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WO1997030452B1 - Loquet de page - Google Patents

Loquet de page

Info

Publication number
WO1997030452B1
WO1997030452B1 PCT/US1997/001567 US9701567W WO9730452B1 WO 1997030452 B1 WO1997030452 B1 WO 1997030452B1 US 9701567 W US9701567 W US 9701567W WO 9730452 B1 WO9730452 B1 WO 9730452B1
Authority
WO
WIPO (PCT)
Prior art keywords
data
ofthe
memory
coupled
node
Prior art date
Application number
PCT/US1997/001567
Other languages
English (en)
Other versions
WO1997030452A1 (fr
Filing date
Publication date
Priority claimed from US08/601,963 external-priority patent/US5724303A/en
Application filed filed Critical
Priority to AU19527/97A priority Critical patent/AU1952797A/en
Publication of WO1997030452A1 publication Critical patent/WO1997030452A1/fr
Publication of WO1997030452B1 publication Critical patent/WO1997030452B1/fr

Links

Abstract

Le dispositif de mémoire comprend un circuit de chargement de loquets des pages (122) assurant une entrée/sortie (E/S) sérielle au contrôleur microprogrammé (110) et transférant les bits E/S dans un ordre prédéterminé vers/depuis les loquets des pages (124). Les loquets des pages (124) sont connectés par de nombreuses lignes de bit à un ensemble de cellules de mémoire (126). Non seulement les loquets des pages (124) permettent une programmation et une lecture de secteurs dans l'ensemble de cellules de mémoire (126), mais également ils assurent une ou plusieurs des fonctions suivantes: ils sont directement accessibles au contrôleur microprogrammé en tant que zone de travail de mémoire RAM statique, ils peuvent être chargés directement depuis l'ensemble des cellules de mémoire pour faciliter les opérations 'lire-modifier-lire' sur des octets isolés et ils peuvent être chargés durant des opérations de programmation pour permettre des applications en temps réel.
PCT/US1997/001567 1996-02-15 1997-02-14 Loquet de page WO1997030452A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU19527/97A AU1952797A (en) 1996-02-15 1997-02-14 Page latch

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/601,963 1996-02-15
US08/601,963 US5724303A (en) 1996-02-15 1996-02-15 Non-volatile programmable memory having an SRAM capability

Publications (2)

Publication Number Publication Date
WO1997030452A1 WO1997030452A1 (fr) 1997-08-21
WO1997030452B1 true WO1997030452B1 (fr) 1997-10-30

Family

ID=24409426

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/001567 WO1997030452A1 (fr) 1996-02-15 1997-02-14 Loquet de page

Country Status (3)

Country Link
US (2) US5724303A (fr)
AU (1) AU1952797A (fr)
WO (1) WO1997030452A1 (fr)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6728851B1 (en) * 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6978342B1 (en) * 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US8171203B2 (en) * 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6701395B1 (en) 1998-02-06 2004-03-02 Analog Devices, Inc. Analog-to-digital converter that preseeds memory with channel identifier data and makes conversions at fixed rate with direct memory access
US6289300B1 (en) 1998-02-06 2001-09-11 Analog Devices, Inc. Integrated circuit with embedded emulator and emulation system for use with such an integrated circuit
EP0935195A2 (fr) 1998-02-06 1999-08-11 Analog Devices, Inc. Circuit intégré avec convertisseur analogique-numérique à haute résolution, un microcontrolleur et une mémoire à haute densité et émulateur correspondant
US6385689B1 (en) * 1998-02-06 2002-05-07 Analog Devices, Inc. Memory and a data processor including a memory
KR100290474B1 (ko) 1998-06-11 2001-06-01 박종섭 다단계 펄스 발생 회로 및 이를 이용한 플래쉬 메모리 셀의소거 방법
KR100282519B1 (ko) * 1998-09-09 2001-02-15 김영환 플래시 메모리의 데이터 리드속도 향상회로
US6067252A (en) * 1999-05-26 2000-05-23 Lattice Semiconductor Corporation Electrically erasable non-volatile memory cell with no static power dissipation
FR2798767B1 (fr) * 1999-09-16 2001-12-14 St Microelectronics Sa Procede d'ecriture en mode page d'une memoire non volatile electriquement programmable/effacable et architecture correspondante
US7102671B1 (en) 2000-02-08 2006-09-05 Lexar Media, Inc. Enhanced compact flash memory card
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
US6671204B2 (en) 2001-07-23 2003-12-30 Samsung Electronics Co., Ltd. Nonvolatile memory device with page buffer having dual registers and methods of using the same
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
GB0123421D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123410D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123419D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Data handling system
GB0123416D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123417D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Improved data processing
KR100454119B1 (ko) * 2001-10-24 2004-10-26 삼성전자주식회사 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들
US6781892B2 (en) * 2001-12-26 2004-08-24 Intel Corporation Active leakage control in single-ended full-swing caches
US6950918B1 (en) 2002-01-18 2005-09-27 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6957295B1 (en) 2002-01-18 2005-10-18 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
US20040153902A1 (en) * 2003-01-21 2004-08-05 Nexflash Technologies, Inc. Serial flash integrated circuit having error detection and correction
US6775184B1 (en) * 2003-01-21 2004-08-10 Nexflash Technologies, Inc. Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof
WO2004090737A2 (fr) * 2003-04-02 2004-10-21 Sun Microsystems, Inc. Verrou d'amplificateur de detection a signal de reaction a faible oscillation
US6822908B1 (en) * 2003-05-08 2004-11-23 Micron Technology, Inc. Synchronous up/down address generator for burst mode read
US6973519B1 (en) 2003-06-03 2005-12-06 Lexar Media, Inc. Card identification compatibility
EP1695304A4 (fr) 2003-12-17 2011-09-28 Lexar Media Inc Activation au point de vente d'un materiel electronique en vue d'eviter un vol
WO2005081891A2 (fr) * 2004-02-23 2005-09-09 Lexar Media, Inc. Memoire flash compacte securisee
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
US7490283B2 (en) * 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
US7464306B1 (en) * 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7158421B2 (en) * 2005-04-01 2007-01-02 Sandisk Corporation Use of data latches in multi-phase programming of non-volatile memories
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US7447078B2 (en) * 2005-04-01 2008-11-04 Sandisk Corporation Method for non-volatile memory with background data latch caching during read operations
US7463521B2 (en) * 2005-04-01 2008-12-09 Sandisk Corporation Method for non-volatile memory with managed execution of cached data
US7206230B2 (en) 2005-04-01 2007-04-17 Sandisk Corporation Use of data latches in cache operations of non-volatile memories
KR100764749B1 (ko) * 2006-10-03 2007-10-08 삼성전자주식회사 멀티-칩 패키지 플래시 메모리 장치 및 그것의 카피 백방법
KR20110119406A (ko) * 2010-04-27 2011-11-02 삼성전자주식회사 동작 모드 전환기능을 갖는 불휘발성 반도체 메모리 장치 및 동작 모드 전환방법
US9021182B2 (en) 2010-10-03 2015-04-28 Winbond Electronics Corporation Flash memory for code and data storage
US8472280B2 (en) 2010-12-21 2013-06-25 Sandisk Technologies Inc. Alternate page by page programming scheme

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
US5347487A (en) * 1991-05-31 1994-09-13 Texas Instruments Incorporated BICMOS latch/driver circuit, such as for a gate array memory cell
US5355335A (en) * 1991-06-25 1994-10-11 Fujitsu Limited Semiconductor memory device having a plurality of writing and reading ports for decreasing hardware amount
US5291584A (en) * 1991-07-23 1994-03-01 Nexcom Technology, Inc. Methods and apparatus for hard disk emulation
JP2667941B2 (ja) * 1992-09-17 1997-10-27 三菱電機株式会社 メモリセル回路
US5361229A (en) * 1993-04-08 1994-11-01 Xilinx, Inc. Precharging bitlines for robust reading of latch data

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