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WO1997015066A2 - Procede de fabrication d'un capteur de vitesses de rotation a effet de coriolis - Google Patents

Procede de fabrication d'un capteur de vitesses de rotation a effet de coriolis Download PDF

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Publication number
WO1997015066A2
WO1997015066A2 PCT/DE1996/001969 DE9601969W WO9715066A2 WO 1997015066 A2 WO1997015066 A2 WO 1997015066A2 DE 9601969 W DE9601969 W DE 9601969W WO 9715066 A2 WO9715066 A2 WO 9715066A2
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
etching
rate sensor
projections
rotation rate
Prior art date
Application number
PCT/DE1996/001969
Other languages
German (de)
English (en)
Other versions
WO1997015066A3 (fr
Inventor
Horst Muenzel
Franz LÄRMER
Michael Offenberg
Andrea Schilp
Markus Lutz
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Priority to DE59605992T priority Critical patent/DE59605992D1/de
Priority to EP96945505A priority patent/EP0856143B1/fr
Priority to JP9515420A priority patent/JPH11513844A/ja
Priority to US09/051,878 priority patent/US6214243B1/en
Priority to KR1019980702860A priority patent/KR19990066938A/ko
Publication of WO1997015066A2 publication Critical patent/WO1997015066A2/fr
Publication of WO1997015066A3 publication Critical patent/WO1997015066A3/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G01C19/5733—Structural details or topology
    • G01C19/574—Structural details or topology the devices having two sensing masses in anti-phase motion
    • G01C19/5747—Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G01C19/5769—Manufacturing; Mounting; Housings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/05—Type of movement
    • B81B2203/058—Rotation out of a plane parallel to the substrate

Definitions

  • the invention relates to a method for producing a Coriolis yaw rate sensor, according to the preamble of claim 1.
  • Sensors designed as Coriolis rotation rate sensors are known per se. These have deflectable oscillating masses which are suspended from a substrate and carry evaluation means for detecting Coriolis accelerations.
  • the method according to the invention with the features mentioned in claim 1 offers the advantage that the vibrating support structures which carry the acceleration sensors for measuring the Coriolis acceleration can be structured simply and precisely.
  • the etching process stops automatically on the buried oxide, both the wet etching step from the back of the wafer and the plasma etching step from the front of the wafer, so that the set structure heights are determined exclusively by the thickness of the SOI layer.
  • the etching processes simultaneously protect the underside of the structure during the plasma etching process. Otherwise, after the membrane windows had been etched through in the plasma by etching gases (fluorine radicals) which reach around the edges, the underside of the structure would be attacked.
  • etching gases fluorine radicals
  • the membranes can very advantageously only be produced subsequently - as the last step - by means of a wet or dry etching process from the back of the wafer, the buried oxide - as mentioned - taking on a seal from the ready-structured structured front of the wafer.
  • the front of the wafer is sealed to the back of the wafer, which can be supported by an additional front coating.
  • the buried oxide can be removed very easily on the carrier structures during the sacrificial layer etching of the Coriolis accelerometer without additional effort.
  • a very compact support structure for a rotation rate sensor with integrated overload stops can be structured in a simple manner from the front of the wafer by means of a plasma depth etching process.
  • FIG. 1 shows a schematic plan view of a carrier structure of a rotation rate sensor
  • FIG. 2 shows a sectional illustration through the rotation rate sensor according to FIG. 1;
  • Figure optional additional method steps 6a and 6b to create the structures according to a further embodiment
  • Figure 7 is a schematic top view of a
  • FIG. 8 shows a partial sectional view through the rotation rate sensor according to FIG. 7.
  • FIG. 1 shows a plan view of a rotation rate sensor 10.
  • the rotation rate sensor 10 has two oscillation masses 12 or 14.
  • the vibrating masses 12 and 14 are connected to a base (substrate) 18 via springs 16.
  • the springs 16 have a high aspect ratio, that is to say their height is as large as possible in relation to their thickness.
  • the springs 16 are thus designed to be soft in a planar vibration plane and stiff perpendicular to the planar vibration plane.
  • the vibration masses 12 and 14, which at the same time carry acceleration sensors 15 for the verification of acceleration, are thus suspended softly in the planar vibration plane and stiffly perpendicular to the planar vibration plane.
  • the vibrating masses 12 and 14 can each have comb structures 20 or 22 for an electrostatic vibration application.
  • the comb structures 20 and 22 each have a comb 26 which is fixedly connected to the oscillating dimensions 12 or 14 and a comb 28 which is in engagement with the comb 26 and which is connected to the base 18.
  • the comb 28 is fastened to a base 30, which is arranged in a recess 32 of the base 18.
  • the arrangement of the base 30 in the recess 32 surrounds it with a trench-shaped structure 34 and laterally electrolyzes it; The vertical insulation takes over the buried oxide of the SOI wafer structure.
  • the Schwingma ⁇ en 12 and 14 also have on their end faces finger-shaped projections 36 which engage in recesses 38 of the base 18.
  • the projections 36 engaging in the recesses 38 are surrounded by a trench-shaped structure 40.
  • the bases 30 have a firm, electrically insulating connection to the base 18 on their underside, while the projections 36 project freely into the recesses 38 after the processing, that is to say the sacrificial oxide etching, has ended no longer have a connection with the base 18.
  • the recesses 32 and 38 start from an opening 42 within which the oscillating masses 12 and 14 and the springs 16 are arranged.
  • the surfaces of the base 18 and the oscillating masses 12 and 14, the comb structures 20 and 22 and the projections 36 lie approximately on a planar plane.
  • the carrier structure shown in FIG. 1 serves to generate Coriolis accelerations, which are detected by the additionally applied OMM (surface micromechanics) acceleration sensors 15.
  • OMM surface micromechanics
  • the oscillating masses 12 and 14 are set into a planar oscillating movement by applying an electrical alternating voltage by means of electrostatic forces.
  • other types of drive are also conceivable, for example electromagnetically by means of the Lorenz force on a conductor through which current flows in the magnetic field.
  • the mode of operation of the rotation rate sensor 10 should not be discussed further, since this is generally known.
  • the projections 36 engaging in the recesses 38 serve to limit the vertical movement of the oscillating masses 12 or 14. This forms lower stops for the oscillating masses 12 and 14, which form an overload / shock protection.
  • FIG. 2 shows a cross section through the rotation rate sensor 10.
  • the same parts as in Figure 1 are provided with the same reference numerals and not explained again.
  • the layered structure of the rotation rate sensor 10 is clear from the cross section.
  • the rotation rate sensor 10 has a bulk substrate 44 on which a silicon oxide layer (SiO 2) is formed as the lower buried oxide 46.
  • An SOI layer 48 is provided on the buried oxide 46, which is followed by an EpiPoly layer 50.
  • BAD ORIGINAL Bulk substrate 44 has the opening 42, which is covered by the SOI layer 48 and the EpiPoly layer 50 like a membrane.
  • the oscillating dimensions 12 and 14, the springs 16, the comb structures 20 and 22, the base 30, the projections 36 and the recesses 32 and 38 are structured.
  • the boundary between the bulk substrate 44 and the structural elements of the rotation rate sensor 10 is formed by the lower buried oxide 46.
  • the yaw rate sensor 10 is divided by the lower buried oxide 46 into a wafer rear side 52 and a wafer front side 54.
  • the oscillating masses 12 and 14 and the springs 16 can consist of the relatively thick SOI layer 48, on which an upper silicon oxide layer is structured as an upper buried oxide 56.
  • the acceleration sensors 15 are applied to the upper buried oxide 56 using EpiPoly technology.
  • the vibrating masses 12 and 14 are thus formed by a carrier structure made of the SOI layer 48 and the acceleration sensors 15 arranged thereon.
  • the acceleration sensors 15 instead of forming the acceleration sensors 15 from EpiPoly, these are also structured using SOI technology (SOI 2 approach).
  • SOI 2 approach SOI technology
  • the buried oxide layers 46 and 56 can be produced in a generally known manner by means of thermal oxidation and subsequent bonding and grinding or bonding and etching back processes.
  • FIGS. 3a and 3b The manufacture of the rotation rate sensor 10 in a first embodiment is explained with reference to FIGS. 3a and 3b.
  • an SOI wafer 60 with a buried oxide layer 46 is assumed.
  • Wet chemical etching takes place from the back of the wafer 52.
  • the wet etching medium (potassium hydroxide solution) is brought up to the back of the wafer 52 via a mask (not shown here), so that the V-shaped opening 62 results due to the crystal structure of the silicon wafer 60.
  • the buried oxide 46 is resistant to the etching medium used (hot alkali) and thus serves as an etching stop for the wet etching process.
  • this defined etching stop for the wet etching process ensures that the membrane (SOI layer 48) remaining on the wafer front side 54, in which the support structure of the rotation rate sensor 10 is later structured, has a defined thickness which is exclusively dependent on the thickness of the SOI Layer 48 is determined.
  • the thickness of the layer 48 is thus independent of the etching time with which the opening 62 is etched from the rear side 52 of the wafer.
  • the Buried oxide 46 simultaneously forms a protective layer for the front side 54 of the wafer in front of the etching media, for example KOH, hydrofluoric acid + HNO3 or plasma etching gases TMAH (tetramethylammonium hydroxide).
  • the acceleration sensors 15 (not shown here) (FIG. 2) are also applied to the carrier structure.
  • an anisotropic plasma depth etching process is carried out on the front side 54 of the wafer.
  • BAD o n ⁇ lNAL ß a mask (not shown), for example a photoresist, is applied to the front of the wafer 54, the masking corresponding to the later structuring of the rotation rate sensor 10.
  • the geometry of the vibrating masses 12 and 14, the comb structures 20 and 22, the base 30, the projections 36, the recesses 32 and 38 and the springs 16 (FIG. 1) is thus determined via the masking.
  • the non-masked areas are removed from the SOI layer 48 by the beginning plasma deep etching.
  • the buried oxide 46 in turn serves as a stop for this plasma depth etching process from the front side 54 of the wafer.
  • the buried oxide layer 46 can finally be removed in the regions in which, according to the sectional illustration shown in FIG. 2, the freely oscillating structures of the rotation rate sensor 10 are provided. Overall, a yaw rate sensor 10 can thus be structured in a simple manner.
  • the projections 36 shown in FIG. 1 can be structured, which form an overload / shock protection for the rotation rate sensor 10.
  • the trench-shaped structures 40 (FIG. 1) are also etched out, so that the projections 36 are formed, these being formed in one piece with the oscillating masses 12 or 14.
  • the projections 36 can thus be obtained from the already existing structure of the wafer 60 without complex additional measures. Since the projections 36 with
  • BATH ORIGINAL J> resonate with the vibrating masses 12 and 14, they must have no connection to the bulk substrate 44.
  • an exposure that is to say a detachment of the projections 36 from the bulk substrate 44 by undercutting the buried oxide 46 in the region of the projections 36, must take place later. This also takes place without additional effort during the sacrificial oxide etching of the OMM accelerometers 15.
  • a distance of approximately 1 to 3 ⁇ m can be created here. This will generally suffice to allow the support structure 12, 14 to swing freely.
  • the distance between the projections 36 and the bulk substrate 44 can be shown by an isotropic plasma underetching according to FIGS. 5c and 5b the projections 36 in the bulk substrate 44 are enlarged.
  • the side walls of the trench trenches 64 created in this special case the trench trenches 64 which later result in the trench-shaped structure 40, are passivated with respect to an isotropically attacking slide media.
  • the side walls can, for example, be provided with a Teflon-like plasma film 66.
  • isotropic plasma underetching takes place in the bulk substrate 44, so that free spaces 68 are created there.
  • the free spaces 68 each connect two adjacent trench trenches 64, so that the area 70 remaining between the trench trenches 64, in the example chosen the projections 36, no longer have any contact with the bulk substrate 44.
  • an anodic voltage 70 can be applied to the bulk substrate 44 in accordance with the method steps illustrated in FIGS. 6a and 6b after the plasma etching of the trench trenches 64 and the removal of the buried oxide 46 at the base of the trench trenches 64.
  • An electrolyte 72 for example aqueous hydrofluoric acid and isopropanol, is applied to the exposed surface of the bulk substrate 44 in the trench trenches 64. This results in an electrochemical dissolution of areas of the bulk substrate 44, which also lead to
  • FIGS. 7 and 8 show a further exemplary embodiment of a rotation rate sensor 10, the same parts as in the previous figures being provided with the same reference symbols and not being explained again.
  • an upper stop 74 is provided here, which engages over the projections 36.
  • the upper stop 74 is achieved by etching off the projections 36 up to the upper buried oxide 56 (FIG. 6). This etching can very advantageously be carried out simultaneously with the plasma depth etching process for forming the structures of the upper acceleration sensors 15 (trench trenches 64 according to FIGS. 3 and 4) and does not require an additional process step.
  • the buried oxide can either be suitably pre-structured before deposition of the thick poly layer, or it is etched through during the deep trench process to etch the vibrating carrier structure by changing the etching plasma chemistry to an oxide etching chemistry, which is particularly advantageous in the SOI 5 process is.
  • EpiPoly or upper SOI for example 12 ⁇ m
  • bridge-shaped stops 74 are produced over the projections 36 in such a way that they deflect upward by the thickness of the upper epipoly or SOI layer on the underside of the stops 74 when deflected upward.
  • the fixed resistance can either be pre-structured photolithographically before lamination and then applied in an adjusted manner, or the application and subsequent photolithography of the fixed resist takes place entirely.
  • the stops 74 can be generated, for example, in such a way that a closed feed-resist frame 76 encloses the entire sensor structure, as is shown schematically in FIG.
  • a cap to the base 18, for example by gluing or soldering, so that the cap edge covers the stops 36 in such a way that the corresponding stop effect occurs.
  • the edge of the cap thus corresponds to the overlapping fixed-resistance frame 74, 76.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Gyroscopes (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un capteur de vitesses de rotation à effet de Coriolis avec des masses oscillantes de support élastiquement suspendues à un substrat, des moyens d'entraînement qui transmettent une oscillation planar aux masses de support et des moyens d'évaluation qui détectent une accélération de Coriolis. Les masses oscillantes de support (12, 14), ainsi que les moyens d'entraînement (20) et les butées intégrées (36, 38), sont structurés en une seule étape d'attaque au plasma dans une tranche de type silicium sur isolant.
PCT/DE1996/001969 1995-10-20 1996-10-17 Procede de fabrication d'un capteur de vitesses de rotation a effet de coriolis WO1997015066A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE59605992T DE59605992D1 (de) 1995-10-20 1996-10-17 Verfahren zur herstellung eines coriolis-drehratensensors
EP96945505A EP0856143B1 (fr) 1995-10-20 1996-10-17 Procede de fabrication d'un capteur de vitesses de rotation a effet de coriolis
JP9515420A JPH11513844A (ja) 1995-10-20 1996-10-17 コリオリ回転速度センサの製造方法
US09/051,878 US6214243B1 (en) 1995-10-20 1996-10-17 Process for producing a speed of rotation coriolis sensor
KR1019980702860A KR19990066938A (ko) 1995-10-20 1996-10-17 코리올리 회전속도 센서의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19539049.0 1995-10-20
DE19539049A DE19539049A1 (de) 1995-10-20 1995-10-20 Verfahren zur Herstellung eines Coriolis-Drehratensensors

Publications (2)

Publication Number Publication Date
WO1997015066A2 true WO1997015066A2 (fr) 1997-04-24
WO1997015066A3 WO1997015066A3 (fr) 1997-06-12

Family

ID=7775319

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1996/001969 WO1997015066A2 (fr) 1995-10-20 1996-10-17 Procede de fabrication d'un capteur de vitesses de rotation a effet de coriolis

Country Status (6)

Country Link
US (1) US6214243B1 (fr)
EP (1) EP0856143B1 (fr)
JP (1) JPH11513844A (fr)
KR (1) KR19990066938A (fr)
DE (2) DE19539049A1 (fr)
WO (1) WO1997015066A2 (fr)

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US6928872B2 (en) 2001-04-27 2005-08-16 Stmicroelectronics S.R.L. Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane
WO2004016547A1 (fr) * 2002-08-02 2004-02-26 Robert Bosch Gmbh Procede pour fabriquer un dispositif micromecanique, notamment un miroir oscillant micromecanique
US7261825B2 (en) 2002-08-02 2007-08-28 Robert Bosch Gmbh Method for the production of a micromechanical device, particularly a micromechanical oscillating mirror device

Also Published As

Publication number Publication date
KR19990066938A (ko) 1999-08-16
EP0856143A2 (fr) 1998-08-05
US6214243B1 (en) 2001-04-10
WO1997015066A3 (fr) 1997-06-12
DE19539049A1 (de) 1997-04-24
EP0856143B1 (fr) 2000-10-11
DE59605992D1 (de) 2000-11-16
JPH11513844A (ja) 1999-11-24

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