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WO1997017761A1 - Structure de circuit - Google Patents

Structure de circuit Download PDF

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Publication number
WO1997017761A1
WO1997017761A1 PCT/IB1996/001182 IB9601182W WO9717761A1 WO 1997017761 A1 WO1997017761 A1 WO 1997017761A1 IB 9601182 W IB9601182 W IB 9601182W WO 9717761 A1 WO9717761 A1 WO 9717761A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
transistor
bus
switch
circuit arrangement
Prior art date
Application number
PCT/IB1996/001182
Other languages
English (en)
Inventor
Stephen L. Wong
Original Assignee
Philips Electronics N.V.
Philips Norden Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics N.V., Philips Norden Ab filed Critical Philips Electronics N.V.
Priority to PCT/IB1996/001182 priority Critical patent/WO1997017761A1/fr
Priority to DE69633006T priority patent/DE69633006T2/de
Priority to JP9518017A priority patent/JPH11502391A/ja
Priority to EP96935217A priority patent/EP0823147B1/fr
Publication of WO1997017761A1 publication Critical patent/WO1997017761A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
    • H05B41/14—Circuit arrangements
    • H05B41/26—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC
    • H05B41/28—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters
    • H05B41/282—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters with semiconductor devices
    • H05B41/2825—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters with semiconductor devices by means of a bridge converter in the final stage
    • H05B41/2828—Circuit arrangements in which the lamp is fed by power derived from DC by means of a converter, e.g. by high-voltage DC using static converters with semiconductor devices by means of a bridge converter in the final stage using control circuits for the switching elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/133—Modifications for switching at zero crossing in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration

Definitions

  • This invention relates to a circuit arrangement bridging together a first bus at a first voltage and a second bus at a second voltage, comprising: a first switch connected to the first bus; a second switch connected to the second bus, the first switch and second switch being serially connected together between the first bus and the second bus; and control means for controlling the conductive state of the first switch.
  • Such a circuit arrangement is generally called a bridge circuit or a bridge and is known from for instance EP 0323676 Al.
  • Bridges including half bridge and full bridge topologies, are typically used within circuitry for motor control and power supplies for ballasting of a lamp.
  • at least one pair of transistors (the switches) are serially connected between the B+ and ground (reference) buses.
  • the pair of transistors appear to be connected one on top of the other in a totem pole configuration.
  • the transistor connected to the B-l- bus is commonly referred to as the top transistor and the transistor connected to the ground bus is commonly referred to as the bottom transistor of the totem pole.
  • the junction joining the transistors together is commonly referred to as a floating ground since it floats between the B+ and ground buses depending on the conductive state of each transistor.
  • the transistors are often power metal oxide semiconductor field effect transistors (MOSFETs). Each transistor is turned on only when a low or zero voltage condition exists across the transistor. When turning on the top transistor with the bottom transistor already turned off, a voltage is applied to a gate of the MOSFET relative to the floating ground. Under these conditions, the voltage of the floating ground is at about the B+ bus potential. The voltage applied to the gate therefore must be raised relative to the potential of the B-l- bus in order to turn on the top transistor and is typically accomplished through use of a level shifter. The level shifter also minimizes the period of time during transition when both transistors are turned off (commonly referred to as deadtime) to prevent any possible conduction from the B+ bus to the ground bus.
  • deadtime the period of time during transition when both transistors are turned off
  • a typical level shifter such as part no. IR2110 from International Rectifier Corporation of El Segundo, CA., controls the conductive state of the top transistor through the generation of timed current pulses supplied to circuitry for driving the top transistor (i.e. high side switch control circuitry). The generation of these timed current pulses is based on the conductive state of the bottom transistor. At frequencies above about 100 kilohertz (e.g. for bridges within induction lamp ballasts operating at frequencies up to several megahertz), losses associated with these current pulses are relatively high and result in large heat losses. High frequency operation for such bridges is therefore impractical. There is also a growing trend toward minimizing the amount of space required for any and all circuitry required to drive the transistors. Reduction in the area taken up by conventional circuity required for level shifting would be extremely advantageously.
  • the invention aims at providing a circuit arrangement wherein the losses associated with controlling the conductive state of the top switch within totem pole configu- ration is strongly reduced and the control means are relatively small.
  • a circuit arrangement as described in the opening paragraph is therefore characterized in that the control means comprises a voltage sensor for generating a feedback signal that is a measure for the voltage difference across the first switch.
  • the circuit arrangement determines when the first switch will be turned on. There is no need for level shifting circuitry directed to turning on the first switch.
  • level shifting circuitry directed to turning on the first switch.
  • a top transistor in a totem pole configuration serves as the first switch, losses associated with level shifting in turning on the top transistor are reduced.
  • the area taken up by the level shifting circuitry also can be reduced.
  • the voltage sensor included in the control circuitry preferably produces a feedback signal derived from a difference between a varying voltage and a substantially fixed voltage.
  • the control circuitry can further include logic circuitry responsive to the feedback signal for controlling turn on of the first transistor and latch circuitry for storing the comparative state represented by the feedback signal.
  • Delay circuitry can also be included within the control circuitry for delaying storing of the comparative state represented by the feedback signal thereby delaying turn on of the first switch.
  • the varying voltage is based on a voltage at a junction joining the first transistor to the second transistor.
  • the junction voltage serves as the varying voltage.
  • the control circuitry further includes a voltage source having a substantially constant voltage wherein the varying voltage is based on both the substantially constant voltage and the junction voltage.
  • the varying voltage can be equal to the sum of the substantially constant voltage and the junction voltage.
  • FIG. 1 is a block diagram of a bridge circuit in accordance with a first embodiment of the invention
  • FIG. 2 is a block diagram illustrating in greater detail the logic circuit of FIG. l;
  • FIG. 3 is a block diagram of a bridge circuit in accordance with an alternative embodiment of the invention.
  • FIG. 4 is a schematic of a voltage sensor in accordance with the alternative embodiment of FIG. 3;
  • FIG. 5 is a schematic of a suitable voltage supply in accordance with the altemative embodiment of FIG 3; and FIGS. 6A, 6B and 6C are waveforms in timed relation to one another illustrating the gate inputs to the power transistors and the output from the bridge circuits of FIGS. 1 and 3.
  • a D.C. power source 10 is connected to a bridge circuit 20 for powering a load such as a lamp load 30.
  • Power source 10 typically includes an electromagnetic interference (EMI) filter (not shown) for removing EMI from entering an A.C. power line, a rectifier (not shown) for rectifying the A.C. signal and a preconditioner (not shown) for establishing a substantially constant D.C. voltage applied to bridge circuit 20.
  • EMI electromagnetic interference
  • a suitable D.C. source can include, but is not limited to the EMI filter, rectifier and preconditioner disclosed in U.S. Patent No. 5, 187,414.
  • Bridge circuit 20 includes two serially connected transistors Ql and Q2 of the MOSFET power type bridging a rail (bus) 100 at a B-l- potential (voltage) to a reference bus 110 typically at ground potential.
  • transistors Ql and Q2 also can be of the bipolar type or substituted for another type of switching device provided the switching devices can be controlled so as to provide an altemating current at a desired frequency flowing through lamp load 30.
  • An inductor 125 and a capacitor 128 are serially connected together between junction 120 and a junction 131.
  • Lamp load 30 is connected across capacitor 128.
  • a pair of capacitors Cl and C2 are serially connected between rail 100 and bus 110.
  • Capacitors Cl and C2 are joined together at junction 131.
  • Junctions 120 and 131 together serve as the output for bridge circuit 20.
  • Inductor 125 and capacitor 128 form a resonant circuit.
  • the switching frequency of transistors Ql and Q2 can be varied or set to a fixed frequency based, in part, on the resonant frequency of the resonant circuit for starting and steady state operation of lamp load 30.
  • Transistors Ql and Q2 are never on at the same time.
  • the voltage at junction 120 floats between a voltage level equal to about a diode drop above the voltage of rail 100 and about a diode drop below the voltage of bus 110 and is based on both the conductive states of transistors Ql and Q2 and the elapsed time since each transistor has been turned on.
  • Timing circuit 135 and a driver 138 in combination control when transistor Q2 is turned on and off.
  • Timing circuit 135 generates timing signals supplied to driver 138.
  • Driver 138 in response to the timing signals, produces a driving signal supplied to gate G of transistor Q2 for tu ing on and off the latter.
  • the driving signal shown in FIG. 6B, is discussed in greater detail below.
  • Transistor Ql is turned on based on the sensed voltage difference between the substantially fixed voltage of rail 100 and the varying voltage of junction 120. This voltage difference is detected by a voltage sensor 141.
  • Voltage sensor 141 e.g. a comparator
  • the voltage difference i.e. voltage drop
  • a feedback signal is produced at output 166 and supplied to a logic circuit 144 whenever the voltage difference is at or below the predetermined level.
  • the feedback signal produced at output 166 by voltage sensor 141 represents a comparative state between a varying voltage and a substantially fixed voltage.
  • the voltage difference across transistor Ql is at or less than a predetermined level.
  • the voltage difference across transistor Ql is above this predetermined level.
  • Logic circuit 144 in response to the logic level produced at output 166 of voltage sensor 141, stores the comparative state represented by the feedback signal.
  • logic circuit 144 can include an optional delay circuit 179 for delaying the tuming on of transistor Ql to lengthen the associated deadtime identified in FIG. 6C as D.T. 1.
  • Delay circuit 179 can be formed with resistor-capacitor (RC) circuitry or other well known delay devices.
  • the comparative state can be stored by a latch 182, the output of delay circuit 179 being supplied to a set S input of latch 182.
  • a driving signal produced by driver 176 is supplied to gate G of transistor Ql for tu ing on the latter.
  • the driving signal for gate G of transistor Ql, shown in FIG.6A, is discussed in greater detail below.
  • a voltage supply 188 serves as a D.C. source for powering voltage sensor 141, logic circuit 144 and driver 176.
  • Interface circuit 185 in response to a timing signal generated by timing circuit 135, generates a reset signal supplied to a reset R input of latch 182 for resetting the latter.
  • Interface circuit 185 which is a low-to-high voltage interface, can include a level shifter such as produced by International Rectifier Co ⁇ oration of El Segundo, California as part no. IR 2110.
  • the timing signals supplied to interface circuit 185 by timing circuit 135 are generated only for controlling tum off of transistor Ql and are produced before transistor Q2 is allowed to turn on.
  • the timing signals supplied to driver 138 by timing circuit 135 are generated for controlling turn on and turn off of transistor Q2.
  • an additional timing circuit (not shown) can be provided for generating the reset signal.
  • a floating well designates a portion of an integrated circuit which is electrically floating with respect to other portions of the same integrated circuit whereby logic circuit 144, driver 176 and voltage supply 188 can float or vary with respect to D.C. source 10 in a manner well known to those of ordinary skill in this art.
  • FIGS. 3, 4 and 5 illustrate an altemative embodiment of the invention in which D.C. power source 10 is connected to a bridge circuit 25 for powering lamp load 30.
  • Bridge circuit 25 is substantially the same as bridge circuit 20 in both construction and operation.
  • voltage sensor 142 includes a noninverting input 148 and an inverting input 153.
  • a diode 155 includes a cathode connected to a junction joining together a resistor 158, an emitter E of a bipolar transistor 161 and noninverting input 148.
  • the anode of diode 155 is connected to a junction joining together a resistor 164, resistor 158 and a base B of transistor 161.
  • a collector C of transistor 161 is connected to a junction joining together an output 167 of voltage sensor 142, and one end of a resistor 170.
  • resistor 170 The other end of resistor 170 is connected to a junction joining together a negative (-) terminal of a voltage supply 191, logic circuit 144, a driver 176 and junction 120.
  • a high voltage diode 173 is connected between inverting input 153 and resistor 164 with the cathode and anode of diode 173 connected to inverting input 153 and resistor 164, respectively.
  • Voltage sensor 142 operates as follows: Whenever the voltage at noninverting input 148 is about 1.4 volts or more than the voltage at inverting input 153, base current will be pulled from transistor 161 tu ing on the latter. Collector current flowing through resistor 170 results in a high logic level being produced at output 167. Whenever the voltage at noninverting input 148 is less than about 1.4 volts of the voltage at inverting input 153 , transistor 161 remains turned off. No collector current flows through resistor 170. Output 167 is now at a low logic level. When the voltage at inverting input 153 is as high as several hundred volts above the voltage at noninverting input 148 (i.e. when transistor Ql is turned off and transistor Q2 is turned on), most of the high voltage is dropped across the reverse biased junction of high voltage diode 173 thereby protecting the integrity of voltage sensor 142.
  • the feedback signal produced at output 167 by voltage sensor 142 represents a comparative state between a varying voltage and a substantially fixed voltage.
  • the voltage difference across transistor Ql is at or less than a predetermined level (i.e. voltage at noninverting input 148 is about 1.4 volts or more of the voltage at inverting input 153).
  • the voltage difference across transistor Ql is above this predetermined level (i.e. voltage at noninverting input 148 is less than about 1.4 volts of the voltage at inverting input 153).
  • Voltage sensor 141 of ballast 20 compares the voltage between drain D and source S of transistor Ql to a fixed threshold of several volts.
  • Voltage sensor 142 of ballast 25 compares the voltage between drain D of transistor Ql to the voltage at the positive (+) terminal of voltage supply 191.
  • the voltage across bootstrap capacitor 197 serves as a threshold reference for voltage sensor 142 which simplifies its design as compared to voltage sensor 141.
  • voltage supply 191 includes a voltage source Vdc for providing a D.C. voltage between about 12 to 15 volts.
  • a high voltage diode 194 is connected between voltage source Vdc and a junction joining together the positive (+) terminal of voltage supply 191 and a bootstrap capacitor 197.
  • the noninverting input of the voltage sensor which is connected to the positive (+) terminal of voltage supply 191 , varies between a voltage of Vdc (when transistor Q2 is turned on and transistor Ql is turned off) and the sum of the B-f and Vdc voltages (when transistor Q2 is turned off and transistor Ql is turned on).
  • Bootstrap capacitor 197 essentially serves as a battery at a constant voltage powering other components within the floating well including logic circuit 144 and driver 176.
  • FIGS. 6A and 6B illustrate the driving signals supplied to gates G of transistors Ql and Q2 by drivers 176 and 138, respectively.
  • the period of time that both transistors Ql and Q2 are turned off is identified as deadtime D.T.
  • FIG. 6C illustrates the voltage waveform of ballast 20 or 25 between junction 120 and bus 110.
  • the voltage between junction 120 and bus 110 is either rising from a reference voltage at bus 110 to the B-l- voltage at rail 100 (e.g. during period D.T. 1) or falling from the B-l- voltage at rail 100 to a reference voltage at bus 110 (e.g. during period D.T. 2).
  • the invention minimizes the deadtime during which transistors Ql and Q2 are both turned off just prior to transistor Ql being turned on (i.e. D.T. 1). More particularly, the invention in maintaining low switching losses for tu ing on transistor Ql automatically determines when zero voltage switching conditions are present across transistor Ql. By establishing this deadtime automatically, there is no need to generate turn on timing information to high side switch control circuitry by a level shifter. Both area and power dissipation required for level shifting circuitry are advantageously reduced.
  • timing circuit 135 and driver 138 circuitry similar to that associated with controlling the conductive state of transistor Ql (i.e. voltage sensor, logic circuit, driver) can be used for controlling the conductive state of transistor Q2. Under such conditions, separate timing circuits could be employed to generate reset signals for each logic circuit 144.

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  • Electronic Switches (AREA)

Abstract

Structure de circuit comprenant une paire de transistors montés en série suivant une disposition en totem pour constituer un pont entre deux bus soumis à des potentiels de tensions différents, et procédure permettant de commander l'état de conduction de l'un des deux transistors. La procédure de commande consiste à mesurer la différence de tension dans ce transistor en comparant une valeur sensiblement fixe, représentée par le potentiel de tension dans un des bus, à une valeur variable. La valeur variable est fondée sur la tension mesurée à un point de jonction entre les deux transistors. Lorsque la tension mesurée se trouve à une valeur inférieure ou égale à un niveau prédéterminé, ce transistor est mis sous tension.
PCT/IB1996/001182 1995-11-07 1996-11-04 Structure de circuit WO1997017761A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/IB1996/001182 WO1997017761A1 (fr) 1995-11-07 1996-11-04 Structure de circuit
DE69633006T DE69633006T2 (de) 1995-11-07 1996-11-04 Brückenschaltungsanordnung
JP9518017A JPH11502391A (ja) 1996-11-04 1996-11-04 回路装置
EP96935217A EP0823147B1 (fr) 1995-11-07 1996-11-04 Structure de circuit en pont

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08/553,228 1995-11-07
PCT/IB1996/001182 WO1997017761A1 (fr) 1995-11-07 1996-11-04 Structure de circuit

Publications (1)

Publication Number Publication Date
WO1997017761A1 true WO1997017761A1 (fr) 1997-05-15

Family

ID=11004490

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB1996/001182 WO1997017761A1 (fr) 1995-11-07 1996-11-04 Structure de circuit

Country Status (2)

Country Link
JP (1) JPH11502391A (fr)
WO (1) WO1997017761A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0891043A3 (fr) * 1997-07-10 2001-01-31 Dialog Semiconductor GmbH Montage avec une première unité de commande
US6436299B1 (en) 1999-06-21 2002-08-20 Amway Corporation Water treatment system with an inductively coupled ballast
WO2000078678A3 (fr) * 1999-06-21 2003-07-03 Amway Corp Systeme de traitement par un fluide
US6673250B2 (en) 1999-06-21 2004-01-06 Access Business Group International Llc Radio frequency identification system for a fluid treatment system
US7118240B2 (en) 1999-06-21 2006-10-10 Access Business Group International Llc Inductively powered apparatus
US7180248B2 (en) 1999-06-21 2007-02-20 Access Business Group International, Llc Inductively coupled ballast circuit
US7385357B2 (en) 1999-06-21 2008-06-10 Access Business Group International Llc Inductively coupled ballast circuit
US7408324B2 (en) 2004-10-27 2008-08-05 Access Business Group International Llc Implement rack and system for energizing implements
US7462951B1 (en) 2004-08-11 2008-12-09 Access Business Group International Llc Portable inductive power station
US7612528B2 (en) 1999-06-21 2009-11-03 Access Business Group International Llc Vehicle interface

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829949B2 (en) * 2012-01-17 2014-09-09 Franc Zajc Method and apparatus for driving a voltage controlled power switch device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0373693A2 (fr) * 1988-12-15 1990-06-20 STMicroelectronics S.r.l. Générateur de signaux de commande pour transistors connectés en une configuration en demi-pont
US5099138A (en) * 1989-11-22 1992-03-24 Mitsubishi Denki Kabushiki Kaisha Switching device driving circuit
US5214322A (en) * 1991-07-15 1993-05-25 Unitrode Corporation High voltage cmos power driver
US5343084A (en) * 1991-04-30 1994-08-30 Sgs-Thomson Microelectronics S.A. Variable level periodic excitation circuit for a capacitive load

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0373693A2 (fr) * 1988-12-15 1990-06-20 STMicroelectronics S.r.l. Générateur de signaux de commande pour transistors connectés en une configuration en demi-pont
US5099138A (en) * 1989-11-22 1992-03-24 Mitsubishi Denki Kabushiki Kaisha Switching device driving circuit
US5343084A (en) * 1991-04-30 1994-08-30 Sgs-Thomson Microelectronics S.A. Variable level periodic excitation circuit for a capacitive load
US5214322A (en) * 1991-07-15 1993-05-25 Unitrode Corporation High voltage cmos power driver

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0891043A3 (fr) * 1997-07-10 2001-01-31 Dialog Semiconductor GmbH Montage avec une première unité de commande
US7279843B2 (en) 1999-06-21 2007-10-09 Access Business Group International Llc Inductively powered apparatus
US7427839B2 (en) 1999-06-21 2008-09-23 Access Business Group International Llc Inductively powered apparatus
US6673250B2 (en) 1999-06-21 2004-01-06 Access Business Group International Llc Radio frequency identification system for a fluid treatment system
US7118240B2 (en) 1999-06-21 2006-10-10 Access Business Group International Llc Inductively powered apparatus
US7126450B2 (en) 1999-06-21 2006-10-24 Access Business Group International Llc Inductively powered apparatus
US7180248B2 (en) 1999-06-21 2007-02-20 Access Business Group International, Llc Inductively coupled ballast circuit
WO2000078678A3 (fr) * 1999-06-21 2003-07-03 Amway Corp Systeme de traitement par un fluide
US7639110B2 (en) 1999-06-21 2009-12-29 Access Business Group International Llc Inductively powered apparatus
US7385357B2 (en) 1999-06-21 2008-06-10 Access Business Group International Llc Inductively coupled ballast circuit
US6436299B1 (en) 1999-06-21 2002-08-20 Amway Corporation Water treatment system with an inductively coupled ballast
US7233222B2 (en) 1999-06-21 2007-06-19 Access Business Group International Llc Inductively powered apparatus
US7439684B2 (en) 1999-06-21 2008-10-21 Access Business Group International Llc Inductive lamp assembly
US7615936B2 (en) 1999-06-21 2009-11-10 Access Business Group International Llc Inductively powered apparatus
US7612528B2 (en) 1999-06-21 2009-11-03 Access Business Group International Llc Vehicle interface
US7462951B1 (en) 2004-08-11 2008-12-09 Access Business Group International Llc Portable inductive power station
US7408324B2 (en) 2004-10-27 2008-08-05 Access Business Group International Llc Implement rack and system for energizing implements

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