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WO1997019572A1 - Procede de fabrication d'un dispositif comportant un substrat a la surface duquel est dispose un capteur capacitif - Google Patents

Procede de fabrication d'un dispositif comportant un substrat a la surface duquel est dispose un capteur capacitif Download PDF

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Publication number
WO1997019572A1
WO1997019572A1 PCT/NL1996/000462 NL9600462W WO9719572A1 WO 1997019572 A1 WO1997019572 A1 WO 1997019572A1 NL 9600462 W NL9600462 W NL 9600462W WO 9719572 A1 WO9719572 A1 WO 9719572A1
Authority
WO
WIPO (PCT)
Prior art keywords
membrane
substrate
layer
electrode
polyimide material
Prior art date
Application number
PCT/NL1996/000462
Other languages
English (en)
Inventor
Michael Pedersen
Piet Bergveld
Original Assignee
Stichting Voor De Technische Wetenschappen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to AU75908/96A priority Critical patent/AU7590896A/en
Application filed by Stichting Voor De Technische Wetenschappen filed Critical Stichting Voor De Technische Wetenschappen
Publication of WO1997019572A1 publication Critical patent/WO1997019572A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials

Definitions

  • Method for the production of a svstem comprising a substrate and a capacitive sensor which is arranged on the substrate.
  • the present invention relates to a method for the production of a system comprising a substrate and a capacitive sensor which is arranged on the substrate and is provided with at least one movable membrane, which comprises polymer material, and at least two mutually separate electrodes, at least one of the electrodes being connected to the at least one membrane.
  • the advantage of the integration of the sensor in the substrate is the resultant short signal path between the electrodes of the sen ⁇ sor and the electrical circuits integrated in the substrate. Said integration is particularly advantageous in the case of capacitive sensors, with which the electrical signal is a measure of the change in capacitance between the electrodes, which in general is very small.
  • the capacitive sensor has a high output impedance, as a result of which the electrical load of the parasitics in the electri ⁇ cal connection between the capacitive sensor and the integrated elec ⁇ trical circuits on the substrate is highly critical. A short signal path reduces said electrical load.
  • CMOS complementary metal-oxide-semiconductor
  • IC processes of this type comprise one or more high temperature steps ⁇ T > 1000 °C) .
  • the sensor material must be able to withstand these high temperatures in order to be able to arrange the sensor on the substrate before integration of the electrical circuits.
  • Different problems again play a role in the case of integration of the manufac ⁇ turing process for the sensor in the IC process.
  • the majority of layers which are used in an IC process are not suitable as a component of mechanical sensors, in particular with regard to me ⁇ chanical stress and material parameters.
  • the sensor must be arranged on the substrate after the integrated electrical circuits have been com ⁇ pleted thereon, in order to obtain an optimum result.
  • the use of polymer material in the membrane makes it possible to apply the sensor on the substrate without damage being caused to elec ⁇ trical circuits previously arranged thereon.
  • a method of the type mentioned initially is known from US Patent No. 5208789.
  • a metallized diaphragm consisting of a polyester film which is gold-metallized, is tensioned for bonding to the substrate by means of an adhesive.
  • further processing steps are necessary, e.g. to locally remove part of the membrane in order to make an elec ⁇ trical connection to the electronics on the substrate.
  • additional processing steps are time consuming and heighten the production costs.
  • the aim of the present invention is to provide a method of the type described initially with which the sensor can be arranged on the substrate, which may or may not have been provided with integrated circuits, with the aid of a "post-processing" treatment step without having the disadvantages of the method known in the art.
  • the method according to the present invention is characterized in that it comprises the following steps:
  • the method according to the invention can be performed with a higher degree of accuracy, among others because micromachining technology can be used, thereby allowing for better product tolerances and/or smaller structural dimensions.
  • the method according to the invention is furthermore extremely sui ⁇ table for the production of large volumes, among others since the membrane can be formed such that connection points are locally avai ⁇ lable for electrical connection to the electronics on the substrate. Additionally it must be noted that in the known method a silicon dioxide layer is applied to the substrate which will be charged and used as an electret to improve the properties of the sensor, which is necessary because of the relatively large air gaps present therein.
  • the polymer material is photosensitive polyimide.
  • Photosensitive polyimide offers the advantage that it can simply be patterned on to the substrate. The treatment step involving arrange- ment of the sensor on the substrate is appreciably less complex as a result.
  • Figure 1 shows a side cross-sectional view of a first preferred embodiment of a sensor made by means of the method according to the present invention
  • Figure 2 shows a side cross-sectional view of a second preferred embodiment of a sensor made by means of the method according to the present invention
  • Figure 3 shows a side cross-sectional view of a third preferred embodiment of a sensor made by means of the method according to the present invention.
  • Figures 4 to 6 show a number of steps which form part of a pre ⁇ ferred embodiment of the method according to the present invention.
  • corresponding parts are designated by correspon ⁇ ding reference numerals.
  • FIG. 1 shows a first preferred embodiment of a capacitive sen ⁇ sor 1 made by means of the method according to the present invention.
  • sensor 1 comprises two membranes 5 and 8 made of polymer material.
  • Membranes 5 and 8 are placed on a substrate 2 made of, for example, semiconductor material.
  • Substrate 2 is provided with an insulating layer 3 t for example silicon oxynitri- de.
  • Substrate 2 can further comprise electronic circuits (not shown).
  • Membranes 5 and 8 are separated from one another by a gap 6.
  • An elec- trode 4 and 7. respectively, is fixed beneath each of the membranes. Said fixing is such that at least one electrode is connected to each membrane.
  • Electrodes 4 and 7 can also be fixed on top of the respective mem ⁇ branes 5 and 8. Electrodes 4 and 7 preferably comprise a metal sand- wich, such as chromium-gold-chromium.
  • the sensor electrodes can be connected in a known manner to electrical circuits (not shown) inte ⁇ grated in the substrate. Said connection can be made either during or after arrangement of the sensor on the substrate.
  • the connection can, for example, be produced with the aid of 'bonding' techniques, such as welding of one or more connection wires at one end to one or more electrodes of the sensors and at the other end to the contact layers, present on the substrate, providing contact with the integrated cir- cults.
  • the capacitive sensor 1 functions as follows. When the sensor is in use, a voltage is applied between electrodes 4 and 7. which, on the basis of their mutual positioning, form a capacitor. Each mechanical movement of the membranes 5 and 8 can now be measured as a change in the capacitance between the two electrodes k and 7> It will be clear that such a change in capacitance can be measured in accordance with various, generally known methods. Each external force which causes a movement of the membranes 5 and 8 can thus be measured with the aid of sensor 1. In the embodiment shown, which is provided with two mem- branes, the sensor according to the present invention is outstandingly suitable for use as a microphone. In this case the relatively thinner membrane 5 will vibrate more than the relatively thicker membrane 8.
  • FIG 2 shows a second preferred embodiment of a capacitive sensor.
  • the opening 12 in substrate 2 is smaller than that in the first embodiment. Consequently, the membrane 5 cannot be made to vibrate and only membrane 8 vibrates when the sensor is in use. Membrane 5 can therefore be replaced by an insula ⁇ ting layer of a suitable material, which does not have to comprise a polymer material.
  • Figure 3 shows a third embodiment of a sensor according to the invention. Substrate 2 of sensor 30 now forms a whole without any opening. In use, only membrane 8 will vibrate. Membrane 5 can thus be replaced by an insulating layer, as has been described above with reference to Figure 2.
  • Sensors 20 and 30 are outstandingly suitable as tactile or touch sensors and as acceleration sensors. Sensor 20 is, furthermore, also suitable as a pressure sensor.
  • the upper and/or the lower membrane of the sensor is preferably provided with holes 9-
  • the sensor acquires a better response at different fre ⁇ quencies as a result.
  • the holes 9 help to increase the sensitivity of the sensor because they lead to a reduced rigidity of the membrane in which they have been made.
  • a system which has been produced in accordance with this method comprises an insulating layer, as described above with reference to Figures 2 and 3. instead of the first membrane 5.
  • the method according to the invention comprises the following steps:
  • the first electrode 4 cannot be arranged directly on the substrate because of the risk of short-circuiting.
  • an insulating layer 3 must first be arranged on the substrate.
  • an insulating layer is present as standard in the case of a substrate provided with integrated circuits. A preferred embodiment of the method according to the invention will be explained in more detail with reference to Figures 4 to 6.
  • Figure 4 shows a possible first step in the method for arranging sensor 1 on substrate 2.
  • Substrate 2 can already have been provided with electronic circuits (not shown) .
  • Substrate 2 has an insulating layer 3-
  • etching mask 11 which is known per se, substrate 2 is etched in the region where the sensor 1 is to be arranged. Etching can be carried out in a known manner and is preferably carried out with the aid of a chemical solution which contains potassium hydroxide (KOH) .
  • KOH potassium hydroxide
  • the thickness of the substrate 2 is reduced in the sensor region from approximately 400 ⁇ m at 2 to approximately 50 ⁇ m at 2a.
  • the substrate retains sufficient stability for the subsequent treatment.
  • the procedural step described above can also be carried out as an intermediate step or as one of the final procedural steps.
  • Figure 5 shows a further step in the method according to the present invention.
  • a first electrode 4 preferably made of metal
  • a "lift-off" process with the aid of a photosensitive resist layer is preferably used for this purpose, instead of an etching process. Etching of the metal layer is avoided as a result.
  • resistive vapour deposition can be used for the deposition of electrode 4.
  • a layer of polymer material is then applied to elec ⁇ trode 4 and patterned in the form of a membrane.
  • the membrane can be produced from any suitable polymer, preferably thermoplastic material, which can be processed in a manner known per se to produce a membrane.
  • thermoplastic polymer material which has a softening temperature (T s ) higher than the envisaged use tempera ⁇ ture, preferably 100 °C higher than the use temperature.
  • T s softening temperature
  • the use temperature is generally room temperature
  • T s is preferably > 115 °C.
  • T c curing temperature
  • T c must be sufficiently low to prevent any electrical circuits present on the substrate from melting or being otherwise adversely affected by the application of the sensor.
  • a suitable limiting value temperature for T c is therefore the lowest value of the melting temperatures of the materials from which the electronic circuits are made.
  • T c is preferably ⁇ 660 °C: the melting temperature of aluminium. More preferentially, 0 °C ⁇ T c ⁇ T c ' , where T c ' is the lowest value of the softening tem ⁇ peratures of the materials used in the integrated circuits.
  • the membrane can be produced and bonded to the substrate/arranged on the substrate in any suitable manner.
  • the membrane is formed in situ on the substrate by coating the substrate with a solution of the polymer material or a precursor thereof in a suitable solvent and then forming the membrane in a suitable manner by removing the solvent, for example by cross-linking, and/or forming the polymer material, for example by a chemical method by curing or a polymerisation reaction, optionally with the formation of cross-link- ages.
  • the depo ⁇ sition of a layer of polyimide material comprises the following steps: (1) the application of a solution of the polyimide material in a suitable solvent on a substrate with the aid of a spinning move ⁇ ment;
  • step 1 the polyimide material is applied in dissolved form, the solvent used preferably being N-methylpyrrolidone (NMP), to the substrate with the aid of a spinning movement.
  • NMP N-methylpyrrolidone
  • the polyimide solution is applied to the substrate while the substrate is rotated, preferably at about 4000 revolutions per minute for about 2 min. This gives rise to a uniform layer of polyimide material over the substrate.
  • step 2 the polyimide material is then heated to 80-100 °C, preferably 90 °C, for 20 to 30 minutes, preferably 2 minutes.
  • step 3 a photosensitive resist layer is then applied over the polyimide layer with the aid of a spinning movement, using a procedure analogous to that described in step 1.
  • the photosensitive resist layer used is preferably the Sl ⁇ XX series from Shipley.
  • step 4 the system is then heated for 10-20 minutes, preferably 1 minutes, to 80-100 "C, pre ⁇ ferably 90 °C.
  • the photosensitive resist layer is then at least par- tially exposed to light in a controlled manner, preferably with the aid of a photolithographic mask.
  • the photosensitive resist layer is then developed.
  • the developers used are preferably MF3 1 or MF312 from Shipley. It can be pointed out that the polyimide material also dis ⁇ solves in this developer, as a result of which the polyimide layer assumes approximately the same pattern as the photosensitive resist layer.
  • the photosensitive resist layer is then removed, preferably using acetone. As the polyimide material does not dissolve in acetone, the pattern thereof remains intact.
  • the deposition of a layer of photosensitive polyimide material comprises the following steps:
  • photosensitive polyimide material is used, pre ⁇ ferably HTR3-200* from OCG Microelectronics.
  • This is a solution which contains photosensitive polyimide material of the PMDA/ODA system and the solvent NMP.
  • PMDA/ODA pyromellitic acid dianhydride/oxydianili- ne
  • steps 1 and 2 which have been described above in relation to 'standard' poly ⁇ imide material.
  • step 3 the polyimide material is then first of all exposed to light.
  • the techniques used for this purpose can be the same as those used in the case of the photosensitive resist layer in example A.
  • the polyimide material is then heated to 80 C - 100 C, preferably 90 °C, for 8 - 12 minutes, preferably 10 minutes. This step is carried out to increase the polymerisation in the parts of the polyimide layer exposed to light.
  • the polyimide material is then deve- loped.
  • the developer used is preferably HTRD-2* from OCG Microelectro ⁇ nics.
  • the parts of the polyimide material exposed to light are now rendered insoluble.
  • Step 4 finally, comprises baking the polyimide layer. This latter step is analogous to curing step 6 in example A.
  • auxiliary layer 10 is then deposited on the polymer layer 5.
  • Auxiliary layer 10 preferably consists of aluminium.
  • the aluminium auxiliary layer can be applied with the aid of the known DC magnetron sputtering technique. This known technique is usually also used for the deposition of aluminium interconnection layers in CMOS techniques and is therefore directly compatible.
  • Other materials, such as photosensitive resist, are also suitable in this context. In general, all materials which are removable without damage to the sensor or components thereof can be used for auxiliary layer 10.
  • FIG. 6 shows yet further steps in the method according to the invention.
  • a second electrode 7 has been deposited, partially on auxiliary layer 10 and partially on mem ⁇ brane 5-
  • a second layer of polymer material 8 is then applied, analogously to layer t in the form of a membrane on the second elec ⁇ trode 7.
  • the end product of the method according to the invention can finally be obtained (see Figure 1).
  • an opening 12 has been made in substrate 2, which opening is sufficiently large to render membrane 5 movable.
  • Said further etching step can be carried out in a known manner, for example with the aid of reactive ion etching techniques, it being possible to use electrode 4 as etching stop.
  • auxiliary layer 10 has been removed, as a result of which a gap 6 has been produced, such that the membranes 5 and 8 are able to move freely.
  • the removal of auxiliary layer 10 can be effected with the aid of known etching techniques. It will be clear that only etching tech ⁇ niques which do not attack the sensor and, in particular, the polymer material can be used for this purpose.
  • etching solutions such as a solution of H 3 PO 4 in water, can safely be used.
  • At least one hole 9 s made in the second membrane 8 or in, respectively, the insulating layer or the first membrane for the purposes of removal of the auxiliary layer, which hole is such that an opening from the outside to the auxiliary layer 10 is pro ⁇ can be made, as shown in Figures 1 to 3- When the system is in use, said further holes facilitate the outflow of air from gap 6 and consequently improve the functioning of the sensor according to the invention.
  • Holes 9 can be made in a known manner, for example in the patterning step of the method described.
  • the two electrodes 4 and 7 can, if desired, consist of several electrodes in order, in this way, to refine the sensitivity of the capacitance measurement.
  • Several capacitance values can be measured with a sensor of this type. This has the advantage that signal dis ⁇ turbances can be eliminated.
  • a pressure sensor it is possible, for example, to eliminate signal disturbances caused by drift phenomena in this way.
  • insulating layer/membrane 5 prefe ⁇ rably has a thickness of ⁇ 1 um, whilst membrane 8 preferably has a thickness of 1 to 20 ⁇ m. More generally, the criterion for the thick ⁇ ness of the two layers 5 and 8 is preferably that said thickness is between 0.1 and 100 ⁇ m.
  • Gap 6 preferably has a depth of 2 ⁇ m.
  • the smallest horizontal dimension of opening 12 parallel to electrode 4 is preferably 2 mm.
  • the invention is, for example, not restricted to the use of polymer material, but also comprises the use of materials of comparable mechanical and electrical properties.
  • the present invention is, moreover, not restricted to the embodiments described and illustrated but comprises any embodiment which is con ⁇ sistent with the above description and the associated drawings and which falls within the scope of the appended claims.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)

Abstract

La présente invention se rapporte à un procédé de fabrication d'un dispositif comportant un substrat à la surface duquel est disposé un capteur capacitif qui est doté d'au moins une membrane mobile comportant une matière polymère et d'au moins deux électrodes distinctes l'une de l'autre, une de ces électrodes au moins étant reliée à la ou les membranes. Le procédé de l'invention se caractérise en ce qu'il consiste à (i) former la membrane in situ sur le substrat en déposant sur celui-ci une solution contenant la matière polymère ou un précurseur de ce polymère dans un solvant adapté, et (ii) à former ladite membrane de façon appropriée en éliminant sensiblement le solvant.
PCT/NL1996/000462 1995-11-23 1996-11-21 Procede de fabrication d'un dispositif comportant un substrat a la surface duquel est dispose un capteur capacitif WO1997019572A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU75908/96A AU7590896A (en) 1995-11-23 1996-11-20 Method for the production of a system comprising a substrate and a capacitive sensor which is arranged on the substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1001733A NL1001733C2 (nl) 1995-11-23 1995-11-23 Stelsel van een substraat en een opnemer.
NL1001733 1995-11-23

Publications (1)

Publication Number Publication Date
WO1997019572A1 true WO1997019572A1 (fr) 1997-05-29

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PCT/NL1996/000462 WO1997019572A1 (fr) 1995-11-23 1996-11-21 Procede de fabrication d'un dispositif comportant un substrat a la surface duquel est dispose un capteur capacitif

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AU (1) AU7590896A (fr)
NL (1) NL1001733C2 (fr)
WO (1) WO1997019572A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000027166A3 (fr) * 1998-11-02 2000-10-26 Sarnoff Corp Conception de transducteurs pour protheses auditives et autres dispositifs
WO2007081504A1 (fr) * 2006-01-09 2007-07-19 Analog Devices, Inc. Microphone integre
EP1635608A4 (fr) * 2003-05-27 2010-01-13 Hosiden Corp Mecanisme de detection sonore

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208789A (en) * 1992-04-13 1993-05-04 Lectret S. A. Condenser microphones based on silicon with humidity resistant surface treatment
EP0561566A2 (fr) * 1992-03-18 1993-09-22 Knowles Electronics, Inc. Microphone à condensateur à l'état solide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0561566A2 (fr) * 1992-03-18 1993-09-22 Knowles Electronics, Inc. Microphone à condensateur à l'état solide
US5208789A (en) * 1992-04-13 1993-05-04 Lectret S. A. Condenser microphones based on silicon with humidity resistant surface treatment

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SCHEEPER P R ET AL: "Improvement of the performance of microphones with a silicon nitride diaphragm and backplate", SENSORS AND ACTUATORS A, vol. 40, no. 3, March 1994 (1994-03-01), LAUSANNE, CH, pages 179 - 186, XP000446072 *
SCHEEPER P R ET AL: "PECVD SILICON NITRIDE DIAPHRAGMS FOR CONDENSER MICROPHONES", SENSORS AND ACTUATORS B, vol. B4, no. 1 / 02, May 1991 (1991-05-01), pages 79 - 84, XP000202676 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000027166A3 (fr) * 1998-11-02 2000-10-26 Sarnoff Corp Conception de transducteurs pour protheses auditives et autres dispositifs
EP1635608A4 (fr) * 2003-05-27 2010-01-13 Hosiden Corp Mecanisme de detection sonore
US7795695B2 (en) 2005-01-27 2010-09-14 Analog Devices, Inc. Integrated microphone
WO2007081504A1 (fr) * 2006-01-09 2007-07-19 Analog Devices, Inc. Microphone integre

Also Published As

Publication number Publication date
AU7590896A (en) 1997-06-11
NL1001733C2 (nl) 1997-05-27

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