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WO1997030001A1 - Compositions de verre et de verre-ceramique; substrats de verre et de verre-ceramique - Google Patents

Compositions de verre et de verre-ceramique; substrats de verre et de verre-ceramique Download PDF

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Publication number
WO1997030001A1
WO1997030001A1 PCT/GB1997/000248 GB9700248W WO9730001A1 WO 1997030001 A1 WO1997030001 A1 WO 1997030001A1 GB 9700248 W GB9700248 W GB 9700248W WO 9730001 A1 WO9730001 A1 WO 9730001A1
Authority
WO
WIPO (PCT)
Prior art keywords
glass
component
substrate
oxide
oxides
Prior art date
Application number
PCT/GB1997/000248
Other languages
English (en)
Inventor
Jürgen Werner
Ralf Bergmann
John George Darrant
Original Assignee
Gec Alsthom Limited
MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gec Alsthom Limited, MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. filed Critical Gec Alsthom Limited
Publication of WO1997030001A1 publication Critical patent/WO1997030001A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Definitions

  • Glass and Glass-ceramic compositions Glass and Glass-ceramic substrates
  • This invention relates to glass compositions and glass-ceramic compositions and their use as substrates.
  • Glass and Glass-ceramics have been used for many years as electrical and electronic substrates.
  • the properties of these materials in these applications which make them attractive are their coefficients of thermal expansion and their thermal stability.
  • Alumino or Borosilicate glasses are currently used as substrates for silicon in devices such as solar cells and thin film transistors for displays, due to their matched thermal expansion and stability up to about 600 °C and relatively low cost.
  • the performance of such devices is limited by the maximum processing temperature at which the device can be produced, and this also affects the cost.
  • An increase in the refractoriness (i.e. thermal stability) of the substrate would enable higher temperature processing with concomitant device performance enhancement and/or cost reduction.
  • Silicon is currently used as a substrate for silicon in microelectronic applications, e.g. silicon on insulator (SOI).
  • SOI silicon on insulator
  • An object of the present invention is to provide a refractory glass or glass-ceramic composition able to withstand high temperature processing and capable of being used as a substrate, which gives improved performance at lower cost.
  • High temperature in this context refers to temperatures of 700°C and above.
  • Embodiments of the invention will be described which involve the selection of particular oxides which are mixed and heated to form a glass melt.
  • chemical precursors to glass e.g. sol-gel
  • the selected constituents and processing ensure a final substrate material which is either a glass or glass-ceramic with a coefficient of thermal expansion in the range 1-12 x lO ⁇ /K.
  • the material may be used as a substrate for silicon for thin film solar cells (manufactured e.g. by deposition techniques such as chemical vapour deposition, solution growth, ion beam or ion beam assisted deposition, molecular or cluster beam deposition or sputter deposition assisted techniques) and the technology of thin film transistors in displays.
  • the material may be used as a substrate or support for crystalline silicon in microelectronic or micromechanic applications, e.g. Silicon on Insulator (SOI) or bonding of silicon wafers.
  • SOI Silicon on Insulator
  • Fine adjustment of the thermal expansion coefficient of the glass or glass-ceramic allows also use for other semiconductor materials such as germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselinide, gallium nitride, etc, and other inorganic or semi-conducting materials as appropriate.
  • the invention provides a glass or glass-ceramic composition having thermal stability up to at least 700° C and comprising at least 50 wt% SiO 2 and at least 9 wt% Ai 3 .
  • the invention provides a component comprising a substrate having a material applied thereto either directly or with at least one intermediate layer between the substrate and the material, said substrate being formed of a glass or glass-ceramic composition having a thermal stability (as hereinafter defined) up to at least 700 ⁇ and having a coefficient of thermal expansion which is substantially the same (as hereinafter defined) as that of the material.
  • the invention provides a method of manufacturing a component comprising a substrate having a material applied thereto either directly or with at least one intermediate layer between the substrate and the material, said method comprising forming the substrate of a glass or glass-ceramic composition having a thermal stability (as hereinafter defined) up to at least 700 ( C and having a coefficient of thermal expansion which is substantially the same (as hereinafter defined) as that of said material.
  • Thermal stability in the context refers to the ability of the composition to withstand processing without a significant degree of change in its surface characterisation as manifested by surface crystallisation, and its bulk characteristics. 'Substantially the same' refers to the coefficients of thermal expansion being sufficiently close so that the material applied to the substrate rrj intains its physical integrity eg it will not crack or peel.
  • the substrate will have a similar coefficient of thermal expansion as that of the materials applied thereto eg silicon, germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselenide, gallium nitride, etc (i.e. in the range 1-12 x 10 " VK).
  • the substrate may be either transparent, translucent or opaque.
  • the substrate material is normally made from oxides or chemical precursors to glasses or glass- ceramics including at least a selection of: SiO 2 , Al 2 O 3 , As 2 O 3 , BaO, Cs 2 O, CaO, CeO 2 , MgO, P 2 O 5 , SrO, TiO 2 , ZnO, ZrO 2 and lanthanide oxides.
  • the substrate may be produced via a glass melting route eg wherein a selection of given oxides are mixed and heated to a form of glass melt or via chemical routes (e.g. sol-gel).
  • a glass melting route eg wherein a selection of given oxides are mixed and heated to a form of glass melt or via chemical routes (e.g. sol-gel).
  • the glass or glass-ceramic may be made from SiO 2 , Al 2 O 3 nucleating agents comprising one or more of P 2 O 5 , TiO 2 and ZrO 2 and other oxides including one or more of As 2 O 3 , BaO, CaO, Cs-O, CeO 2 , MgO, SrO, ZnO and lanthanide oxides.
  • such a material may comprise a glass or glass-ceramic made from silica 50.0 wt to 75.0 wt%; aluminium oxide 9.0 wt% to 40.0 wt%; arsenic oxide 0.1 wt% to 15.0 wt ; barium oxide 0.1 wt% to 45.0 wt%; calcium oxide 0.1 wt% to 25.0 wt%; caesium oxide 0.1 wt% to 45.0 wt ; cerium dioxide 0.1 wt% to 15.0 wt%; magnesium oxide 0.1 wt to 25.0 wt%; phosphorous pentoxide 0.1 wt% to 15.0 wt%; strontium oxide 0.1 wt% to 25.0 wt%; titanium dioxide 0.1 wt% to 15.0 wt%; zinc oxide 0.1 wt to 15.0 wt ; zirconium dioxide 0.1 wt% to 15.0 wt%, and lantiianide oxides
  • Glass and glass-ceramic compositions within the scope of the invention may optionally comprise other constituents such as firing agents, colourants or other additives, used in minor proportions to modify melting characteristics, appearance and/or other glass properties.
  • the substrate may be formed to be flat , concave or convex and may be structured eg formed with intersecting grooves, or dimples.
  • the substrate may be used directly or with a passivation layer coating (e.g. SiO 2 , Si. N y Al 2 O 3 or AIN) or a combination of suitable passivation layers; such passivation layer(s) may act for preventing the glass from crystallising and/or protecting the film from diffusion of impurities from the elass.
  • the substrate (with or without a passivation layer) may be coated with or bonded to a semiconducting film consisting of silicon, germanium, silicon-germanium, gallium arsenide, silicon carbide, diamond, copper-indium-diselenide, gallium nitride, or other inorganic/semi ⁇ conducting materials.
  • the semi-conducting material may be organic or inorganic.
  • the semiconductor film may be fabricated into solar cells, thin film transistors, silicon on insulator structures , micromechanical devices, light emitting diodes, semiconductor lasers or optoelectronic devices or other solid state devices or circuits.
  • the substrate may be used as a mechanical support for the handling or processing of crystalline silicon or other semiconductors.
  • glass composed of all or a part of the components SiO 2 , Al 2 O 3 , BaO, MgO, ZnO, ZrOj, Cs Q is melted and cast to yield blocks for subsequent machining to desired substrate shape.
  • Thin films of silicon or other semiconductors are deposited and /or subsequently treated in the temperature range of 700 - 1450 °C to yield solar cells, thin film transistors, micromechanical, optoelectronic or other solid state devices or circuits.
  • Table 1 give a series of ten glass compositions in accordance with the invention. The constituents are melted at 1650°C - 1800°C and annealed at e.g. 800°C for 1 h - 2 h. Subsequent treatment is as in Example 1.
  • Table 2 illustrates the results of thermal stability trials with some of the glass compositions as set out in Table 1 such compositions being identified as NK2/(4297, 4298, 4300-4303)
  • thermo stability' refers to the ability of the composition to withstand processing without any or without a significant degree of change in its surface characteristics as manifested by surface crystallisation, and its bulk characteristics.
  • Table 3 illustrates the thermal behaviour of the glasses designated 4297, 4298 4300-4303 in accordance with the invention, in comparison with known glasses. (Pyrex is a trade mark).
  • Table 3 Thermal expansion of polycrystalline silicon, fused quartz, Pyrex glass, Schott float glass and example glasses and glass-ceramics.
  • the accompanying Figure 1 illustrates the percentage linear change in dimensions of the glasses NK2/4300-4303 versus temperature in comparison with silicon.
  • a glass composition is prepared as per any one of the examples in Table 1 but in addition amo ⁇ hous silicon is deposited e.g. by low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition at temperatures below 600°C and subsequently crystallized by a furnace anneal at temperatures around 600 °C for periods of 2 to 48 h, by rapid thermal annealing at temperatures in the range of approx. 750 - 1300°C for fractions of seconds to several minutes or a combination of both or by laser annealing or zone melt crystallisation processes using a variety of heat sources.
  • Glass is prepared as per Example 1 or 2 above but in addition silicon is deposited at temperatures around 1000°C by chemical vapour deposition using a trichlorosilane process.
  • Example 5 As per Example 3 except that the polycrystalline Si layer created in Example 3 is further thickened by a silicon - liquid phase epitaxy process from various metal solutions (e.g. In, Sn Bi, Ga) at temperatures around 900°C, or a vapour phase epitaxy process from trichlorosilane at temperatures around lOOO'C.
  • various metal solutions e.g. In, Sn Bi, Ga
  • vapour phase epitaxy process from trichlorosilane at temperatures around lOOO'C.
  • Example 6 except that the silicon film is fabricated into a solar cell using standard microelectronic cleaning techniques (e.g. RCA cleaning sequence with or without HF etching or other standard cleaning procedures used in microelectronic device fabrication like cleaning solutions using organic cleaning ingredients), solid state or other means of dopant diffusion at temperatures around 850 °C and an optional thermal Si surface oxidation at temperatures around 1100 °C.
  • the RCA cleaning sequence consists of two cleaning steps: first a mixture of ammonia, hydrogen peroxide and water, heated to about 70-80°C and applied for approximately 10 - 15 min followed by a water rinse and a mixmre of hydrochloric acid, hydrogen peroxide and water, again at the same temperature and time.
  • a mixture of sulphuric acid and hydrogen peroxide is used.
  • sulphuric acid and hydrogen peroxide There are a lot of varieties like boiling in HCl or HNO 3 or dipping in HF or combinations.
  • organic cleaning solvents like 'Mucasol' (TM) may be utilised.
  • Example 7 except that the silicon film is fabricated into thin film transistor devices or circuits using standard cleaning techniques, solid state diffusion or other means of dopant incorporation (e.g. ion implantation) and other electronic device production sequences.
  • sheet glass is either drawn or cast from the melt.
  • the glass may be polished if necessary - this will not always be essential.
  • sheet glass is formed by the float method. 10.
  • the sheet glass is mechanically structured on either one or both faces.
  • Example 1 1 except that sheet glass is either drawn or cast from the melt.
  • Example 11 As Example 11 except that sheet glass is formed by the float method.
  • the glass is heat-treated in the range 600 - 1500°C to develop a polycrystalline microstructure (i.e. formation of a glass-ceramic).
  • any of examples 1 - 16 except that the glass or glass-ceramic is combined with a silicon superstrate for subsequent production of a silicon on insulator device or solar cell or micromechanical or optoelectronic devices or circuits.
  • the substrate is treated with a surface passivation layer (e.g. SiO ⁇ .
  • the glass or glass-ceramic is used as a mechanical support for the handling and processing of crystalline silicon.
  • a glass composed of SiO 2 , Al 2 O 3 , BaO and MgO is prepared from chemical precursors (e.g. sol-gel). Thin sheets are cast onto a suitable substrate and heat-treated at temperamres up to 1500°C. Silicon is deposited in the temperature range 700 - 1450°C to yield thin films for solar cells or other solid state devices such as thin film transistors or micromechanical devices.
  • any of examples 21 - 23 except thin film transistors, solar cells, micromechanical devices or other solid state devices are fabricated on the substrate.
  • a surface passivation layer e.g. SiO 2 , Si x N y , AIN, Al j O j ).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Dispersion Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)

Abstract

Une composition de verre ou de verre-céramique est thermiquement stable au moins jusqu'à 700 °C. Cette composition est utilisée pour former un substrat pour un matériau minéral ou un matériau semi-conducteur, comme par exemple le silicium et son coefficient de dilatation thermique est sensiblement le même que celui dudit matériau.
PCT/GB1997/000248 1996-02-14 1997-01-29 Compositions de verre et de verre-ceramique; substrats de verre et de verre-ceramique WO1997030001A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9603028A GB2310314A (en) 1996-02-14 1996-02-14 Glass or glass ceramic substrates
GB9603028.3 1996-02-14

Publications (1)

Publication Number Publication Date
WO1997030001A1 true WO1997030001A1 (fr) 1997-08-21

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WO (1) WO1997030001A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19916296C1 (de) * 1999-04-12 2001-01-18 Schott Glas Alkalifreies Aluminoborosilicatglas und dessen Verwendung
DE19934072A1 (de) * 1999-07-23 2001-01-25 Schott Glas Alkalifreies Aluminoborosilicatglas, seine Verwendungen und Verfahren zu seiner Herstellung
DE19942259C1 (de) * 1999-09-04 2001-05-17 Schott Glas Erdalkalialuminoborosilicatglas und dessen Verwendungen
US7867932B2 (en) 2007-08-28 2011-01-11 Corning Incorporated Refractory glass ceramics
US9640621B2 (en) 2012-06-29 2017-05-02 Corning Incorporated Glass-ceramic substrates for semiconductor processing

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1855324A1 (fr) * 2006-05-12 2007-11-14 Applied Materials GmbH & Co. KG Substrate de type vitroceramique

Citations (5)

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Publication number Priority date Publication date Assignee Title
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
US4464475A (en) * 1983-01-13 1984-08-07 Corning Glass Works Glass-ceramic articles containing osumilite
US4634683A (en) * 1985-10-23 1987-01-06 Corning Glass Works Barium and/or strontium aluminosilicate crystal-containing glasses for flat panel display devices
US4634684A (en) * 1985-10-23 1987-01-06 Corning Glass Works Strontium aluminosilicate glass substrates for flat panel display devices
US4714687A (en) * 1986-10-27 1987-12-22 Corning Glass Works Glass-ceramics suitable for dielectric substrates

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GB2172282B (en) * 1985-03-11 1988-10-05 English Electric Co Ltd Toughened glass-ceramics
JPS63107095A (ja) * 1986-10-23 1988-05-12 富士通株式会社 多層セラミツク回路基板
DE3935471A1 (de) * 1989-10-25 1991-05-02 Hoechst Ag Keramische stoffzusammensetzung und ihre verwendung
JPH05116985A (ja) * 1991-05-22 1993-05-14 Ngk Spark Plug Co Ltd セラミツク基板
JPH05254923A (ja) * 1992-03-10 1993-10-05 Hitachi Ltd セラミック組成物及びセラミック回路基板

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Publication number Priority date Publication date Assignee Title
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
US4464475A (en) * 1983-01-13 1984-08-07 Corning Glass Works Glass-ceramic articles containing osumilite
US4634683A (en) * 1985-10-23 1987-01-06 Corning Glass Works Barium and/or strontium aluminosilicate crystal-containing glasses for flat panel display devices
US4634684A (en) * 1985-10-23 1987-01-06 Corning Glass Works Strontium aluminosilicate glass substrates for flat panel display devices
US4714687A (en) * 1986-10-27 1987-12-22 Corning Glass Works Glass-ceramics suitable for dielectric substrates

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LAPP J C ET AL: "ADVANCED GLASS SUBSTRATES FOR FLAT PANEL DISPLAYS", PROCEEDINGS OF THE SPIE, vol. 2174, 1994, pages 129 - 138, XP000607666 *
SPANGLER L J ET AL: "A BULK SILICON SOI PROCESS FOR ACTIVE INTEGRATED SENSORS", SENSORS AND ACTUATORS A, vol. A24, no. 2, 1 July 1990 (1990-07-01), pages 117 - 122, XP000148921 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19916296C1 (de) * 1999-04-12 2001-01-18 Schott Glas Alkalifreies Aluminoborosilicatglas und dessen Verwendung
DE19934072A1 (de) * 1999-07-23 2001-01-25 Schott Glas Alkalifreies Aluminoborosilicatglas, seine Verwendungen und Verfahren zu seiner Herstellung
DE19934072C2 (de) * 1999-07-23 2001-06-13 Schott Glas Alkalifreies Aluminoborosilicatglas, seine Verwendungen und Verfahren zu seiner Herstellung
DE19942259C1 (de) * 1999-09-04 2001-05-17 Schott Glas Erdalkalialuminoborosilicatglas und dessen Verwendungen
US7867932B2 (en) 2007-08-28 2011-01-11 Corning Incorporated Refractory glass ceramics
US9640621B2 (en) 2012-06-29 2017-05-02 Corning Incorporated Glass-ceramic substrates for semiconductor processing

Also Published As

Publication number Publication date
GB2310314A (en) 1997-08-20
GB9603028D0 (en) 1996-04-10

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