+

WO1997015699B1 - Procede et appareil de depot de parylene af4 sur tranches de semi-conducteurs - Google Patents

Procede et appareil de depot de parylene af4 sur tranches de semi-conducteurs

Info

Publication number
WO1997015699B1
WO1997015699B1 PCT/US1996/017003 US9617003W WO9715699B1 WO 1997015699 B1 WO1997015699 B1 WO 1997015699B1 US 9617003 W US9617003 W US 9617003W WO 9715699 B1 WO9715699 B1 WO 9715699B1
Authority
WO
WIPO (PCT)
Prior art keywords
outlet
ofthe
deposition
chamber
pipe
Prior art date
Application number
PCT/US1996/017003
Other languages
English (en)
Other versions
WO1997015699A2 (fr
WO1997015699A3 (fr
Filing date
Publication date
Priority claimed from US08/549,087 external-priority patent/US5538758A/en
Priority claimed from US08/549,635 external-priority patent/US5536322A/en
Priority claimed from US08/549,169 external-priority patent/US5534068A/en
Priority claimed from US08/549,130 external-priority patent/US5556473A/en
Priority claimed from US08/549,131 external-priority patent/US5536321A/en
Priority claimed from US08/549,093 external-priority patent/US5536319A/en
Priority claimed from US08/549,395 external-priority patent/US5709753A/en
Priority claimed from US08/549,133 external-priority patent/US5536317A/en
Priority to AT96936895T priority Critical patent/ATE230445T1/de
Application filed filed Critical
Priority to DE69625615T priority patent/DE69625615T2/de
Priority to EP96936895A priority patent/EP0862664B1/fr
Priority to JP51675197A priority patent/JP3808102B2/ja
Publication of WO1997015699A2 publication Critical patent/WO1997015699A2/fr
Publication of WO1997015699A3 publication Critical patent/WO1997015699A3/fr
Publication of WO1997015699B1 publication Critical patent/WO1997015699B1/fr

Links

Abstract

Cette invention concerne un appareil de dépôt chimique en phase vapeur permettant un dépôt rapide et efficace de parylène AF4 sur des tranches de silicium lors de la fabrication de puces de semi-conducteur. L'invention concerne également un procédé de dépôt de parylène AF4 à la surface d'une tranche de semi-conducteur qui consiste à refroidir la tranche de microplaquette de semi-conducteur et à déposer des monomères de parylène à la surface de la tranche. Ledit procédé peut en outre consister à chauffer la tranche jusqu'à une température préétablie et/ou de recuit, et ultérieurement à la refroidir.
PCT/US1996/017003 1995-10-27 1996-10-25 Procede et appareil de depot de parylene af4 sur tranches de semi-conducteurs WO1997015699A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT96936895T ATE230445T1 (de) 1995-10-27 1996-10-25 Verfahren und vorrichtung zur ablagerung von parylen af4 auf halbleiterwafern
JP51675197A JP3808102B2 (ja) 1995-10-27 1996-10-25 半導体ウエハ上へのパリレンaf4の蒸着方法
EP96936895A EP0862664B1 (fr) 1995-10-27 1996-10-25 Procede et appareil de depot de parylene af4 sur tranches de semi-conducteurs
DE69625615T DE69625615T2 (de) 1995-10-27 1996-10-25 Verfahren und vorrichtung zur ablagerung von parylen af4 auf halbleiterwafern

Applications Claiming Priority (28)

Application Number Priority Date Filing Date Title
US08/549,395 US5709753A (en) 1995-10-27 1995-10-27 Parylene deposition apparatus including a heated and cooled dimer crucible
US08/549,133 US5536317A (en) 1995-10-27 1995-10-27 Parylene deposition apparatus including a quartz crystal thickness/rate controller
US08/549,635 US5536322A (en) 1995-10-27 1995-10-27 Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device
US08/549,093 US5536319A (en) 1995-10-27 1995-10-27 Parylene deposition apparatus including an atmospheric shroud and inert gas source
US08/549,087 US5538758A (en) 1995-10-27 1995-10-27 Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers
US08/549,131 US5536321A (en) 1995-10-27 1995-10-27 Parylene deposition apparatus including a post-pyrolysis filtering chamber and a deposition chamber inlet filter
US08/549,130 US5556473A (en) 1995-10-27 1995-10-27 Parylene deposition apparatus including dry vacuum pump system and downstream cold trap
US08/549,169 US5534068A (en) 1995-10-27 1995-10-27 Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement
US67982796A 1996-07-15 1996-07-15
US67995896A 1996-07-15 1996-07-15
US68000596A 1996-07-15 1996-07-15
US68016196A 1996-07-15 1996-07-15
US67995696A 1996-07-15 1996-07-15
US68357796A 1996-07-15 1996-07-15
US08/679,958 1996-07-15
US08/680,005 1996-07-15
US08/549,130 1996-07-15
US08/679,956 1996-07-15
US08/549,093 1996-07-15
US08/549,087 1996-07-15
US08/679,827 1996-07-15
US08/683,577 1996-07-15
US08/680,161 1996-07-15
US08/549,133 1996-07-15
US08/549,169 1996-07-15
US08/549,395 1996-07-15
US08/549,131 1996-07-15
US08/549,635 1996-07-15

Publications (3)

Publication Number Publication Date
WO1997015699A2 WO1997015699A2 (fr) 1997-05-01
WO1997015699A3 WO1997015699A3 (fr) 1997-09-12
WO1997015699B1 true WO1997015699B1 (fr) 1997-11-06

Family

ID=27585116

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/017003 WO1997015699A2 (fr) 1995-10-27 1996-10-25 Procede et appareil de depot de parylene af4 sur tranches de semi-conducteurs

Country Status (4)

Country Link
EP (1) EP0862664B1 (fr)
JP (1) JP3808102B2 (fr)
AT (1) ATE230445T1 (fr)
WO (1) WO1997015699A2 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6020458A (en) * 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6140456A (en) * 1997-10-24 2000-10-31 Quester Techology, Inc. Chemicals and processes for making fluorinated poly(para-xylylenes)
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
JP2002514004A (ja) 1998-05-01 2002-05-14 セシュー ビー デス 化学蒸着によって堆積された酸化物/有機ポリマー多層薄膜
US6495208B1 (en) 1999-09-09 2002-12-17 Virginia Tech Intellectual Properties, Inc. Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites
US7026052B2 (en) 2001-02-26 2006-04-11 Dielectric Systems, Inc. Porous low k(<2.0) thin film derived from homo-transport-polymerization
US6703462B2 (en) * 2001-08-09 2004-03-09 Dielectric Systems Inc. Stabilized polymer film and its manufacture
US6881447B2 (en) * 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
US7192645B2 (en) 2001-02-26 2007-03-20 Dielectric Systems, Inc. Porous low E (<2.0) thin films by transport co-polymerization
US6825303B2 (en) * 2001-02-26 2004-11-30 Dielectric Systems, Inc. Integration of low ε thin films and Ta into Cu dual damascene
US6797343B2 (en) 2001-12-20 2004-09-28 Dielectric Systems, Inc. Dielectric thin films from fluorinated precursors
RU2218364C2 (ru) * 2001-07-27 2003-12-10 Федеральное государственное унитарное предприятие "Научно-исследовательский физико-химический институт им. Л.Я. Карпова" ПЛЕНКА ИЗ ПОЛИ ( α,α,α′,α′- ТЕТРАФТОРПАРАКСИЛИЛЕНА), СПОСОБ ЕЕ ПОЛУЧЕНИЯ И ПОЛУПРОВОДНИКОВЫЙ ПРИБОР С ЕЕ ИСПОЛЬЗОВАНИЕМ
US7179283B2 (en) 2001-11-02 2007-02-20 Scimed Life Systems, Inc. Vapor deposition process for producing a stent-graft and a stent-graft produced therefrom
US6783598B2 (en) * 2002-08-15 2004-08-31 Fibersense Technology Corp. Moisture barrier sealing of fiber optic coils
US7309395B2 (en) 2004-03-31 2007-12-18 Dielectric Systems, Inc. System for forming composite polymer dielectric film
US7094661B2 (en) 2004-03-31 2006-08-22 Dielectric Systems, Inc. Single and dual damascene techniques utilizing composite polymer dielectric film
US6962871B2 (en) 2004-03-31 2005-11-08 Dielectric Systems, Inc. Composite polymer dielectric film
US20090142227A1 (en) * 2005-07-01 2009-06-04 Manfred Fuchs Parylene Coating and Method for the Production Thereof
US20070148390A1 (en) * 2005-12-27 2007-06-28 Specialty Coating Systems, Inc. Fluorinated coatings
CN101511903A (zh) * 2006-07-28 2009-08-19 第三化成株式会社 化学气相沉积装置及方法
DE102009003781A1 (de) 2008-06-03 2009-12-10 Aixtron Ag Verfahren zum Abscheiden eines dünnschichtigen Polymers in einer Niederdruckgasphase
RU2461429C2 (ru) * 2010-09-03 2012-09-20 Российская Федерация, от имени которой выступает Министерство образования и науки РФ (Минобрнаука РФ) Способ получения пленок полипараксилилена и его производных
US8816371B2 (en) * 2011-11-30 2014-08-26 Micron Technology, Inc. Coated color-converting particles and associated devices, systems, and methods
US10887371B2 (en) 2015-09-14 2021-01-05 Google Llc Systems and methods for content storage and retrieval
US11933942B2 (en) * 2019-03-25 2024-03-19 Applied Materials, Inc. Non-line-of-sight deposition of coating on internal components of assembled device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB650947A (en) * 1947-09-19 1951-03-07 Michael Mojzesz Szwarc The production of new polymers
US3246627A (en) * 1962-10-05 1966-04-19 Union Carbide Corp Apparatus for vapor deposition
US3301707A (en) * 1962-12-27 1967-01-31 Union Carbide Corp Thin film resistors and methods of making thereof
US3749601A (en) * 1971-04-01 1973-07-31 Hughes Aircraft Co Encapsulated packaged electronic assembly
US4110392A (en) * 1976-12-17 1978-08-29 W. L. Gore & Associates, Inc. Production of porous sintered PTFE products
US4184188A (en) * 1978-01-16 1980-01-15 Veeco Instruments Inc. Substrate clamping technique in IC fabrication processes
EP0075007A4 (fr) * 1981-03-11 1984-06-05 Chronar Corp Procede et dispositifs semi-conducteurs amorphes.
EP0102417A1 (fr) * 1982-08-24 1984-03-14 New-Come Filters Limited Dispositif de filtrage de gaz
US4577465A (en) * 1984-05-11 1986-03-25 Helix Technology Corporation Oil free vacuum system
DE3780511T2 (de) * 1986-05-23 1993-03-04 Gore & Ass Hochleistungsgasfilter.
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4990374A (en) * 1989-11-28 1991-02-05 Cvd Incorporated Selective area chemical vapor deposition
US5112642A (en) * 1990-03-30 1992-05-12 Leybold Inficon, Inc. Measuring and controlling deposition on a piezoelectric monitor crystal
US5268202A (en) * 1992-10-09 1993-12-07 Rensselaer Polytechnic Institute Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene
JP3319055B2 (ja) * 1993-08-06 2002-08-26 日新電機株式会社 水晶振動子式ラジカルビームモニタ
CA2147813A1 (fr) * 1994-04-28 1995-10-29 Richard Dixon Prothese intravasculaire a enrobage anti-thrombogenique
US5534068A (en) * 1995-10-27 1996-07-09 Specialty Coating Systems, Inc. Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement

Similar Documents

Publication Publication Date Title
WO1997015699B1 (fr) Procede et appareil de depot de parylene af4 sur tranches de semi-conducteurs
US5538758A (en) Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers
US5534068A (en) Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement
EP0862664B1 (fr) Procede et appareil de depot de parylene af4 sur tranches de semi-conducteurs
US7604042B2 (en) Cooling mechanism with coolant, and treatment device with cooling mechanism
US5383971A (en) Differential pressure CVD chuck
KR100330130B1 (ko) 열처리 방법 및 그 장치
CA1216419A (fr) Dispositif de deposition par voie de vapeurs chimiques
US20020153350A1 (en) Method for preventing contamination in a plasma process chamber
JP2000505152A (ja) 真空処理装置のための熱伝導性チャック
US20070224777A1 (en) Substrate Holder Having a Fluid Gap and Method of Fabricating the Substrate Holder
CA2202074A1 (fr) Procede et appareil pour isoler un element chauffant de suscepteur d&#39;un milieu de depot chimique en phase vapeur
JPH0594950A (ja) 反応室の設計及び化学蒸着反応器における粒子発生を最小限にする方法
US20040007186A1 (en) Heat-treating device
JP2000070664A (ja) 加熱型トラップ装置および成膜装置
KR100820527B1 (ko) 대기로부터 다중 영역 히터를 격리하는 방법
US6080444A (en) CVD film forming method including annealing and film forming performed at substantially the same pressure
TW202100789A (zh) 基板處理裝置之控制方法及基板處理裝置
US6106628A (en) Heater unit for chemical vapor deposition systems
US20030015142A1 (en) Apparatus for fabricating a semiconductor device
EP1357582B1 (fr) Dispositif de traitement thermique
JP4576230B2 (ja) 基板処理装置
JP3675065B2 (ja) ドライエッチング方法
EP1118102B1 (fr) Appareil basse pression et soupape de regulation de pression
JP3098093B2 (ja) 化学気相成長装置
点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载