WO1997013274A1 - A support for electronic components - Google Patents
A support for electronic components Download PDFInfo
- Publication number
- WO1997013274A1 WO1997013274A1 PCT/GB1996/002259 GB9602259W WO9713274A1 WO 1997013274 A1 WO1997013274 A1 WO 1997013274A1 GB 9602259 W GB9602259 W GB 9602259W WO 9713274 A1 WO9713274 A1 WO 9713274A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- support
- layer
- ceramic
- dispersion
- substrate
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 239000006185 dispersion Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000007751 thermal spraying Methods 0.000 claims abstract description 8
- 239000000945 filler Substances 0.000 claims abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- 239000011156 metal matrix composite Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 36
- 239000011247 coating layer Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 229910001593 boehmite Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000012700 ceramic precursor Substances 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009996 mechanical pre-treatment Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
Definitions
- the invention relates to a support for electronic components comprising an electrically isolating layer on a substrate and to a method of manufacturing such a suppor .
- Metal matrix composites such as may be manufactured in accordance with the metnods described m patent application No. 96 11358.4, are particularly suitable as substrates. In addition to meeting the above mentioned requirements they have the further advantage of low density. However, being electrically conducting, it is necessary that they are provided with a thm electrically isolating layer between the surface of the substrate and semiconductor devices mounted thereon. Such an electrically isolating layer has to be capable of providing effective isolation which will not break down under the stress of the electrical voltages which may appear m use on the semiconductor devices.
- electrically isolating layers comprise a ceramic such as alumina coated on to a substrate by a thermal spraying process such as plasma spraying or a high velocity oxyfuel process. The thickness of the ceramic coating is a compromise between the breakdown voltage which increases with increasing thickness and the desirability for a th coating to minimise thermal impedance between the electrical device and the heat sink.
- the invention provides, in one of its aspects, a support for electronic components comprising a substrate, an electrically isolating ceramic iayei applied to the substrate by a thermal spraying process, voids at least at the exposed surface of the thermally sprayed ceramic layer having been sealed by the application thereto of a fine dispersion of a filler material heat treated to consolidate the filler material and the thermally sprayed ceramic layer.
- the substrate comprises a metal matrix composite, preferably comprising a matrix of aluminium or aluminium alloy reinforced with particulate silicon carbide.
- the said dispersion may conveniently comprise a fine dispersion of a polymeric plastics material or a precursor for a polymer or a polymeric ceramic material, which case the heat treatment is such as to polymerise the precursor.
- the isolation layer will usually be required to withstand relatively high temperatures both further fabrication steps and use.
- the said dispersion comprises a fine dispersion of a ceramic, a glass or a precursor for a ceramic or a glass and the heat treatment is carried out at a temperature which sinters the finely dispersed ceramic or fuses the glass as the case may be or converts the precursor to consolidated ceramic or fused glass.
- the invention provides, in another of its aspects, a method of fabricating a support as aforesaid, which method comprises the steps of
- fine dispersion we mean a dispersion of particles a sufficient proportion of which are small enough to enter into and fill up voids in the layer formed by the thermal spraying process.
- the said dispersion may comprise a solution or sol of the said precursor.
- Figure 1 is a diagrammatic part cross sectional view of a support illustrating a stage in the process of the method
- Figure 2 is a similar cross sectional view at a later cage the process.
- suostrate 11 is a metal matrix composite comprising a matrix of aluminium or aluminium alloy reinforced with particulate silicon carbide and made by the method of our patent application No. 96 11358.4.
- Such composite is an excellent material for the production of packages for power handling semiconductors by virtue of its low mass, high thermal conductivity and low thermal expansion coefficient.
- the thermal expansion coefficient in particular can be closely matched to that of alumina semiconductor substrates for improving overall device reliability during thermal cycling.
- An electrically isolating layer on substrate 11 is formed by a three step process, the first step of which is illustrated in Figure 1 which shows a layer 12 of ceramic, alumina in this example, which has been applied by air plasma spraying.
- a layer is porous containing numerous voids such as 13 which may include so called pin-hole voids.
- adhesion of the layer 12 to the substrate 11 may be enhanced by Known chemical or mechanical pre-treatments of the substrate surface prior to theim ⁇ -- spraying.
- a dispersion of a chemical precursor to a ceramic is then applied to the layer 12.
- the dispersion is a boehmite sol, being a precursor for alumina.
- the dispersion is infiltrated mto the voids in the layer 12.
- This infiltration may be achieved by simple dipping relying upon capillary action to fill the voids.
- a forced flow can be provided by a vacuum impregnation. Excess material is wiped from the coat g surface by a doctor blade or absorbent wiper.
- the infiltrated coating is then baked at 300 - 400°C in order to convert the precursor to ceramic (alumina in the case of boehmite sol precursor) .
- Figure 2 illustrates the final product with a thm surface layer of coat g shown at 14.
- the following table shows experimental measurements made on two samples with a plasma sprayed layer 12 of alumina of respectively 60 microns and 210 microns thickness.
- the table shows a series of readings of measured breakdown voltage using A) an indium foil contact and E) a direct surface measurement. All measurements are in kilovolts and for each sample, a series of measurements is shown for the stage illustrated m Figure 1 prior to any application of the sealing coatmg 14 and a correspondmg series of measurements for the final product as illustrated in Figure 2 (columns marked + ⁇ mpregnat ⁇ on) . Averages of the five readings are shown in the final ro.'. All values Al_O j Al 0, Al 0, AIA in KV 80 ⁇ m SO ⁇ m + 210 ⁇ m 210 ⁇ m +
- the isolation layer made according to the foregomg example is readily treated by masking and thermal spraying for depositing circuit tracking on the isolation layer.
- selective electropla ing can be used to provide the tracking.
- Boehmite sol of available commercial and custom manufactured grades has been found to be particularly suitable as mfiltrant precursor.
- other dispersions may be used and, dependmg upon the typical size of voids in the layer 12, may comprise a salt in solution or a sol having particle size up to 100 angstrom units. Desirable features for the dispersion are that it has a high concentration of the precursor and that the particle size is fine enough to achieve effective penetration of the pores in layer 12. It is important that the temperature required to convert the precursor to ceramic i ⁇ as low as practicable to avoid damage to the sues- race during tne baking step.
- the dispersion may mclude wetting and dispersion agents to improve concentration and flow properties.
- Alumina is particularly suitable as the ceramic for the first layer 12, but other ceramics may be utilised and the most appropriate thermal spraying process adopted for the deposition. Thus, we used air plasma sprayed alumina, but low pressure plasma spraying is also suitable.
- a high velocity oxyfuel technique can be used to apply a ceramic layer of, for example, mullite, cordierite or zirconia.
- An alumina sol or s-.lic ⁇ n sol is particularly suitable for forming the sealing layer 14.
- other dispersions of ceramic precursors may be used.
- sealing layer of polymeric material or of glass rather than ceramic is readily achieved by appropriate selection of precursor.
- Application of ultrasound to the substrate durmg infiltration may be use ⁇ to improve the penetration of the fine dispersion into the first ceramic layer.
- masking may be used to control the deposition upon the substrate of the first ceramic layer, the secondary sealing coat g, or both.
- the manufacturing process described integrates effectively with the substrate fabrication process leading to a low overall system cost and good system performance as compared with conventional methods of achieving electrical isolation.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
A support for electronic components comprises a substrate (11) which is provided with an electrically isolating coating layer by applying a first ceramic layer (12) by a thermal spraying process. Voids (13) in the first ceramic layer are sealed by applying a fine dispersion of a filler material, and heat treating to consolidate the sealed isolating layer (12, 14).
Description
A Support for Electronic Components
The invention relates to a support for electronic components comprising an electrically isolating layer on a substrate and to a method of manufacturing such a suppor .
In the development of substrates which provide a mounting support and protection for semiconductor devices, there is a need foi a combination of strength, good theimal conductivity and compatibility in a number of respects, including coefficient of thermal expansion, with the material of semiconductor devices mounted on the substrate.
Metal matrix composites, such as may be manufactured in accordance with the metnods described m patent application No. 96 11358.4, are particularly suitable as substrates. In addition to meeting the above mentioned requirements they have the further advantage of low density. However, being electrically conducting, it is necessary that they are provided with a thm electrically isolating layer between the surface of the substrate and semiconductor devices mounted thereon. Such an electrically isolating layer has to be capable of providing effective isolation which will not break down under the stress of the electrical voltages which may appear m use on the semiconductor devices. Typically, such electrically isolating layers comprise a ceramic such as alumina coated on to a substrate by a thermal spraying process such as plasma spraying or a high velocity oxyfuel process. The thickness of the ceramic coating is a compromise between the breakdown voltage which increases with increasing thickness and the desirability for a th coating to minimise thermal
impedance between the electrical device and the heat sink.
We have found that the electrical isolation performance of a coating can be improved by applying a secondary coating which fills and seals up voids in the first ceramic layer. We have found that voids (also known as "pin-holes") m the layer offer easier breakdown paths than solid material, so that breakdown resistance is improved by filling such voids m a secondary sealing operation.
The invention provides, in one of its aspects, a support for electronic components comprising a substrate, an electrically isolating ceramic iayei applied to the substrate by a thermal spraying process, voids at least at the exposed surface of the thermally sprayed ceramic layer having been sealed by the application thereto of a fine dispersion of a filler material heat treated to consolidate the filler material and the thermally sprayed ceramic layer.
Preferably the substrate comprises a metal matrix composite, preferably comprising a matrix of aluminium or aluminium alloy reinforced with particulate silicon carbide.
Provided it will withstand subsequent exposure to levels of heat required for further steps in the fabrication process and use, the said dispersion may conveniently comprise a fine dispersion of a polymeric plastics material or a precursor for a polymer or a polymeric ceramic material, which case the heat treatment is such as to polymerise the precursor.
However the isolation layer will usually be required to withstand relatively high temperatures both further fabrication steps and use. Accordingly it is preferred that the said dispersion comprises a fine dispersion of a ceramic, a glass or a precursor for a ceramic or a glass and the heat treatment is carried out at a temperature which sinters the finely dispersed ceramic or fuses the glass as the case may be or converts the precursor to consolidated ceramic or fused glass.
The invention provides, in another of its aspects, a method of fabricating a support as aforesaid, which method comprises the steps of
l) applying on a substrate a first electrically isolating layer of ceramic by a thermal spraying process,
ii) sealing voids in the said first ceramic layer by applying thereto a fine dispersion of a filler material, and
m) heat treatmg to consolidate the sealed electrically isolating layer.
By fine dispersion we mean a dispersion of particles a sufficient proportion of which are small enough to enter into and fill up voids in the layer formed by the thermal spraying process. For this, the said dispersion may comprise a solution or sol of the said precursor.
It will usually be desirable to build up the density of the sealing layer by repeating the steps ii) and in) above. We have found that three such treatment cycles are desirable for achieving significant improvement in the electrical isolation, but the improvement may
continue with additional treatment cycles, as many as ten having proved appropriate in certain circumstances.
A specific example of support and method embodying the invention will now be described by way of example and with reference to the drawings filed herewith, in which:
Figure 1 is a diagrammatic part cross sectional view of a support illustrating a stage in the process of the method, and
Figure 2 is a similar cross sectional view at a later cage the process.
In this example, suostrate 11 is a metal matrix composite comprising a matrix of aluminium or aluminium alloy reinforced with particulate silicon carbide and made by the method of our patent application No. 96 11358.4. Such composite is an excellent material for the production of packages for power handling semiconductors by virtue of its low mass, high thermal conductivity and low thermal expansion coefficient. The thermal expansion coefficient in particular can be closely matched to that of alumina semiconductor substrates for improving overall device reliability during thermal cycling.
An electrically isolating layer on substrate 11 is formed by a three step process, the first step of which is illustrated in Figure 1 which shows a layer 12 of ceramic, alumina in this example, which has been applied by air plasma spraying. Such a layer is porous containing numerous voids such as 13 which may include so called pin-hole voids. adhesion of the layer 12 to the substrate 11 may be enhanced by Known chemical or mechanical pre-treatments of the substrate surface prior to theim^-- spraying.
A dispersion of a chemical precursor to a ceramic is then applied to the layer 12. In this example, the dispersion is a boehmite sol, being a precursor for alumina. The dispersion is infiltrated mto the voids in the layer 12. This infiltration may be achieved by simple dipping relying upon capillary action to fill the voids. Alternatively a forced flow can be provided by a vacuum impregnation. Excess material is wiped from the coat g surface by a doctor blade or absorbent wiper.
The infiltrated coating is then baked at 300 - 400°C in order to convert the precursor to ceramic (alumina in the case of boehmite sol precursor) .
These steps of lrriltration and baking are repeated until a desired level of coating density is achieved. Figure 2 illustrates the final product with a thm surface layer of coat g shown at 14.
The following table shows experimental measurements made on two samples with a plasma sprayed layer 12 of alumina of respectively 60 microns and 210 microns thickness. For each example, the table shows a series of readings of measured breakdown voltage using A) an indium foil contact and E) a direct surface measurement. All measurements are in kilovolts and for each sample, a series of measurements is shown for the stage illustrated m Figure 1 prior to any application of the sealing coatmg 14 and a correspondmg series of measurements for the final product as illustrated in Figure 2 (columns marked +ιmpregnatιon) . Averages of the five readings are shown in the final ro.'.
All values Al_Oj Al 0, Al 0, AIA in KV 80μm SOμm + 210μm 210μm +
Impregnacion Impregnation
Reading A B L B A B A B
1 2.3 1.4 4 0 5 5 4.1 2.8 7.0 10.0
2 1.7 1.5 4 5 5.5 4.5 2.6 9.0 11.5
3 1.8 1.5 4 C 5 0 2.S 2.8 11.0 12.0
4 2.0 1.4 4 0 5 0 4.5 2.5 9.0 9.0
5 2.0 1.5 4.5 6.0 4.0 2.9 8.5 13.5
Avg 1.96 1.46 4 20 5 40 3.98 2.72 8.9 11 2
In addition to the improvement in breakdown voltage illustrated by these results, we have found that for a given thickness of isolation layer the application of a secondary sealing coatirg improves the thermal conductivity of the layer, reduces surface roughness and can increase surface hardness.
The isolation layer made according to the foregomg example is readily treated by masking and thermal spraying for depositing circuit tracking on the isolation layer. Alternatively selective electropla ing can be used to provide the tracking.
The invention is net restricted to the details of the foregomg examples. Boehmite sol of available commercial and custom manufactured grades has been found to be particularly suitable as mfiltrant precursor. However, other dispersions may be used and, dependmg upon the typical size of voids in the layer 12, may comprise a salt in solution or a sol having particle size up to 100 angstrom units. Desirable features for the dispersion are that it has a high concentration of the precursor and that the particle size is fine enough to achieve effective penetration of the pores in layer 12. It is important that the temperature required to convert the precursor to ceramic i≤ as low as practicable to avoid damage to the sues- race during tne baking step.
The dispersion may mclude wetting and dispersion agents to improve concentration and flow properties.
Alumina is particularly suitable as the ceramic for the first layer 12, but other ceramics may be utilised and the most appropriate thermal spraying process adopted for the deposition. Thus, we used air plasma sprayed alumina, but low pressure plasma spraying is also suitable. A high velocity oxyfuel technique can be used to apply a ceramic layer of, for example, mullite, cordierite or zirconia.
An alumina sol or s-.lic<n sol is particularly suitable for forming the sealing layer 14. However, other dispersions of ceramic precursors may be used.
It will be appreciated that a sealing layer of polymeric material or of glass rather than ceramic is readily achieved by appropriate selection of precursor.
Application of ultrasound to the substrate durmg infiltration may be useα to improve the penetration of the fine dispersion into the first ceramic layer.
If required, masking may be used to control the deposition upon the substrate of the first ceramic layer, the secondary sealing coat g, or both.
The manufacturing process described integrates effectively with the substrate fabrication process leading to a low overall system cost and good system performance as compared with conventional methods of achieving electrical isolation.
Claims
1. A support for electronic components comprising a substrate (11) , an electrically isolating ceramic layer (12) applied to the substrate (11) by a thermal spraying process, characterised m that voids (13) at least at the exposed surface of the thermally sprayed layer (12) have been sealed by the application thereto of a fine dispersion of a filler material (14) heat treated to consolidate the filler material (14) and the thermally sprayed ceramic layer (12) .
2. A support as claimed in Claim 1, further characterised in that the substrate (11) comprises a metal matrix composite.
3. A support as claimed in Claim 2, further characterised in that the metal matrix composite (11) comprises a matrix of aluminium or aluminium alloy reinforced with particulate silicon carbide.
4. A support as claimed in any one of Claims 1 to 3 , further characterised in that the said dispersion (14) comprises a fine dispersion of a polymeric plastics material .
5. A support as claimed in any one of Claims 1 to 3 , further characterised in that the said dispersion (14) comprises a ceramic, a glass, a polymer or a polymeric ceramic material.
6. A support as claimed m Claim 5, further characterised in that the said dispersion (14) having been heat treated comprises alumina or silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU69382/96A AU6938296A (en) | 1995-09-29 | 1996-09-13 | A support for electronic components |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9519888.3A GB9519888D0 (en) | 1995-09-29 | 1995-09-29 | Electrically isolating coating layers |
| GB9519888.3 | 1995-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1997013274A1 true WO1997013274A1 (en) | 1997-04-10 |
Family
ID=10781482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1996/002259 WO1997013274A1 (en) | 1995-09-29 | 1996-09-13 | A support for electronic components |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU6938296A (en) |
| GB (2) | GB9519888D0 (en) |
| WO (1) | WO1997013274A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19752195A1 (en) * | 1997-11-25 | 1999-06-17 | Siemens Ag | Semiconductor component has a two-sided adhesive coated lead-on-chip tape with an aluminum oxide support |
| WO2007140494A1 (en) * | 2006-06-07 | 2007-12-13 | Ab Mikroelektronik Gesellschaft Mit Beschränkter Haftung | Circuit carrier |
| WO2007140495A3 (en) * | 2006-06-07 | 2008-10-09 | Mikroelektronik Ges Mit Beschr | Method for manufacturing a circuit carrier |
| CN102017342A (en) * | 2008-04-02 | 2011-04-13 | 科特克表面调质处理有限责任公司 | Corona roller comprising a cylindrical base body and a dielectric roller cover, and method for producing such a corona roller |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001040544A1 (en) * | 1999-11-30 | 2001-06-07 | Gotek Gmbh | Molded body with an impregnated protective layer |
| DE10052247A1 (en) * | 2000-10-21 | 2002-04-25 | Hella Kg Hueck & Co | Circuit structures on thermally sprayed layers |
| EP1253213A3 (en) * | 2001-04-23 | 2004-04-07 | Sulzer Markets and Technology AG | Manufacturing method to obtain a ceramic coating having electrical or electrochemical properties |
| ITMO20060322A1 (en) * | 2006-10-12 | 2008-04-13 | Maria Prudenziati | INNOVATIVE TECHNIQUE FOR THE IMPROVEMENT OF THE DIELECTRIC AND ANTI-CORROSION CHARACTERISTICS OF FINISHES OBTAINED WITH THERMAL SPRAY, APS, HVOF AND ANALOGUE TECHNOLOGIES, IN PARTICULAR OF INSULATING REPORTS SUCH AS FOR ES. A1203. |
| FR2967289B1 (en) * | 2010-11-10 | 2013-08-23 | Valeo Sys Controle Moteur Sas | ELECTRICAL EQUIPMENT COMPRISING AN ELECTRONIC CIRCUIT AND METHOD OF MANUFACTURING SUCH EQUIPMENT |
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| EP0048992A2 (en) * | 1980-09-30 | 1982-04-07 | Kabushiki Kaisha Toshiba | Printed circuit board and method for fabricating the same |
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| EP0115412A2 (en) * | 1983-01-27 | 1984-08-08 | United Kingdom Atomic Energy Authority | Coating for electronic substrate |
| EP0346038A1 (en) * | 1988-06-09 | 1989-12-13 | Advanced Composite Materials Corporation | Ternary metal matrix composite |
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| US4328285A (en) * | 1980-07-21 | 1982-05-04 | General Electric Company | Method of coating a superalloy substrate, coating compositions, and composites obtained therefrom |
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| DE3631536A1 (en) * | 1986-09-17 | 1988-03-24 | Bayer Ag | Plasma-sprayed ceramic bodies which are impermeable to gas (gastight) and also process for the preparation thereof |
| JPH089765B2 (en) * | 1988-04-15 | 1996-01-31 | 三菱重工業株式会社 | Sealing method for ceramic sprayed material |
| CH692481A5 (en) * | 1988-10-21 | 2002-07-15 | Hort Revetements S A | A method of applying a fluoropolymer layer onto a surface of an object and object coated by the process. |
| JP2647482B2 (en) * | 1989-02-15 | 1997-08-27 | 中部電力株式会社 | Sealing treatment method for ceramic spray coating |
| JP2612983B2 (en) * | 1991-11-06 | 1997-05-21 | 朝日化学工業株式会社 | Roll with corrosion resistance to molten metal |
| GB2269392A (en) * | 1992-08-06 | 1994-02-09 | Monitor Coatings & Eng | Coating of components with final impregnation with chromia or phosphate forming compound |
| DE4303135C2 (en) * | 1993-02-04 | 1997-06-05 | Mtu Muenchen Gmbh | Thermal insulation layer made of ceramic on metal components and process for their production |
| CN1214169C (en) * | 1997-09-03 | 2005-08-10 | 孔比博尔特有限公司 | Draw bolt assemblies |
-
1995
- 1995-09-29 GB GBGB9519888.3A patent/GB9519888D0/en active Pending
-
1996
- 1996-09-13 AU AU69382/96A patent/AU6938296A/en not_active Abandoned
- 1996-09-13 WO PCT/GB1996/002259 patent/WO1997013274A1/en active Application Filing
- 1996-09-13 GB GB9619236A patent/GB2305672A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0048992A2 (en) * | 1980-09-30 | 1982-04-07 | Kabushiki Kaisha Toshiba | Printed circuit board and method for fabricating the same |
| US4340635A (en) * | 1980-12-15 | 1982-07-20 | Coors Porcelain Company | Ceramic substrate for fine-line electrical circuitry |
| EP0115412A2 (en) * | 1983-01-27 | 1984-08-08 | United Kingdom Atomic Energy Authority | Coating for electronic substrate |
| EP0346038A1 (en) * | 1988-06-09 | 1989-12-13 | Advanced Composite Materials Corporation | Ternary metal matrix composite |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19752195A1 (en) * | 1997-11-25 | 1999-06-17 | Siemens Ag | Semiconductor component has a two-sided adhesive coated lead-on-chip tape with an aluminum oxide support |
| WO2007140494A1 (en) * | 2006-06-07 | 2007-12-13 | Ab Mikroelektronik Gesellschaft Mit Beschränkter Haftung | Circuit carrier |
| WO2007140495A3 (en) * | 2006-06-07 | 2008-10-09 | Mikroelektronik Ges Mit Beschr | Method for manufacturing a circuit carrier |
| US8134083B2 (en) | 2006-06-07 | 2012-03-13 | Ab Mikroelektronik Gesselschaft Mit Beschrankter Haftung | Circuit carrier |
| CN102017342A (en) * | 2008-04-02 | 2011-04-13 | 科特克表面调质处理有限责任公司 | Corona roller comprising a cylindrical base body and a dielectric roller cover, and method for producing such a corona roller |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9619236D0 (en) | 1996-10-23 |
| GB9519888D0 (en) | 1995-11-29 |
| GB2305672A (en) | 1997-04-16 |
| AU6938296A (en) | 1997-04-28 |
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