, according to the gist of the present invention, the arrangement of the elements is not limited. An example is shown in FIG.

 The element 1331 is rectangular, and has a positive electrode 132 and a negative electrode 133 at one end. The contacts are respectively connected to a positive electrode wiring 134 and a negative electrode wiring 135 formed on the transparent resin substrate 136. As shown in Fig. 14, the element is inserted into the opening 144 provided in the reflective optical system array 141, and the gap between the reflective optical system array 141 and the element 131 is made of resin. And the whole is integrated with the refractive lens array 142.

 The substrate used to form this module was p-type, (100), 2 Ωcm, 500 μm thick, which was cut into 1 mm squares and phosphorus diffused throughout. did. Positive and negative contacts were formed on both sides of one end of this chip, and they were connected in such a way that they were erected on the positive and negative wires formed on the transparent resin wiring board 13 6 . The element was aligned with the recess provided in the reflective optical system array 141 and integrated with the lens array 144 and the wiring board 136 by vacuum lamination using a low-viscosity filler. .

In this module, the light collection area could be extended to the vicinity of the reflector, and the output for obliquely incident light was higher than in Examples 1 and 2, especially. In the element of this design, a pair of electrodes is formed in the thickness of the rectangular parallelepiped.However, when productivity is taken into consideration, the electrode with higher symmetry is more likely to automatically adjust the orientation when mounting. It has great flexibility and is advantageous in the manufacturing process. Figure 15 is an example of them. Fig. 15 (A) shows an example in which the contact with the wiring is at three places. The outside is the positive electrode 132, the center is the negative electrode 133, and the transparent resin is used for each. It is connected to the positive electrode wiring 134 and the negative electrode wiring 135 formed on the substrate 136. The element 13 1 used here has p 'diffusion region 13 2' and n · diffusion region 13 3 'corresponding to the contact part, as shown in the same figure (B-1). Are provided. In this case, when the element is connected to the wiring board, the positive electrode and the n-diffusion region are not erroneously connected even if the direction of the element is reversed.

In addition, as shown in FIG. 4B, P ′ diffusion region 13 2 ′ and n · diffusion region 13 3 ′ are provided symmetrically with respect to the four sides, and the positive electrode is provided at the four corners. When the negative electrode 133 is provided at the center of the 132 side, the polarity is correctly connected regardless of which side is connected to the wiring board. Therefore, in the process, it is only necessary to take measures for regulating the "side" of the element so as to correctly contact the wiring of the wiring board. Also, in the above example, if the positive electrode and the negative electrode, and the p ′ region and the n region are exchanged, the structure is the same even if the polarities are opposite. In addition, as shown in the same figure (B-2), providing a contact area with more wires than the number of wires in the element takes into account carrier recombination at the contact. Do Although it is not always desirable, as shown in Fig. 15, by arranging the contact area on the device with high symmetry two or more times, it is difficult to manufacture cells. It is rather advantageous.

 In the present embodiment, the elements are arranged on the side opposite to the light receiving surface with respect to the wiring portion when configuring the cell / module, but it is not obstructed to arrange them on the same side as the light receiving surface. .

 Example 4

 In the embodiments described above, a rectangular parallelepiped element is used in the cubic space in which the element is mounted, but the element shape is not limited to a rectangular parallelepiped. When a granular element described below is used, the symmetry of the element becomes higher, so that the handling of the element when forming a cell / module is simplified, and the productivity of the module is improved. be able to.

Fig. 16 is a schematic cross-sectional view of the mounted granular silicon cell. The substrate 160 is a p-type, 0.5 Ωcm crystal and has a diameter of 0.4 mm. An n-type region 161 is formed on the surface by diffusion, and an opening 164 is provided in a part of the region. A positive electrode 163 is connected to the exposed p region of the opening 164, and the contact portion is a high concentration p region 165. Further, a negative electrode 162 is connected to a part of the surface n region 161. In Fig. 16, the cross section of each of the positive electrode and the negative electrode is indicated by a circle, but this is because the cross section is shown at the intersection with the mesh formed by a thin line. is there. At least Ag should be applied to the surface of the wire that contacts the n-type region. A metal layer having a metal layer as a main component and a metal layer containing Ag containing at least A1 is formed on the surface of the striated line in contact with the P-type region. The mesh line spacing is 0.4 mm, and the pitch of the same type of line is 1.2 mm. The diameter of the wire is 60 m, which is actually a double track, but is shown simply in the figure.

 FIG. 17 shows a state in which this element is arranged on a wiring board. The condylar granular elements 160 are arranged in a matrix at 1.2 mm intervals. The wiring board is basically a plain weave cross formed with insulating filaments 16 6, but the filaments 16 7 (indicated by the thin dotted lines in the figure) that intersect the element positions are actually removed. There is no. In addition, the lines on both sides of the element position are replaced with the negative electrode line 162 and the positive electrode line 163. Therefore, the elements are connected in parallel in the vertical direction, and are connected in parallel by connecting the positive electrode wire on the outside and the negative electrode wire of the element row adjacent to the element row in series. A series connection has been realized for each element row.

 The formed module is 600 mm square, 6 mm thick, and its surroundings are protected by a 14 mm aluminum frame. Under standard measurement conditions, the output is 42.8 W, the output voltage is 238 V, the short-circuit current is 0.24 mA, and the module efficiency is 12%.

 Example 5

According to the gist of the present invention, the type of element constituting the photoelectric conversion device is not limited. Next, when a thin film solar cell is used for the element, This will be described with reference to FIG.

A transparent conductive film 18 1 is formed on a glass substrate 180 with a desired pattern, and a 5 nm p ^: amorphous silicon layer 18 is formed thereon by a known plasma CVD method. Form 2. The ρ ⁺ amorphous silicon layer 18 2 is formed so as to cover one end of the underlying transparent conductive film 18 1, and a 400 nm i-layer 18 3, 50 Amorphous silicon layers of nm layer 184 are respectively formed. Layers of this covers the is et a [rho ¹ layer 1 8 2 parts covering the transparent conductive film 1 8 1, and on the opposite side of the transparent conductive film 1 8 1 are made patterns shaped to expose. Next, a lattice-like pattern is formed on most of the 1 'layer 184 by the deposition of aluminum, and a negative electrode 185 is formed covering the i-layer 183 so as to be continuous therewith. The positive electrode 185 'is formed so as to be in contact with only the transparent conductive film 181. In the case of a normal non-light-collecting type, the negative electrode 18 5 and the positive electrode 18 δ ′ are continuous, and a series connection of cells is realized. In the case of the present invention, however, the glass substrate 1 This is separated together with 80 and mounted on the focusing optics as individual cells. The size of each cell is several mm square or about 1 mm square.

In order to facilitate this separation work, it is preferable that the glass substrate 180 be previously provided with a grid-like cut from the back surface so that it can be easily cut. The mounting on the condensing optical system can be handled in the same manner as in the above-described embodiment. Example 6

 Next, an embodiment using the photoelectric conversion device of the present invention for electric power will be described. Fig. 19 shows an example of application to a house connected to a commercial power source. The solar cell module 190 is as described in the first embodiment, and the rated output per module is 115 V and 1.28 A. In the example, seven modules are connected in parallel to one branch line 191, via a backflow prevention diode 1992, and 14 modules are connected in parallel to another single branch line 1993. Were connected in parallel and connected to the inverter input. The control and use of electric power after the integration is well-known, and it is known to convert to AC and connect it to commercial power on the AC side, or to connect to the DC side and install the integration It is used for electrical equipment (indicated by the dotted line in the figure), for example, rotating equipment such as air conditioners and pumps.

In this embodiment, a large number of small cells are connected in series, so that the voltage can be easily increased in units of modules, and the voltage required for linking to 100 V is a single voltage. Obtained by module. On the other hand, the output current per module becomes smaller, so that the required number of modules are connected in parallel to form an array to obtain the desired power capacity. Conventional modules of the same size are composed of cells as large as 10 cm square, so even if all the cells in the module are connected in series, the rated output is 24 V, 3 A It is about. Therefore, in order to use it directly for power supply for home electric appliances or to link with commercial power supply, connect about 5 modules in series or use DC-DC conversion. It is necessary to boost to more than 100 V. In addition, the output from each module must be thick enough to withstand a 3 A current load, and the connection of each cell in the module must be connected to this current capacity. Necessary, the overall wiring tended to be thicker. In addition, some module failures cause a group of modules (strings) connected in series to the module to malfunction, thus greatly affecting the system and urgent repair. Was required.

On the other hand, the module of the present embodiment can generate a high voltage required for power use in units of modules, so that all the current collection systems can be connected in parallel. Therefore, emergency repair of the system can be performed simply by disconnecting the defective module from the system, and recovery can be performed by replacing the defective module with a good product at any time and reconnecting to the photovoltaic power system. Therefore, the maintenance of the photovoltaic array is easy. Another feature is that it can respond to demands for increased system capacity by increasing the number of modules, which makes it very flexible to respond to system changes. In this embodiment, an array in which 14 modules are connected to one branch line is standard.In general, the modules are arranged symmetrically with respect to the branch line to reduce the number of branch lines, and the total wiring from the module to the branch line is performed. Some measures have been taken to shorten the length. An array in which seven modules are connected to one branch line 191 shows the concept of expansion, and expansion can be performed on a module-by-module basis. In this figure, the backflow prevention diode 192 is shown outside the module, but in general, as shown in Fig. 20, It is housed in a terminal box 201 provided on the module 190 together with a cable connection terminal (not shown), and has a waterproof structure integrated with the module. Since the output voltage of the module is high, it is desirable to use a coaxial structure for the output cable. One end of the coaxial cable 202 is fixed to the connection terminal of the module, and the other end is connected to the other end. A waterproof connector (not shown) for connecting to the collector line 203 is connected. The current collection line is a current collection harness in which the waterproof connection points 204 are arranged at intervals according to the module standard, and are connected by the touch through the above-mentioned waterproof connector. This configuration improves the workability and maintains the maintenance when replacing a defective module.

 Furthermore, in the present invention, the output current per module is small, but conversely, a thin conductive wire can be used for the wiring inside the module, which saves the material constituting the module. are doing.

 Example 7

Next, an embodiment using the photoelectric conversion device of the present invention for consumer use will be described. Fig. 21 shows an example of application to a portable satellite communication device (manufacturable station). A system will be set up for use as an independent DC power supply in combination with a battery. The power required for transmission by the communication equipment is 40 W and the storage voltage is 12 V. Face 2 1 1 of the housing 2 1 0 a 4 5 X 4 5 cm ^2, the power generation efficiency 1 5% nominal 3 I by the solar cell of 0 W is possible. By mounting the solar cell on one main surface of the housing, it is possible to cover the average required power when facing the sun. However, since a satellite tracking antenna is usually placed on the lid of the case, it is desirable to mount the solar cell on the back of the case. In this case, only the main surface of the housing is practically somewhat insufficient in area, and cannot be used at the time of communication. In this case, if an odd number of solar cell modules 2 12 are used and a part of the module exposes the light-receiving surface outside the housing when stored, it will be charged even when moving and not used Over-discharge of the storage battery can be prevented. The combination and usage of the solar cell and the storage battery are based on known methods.

In this case, advantages of applying the present invention will be described below with reference to FIG. In this embodiment, since the cell is small, to generate a voltage of 12 V, a cell array 2 22 over a power generation unit area 2 21 of about 30 mm of the module 220 is generated. May be connected in series. This is achieved by connecting the negative pole of a cell row and the positive pole of an adjacent cell row outside the cell array. In the structure described in Example 2, a single cell array with a width of 450 mm can generate a rated power of about 190 mA, so that a power generation unit with a width of 2.3 W is generated for each power generation unit with a width of 30 mm. Is possible. 15 rows of power generation units can be arranged in the main surface area of the housing. In parallel connection of each power generation unit, at least one pair of positive and negative electrodes 223, 223 * formed outside the cell array are connected alternately from above and below the power generation unit. This is achieved. Therefore, the power generation capacity per module is 35 W, and the output is at the end of the module. It is taken out from the positive and negative electrodes 222, 224 '. A rating of about 100 W can be obtained with three modules. Therefore, even when the solar cell module is placed on a horizontal surface, sufficient power can be supplied when operating communication equipment in a normal usage.

 To supply a voltage of 12 V in a conventional flat panel module, all cells are connected in series in a module whose area is almost equivalent to the main surface of the housing. In this case, if a part of the module is interrupted, the charging voltage cannot be secured even if the bypass diode is provided, and the power supply to the system is stopped. In the case of the present invention, the power generation units of 45 rows are operated in parallel, and even if a part of the power generation units cannot be generated, the current output of the part is only reduced and there is no voltage drop. In addition, the power supply is continued by the remaining power generation unit that is not shielded.

 As described above, according to the present invention, even if a relatively high-quality and expensive semiconductor material is used for the element, the power generation capacity of the module is not much different from that of the conventional flat module, and the cost is greatly reduced. It is possible to do so. This is because the module structure is more suitable for mass production by automation, and the production amount of cells can be almost the reciprocal of the light collection magnification.

According to the present invention, a high voltage can be easily obtained with a small module area, a commercial power voltage can be supplied by a single module, and it is suitable for use in an AC output module. It is also suitable for low-power consumer use. The required voltage can be obtained in a small area, and it has excellent design flexibility such as flexibility and phase adaptability, and can be used in a variety of applications. In each case, light can be taken in at a high angle, and it is easy to minimize the decrease in output with respect to partial light shielding. Even in a situation where power cannot be obtained, it is possible to effectively obtain generated power.

The present invention and Ga A s, Ga I nP of any crystal compound semiconductor, etc. Cu I nSe ₂ of which Karukopai Lai Bok based material, for the solar cell using other materials, and this is similarly applied to Can be done. In addition to glass, transparent optical plastics such as PMMA and polycarbonate may be used for the module material. It also includes structures composed of a combination of these materials and molding and integration of a single material.

Claims

δ 冃 range 1. a semiconductor photoelectric conversion element, a biaxial refractive optical system having an opening diameter equal to or larger than the maximum diameter of the semiconductor portion of the photoelectric conversion element, and a biaxial refractive optical system facing the biaxial refractive optical system and opposite to the photoelectric conversion element. A biaxial reflection optical system disposed on the photoelectric conversion element side from the focal point of the biaxial refractive optical system is a constituent unit, and a photoelectric conversion module in which a plurality of the constituent units are arranged in a plane or a curved surface is provided. A photoelectric conversion device characterized by: 2. The biaxial refractive optical system is built in a first flat plate, the biaxial reflective optical system is built in a second flat plate, and the first and second flat plates are 2. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion device is the same or a different flat plate.  3. The photoelectric conversion element in the structural unit is disposed inside an opening provided in the biaxial reflection optical system, and the photoelectric conversion device further has a wiring board. A plurality of output terminals extending from each of the photoelectric conversion elements to the outside of the structural unit, and the plurality of output terminals are connected to the wiring board. 2. The photoelectric conversion device according to claim 1.  4. The photoelectric conversion device according to claim 1, wherein the maximum diameter of the semiconductor portion of the photoelectric conversion element is not more than twice the minority carrier diffusion length of the semiconductor portion. 5. The maximum diameter of the semiconductor part of the photoelectric conversion element is 3. The photoelectric conversion device according to claim 2, wherein the photoelectric conversion device has a length equal to or less than twice the minority carrier diffusion length.  6. The photoelectric conversion device according to claim 3, wherein a maximum diameter of a semiconductor portion of the photoelectric conversion element is equal to or less than twice a minority carrier diffusion length of the semiconductor portion.  7. The lens constituting the biaxial refracting optical system and the mirror constituting the biaxial reflecting optical system in the structural unit have a spherical portion, and the radius of curvature of the spherical surface portion is the mirror. 2. The photoelectric conversion device according to claim 1, wherein said lens is smaller than said lens.  8. In the structural unit, the intersection of the first plane including the intersection of the first virtual sphere including the spherical portion of the lens with the side surface of the lens and the optical axis of the structural unit is defined. The above-mentioned photoelectric conversion element is placed in a rectangular parallelepiped space with the height being 1/4 of the distance between the opposing surfaces of the lens and the length of the vertical and horizontal sides as the center. The photoelectric conversion device according to claim 7, wherein the photoelectric conversion device is arranged.  9. The photoelectric conversion device according to claim 7, wherein the surfaces of the adjacent lenses and the surfaces of the adjacent mirrors intersect at an obtuse angle.  10. The photoelectric conversion device according to claim 1, wherein the reflectance of the biaxial reflection optical system in the structural unit is higher than the reflectance of a light receiving surface of the photoelectric conversion element. 1 1. The photoelectric conversion element is installed on a transparent substrate having wiring. 2. The photoelectric conversion device according to claim 1, wherein a refractive index of said transparent substrate is within ± 0.2 of a refractive index of said biaxial refractive optical system. 1 2. The lenses a curvature radius of the spherical portion is Ri few calibration Re A 2 ^7/1 5 ^1/2 der following diffusion length in the material in the semiconductor portion, the semiconductor portion of the photoelectric conversion element maximum diameter of the first claims characterized by the this is less than 1 5 ^1/2 / 2 ^5/2 times the curvature radius of the lenses spherical portion Item 7. The photoelectric conversion device according to Item 7.  13. The photoelectric conversion device according to claim 12, wherein a semiconductor portion of the photoelectric conversion element is made of Si.  14. The plurality of photoelectric conversion elements are arranged in a matrix direction, and the plurality of photoelectric conversion elements are connected in parallel in one of a row direction and a column direction, and are connected in parallel in the other. 2. The photoelectric conversion device according to claim 1, wherein the groups are connected in series.  15. The plurality of photoelectric conversion elements are arranged in a matrix direction, and the plurality of photoelectric conversion elements are connected in series in one of a row direction and a column direction, and are connected in series in the other. 2. The photoelectric conversion device according to claim 1, wherein the groups are connected in parallel. 16. A photoelectric conversion element that is not electrically connected is arranged on the outermost periphery of the plurality of photoelectric conversion elements arranged in the matrix direction. 16. The photoelectric conversion device according to claim 15, wherein: 17. The biaxial refracting optical system and the biaxial reflecting optical system in the structural unit are arranged outside the plurality of photoelectric conversion elements arranged in the matrix direction. The photoelectric conversion device according to claim 15, wherein  18. An electrical article comprising the photoelectric conversion device according to claim 1 as a power supply.  19. A power supply device comprising a plurality of the photoelectric conversion devices according to claim 1, wherein the plurality of photoelectric conversion devices are all connected in parallel.