WO1997016847A1

WO1997016847A1 - Sample retaining method, sample rotating method, sample surface fluid treatment method and apparatuses for these methods

Info

Publication number: WO1997016847A1
Application number: PCT/JP1996/003178
Authority: WO
Inventors: Hitoshi Oka; Takao Satoh; Yoichi Takahara; Tomonori Saeki; Akio Saito
Original assignee: Hitachi, Ltd.
Priority date: 1995-10-31
Filing date: 1996-10-30
Publication date: 1997-05-09
Also published as: JP3440655B2; JPH09129587A

Abstract

In order to attain a fluid treatment apparatus of small dimensions and a high cleaness by retaining a sample stably by simple retainer guides in a Bernoulli's retainer and rotating the sample by a fluid jet, the retainer guides are formed so as to be mechanically separated from a sample retaining surface, and the sample is retained in a contacting state by ejecting a fluid thereto, the sample guides being rotated in a non-contacting state by a jet of the fluid. A plurality of fluid supply sources are connected to the retainer, and not less than one kind of fluid is supplied to the sample. Since the sample guides (8) prevent the tangential displacement of the sample (1), a continuous treatment using various kinds of fluids can be conducted in a non-air-contacting state by one mechanism. Since these sample guides (8) are rotated by a jet of a fluid, a driving motor and certain kinds of parts of the mechanism are not required, and a great reduction of the dimensions of the apparatus can be attained.

Description

Description Sample holding method, sample rotating method, sample surface fluid treatment method, and their devices

The present invention relates to a method for holding a plate-like sample in a fine contact state necessary for a manufacturing process of a thin film device, a rotating method, a fluid processing method, and an apparatus therefor, and particularly to a semiconductor manufacturing process requiring high cleanliness. The present invention relates to a method for holding a disk sample, a method for rotating a disk sample, a method for treating a fluid, and a device therefor. Background art

In recent years, the structure of thin film devices such as semiconductors, liquid crystal displays, and magnetic disks has been miniaturized, and a high degree of cleanliness in the manufacturing process is desired in order to improve the performance of these devices and the production yield. . In terms of semiconductor example, the size of the foreign substance to be removed is 0. 3 μ ιη above, contamination of the metal ions is 1 0 ⁹ atom ZCM ² or less, the thickness of the oxide film formed by exposure to air It is required to be 1 nm or less.

In addition, mixed production of various types is inevitable in order to suppress the expansion of capital investment, and equipment that can handle multiple manufacturing processes is required. For this reason, cleaning and etching equipment that connects each process must be more versatile, have higher performance, and be smaller.

As a specific measure to meet these requirements, a single-wafer processing method for processing substrate samples (hereinafter referred to as “samples”) one by one is being put into practical use. However, the conventional single-wafer processing method and apparatus have the following problems.

As a conventional example, for example, Japanese Unexamined Patent Publication No. Hei. Of the prior art). In the first conventional example, a sample is fixed by a substrate rotating means, and a surface is treated by jetting a fluid onto the sample surface while mechanically rotating the sample.

When plate-like sample 1 is rotated in a fluid, as shown in Fig. 1, fluid 2 flows from inside to outside of plate-like sample due to centrifugal action based on angular momentum. Go to sample 1. The flow rate of the stream is represented by the following number 55; 1 (Journal Electroanalytical Chemistry, vol. 69, p. 1 to 105 (1976)).

Q = 0 .89 S (ω v) ^{1 2}

-(Equation 1) where, Q: flow rate of one side toward the disk sample when rotating the disk sample

S: Area of one side of disk sample

ω: Rotation speed of disk sample

: The kinematic viscosity coefficient of the fluid.

When a silicon wafer (hereinafter, referred to as a wafer) is used as a disk sample, the flow rate is as shown in Fig. 2. FIG. 2 shows a case where the fluid is a liquid. At present, since the mainstream wafer is 8 inches, the liquid flow rate toward the wafer at a wafer rotation speed of 100 rpm requires about 71 / min. In the first conventional example, if the amount of the cleaning liquid to be sprayed is smaller than this value, the entire surface of the wafer cannot be covered with the cleaning liquid, and the insufficient flow rate is supplemented by the gas in the cleaning environment (generally air). In addition, the wafer is exposed to air, and the cleaning time is wasted. Otherwise, a large amount of cleaning liquid is required, and the processing cost of the wafer is significantly increased. In particular, the back surface (lower surface) of the wafer cannot form the flow on the lower surface in Fig. 1 due to the gravity of the liquid, and the cleaning stops at the injection point of the cleaning liquid, so that cleaning is practically impossible.

The cleaning solution that has left the wafer scatters around due to centrifugal force. Prevent this scattering When the side walls are provided and sealed to stop, the flow shown in Fig. 3 is generated (Matsuki Itaya: "Hydraulics", p. 119 (1977), Asakura Shoten) Return to the surface. Therefore, wafer 1 is re-contaminated. A cleaning solution containing contaminants adheres to the side wall 3. Therefore, due to the re-contamination phenomenon, it is impossible to continuously perform cleaning (processing) by one mechanism such as first cleaning (processing), second cleaning (processing), and third cleaning (processing). . In other words, it is necessary to provide a mechanism for the number of processes, and the device becomes large and expensive.

On the other hand, if the rotation of the wafer is performed by a drive motor, a gear and belt for power transmission are required, and a strong rotating shaft for stable rotation is required. The abrasion dust in these mechanisms follows the flow and contaminates the wafer. In addition, if the cleaning solution is corrosive, it will corrode these mechanical components and the corrosion products will contaminate the wafer. To prevent this, a precise sealing structure is required, and the equipment becomes complicated and expensive.

As a method for solving the problem of the first conventional example, Japanese Patent Publication No. Hei 4-69420, Japanese Patent Laid-Open No. 61-229750, Japanese Patent Laid-Open No. 60-7444 As described in Japanese Patent Publication No. 38 (hereinafter referred to as a second conventional example), there is a method of processing a sample using the Bernoulli effect of a fluid.

Fig. 4 shows the principle of holding a plate-like sample by the Bernoulli effect. When the fluid 2 is ejected from the ejection hole 5 of the fluid drilled near the center of the holder 4, a repulsive force: F acts on the holding surface of the holder 4 on the sample 1 due to the ejection force. Since it spreads radially in the circumferential direction while being sandwiched between the injection hole 5 and the sample 1 and the holder 4, a pressure change occurs, and a negative pressure: P acts on the sample 1. Therefore, the sample 1 is held in a non-contact state with the holder 4 at a position where F and P are balanced. In the second conventional example, the fluid 2 that causes the Bernoulli effect is used as a fluid for treating the surface of the sample 1.

The Bernoulli effect is, as described above, the normal direction of the holding surface of the holder 4. Sample 1 can be held in the direction perpendicular to the holding surface, but not in the direction tangential to the holding surface (in the direction parallel to the holding surface). If a stopper, a protrusion, a side wall, etc. are provided to prevent this, the following problems will occur.

Generally, when a plate-like sample is treated with a fluid, it is necessary to rotate the sample in order to achieve a uniform surface of the treatment. The wafer has a notch called orientation 'flat, which is not a perfect circle. While rotating such a sample, the centrifugal force applied to the sample is balanced even if the sample is slightly displaced due to fluctuations in the jetting force of the fluid caused by vibration, pulsation, pressure change, etc. of the pump that sends the fluid. Is severely torn, causing a sudden displacement in acceleration. For example, when rotating an 8-inch wafer at 1000 rpm, even if the center of rotation of the wafer is shifted by only 0.5 ππη, the imbalance in centrifugal force will cause the weight: 51.7 g wafer It occurs as much as pushing with about 3 grams of force. Therefore, the wafer repeatedly strikes or rubs against the stoppers, protrusions, and side walls, and the debris and abrasion powder contaminate the wafer.

The processing method using the Bernoulli effect does not solve the problem of the displacement of the sample in the tangential direction and has not been realized. In particular, when cleaning (processing) is performed continuously by one mechanism, such as cleaning I (processing), cleaning 2 (processing), and cleaning 3 (processing), a large spray force is required when the cleaning liquid is switched. At present, it has not been realized because of fluctuations. . In the region where the gas flow velocity is less than about half of the sound velocity (173 m / sec), the gas can be handled as an incompressible fluid. Is well known in the field of hydrodynamics.

An object of the present invention is to solve the above-mentioned problems of the prior art, and a first object is to provide a method for holding a tangentially stable sample using the Bernoulli effect. The second object is a method for stably rotating a sample held using the Bernoulli effect, and the third object is a sample holding method according to the present invention and a plate-like sample surface using the sample rotating method. A fourth object of the present invention is to provide an apparatus for treating a surface of a plate-like sample using a sample holding method and a sample rotating method according to the present invention. Disclosure of the invention

The present invention solves the above objects by the following technical means. The first object is to provide a sample guide for holding the sample, which is mechanically separated from the sample holding surface, in the direction in which the sample is to be held, and to allow a fluid to flow between the sample and the sample holding surface. This is achieved by a sample holding method characterized in that the sample is held in contact with the sample guide by utilizing the Bernoulli effect caused by the sample, and the sample position shift in the tangential direction as well as the normal direction of the sample holding surface is suppressed. You.

The second object is attained by a sample rotating method characterized by rotating the sample together with rotation of the sample guide in the sample holding method for achieving the first object.

The third object is to select a fluid to flow to generate the Bernoulli effect according to the treatment to be performed on the sample to be held, support the sample with a sample guide, and treat the sample surface. This is achieved by a fluid processing method characterized by performing the following.

The fourth object is to provide a sample holding means on which the sample holding surface is formed, and a fluid for flowing between the sample holding surface and the sample to generate a Bernoulli effect and for processing the sample surface. A fluid supply means for supplying the fluid, a fluid supply means for supplying the fluid for floating the fluid guide, and a fluid supply means for supplying the fluid for floating the fluid guide. And a fluid supply device for supplying a body.

ADVANTAGE OF THE INVENTION According to this invention, the stable holding | maintenance of the sample which was the subject of a prior art, and the highly clean processing which does not have recontamination can be implement | achieved.

BRIEF DESCRIPTION OF THE FIGURES

Fig. 1 is an explanatory diagram for explaining the flow of a fluid when a plate-like sample is rotated, and Fig. 2 is a diagram for explaining the flow rate required to form the fluid flow when the wafer is rotated. FIG. 3 is an explanatory view for explaining a flow of a fluid when a plate-shaped sample is rotated while being sealed with a side wall, and FIG. 4 is a view for explaining a Bernoulli holding. FIG. 5 is an explanatory diagram for explaining the principle, and FIG. 5 is an explanatory diagram for explaining the relationship between forces acting on a sample when a Bernoulli holder is used as the upper and lower holders. Fig. 7 shows the relationship between each force acting on the sample and the distance between the upper and lower holders. Fig. 7 shows the results when the sample is contacted and held when the Bernoulli holder is used as the lower holder. FIG. 8 is an explanatory view for explaining the relationship between the forces acting on the upper and lower holders. Fig. 9 is an explanatory view for explaining the relationship between the forces acting when the sample is held in contact with the sample, and Fig. 9 shows the relationship between each force acting on the sample and the distance between the upper and lower holders. FIG. 10 is a cross-sectional view for explaining the structure of three embodiments of a sample guide for contacting and holding a sample, and FIG. 11 is a view for explaining the principle of rotating the sample. FIG. 12 is an exploded view of the components of FIG. 12. FIG. 12 is a cross-sectional view for explaining the principle of rotating the sample. FIG. 13 is an upper holder, a sample guide, and a sample guide according to the present invention. FIG. 14 is an exploded view of components of one embodiment, such as a plate and a lower holder, FIG. 14 is a cross-sectional view showing a main part configuration of an upper holder according to the present invention, and FIG. FIG. 8 is a plan view showing an example of the arrangement of the fluid ejection holes of the upper holder according to FIG. 16 is a cross-sectional view showing a main part configuration of the sample guide according to the present invention. FIG. 17 is a plan view showing a main part configuration of the sample guide according to the present invention. FIG. 19 is a cross-sectional view illustrating a configuration of a main part of the lower holder according to the present invention. FIG. FIG. 2 is an explanatory diagram showing a main configuration of an example enabling fluid treatment according to the present invention. FIG. 21 is a diagram showing a removal rate of silicon powder, and FIG. FIG. 23 is a diagram showing the ion removal rate. FIG. 23 is a development view of components of one embodiment, such as an upper holder, a sample guide, a sample guide 扳, a turntable, and a lower holder according to the present invention. FIG. 24 is a cross-sectional view showing a configuration of a main part of the lower holder according to the present invention. FIG. FIG. 26 is a plan view showing an example of the arrangement of the rotating table, FIG. 26 is a cross-sectional view after assembling a rotating table lid, a sample guide, a sample guide plate, and a rotating table. FIG. 28 is a cross-sectional view showing a configuration of a main part of the sample guide according to the present invention. FIG. 28 is a plan view showing an example of an arrangement of fluid injection holes that levitate and rotate the sample guide according to the present invention; FIG. 29 is an explanatory view showing a meniscus when the upper and lower holders are used, FIG. 30 is a diagram showing a suppressing force when the upper and lower holders are used, and FIG. FIG. 3 is an explanatory diagram showing a main configuration of an embodiment that enables fluid processing according to the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

Before describing the detailed embodiments of the present invention, the principle of each element technology will be described.

First, a description will be given, with reference to FIGS. 5 and 6, of a force for suppressing a sample position shift in a direction normal to a holding surface of a sample held by the upper and lower Bernoulli effects. Sample 1 in FIG. 5, F i, P,, in addition to the four forces F _2, P _2, sample The weight of 1 and the sum of the weight of the fluid on the sample 1: W, is held at a position where the five forces are balanced, without contact with holders 4 and 6 (floating state). Since each no means for measuring the individual force, holding the height of the sample using well known fluid dynamics relationship: hi, it calculates the h _2, to give the Figure 6 as an example

In this calculation, a 5-inch wafer was used: sample diameter: 125 mm, sample weight: 15.6 g, sample thickness: 0.55 mm, diameter of fluid injection hole: 1 mm , Fluid injection hole position: Center, Fluid: Water, Injection flow rate: Calculated under the condition of 51 Zmin.

If the distance between the holders excluding the thickness of the wafer exceeds about 5 mm, the Bernoulli effect suction force: P _;, P ₂ becomes zero. That is, if the distance between the holders is within about 5 mm, the sample 1 is held in the normal direction of the holding surface. Next, an example will be described with reference to FIGS. 7 and 8 of how the holder and the sample guide according to the present invention suppress the displacement of the sample holding surface in the tangential direction.

Fig. 7 shows a cross-sectional view of the case with only the lower holder, showing the direction and type of the force applied to sample 1. A sample guide 8 with a height of about 5 mm or less from the holding surface is fixed on the upper surface of the lower holder 4, and when fluid is ejected from the injection hole 5, the force 1: F: and P _: act on the sample 1, Fixed to sample guide 8 with force: G. The equilibrium of all forces is given by Equation 2 below.

IPJ ^ IGI + IF.I (Equation 2) FIG. 8 is a cross-sectional view when the upper and lower holders are used, and shows the direction and type of force applied to the sample 1. Upper surface of lower holder 4: When upper holder 6 is brought within approximately 5 mm and fluid is ejected from injection hole 7, force 1: F ₂ and P ₂ act on sample 1. The balance of all forces is given by Equation 3 below.

I W I + I P ^ + I F ^ ^ I G I + I P ^ + I F. I

… (Equation 3) Under the same conditions as in Fig. 6, the fixing force of sample 1 to sample guide 8: G was obtained by calculation. Fig. 9 shows the results. Flow rate of injection hole 5: 5 1 / min, Flow rate of injection hole 7: 31 1 min Except for min, using the calculation conditions in Fig. 6, distance between holding surface of lower holder 4 and sample 1: 2 mm When the distance between the holding surface of the upper holder 3 and the sample 1 is increased, the force for pressing the sample 1 against the lower holder 6 increases. For example, when the distance between the upper and lower holders excluding the thickness of the sample is 4 mm, F _; = l .7, P ₂ = 0.2, P; = -0.2, W =-1, F ₂ = — 4.5 N, so we get 3.8 N as G. Therefore, the sample is pressed against the sample guide 8 with a large force of 380 g.

FIGS. 10 (a) to 10 (c) are cross-sectional views showing three examples of the sample guide 8 used in the present invention.

Fig. 10 (a) shows the structure of the sample guide 8 that simply supports the sample 1 from below, and the force that suppresses the displacement of the sample 1 in the tangential direction with respect to the holding surface. The fixing force is the frictional force proportional to G between the materials constituting sample 1 and sample guide 8.

FIG. 10 (b) shows an L-shaped sample guide 8, which physically suppresses the displacement in addition to the frictional force.

FIG. 10 (c) shows the sample guide 8 tapered so that the distance from the holding surface decreases toward the center of the sample 1. In this case, assuming that the taper angle with respect to the holding surface is Θ, the fixing force is G s i η c 0 s 6, and this force suppresses displacement in the tangential direction. The tapered sample guide 8 facilitates the positioning of the sample 1 with respect to the holder 4 and is more useful. It is not necessary to provide these sample guides 8 on the entire circumference of the holder, and a plurality of these sample guides may be arranged on the circumference so that the fluid can flow out of the holder.

As described above, according to the present invention, the Bernoulli effect acting on a sample is reduced. Thus, the sample is held in the normal direction of the holding surface, and is also held in the tangential direction of the holding surface by a simple sample guide. Therefore, even if the ejection force fluctuates due to the vibration, pulsation, pressure change, etc. of the pump that ejects the fluid, the sample is not displaced, and as a result, the sample can be stably held. In addition, the surface of the sample is treated while the sample is sandwiched between the upper and lower holders at a small interval, preventing contamination from outside the holder and eliminating the need for re-contamination. To achieve.

Next, an example of the sample rotating method according to the present invention will be described with reference to FIGS. 11 and 12. FIG. FIG. 11 is a development view of the components, and FIG. 12 is a cross-sectional view thereof.

It consists of a sample guide plate 9 in which a sample guide 8 is fixed on a lower holder 4, a sample 1, and an upper holder 6. The sample guide plate 9 is mechanically separated from the upper and lower holders 4 and 6, and is independent. As described above, the sample 1 is fixed to the sample guide plate 9 through the sample guide 8 by the Bernoulli effect generated by the fluid ejected from the fluid injection hole 5-1. By ejecting the fluid from the fluid ejection holes 5-2, the sample guide plate 9 floats above the lower holder 4, and becomes completely unrelated to the lower holder 4 mechanically. Therefore, if the injection hole 5-2 injects the fluid in the desired rotation direction of the sample 1 with an inclination to the holding surface, the sample guide plate 9 is lifted up from the lower holder 4 by the action of the injection force. And rotate.

By using the fluid treatment method of the present invention as described above, it is possible to select a fluid such as a first cleaning (processing), a second cleaning (processing), and a third cleaning (processing), which are problems of the related art. In addition, it is possible to perform cleaning (processing) continuously by one mechanism, and by this continuous processing, it is possible to realize cleaning (processing) that does not come into contact with air.

In addition, according to the fluid treatment apparatus of the present invention, the problem of the prior art has been considered. Eliminates the need for drive motors, power transmission gears, belts, etc.

It enables continuous cleaning (processing) with one mechanism, and also enables cleaning (processing) without contacting air. Therefore, it is possible to realize a significantly high-purity and small-sized device.

Hereinafter, in order to explain the present invention in detail, embodiments applied according to the attached drawings will be described.

In the present embodiment, as will be described later, an example in which a holder is used as a sample guide plate rotating table and a method of rotating the sample guide is described.

FIG. 13 is a development view of components such as the upper holder 6, the sample 1, the sample guide 8, the sample guide plate 9, and the lower holder 4 used in the present embodiment.

FIG. 14 shows a detailed sectional view of the upper holder 6. The upper holder 6 includes an upper spray plate 10 for spraying a fluid, a 0-ring 11 for separating a fluid flow path, and an upper supply plate 12.

The upper spray plate 10 is made of polytetrafluoroethylene (hereinafter, referred to as PTFE) having a diameter of 170 mm and a thickness of 20 mm, and the surface facing the sample 1 has a surface as shown in FIG. In addition, a hole of approximately the same size is given to the rotation center of the sample 1 and the hole is drilled at a position where the sum of the vectors of the injection force is almost zero. The arrow in FIG. 15 indicates that the hole is drilled obliquely at an angle of 45 with the holding surface in the direction of the arrow (the same applies hereinafter). The Bernoulli effect that occurs between the sample 1 and the upper holder 6 is caused by ejecting a fluid from five orifices 7-1 having a diameter of 1 mm. The injection hole 7-2 with a diameter of 1 mm is used mainly for drying sample 1 to scatter water droplets attached to the contact point between sample 1 and sample guide 8.

0 — Ring 1 1 is made of tetrafluoroethylene perfluoroalkyl vinyl ether copolymer (hereinafter referred to as PFA) and has a wire diameter of 5.7 mm. Diameter: 49.6 mm and 19.6 mm.

The upper supply plate 12 is made of PTFE having a diameter of 170 mm and a thickness of 10 mm, and has a supply hole 13 of 1 mm in diameter for supplying fluid.

The upper spray plate 10 and the upper supply plate 12 are fixed to each other with a 5-mm diameter bolt made of polyester ether ketone (hereinafter referred to as PEEK) with the 0-ring 11 interposed therebetween.

FIG. 16 is a cross-sectional view of the sample guide plate 9 to which the sample guide 8 is fixed, and FIG. 17 is a plan view thereof.

The sample guide 8 is L-shaped with a total height of 4 mm and a sample holding height of 3 mm, and is made of PEEK. Sample guide No. 9 is made of PTFE having an outer diameter of 144 mm, an inner diameter of 125 mm and a semicircular cross section of 20 mm in diameter.

FIG. 18 shows a detailed sectional view of the lower holder 4. The lower holder 4 is composed of a lower ejection plate 14 for supplying a fluid, a 0-ring 11 for separating a fluid flow path, and a lower ejection plate 15.

The lower spray plate 14 is made of PTFE having a diameter of 170 mm and a thickness of 30 mm, and the surface facing the sample 1 has a half of a diameter of 20.2 mm for accommodating the sample guide plate 9. A circular groove is dug. Further, as shown in Fig. 19, the surface of the surface, as shown in Fig. 19, is a fluid injection hole 5 for generating the Bernoulli effect, a floating hole 17 for floating the sample guide plate 9, and a rotating and holding sample guide plate 9. A rotating hole 18 that is formed at an angle of 45 ° with respect to the surface and a brake on the rotating sample guide plate 9 at an angle of 45 ° with respect to the holding surface. Braking holes 19 are formed as holes having a diameter of 1 mm. These piercing angles are effective in the range of 80 to 180 force ± 45. Is desirable.

0—Ring 11 is made of PFA and has a wire diameter of 5.7 mm and an inner diameter of 49.6 mm, 69.6 mm, 89.6 mm, and 109.6 mm. The lower supply plate 15 is made of PEEK with a diameter: I 70 mm and a thickness: 10 mm. The supply holes 16-1, 16-2, 16-3, 16-4 for supplying fluid are provided. Diameter: 1 mm perforated.

FIG. 20 conceptually illustrates a fluid treatment method and a fluid treatment apparatus for treating sample 1 by injecting various fluids using the upper holder 6, the sample guide plate 9, and the lower holder 4. This is shown in FIG.

Hereinafter, the fluid processing method will be described. The solenoid valves all start from a closed state.

Place the sample guide plate 9 on which the sample 1 is set on the lower holder 4 and open the solenoid valves 21-1, 21-2, 21-3 of the inert gas cylinder 20 to inactivate The gas is injected at a flow rate of 61 / min, the sample guide plate 9 is lifted from the lower holder 4, and the sample 1 is held on the lower holder 4 by Bernoulli effect.

Bring the upper holder 6 to a distance of 1 mm above the sample 1, open the solenoid valves 2 1 — 4 and 2 1 — 5 and inject inert gas at a flow rate of 30 1 / min. A Bernoulli effect occurs between the upper holders 6.

Close the solenoid valves 2 1-1 and open the solenoid valves 2 1-6 and 2 1-7 to spray the processing liquid in the processing liquid tank I 22 at a flow rate of 31 / min. Rotation, processing of the back side of sample 1 starts.

With the solenoid valves 2 1 to 4 closed and the solenoid valves 2 1 to 8 opened, the processing liquid in the processing liquid tank I 22 is sprayed at a flow rate of 2 1 / min, and the processing of the surface of sample 1 is started. You.

After the treatment for a predetermined time, the solenoid valves 21 to 6 are closed, the solenoid valves 21 to 9 are opened, and the treatment liquid in the treatment liquid tank II 23 is injected at 3 \ / m \ η, and the sample 1 The processing on the back of is started.

Close the solenoid valves 2 1-8 and open the solenoid valves 2 1-10 to set the processing liquid tank II The treatment liquid of 23 is injected at a flow rate of 21 / in, and the treatment of the surface of sample 1 is started.

After the treatment for a predetermined time, close the solenoid valves 21 to 9 and open the solenoid valves 21 to 1 to inject an inert gas at a flow rate of 61 Zin and dry the back surface of the sample 1. .

Close the solenoid valves 2 1-10, open the solenoid valves 2 1-4, 2 1 1 1 1 1 and inject inert gas at a flow rate of 60 Im 1 n. Is dried. After drying for a predetermined period of time, close the solenoid valves 2 1 to 7 and open the solenoid valves 21 to 12 to brake the rotation of the sample guide plate 9.

When the rotation of the sample guide plate 9 stops, all the solenoid valves are closed, the upper holder 6 is retracted upward, and the processed sample 1 is taken out.

In FIG. 20, parts such as the fixing of the holder, the moving mechanism, the fluid temperature controller, and the fluid flow controller, which are not related to the essence of the present invention, are omitted. Hereinafter, the experimental results will be specifically described.

[I] Sample

The wafer is a Shin-Etsu Chemical 6 inch wafer with a diameter: 150 mm, a thickness: 0.55 mm, a weight: 21.4 g, and a resistivity: 6.01 to 12.0 Ωcm. You. This wafer was immersed in a 50% hydrofluoric acid: water = 1: 99 aqueous hydrofluoric acid solution to which a silicon powder having a particle size of about 0.2 μπι was added for 15 minutes to obtain a wafer. About 900 pieces of silicon powder were adhered to the surface. The cleaning performance was determined from the silicon powder removal rate.

cm fluid

(1) Treatment liquid tank I

28 8% aqueous ammonia: 30% aqueous hydrogen peroxide: water = 1: 2: 7 aqueous solution.

Temperature: 80 ° C (2) Processing liquid tank! 1

Ultra pure water. Temperature: room temperature

(3) Inert gas cylinder

Nitrogen gas at 120 atm. Temperature: room temperature.

(I I I) Fluid treatment time

(1) For the fluid in the treatment liquid tank I, the treatment was performed for a predetermined time shown in FIG.

(2) Processing liquid tank! One fluid lasted 120 seconds.

(3) Inert gas cylinder fluid was used for 180 seconds.

[IV] Evaluation of silicon powder removal rate

The number of adhered silicon powder before and after the above treatment was measured using a laser surface inspection device manufactured by Hitachi Electronics Engineering, and the removal rate (%) was determined.

The experimental results obtained under the above conditions are shown in Fig. 21. Processing was approximately three times faster than with a conventional rotary surface treatment device.

Example 2>

An experiment was performed using the same fluid treatment method and apparatus as in Example 1.

[I] Sample

Using the same wafer as in Example 1, this wafer was treated in a 28% aqueous ammonia: 30% aqueous hydrogen peroxide: water = 1: 2: 7 aqueous solution at 80 ° C. for 10 minutes. Next, the wafer was immersed in a hydrofluoric acid aqueous solution of 50% hydrofluoric acid: water = 1: 99 for 2 minutes to remove a natural oxide film on the wafer surface. After washing with water, the wafer was immersed in an aqueous solution obtained by diluting a desired standard solution for atomic absorption analysis for 30 minutes to prepare a wafer contaminated with various metal ions. As a result, about 10 ¹ ′ to ^{10 12} atoms / cm ² of metal ions adhere to the wafer.

[Π] Fluid

(1) Treatment liquid tank I

36% hydrochloric acid aqueous solution: 20% aqueous hydrogen peroxide solution: water = 1: 1: 5 aqueous solution. Temperature: 80. C

(2) Treatment liquid tank Π

Ultra pure water. Temperature: room temperature.

(3) Inert gas cylinder

Nitrogen gas at 120 atm. Temperature: room temperature.

[II I] Fluid treatment time

(1) Performed for 90 seconds with the fluid in treatment liquid tank I

(2) In the fluid treatment tank II was carried out 1 2 0 sec ₃

(3) Inert gas cylinder fluid was used for 180 seconds.

[IV] Evaluation of metal ion removal rate

The number of adhering metal ions before and after the above treatment was measured using a total reflection X-ray fluorescence analyzer made by Technos: TREX610, and the removal rate (%) was determined. The experimental results obtained under the above conditions are shown in Fig. 22. The processing was at a high speed equal to or higher than that of the conventional rotary surface treatment equipment.

Example 3>

[I] Sample

A stepped polysilicon wafer was used.

[ΙΠ Fluid

(1) Treatment liquid tank I

50% hydrofluoric acid: water = 1 · 99 aqueous solution.

ίέι degree ¾½.

(2) Treatment liquid tank II

Ultra pure water. Temperature: room temperature.

(3) Inert gas cylinder

Argon gas at 120 atm. Temperature: room temperature. [III] Fluid treatment time

(1) For the fluid in the processing liquid tank I, the operation was performed for 90 seconds.

(2) The treatment liquid tank H was used for 120 seconds.

(3) Inert gas cylinder fluid was used for 240 seconds.

[IV] Evaluation of watermarks

The drying spot generated when the wafer is dried is called a watermark. The main cause is that oxygen in the air dissolves in water droplets adhering to the wafer, oxidizes and dissolves the silicon of the wafer, and the dissolved matter remains as a dry residue.

This water mark has a diameter of about 1 to several 10 μm, and is observed at a magnification of 10,000 to 80,000 using an electron microscope S-7100 manufactured by Hitachi, Ltd. The number of occurrences was measured.

The experimental results obtained under the above conditions are as follows. Example: 4 pieces / cm Rotary surface treatment method: 47 pieces Z cm ′-, batch type IPA vapor drying: 8 pieces Z cm ² . In other words, the number of occurrences was significantly smaller than that of the conventional rotary surface treatment equipment. Furthermore, good results were obtained compared to the current mainstream mass production technology, steam drying of IPA (isopropyl alcohol). ADVANTAGE OF THE INVENTION According to this invention, since a wafer is pinched | interposed by a fine space | interval with an up-and-down holder, a wafer does not contact air during processing, It proves that it is suitable for prevention of generation | occurrence | production of a watermark.

Example 4>

In the present embodiment, one example of a fluid processing method and apparatus in which the sample guide plate is completely separated from the sample holder while the sample holder is not used as the sample guide plate turntable will be described.

FIG. 23 shows the upper and lower holders 4 and 6 used in the present embodiment, the sample 1, the turntable lid 2, the sample guide 8, the sample guide plate 9, the turntable 25 and other components. FIG.

The structure of the upper holder 6 is the same as in FIGS. 14 and 15 except that the diameter thereof is set to 154 mm.

FIG. 24 shows a detailed sectional view of the lower holder 4. The lower holder 4 includes a lower jet plate 14 for jetting a fluid, a 0-ring 1 i for separating a fluid flow path, and a lower feed plate 15. The lower spray plate has a diameter of 154 mm and has almost the same diameter as the 6-inch wafer used as sample 1, and a thickness of 301: 111? Ding? As the £ made in Aru _£ opposing surfaces to the sample 1 shown in the second 5 Figure, against the center of rotation of the sample gives a substantially moment of the same size, and the sum of the base-vector of jet force An injection hole 5-1 with a diameter of 1.2 mm is drilled at a position where it is almost zero. Further, a storage groove 26 for storing the sample guide 8 shown in FIG. 26 described later, which has a width of 2 mm, a length of 5 mm, and a depth of 15 mm, is cut. An injection hole 5-2 with a diameter of 1 mm that scatters water droplets adhering to the contact point between the sample 1 and the sample guide 8 is drilled near the storage groove 26.

FIG. 26 is a cross-sectional view after assembling the turntable lid 24, the sample guide 8, the sample guide plate 9, and the turntable 25. The turntable lid 24 and the turntable 25 are connected by a port, and the sample guide plate 9 is stored in the gap therebetween. When fluid is ejected from the floating holes 17, the sample guide plate 9 floats from the turntable 25. The rotation hole 18 has a hole with a diameter of 1 mm, which is oblique to the direction in which the sample guide plate 9 is rotated. The braking hole 19 is formed with a hole having a diameter of 1 mm, which is oblique in the opposite direction to the rotating hole 18 in order to brake the rotation of the rotating sample guide plate 9. The injection angles of the rotating hole 18 and the braking hole 19 are effective in the opposite directions of 10 to 80 °, but preferably 45 °. The rotating shaft hole 27 is perforated with a hole having a diameter of 1 mm, and holds the rotating sample guide plate 9 in a non-contact manner with the rotating shaft of the rotating base 25 by jetting a fluid. The turntable lid 24 is made of PE EK having a thickness of 3 mm. Sample guide plate turntable 25 thickness: 16 mm PEEK. The sample guide plate 9 is made of PEEK with a thickness of 2 Omm.

Thus, the sample guide plate 9 that holds and rotates the sample 1 is completely independent of the upper holder 6 and the lower holder 4 mechanically. FIG. 27 shows an example of the positions of the injection holes for ejecting the fluid of the turntable 25 and the ejection direction.

The operation of storing the sample guide 8 in the storage groove 26 of the lower holder 4 and exposing it from the storage groove 26 is shown in FIG. That is, the sample guide 8 is stored in the storage groove 26 by the vertical movement of the turntable 25 or the lower holder 4. Thus, as described later, when the fluid is a liquid, the sample 1 is processed in a non-contact state, and when the fluid is a gas, the sample guide 8 is made to appear and the sample 1 is contacted and processed. To be able to

As shown in Fig. 29, when the fluid is a liquid, a meniscus is formed between the upper holder 6, the lower holder 4 and the sample 1 sandwiched between them by the large surface tension of the liquid. Is done. Even if Sample 1 is displaced as in Sample I 'and deforms the shape of the meniscus, the new meniscus has the effect of keeping the surface area to a minimum and returning to the original meniscus. Therefore, the displacement of the sample 1 from the holding surface in the tangential direction is suppressed.

FIG. 30 shows an example of the result of measuring the suppression force. The measurement was performed in the state shown in Fig. 29. The sample used was a 5-inch wafer with a diameter of 125 mm, and the upper and lower holders were made of PTFE with a diameter of 110 to 135 mm, and the distance between the upper and lower holders was measured. : 1.76 mm, liquid: water, the above-mentioned restraining force was obtained by connecting the wafer and the electronic balance with a thread. As a result, it was found that a large restraining force works with the holder size within the sample dimensions of -8 mm and +4 mm. In other words, when the fluid is a liquid, if the holder size is within the range of 18 mm and 14 mm with respect to the sample size, the sample can be held and processed without contact.

When the fluid is a gas, the surface tension is substantially 0, As in the case, the suppression force does not occur. Therefore, when the fluid is gas, the sample guide prevents the tangential displacement with respect to the sample holding surface by the sample guide. As a result, the treatment with the liquid in the stored state of the sample guide 8 can be performed. It is possible to perform the treatment with gas in the appearance state of, and to realize the highest possible clean treatment.

Hereinafter, the fluid treatment method and its apparatus will be described with reference to FIG. Note that all solenoid valves start in a closed state.

First, the turntable 25 of the sample guide plate 9 is moved upward, the sample guide 8 is made to appear, and the sample 1 is placed on the sample guide 8. Next, the turntable 25 is moved downward, and the distance between the sample 1 and the holding surface of the lower holder 4 is set to about 3 mm. Open solenoid valves 30-1 and 30-2, inject inert gas at a flow rate of 301 Z min, and hold sample 1 in sample guide 8.

Bring it upward so that the holding surface of the upper holder 6 is at a distance of about 1 mm from the sample 1.

The solenoid valves 30 — 3 and 30 — 4 are opened, and an inert gas is injected at a flow rate of 30 I in to cause the Bernoulli effect between the upper holder 6 and the sample 1. Open the solenoid valves 3 2-1, 3 2-2, 3 2-3, inject the air in the high-pressure air tank 31 at a flow rate of 61 / min, and move the sample guide plate 9 from the turntable 25. While floating, rotate the sample guide plate 9 at about 100 rpm. When the solenoid valves 30-1 are closed and the solenoid valves 30-6 are opened, the processing liquid in the processing liquid tank I22 is injected at a flow rate of 21 / in, and processing on the back side of the sample 1 is started. You.

Close the solenoid valves 30-3 and open the solenoid valves 30-6 to spray the processing liquid in the processing liquid tank I 22 at a flow rate of 2 1 / min, and open the processing of the surface of sample 1. Begun. Immediately, the sample guide 8 is stored in the storage groove 26, and the sample 1 is processed while rotating at about 90 rpm in a non-contact state. In the case of performing the gas treatment as the first treatment above, after the inert gas is ejected on both the front and back surfaces of the sample 1, instead of ejecting the treatment liquid in the treatment liquid tank I22, The gas in the processing gas tank 28 is injected. That is, the electromagnetic valves 30-3 are closed, the electromagnetic valves 29-1 and 29-2 are opened, and the inert gas is passed through the processing gas tank 28 using the inert gas as the carrier gas to process the desired component gas. Create body and treat sample 1 surface. After the treatment for a predetermined time, the solenoid valves 29-1 and 29-2 are closed, and the solenoid valves 30-3 are opened to inject the inert gas to completely remove the treated gas. After that, it shifts to the injection of the processing solution in the following processing solution tank # 23.

After the treatment for a predetermined time, the solenoid valves 30 to 5 are closed and the solenoid valves 30 to 7 are opened, and the treatment liquid in the treatment liquid tank Π 23 is injected at a flow rate of 21 / min. Is started.

When the solenoid valves 30-6 are closed and the solenoid valves 30-8 are opened, the processing liquid in the processing liquid tank II 23 is sprayed at a flow rate of 21 / min, and processing of the surface of sample 1 is started. You.

After processing for a predetermined time, solenoid valves 30-7 are closed, solenoid valves 30-1 are opened, and an inert gas is injected at a flow rate of 301 / min to start drying the back surface of sample 1. Is done.

With solenoid valves 30-8 closed, solenoid valves 30-3 and 30-9 opened, an inert gas is injected at a flow rate of 301 Zin, and the surface of sample 1 starts drying. .

After drying for a predetermined time, close the solenoid valves (30-1) and (30-3) to finish drying.

Close the solenoid valves 3 2-2 and open the solenoid valves 32-4 to brake the rotation of the sample guide plate 9.

When the rotation of the sample guide plate 9 stops, close all the solenoid valves. Withdraw upper holder 6 upward, and take out sample 1.

In FIG. 31, parts such as a fixing and moving mechanism for the holder, a fluid temperature controller, and a fluid flow controller, which are not related to the essence of the present invention, are omitted. However, the fluid ejected by the lower holder 4 is heated to a desired temperature by the temperature control 33, and the processing temperature of the sample 1 can be adjusted by transmitting the temperature of the fluid from the back surface of the sample.

Hereinafter, the experimental results will be specifically described. In this embodiment, the first processing fluid is liquid, the second processing fluid is liquid, and the third processing fluid is gas.

[〗] Sample

This is the same as the [I] sample in Example 1>.

[i n fluid

<II> of <Example I> Same as the fluid.

[I I I] Fluid treatment time

This is the same as the [πι] fluid treatment time in Example 1>.

[IV] Evaluation of silicon powder removal rate

Example 1> [IV] The same as in the evaluation of the silicon powder removal rate.

The experimental results obtained under the above conditions were almost the same as those of <Example 1>.

Example 5>

An experiment was performed using the same fluid treatment method and apparatus as in Example 4>. In this embodiment, the first processing fluid is a gas, the second processing fluid is a liquid, and the third processing fluid is a gas.

[I] Sample

Wafers are the same as in Example 1> heat-treated at 950 in oxygen containing 1% water vapor for 54 minutes to form a 180 nm thermal oxide film on the wafer surface Was used. [II] Fluid

(1) Treatment liquid tank H

Ultra pure water. Temperature: room temperature.

(2) Inert gas cylinder

Nitrogen gas at 120 atm. Temperature: room temperature.

(3) Processing gas tank

Nitrogen gas is flowed into liquid hydrofluoric anhydride to create a gas containing 2% hydrofluoric acid gas and water vapor. Temperature: room temperature.

[III] Fluid treatment time

(1) Processing liquid tank Processing was performed for 120 seconds with the processing fluid in Π.

() The treatment was performed for 180 seconds with an inert gas cylinder treatment fluid.

(3) The processing was performed for 35 seconds at a flow rate of 1 1 1 Zmin with the processing fluid in the processing gas tank.

[IV] Evaluation of thermal oxide film

The thickness of the thermal oxide film was measured with an ellipsometer, and the processing speed (etching speed) was determined from the values before and after the processing. After the treatment, hydrofluoric acid adhering to the wafer surface was measured by the concentrated ion electrode method.

Under the above conditions, it was found that the thermal oxide film was etched at the speed of SSO nmZ min by the above processing gas. Furthermore, in the etching using the above processing gas, about 7 × 10 ¹³ atoms / cm ² of fluorine atoms adhere to the wafer surface, but it can be seen that the processing liquid tank II treatment can reduce the number to about 10 ¹¹ atoms Zc in ^2. Was. One mechanism enables continuous processing of gas → liquid → gas.

Example 6>

An experiment was conducted using the same fluid treatment method and apparatus as in Example 4>. Note that the first processing fluid is a gas, The second processing fluid is a liquid, and the third processing fluid is a gas.

[I〗 sample

Wafer Wafer Same as in Example 1), using a gas containing 3% disilane and phosphine, and a 150-nm doped poly-silicon layer on the wafer surface by aging CVD at 50 ° C. A film was formed.

[II] Fluid

(1) Treatment liquid tank π

Ultra pure water. Temperature: room temperature.

(2) Inert gas cylinder

Nitrogen gas at 120 atm. Temperature: room temperature.

(3) Processing gas tank

Flow nitrogen gas through the liquid chlorine trifluoride to produce nitrogen gas containing 0.2% chlorine trifluoride. Temperature: room temperature.

[Π1] Fluid treatment time

(1) Processing was performed for 120 seconds with the processing fluid in the processing liquid tank II.

(2) The processing was performed for 180 seconds with the processing fluid of the inert gas cylinder.

(3) The processing was performed for 45 seconds at a flow rate of 131 / min with the processing fluid in the processing gas tank.

UV] Evaluation of doped polysilicon

The thickness of the doped polysilicon film was measured with an ellipsometer, and the processing rate (etching rate) was determined from the values before and after the processing. After the treatment, hydrofluoric acid adhering to the wafer surface was measured by the concentrated ion electrode method.

Under the above conditions, it was found that the doped polysilicon film was etched at a rate of 250 nm / min by the processing gas. Furthermore, in the etching by the process gases from adhering fluorine atom about 5 X 1 0 ¹³ atoms Ji m ² on the wafer surface, the processing of the processing liquid tank 11, from about 1 0 ^{1 1} It was found that it can be reduced to atoms / cm ² . One mechanism enables continuous gas-liquid-gas processing. In addition, chlorine trifluoride is a very corrosive compound. <The apparatus of the present invention was not corroded at all.

Although described in detail above, the present invention is not limited to the above embodiment. The rotating table of the sample guide may be arranged on the left and right of the holder, or may be arranged on the upper holder by reversing the upper and lower holders shown in FIG. Unless corrosive fluids are used, or if a high degree of cleanliness is not required, the rotation of the sample guide may be driven by a drive motor rather than by spraying the fluid. Industrial applicability

As described in detail above, according to the present invention, the above first to fourth objects can be achieved. That is, a sample guide for holding the sample is provided in the direction in which the sample is to be held and is mechanically separated from the sample holding surface, and a fluid is caused to flow between the sample and the sample holding surface. A method and apparatus for holding a sample, wherein the sample is held in contact with the sample guide using the Bernoulli effect, and the displacement of the sample in the tangential direction is suppressed together with the normal direction of the sample holding surface. Can be provided.

Further, it is possible to provide a sample rotating method and apparatus, wherein the sample guide is mechanically separated from the sample holding surface, and the sample is rotated together with the rotation of the sample guide.

Further, according to the processing to be performed on the sample to be held, a fluid to be flowed to generate the Bernoulli effect is selected, the sample is supported by the sample guide, and the processing of the sample surface is performed. A fluid treatment method and apparatus characterized by the following can be provided.

Further, according to the present invention, it is possible to perform high-purity, single-wafer physical and scientific treatment with a fluid without contact with air, and to further reduce the size. It is possible to provide a simple fluid processing apparatus.

As described above, the present invention is extremely effective when used particularly in a semiconductor manufacturing process requiring cleanliness.

Claims

The scope of the claims

1. In the sample holding method for holding a sample by using the Bernoulli effect generated by flowing a fluid between a sample to be held and a sample holding surface facing the sample, the position of the sample with respect to the sample holding surface. A sample guide that is mechanically separated from the sample holding surface is provided in the direction in which the displacement is to be suppressed, and the above-mentioned sample is subjected to the Bernoulli effect generated between the sample and the sample holding surface. A sample holding method characterized in that the sample is held in contact with a sample guide.

2. The sample holding method according to claim 1, wherein the holding of the sample by the sample guide holds the sample within a distance of about 2.5 or less from the sample holding surface.

3. If the sample is approximately disk-shaped and the diameter is D mm, the sample holding surface should be (D-8) mn! 2. The sample holding method according to claim 1, wherein the sample holding shape is a substantially disk shape having a diameter in a range of from (D + 4) mm to (D + 4) mm. The sample is held in contact with a sample guide that is mechanically separated from the sample holding surface using the Bernoulli effect generated by flowing a fluid between the sample to be held and the sample holding surface facing the sample. A method of rotating a sample, comprising rotating a sample guide and rotating the sample.

5. The method according to claim 4, wherein a fluid is jetted onto a surface of the sample guide, whereby the sample guide is rotationally driven while being supported in a non-contact manner with a rotating shaft and a rotating surface thereof. Sample rotation method.

Utilizes the Bernoulli effect generated by flowing a fluid between the sample to be held and the sample holding surface facing the sample, and contacts and holds the sample guide that is mechanically separated from the sample holding surface. Treated surface of the sample In the fluid treatment method, a fluid to be flowed to generate the Bernoulli effect is selected according to the treatment to be performed on the sample to be held, the sample is supported by the sample guide, and the surface of the sample is A fluid processing method comprising performing processing.

7. When the sample is substantially disk-shaped and has a diameter of D mm, the sample holding surface is formed in a substantially disk shape having a diameter in the range of (D-8) mm to (D + 4) mm. 7. The fluid treatment method according to claim 6, wherein: 8. In the sample holding device for holding the sample, utilizing the Bernoulli effect caused by flowing a fluid between the sample to be held and the sample holding surface facing the sample, the position of the sample with respect to the sample holding surface. A sample guide that is mechanically separated from the sample holding surface is provided in the direction in which the displacement is to be suppressed, and the sample is separated from the sample using the Bernoulli effect generated between the sample and the sample holding surface. A sample holding device that is held in contact with a guide.

9. The sample holding apparatus according to claim 8, wherein the sample guide has a tapered shape in which a distance from the sample holding surface in the center direction of the sample is reduced.

10. If the sample is approximately disk-shaped and the diameter is D mm, the sample holding surface should be (D-8) mn! 9. The sample holding device according to claim 8, wherein the sample holding device has a substantially disc shape having a diameter in a range of (D + 4) mm.

11. Using a Bernoulli effect generated by flowing a fluid between a sample to be held and a sample holding surface facing the sample, a sample holding device for holding the sample is used to flow the sample to the sample holding surface. a fluid supply means for supplying the fluid, wherein a plurality of fluid supply holes are provided in the sample holding surface, and the respective ejection forces of the fluid ejected from the respective fluid supply holes are applied to the center of rotation of the sample. About the same magnitude of moment, and the above injection force vector A fluid supply means having the plurality of fluid supply holes configured so that the sum of the torques is substantially zero; and A sample guide that is separated from the sample guide, and uses the Bernoulli effect generated between the sample and the sample holding surface to hold the sample in contact with the sample guide. .

1 2. If the fluid is a liquid, the sample guide is stored and the sample is held in a non-contact state. If the fluid is a gas, the sample guide appears and the sample is held in contact. The sample holding device according to claim 11, wherein:

13. In addition to the fluid supply holes, the fluid supplied from the fluid supply means along the direction substantially coincident with the normal direction of the surface of the sample is applied to the sample holding surface. 12. The sample holding device according to claim 11, further comprising a fluid supply hole for jetting to a surface. 1

4. The fluid supplied from the fluid supply means is provided on the sample holding surface along a direction in which a rotation force is applied to rotate the sample with the normal direction of the surface of the held sample as a rotation axis direction. 11. The sample holding device according to claim 11, wherein a fluid supply hole for ejecting the fluid to the surface of the sample is formed.

15. The sample holding surface is composed of a flat main surface that causes the Bernoulli effect and an outer peripheral portion surrounding the main surface where an air-liquid interface formed between the sample is located. 9. The sample holding device according to claim 8, wherein a distance from a surface of the sample at an outer peripheral end of the portion is greater than a distance from a surface of the sample at the main surface portion.

16. The outer peripheral portion has a tapered structure in which the distance from the surface of the sample increases toward the outer side. 16. The sample holding device according to claim 15, wherein

7. A pair of the sample holding surfaces is provided, and the pair of sample holding surfaces are arranged at positions opposing each other with a predetermined interval, and the sample guide is arranged in the gap to hold the sample. 9. The sample holding device according to claim 8, wherein:

8. The sample holding device according to claim 17, wherein a distance between the pair of sample holding surfaces is set to be a distance of approximately 2.5 mm or less.

9. Using the Bernoulli effect generated by flowing a fluid between the sample to be held and the sample holding surface facing the sample, the sample is placed in a sample guide that is mechanically separated from the sample holding surface. In a fluid treatment apparatus for treating the surface of a sample while being held in contact with the sample, a sample holding means having the sample holding surface formed thereon, and a fluid flowing between the sample holding surface and the sample, and a Bernoulli fluid A fluid supply unit that supplies a fluid that produces an effect and performs the treatment of the sample surface; a sample guide support unit that supports the sample guide; and a fluid supply unit that supplies a fluid that floats the sample guide. A fluid processing apparatus, comprising: a step; and a fluid supply means for supplying a fluid for rotating the sample guide.

0. When the sample is substantially disk-shaped and has a diameter of D mm, the sample holding surface is formed into a substantially disk shape having a diameter in the range of (D-8) mm to (D14) mm. The fluid treatment device according to claim 19, wherein the fluid treatment device is configured to:

1. A fluid supply hole for ejecting a fluid supplied from the fluid supply means to a surface of the sample is formed in a normal direction of the sample holding surface. 13. The fluid treatment device according to claim 10.

2. The normal direction of the surface of the held sample should be A fluid supply hole for ejecting a fluid supplied from the fluid supply means to the surface of the sample is formed along a direction of applying a rotational force for rotating the sample as a rotation axis direction. The fluid processing apparatus according to claim 19, wherein:

23. The sample support means is provided with a fluid supply hole for ejecting a fluid supplied from the fluid supply means to a surface of the sample guide along a direction in which the sample guide floats. The fluid treatment device according to claim 19, wherein the fluid treatment device is provided.

24. The sample guide supporting means is provided with the fluid supply means along a direction in which a rotational force is applied for rotating the sample with the normal direction of the surface of the held sample as a rotation axis direction. 10. The fluid processing apparatus according to claim 19, wherein a fluid supply hole for injecting a fluid supplied from the sample guide to a surface of the sample guide is formed.

25. The fluid supply means includes a liquid supply means for supplying a liquid used in a liquid processing step of the sample to be retained, a gas supply means for supplying a gas used in a gas processing step of the sample to be retained, and a sample. 20. The fluid processing apparatus according to claim 19, wherein at least one of fluid supply means for supplying a fluid for causing the held sample guide to float, rotate, and brake is included.

26. The fluid supply means includes a plurality of supply means for supplying fluids different from each other, and one of the plurality of supply means selected and selected according to a process to be performed on the sample. 20. The fluid processing apparatus according to claim 19, further comprising a selection unit that supplies a fluid from the two supply units.

27. The fluid supply means for raising, rotating, and braking the sample guide holding the sample includes a plurality of supply means. Selecting at least one of the plurality of supply means according to an operation to be performed on the guide and supplying a fluid from the selected supply means; 10. The fluid treatment apparatus according to item 19, wherein:

28. The plurality of supply means include a liquid supply means for supplying a liquid used in a liquid processing step of a sample to be retained, and a gas supply means for supplying gas used in a gas processing step of a sample to be retained. The liquid processing step may include at least a cleaning step using cleaning water, and the gas processing step may include at least a drying step using a drying gas or an etching step using an etching gas. Item 27. The fluid treatment apparatus according to Item 25.

9. The plurality of supply units include a gas supply unit that floats a sample guide that holds the sample, a gas supply unit that rotates a sample guide that holds the sample, and a sample that holds the sample. 26. The fluid treatment apparatus according to claim 25, further comprising at least gas supply means for braking the guide.

0. The liquid supply means supplies at least one of pure water and cleaning water, and the gas supply means supplies any one of nitrogen, hydrofluoric acid, and chlorine trifluoride gas. 29. The fluid treatment device according to claim 28, wherein the fluid treatment device is characterized in that:

1. A pair of the sample holding means is provided, and the sample holding surfaces formed on each of the pair of sample holding means are arranged at predetermined intervals at positions facing each other with the sample and the sample guide interposed therebetween. 20. The fluid processing apparatus according to claim 19, wherein the fluid processing apparatus is arranged so that the pair of sample holding means are supported by a support means.

2. Fluid supply for supplying fluid to each of the pair of sample holding means A pair of means are provided, and each of the fluid supply means is connected to each of the sample holding means in accordance with the processing performed on each of the sample holding faces opposed to the sample holding face formed on each of the sample holding means. The fluid processing apparatus according to claim 19, further comprising a selection unit that selects a fluid to be supplied.

3. In a fluid treatment method for treating a surface of a sample with a fluid, a fluid selected according to a process to be performed on the sample is transferred to a sample holding surface disposed at a position facing the sample and the sample. A fluid treatment method, comprising: holding the sample by performing a Bernoulli effect between the first and second surfaces, and performing the treatment of the sample surface.