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WO1998005066A3 - Procede et dispositif de detection et de mesure en cours de fabrication de couches pelliculaires - Google Patents

Procede et dispositif de detection et de mesure en cours de fabrication de couches pelliculaires Download PDF

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Publication number
WO1998005066A3
WO1998005066A3 PCT/US1997/013373 US9713373W WO9805066A3 WO 1998005066 A3 WO1998005066 A3 WO 1998005066A3 US 9713373 W US9713373 W US 9713373W WO 9805066 A3 WO9805066 A3 WO 9805066A3
Authority
WO
WIPO (PCT)
Prior art keywords
fiber optic
optic cable
wafer
reflected
probe
Prior art date
Application number
PCT/US1997/013373
Other languages
English (en)
Other versions
WO1998005066A2 (fr
Inventor
Paul Holzapfel
Robert F Allen
Warren Lin
James Schlueter
Chris Karlsrud
Original Assignee
Speedfam Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/798,803 external-priority patent/US5872633A/en
Application filed by Speedfam Corp filed Critical Speedfam Corp
Publication of WO1998005066A2 publication Critical patent/WO1998005066A2/fr
Publication of WO1998005066A3 publication Critical patent/WO1998005066A3/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

La présente invention concerne des procédés et appareil permettant la mesure sensiblement en temps réel, sur place et en cours de fabrication, de l'épaisseur réelle d'une couche superficielle d'une pièce à traiter, par exemple une plaquette à semi-conducteur. On a placé une sonde (500) à proximité du périmètre extérieur d'un tampon à polir (126), sur une table destinée à rendre chimiquement et mécaniquement planaire une surface, de façon que la sonde établisse un contact optique avec la surface de la plaquette (304) lorsqu'une portion de celle-ci s'étend au-delà du périmètre extérieur (330) du tampon à polir (126). On peut monter une buse (312) pour appliquer un courant d'air comprimé sur la surface du disque en cours d'inspection, afin d'enlever ainsi toute boue excédentaire de la région de la pièce à traiter en cours d'inspection. On emploie une source lumineuse à large bande (322) conjointement avec un câble à fibres optiques (318) pour diriger la lumière au niveau de la surface de la plaquette, ainsi qu'une sonde à deux branches afin que la lumière appliquée sur la surface de la pièce à traiter soit réfléchie en retour et captée par un capteur optique correspondant connecté à un câble à fibres optiques (320). La lumière réfléchie, captée et reçue par l'ensemble capteur récepteur et câble optique est alors envoyée à un spectrophotomètre (324) qui analyse celle-ci et émet un signal de sortie en direction d'un processeur (326) comportant un algorithme intelligent conçu pour calculer l'épaisseur de la couche superficielle. Dans un autre mode de réalisation, les caractéristiques réfléchissantes des couches semi-conductrices peuvent affecter la nature du signal réfléchi, des changements survenus dans le signal réfléchi pouvant être détectés, aux fins d'indiquer quand une couche métallique a été enlevée d'une couche d'oxyde.
PCT/US1997/013373 1996-07-26 1997-07-23 Procede et dispositif de detection et de mesure en cours de fabrication de couches pelliculaires WO1998005066A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US68771096A 1996-07-26 1996-07-26
US08/687,710 1996-07-26
US08/798,803 US5872633A (en) 1996-07-26 1997-02-12 Methods and apparatus for detecting removal of thin film layers during planarization
US08/798,803 1997-02-12

Publications (2)

Publication Number Publication Date
WO1998005066A2 WO1998005066A2 (fr) 1998-02-05
WO1998005066A3 true WO1998005066A3 (fr) 1998-03-05

Family

ID=24761512

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/013373 WO1998005066A2 (fr) 1996-07-26 1997-07-23 Procede et dispositif de detection et de mesure en cours de fabrication de couches pelliculaires

Country Status (2)

Country Link
TW (1) TW386276B (fr)
WO (1) WO1998005066A2 (fr)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US6913938B2 (en) 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
US6984198B2 (en) 2001-08-14 2006-01-10 Applied Materials, Inc. Experiment management system, method and medium
US6999836B2 (en) 2002-08-01 2006-02-14 Applied Materials, Inc. Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
US7047099B2 (en) 2001-06-19 2006-05-16 Applied Materials Inc. Integrating tool, module, and fab level control
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US7082345B2 (en) 2001-06-19 2006-07-25 Applied Materials, Inc. Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
US7096085B2 (en) 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance
US7101799B2 (en) 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US7201936B2 (en) 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US7272459B2 (en) 2002-11-15 2007-09-18 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7333871B2 (en) 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
US7337019B2 (en) 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US7354332B2 (en) 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7356377B2 (en) 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6352466B1 (en) 1998-08-31 2002-03-05 Micron Technology, Inc. Method and apparatus for wireless transfer of chemical-mechanical planarization measurements
US6714300B1 (en) * 1998-09-28 2004-03-30 Therma-Wave, Inc. Optical inspection equipment for semiconductor wafers with precleaning
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6861619B1 (en) 2000-02-07 2005-03-01 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6261853B1 (en) 2000-02-07 2001-07-17 Therma-Wave, Inc. Method and apparatus for preparing semiconductor wafers for measurement
US6491569B2 (en) 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US6676482B2 (en) 2001-04-20 2004-01-13 Speedfam-Ipec Corporation Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
KR100434189B1 (ko) * 2002-03-21 2004-06-04 삼성전자주식회사 화학 기계적 연마장치 및 그 제어방법
JP2005203729A (ja) 2003-12-19 2005-07-28 Ebara Corp 基板研磨装置
US20060079007A1 (en) 2004-10-08 2006-04-13 Applied Materials, Inc. System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss
US8917398B2 (en) 2011-08-28 2014-12-23 G & D Innovative Analysis Ltd. Method and apparatus for supervision of optical material production
US9573243B2 (en) 2014-11-04 2017-02-21 Headway Technologies, Inc. Method for adaptive feedback controlled polishing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
EP0663265A1 (fr) * 1993-12-22 1995-07-19 International Business Machines Corporation Technique et appareil de surveillance in situ pour la détection de la fin d'une opération chimique/méchanique de surfaçage
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
WO1996016436A1 (fr) * 1994-11-18 1996-05-30 Advanced Micro Devices, Inc. Procede de fabrication d'une suspension chimio-mecanique destinee au polissage et la suspension elle-meme
EP0718595A2 (fr) * 1994-12-21 1996-06-26 Hughes Aircraft Company Rejet automatique d'effets de diffraction dans la mesure de couches minces
EP0738561A1 (fr) * 1995-03-28 1996-10-23 Applied Materials, Inc. Procédé et dispositif pour le contrÔle et la detection in-situ de la fin d'une opération de polissage mécano-chimique
US5609511A (en) * 1994-04-14 1997-03-11 Hitachi, Ltd. Polishing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
EP0663265A1 (fr) * 1993-12-22 1995-07-19 International Business Machines Corporation Technique et appareil de surveillance in situ pour la détection de la fin d'une opération chimique/méchanique de surfaçage
US5609511A (en) * 1994-04-14 1997-03-11 Hitachi, Ltd. Polishing method
WO1996016436A1 (fr) * 1994-11-18 1996-05-30 Advanced Micro Devices, Inc. Procede de fabrication d'une suspension chimio-mecanique destinee au polissage et la suspension elle-meme
EP0718595A2 (fr) * 1994-12-21 1996-06-26 Hughes Aircraft Company Rejet automatique d'effets de diffraction dans la mesure de couches minces
EP0738561A1 (fr) * 1995-03-28 1996-10-23 Applied Materials, Inc. Procédé et dispositif pour le contrÔle et la detection in-situ de la fin d'une opération de polissage mécano-chimique

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US7174230B2 (en) 1999-07-29 2007-02-06 Applied Materials, Inc. Computer integrated manufacturing techniques
US7188142B2 (en) 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US7160739B2 (en) 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7047099B2 (en) 2001-06-19 2006-05-16 Applied Materials Inc. Integrating tool, module, and fab level control
US7082345B2 (en) 2001-06-19 2006-07-25 Applied Materials, Inc. Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
US8694145B2 (en) 2001-06-19 2014-04-08 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7101799B2 (en) 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US6913938B2 (en) 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US7201936B2 (en) 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7337019B2 (en) 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US6984198B2 (en) 2001-08-14 2006-01-10 Applied Materials, Inc. Experiment management system, method and medium
US7225047B2 (en) 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US6999836B2 (en) 2002-08-01 2006-02-14 Applied Materials, Inc. Method, system, and medium for handling misrepresentative metrology data within an advanced process control system
US7272459B2 (en) 2002-11-15 2007-09-18 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US7333871B2 (en) 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
US7205228B2 (en) 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US7354332B2 (en) 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7356377B2 (en) 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
US7096085B2 (en) 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance

Also Published As

Publication number Publication date
TW386276B (en) 2000-04-01
WO1998005066A2 (fr) 1998-02-05

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